CN101308890A - Light emitting diode element and manufacture method thereof - Google Patents
Light emitting diode element and manufacture method thereof Download PDFInfo
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- CN101308890A CN101308890A CNA2007101039808A CN200710103980A CN101308890A CN 101308890 A CN101308890 A CN 101308890A CN A2007101039808 A CNA2007101039808 A CN A2007101039808A CN 200710103980 A CN200710103980 A CN 200710103980A CN 101308890 A CN101308890 A CN 101308890A
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Abstract
Disclosed is a light-emitting diode which comprises a microlens baseplate, a reflecting layer, a cushioning layer, a first electric semiconductor layer, a source bed, a second electric semiconductor layer, a first electrode and a second electrode. A plurality of microlenses are arranged on the upper surface of the microlens baseplate; the cushioning layer is arranged on the upper surface of the microlens baseplate, and the first electric semiconductor layer is arranged on the cushioning layer; the source bed is partially arranged on the first electric semiconductor layer; the second electric semiconductor layer is arranged on the source bed; the first electrode is arranged on the other part of the source bed, which is uncovered by the first electric semiconductor layer; the second electrode is arranged on the second electric semiconductor layer; the reflecting layer is arranged on the lower surface of the microlens baseplate.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof, and be particularly related to a kind of light-emitting diode and manufacture method thereof with lenticule base plate.
Background technology
Light-emitting diode (Light Emitting Diode; LED) have low power consumption, lower calorific value, operation lifetime length, impact resistance, volume is little, reaction speed is fast and the good light electrical characteristics such as coloured light that can send wavelength stabilization, therefore often is applied to the indicator light of household electrical appliances, instrument and the application of photovoltaic.Along with the progress of photoelectricity science and technology, solid-state light emitting element is promoting the existing significant progress in aspects such as luminous efficiency, useful life and brightness, will become the main flow of following light-emitting component in the near future.
Yet the light that known light-emitting diode active layer is emitted, when arriving at the interface of light-emitting diode and surrounding environment, can produce total reflection greater than the critical angle of interface because of the incident angle of light, the surface that light can't the self-luminous diode is penetrated toward extraneous environment, caused the light extraction efficiency of light-emitting diode on the low side.
In order to solve this problem, the mode that known technology attaches with etching, evaporation or adhesion, on epitaxial structure of light-emitting diode, form three-dimensional transparent geometrical pattern, come the incident angle of augmentation light by the scattering of transparent geometrical pattern, to improve the light extraction efficiency of light-emitting diode.
Yet, known etching, evaporation or sticking method be easy damaged epitaxial structure of light-emitting diode surface all, therefore having to provide a kind of manufacture method that can improve light extraction efficiency under the prerequisite that can not damage epitaxial structure of light-emitting diode, to form a kind of light-emitting diode with high light extraction efficiency.
Summary of the invention
One embodiment of the invention provide a kind of light-emitting diode with high light extraction efficiency, comprising: lenticule base plate, reflector, resilient coating, the first electrical semiconductor layer, active layer, the second electrical semiconductor layer, first electrode and second electrode.The upper surface of lenticule base plate has a plurality of lenticules.Resilient coating is positioned on the upper surface of lenticule base plate.The first electrical semiconductor layer is positioned on the resilient coating.Active layer is positioned on the first electrical semiconductor layer of a part.The second electrical semiconductor layer is positioned on the active layer.First electrode is positioned at the first electrical semiconductor layer and does not cover on another part of active layer.Second electrode is positioned on the second electrical semiconductor layer.The reflector is positioned on the lower surface of lenticule base plate.
Another embodiment of the present invention provides a kind of light-emitting diode with high light extraction efficiency, comprising: lenticule base plate, reflector, resilient coating, the first electrical semiconductor layer, active layer, the second electrical semiconductor layer, first electrode and second electrode.The lower surface of lenticule base plate has a plurality of lenticules.Resilient coating is positioned on the upper surface of lenticule base plate.The first electrical semiconductor layer is positioned on the resilient coating.Active layer is positioned on the first electrical semiconductor layer of a part.The second electrical semiconductor layer is positioned on the active layer.First electrode is positioned at the first electrical semiconductor layer and does not cover on another part of active layer.Second electrode is positioned on the second electrical semiconductor layer.The reflector is positioned on the lower surface of lenticule base plate.
Another embodiment of the present invention provides a kind of manufacture method of light-emitting diode, can under the prerequisite that can not damage epitaxial structure of light-emitting diode, improve light extraction efficiency, this manufacture method comprises the steps: at first to provide lenticule base plate at least, and wherein the upper surface of lenticule base plate has a plurality of lenticules.Then above the upper surface of lenticule base plate, form resilient coating; On resilient coating, form the first electrical semiconductor layer; On the first electrical semiconductor layer, form active layer; On active layer, form the second electrical semiconductor layer.Remove a part second electrical semiconductor layer and a part of active layer then, make outside a part of first electrical semiconductor layer is exposed to.Form first electrode again on the part outside the first electrical semiconductor layer is exposed to.Then on the second electrical semiconductor layer, form second electrode.And then on the lower surface of lenticule base plate, form the reflector.
An embodiment more of the present invention provides a kind of manufacture method of light-emitting diode, can improve light extraction efficiency under the prerequisite that can not damage epitaxial structure of light-emitting diode, and this manufacture method comprises the steps: at least
One lenticule base plate at first is provided, and wherein the lower surface at lenticule base plate has a plurality of lenticules.Then above the upper surface of lenticule base plate, form resilient coating; On resilient coating, form the first electrical semiconductor layer; On the first electrical semiconductor layer, form active layer; On active layer, form the second electrical semiconductor layer.Remove a part second electrical semiconductor layer and a part of active layer then, make outside a part of first electrical semiconductor layer is exposed to.Form first electrode again on the part outside the first electrical semiconductor layer is exposed to.Then on the second electrical semiconductor layer, form second electrode.And then on the lower surface of lenticule base plate, form the reflector.
According to the foregoing description, the preferred embodiments of the present invention provide a kind of and have a plurality of lenticular transparency carriers, and above substrate the growing epitaxial structure, and below transparency carrier, form the reflector.Via after reflector and lenticular reflection and the scattering, can change the incident angle of light by the light that active layer throwed of epitaxial structure, and then increase the light extraction efficiency of light-emitting diode.
Therefore the light-emitting diode that the foregoing description provided not only has high light extraction efficiency, and can not damage the epitaxial structure of optical diode in technology, more can improve the process yield of light-emitting diode, reaches above-mentioned goal of the invention.
Description of drawings
According to above-described preferred embodiment, and cooperate appended illustrating, the reader is when more deep understanding being arranged to purpose of the present invention, feature and advantage.But it should be noted that for for the purpose of clear the description, the appended diagram of this specification not proportionally chi illustrated.
Diagram is simply described as follows:
Figure 1A to 1D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 100 that first preferred embodiment of the invention illustrated.
Fig. 2 A to 2D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 200 that second preferred embodiment of the invention illustrated.
Fig. 3 A to 3D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 300 that third preferred embodiment of the invention illustrated.
Fig. 4 A to 4D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 400 that four preferred embodiment of the invention illustrated.
Description of reference numerals
100: light-emitting diode 101: transparency carrier
103: upper surface of base plate 105: base lower surface
107: depressed part 110: geometrical pattern
111: lenticule base plate 113: resilient coating
115:n type semiconductor layer 117: active layer
119:p type semiconductor layer 121: epitaxial structure
Electrode 125 in 123: the first: transparency conducting layer
Electrode 129 in 127: the second: the reflector
131: light 200: light-emitting diode
201: transparency carrier 203: upper surface of base plate
205: base lower surface 207: the printing opacity diaphragm
209: protruding grain 210: geometrical pattern
211: lenticule base plate 213: resilient coating
215:n type semiconductor layer 217: active layer
219:p type semiconductor layer 221: epitaxial structure
Electrode 225 in 223: the first: transparency conducting layer
Electrode 229 in 227: the second: the reflector
231: light 300: light-emitting diode
301: transparency carrier 303: upper surface of base plate
305: base lower surface 307: depressed part
310: geometrical pattern 311: lenticule base plate
313: resilient coating 315:n type semiconductor layer
317: active layer 319:p type semiconductor layer
321: 323: the first electrodes of epitaxial structure
325: 327: the second electrodes of transparency conducting layer
329: reflector 331: light
400: light-emitting diode 401: transparency carrier
403: upper surface of base plate 405: base lower surface
407: printing opacity diaphragm 409: protruding grain
410: geometrical pattern 411: lenticule base plate
413: resilient coating 415:n type semiconductor layer
417: active layer 419:p type semiconductor layer
421: 423: the first electrodes of epitaxial structure
425: 427: the second electrodes of transparency conducting layer
429: reflector 431: light
Embodiment
The invention provides a kind of high-brightness LED component and preparation method thereof, can under the prerequisite of not damaging epitaxial structure of light-emitting diode, reach the effect that improves light extraction efficiency.For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, details are as follows as preferred embodiment especially exemplified by a kind of III group-III nitride light-emitting diode.So it should be noted that, following embodiment is only in order to illustrating technical characterictic of the present invention, but not in order to limit the present invention, any retouching and change of being done based on technical spirit of the present invention, the for example replacement of the modification of structure or material does not all break away from the scope of claim of the present invention.
Please refer to Figure 1A to 1D, Figure 1A to 1D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 100 that first preferred embodiment of the invention illustrated.
At first please refer to Figure 1A, transparency carrier 101 is provided, wherein transparency carrier 101 has upper surface 103 and with respect to the lower surface 105 of upper surface 103.Then, carry out etch process etching upper surface 103, on upper surface 103, form a plurality of depressed parts 107 thus.In a preferred embodiment of the invention, upper surface 103 part that etched technology did not remove, present a plurality of protuberances 109 with printing opacity and scattered beam function, its shape for example is semicircle sphere, pyramid, trapezoidal, arc, pyramid or difform combination.And these protuberances 109 can be continuous distribution or discontinuously arranged arrangement, are combined into a geometrical pattern 110 at upper surface 103 thus.Each protuberance 109 can be considered a kind of lenticule with light scattering function, therefore by above-mentioned steps, can obtain a kind of lenticule base plate 111 with surface of geometrical pattern 110.In present embodiment, geometrical pattern 110 is formed (being illustrated as Figure 1B) by a plurality of pyramid protuberances 109 of periodically arranging continuously and having a platform that are.
Then please refer to Fig. 1 C, can utilize for example depositional mode earlier, above the upper surface 103 of lenticule base plate 111, form resilient coating 113.In the preferred embodiments of the present invention, resilient coating 113 is formed by aluminium nitride (AlN) or gallium nitride (GaN).Wherein resilient coating 113 is covered on the lenticule base plate 111, and with geometrical pattern 110 conformal (Conform).
Then, utilize for example Metalorganic chemical vapor deposition technology, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds n type admixture, silicon (Si) etc. for example, epitaxial growth n type (first is electrical) semiconductor layer 115 on resilient coating 113.Wherein, the material of n type semiconductor layer 115 preferably can for example be n type aluminum indium nitride gallium or n type gallium nitride.Epitaxial growth active layer 117 on n type semiconductor layer 115, wherein active layer 117 can for example be multiple quantum trap (MQW) structure of being made up of aluminum indium nitride gallium (A1GaInN) and gallium nitride preferably.
After treating that active layer 117 forms, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds p type admixture, magnesium (Mg) etc. for example, growing p-type on active layer 117 (second is electrical) semiconductor layer 119.So far finish epitaxial growth steps, on lenticule base plate 111, formed epitaxial structure 121.
Utilize transformation coupling formula plasma (Transformer Coupled Plasma then; TCP) carry out etch process,, make outside the n type semiconductor layer 115 of a part is exposed to the p type semiconductor layer 119 that removes a part and the active layer 117 of a part.Form first electrode 123 again on the part outside n type semiconductor layer 115 is exposed to.In a preferred embodiment of the invention, the material of first electrode 123 is selected from by indium (In), aluminium (Al), titanium (Ti), gold (Au), tungsten (W), indium tin (InSn), titanium nitride (TiN), silicon tungsten (WSi), platinum indium (PtIn
2), rubidium/aluminium (Nd/Al), nickel/silicon (Ni/Si), palladium/aluminium (Pd/Al), tantalum/aluminium (Ta/Al), titanium/silver (Ti/Ag), tantalum/silver (Ta/Ag), titanium/aluminium (Ti/Al), titanium/gold (Ti/Au), titanium/titanium nitride (Ti/TiN), zirconium/zirconium nitride (Zr/ZrN), gold/germanium/nickel (Au/Ge/Ni), chromium/nickel/gold (Cr/Au/Ni), nickel/chromium/gold (Ni/Cr/Au), titanium/palladium/gold (Ti/Pd/Au), titanium/platinum/gold (Ti/Pt/Au), titanium/aluminium/nickel/gold (Ti/Al/Ni/Au), the group that gold/silicon/titanium/gold/silicon (Au/Si/Ti/Au/Si) and gold/nickel/titanium/silicon/titanium (Au/Ni/Ti/Si/Ti) are formed.
Then, on p type semiconductor layer 119, form transparency conducting layer 125, on transparency conducting layer 125, form second electrode 127 again.In a preferred embodiment of the invention, the material of transparency conducting layer 125 can be the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper or above-mentioned material.The material of second electrode 127 then is selected from by nickel/gold (Au/Ni), nickel oxide/gold (NiO/Au), palladium/silver/gold/titanium/gold (Pd/Ag/Au/Ti/Au), platinum/rubidium (Pt/Ru), titanium/platinum/gold (Ti/Pt/Au), palladium/nickel (Pd/Ni), nickel/palladium/gold (Ni/Pd/Au), platinum/nickel/gold (Pt/Ni/Au), rubidium/gold (Ru/Au), niobium/gold (Nb/Au), cobalt/gold (Co/Au), platinum/nickel/gold (Pt/Ni/Au), nickel/platinum (Ni/Pt), nickel indium (Ni/In) and platinum indium (Pt
3In
7) group formed.
Afterwards, on the lower surface 105 of lenticule base plate 111, form reflector 129 again, to form light-emitting diode 100.In the preferred embodiments of the present invention, reflector 129 can be Bragg reflecting layer (the Distributed Bragg Reflector that the multilevel oxide film is formed; DBR), 1-D photon crystal film or metal material.Wherein metal material is selected from the group of being made up of aluminium (Al), gold (Au), platinum (Pt), zinc (Pb), silver (Ag), nickel (Ni), germanium (Ge), indium (In), tin (Sn) and alloy thereof.
Please refer to Fig. 2 A to 2D, Fig. 2 A to 2D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 200 that second preferred embodiment of the invention illustrated.
At first please refer to Fig. 2 A, transparency carrier 201 is provided, wherein transparency carrier 201 has upper surface 203 and with respect to the lower surface 205 of upper surface 203.Then, carry out evaporation or barbola work, on upper surface 203, form a plurality of protruding grains 209 with printing opacity and scattered beam function.In a preferred embodiment of the invention, protruding grain 209 is by the protruding grain of evaporation process formed insulation on upper surface 203, and material is silica, silicon dioxide or silicon nitride.But among other embodiment of the present invention, protruding grain 209 is fixedly arranged on the printing opacity diaphragm 207, is pasted on upper surface 203 by barbola work again.The profile of protruding grain 209 comprises for example semicircle sphere, pyramid or pyramid, and these protuberances 209 can continuous distribution or discontinuously arranged, combines geometrical pattern 210 at upper surface 203 thus.Each protruding grain 209 can be considered a kind of lenticule with light scattering function, therefore by above-mentioned steps, can obtain the lenticule base plate 211 that a kind of surface has geometrical pattern 210.In the present embodiment, geometrical pattern 210 is formed (being illustrated as Fig. 2 B) by a plurality of 209 of continuously arranged semicircle spherical male grains of one-tenth periodicity.
Then please refer to Fig. 2 C, can utilize for example depositional mode earlier, above the upper surface 203 of lenticule base plate 211, form resilient coating 213.In the preferred embodiments of the present invention, resilient coating 213 is formed by aluminium nitride (AlN) or gallium nitride (GaN).Wherein resilient coating 213 covers and is positioned on the lenticule base plate 211, and conformal with geometrical pattern 210.
Then, utilize for example Metalorganic chemical vapor deposition technology, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds n type admixture, silicon (Si) etc. for example, epitaxial growth n type (first is electrical) semiconductor layer 215 on resilient coating 213.Wherein, the material of n type semiconductor layer 215 preferably can for example be n type aluminum indium nitride gallium or n type gallium nitride.Utilize for example Metalorganic chemical vapor deposition technology again, epitaxial growth active layer 217 on n type semiconductor layer 215, wherein active layer 217 can for example be multiple quantum trap (MQW) structure of being made up of aluminum indium nitride gallium (AlGaInN) and gallium nitride preferably.
After treating that active layer 217 forms, can utilize for example Metalorganic chemical vapor deposition mode, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds p type admixture, magnesium (Mg) etc. for example, growing p-type on active layer 217 (second is electrical) semiconductor layer 219.So far finish epitaxial growth steps, on microlens substrate 211, formed epitaxial structure 221.
Utilize transformation coupling formula plasma (Transformer Coupled Plasma then; TCP) carry out etch process,, make outside the n type semiconductor layer 215 of a part is exposed to the p type semiconductor layer 219 that removes a part and the active layer 217 of a part.Form first electrode 223 again on the part outside n type semiconductor layer 215 is exposed to.In a preferred embodiment of the invention, the material of first electrode 223 is selected from by indium (In), aluminium (Al), titanium (Ti), gold (Au), tungsten (W), indium tin (InSn), titanium nitride (TiN), silicon tungsten (WSi), platinum indium (PtIn
2), rubidium/aluminium (Nd/Al), nickel/silicon (Ni/Si), palladium/aluminium (Pd/Al), tantalum/aluminium (Ta/Al), titanium/silver (Ti/Ag), tantalum/silver (Ta/Ag), titanium/aluminium (Ti/Al), titanium/gold (Ti/Au), titanium/titanium nitride (Ti/TiN), zirconium/zirconium nitride (Zr/ZrN), gold/germanium/nickel (Au/Ge/Ni), chromium/nickel/gold (Cr/Au/Ni), nickel/chromium/gold (Ni/Cr/Au), titanium/palladium/gold (Ti/Pd/Au), titanium/platinum/gold (Ti/Pt/Au), titanium/aluminium/nickel/gold (Ti/Al/Ni/Au), the group that gold/silicon/titanium/gold/silicon (Au/Si/Ti/Au/Si) and gold/nickel/titanium/silicon/titanium (Au/Ni/Ti/Si/Ti) are formed.
Then, on p type semiconductor layer 219, form transparency conducting layer 225, on transparency conducting layer 225, form second electrode 227 again.In a preferred embodiment of the invention, the material of transparency conducting layer 225 can be the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper or above-mentioned material.The material of second electrode 227 then is selected from by nickel/gold (Au/Ni), nickel oxide/gold (NiO/Au), palladium/silver/gold/titanium/gold (Pd/Ag/Au/Ti/Au), platinum/rubidium (Pt/Ru), titanium/platinum/gold (Ti/Pt/Au), palladium/nickel (Pd/Ni), nickel/palladium/gold (Ni/Pd/Au), platinum/nickel/gold (Pt/Ni/Au), rubidium/gold (Ru/Au), niobium/gold (Nb/Au), cobalt/gold (Co/Au), platinum/nickel/gold (Pt/Ni/Au), nickel/platinum (Ni/Pt), nickel indium (Ni/In) and platinum indium (Pt
3In
7) group formed.
Afterwards, on the lower surface 205 of lenticule base plate 211, form reflector 229 again.In the preferred embodiments of the present invention, Bragg mirror (the Distributed Bragg Reflector of reflector 229 for being formed by the multilevel oxide film; DBR), 1-D photon crystal film or metal material.Wherein metal material is selected from the group of being made up of aluminium (Al), gold (Au), platinum (Pt), zinc (Pb), silver (Ag), nickel (Ni), germanium (Ge), indium (In), tin (Sn) and alloy thereof.
Please refer to Fig. 3 A to 3D, Fig. 3 A to 3D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 300 that third preferred embodiment of the invention illustrated.
At first please refer to Fig. 3 A, transparency carrier 301 is provided, wherein transparency carrier 301 has upper surface 303 and with respect to the lower surface 305 of upper surface 303.
Then please refer to Fig. 3 B, can utilize for example depositional mode earlier, above the upper surface 303 of transparency carrier 301, form resilient coating 313.In the preferred embodiments of the present invention, resilient coating 313 is formed by aluminium nitride (AlN) or gallium nitride (GaN).
Then, utilize for example Metalorganic chemical vapor deposition technology, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds n type admixture, silicon (Si) etc. for example, epitaxial growth n type (first is electrical) semiconductor layer 315 on resilient coating 313.Wherein, the material of n type semiconductor layer 315 preferably can for example be n type aluminum indium nitride gallium or n type gallium nitride., epitaxial growth active layer 317 on n type semiconductor layer 315, wherein active layer 317 can for example be multiple quantum trap (MQW) structure of being made up of aluminum indium nitride gallium (AlGaInN) and gallium nitride preferably.
After active layer 317 forms, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds p type admixture, magnesium (Mg) etc. for example, growing p-type on active layer 317 (second is electrical) semiconductor layer 319.So far finished epitaxial growth steps.Then, carry out etch process, the lower surface 305 of etching transparency carrier 301 forms a plurality of depressed parts 307 thus on lower surface 305.In a preferred embodiment of the invention, lower surface 305 part that etched technology did not remove, then present a plurality of protuberances 309 with printing opacity and scattered beam function, its shape can be as semicircle sphere, pyramid, trapezoidal, arc, pyramid or difform combination.And these protuberances 309 can be continuous distribution or discontinuously arranged arrangement, are combined into a geometrical pattern 310 at lower surface 305 thus.Each protuberance 309 can be considered a kind of lenticule with light scattering function, therefore by above-mentioned steps, can obtain the lenticule base plate 311 that a kind of surface has geometrical pattern 310.In present embodiment, geometrical pattern 310 is formed (being illustrated as Fig. 3 C) by a plurality of pyramid protuberances 309 of periodically arranging continuously and having a platform that are.
Utilize transformation coupling formula plasma (Transformer Coupled Plasma then; TCP) carry out etch process,, make outside the n type semiconductor layer 315 of a part is exposed to the p type semiconductor layer 319 that removes a part and the active layer 317 of a part.Form first electrode 323 again on the part outside n type semiconductor layer 315 is exposed to.In a preferred embodiment of the invention, the material of first electrode 323 is selected from by indium (In), aluminium (Al), titanium (Ti), gold (Au), tungsten (W), indium tin (InSn), titanium nitride (TiN), silicon tungsten (WSi), platinum indium (PtIn
2), rubidium/aluminium (Nd/Al), nickel/silicon (Ni/Si), palladium/aluminium (Pd/Al), tantalum/aluminium (Ta/Al), titanium/silver (Ti/Ag), tantalum/silver (Ta/Ag), titanium/aluminium (Ti/Al), titanium/gold (Ti/Au), titanium/titanium nitride (Ti/TiN), zirconium/zirconium nitride (Zr/ZrN), gold storage/nickel (Au/Ge/Ni), chromium/nickel/gold (Cr/Au/Ni), nickel/chromium/gold (Ni/Cr/Au), titanium/palladium/gold (Ti/Pd/Au), titanium/platinum/gold (Ti/Pt/Au), titanium/aluminium/nickel/gold (Ti/Al/Ni/Au), the group that gold/silicon/titanium/gold/silicon (Au/Si/Ti/Au/Si) and gold/nickel/titanium/silicon/titanium (Au/Ni/Ti/Si/Ti) are formed.
Then, on p type semiconductor layer 319, form transparency conducting layer 325, on transparency conducting layer 325, form second electrode 327 again.In a preferred embodiment of the invention, the material of transparency conducting layer 325 can be the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper or above-mentioned material.The material of second electrode 327 then is selected from by nickel/gold (Au/Ni), nickel oxide/gold (NiO/Au), palladium/silver/gold/titanium/gold (Pd/Ag/Au/Ti/Au), platinum/rubidium (Pt/Ru), titanium/platinum/gold (Ti/Pt/Au), palladium/nickel (Pd/Ni), nickel/palladium/gold (Ni/Pd/Au), platinum/nickel/gold (Pt/Ni/Au), rubidium/gold (Ru/Au), niobium/gold (Nb/Au), cobalt/gold (Co/Au), platinum/nickel/gold (Pt/Ni/Au), nickel/platinum (Ni/Pt), nickel indium (Ni/In) and platinum indium (Pt
3In
7) group formed.
Afterwards, on the lower surface 305 of lenticule base plate 311, form the reflector 329 conformal again, to form light-emitting diode 300 with geometrical pattern 310.In a preferred embodiment of the invention, Bragg reflecting layer (the Distributed BraggReflector of reflector 329 for being formed by the multilevel oxide film; DBR), 1-D photon crystal film or metal material.Wherein metal material is selected from the group of being made up of aluminium (Al), gold (Au), platinum (Pt), zinc (Pb), silver (Ag), nickel (Ni), germanium (Ge), indium (In), tin (Sn) and alloy thereof.
Please refer to Fig. 4 A to 4D, Fig. 4 A to 4D is according to the series of process profile of a kind of gallium nitride light-emitting diode element 400 that four preferred embodiment of the invention illustrated.
At first please refer to Fig. 4 A, transparency carrier 401 is provided, wherein transparency carrier 401 has upper surface 403 and with respect to the lower surface 405 of upper surface 403.
Then please refer to Fig. 4 B, can utilize for example depositional mode earlier, above the upper surface 403 of transparency carrier 401, form resilient coating 413.In a preferred embodiment of the invention, resilient coating 413 is formed by aluminium nitride (AlN) or gallium nitride (GaN).
Then, utilize for example Metalorganic chemical vapor deposition technology, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds n type admixture, silicon (Si) etc. for example, epitaxial growth n type (first is electrical) semiconductor layer 415 on resilient coating 413.Wherein, the material of n type semiconductor layer 415 preferably can for example be n type aluminum indium nitride gallium or n type gallium nitride.Epitaxial growth active layer 417 on n type semiconductor layer 415, wherein active layer 417 can for example be multiple quantum trap (MQW) structure of being made up of aluminum indium nitride gallium (AlGaInN) and gallium nitride preferably.
After treating that active layer 417 forms, use trimethyl gallium (Trimethylgallium; TMGa), the combination in any of trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia or above-mentioned gas is as reacting gas, and adds p type admixture, magnesium (Mg) etc. for example, growing p-type on active layer 417 (second is electrical) semiconductor layer 419.So far finished epitaxial growth steps.Then, carry out evaporation or barbola work, on lower surface 405, form a plurality of protruding grains 409 with printing opacity and scattered beam function.In a preferred embodiment of the invention, protruding grain 409 is by the protruding grain of evaporation process formed insulation on lower surface 405, and material is silica, silicon dioxide or silicon nitride.But in other embodiment of the present invention, protruding grain 409 is fixedly arranged on the printing opacity diaphragm 407, is pasted on lower surface 405 by barbola work again.The profile of protruding grain 409 for example comprises semicircle sphere, pyramid, trapezoidal, arc, pyramid or difform combination, and these protuberances 409 can continuous distribution or discontinuously arranged, combines geometrical pattern 410 at lower surface 405 thus.Each protruding grain 409 can be considered a kind of lenticule with light scattering function, therefore by above-mentioned steps, can obtain the lenticule base plate 411 that a kind of surface has geometrical pattern 410.In the present embodiment, geometrical pattern 410 is formed (being illustrated as Fig. 4 C) by a plurality of 409 of continuously arranged semicircle spherical male grains of one-tenth periodicity.
Utilize transformation coupling formula plasma (Transformer Coupled Plasma then; TCP) carry out etch process,, make outside the n type semiconductor layer 415 of a part is exposed to the p type semiconductor layer 419 that removes a part and the active layer 417 of a part.Form first electrode 423 again on the part outside n type semiconductor layer 415 is exposed to.In a preferred embodiment of the invention, the material of first electrode 423 is selected from by indium (In), aluminium (Al), titanium (Ti), gold (Au), tungsten (W), indium tin (InSn), titanium nitride (TiN), silicon tungsten (WSi), platinum indium (PtIn
2), rubidium/aluminium (Nd/Al), nickel/silicon (Ni/Si), palladium/aluminium (Pd/Al), tantalum/aluminium (Ta/Al), titanium/silver (Ti/Ag), tantalum/silver (Ta/Ag), titanium/aluminium (Ti/Al), titanium/gold (Ti/Au), titanium/titanium nitride (Ti/TiN), zirconium/zirconium nitride (Zr/ZrN), gold/germanium/nickel (Au/Ge/Ni), chromium/nickel/gold (Cr/Au/Ni), nickel/chromium/gold (Ni/Cr/Au), titanium/palladium/gold (Ti/Pd/Au), titanium/platinum/gold (Ti/Pt/Au), titanium/aluminium/nickel/gold (Ti/Al/Ni/Au), the group that gold/silicon/titanium/gold/silicon (Au/Si/Ti/Au/Si) and gold/nickel/titanium/silicon/titanium (Au/Ni/Ti/Si/Ti) are formed.
Then, on n type semiconductor layer 419, form transparency conducting layer 425, on transparency conducting layer 425, form second electrode 427 again.In a preferred embodiment of the invention, the material of transparency conducting layer 425 can be the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper or above-mentioned material.The material of second electrode 427 then is selected from by nickel/gold (Au/Ni), nickel oxide/gold (NiO/Au), palladium/silver/gold/titanium/gold (Pd/Ag/Au/Ti/Au), platinum/rubidium (Pt/Ru), titanium/platinum/gold (Ti/Pt/Au), palladium/nickel (Pd/Ni), nickel/palladium/gold (Ni/Pd/Au), platinum/nickel/gold (Pt/Ni/Au), rubidium/gold (Ru/Au), niobium/gold (Nb/Au), cobalt/gold (Co/Au), platinum/nickel/gold (Pt/Ni/Au), nickel/platinum (Ni/Pt), nickel indium (Ni/In) and platinum indium (Pt
3In
7) group formed.
Afterwards, on the lower surface 405 of lenticule base plate 411, form reflector 429 again.Wherein reflector 429 is with conformal by protruding grain 409 geometrical patterns that combined 410.In the preferred embodiments of the present invention, Bragg reflecting layer (the DistributedBragg Reflector of reflector 429 for being formed by the multilevel oxide film; DBR), 1-D photon crystal film or metal material.Wherein metal material is selected from the group of being made up of aluminium (Al), gold (Au), platinum (Pt), zinc (Pb), silver (Ag), nickel (Ni), germanium (Ge), indium (In), tin (Sn) and alloy thereof.
Light 431 by the active layer 417 of light-emitting diode 400 is throwed via after 429 reflections of reflector, through the refraction of excess convexity grain 409 (lenticule) curved surfaces, can change its incident angle and incident path earlier again.Via after reflection and the refraction, the incidence angle of light 431 is greater than transparency electrode 425 critical angle with the interface of external environment, and penetrates to the external world, and the light that therefore can significantly improve light-emitting diode 400 takes out efficient.
The above embodiment of the present invention provides a kind of and has a plurality of lenticular transparency carriers, and above substrate the growing epitaxial structure, and form reflector layer in transparency carrier below.Via after reflector and lenticular reflection and the scattering, the incident angle of light can be changed by the light that active layer throwed of epitaxial structure, the light extraction efficiency of light-emitting diode can be increased.
Therefore the light-emitting diode that the foregoing description provided not only has the advantage of high light extraction efficiency, and can not damage the epitaxial structure of optical diode in technology, more can improve the process yield of light-emitting diode, reaches above-mentioned goal of the invention.
Though the present invention discloses as above with above preferred embodiment; right its is not in order to limit the present invention; those of ordinary skill in the technical field under any; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (12)
1. light-emitting diode comprises:
Lenticule base plate, the upper surface of this lenticule base plate has a plurality of lenticules;
The reflector is positioned on the lower surface of this lenticule base plate;
Resilient coating is positioned on this lenticule base plate upper surface;
The first electrical semiconductor layer is positioned on this resilient coating;
Active layer is positioned on this first electrical semiconductor layer of a part;
The second electrical semiconductor layer is positioned on this active layer;
First electrode is positioned at this first electrical semiconductor layer and does not cover on another part of this active layer; And
Second electrode is positioned on this second electrical semiconductor layer.
2. light-emitting diode as claimed in claim 1 also comprises transparency conducting layer, between this second electrode and this second electrical semiconductor layer.
3. light-emitting diode as claimed in claim 1, wherein this reflector is by being formed by the formed Bragg reflecting layer of multilevel oxide film, 1-D photon crystal film or by metal material.
4. light-emitting diode as claimed in claim 1, wherein this substrate is an aluminum oxide substrate.
5. light-emitting diode as claimed in claim 4, wherein these lenticules are made of a plurality of protuberance, and these protuberances are the part of this aluminum oxide substrate.
6. light-emitting diode as claimed in claim 4, wherein these lenticules are made of a plurality of protruding grains, and wherein the material of these protruding grains is silica, silicon dioxide or silicon nitride.
7. light-emitting diode comprises:
Lenticule base plate should have a plurality of lenticules for the lower surface of lens substrate;
The reflector is positioned on this lower surface;
Resilient coating is positioned on this lenticule base plate upper surface;
The first electrical semiconductor layer is positioned on this resilient coating;
Active layer is positioned on this first electrical semiconductor layer of a part;
The second electrical semiconductor layer is positioned on this active layer;
First electrode is positioned at this first electrical semiconductor layer and does not cover on another part of this active layer; And
Second electrode is positioned on this second electrical semiconductor layer.
8. light-emitting diode as claimed in claim 7 also comprises transparency conducting layer, between this second electrode and this second electrical semiconductor layer.
9. light-emitting diode as claimed in claim 7, wherein this reflector is by being formed Bragg reflecting layer, 1-D photon crystal film by the multilevel oxide film or being made up of metal material.
10. light-emitting diode as claimed in claim 7, wherein this lenticule base plate is an aluminum oxide substrate.
11. light-emitting diode as claimed in claim 10, wherein these lenticules are made of a plurality of protuberances, and these protuberances are the part of this aluminum oxide substrate.
12. light-emitting diode as claimed in claim 10, wherein these lenticules are made of a plurality of protruding grains, and wherein the material of these protruding grains is silica, silicon dioxide or silicon nitride.
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| CNA2007101039808A CN101308890A (en) | 2007-05-17 | 2007-05-17 | Light emitting diode element and manufacture method thereof |
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| CNA2007101039808A CN101308890A (en) | 2007-05-17 | 2007-05-17 | Light emitting diode element and manufacture method thereof |
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| CN101308890A true CN101308890A (en) | 2008-11-19 |
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| CNA2007101039808A Pending CN101308890A (en) | 2007-05-17 | 2007-05-17 | Light emitting diode element and manufacture method thereof |
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| CN101515624B (en) * | 2009-03-31 | 2011-02-16 | 上海蓝光科技有限公司 | Method for manufacturing LED chips |
| CN102487115A (en) * | 2010-12-03 | 2012-06-06 | 新世纪光电股份有限公司 | Light emitting diode |
| CN102903820A (en) * | 2012-09-17 | 2013-01-30 | 京东方科技集团股份有限公司 | Light emitting diode chip and manufacture method thereof |
| CN103354956A (en) * | 2011-02-11 | 2013-10-16 | 首尔Opto仪器股份有限公司 | Light emitting diode having photonic crystal structure and method of fabricating the same |
| CN103855267A (en) * | 2014-03-07 | 2014-06-11 | 太原理工大学 | LED light-emitting component based on photonic crystal reflector |
| CN103730546B (en) * | 2013-12-27 | 2017-06-06 | 中国电子科技集团公司第四十八研究所 | A kind of LED structure of highlight extract efficiency and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101515624B (en) * | 2009-03-31 | 2011-02-16 | 上海蓝光科技有限公司 | Method for manufacturing LED chips |
| CN102487115A (en) * | 2010-12-03 | 2012-06-06 | 新世纪光电股份有限公司 | Light emitting diode |
| CN102487115B (en) * | 2010-12-03 | 2014-11-19 | 新世纪光电股份有限公司 | Light emitting diode |
| CN103354956A (en) * | 2011-02-11 | 2013-10-16 | 首尔Opto仪器股份有限公司 | Light emitting diode having photonic crystal structure and method of fabricating the same |
| US9224917B2 (en) | 2011-02-11 | 2015-12-29 | Seoul Viosys Co., Ltd. | Light emitting diode having photonic crystal structure and method of fabricating the same |
| CN103354956B (en) * | 2011-02-11 | 2016-09-14 | 首尔伟傲世有限公司 | There is light emitting diode and the manufacture method thereof of photon crystal structure |
| CN102903820A (en) * | 2012-09-17 | 2013-01-30 | 京东方科技集团股份有限公司 | Light emitting diode chip and manufacture method thereof |
| CN103730546B (en) * | 2013-12-27 | 2017-06-06 | 中国电子科技集团公司第四十八研究所 | A kind of LED structure of highlight extract efficiency and preparation method thereof |
| CN103855267A (en) * | 2014-03-07 | 2014-06-11 | 太原理工大学 | LED light-emitting component based on photonic crystal reflector |
| CN109923742A (en) * | 2016-11-02 | 2019-06-21 | 索尼公司 | Light-emitting component and its manufacturing method |
| CN109923742B (en) * | 2016-11-02 | 2021-10-22 | 索尼公司 | Light emitting element and method for manufacturing the same |
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