CN101286616A - 2-micron all-solid-state pulse ring laser - Google Patents
2-micron all-solid-state pulse ring laser Download PDFInfo
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- CN101286616A CN101286616A CNA2008100383291A CN200810038329A CN101286616A CN 101286616 A CN101286616 A CN 101286616A CN A2008100383291 A CNA2008100383291 A CN A2008100383291A CN 200810038329 A CN200810038329 A CN 200810038329A CN 101286616 A CN101286616 A CN 101286616A
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- 238000005086 pumping Methods 0.000 claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 239000007787 solid Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 4
- WQNUBQUNDDGZTB-UHFFFAOYSA-N [Ho].[Tm] Chemical compound [Ho].[Tm] WQNUBQUNDDGZTB-UHFFFAOYSA-N 0.000 claims description 3
- 241000931526 Acer campestre Species 0.000 claims description 2
- WVCSLTZAWJBKBL-UHFFFAOYSA-J lithium;lutetium(3+);tetrafluoride Chemical compound [Li+].[F-].[F-].[F-].[F-].[Lu+3] WVCSLTZAWJBKBL-UHFFFAOYSA-J 0.000 claims description 2
- 230000001427 coherent effect Effects 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000003491 array Methods 0.000 abstract 2
- 229910052689 Holmium Inorganic materials 0.000 description 8
- 229910052775 Thulium Inorganic materials 0.000 description 7
- -1 Holmium ion Chemical class 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HIQSCMNRKRMPJT-UHFFFAOYSA-J lithium;yttrium(3+);tetrafluoride Chemical compound [Li+].[F-].[F-].[F-].[F-].[Y+3] HIQSCMNRKRMPJT-UHFFFAOYSA-J 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
A2 mu m all-solid-state pulse laser is characterized by comprising a pumping head, an annular laser resonant cavity, an acousto-optic Q switch and a seed laser injection system, wherein the annular laser resonant cavity is formed by an input-output coupling mirror, a total reflection plane mirror, a first concave mirror, a second concave mirror and the input-output coupling mirror to form an annular resonant cavity with an 8-shaped light path, the acousto-optic Q switch is positioned at the beam waist of the annular laser resonant cavity, seed laser emitted by the seed laser injection system is injected into the annular laser resonant cavity through the input-output coupling mirror, the pumping head is formed by a pumping source, a cylindrical lens and a laser rod, the laser rod is arranged in the light path in the annular laser resonant cavity, the pumping source comprises a plurality of groups of laser diode arrays, and each group of laser diode arrays are arranged along the length direction of the laser rod and are distributed around the laser rod in a central symmetry mode through the respective cylindrical lens. The laser can be used for a coherent radar detection light source.
Description
Technical field
The present invention relates to all solid state laser, particularly a kind of 2 mu m complete solid state pulse lasers.
Background technology
The laser of 2 mu m wavebands in recent years, causes people's very big interest gradually owing to have characteristics such as good atmosphere penetrability and eye-safe.This laser is considered to the eye-safe Long Range Detecting and Ranging, and as the perfect light source of systems such as coherent Doppler wind-observation radar, differential absorption lidar, and it still obtains the desirable pumping source of 3-5 mu m waveband optical parametric oscillator laser output.
The particularly application on the coherent Doppler wind-observation radar, 2 μ m pulse coherence detection radars can provide carbon dioxide vertically profiling and tropospheric wind field profile accurately.In this radar system, key will have one reliably, high-octane 2 μ m laser emitting sources.And the coherent detection laser radar is progressively from the basis of ground radar, and to spatial development, spaceborne coherent radar system requires higher (reaching single pulse energy joule magnitude) to laser energy.The research of 2 μ m laser, various countries extensively carry out.But obtain high-octane laser pulse output,, generally adopt the solid state laser gain medium to be easier to realize according to existing result of study.1998, U.S. NASALangley research center adopted the holmium thulium to mix lithium yttrium fluoride (Ho:Tm:YLF) crystal altogether as gain media, obtains when repetition rate is 6Hz, and single pulse energy is the output of the 2.05 μ m laser of 125mJ.2004, the mode of utilizing conduction to cool off obtained the energy output of 2 μ m Q-switch laser 400mJ.2006, adopt main oscillations pulse amplification system (MOPA), comprise an oscillator stage, a preamplifier state and two formal amplifying stages obtain the laser output of single pulse energy 1J.Certainly, also there is the research of carrying out 2 μ m Solid State Lasers in other countries, do not enumerate one by one here.
Summary of the invention
The objective of the invention is provides a kind of 2 mu m complete solid state pulse lasers in order to obtain the needed light source of coherent Doppler wind-observation radar, obtains 2 μ m laser eye-safe, big pulse energy and single mode narrow linewidth.
The technology of the present invention solution is:
A kind of 2 mu m complete solid state pulse lasers, its characteristics are by pump head, loop laser resonance cavity, acoustooptic Q-switching and seed laser injected system constitute, described loop laser resonance cavity is by the input and output coupling mirror, fully-reflected plane mirror, first concave mirror, second concave mirror to described input and output coupling mirror constitutes the ring resonator of 8 font light paths, described acoustooptic Q-switching is positioned at the place with a tight waist of described loop laser resonance cavity, the seed laser that described seed laser injected system is sent injects described loop laser resonance cavity by described input and output coupling mirror, described pump head is by pumping source, post lens and laser bar are formed, described laser bar places the light path in the described loop laser resonance cavity, described pumping source is to comprise many group diode laser matrixs, and every group of diode laser matrix arranged through separately post lens around the distribution that is centrosymmetric of described laser bar along the length direction of described laser bar.
Described pumping source is that centre wavelength is the 792nm diode laser matrix.
Described laser bar is that (Tm, Ho:LuLiF) crystal is made by two lithium lutetium fluorides of mixing the thulium holmium.
The optical maser wavelength of described seed laser injected system output is 2053nm, live width 2MHz.
Grow up in 2 meters in the chamber of described loop laser resonance cavity.
The present invention has the following advantages:
1, gain medium adopts Tm, Ho:LuLiF crystal.It belongs to accurate four-level structure.This gain medium is mainly mixed thulium, the medium of holmium.Thulium ion (Tm
3+) be good photoactive substance in the near infrared region, but stimulated emission cross section is less; Holmium ion (Ho
3+) stimulated emission cross section bigger, but therefore a little less than near the absorption to the pump light 792nm, adopt and holmium ion is carried out the two of sensitization mix crystal as gain medium.LuLiF belongs to tetragonal crystal system, and the nonlinear refraction coefficient of this crystal is little, is very suitable for rare earth cation (as Tm
3+, Ho
3+) doping; And Tm, the upper laser level life-span of Ho:LuLiF laser approximately is 50 times of Nd:YAG upper laser level life-span (230us) greater than 10ms, this shows that LuLiF matrix has higher optical storage capacity; Under same pumping condition, Tm, Ho:LuLiF laser sloep efficiency efficient is higher relatively, so we select Tm for use, and Ho:LuLiF crystal laser gain media is to obtain the output of the high-energy 2um pulse laser under the low-repetition-frequency.
2, adopt the profile pump structure, diode laser matrix is arranged along the length direction of laser bar, and the pumping direction is perpendicular to the direction of propagation of laser emission.This pump mode, the laser energy output that easier acquisition is high is because can use more diode laser matrix around laser bar.Diode laser matrix produces connatural pump distribution around the pumping configuration that laser crystal is symmetrically distributed to the laser bar that is in the center, helps to improve the utilance of this accurate four-level gain media, extracts TEM efficiently
00The mould energy.Employing odd number pump diode array can reduce the mutual irradiation between the diode, prevents the damage of diode.
3, cavity structure adopts four mirror annular chambers.The capable ripple running of annular chamber can overcome effects of spatial, helps to obtain single longitudinal mode laser; Though annular chamber complex structure, but owing to be bidirectional movement, from the output of outgoing mirror end two-way laser is arranged, made things convenient for the seed injection on the contrary, seed can be introduced from the outgoing mirror end, outgoing mirror has certain transmitance to laser emission, can reduce the loss to the seed light energy, so also can realize the unidirectional running of annular chamber simultaneously.By design, can form and girdle the waist in addition, be convenient in the chamber, insert Q-switch in needed position to the chamber type.
Description of drawings
Fig. 1 is the The general frame of the preferred embodiment of laser of the present invention.
Fig. 2 is the used Tm of the embodiment of the invention, Ho:LuLiF pump head end view.
Fig. 3 is embodiment of the invention ring resonator and light path schematic diagram.
Embodiment
The present invention is described further below in conjunction with accompanying drawing and embodiment.
See also Fig. 1, Fig. 2, Fig. 3 earlier, Fig. 1 is the The general frame of the preferred embodiment of laser of the present invention, and Fig. 2 is the used Tm of the embodiment of the invention, and Ho:LuLiF pump head end view, Fig. 3 are embodiment of the invention ring resonator and light path schematic diagram.As seen from the figure, the present invention's 2 mu m complete solid state pulse lasers, by pump head 1, loop laser resonance cavity 2, acoustooptic Q-switching 3 and seed laser injected system 4 constitute, described loop laser resonance cavity 2 is referring to Fig. 3, by input and output coupling mirror 201, fully-reflected plane mirror 202, first concave mirror 203, second concave mirror 204 constitutes the ring resonator of 8 font light paths to described input and output coupling mirror 201, described acoustooptic Q-switching 3 is positioned at the place with a tight waist of described loop laser resonance cavity 2, the seed laser that described seed laser injected system 4 is sent injects described loop laser resonance cavity 2 by described input and output coupling mirror 201, described pump head 1, referring to Fig. 2, by pumping source 101, post lens 102 and laser bar 103 are formed, described laser bar 103 places the light path in the described loop laser resonance cavity 2, described pumping source 101 is to comprise many group diode laser matrixs, and every group of diode laser matrix arranged through separately post lens 102 around the distribution that is centrosymmetric of described laser bar 103 along the length direction of described laser bar 103.Pumping source 101 described in the present embodiment is to comprise three groups of diode laser matrixs, three post lens 102, diode laser matrix is arranged through separately post lens 102 around the distribution that is centrosymmetric of described laser bar 103 along the length direction of described laser bar 103.
Three groups of laser diode array pumping sources 101 are symmetrically distributed around laser bar 103, and through 102 shapings of post lens, to Tm, Ho:LuLiF laser bar 103 carries out profile pump; Tm, Ho:LuLiF laserresonator 2 adopts four mirror ring cavity structures, and as shown in Figure 3, wherein (203), (204) two speculums are curved reflector, at formed place with a tight waist, insert acoustooptic Q-switching 3, and compress improves the output laser peak power; Add exocoel seed laser injected system 4, the live width of control output laser.
Be the concrete parameter of this embodiment below:
Pumping source is with three groups of diode laser matrixs, centre wavelength 792nm, every group of diode laser matrix maximum output energy 1.5J, pulsewidth 1ms, repetition rate 1Hz.Laser bar is of a size of the Tm of Φ 4 * 20, Ho:LuLiF crystal, Tm
3+, Ho
3+Doping content be respectively 5% and 0.5%, crystal is to the absorption coefficient=3.23cm of pump light
-1Pump light sees through 102 couplings of post set of lenses, profile pump laser crystal 103.Resonant cavity adopts four mirror annular chambers, curved surface total reflective mirror 203 and curved surface total reflective mirror 204 that 202, two radius of curvature of a plane total reflective mirror are 4m, and 201 pairs of laser transmittances of output coupling mirror are 20%, total chamber is long to be 2m.Acoustooptic Q-switching 3 inserts in the resonant cavity 2, and girdling the waist herein is 1.06mm.When injecting energy 3J, the output laser pulse energy is about 120mJ, and light-light conversion efficiency is 4%.Use 2053nm single longitudinal mode laser 4 to carry out injection locking, the control live width as the seed laser source.
In sum, the present invention can realize 2 μ m laser high impulse energy, and the output of narrow linewidth is particularly suitable for the requirement with coherent Doppler radar emission light source, surveying wind, surveys CO
2Deng having wide practical use in the aeromerric moasurenont.
Claims (5)
1, a kind of 2 mu m complete solid state pulse lasers, it is characterized in that by pump head (1), loop laser resonance cavity (2), acoustooptic Q-switching (3) and seed laser injected system (4) constitute, described loop laser resonance cavity (2) is by input and output coupling mirror (201), fully-reflected plane mirror (202), first concave mirror (203), second concave mirror (204) constitutes the ring resonator of 8 font light paths to described input and output coupling mirror (201), described acoustooptic Q-switching (3) is positioned at the place with a tight waist of described loop laser resonance cavity (2), the seed laser that described seed laser injected system (4) is sent injects described loop laser resonance cavity (2) by described input and output coupling mirror (201), described pump head (1) is by pumping source (101), post lens (102) and laser bar (103) are formed, described laser bar (103) places the light path in the described loop laser resonance cavity (2), described pumping source (101) is to comprise many group diode laser matrixs, and every group of diode laser matrix arranged through separately post lens (102) around described laser bar (103) distribution that is centrosymmetric along the length direction of described laser bar (103).
2,2 mu m complete solid state pulse lasers according to claim 1 is characterized in that described pumping source (101) is that centre wavelength is the 792nm diode laser matrix.
3,2 mu m complete solid state pulse lasers according to claim 1 is characterized in that described laser bar (103) is to be made by two lithium lutetium fluoride crystals of mixing the thulium holmium.
4,2 mu m complete solid state pulse lasers according to claim 1 is characterized in that the optical maser wavelength of described seed laser injected system (4) output is 2053nm, live width 2MHz.
5,2 mu m complete solid state pulse lasers according to claim 1 is characterized in that growing up in 2 meters in the chamber of described loop laser resonance cavity (2).
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CNA2008100383291A CN101286616A (en) | 2008-05-30 | 2008-05-30 | 2-micron all-solid-state pulse ring laser |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102227045A (en) * | 2011-05-13 | 2011-10-26 | 中国科学院上海光学精密机械研究所 | All-solid-state 2-micron single-frequency laser of laser diode pump |
CN102780152A (en) * | 2012-06-29 | 2012-11-14 | 中国电子科技集团公司第十一研究所 | High-power LD (laser diode) side surface surrounding pumping structure module |
CN103779775A (en) * | 2013-12-27 | 2014-05-07 | 中国科学院理化技术研究所 | Thulium-holmium double-doped laser, laser gain medium and wavelength regulation and control method |
CN103915751A (en) * | 2013-01-05 | 2014-07-09 | 中国科学院光电研究院 | Semiconductor laser side pump module |
CN107195324A (en) * | 2017-07-27 | 2017-09-22 | 山西大学 | A kind of high efficiency quantum storing device of continuous variable non-classical optical state |
CN109149338A (en) * | 2018-08-15 | 2019-01-04 | 北京理工大学 | A kind of Er:YAG single-frequency solid laser device system |
-
2008
- 2008-05-30 CN CNA2008100383291A patent/CN101286616A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102227045A (en) * | 2011-05-13 | 2011-10-26 | 中国科学院上海光学精密机械研究所 | All-solid-state 2-micron single-frequency laser of laser diode pump |
CN102780152A (en) * | 2012-06-29 | 2012-11-14 | 中国电子科技集团公司第十一研究所 | High-power LD (laser diode) side surface surrounding pumping structure module |
CN102780152B (en) * | 2012-06-29 | 2014-11-26 | 中国电子科技集团公司第十一研究所 | High-power LD (laser diode) side surface surrounding pumping structure module |
CN103915751A (en) * | 2013-01-05 | 2014-07-09 | 中国科学院光电研究院 | Semiconductor laser side pump module |
CN103915751B (en) * | 2013-01-05 | 2017-06-13 | 中国科学院光电研究院 | A kind of semiconductor laser side pump module |
CN103779775A (en) * | 2013-12-27 | 2014-05-07 | 中国科学院理化技术研究所 | Thulium-holmium double-doped laser, laser gain medium and wavelength regulation and control method |
CN103779775B (en) * | 2013-12-27 | 2014-12-10 | 中国科学院理化技术研究所 | Thulium-holmium double-doped laser, laser gain medium and wavelength regulation and control method |
CN107195324A (en) * | 2017-07-27 | 2017-09-22 | 山西大学 | A kind of high efficiency quantum storing device of continuous variable non-classical optical state |
CN109149338A (en) * | 2018-08-15 | 2019-01-04 | 北京理工大学 | A kind of Er:YAG single-frequency solid laser device system |
CN109149338B (en) * | 2018-08-15 | 2020-08-21 | 北京理工大学 | YAG single-frequency solid laser system |
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