CN101299054B - Measuring method of dye sensitization nano-film solar cell I-V characteristic and conversion efficiency characteristic - Google Patents
Measuring method of dye sensitization nano-film solar cell I-V characteristic and conversion efficiency characteristic Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 12
- 239000002120 nanofilm Substances 0.000 title claims description 28
- 206010070834 Sensitisation Diseases 0.000 title claims description 20
- 230000008313 sensitization Effects 0.000 title claims description 20
- 238000005259 measurement Methods 0.000 claims abstract description 34
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 claims description 12
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 7
- 229910052805 deuterium Inorganic materials 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 4
- 238000009795 derivation Methods 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 230000005477 standard model Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 230000001235 sensitizing effect Effects 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 26
- 239000000975 dye Substances 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- CKQBSDUWDZEMJL-UHFFFAOYSA-N [W].[Br] Chemical compound [W].[Br] CKQBSDUWDZEMJL-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
A method for measuring the I-V characteristic and conversion efficiency characteristic of a dye-sensitived solar cell comprises the following steps: 1) sensitizing the IPCE characteristic data of the solar cell with a hardware measurement dye same to the ordinary solar cell IPCE measurement system: regulating a mercury lamp and the like to emit to the monochromator and keeping the wavelength scale of the monochromator consistent with that of the mercury lamp; 2) introducing the light of the mercury lamp into the monochromator with a mode of parallel emitting, connecting the standard reference batteries to two ends of the ammeter; 3) measuring the current signal of the reference battery under the illumination of 200nm homogeneous light, wherein the range of the measurement wavelength is 200nm-1100nm; 4) changing the dye-sensitived solar cell S1, and collecting data under same condition for calculating; and 5) measuring the I-V characteristic data of the dye-sensitived solar cell S1: regulating an analog light source, and adopting a balance bridge for compensating the circuit; regulating the constant pressure source, measuring the current flowing over the sample under the bias voltages of different scanning velocities, and obtaining the I-V characteristic.
Description
Technical field
The present invention relates to semiconductor material application and field tests, the method for testing of especially a kind of dye-sensitized nano film solar battery conversion efficiency and IPCE characteristic.
Background technology
Energy problem is related to the sustainable development in the whole world, becomes the key factor of restriction social development.The brand-new dye-sensitized nano film solar battery achievement in research of (Dye-sensitized Solar Cell is called for short DSSC) had been reported in the M.Gratzel of the Institute of Technology such as Lausanne, SUI height professor laboratory in 1991, obtained extensive concern and attention in the world.With at present on market in the highest flight the expensive production cost of silicon solar cell and the preparation technology of complexity compare, the most attracting characteristics of dye-sensitized solar cells are its cheap starting material and relative simple manufacture craft, and stable performance, decay are lacked, have long-range application prospect, attracted the numerous scientists and the input of enterprise.
Dye-sensitized nano film solar battery is that the compound system that utilizes organic dye molecule to combine with semiconductor nano material carries out opto-electronic conversion to sun power, and it mainly is made up of following components: the light anode, organic dyestuff, the electrolyte that contain nano porous semiconductor film reach electrode.Because the internal physical and the chemical environment complexity of dye-sensitized nano film solar battery, electronics is accompanied by complicated course of reaction in transmittance process, while is based on the research requirement of DSSC, need to understand the photovoltaic current-voltage characteristic (being called for short the I-V characteristic) of such solar cell, it is the monochromatic photon of open-circuit voltage, short-circuit current, fill factor, curve factor, conversion efficiency and incident-electronics transformation efficiency characteristic (monochromatic incident photon-to-electron conversion efficiency represents with IPCE) etc.Therefore its parameter test method has very great Practical significance to research and raising dye-sensitized nano film solar battery transformation efficiency.
IPCE measurement standard of present solar cell (GB (State Standard of the People's Republic of China GB110091989_1111236414), ATSM (American Society for Testing and Materials standardE1021)) and method (Fig. 1) are unsuitable for the measurement of the IPCE characteristic of DSSC battery.The I-V that the I-V characteristic measurement method (Fig. 2) of equally, present solar cell also is unsuitable for the DSSC battery measures.Its reason is that traditional solar cell such as the relative silion cell of DSSC battery has significant capacitance characteristic, the interaction of the chopper frequencies in this capacitance characteristic and the IPCE measuring system at present and cause the distortion (Fig. 3) of the IPCE measured value of DSSC; The interaction of the impressed voltage sweep velocity in the I-V measuring system of this capacitance characteristic and present GB and ATSM then causes the distortion (Fig. 4) of the I-V measured value of DSSC battery.Above factor causes being applicable to the measuring method of present traditional solar cell and the parameter that dye-sensitized solar cells can not accurately be measured by system, i.e. open-circuit voltage, short-circuit current, fill factor, curve factor, conversion efficiency and IPCE etc.
The present invention is directed to dye-sensitized nano film solar battery solar cell measurement method of parameters and system are improved, proposed to be adapted to the I-V measurement of dye-sensitized solar cells and measuring method and the system of IPCE.The present invention has eliminated that DSSC battery and traditional solar cell measuring system interact and the distortion of the measured value that causes, thereby reaches the purpose that reduces signal attenuation and improve measuring accuracy, makes signal errors reduce 10-100 doubly.Therefore than traditional measurement method, the present invention has improved the accuracy of signal intensity and battery parameter measurement, and can obtain the homogeneity parameter of sample, provide the basis of studying to semiconductor porous film light anode and entire cell system, the researchist is carried out the process modification of battery, very big directive significance is arranged.
Summary of the invention
The present invention seeks to: the measuring method that a kind of dye-sensitized nano film solar battery I-V characteristic and photoelectric transformation efficiency IPCE characteristic are provided, overcome traditional solar cell measuring method and can not accurately measure the technical deficiency of dye-sensitized solar cells, improve signal intensity and precision, more comprehensively dye-sensitized solar cells parameter information is provided, in order to instructing preparation technology's improvement, and the research of dyestuff.
Technical scheme of the present invention is, is used to detect the method for the various parameters of dye sensitization nano-film solar cell, comprises the steps:
1) use the identical hardware of common solar cell IPCE test macro to measure the IPCE performance data measured value of dye-sensitized solar cells: the size of fixed dye sensitization nano-film solar cell light-receiving area, regulate mercury lamp, the parallel monochromator that incides of Halogen lamp LED with deuterium lamp, utilize known standard wavelength spectral line 253.65,313.20,365.48,404.72,435.84,253.65 546.07nm is consistent the monochromator wave length calibration with it;
2) mercury lamp, Halogen lamp LED and deuterium lamp are entered monochromator in the mode of parallel incident, behind the grating beam splitting by monochromator, the standard reference battery is positioned on the standard model frame, the light-receiving area on fixed sample surface is 16 π mm
2, the standard reference battery is connected to galvanometric two ends;
3) measure the current signal of reference cell (silion cell) under the irradiation of 200nm monochromatic light, make the monochromatic light of the outgoing of monochromator become 210nm, duplicate measurements, promptly every the 10nm once sampling, the measurement wavelength coverage is 200nm～1100nm;
4) change dye sensitization nano-film solar cell S1, image data under similarity condition, and utilize program to calculate single wavelength external quantum efficiency, computing formula is
Q
λ＝Q
ref，λ·J
λ/J
ref，λ
Q
λ, Q
Ref, λThe external quantum efficiency of representing dye sensitization nano-film solar cell and reference cell respectively;
J
λ, J
Ref, λThe current value of representing dye sensitization nano-film solar cell and reference cell respectively;
Deriving according to the circuit under equivalent electrical circuit, the IPCE measurement situation and Kirchhoff's law contains the IPCE functional relation of chopper frequencies, battery capacitor,
Wherein, I (t): sample output current value; R
s: battery equivalent electrical circuit resistance in series; R: battery equivalent electrical circuit resistance parameter; C: battery equivalent circuit capacitance parameter; T: chopper is chopped the light path time off; t
1: chopper is communicated with the light path time;
When 5) the I-V performance data of dye-sensitized solar cells is measured:
5-1), regulate analog light source, directly impinge perpendicularly on the surface of sample, the nano-film solar cell of fixed dye sensitization simultaneously light-receiving area, metering circuit adopts the balanced bridge compensating circuit;
5-2). regulate constant pressure source, the electric current that sample flow is crossed under the bias voltage of measurement different scanning speed obtains voltage-to-current measured value D
0
5-3) .. is according to equivalent electrical circuit and Kirchhoff's law derivation I-V functional relation.
Wherein, I: sample output current value; I
Ph: the photogenerated current source; I
0: the diode initial current; K: the graceful constant now of bohr; T: temperature; N: the diode ideal is drawn certainly; Q: elementary charge; V (t): applying bias; R
s: battery equivalent electrical circuit resistance in series; R
Sh: battery equivalent electrical circuit parallel resistance; C
Sh: battery equivalent electrical circuit shunt capacitance.
The present invention can also be according to measured result D
0With the I-V functional relation, with the numerical value of each equivalent circuit parameter in the Newton method computation optimization I-V functional expression.According to the equivalent circuit parameter numerical value of step 5 and the relational expression of step 3, deriving and adding sweep velocity is 0 o'clock this dye-sensitized solar cells I-V characteristic value D
1, and D
1Additional power source scan velocity V when average variance is no more than n%
2And the I-V characteristic value D of this speed correspondence
2(n% is the measuring accuracy that system allows).Also the sweep velocity of additional power source can be transferred to V
2, directly measure the I-V intrinsic numeric D with n% precision of this battery
2This value is exactly that the I-V value (as Fig. 6 .b) of this DSSC battery of non-scanning speed influence is accurately passed through the open-circuit voltage V that program calculates sample
Oc, short-circuit current J.Data acquisition and calculating are computer program control.
The wave band of measured wavelength is 200nm-1100nm.Described reference cell is a silion cell.
Use and the present identical hardware system of solar cell IPCE test macro, measurement is under a certain frequency of chopper or the data value of the IPCE characteristic of the dye-sensitized solar cells under several frequencies.According to the performance data measured value of the relational expression and the step 5) of step 4), derive the accurately IPCE intrinsic numeric of this dye-sensitized solar cells under the influence of no chopper frequencies.
Under identical monochromatic illumination condition, measure the standard reference battery of known parameters and the short-circuit current signal of experiment dye sensitization nano-film solar cell, and the two is compared calculating, obtain testing the efficient of dye sensitization nano-film solar cell; The method that the battery short circuit current signal is measured is a feedback current meter method;
According to metering circuit and the Kirchhoff's law that equivalent electrical circuit, photoelectricity are rotated efficient IPCE, derive the functional relation of capacitance characteristic, impressed voltage source sweep velocity and the cell I-V characteristic of dye-sensitized solar cells; Derive the functional relation of the chopper frequencies and the battery IPCE characteristic of dye-sensitized solar cells measuring system; Quantum efficiency Q
λWith short-circuit current J
λRatio equals standard reference battery quantum efficiency Q
Ref, λWith its short-circuit current J
Ref, λRatio.Derive the intrinsic numeric of I-V accurately after the isoparametric numerical value of capacitance characteristic of this dye-sensitized solar cells, best additional power source sweep velocity and elimination power supply sweep velocity and battery capacitor characteristic interact, derive the accurately IPCE intrinsic numeric of this dye-sensitized solar cells under the influence of no chopper frequencies.Also can under this best additional power source sweep velocity, measure the intrinsic numeric of I-V accurately of this battery.
Mechanism of the present invention is: according to equivalent electrical circuit and Kirchhoff's law, from measure numerical value, eliminate the chopper frequencies of measuring system, the distortion that the additional power source sweep velocity causes measurement result, can measure the I-V intrinsic numeric and the IPCE intrinsic numeric of dye-sensitized solar cells simply, exactly.
Characteristics of the present invention are: eliminated the measurement distortion of system, can obtain the I-V characteristic and the IPCE performance data of dye-sensitized solar cells accurately, had the measurement characteristic of accurate.Test macro can be controlled automatically by computer program among the present invention, convenient and swift, artificial calculated amount and workload have been alleviated, improved density measurement widely, obtain the micro-parameter of reliable dye-sensitized solar cells, in order to instructing preparation technology's improvement, the research of dyestuff has that cost is low, function is many, accuracy is high, a robotization, practical characteristics.Tradition solar cell test macro can obtain the I-V characteristic and the IPCE performance data of dye-sensitized solar cells accurately to Measurement and Data Processing by the present invention in the situation that does not increase hardware, reduces the cost of dye-sensitized solar cells parameter measurement equipment.
Description of drawings
The solar cell IPCE measurement mechanism block scheme that Fig. 1 is traditional
The solar cell I-V that Fig. 2 is traditional
The solar cell IPCE measurement mechanism that Fig. 3 is traditional can not accurately be measured the DSSC battery. and the IPCE (shown in the shallow line) of silicon solar cell can accurately measure in this system, but the chopper of this system causes the IPCE measured value distortion (shown in the dark line) of DSSC.
The solar cell I-V measurement mechanism that Fig. 4 is traditional can not accurately be measured the DSSC battery
A. the I-V of silicon solar cell can accurately measure in this system, and the I-V measured value of the silion cell under the different additional power source sweep velocitys does not have marked change.
B. different additional power source sweep velocitys cause this system to record the remarkable distortion of I-V measured value of DSSC battery.
Fig. 5 does not have the IPCE value of this DSSC battery of chopper influence accurately
Figure a. adds the scan bias voltage synoptic diagram among Fig. 6.T
d: the sampling delay time; T
m: sample integral time; Δ V is a voltage step size.Figure b is the I-V value of this DSSC battery of non-scanning speed influence accurately.
Embodiment
The invention will be further described below in conjunction with example;
One, the measurement of dye-sensitized solar cells IPCE characteristic
Adopt the Oriel analog light source, Halogen lamp LED and deuterium lamp are respectively as light source, the utilization Chinese light monochromator of standing upright, the Model SR830 DSP of U.S. Stanford instrument company lock is to amplifier, SR830 chopper, and computing machine is measured the dye-sensitized nano film solar battery sample at the IPCE numerical value (measuring system such as Fig. 1) of ultraviolet to the visible light wave range scope according to the method for GB (State Standard of the People's Republic of China GB110091989 1111236414), ATSM (American Societyfor Testing and Materials standard E1021).The dye-sensitized solar cells sample for preparing with two distinct methods during measurement: the light anode of sample S1 adopts the silk screen print method preparation; The light anode of sample S2 adopts the cladding process preparation.Test is carried out in following condition: light source is the bromine tungsten filament lamp of Zolix, and deuterium lamp, and Oriel analog light source, probe temperature are 25 ± 2 ℃.The standard reference battery is Newport 818UV-ST probe silion cell.IPCE measuring method of the present invention specifically comprises the steps:
1. regulate the parallel monochromator that incides of mercury lamp, utilize known standard wavelength spectral line 253.65,313.20,365.48,404.72,435.84,253.65,546.07nm is consistent the monochromator wave length calibration with it.
2. Halogen lamp LED and deuterium lamp are entered monochromator in the mode of parallel incident, behind the grating beam splitting by monochromator, the standard reference battery is positioned on the standard model frame, the light-receiving area on fixed sample surface is 16 π mm
2, the standard reference battery is connected to galvanometric two ends.
3. the current signal of measurement standard reference cell (silion cell) under the irradiation of 200nm monochromatic light makes the monochromatic light of the outgoing of monochromator become 210nm, duplicate measurements, and promptly every the 10nm once sampling, the measurement wavelength coverage is 200nm～1100nm,
4. change laboratory sample S1, under similarity condition, take data.And utilize program to calculate single wavelength external quantum efficiency.Computing formula is
Q
λ＝Q
ref，λ·J
λ?/J
ref，λ
5. deriving according to the circuit under equivalent electrical circuit, the IPCE measurement situation and Kirchhoff's law contains the IPCE functional relation of chopper frequencies, battery capacitor,
Wherein, I (t): sample output current value; R
s: battery equivalent electrical circuit resistance in series; R: battery equivalent electrical circuit resistance parameter; C: battery equivalent circuit capacitance parameter; T: chopper is chopped the light path time off; t
1: chopper is communicated with the light path time.
According to measured result and IPCE functional relation, with the numerical value of each equivalent circuit parameter in the Newton method computation optimization functional expression.
6. according to the equivalent electrical circuit circuit parameter, can calculate chopper frequencies is the IPCE value of 0 o'clock this dye-sensitized solar cells, and this value is exactly not have the IPCE value (as Fig. 5) of this DSSC battery of chopper influence accurately.
Two, the measurement of dye-sensitized solar cells I-V characteristic
Adopt Oriel company analog light source as light source, the little current source measuring instrument that U.S. Keithley company produces is measured the dye sensitization nano-film solar cell sample at I-V characteristic (measuring system such as Fig. 2).The DSSC sample for preparing with two distinct methods during measurement: the light anode of sample S1 adopts the silk screen print method preparation; The light anode of sample S2 adopts the cladding process preparation.Test is carried out in following condition: Oriel analog light source, probe temperature are 25 ± 2 ℃.The standard reference battery is Newport 818UV-ST probe silion cell.
I-V characteristic measurement method of the present invention specifically comprises the steps:
1, regulate analog light source, directly impinge perpendicularly on the surface of sample, the size of fixed dye sensitization nano-film solar cell light-receiving area is 1cm simultaneously
2, build the balanced bridge compensating circuit.
2. adjusting constant pressure source is measured the electric current that sample flow is crossed under the bias voltage of different scanning speed, obtains voltage-to-current measured value D
0
3.. according to equivalent electrical circuit and Kirchhoff's law derivation I-V functional relation.
Wherein, I: sample output current value; I
Ph: the photogenerated current source; I
0: the diode initial current; K: the graceful constant now of bohr; T: temperature; N: the diode ideal is drawn certainly; Q: elementary charge; V (t): applying bias; R
s: battery equivalent electrical circuit resistance in series; R
Sh: battery equivalent electrical circuit parallel resistance; C
Sh: battery equivalent electrical circuit shunt capacitance.
4. according to measured result D
0With the I-V functional relation, with the numerical value of each equivalent circuit parameter in the Newton method computation optimization I-V functional expression.
5, according to the equivalent circuit parameter numerical value of step 4 and the relational expression of step 3, deriving and adding sweep velocity is 0 o'clock this dye-sensitized solar cells I-V characteristic value D
1, and D
1Additional power source scan velocity V when average variance is no more than n%
2And the I-V characteristic value D of this speed correspondence
2(n% is the measuring accuracy that system allows).Also the sweep velocity of additional power source can be transferred to V
2, directly measure the I-V intrinsic numeric D with n% precision of this battery
2This value is exactly the I-V value (as Fig. 6 .b) of this DSSC battery of non-scanning speed influence accurately
Calculate the open-circuit voltage V of sample through program
Oc, short-circuit current J
ScAnd parameters such as fill factor, curve factor FF and efficiency eta.(S1：V
oc＝550mV，J
sc＝1.45mA，FF＝58％，η＝5.11％；)
Claims (3)
1. the measuring method of dye sensitization nano-film solar cell I-V characteristic and conversion efficiency characteristic is characterized in that comprising the steps:
1) use the identical hardware of common solar cell IPCE test macro to measure the IPCE performance data measured value of dye-sensitized solar cells: the size of fixed dye sensitization nano-film solar cell light-receiving area, regulate mercury lamp, the parallel monochromator that incides of Halogen lamp LED with deuterium lamp, utilize known standard wavelength spectral line 253.65,313.20,365.48,404.72,435.84,253.65 546.07nm is consistent the monochromator wave length calibration with it;
2) mercury lamp, Halogen lamp LED and deuterium lamp are entered monochromator in the mode of parallel incident, behind the grating beam splitting by monochromator, the standard reference battery is positioned on the standard model frame, the light-receiving area on fixed sample surface is 16 π mm
2, the standard reference battery is connected to galvanometric two ends;
3) current signal of measurement standard reference cell under the irradiation of 200nm monochromatic light makes the monochromatic light of the outgoing of monochromator become 210nm, duplicate measurements, and promptly every the 10nm once sampling, the measurement wavelength coverage is 200nm～1100nm;
4) change dye sensitization nano-film solar cell S1, image data under similarity condition, and utilize program to calculate single wavelength external quantum efficiency, computing formula is
Q
λ＝Q
ref，λ·J
λ/J
ref，λ
Q
λ, Q
Ref, λThe external quantum efficiency of representing dye sensitization nano-film solar cell and standard reference battery respectively;
J
λ, J
Ref, λThe current value of representing dye sensitization nano-film solar cell and standard reference battery respectively;
Deriving according to the circuit under equivalent electrical circuit, the IPCE measurement situation and Kirchhoff's law contains the IPCE functional relation of chopper frequencies, battery capacitor,
Wherein, I (t): sample output current value; R
s: battery equivalent electrical circuit resistance in series; R: battery equivalent electrical circuit resistance parameter; C: battery equivalent circuit capacitance parameter; T: chopper is chopped the light path time off; t
1: chopper is communicated with the light path time;
When 5) the I-V performance data of dye-sensitized solar cells is measured:
5-1), regulate analog light source, directly impinge perpendicularly on the surface of sample, the nano-film solar cell of fixed dye sensitization simultaneously light-receiving area, metering circuit adopts the balanced bridge compensating circuit;
5-2). regulate constant pressure source, the electric current that sample flow is crossed under the bias voltage of measurement different scanning speed obtains voltage-to-current measured value D
0
5-3). according to equivalent electrical circuit and Kirchhoff's law derivation I-V functional relation
Wherein, I: sample output current value; I
Ph: the photogenerated current source; I
0: the diode initial current; K: the graceful constant now of bohr; T: temperature; N: diode ideal factor; Q: elementary charge; V (t): applying bias; R
s: battery equivalent electrical circuit resistance in series; R
Sh: battery equivalent electrical circuit parallel resistance; C
Sh: battery equivalent electrical circuit shunt capacitance.
2. the measuring method of dye sensitization nano-film solar cell I-V characteristic according to claim 1 and conversion efficiency characteristic is characterized in that the wave band of the measurement wavelength that adopts is 200nm-1100nm.
3. the measuring method of dye sensitization nano-film solar cell I-V characteristic according to claim 1 and conversion efficiency characteristic is characterized in that described standard reference battery is a silion cell.
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| CN101769983B (en) * | 2008-12-31 | 2012-02-15 | 中国科学院物理研究所 | Solar battery IPCE curve measuring device and method |
| KR101538133B1 (en) * | 2009-03-10 | 2015-07-22 | 주식회사 동진쎄미켐 | Dye solution monitoring device for dye sensitized solar cell and dye solution control device |
| CN101694511B (en) * | 2009-10-23 | 2011-06-22 | 南京大学 | Method for absolutely measuring external quatum efficiency of solar batteries via direct current method |
| CN101881807A (en) * | 2010-06-28 | 2010-11-10 | 常州亿晶光电科技有限公司 | Alternating-current measuring device for quantum efficiency of solar cell |
| CN101871992A (en) * | 2010-06-28 | 2010-10-27 | 常州亿晶光电科技有限公司 | Alternating current measuring device for quantum efficiency of solar battery and using method thereof |
| CN102621073B (en) * | 2012-03-02 | 2013-08-14 | 北京卓立汉光仪器有限公司 | Spectral response value measurement system and method for solar cell |
| CN102788944A (en) * | 2012-07-06 | 2012-11-21 | 南京大学 | Quick test method of solar battery electric performance and capable of removing internal capacitor effect |
| DE102013226885A1 (en) * | 2013-06-03 | 2014-12-04 | Kyoshin Electric Co., Ltd | I-U characteristic measuring method and I-U characteristic measuring device for solar cells as well as program for I-U characteristic measuring device |
| CN103605029B (en) * | 2013-11-29 | 2015-11-18 | 天津理工大学 | A kind of measuring method of DSSC electron lifetime distribution |
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| CN1331488A (en) * | 2000-07-04 | 2002-01-16 | 佳能株式会社 | Method and device for measuring photoelectric translating characteristic |
| CN1341863A (en) * | 2000-07-05 | 2002-03-27 | 佳能株式会社 | Photoelectric conversion characteristics testing method and equipment for photoelectric switching equipment |
| CN1424573A (en) * | 2003-01-07 | 2003-06-18 | 上海交通大学 | Test method for polycrystalline silicon solar battery converting efficiency |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1331488A (en) * | 2000-07-04 | 2002-01-16 | 佳能株式会社 | Method and device for measuring photoelectric translating characteristic |
| CN1341863A (en) * | 2000-07-05 | 2002-03-27 | 佳能株式会社 | Photoelectric conversion characteristics testing method and equipment for photoelectric switching equipment |
| CN1424573A (en) * | 2003-01-07 | 2003-06-18 | 上海交通大学 | Test method for polycrystalline silicon solar battery converting efficiency |
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