CN101308802A - Semiconductor device of sensing type and its manufacture - Google Patents
Semiconductor device of sensing type and its manufacture Download PDFInfo
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- CN101308802A CN101308802A CNA2007101074784A CN200710107478A CN101308802A CN 101308802 A CN101308802 A CN 101308802A CN A2007101074784 A CNA2007101074784 A CN A2007101074784A CN 200710107478 A CN200710107478 A CN 200710107478A CN 101308802 A CN101308802 A CN 101308802A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract
A sensing semiconductor device and the fabrication method thereof are disclosed. A plurality of metal lines are developed on a light-transmitting carrier plate; a plurality of sensing chips which are processed with thickness reduction and chip probing in advance and are provided with conductive lug bosses on the solder pads are electrically connected to the metal lines on the light-transmitting carrier plate; a first dielectric layer is filled among the sensing chips to cover the metal lines and the areas around the sensing chips; a second dielectric layer and a groove exposed outside the metal lines are developed on the sensing chips and on the first dielectric layer; a plurality of leads electrically connected to the metal wires are arranged on the second dielectric layer; incision is carried out among the sensing chips so as to form a plurality of sensing semiconductor devices. In this way, problems of line rapture due to that the included angle at the joint of the lines is acute, poor electric connection of the lines and damage to the chips caused by contraposition error when incising from the backside of the wafer, and the increase of fabrication cost resulted from direct sputtering time after time when shaping the lines can be avoided.
Description
Technical field
The present invention relates to a kind of semiconductor device of sensing type and method for making thereof, particularly relate to a kind of crystal wafer chip dimension encapsulation (Wafer-Level Chip Scale Package, semiconductor device of sensing type WLCSP) and method for making thereof.
Background technology
Traditional image sensing formula packaging part (Image sensor package) mainly is sensor chip (Sensor chip) to be connect place on the chip bearing member, and after being electrically connected this sensor chip and chip bearing member by bonding wire, cover a glass in this sensor chip top, can be captured by this sensor chip for image light.So, this image sensing formula packaging part of finishing structure dress can be integrated into as on printed circuit board (PCB) (PCB) external device (ED) of etc.ing for factory of system, for as digital camera (DSC), digital camera (DV), optical mouse, reach the application of various electronic products such as mobile phone.
Simultaneously along with the message transmission capacity continues amplification, and electronic product microminiaturization and portable development trend, cause the high I/O (I/O) of general integrated circuit, high heat radiation, and the demand of size downsizing comes into one's own more, also impel the encapsulation kenel of integrated circuit electrically to reach undersized direction evolution towards height, therefore, industry a kind of crystal wafer chip dimension encapsulation (Wafer-Level Chip Scale Package by developing, WLCSP) semiconductor device of sensing type, use making that to finish package semiconductor device only little greater than the sensor chip size of integrating wherein, and then effectively be applied in the electronic product of miniaturization.
See also Figure 1A to Fig. 1 H, U.S. Pat 6,777,767 disclosed semiconductor device of sensing type and method for making schematic diagram thereof, it mainly provides the wafer 10A of a plurality of sensor chips 10 of a tool, utilizes sputtering way (sputtering) to form extended link 11 (shown in Figure 1A) with 101 of weld pads in adjacent sensor chip 10; Again a glass 12 is sticked by an adhesion layer 13 and place on this extended link 11 (shown in Figure 1B); Then utilize this wafer of lapping mode thinning 10A back side (shown in Fig. 1 C); With this wafer of 10 cuttings of the corresponding adjacent sensor chip of cutter 10A back side, be etched with along previous cut place in the electric paste etching mode again and expose outside this extended link 11 (shown in Fig. 1 D) earlier; Utilize viscose 14 with glutinous another glass 15 and the dielectric layer 16 (shown in Fig. 1 E) of covering in this wafer 10A back side; This wafer of 10 cuttings of corresponding adjacent sensor chip 10A back side is passed through this extended link 11 with cutting, and then is formed an inclined notch 17 (shown in Fig. 1 F); Utilize sputtering way to form metals coiling 18, and make this metal coiling 18 be electrically connected to this extended link 11 (shown in Fig. 1 G) in this inclined notch 17 surfaces and near dielectric layer 16 surfaces should inclined notch 17; Plant and connect soldered ball 19 in this metal 18 bottoms that wind the line afterwards, and cut single job, to make the semiconductor device of sensing type (shown in Fig. 1 H) of crystal wafer chip dimension encapsulation along 10 of this sensor chips respectively.
But, in aforesaid semiconductor device of sensing type, owing to form the inclined notch relation from this wafer rear, therefore this semiconductor device side is to present inclination corner cut form after cutting single job, that is its vertical section is trapezoidal (plane width is shortened gradually by last) structure downwards, thereby the metal coiling that is formed at this semiconductor device side is acute angle with the extended link junction of chip end face weld pad and contacts, concentrate and to cause the junction breakage problem and stress easily takes place, moreover, be to form inclined notch in manufacture process from wafer back part, because of being difficult for aligning to the tram, easily cause the offset that is provided with of inclined notch, cause the metal coiling can't be connected, even damage chip with extended link.
In addition, need successively utilize sputtering way to form extended link and metal coiling in its manufacture process, cause the too high problem of manufacture process cost.
Moreover, in the wafer thinning operation, place on glass owing to this wafer is glutinous earlier, therefore relative respectively this sensor chip is not provided with for connecing the adhesion layer of putting glass in the sensing area of middle position in this wafer, that is cause the unsettled of this part, so promptly easily produce the problem of chip rhegma because of the stress that grinds, therefore, the thickness of wafer is the thinnest after this thinning only can be to 150 μ m.
In addition,, do not consider chip defective products problem on wafer,, still must continue to make, cause waste of material and cost to increase problem even if so will cause having the defective products chip in this wafer because of this manufacture process is directly to carry out.
Therefore, how to design a kind of crystal wafer chip dimension semiconductor device of sensing type and method for making thereof of avoiding circuit generation breakage problem, can avoid again simultaneously in the prior art causing electrical bad connection of circuit and chip to be damaged and the high problem of manufacture process cost, really be the required problem of urgently facing on the association area from the bit errors of wafer rear cutting.
Summary of the invention
In view of the defective of aforementioned prior art, a purpose of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, thereby can avoid the junction because of angle breakage problem to take place sharply.
A further object of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, thereby can avoid in the prior art causing electrical bad connection of circuit and chip to damage problem from the bit errors of wafer rear cutting.
Another object of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, and institute is caused manufacture process cost increase problem when avoiding direct sputter to form circuit.
A multiple purpose of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, can avoid prior art when wafer thinning, and is unsettled to the position because of the chip section phase-splitting, causes chip to damage easily, and further thinning wafer problem.
Another purpose of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, can guarantee that employed chip is the non-defective unit chip.
For reaching aforementioned and other purpose, the method for making of semiconductor device of sensing type of the present invention comprises: a printing opacity support plate and a plurality of sensor chip are provided, be formed with many metallic traces on this printing opacity support plate, respectively this sensor chip has relative active surface and non-moving face, this active surface is provided with a sensing area, be provided with a plurality of weld pads on every side, and on this weld pad, be formed with conductive projection, connect on the metallic circuit of putting and be electrically connected at this printing opacity support plate by this conductive projection for those sensor chips; Correspondence is respectively filled first dielectric layer between this sensor chip on this printing opacity support plate, reaches metallic circuit around coating this sensor chip; On this sensor chip and first dielectric layer, cover one second dielectric layer, and first and second dielectric layer place formation groove between those sensor chips, to expose outside the metallic circuit on this printing opacity support plate; On this second dielectric layer, form many leads, and make this lead be electrically connected to the metallic circuit that exposes outside this first and second dielectric layer; And along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.
Moreover, in another preferred embodiment of the present invention, also can on this printing opacity support plate, directly form the dielectric layer that covers this sensor chip and metallic circuit, to omit the manufacture process of second dielectric layer.
In addition, can on this second dielectric layer and lead, form again and refuse layer, and make this refuse layer to be formed with exposed portions serve lead beyond the perforate; And on this lead that exposes, plant conducting element.Also can refuse the glutinous stiffener that covers just like useless chip (dummy die) or glass on the layer, use and strengthen semiconductor device intensity in this; Also or on this sensor chip and first dielectric layer with respect to second dielectric layer between the glutinous stiffener that covers just like useless chip (dummy die) or glass, to increase semiconductor device intensity, again in second dielectric layer between those sensor chips, stiffener and second dielectric layer place form the groove that expose outside metallic circuit printing opacity support plate on, and on this second dielectric layer, form the lead that is electrically connected to this metallic circuit thereafter.
In addition, between this printing opacity support plate and this metallic circuit, can be formed with resilient coating again, to slow down metallic circuit stress.
In the method for making of aforementioned semiconductor device of sensing type of the present invention, this connects and places the manufacture process of the sensor chip on the printing opacity support plate to comprise: a wafer with a plurality of sensor chips is provided, this wafer and sensor chip have relative active surface and non-active surface, and this sensor chip active surface is provided with a sensing area, is provided with a plurality of weld pads on every side; After tested (Chip Probing, CP) confirm this sensor chip respectively good corrupt after, put conductive projection on the weld pad of those good chips (Good Die), to connect; And the non-active surface of this wafer of thinning and cut single job, to form a plurality of sensor chips that are provided with conductive projection.
By aforesaid method for making, the present invention discloses a kind of semiconductor device of sensing type again, comprising: the printing opacity support plate; Metallic circuit is formed at this printing opacity support plate marginal surface; Sensor chip has relative active surface and non-active surface, is formed with a sensing area and a plurality of weld pad on this active surface, and is provided with conductive projection in this weld pad, connects by this conductive projection for this sensor chip to place on this metallic circuit; First dielectric layer covers this sensor chip side; Second dielectric layer is covered in the non-active surface of this sensor chip; And lead, be formed on this first and second dielectric layer and be electrically connected to this metallic circuit.
This semiconductor device of sensing type includes again: refuse layer, be formed on this second dielectric layer and the lead, and make this refuse layer to be formed with exposed portions serve lead beyond the perforate; And plant conducting element on this exposed electric wire.In addition refuse to be formed with again on the layer stiffener, use and strengthen semiconductor device intensity just like useless chip (dummydie) or glass in this; Also or in the stiffener that is formed with between with respect to second dielectric layer on this sensor chip and first dielectric layer just like useless chip (dummy die) or glass, to increase semiconductor device intensity.Moreover between this printing opacity support plate and this metallic circuit, be formed with resilient coating again, to slow down metallic circuit stress.
Another preferred embodiment of semiconductor device of sensing type of the present invention comprises: the printing opacity support plate; Metallic circuit is formed at this printing opacity support plate marginal surface; Sensor chip has relative active surface and non-active surface, is formed with a sensing area and a plurality of weld pad on this active surface, and is provided with conductive projection in this weld pad, connects by this conductive projection for this sensor chip to place on this metallic circuit; Dielectric layer covers this sensor chip side and the non-active surface of this sensor chip; And lead, be formed on this dielectric layer and be electrically connected to this metallic circuit.
Therefore, semiconductor device of sensing type of the present invention and method for making thereof at first form many metallic traces on a printing opacity support plate, provide a plurality of weld pads to be provided with the sensor chip of conductive projection simultaneously, thinning in advance of those sensor chips and (chip probing after tested, CP) confirm as non-defective unit chip (Good Die), use and avoid prior art when wafer thinning, because of the chip section phase-splitting unsettled to the position, easily cause chip to damage and can't further thinning problem, simultaneously also can guarantee that employed chip is the non-defective unit chip, is electrically connected on the metallic circuit of this printing opacity support plate for those sensor chips by this conductive projection; Then corresponding respectively the filling between this sensor chip coats this sensor chip first dielectric layer on every side on this printing opacity support plate, and in this sensor chip, cover second dielectric layer on first dielectric layer, and be formed with the groove that exposes outside this printing opacity support plate surface metal circuit, on this second dielectric layer, to form the many leads that are electrically connected to this metallic circuit, also or can on this printing opacity support plate, directly form and cover this sensor chip and metallic circuit and be filled in the respectively dielectric layer between this sensor chip, omit the manufacture process of second dielectric layer, and be formed with the groove that exposes outside this printing opacity support plate surface metal circuit, on this dielectric layer, to form the many leads that are electrically connected to this metallic circuit; Be provided with again afterwards and refuse layer and conducting element, and along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.In the time of so can avoiding prior art to form semiconductor device of sensing type, sharply rupture, damage because of bit errors causes electrical bad connection of circuit and chip when wafer rear cuts, cause when repeatedly directly sputter forms circuit problems such as manufacture process cost increase because of angle in the junction.
Description of drawings
Figure 1A to Fig. 1 H is existing U.S. Pat 6,777,767 disclosed semiconductor device of sensing type and method for making schematic diagram thereof;
Fig. 2 A to Fig. 2 K is the schematic diagram of semiconductor device of sensing type of the present invention and method for making first embodiment thereof;
Fig. 3 A to Fig. 3 D is the schematic diagram of semiconductor device of sensing type of the present invention and method for making second embodiment thereof;
Fig. 4 is the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 3rd embodiment thereof;
Fig. 5 is the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 4th embodiment thereof;
Fig. 6 is the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 5th embodiment thereof; And
Fig. 7 A and Fig. 7 B are the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 6th embodiment thereof.
The component symbol explanation
10 sensor chip 10A wafers
101 weld pads, 11 extended links
12 glass, 13 adhesion layers
14 viscoses, 15 glass
16 dielectric layers, 17 inclined notch
18 metals, 19 soldered balls that wind the line
20 printing opacity support plates, 201 ponding structures
21 thin conductive layers, 22 resistance layers
220 openings, 23 metallic circuits
24 first dielectric layers, 25 sensor chips
250 wafers, 251 active surfaces
252 non-active surface 253 sensing areas
254 weld pads, 255 conductive projections
26 second dielectric layers, 260 grooves
26 ' viscose, 27 leads
28 refuse layer 29 conducting elements
30 dielectric layers, 31 stiffeners
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this specification disclosed.
First embodiment
See also Fig. 2 A to Fig. 2 K, be the schematic diagram of semiconductor device of sensing type of the present invention and method for making first embodiment thereof.
Shown in Fig. 2 A and Fig. 2 B, provide one for example to be the printing opacity support plate 20 of glass, on this printing opacity support plate 20, to utilize as the thin conductive layer 21 of sputtering way (sputtering) formation as titanizing tungsten/copper (TiW/Cu) or titanium/nickel vanadium (Ti/NiV) etc.; On this thin conductive layer 21, cover resistance layer 22 again, and make this resistance layer 22 be formed with opening 220 to expose outside this part thin conductive layer 21; Thereby by electroplating process to form metallic circuit 23 on the thin conductive layer 21 in this resistance layer opening 220, this metallic circuit 23 can be copper (Cu)/nickel (Ni) or copper (Cu)/tin (Sn) or copper (Cu)/nickel (Ni)/scolding tin (Solder), and thickness is about 3-10 μ m.
Then be that removable this resistance layer 22 reaches the thin conductive layer 21 that is covered for this resistance layer 22, use on this printing opacity support plate 20 surfaces and form many metallic traces 23.
This printing opacity support plate 20 is divided in advance a plurality of support plates unit, and image light can be captured by sensor chip during with the follow-up formation of correspondence semiconductor device of sensing type of the present invention, and these many metallic traces 23 promptly are formed between adjacent support plate unit.
Shown in Fig. 2 C, one wafer 250 with a plurality of sensor chips 25 is provided simultaneously, this wafer 250 and sensor chip 25 have relative active surface 251 and non-active surface 252, and this sensor chip active surface 251 is provided with a sensing area 253, be provided with a plurality of weld pads 254 on every side, (Chip Probing after tested, CP) confirm this sensor chip 25 respectively good corrupt after, put as gold thread shaping projection (Au Stud bump) on the weld pad 254 of those good chips (Good Die), to connect, the conductive projection 255 of gold projection (Au bump) or solder bump (solder bump) etc., and the non-active surface 252 of this wafer of thinning and cut list.
Compare aforesaid U.S. Patent in the wafer thinning operation, because of the chip section phase-splitting unsettled to the position, easily cause chip to damage and can't further thinning problem, because wafer thinning operation of the present invention is directly this wafer to be carried out, therefore can grind and be thinned to 50-100 μ m, and needn't worry chip rhegma problem.
Shown in Fig. 2 D, utilize hot pressing or reflow mode, connect on the metallic circuit 23 of putting and be electrically connected at this printing opacity support plate 20 by its conductive projection 255 with the sensor chip that those are good 25.
Shown in Fig. 2 E and Fig. 2 F, correspondence respectively 25 fillings of this sensor chip such as epoxy resin (Epoxy) or pi (Polyimide on this printing opacity support plate 20, first dielectric layer 24 of macromolecular material (polymer) such as PI), and control the sensing area 253 of its unlikely covering to this sensor chip, and cover around this metallic circuit 23 and the sensor chip 25.
Then grind this first dielectric layer 24, use that these first dielectric layer, 24 surfaces are flushed with these sensor chip 25 non-active surfaces.
Shown in Fig. 2 G and Fig. 2 H, on this sensor chip 25 and first dielectric layer 24, cover one second dielectric layer 26, this second dielectric layer 26 can for example be epoxy resin (Epoxy) or pi macromolecular materials (polymer) such as (PI).
And utilize modes such as cutting, etching, electricity slurry, laser, to pass the groove 260 of this first and second dielectric layer 24,26 in 25 formation of those sensor chips, use the metallic circuit 23 that exposes outside these printing opacity support plate 20 surfaces.
Shown in Fig. 2 I, reshuffle layer (Redistribution Layer by circuit, RDL) technology with many leads 27 of formation on this second dielectric layer 26, and makes this lead 27 be electrically connected to the metallic circuit 23 that exposes outside this first and second dielectric layer 24,26.The material of this lead 27 for example is titanium/copper/copper/nickel (Ti/Cu/Cu/Ni), titanium/copper/nickel (Ti/Cu/Ni), titanizing tungsten/copper/nickel (TiW/Cu/Ni), aluminium/nickel vanadium/copper (Al/NiV/Cu), Taiization Tungsten/gold (TiW/Au) etc.
Afterwards can be along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.
Also or shown in Fig. 2 J and Fig. 2 K, after forming lead 27, on this second dielectric layer 26 and lead 27, cover one and refuse layer 28, and make this refuse layer 28 to be formed with exposed portions serve lead 27 beyond the perforate, thereby on this lead that exposes 27, plant conducting element 29, be electrically connected to external device (ED) for this semiconductor device of sensing type as soldered ball.
By aforesaid method for making, the present invention discloses a kind of semiconductor device of sensing type again, comprising: printing opacity support plate 20; Metallic circuit 23 is formed at this printing opacity support plate 20 marginal surfaces; Sensor chip 25, have relative active surface and non-active surface, on this active surface, be formed with a sensing area 253 and a plurality of weld pads 254, and be provided with conductive projection 255, connect by this conductive projection 255 for this sensor chip 25 and place on this metallic circuit 23 in this weld pad 254; First dielectric layer 24 covers this sensor chip 25 sides; Second dielectric layer 26 is covered in this sensor chip 25 non-active surfaces; And lead 27, be formed on this first and second dielectric layer 24,26 and be electrically connected to this metallic circuit 23.
In addition, this semiconductor device of sensing type includes again: refuse layer 28, be formed on this second dielectric layer 26 and the lead 27, and make this refuse layer 28 to be formed with exposed portions serve lead 27 beyond the perforate; And plant conducting element 29 on this exposed electric wire 27.
Second embodiment
See also Fig. 3 A to Fig. 3 D, be the schematic diagram of semiconductor device of sensing type of the present invention and method for making second embodiment thereof.Be simplified illustration and graphic in addition, the same or analogous element of corresponding previous embodiment is represented with identical numbering.
Present embodiment and previous embodiment are roughly the same, and main difference is directly to form this sensor chip of covering and metallic circuit on the printing opacity support plate and be filled in the respectively dielectric layer between this sensor chip, omitting the manufacture process of second dielectric layer.
As shown in Figure 3A, the printing opacity support plate 20 that provides the surface to form many metallic traces 23 is to connect thinning and good sensor chip 25 on the metallic circuit 23 of putting and be electrically connected at this printing opacity support plate 20 by its conductive projection 255.
Shown in Fig. 3 B, directly on this printing opacity support plate 20, form the dielectric layer 24 that covers this sensor chip 25 and metallic circuit 23, save the step of grinding dielectric layer and being coated with second dielectric layer with previous embodiment.This dielectric layer 24 for example is that (Polyimide PI) waits macromolecular material (polymer), and fills and coat respectively 25 of this sensor chips for epoxy resin (Epoxy) or pi.
Shown in Fig. 3 C, utilize modes such as cutting, etching, electricity slurry, laser, to pass the groove 260 of this dielectric layer 24 in 25 formation of those sensor chips, use the metallic circuit 23 that exposes outside these printing opacity support plate 20 surfaces.
Shown in Fig. 3 D, (Redistribution Layer, RDL) technology with many leads 27 of formation on this dielectric layer 24, and make this lead 27 be electrically connected to the metallic circuit 23 that exposes outside this dielectric layer 24 to reshuffle layer by circuit.
After forming lead, can on this dielectric layer, be provided with again and refuse layer and conducting element in addition.Thereafter can be along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.
Therefore, semiconductor device of sensing type of the present invention and method for making thereof at first are to form many metallic traces on a printing opacity support plate, provide a plurality of weld pads to be provided with the sensor chip of conductive projection simultaneously, those sensor chips are thinning in advance and (chip probing after tested, CP) confirm as non-defective unit chip (Good Die), use and avoid prior art when wafer thinning, because of the chip section phase-splitting unsettled to the position, easily cause chip to damage and can't further thinning problem, simultaneously also can guarantee that employed chip is the non-defective unit chip, is electrically connected on the metallic circuit of this printing opacity support plate for those sensor chips by this conductive projection; Then corresponding respectively the filling between this sensor chip coats this sensor chip first dielectric layer on every side on this printing opacity support plate, and in this sensor chip, cover second dielectric layer on first dielectric layer, and be formed with the groove that exposes outside this printing opacity support plate surface metal circuit, on this second dielectric layer, to form the many leads that are electrically connected to this metallic circuit, also or can on this printing opacity support plate, directly form and cover this sensor chip and metallic circuit and be filled in the respectively dielectric layer between this sensor chip, omit the processing procedure of second dielectric layer, and be formed with the groove that exposes outside this printing opacity support plate surface metal circuit, on this dielectric layer, to form the many leads that are electrically connected to this metallic circuit; Be provided with again afterwards and refuse layer and conducting element, and along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.In the time of so can avoiding prior art to form semiconductor device of sensing type, sharply rupture, damage because of bit errors causes electrical bad connection of circuit and chip when wafer rear cuts, cause when repeatedly directly sputter forms circuit problems such as manufacture process cost increase because of angle in the junction.
The 3rd embodiment
See also Fig. 4, be the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 3rd embodiment thereof.Be simplified illustration and accompanying drawing in addition, the same or analogous element of corresponding previous embodiment is represented with identical numbering.
The semiconductor device of sensing type of present embodiment and method for making thereof and previous embodiment are roughly the same, set in advance ponding structure (dam) 201 around the sensing area that main difference is corresponding sensor chip on printing opacity support plate 20, connect by conductive projection 255 for this sensor chip 25 and to place on the metallic circuit 23, and fill out when covering first dielectric layer 24 sensing area 253 that is effectively controlled and avoids this first dielectric layer 24 to cover to this sensor chip 25 in 25 of adjacent sensor chips.
The 4th embodiment
See also Fig. 5, be the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 4th embodiment thereof.Be simplified illustration and accompanying drawing in addition, the same or analogous element of corresponding previous embodiment is represented with identical numbering.
The semiconductor device of sensing type of present embodiment and method for making thereof and previous embodiment are roughly the same, main difference is that the appropriate position forms just like pi (Polyimide on printing opacity support plate 20, PI) resilient coating 30, thereby on this resilient coating 30, form metallic circuit 23, use and reduce these metallic circuit 23 stresses.This resilient coating 30 sensing area 253 positions that these printing opacity support plate 20 corresponding sensor chips 25 should be avoided covering in the position are set.
The 5th embodiment
See also Fig. 6, be the schematic diagram of semiconductor device of sensing type of the present invention and method for making the 5th embodiment thereof.Be simplified illustration and accompanying drawing in addition, the same or analogous element of corresponding previous embodiment is represented with identical numbering.
The semiconductor device of sensing type of present embodiment and method for making thereof and previous embodiment are roughly the same, and main difference is to use and to strengthen semiconductor device intensity refusing the glutinous stiffener 31 that covers just like useless chip (dummy die) or glass on the layer 28.
The 6th embodiment
See also the schematic diagram that Fig. 7 A and Fig. 7 B are semiconductor device of sensing type of the present invention and method for making the 6th embodiment thereof.Be simplified illustration and accompanying drawing in addition, the same or analogous element of corresponding previous embodiment is represented with identical numbering.
The semiconductor device of sensing type of present embodiment and method for making thereof and previous embodiment are roughly the same, main difference is to be 25 fillings of sensor chip, first dielectric layer 24, and grind and this first dielectric layer 24 surfaces are flushed with these sensor chip 25 non-active surfaces, on the sensor chip 25 and first dielectric layer 24, to stick the stiffener 31 that covers just like useless chip (dummy die) or glass with viscose 26 ', to increase semiconductor device intensity, then on this stiffener 31, cover second dielectric layer 26, thereafter at second dielectric layer 26 of 25 of those sensor chips, stiffener 31 and first dielectric layer, 24 places form the groove that exposes outside the metallic circuit 23 on the printing opacity support plate 20, and form the lead 27 that is electrically connected to this metallic circuit 23 on this second dielectric layer 26.
Follow-up manufacture process is promptly as described in the previous embodiment, repeats no more in this.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention, and any those skilled in the art all can be under spirit of the present invention and category, and the foregoing description is modified and changed.Therefore, the scope of the present invention should be foundation as the scope with claims.
Claims (34)
1. the method for making of a semiconductor device of sensing type comprises:
One printing opacity support plate and a plurality of sensor chip are provided, wherein be formed with many metallic traces on this printing opacity support plate, respectively this sensor chip has relative active surface and non-moving face, this active surface is provided with a sensing area, be provided with a plurality of weld pads on every side, and on this weld pad, be formed with conductive projection, connect on the metallic circuit of putting and be electrically connected at this printing opacity support plate by this conductive projection for those sensor chips;
Correspondence is respectively filled first dielectric layer between this sensor chip on this printing opacity support plate, reaches metallic circuit around coating this sensor chip;
On this sensor chip and first dielectric layer, cover second dielectric layer, and first and second dielectric layer place formation groove between those sensor chips, to expose outside the metallic circuit on this printing opacity support plate;
On this second dielectric layer, form many leads, and make this lead be electrically connected to the metallic circuit that exposes outside this first and second dielectric layer; And
Along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.
2. the method for making of semiconductor device of sensing type according to claim 1 is included in again and covers one on this second dielectric layer and the lead and refuse layer, and makes this refuse layer to be formed with exposed portions serve lead beyond the perforate, thereby plants conducting element on this lead that exposes.
3. the method for making of semiconductor device of sensing type according to claim 2 is included in this again and refuses the glutinous stiffener that covers on the layer.
4. the method for making of semiconductor device of sensing type according to claim 1, wherein, the manufacture process of the metallic circuit on this printing opacity support plate comprises:
Form thin conductive layer in this printing opacity support plate;
On this thin conductive layer, cover resistance layer, and make this resistance layer be formed with opening to expose outside this part thin conductive layer;
By plating mode to form metallic circuit on the thin conductive layer in this opening; And
Remove this resistance layer and be thin conductive layer that this resistance layer covered.
5. the method for making of semiconductor device of sensing type according to claim 1, wherein, the manufacture process of this sensor chip comprises:
One wafer with a plurality of sensor chips is provided, and this wafer and sensor chip have relative active surface and non-active surface, and this sensor chip active surface is provided with a sensing area, are provided with a plurality of weld pads on every side;
After confirming this sensor chip respectively good corrupt after tested, put conductive projection on the weld pad of those good chips, to connect; And
The non-active surface of this wafer of thinning and cut single job is to form a plurality of sensor chips that are provided with conductive projection.
6. the method for making of semiconductor device of sensing type according to claim 1, wherein, this printing opacity support plate is divided a plurality of support plates unit, and these many metallic traces promptly are formed between adjacent support plate unit.
7. the method for making of semiconductor device of sensing type according to claim 1, wherein, correspondence is respectively filled first dielectric layer on this printing opacity support plate between this sensor chip, and grinds this first dielectric layer, uses making the non-active surface of this sensor chip and this first dielectric layer flush.
8. the method for making of semiconductor device of sensing type according to claim 1, wherein, this lead is reshuffled a layer technology by circuit and is formed on this second dielectric layer.
9. the method for making of semiconductor device of sensing type according to claim 1 wherein, has set in advance the ponding structure around the sensing area of corresponding sensor chip on this printing opacity support plate.
10. the method for making of semiconductor device of sensing type according to claim 1 wherein, is formed with resilient coating between this printing opacity support plate and this metallic circuit again.
11. the method for making of semiconductor device of sensing type according to claim 1, wherein, the glutinous stiffener that is covered with on this sensor chip and first dielectric layer, and form the groove that exposes outside the metallic circuit on the printing opacity support plate in second dielectric layer between those sensor chips, stiffener and the first dielectric layer place, on this second dielectric layer, to form the lead that is electrically connected to this metallic circuit.
12. a semiconductor device of sensing type comprises:
The printing opacity support plate;
Metallic circuit is formed at this printing opacity support plate marginal surface;
Sensor chip has relative active surface and non-active surface, is formed with a sensing area and a plurality of weld pad on this active surface, and is provided with conductive projection in this weld pad, connects by this conductive projection for this sensor chip to place on this metallic circuit;
First dielectric layer covers this sensor chip side;
Second dielectric layer is covered in the non-active surface of this sensor chip; And
Lead is formed on this first and second dielectric layer and is electrically connected to this metallic circuit.
13. semiconductor device of sensing type according to claim 12 wherein, is formed with resilient coating between this printing opacity support plate and this metallic circuit again.
14. semiconductor device of sensing type according to claim 12, wherein, this sensor chip is confirmed as good chip through thinning and test.
15. semiconductor device of sensing type according to claim 12, wherein, the non-active surface of this sensor chip and this first dielectric layer flush.
16. semiconductor device of sensing type according to claim 12 includes again: refuse layer, be formed on this second dielectric layer and the lead, and this is refused layer and is formed with exposed portions serve lead beyond the perforate; And conducting element, plant on this lead that exposes.
17. semiconductor device of sensing type according to claim 16, wherein, this refuses the glutinous stiffener that is covered with on the layer.
18. semiconductor device of sensing type according to claim 12, wherein, the glutinous stiffener that is covered with on this sensor chip and first dielectric layer.
19. semiconductor device of sensing type according to claim 12 wherein, is provided with the ponding structure around the sensing area of corresponding sensor chip on this printing opacity support plate.
20. the method for making of a semiconductor device of sensing type comprises:
One printing opacity support plate and a plurality of sensor chip are provided, wherein be formed with many metallic traces on this printing opacity support plate, respectively this sensor chip has relative active surface and non-moving face, this active surface is provided with a sensing area, be provided with a plurality of weld pads on every side, and on this weld pad, be formed with conductive projection, connect on the metallic circuit of putting and be electrically connected at this printing opacity support plate by this conductive projection for those sensor chips;
On this printing opacity support plate, form the dielectric layer that covers this sensor chip and metallic circuit;
Dielectric layer place between those sensor chips forms groove, to expose outside the metallic circuit on this printing opacity support plate;
On this dielectric layer, form many leads, and make this lead be electrically connected to the metallic circuit that exposes outside this dielectric layer; And
Along respectively cutting between this sensor chip, to form a plurality of semiconductor device of sensing type.
21. the method for making of semiconductor device of sensing type according to claim 20 is included in again on this dielectric layer and the lead and covers one and refuse layer, and makes this refuse layer to be formed with exposed portions serve lead beyond the perforate, thereby plants conducting element on this lead that exposes.
22. the method for making of semiconductor device of sensing type according to claim 21 is included in this again and refuses the glutinous stiffener that covers on the layer.
23. the method for making of semiconductor device of sensing type according to claim 20, wherein, the manufacture process of the metallic circuit on this printing opacity support plate comprises:
Form thin conductive layer in this printing opacity support plate;
On this thin conductive layer, cover resistance layer, and make this resistance layer be formed with opening to expose outside this part thin conductive layer;
By plating mode to form metallic circuit on the thin conductive layer in this opening; And
Remove this resistance layer and be thin conductive layer that this resistance layer covered.
24. the method for making of semiconductor device of sensing type according to claim 20, wherein, the manufacture process of this sensor chip comprises:
One wafer with a plurality of sensor chips is provided, and this wafer and sensor chip have relative active surface and non-active surface, and this sensor chip active surface is provided with a sensing area, are provided with a plurality of weld pads on every side;
After confirming this sensor chip respectively good corrupt after tested, put conductive projection on the weld pad of those good chips, to connect; And
The non-active surface of this wafer of thinning and cut single job is to form a plurality of sensor chips that are provided with conductive projection.
25. the method for making of semiconductor device of sensing type according to claim 20, wherein, this printing opacity support plate is divided a plurality of support plates unit, and these many metallic traces promptly are formed between adjacent support plate unit.
26. the method for making of semiconductor device of sensing type according to claim 20, wherein, this lead is reshuffled a layer technology by circuit and is formed on this dielectric layer.
27. the method for making of semiconductor device of sensing type according to claim 20 wherein, has set in advance the ponding structure around the sensing area of corresponding sensor chip on this printing opacity support plate.
28. the method for making of semiconductor device of sensing type according to claim 20 wherein, is formed with resilient coating between this printing opacity support plate and this metallic circuit again.
29. a semiconductor device of sensing type comprises:
The printing opacity support plate;
Metallic circuit is formed at this printing opacity support plate marginal surface;
Sensor chip has relative active surface and non-active surface, is formed with a sensing area and a plurality of weld pad on this active surface, and is provided with conductive projection in this weld pad, connects by this conductive projection for this sensor chip to place on this metallic circuit;
Dielectric layer covers this sensor chip side and the non-active surface of this sensor chip; And
Lead is formed on this dielectric layer and is electrically connected to this metallic circuit.
30. semiconductor device of sensing type according to claim 29 wherein, is formed with resilient coating between this printing opacity support plate and this metallic circuit again.
31. semiconductor device of sensing type according to claim 29, wherein, this sensor chip is confirmed as good chip through thinning and test.
32. semiconductor device of sensing type according to claim 29 includes again: refuse layer, be formed on this dielectric layer and the lead, and this is refused layer and is formed with exposed portions serve lead beyond the perforate; And conducting element, plant on this lead that exposes.
33. semiconductor device of sensing type according to claim 32, wherein, this refuses the glutinous stiffener that is covered with on the layer.
34. semiconductor device of sensing type according to claim 29 wherein, is provided with the ponding structure around the sensing area of corresponding sensor chip on this printing opacity support plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101074784A CN101308802A (en) | 2007-05-15 | 2007-05-15 | Semiconductor device of sensing type and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101074784A CN101308802A (en) | 2007-05-15 | 2007-05-15 | Semiconductor device of sensing type and its manufacture |
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| Publication Number | Publication Date |
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| CN101308802A true CN101308802A (en) | 2008-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101074784A Pending CN101308802A (en) | 2007-05-15 | 2007-05-15 | Semiconductor device of sensing type and its manufacture |
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| Country | Link |
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| CN (1) | CN101308802A (en) |
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| CN102446863A (en) * | 2010-10-06 | 2012-05-09 | 三星电子株式会社 | Semiconductor package member and method of manufacturing same |
| CN102593085A (en) * | 2011-01-10 | 2012-07-18 | 原相科技股份有限公司 | Chip packaging structure and chip packaging manufacturing process |
| CN102126697B (en) * | 2010-01-20 | 2013-09-25 | 矽品精密工业股份有限公司 | Encapsulating structure with micro electromechanical component and manufacturing method thereof |
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| US11105692B2 (en) | 2019-01-24 | 2021-08-31 | Coretronic Mems Corporation | Force sensor having first and second circuit board arrangements |
| CN111473894B (en) * | 2019-01-24 | 2021-12-14 | 中光电智能感测股份有限公司 | Force sensor |
| CN111029261A (en) * | 2019-11-22 | 2020-04-17 | 徐州顺意半导体科技有限公司 | Biological identification module and preparation method thereof |
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