CN101283443A - Process for production of devices - Google Patents
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- CN101283443A CN101283443A CN 200680037806 CN200680037806A CN101283443A CN 101283443 A CN101283443 A CN 101283443A CN 200680037806 CN200680037806 CN 200680037806 CN 200680037806 A CN200680037806 A CN 200680037806A CN 101283443 A CN101283443 A CN 101283443A
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 95
- 238000005530 etching Methods 0.000 claims abstract description 60
- 238000010301 surface-oxidation reaction Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000003647 oxidation Effects 0.000 claims description 32
- 238000007254 oxidation reaction Methods 0.000 claims description 32
- 238000000137 annealing Methods 0.000 claims description 18
- 238000006701 autoxidation reaction Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 238000004380 ashing Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Natural products OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- KBIWNQVZKHSHTI-UHFFFAOYSA-N 4-n,4-n-dimethylbenzene-1,4-diamine;oxalic acid Chemical compound OC(=O)C(O)=O.CN(C)C1=CC=C(N)C=C1 KBIWNQVZKHSHTI-UHFFFAOYSA-N 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 12
- 230000006378 damage Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 80
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000006396 nitration reaction Methods 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 235000014347 soups Nutrition 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910018507 Al—Ni Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 150000003016 phosphoric acids Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
Abstract
The invention relates to a process for the production of devices which comprises the step of forming a wiring circuit by etching an aluminum alloy film and proposes a production technique for protecting the aluminum alloy film from damage as completely as possible to realize highly reliable devices. [MEANS FOR SOLVING PROBLEMS] A process for the production of devices which comprises the step of forming an aluminum alloy film on a substrate and etching the aluminum alloy film to form a wiring circuit, wherein the surface of the aluminum alloy film is oxidized after the formation of the film. This surface oxidation is conducted in such a way that the resulting surface-oxidized aluminum alloy film secures at least 80% of the thicknesswise etching speed as calculated in etching an aluminum alloy film of a prescribed thickness with a naturally oxidized layer by use of an etchant for aluminum alloy over the whole thickness.
Description
Technical field
The present invention relates to the manufacture method of the element in the display device of LCD etc., particularly use the manufacturing technology of aluminium alloy film as the element of wiring circuit material.
Background technology
In recent years, LCD is used to the demonstration of various electronic equipments, and the exploitation that constitutes the display device of this LCD is maked rapid progress.As the display device of this LCD, known for example thin-film transistor (Thin Film Transistor is hereinafter to be referred as TFT) as the wiring material that constitutes this TFT, adopts aluminium (Al) alloy.
Make under the situation of display devices such as TFT, the electrode of distribution or formation electrode is formed by aluminium alloy film, when form adopting the electrode (hereinafter referred to as aluminium alloy layer) of this aluminium alloy film, be provided with the what is called that forms by Mo or Cr etc. at the joint interface of the transparent electrode layer of ITO or IZO etc. and aluminium alloy layer at present and contact barrier layer (or being called cap rock) (for example with reference to non-patent literature 1).
Non-patent literature 1: Uchida Tatsuo writes, and " LCD Technology of future generation (inferior generation liquid crystal デ ィ ス プ レ イ skill Intraoperative) ", front page, Co., Ltd.'s census of manufacturing meeting, on November 1st, 1994, p.36-38
If be situated between with this contact barrier layer, can suppress the electrochemical reaction that the difference owing to the oxidation-reduction potential value of aluminium alloy layer and transparent electrode layer produces, prevent the destruction of joint interface and the increase of contact resistance value.But, being provided with under the situation on this contact barrier layer, it is complicated that the display device structure itself becomes, and the tendency of the increase that causes production cost is arranged.In addition, also there is the trend of the use of abandoning the Cr in the material that constitutes the contact barrier layer in market recently, begins to produce bigger restriction for the formation technology that contacts the barrier layer.
Therefore, proposed to save the contact barrier layer recently and display device structure (for example with reference to patent documentation 1, patent documentation 2) that aluminium alloy layer and transparent electrode layer are directly engaged.
Patent documentation 1: the Japan Patent spy opens the 2004-214606 communique
Patent documentation 2: the Japan Patent spy opens the 2003-89864 communique
Yet, the aluminum alloy materials that these prior aries disclosed is main component basically with aluminium, therefore if directly contact employed soup in the manufacturing process of the display devices such as stripper of developer solution, etchant resist for example, pore etc. then takes place easily corrode or pollute.If this aluminium alloy layer produces defectives such as pore, then may influence the electrical characteristic of element, degradation under the engagement characteristics when for example aluminium alloy layer and transparent electrode layer directly being engaged.That is,, also do not carry out concrete research for more effective countermeasure at present about the manufacture method of the element of the display device that adopts aluminium alloy film.
The announcement of invention
The present invention finishes under aforesaid background, relate to the manufacture method of element that possesses the etching aluminium alloy film and form the operation of wiring circuit, its purpose is to provide extremely inhibition to the destruction that aluminium alloy film causes, and can realize the manufacturing technology of the element that reliability is high.
In order to solve above-mentioned problem, the present invention possesses to form aluminium alloy film on substrate, this aluminium alloy film of etching and form the manufacture method of element of the operation of wiring circuit, wherein, form aluminium alloy film after, make the aluminium alloy film surface oxidation.
Be formed at aluminium alloy film on the substrate and form the back at film usually and be processed to wiring circuit, but contacting of soups such as the coating of etchant resist at this moment, the developer solution of etchant resist, the stripper of etchant resist and aluminium alloy film may be taken place by photoetching process.Therefore, the surface of aluminium alloy film probably because of with various soups contact erosions such as producing pore or surface contamination.Therefore, among the present invention, after aluminium alloy film forms, on one's own initiative oxidation processes is carried out on the surface of this aluminium alloy film, form surface oxidation tunicle as diaphragm.The oxide film thereon of this aluminium alloy film mainly is the alumina tunicle.The corrosion resistance of this alumina tunicle is good, even therefore contact with various soups, also can suppress the erosion and the pollution of aluminium alloy film.In the manufacture method of element of the present invention, after forming aluminium alloy film on the substrate, carry out oxidation processes, but handling in its film forming of the enterprising Xingqi of substrate before also can aluminium alloy film forming, forming semiconductor layer, insulating barrier etc.Generally speaking, after aluminium alloy film forms, aluminium alloy film is being carried out before certain handles, carrying out oxidation processes earlier and on aluminium alloy film, form the surface oxidation tunicle and get final product.In addition, the oxidation processes of aluminium alloy film can adopt known method such as so-called annealing in process, oxygen ashing treatment.
In addition, among the present invention, the oxidation processes on aluminium alloy film surface it is desirable to following carrying out: can guarantee the condition of the etching speed more than 80% to form oxide film thereon with the etching speed of the thickness direction of being calculated during with the gross thickness etching with etching liquid by aluminium alloy with respect to the aluminium alloy film of the specific thickness that will possess the autoxidation tunicle.Under this situation, implemented regulation oxidation processes aluminium alloy film etching speed the not enough autoxidation tunicle of the upper limit etching speed 100%, but the degree of oxidation that needs to implement in advance surface in fact is than autoxidation tunicle height, not because of with contacting of soup the oxidation processes of the degree of the erosion on aluminium alloy film surface and pollution taking place.Specifically, confirm that if the oxidation processes 95% below of the etching speed of autoxidation tunicle, then the erosion on the aluminium alloy film surface that soup causes or the tendency of pollution do not take place in existence according to the inventor's research.
Though good as the alumina tunicle corrosion resistance that the surface oxidation tunicle forms, also have electrical insulating property simultaneously concurrently.Therefore, when for example directly engaging,, then cause the increase of contact resistance, can't make practical element if having the alumina tunicle at this joint interface with transparent electrode layer such as ITO.Therefore, the inventor studies the structure of the surface oxidation tunicle on the surface that is formed at aluminium alloy film.Found that, formed the aluminium alloy film of surface oxidation tunicle if the etching speed of regulation then can be realized the protection of aluminium alloy film the electrical characteristic of element not being produced under the situation of big influence by oxidation processes.
The known alumina tunicle that forms naturally has the thickness about 5～10nm usually, but the known surface oxidation tunicle that forms by enforceable oxidation processes such as annealing in process is compared with the thickness of autoxidation tunicle, its varied in thickness is little, and it is fine and close that the structure of alumina tunicle itself becomes.That is, specific being not easy with structure itself of the such compactness of image surface oxide film thereon carried out, so the inventor is conceived to the etching speed of the thickness direction of aluminium alloy film.Under the situation of aluminium alloy, when the speed limit process when carrying out this etching is the surface oxidation tunicle of etching aluminium alloy film with etching liquid etching aluminium alloy film.Therefore, for the aluminium alloy film of same composition, the variation of the etching speed of thickness direction is corresponding to the difference of the surface oxidation tunicle self structure of the difference that comprises its thickness.The etching speed of its thickness direction carried out specific when thus, the oxidation processes of aluminium alloy film of the present invention can possess the aluminium alloy film of specific thickness of autoxidation tunicle based on etching.
More particularly, on substrate, form
The aluminium alloy film of above thickness does not carry out being positioned in the atmosphere under the situation of any processing, makes the surface of aluminium alloy film generate the autoxidation tunicle.Possesses the aluminium alloy film of autoxidation tunicle for this, use the aluminium alloy etching liquid, for example phosphoric acid class nitration mixture etching liquid (Kanto Kagaku K. K.'s (Off East chemistry (strain) society) is made: aluminium nitration mixture etching agent, form (Capacity Ratio)/phosphoric acid: ethanedioic acid: acetate: water=16: 1: 2: 1,32 ℃ of liquid temperature) solution of solubilized aluminium alloy such as, with gross thickness etching aluminium alloy film, calculate the etching speed (being called the benchmark etching speed here) on its thickness direction.Then, form the aluminium alloy film of same thickness, form surface oxidation tunicle, with gross thickness etching aluminium alloy film, calculate the etching speed of thickness direction by identical etching liquid based on the oxidation processes of rated condition.If the etching speed when this carries out the oxidation processes of rated condition is the etching speed more than 80% of the benchmark etching speed of trying to achieve in advance; then can not produce in the electrical characteristic to element under the situation of big influence, formation can realize the surface oxidation tunicle of the protection of aluminium alloy film.
The manufacture method of above-mentioned element of the present invention it is desirable to comprise the element more than at least a kind in nickel, cobalt, iron, carbon, the boron, and remainder is the aluminium alloy film of aluminium.Be effective when especially, aluminium alloy film is Al-Ni class alloy.Comprise the Al-Ni class alloy good of nickel in the aluminium with the direct engagement characteristics that engages transparent electrode layer, by adopting manufacture method of the present invention, the good element of engagement state that can directly engage with the manufacturing of low contact resistance value.If adopt the Al-Ni-B alloy in this Al-Ni class alloy, then can be manufactured on the also good element of engagement characteristics in direct joint the with semiconductor layer.
Above-mentioned oxidation processes of the present invention it is desirable to by so-called annealing in process or adopts the ashing treatment of oxygen to carry out.If annealing in process, it is desirable to annealing atmosphere is 20%～100% with oxygen tension meter.Annealing temperature and annealing in process time better are the annealing temperatures of 500 ℃ of 150 ℃～less thaies according to the oxidability of annealing atmosphere and different, 24 hours processing time of 30 minutes～less than.In addition, in the ashing treatment, the oxygen concentration that it is desirable to ashing atmosphere is 80～100%, and the processing time is 10 seconds～less than 2 minutes, and the input electric power during ashing is 50～300W.If exceed the scope of these oxidation processes conditions, then exist to form the too high and tendency of contact resistance value rising in direct joint of suitable oxide film thereon or degree of oxidation.
The simple declaration of accompanying drawing
Fig. 1 is the sketch based on the resistance value measuring element of four-terminal method.
Fig. 2 is that the SEM on the aluminium alloy film surface of 200 ℃ of annealing in process observes photo.
Fig. 3 is that the SEM on the aluminium alloy film surface of 1 minute oxygen ashing treatment observes photo.
Fig. 4 is that the SEM on untreated aluminium alloy film surface observes photo.
Fig. 5 is that the amplification SEM of Fig. 4 observes photo.
The best mode that carries out an invention
Below, preferred forms involved in the present invention is described.In the present embodiment, aluminium alloy film adopts the Al-Ni class alloy of Al-0.4at%B-5.0at%Ni, and transparent electrode layer adopts ITO (to form In
2O
3-10wt%SnO
2).
At first, the investigation result to the relation of oxidation processes and etching speed describes.The following method of the film forming of aluminium alloy film: sputtering condition is made as and drops into electric power 3.0W/cm
2, argon flow amount 100ccm, argon pressure 0.5Pa, by magnetic control sputtering device (special machine Co., Ltd. (ト ッ キ society) system: multichamber type sputter equipment MSL464), on glass substrate, use the Al alloy target material of above-mentioned composition to form thick
Aluminium alloy film.
Then, carry out the oxidation processes of each condition of this aluminium alloy film.As the oxidation processes condition, in air atmosphere, carry out 100 ℃～300 ℃ annealing in process (30 minutes) and oxygen ashing treatment (oxygen flow 50ccm, pressure 10Pa, input electric power 100W, room temperature: 1～3 minute processing time), thereby form sample.
For each sample that has carried out this oxidation processes, lining etchant resist (OFPR800: Tokyo Applied Chemistry Industrial Co., Ltd.'s (East capital ying chemical industry (strain))), dispose 20 μ m stretch circuits formation pattern film, carry out exposure-processed, carry out development treatment with the alkaline-based developer that contains the hydroxide tetramethylammonium (hereinafter to be referred as the TMAH developer solution) of 23 ℃ of concentration 2.38%, liquid temperature.After the development treatment, make by phosphoric acid class nitration mixture etching liquid (Kanto Kagaku K. K.'s (Off East chemistry (strain) society): aluminium nitration mixture etching agent, form (Capacity Ratio)/phosphoric acid: ethanedioic acid: acetate: water=16: 1: 2: 1,32 ℃ of liquid temperature) carrying out circuit forms, by DMSO (is the abbreviation of methyl-sulfoxide, below note is made DMSO) stripper carries out removing of etchant resist, forms 20 μ m stretch circuits.
To carry out so circuit-formed sample and all circuit carried out etching processing, thereby measure its etching speed by above-mentioned phosphoric acid class nitration mixture etching liquid.Phosphoric acid class nitration mixture etching liquid the results are shown in table 1.In addition, after aluminium alloy film forms,, measure its etching speed for only directly also carrying out same etching processing at the sample (being untreated) in about 60 minutes formation autoxidation tunicle of room temperature placement under the air atmosphere.
[table 1]
(etching speed:
)
As shown in table 1, etching speed is measured 2 samples under same oxidation processes condition.In addition, in the table, represent with percentage with respect to the ratio of the average etching speed under each oxidation processes condition of the average etching speed of the sample of untreated formation autoxidation tunicle.As shown in Table 1, if the oxygen ashing treatment carries out more than 2 minutes, the etching speed of 80% when then reaching not enough autoxidation tunicle.
Below, each oxidation processes under the direct situation about engaging of carrying out with transparent electrode layer and the investigation result of contact resistance value thereof are described.Measuring being produced as follows of assess sample of its contact resistance value carries out.
At first, with sputtering condition same as described above, on glass substrate, use the Al alloy target material of above-mentioned composition to form thick
Aluminium alloy film.Then, carry out each above-mentioned oxidation processes after, form by the film formed 20 μ m stretch circuits of aluminium alloy by above-mentioned circuit formation condition.
Then, the substrate that has formed 20 μ m stretch circuits is carried out pure water cleaning, dried, the insulating barrier that forms SiNx on its surface is (thick
).The film forming of this insulating barrier is used sputter equipment, to drop into electric power RF3.0W/cm
2, 300 ℃ of argon flow amount 90ccm, nitrogen flow 10ccm, pressure 0.5Pa, substrate temperatures sputtering condition carry out.
Then, make at surface of insulating layer lining eurymeric etchant resist (Tokyo Applied Chemistry Industrial Co., Ltd.'s (East capital ying chemical industry (strain) society): TFR-970), dispose the 10 μ m * foursquare contact hole opening of 10 μ m pattern film, carry out exposure-processed, carry out development treatment by the TMAH developer solution.Then, use CF
4Dry etching gas, form contact hole.The contact hole formation condition is at CF
4During gas CF
4Gas flow 50ccm, oxygen flow 5ccm, pressure 4.0Pa, power 150W.After contact hole forms, carry out peeling off of etchant resist by etchant resist stripper DMSO shown below.Carry out each assess sample of the lift-off processing of etchant resist and behind the remaining stripper of pure water flush away, carried out dried.
Then, each sample for after the lift-off processing end of this etchant resist uses the ITO target (to form In
2O
3-10wt%SnO
2), in contact hole and form the transparent electrode layer of ITO on every side.The formation of transparent electrode layer is following to be carried out: carry out sputter (70 ℃ of substrate temperatures, input electric power 1.8W/cm
2, argon flow amount 80ccm, oxygen flow 0.7ccm, pressure 0.37Pa), form thick as transparent electrode layer
The ITO film.
Then, at the surface-coated etchant resist of this ITO film (OFPR800: system Tokyo Applied Chemistry Industrial Co., Ltd.'s (East capital ying chemical industry (strain) society)), the configuration pattern film, carry out exposure-processed, TMAH developer solution with 23 ℃ of concentration 2.38%, liquid temperature carries out development treatment, by ethanedioic acid class nitration mixture etching liquid (Kanto Kagaku K. K.'s (Off East chemistry (strain) society) system ITO05N) carry out the formation of 20 μ m stretch circuits, after ITO film circuit formed, (DMSO100wt%) removed etchant resist by stripper.
Form contact hole and pass through the assess sample that contact hole directly engages for the step of passing through as above, measure its contact resistance value by film formed circuit of aluminium alloy and transparent electrode layer.Its measurement result is shown in table 2.The assay method of its contact resistance value is based on as shown in Figure 1 four-terminal method, will as the element of assess sample in atmosphere in 250 ℃ carry out 30 minutes annealing in process after, carry out the resistance value of each assess sample and measure.In addition, in this four-terminal method shown in Figure 1, the terminal part of the assess sample after the heat treatment switches on (3mA) continuously, measures its resistance.
[table 2]
(Ω)
As shown in Table 2, in order to make contact resistance value below 200 Ω, adopt the annealing in process by 100 ℃～300 ℃, the situation that the oxygen ashing treatment below 1.5 minutes forms the surface oxidation tunicle.
By the result of the contact resistance value of the measurement result of the etching speed of table 1 and table 2 as can be known, if can realize the oxidation processes (100 ℃～300 ℃ annealing in process, 1 minute or 1.5 minutes oxygen ashing treatment) of the etching processing more than 80% of the etching speed of autoxidation tunicle, can reduce the contact resistance value when directly engaging with the ITO film.
Then, the observed result to the aluminium alloy film surface in the contact hole of the ITO film in above-mentioned contact hole forms before forming describes.The SEM on aluminium alloy film surface observes photo and is shown in Fig. 2～Fig. 5.Fig. 2 represents the situation of 200 ℃ of annealing in process, and Fig. 3 represents the situation of 1 minute oxygen ashing treatment, Fig. 4 represent to be untreated situation (50,000 times of multiples) of (autoxidation).
The amplification SEM of presentation graphs 4 observes photo (200,000 times of multiples) among Fig. 5, and the aluminium alloy film surface under the situation of affirmation autoxidation tunicle forms a large amount of spileholes.On the other hand, under the situation of Fig. 2 and oxidation processes shown in Figure 3, erosions such as pore are not found on the aluminium alloy film surface.By The above results as can be known, under the situation of be untreated (autoxidation),, think that the reliability that directly engages owing to there is pore is bad though contact resistance is low; On the contrary, if situation of carrying out oxidation processes of the present invention when satisfying practical contact resistance value, can realize the direct connected structure that reliability is high.
In addition, observe photo, confirm that the aluminium alloy film surface under 100 ℃ the situation of annealing in process forms the considerably less spilehole of number though omitted SEM.Think under the situation of oxidation processes less than the degree of 100 ℃ annealing in process, erosions such as pore may take place, also not enough aspect the reliability that directly engages.Judge according to above result,, when reaching 80%～95% the oxidation processes of etching speed of autoxidation tunicle, can form the element that is suitable for actual use as the formation condition of surface oxidation tunicle.
The possibility of utilizing on the industry
As mentioned above, if adopt the present invention, then can be in situation about aluminium alloy film not being damaged The high element of lower fabrication reliability. In addition, make aluminium alloy film and transparent electrode layer or semiconductor layer straight In the situation of joint, if adopt the present invention, also can make the low element of contact resistance value.
Claims (6)
1. the manufacture method of element, it is to possess to form aluminium alloy film on substrate, this aluminium alloy film of etching and form the manufacture method of element of the operation of wiring circuit is characterized in that, form aluminium alloy film after, make the aluminium alloy film surface oxidation.
2. the manufacture method of element as claimed in claim 1 is characterized in that, is had and transparent electrode layer and/or the direct engaging portion of semiconductor layer by the film formed wiring circuit of described aluminium alloy.
3. the manufacture method of element as claimed in claim 1 or 2, it is characterized in that, the oxidation processes on aluminium alloy film surface is following carries out: with the etching speed of the thickness direction of being calculated during with the gross thickness etching with etching liquid by aluminium alloy with respect to the aluminium alloy film of the specific thickness that will possess the autoxidation tunicle, can guarantee the condition of the etching speed more than 80%, form oxide film thereon.
4. the manufacture method of element as claimed in claim 3 is characterized in that, described aluminium alloy etching liquid is in Capacity Ratio phosphoric acid: ethanedioic acid: acetate: water=16: 1: 2: 1 composition, the liquid temperature during etching is 32 ℃.
5. as the manufacture method of each the described element in the claim 1～4, it is characterized in that described aluminium alloy film comprises the element more than at least a kind in nickel, cobalt, iron, carbon, the boron, remainder is an aluminium.
6. as the manufacture method of each the described element in the claim 1～5, it is characterized in that described oxidation processes is annealing in process or the ashing treatment that adopts oxygen.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005299666A JP2007109916A (en) | 2005-10-14 | 2005-10-14 | Manufacturing method of element |
| JP299666/2005 | 2005-10-14 |
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| CN101283443A true CN101283443A (en) | 2008-10-08 |
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| CN 200680037806 Pending CN101283443A (en) | 2005-10-14 | 2006-10-13 | Process for production of devices |
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| JP (1) | JP2007109916A (en) |
| KR (1) | KR20080063339A (en) |
| CN (1) | CN101283443A (en) |
| TW (1) | TWI371082B (en) |
| WO (1) | WO2007043645A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034832A (en) * | 2009-09-28 | 2011-04-27 | 株式会社神户制钢所 | Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| CN110993694A (en) * | 2019-10-22 | 2020-04-10 | 清华大学 | Two-dimensional thin film field effect transistor with sub-10 nm channel prepared in autoxidation mode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011091352A (en) * | 2009-09-28 | 2011-05-06 | Kobe Steel Ltd | Thin-film transistor substrate, method of manufacturing the same, and display device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05102151A (en) * | 1991-10-07 | 1993-04-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0618912A (en) * | 1992-07-03 | 1994-01-28 | Fujitsu Ltd | Liquid crystal display device and its production |
| JP2944336B2 (en) * | 1992-11-02 | 1999-09-06 | シャープ株式会社 | Wiring structure |
| JPH07169966A (en) * | 1993-12-16 | 1995-07-04 | Sharp Corp | Electronic component and its manufacture |
| JP4663829B2 (en) * | 1998-03-31 | 2011-04-06 | 三菱電機株式会社 | Thin film transistor and liquid crystal display device using the thin film transistor |
| JP2001023990A (en) * | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JP2003273109A (en) * | 2002-03-14 | 2003-09-26 | Advanced Display Inc | Al WIRING FILM AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY EMPLOYING THE SAME |
| JP3940385B2 (en) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | Display device and manufacturing method thereof |
| JP2005062802A (en) * | 2003-07-28 | 2005-03-10 | Advanced Display Inc | Method for manufacturing thin film transistor array substrate |
-
2005
- 2005-10-14 JP JP2005299666A patent/JP2007109916A/en not_active Withdrawn
-
2006
- 2006-10-13 WO PCT/JP2006/320450 patent/WO2007043645A1/en active Application Filing
- 2006-10-13 KR KR1020087009478A patent/KR20080063339A/en not_active Application Discontinuation
- 2006-10-13 TW TW095137661A patent/TWI371082B/en not_active IP Right Cessation
- 2006-10-13 CN CN 200680037806 patent/CN101283443A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034832A (en) * | 2009-09-28 | 2011-04-27 | 株式会社神户制钢所 | Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| CN110993694A (en) * | 2019-10-22 | 2020-04-10 | 清华大学 | Two-dimensional thin film field effect transistor with sub-10 nm channel prepared in autoxidation mode |
| CN110993694B (en) * | 2019-10-22 | 2023-08-25 | 清华大学 | Two-dimensional thin film field effect transistor for preparing sub-10 nm channel by autoxidation mode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007109916A (en) | 2007-04-26 |
| TW200725805A (en) | 2007-07-01 |
| TWI371082B (en) | 2012-08-21 |
| WO2007043645A1 (en) | 2007-04-19 |
| KR20080063339A (en) | 2008-07-03 |
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