CN101315927B - 一种大功率led相变热沉结构 - Google Patents

一种大功率led相变热沉结构 Download PDF

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CN101315927B
CN101315927B CN2008100295708A CN200810029570A CN101315927B CN 101315927 B CN101315927 B CN 101315927B CN 2008100295708 A CN2008100295708 A CN 2008100295708A CN 200810029570 A CN200810029570 A CN 200810029570A CN 101315927 B CN101315927 B CN 101315927B
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heat sink
power led
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CN101315927A (zh
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汤勇
向建化
陆龙生
胡志华
周伟
白鹏飞
陈创新
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South China University of Technology SCUT
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01ELECTRIC ELEMENTS
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Abstract

本发明公开了一种大功率LED相变热沉结构,该结构热沉本体为带有空腔的圆形或方形结构,空腔内有沸腾结构和低温沸腾传热工质,密封端盖置于热沉本体上端,与热沉本体紧密相连,形成密闭空腔,密封端盖内表面为冷凝结构,空腔密封成真空状态;至少一片大功率LED芯片固定在热沉本体外侧下端,电极位于相变热沉外侧,相变热沉、电极和透镜通过封装树脂连接,大功率LED芯片与电极直接通过金丝连接。本发明利用工质液气相变实现热沉本体的热等温效应以减少热沉上下端的温差,把大功率LED芯片产生的热量有效的导出,实现了大功率LED与高效散热器件的集成,具有重量轻、功率大、结构简单、散热效率高、寿命长、不消耗额外能源等优点。

Description

一种大功率LED相变热沉结构
技术领域
本发明涉及一种大功率LED设备,特别是涉及一种能有效的散发大功率LED工作中所产生热量的大功率LED相变热沉结构。
背景技术
与白炽灯和荧光灯相比,LED以其体积小,全固态,长寿命,环保,省电等一系列优点,已广泛用于汽车照明、装饰照明、手机闪光灯、大中尺寸,即NB和LCD-TV等显示屏光源模块中,已经成为21世纪最具发展前景的高技术领域之一。
LED是个光电器件,其工作过程中只有15%-25%的电能转换城光能,其余的电能几乎都转换成热能,使LED的温度升高;对于单个LED而言,如果热量集中在尺寸很小的芯片内而不能有效散出,则会导致芯片的温度升高,引起热应力的非均匀分布、芯片发光效率和荧光粉激射效率下降。研究表明,当温度超过一定值时,器件的失效率将呈指数规律攀升,元件温度每上升2℃,可靠性将下降10%。在室温附近,温度每升高1℃,LED的发光强度会相应减少1%左右,当器件从环境温度上升到120℃时,亮度下降多达35%。当多个LED密集排列组成白光照明***时,热量的耗散问题更严重。因此解决散热问题已成为功率型LED应用的先决条件。
发明内容
本发明的目的就在于解决大功率LED的封装散热难题,提出一种大功率LED相变热沉结构。所设计的大功率LED相变热沉结构能利用工质液气相变来实现热沉本体的热等温效应以减少热沉上下端的温差,从而把大功率LED芯片产生的热量有效的导出,并实现了大功率LED与散热封装结构的一体化封装,适合于大批量生产。
本发明的目的及解决其主要技术问题通过如下技术方案实现:
一种大功率LED相变热沉结构,包括密封端盖、热沉本体、大功率LED芯片、金丝、电极和封装树脂;热沉本体为带有空腔的圆形或方形结构,空腔内有沸腾结构和低温沸腾传热工质,密封端盖置于热沉本体上端,通过焊接或胶结与热沉本体紧密相连,形成密闭空腔,密封端盖内表面为多孔结构;空腔密封成真空状态;沸腾结构为多孔结构或沟槽结构,位于空腔下端;至少一片大功率LED芯片固定在热沉本体外侧下端,电极位于相变热沉外侧,相变热沉和电极通过封装树脂连接在一起,大功率LED芯片与电极直接通过金丝连接形成通路。
为进一步实现本发明目的,所述的密封端盖为圆形结构,置于相变热沉上端。
所述的密封端盖为圆形结构,置于相变热沉内。
所述的密封端盖为方形结构,置于相变热沉内。
所述的沸腾结构采用铜粉烧结制成是指先把铜粉放入密封端盖和热沉本体组成的空腔内,预留10%以上的空腔体积,再进行烧结,烧结后密封。
所述的低温沸腾传热工质为纯水、乙醇或丙酮。
所述的大功率LED芯片为多片,多片大功率LED芯片之间并联或串联连接。
本发明与现有技术相比较,具有明显的优点和有益效果:
(1)本发明中采用的大功率LED相变热沉结构工质液气相变来实现热沉本体的热等温效应以减少热沉上下端的温差,能有效将LED工作产生的热量转移到外界环境中去,大大提高了LED封装的散热能力;
(2)本发明所述相变热沉的沸腾结构与微沟槽结构能增加沸腾面积,增强导热效果;
(3)本发明所述相变热沉结构与密封端盖根据不同要求,可设计成多种诸如方形、圆形等不同形式的结构和尺寸,以便于设计各种不同的LED散热方案;
(4)本发明可以根据所设计相变热沉结构尺寸焊接或者固定不同数量和不同排列形式诸如方形、圆形等形式的大功率LED芯片,具有可调性,扩大了此结构的应用范围;
(5)本发明所述结构制作、封装工序简单,且采用封装树脂进行一体化封装,易实现产业化;
(6)本发明所述结构可以继续附加其他***散热装置,进行多级散热。
附图说明
图1为本发明的大功率LED相变热沉结构示意图;
图2为本发明实施方案1密封端盖与相变热沉的结构示意图;
图3为本发明实施方案2密封端盖与相变热沉的结构示意图;
图4为本发明实施方案3密封端盖与相变热沉的结构示意图;
图5a为本发明中所述大功率LED芯片方形布局形式;
图5b为本发明中所述大功率LED芯片圆形布局形式。
具体实施方式
下面结合附图和实施方案对本发明作进一步详细的说明,但本发明的实施方式不限于此。
实施例1
如图1、2所示,所述的一种大功率LED的相变热沉及封装结构包括密封端盖1、热沉本体2、大功率LED芯片3、金丝4、沸腾结构5、工质6、电极7和透镜9,密封端盖和热沉本体为带有空腔的圆形结构,通过焊接或胶结紧密相连,形成密闭空腔,空腔密封成真空状态,其空腔内具有沸腾结构5和低温沸腾传热工质6;密封端盖1与LED安装铝基板间可通过螺钉连接在一起;热沉本体2下端外侧与密封端盖1外侧都为平面结构。沸腾结构5采用铜粉烧结形式,先把铜粉放入密封端盖1和热沉本体2空腔,预留10%的空腔体积,放好后再进行烧结,烧结后密封;低温沸腾传热工质6为纯水。如图5a所示,大功率LED芯片3为多片,成正方形排列,多片大功率LED芯片3之间以并联或串联的方式通过焊接或其他方式固定在热沉本体2小端。大功率LED芯片3与电极7直接通过金丝4焊接在一起;电极7位于热沉本体1外侧,热沉本体1、电极7和透镜9通过封装树脂8连接。透镜9为透明材料制成,起保护LED作用。低温沸腾传热工质6为纯水;大功率LED芯片3工作产生的热量由热沉本体2小端(即下端)的沸腾结构5和低温沸腾传热工质6通过工质液气相变传热方式传导出去。其工作原理是:LED芯片产生的热量通过热沉本体下端传导到空腔中的沸腾结构5,空腔里的低温沸腾传热工质6受热汽化把热量传给密封端盖,密封端盖再和其它热沉连接进行散热,密封端盖内表面为多孔结构,用于冷却汽化工质成液态,液态工质通过多孔结构的毛吸力作用重新回到热沉本体,从而形成循环状态。
实施例2
如图3所示,一种大功率LED的相变热沉及封装结构的密封端盖1采用圆形结构,置于热沉本体2内,与热沉本体2通过焊接或胶结连接方式连接在一起,而热沉本体2与LED安装铝基板间可通过螺钉连接在一起;热沉本体2下端采用圆形结构,沸腾结构5采用多孔材料烧结制成,多孔材料为商用泡沫铜或泡沫铝,其烧结方法与铜粉烧结一样。低温沸腾传热工质6为丙酮。如图5b所示,大功率LED芯片3成圆形排列,以并联或串联的方式通过焊接固定在热沉本体2下端。其它同实施例1。
实施例3
如图4所示,一种大功率LED的相变热沉及封装结构的密封端盖1采用方形结构,置于热沉本体2内,与热沉本体2通过焊接或胶结连接方式连接在一起,而热沉本体2与LED安装铝基板间可通过螺钉连接在一起;热沉本体2下端采用方形结构,沸腾结构为方形沟槽形式,在空腔下端用普通机床加工沟槽。大功率LED芯片3为一片,通过焊接固定在热沉本体2下端,低温沸腾传热工质6为乙醇;其它同实施例1。
以上所述,仅是本发明的较佳实施方案而已,并非对本发明做任何形式的限制,任何熟悉本专业的方法人员可能利用上述揭示的技术内容加以变更或修饰为等同变化的等效实施方案,但是凡是未脱离本发明的技术方案内容,依据本发明的技术实质对以上实施方案所作的任何简单修改,等同变化与修饰,均仍属于本发明技术方案的范围内。

Claims (10)

1.一种大功率LED相变热沉结构,其特征在于:包括密封端盖、热沉本体、大功率LED芯片、金丝、电极和封装树脂;热沉本体为带有空腔的圆形或方形结构,空腔内有沸腾结构和低温沸腾传热工质,密封端盖置于热沉本体上端,通过焊接或胶结与热沉本体紧密相连,形成密闭空腔,密封端盖内表面为多孔结构;空腔密封成真空状态;沸腾结构为多孔结构或沟槽结构,位于空腔下端;至少一片大功率LED芯片固定在热沉本体外侧下端,电极位于相变热沉外侧,相变热沉和电极通过封装树脂连接在一起,大功率LED芯片与电极直接通过金丝连接形成通路。
2.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述的密封端盖为圆形结构,置于相变热沉上端。
3.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述的密封端盖为圆形结构,置于相变热沉内。
4.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述的密封端盖为方形结构,置于相变热沉内。
5.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述的沸腾结构采用铜粉烧结制成是指先把铜粉放入密封端盖和热沉本体组成的空腔内,预留10%以上的空腔体积,再进行烧结,烧结后密封。
6.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述的低温沸腾传热工质为纯水、乙醇或丙酮。
7.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述的大功率LED芯片为单片或多片,多片大功率LED芯片之间并联或串联连接。
8.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述沸腾结构采用铜粉烧结制成。
9.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述沸腾结构采用多孔材料烧结制成,多孔材料为泡沫铜或泡沫铝。
10.根据权利要求1所述的大功率LED相变热沉结构,其特征在于:所述沟槽结构为机械加工的沟槽结构。
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