CN101321411B - Cylindrical stack wafer underwater transducer - Google Patents
Cylindrical stack wafer underwater transducer Download PDFInfo
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- CN101321411B CN101321411B CN2008101148956A CN200810114895A CN101321411B CN 101321411 B CN101321411 B CN 101321411B CN 2008101148956 A CN2008101148956 A CN 2008101148956A CN 200810114895 A CN200810114895 A CN 200810114895A CN 101321411 B CN101321411 B CN 101321411B
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Abstract
The invention provides an underwater acoustic transducer, comprising a piezoelectric ceramic wafer pack and metal cover plates on upper and lower ends thereof. The piezoelectric ceramic wafer pack is in a cylindrical shape and stacked by several circular piezoelectric ceramic wafers. Polarization direction of the piezoelectric ceramic wafers is along the thickness direction. 2 to 8 piezoelectric ceramic wafers form a group, and the wafer pack contains one or several groups of wafers, each is separated by a rubber chip. Metal sheets are clamped between adjacent wafers and between a wafer and a rubber chip. Contact conductors are welded on the metal sheets. The piezoelectric ceramic wafer pack and the upper and lower metal cover plates are further separated by the rubber chips. The cylindrical stacked wafer transducer of the invention is not only capable of maintaining characteristics of large transmitting sound energy density of traditional stacked wafer transducer and high sensitivity by reasonably designing diameter of piezoelectric stacked wafers, but capable of adjusting axial directivity open angle of the transducer by changing thickness of the piezoelectric wafer stack or adjusting the group number.
Description
Technical field
The invention belongs to underwater sound Detection Techniques field, be specifically related to a kind of piezoelectric effect emission underwater sound signal of utilizing piezoelectric ceramic and realize the underwater acoustic transducer of hydrospace detection, can be widely used in subsurface communication, detection, target localization, tracking etc., be the vitals that sonar uses.
Background technology
Underwater acoustic transducer is the device that acoustic energy and electric energy are changed mutually, and its status is similar to the antenna in the wireless device, is the Primary Component that transmits and receives sound wave under water.Detection under water, identification, communication, and the exploitation of marine environmental monitoring and marine resources all be unable to do without underwater acoustic transducer.Transducer can be divided into emission type, reception type and transceiver type.Convert the electrical signal to underwater sound signal, and in water the transducer of radiative acoustic wave, be called transmitting transducer, transmitting transducer requires that bigger output acoustic power is arranged and than higher electro-acoustic conversion efficiency.Be used for receiving the underwater acoustic wave signal, the transducer that converts thereof into the signal of telecommunication is a receiving transducer, also often is called hydrophone, and receiving transducer is then required broadband and high sensitivity.Both can convert acoustical signal to the signal of telecommunication, can convert the electrical signal to acoustical signal again, and be used to receive or the transducer of launching acoustical signal is called the transmitting-receiving transducer.
The most widely used transducer in underwater sound field is to adopt piezoelectric effect to carry out the piezoelectric ceramic transducer of power conversion at present, its operation principle is based on the piezoelectric principle of pottery, when the alternating pressure of sound wave affacts on the piezoelectric ceramic, pottery can produce deformation, then produce the alternation electric charge and export alternating voltage on its surface, the size of voltage is directly proportional with acoustic pressure, detects the power that output voltage can be measured sound wave.Receiving transducer is to utilize the direct piezoelectric effect of pottery to receive acoustical signal and be converted to the signal of telecommunication, to survey sound wave; Transmitting transducer then is to utilize the inverse piezoelectric effect of pottery that the electrical signal conversion that applies is become underwater sound signal, with radiative acoustic wave.
Underwater acoustic transducer commonly used at present has several classes such as stack wafer (potsherd) transducer, cylindrical transducer and spherical transducer.The stack wafer transducer utilizes the thickness vibration of stack of wafers, load end face with stack of wafers receives or the radiation acoustical signal, this stack wafer oscillator can less weight and volume obtain big acoustic density, highly sensitive, but the restriction of beam direction angle of release raying face.Cylindrical and spherical transducer utilizes the radial vibration of pipe and spherical shell, receive or radiative acoustic wave with cylinder or sphere, cylindrical transducer has the beam direction of horizontal omnidirectional, spherical transducer has the beam direction of space omnidirectional, but the sensitivity of this class transducer is not as good as the height of stack wafer.Mainly contain following several in the above-mentioned transducer:
(1) compound bar PZT (piezoelectric transducer)
The compound bar PZT (piezoelectric transducer) is also referred to as sandwich PZT (piezoelectric transducer) or tubaeform PZT (piezoelectric transducer) (T.Inoue, T.Nada, T.Tsuchiya, T.Nakanishi, T.Miyama, M.Konno, " Tonpilz piezoelectricers with acousticmatching plates for underwater color image transmission ", IEEE Trans.Ultrason.Ferroelect., Freq.Contr., Vol.40, pp.121-129,1993; Qingshan Yao Bjorno.L. " Broad band tonpilzunderwater acoustic transducers based on multimode optimization IEEE VFFC.Vol 44 5 1997P 1060-1066; Inoue T.Nada.T. " Tonpilz Piezoelectric transducer with acoustic matching platesfor underwater color image IEEE VFFC Vol.40.2,1993P121-130.).It is a kind of high-power stack wafer transmitting transducer commonly used, as receiving higher sensitivity is also arranged.Compound bar PZT (piezoelectric transducer) oscillator structural representation as shown in Figure 1.It by a plurality of identical piezoelectric ceramic annulus mechanically connect, parallel connection stacks gummed and constitutes piezoelectric vibrator on the circuit, when on oscillator, applying alternating voltage, oscillator will produce axial stretching vibration (longitudinal vibration mode), because front shroud 21 is light than back shroud 22, oscillator will promote front shroud 21 vibrations, thus outside radiative acoustic wave.Prestressing force screw 11 is used for fixing front shroud 21, stack of wafers 41 and back shroud 22, applies certain prestressing force simultaneously on stack of wafers, so that between wafer and between oscillator and the front and rear cover plate good transfer of vibration is arranged.Metal joint plate 12 is fixed on oscillator on shell or the support.
Owing to adopt a plurality of wafers to stack, the vibration of oscillator is the superposition of each wafer vibration, thereby can produce bigger energy density, and promptly the sensitivity of this transducer is higher.Again because piezoelectric ceramic longitudinal vibration model frequency is higher, and its emitting head is horn-like, and therefore this transducer operates mainly in high frequency section (tens kHz～hundreds of kHz), and beamwidth (angle of release) of its emission directivity pattern is less.
(2) ring-type transducer (Ring transducer)
Ring-type transducer (S.G.Schock, L.R.Leblanc, S.Panda " spatial and temporal pulse designconsiderations for a marine sediment classification sonar ", IEEE J.Oceanic Eng., Vol.19 PP406-415, July 1994; Y.Qinqshan, L.Bjomo, " Broadband tonpilz underwater acoustic transducersbased on multimode optimization ", IEEE Frans Ulorason., Ferroelect., freq.Contr., Vol.44, P1060-1066,1997.) with the annulus of outside as radiating surface, as shown in Figure 2, by calculating the thickness of determining annulus, can make it can bear the hydrostatic pressing of deep water.Some length oscillators insert in the annulus according to " star " shape.Each length oscillator is made up of piezoelectric ceramic heap 42 and tail quality 23.This transducer is because structural characteristics can be operated in deep water.And there are two main resonance frequencys to use, the one, the resonance frequency of annulus self (the breathing mode of annulus), low slightly vibration frequency; The 2nd, the resonance frequency of each length oscillator (the compressional vibration mode of similar compound bar PZT (piezoelectric transducer)), high slightly vibration frequency.
This transducer considers that compound bar PZT (piezoelectric transducer) and Janus transducer are difficult to realize the shortcoming of low frequencies, and the pottery of therefore using the longitudinal vibration pattern instead drives the vibration that outer shroud is made beam mode, so just can realize low frequencies.But it is exactly that relative swept area is too small that this transducer has a deficiency, the longitudinal vibration energy of ceramic stack is not converted to fully the energy of low frequency flexural vibrations, so radianting capacity is big inadequately.
(3) stave (I type) flextensional transducer
Stave flextensional transducer (Jone D F.Flextensional Barrel-stave Projectors, in Transducers for Sonicand Ultrasonic, MeCollum M D.Hamonic B F.Wilson O.B.eds.Technomic Publishing co.Inc., Lancaster, 1993:150-159.) with the some arcs that curve by the plane (or other curve) bow-shaped section bent beam, be installed to piezoelectric ceramic wafer with screw and pile on the mass at 43 two ends, constitute piezoelectric vibrator.Wherein, a kind of typical structure as shown in Figure 3.By with closed cell foamed plastic pack portion cavity, adopt and freely soak, the ability that works in 500m deep water is arranged.The stave flextensional transducer is converted to the flexural vibrations of stave with the compressional vibration of stack of wafers, and operating frequency is lower.The convex housing when working, the making a concerted effort of the hydrostatic pressing that is applied to it is the tension force along long axis direction in water, this has just offset the compressive pre-stress that partly applies.Along with the increase of the degree of depth, this tension force also direct ratio ground increases, and just can not guarantee the safe stress when height driving work, thereby limit working depth.
Concave surface flextensional transducer (as Fig. 4) is at this problem design.Its advantage is: hydrostatic pressing makes a concerted effort to be the pressure along major axis, along with the degree of depth increases and increases, thereby the assembling prestressing force minimum that need apply; When shell during in the fundamental frequency radial vibration, shell is all done the same-phase vibration, can be more effectively to the far-field radiation acoustical power.
The shortcoming of this transducer is that integral layout becomes slender type, is taking on the same out to out, and on the low side relatively as the quantity of the element piezoelectric ceramic that drives, driving force is with regard to relative deficiency.
(4) cylinder and spherical transducer
Spherical transducer and cylindrical transducer respectively shown in Fig. 5 a and Fig. 5 b, the direction of displacement of d finger pressure electroceramics shell among the figure, the polarised direction of P finger pressure electroceramics shell.This class transducer utilizes the radial vibration of spherical shell or thin-wall circular tube to carry out power conversion, radially receive or radiative acoustic wave, have beam direction preferably, spherical shell structure can obtain the beam direction of space omnidirectional, and the cylindrical tube structure can obtain the beam direction of horizontal omnidirectional.But owing to only receive or the radiation acoustical signal by the vibration of individual layer piezoelectric ceramic shell in this class transducer, obviously its vibrational energy is big far away from the energy that stack wafer produces, i.e. sensitivity is not as the height of stack wafer transducer.This class transducer general work frequency is at a few kHz～100kHz, frequency too high (＞100kHz), transducer diameter is less, technology be difficult to processing and sensitivity lower, frequency too low (＜1kHz), the transducer volume is bigger, required transmitting power is bigger, is easy to puncture and damages.
In sum, the stack wafer transducer is divided into two kinds, a kind of applying piezoelectric ceramic wafer longitudinal vibration mode work, frequency arrives the hundreds of KHz several thousand, another kind of is the flexural vibrations of shell with wafer longitudinal vibration MODAL TRANSFORMATION OF A, greatly reduce the operating frequency of transducer, generally can drop to several conspicuous arrive several KHz, the restrictions of beam direction width (angle of release) the raying face of this class transducer.Cylinder and spherical transducer simple in structure, beam direction width (angle of release) big (level or space omnidirectional), but sensitivity is lower.
Summary of the invention
The objective of the invention is to remedy the little and cylinder of existing stack wafer transducer angle of release, deficiency that spherical transducer sensitivity is low, the underwater acoustic transducer of the big angle of release of a kind of high sensitivity is provided.
Above-mentioned purpose is achieved by the following technical solution:
A kind of underwater acoustic transducer comprises the piezoelectric ceramic wafer heap and the metal cover board at two ends up and down thereof, and the piezoelectric ceramic wafer heap is cylindrical, is stacked by the piezoelectric ceramic wafer of multi-disc circle to form, and the polarised direction of piezoelectric ceramic wafer is along thickness direction; Per 2～8 piezoelectric ceramic wafers are one group, and stack of wafers comprises 1 group or organize wafer more, separates with sheet rubber between every group; Between the adjacent wafer, and accompany sheet metal between wafer and the sheet rubber, welding electrode lead-in wire on the sheet metal; Also separate between piezoelectric ceramic wafer heap and the metal cover board with sheet rubber.
The wafer of above-mentioned piezoelectric chip heap can adopt piezoelectric ceramic PZT to make, and the polarised direction of every group of interior adjacent two wafer is opposite, and the diameter of wafer is generally 10～100mm, and the thickness of every wafer is generally 0.5～5mm.
Above-mentioned metal cover board is made with heavy metal, is loaded on the two ends up and down of piezoelectric ceramic wafer heap, is used for fixing the vibration that its thickness direction is piled and limited to piezoelectric ceramic wafer.Cover plate adopts copper to do usually, and surface size and piezoelectric ceramic wafer are suitable, can or be similar to round polygon for circle, and as regular hexagon, octagon etc., thickness is 2～10mm.
Above-mentioned sheet metal is the disk of making of the metal or alloy that brass or zinc platinoid etc. is easy to weld, and its diameter is identical with wafer, and thickness is 0.1～0.2mm.
Above-mentioned sheet rubber also is the diameter disk identical with wafer, and thickness is 1～2mm.
General, between sheet metal and the piezoelectric ceramic wafer, between sheet metal and the sheet rubber and all glue together between sheet rubber and the metal cover board with epoxy resin.Further, above-mentioned wafer, sheet metal, sheet rubber and metal cover board can be at center drillings, and like this, piezoelectric chip heap, sheet rubber, metal cover board can be by running through screw wherein up and down.
Further, the output that a base is used for piezoelectric chip heap contact conductor is installed in the bottom of following metal cover board.Base can be the center cylinder with holes that adopts metallic aluminium to make, and the surface is along the diametric(al) fluting thereon, and the contact conductor of both sides is drawn from centre bore by fluting, is connected to cable.Base binds by epoxy resin and following metal cover board.
After assembling, cylindrical stack wafer transducer of the present invention needs its embedding in the water-proof sound-transmitting layer.The water-proof sound-transmitting layer material of underwater acoustic transducer is generally the polyurethane sound transmitting rubber, this material has dielectric strength height, volume resistance height, anti-open and anti-shear strength height, resistance to wear is good and characteristic such as damping height, and polyurethane ethanol-tolerant, anti-ester family solvent nature preferably in addition.As its name suggests, the main effect of water-proof sound-transmitting layer is waterproof, entrant sound, avoids transducer inner owing to water inlet, short circuit cause device failure.Simultaneously, the characteristic impedance of polyurethane and water coupling, acoustic attenuation coefficient is very low, guarantees good acoustic energy transmission between transducer and the aqueous medium.
Underwater acoustic transducer of the present invention is the cylindrical stack wafer transducer, when adding alternating voltage on stack of wafers, because the piezoelectric effect of pottery, each wafer produces vibration along radial direction, a plurality of stack wafer radial vibrations promptly form the cylindrical acoustic radiating surface, to around radiative acoustic wave.Because the piezoelectric chip heap adopts the multi-disc pottery to stack, the vibration of oscillator is the superposition of a plurality of wafer radial vibrations, can produce big energy density, and then improves the sensitivity of transducer.The horizontal directivity of cylindrical stack wafer transducer oscillator cylindricality radiating surface is an omnidirectional, and axially directional wave beam width (angle of release) can be adjusted by the group number of regulating the piezoelectric ceramic wafer heap.
In a word, cylindrical stack wafer transducer of the present invention is by the diameter of appropriate design piezoelectric stack wafer, both keep big, the highly sensitive characteristics of traditional stack wafer transducer emission acoustic density, thereby remedied existing cylinder and the less deficiency of spherical PZT (piezoelectric transducer) sensitivity.In addition, can also adjust the axial directive property angle of release of transducer by changing the thickness or the adjustment group number of piezoelectric chip heap.
Description of drawings
Fig. 1 is the structural representation of compound bar PZT (piezoelectric transducer) oscillator.
Fig. 2 is the structural representation of ring-type transducer.
Fig. 3 is the structural representation of convex stave flextensional transducer.
Fig. 4 is the structural representation of matrix stave flextensional transducer.
Fig. 5 a is spherical transducer schematic diagram; Fig. 5 b is cylinder and spherical transducer schematic diagram.
Fig. 6 is the structural representation of cylindrical stack wafer transducer of the present invention.
Fig. 7 is the structure and the line schematic diagram of cylindrical stack wafer transducer piezoelectric chip heap of the present invention.
Embodiment
Below in conjunction with accompanying drawing and example cylindrical stack wafer transducer of the present invention is elaborated.
As shown in Figure 6, the cylindrical stack wafer transducer of this example comprises the piezoelectric chip heap be made up of piezoelectric ceramic wafer 4, metal cover board 2, prestressing force screw 1, sheet rubber 3, base 6, water-proof sound-transmitting layer 9 and output cable 8 etc. up and down.In the piezoelectric chip heap, piezoelectric ceramic wafer 4 adopts circular center piezoelectric ceramic PZT with holes to make, and the wafer external diameter is 23mm, and internal diameter is 5mm, and every thickness is 1mm.Per four wafer are one group of piezoelectric chip group, the polarised direction of adjacent chip opposite (referring to Fig. 7).The piezoelectric chip heap is made up of 2 groups of piezoelectric chips, and the sheet rubber 3 by annular between the piezoelectric chip group separates, and to eliminate coupling therebetween, piezoelectric chip is piled and also separated by sheet rubber 3 between the metal cover board 2 up and down.External diameter is identical with wafer 4 in the sheet rubber 3, and thickness is 1～2mm.The shape of metal cover board is made of copper with wafer 4 up and down, loam cake thickness of slab 3mm, lower cover thickness of slab 5mm.Folder is with sheet metal 5, with welding lead 7 between the piezoelectric chip 4.The interior external diameter of sheet metal 5 is also identical with wafer 4, and thickness is 0.2mm.。Base 6 is connected as a single entity by two concentric circles annulated columns up and down, and last annulus post overall diameter is identical with piezoelectric chip, and thickness is 3mm, and its upper surface has a stria along diameter, and following annulus post external diameter is 5～10mm, and thickness is 8mm, and the base internal diameter is 3～5mm.
During the assembling transducer, earlier with epoxy resin that piezoelectric chip 4 is bonding with sheet metal 5 piecewise, bonding mutually again, per four is one group of piezoelectric chip group, totally 2 groups, and paste sheet rubber 3 with epoxy resin between the piezoelectric chip group and isolate, form the piezoelectric chip heap.Also pasting sheet rubber 3 with epoxy resin between piezoelectric chip heap and the metal cover board 2 isolates.Then metal cover board 2, piezoelectric chip heap and sheet rubber 3 are connected with prestressing force screw 1.The wiring of piezoelectric chip heap as shown in Figure 7, employing is connected in parallel, and guaranteeing applying in-phase voltage simultaneously on each wafer, and produces synchronous radial vibration.Lead-in wire 7 is by the slice groove of base 6 upper surfaces, endoporus output from base 6, be connected to cable, wherein utmost point lead-in wire (the left side lead-in wire among Fig. 7) connects with the earth polar of output cable 8, and another utmost point lead-in wire (the right side lead-in wire among Fig. 8) is connected with the heart yearn of output cable 8.With epoxy resin that base 6 and following metal cover board 2 is bonding.At last above-mentioned assembly parts are put into the mould of customization, the pouring polyurethane rubber constitutes water-proof sound-transmitting layer 9, finally finishes the making of transducer.
More than cylindrical stack wafer transducer of the present invention and its implementation of describing by embodiment; be not to be used to limit the present invention; any those skilled in the art; in not breaking away from spirit of the present invention and essential scope; can do various changes and retouching, so protection scope of the present invention is looked claims and is defined.
Claims (9)
1. underwater acoustic transducer comprises the piezoelectric ceramic wafer heap and the metal cover board at two ends up and down thereof, and the piezoelectric ceramic wafer heap is cylindrical, is stacked by the piezoelectric ceramic wafer of multi-disc circle to form, and the polarised direction of piezoelectric ceramic wafer is along thickness direction; Per 2～8 piezoelectric ceramic wafers are one group, and stack of wafers comprises 1 group or organize wafer more, separates with sheet rubber between every group; Between the adjacent wafer, and accompany sheet metal between wafer and the sheet rubber, welding electrode lead-in wire on the sheet metal; Piezoelectric ceramic wafer is piled and is also separated with sheet rubber between the metal cover board up and down; Described sheet rubber is the diameter disk identical with wafer; Described metal cover board is made with heavy metal; Described piezoelectric ceramic wafer, sheet metal, sheet rubber and metal cover board all have the hole at the center, by the screw that runs through wherein they are fixed.
2. underwater acoustic transducer as claimed in claim 1 is characterized in that: described piezoelectric ceramic wafer adopts piezoelectric ceramic PZT to make, and the polarised direction of every group of interior adjacent two wafer is opposite, and the diameter of wafer is 10～100mm, and the thickness of every wafer is 0.5～5mm.
3. underwater acoustic transducer as claimed in claim 1 is characterized in that: described metal cover board thickness is 2～10mm.
4. underwater acoustic transducer as claimed in claim 3 is characterized in that: described metal cover board is made of copper.
5. underwater acoustic transducer as claimed in claim 1 is characterized in that: described sheet metal is made of the metal or alloy that is easy to weld, and thickness is 0.1～0.2mm.
6. underwater acoustic transducer as claimed in claim 1 is characterized in that: described sheet rubber thickness is 1～2mm.
7. underwater acoustic transducer as claimed in claim 1 is characterized in that: between sheet metal and the piezoelectric ceramic wafer, between sheet metal and the sheet rubber and all glue together with epoxy resin between sheet rubber and the metal cover board.
8. underwater acoustic transducer as claimed in claim 1 is characterized in that: be equipped with one in the bottom of following metal cover board and be used for the base that output electrode goes between.
9. underwater acoustic transducer as claimed in claim 8 is characterized in that: the center with holes cylinder of described base for adopting metallic aluminium to make, and the surface is along the diametric(al) fluting thereon, and the contact conductor of both sides is drawn from centre bore by fluting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2008101148956A CN101321411B (en) | 2008-06-13 | 2008-06-13 | Cylindrical stack wafer underwater transducer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008101148956A CN101321411B (en) | 2008-06-13 | 2008-06-13 | Cylindrical stack wafer underwater transducer |
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| CN101321411A CN101321411A (en) | 2008-12-10 |
| CN101321411B true CN101321411B (en) | 2011-12-14 |
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| CN107580274A (en) * | 2017-07-20 | 2018-01-12 | 哈尔滨工程大学 | Mosaic bends disk underwater acoustic transducer |
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