CN101281849B - Apparatus for inhibiting multi-beam klystron higher harmonic mode oscillation and reducing sundry spectrum level - Google Patents
Apparatus for inhibiting multi-beam klystron higher harmonic mode oscillation and reducing sundry spectrum level Download PDFInfo
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- CN101281849B CN101281849B CN2008100557876A CN200810055787A CN101281849B CN 101281849 B CN101281849 B CN 101281849B CN 2008100557876 A CN2008100557876 A CN 2008100557876A CN 200810055787 A CN200810055787 A CN 200810055787A CN 101281849 B CN101281849 B CN 101281849B
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- electric absorption
- beam klystron
- metal closures
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Abstract
The invention provides a device for inhibiting multiple injection speed regulating pipe higher-order mode oscillation and reducing impure spectrum level, which is composed of electric absorption material with set dielectric constant and dielectric loss. By selecting material parameter, shape and size of the device, placement position and connection method, the higher-order mode oscillation with phi mode field shape arrangement in multiple injection speed regulating pipe double-clearance coupling cavity output circuit is effectively inhibited and the impure spectrum level induced by the mode is reduced. The device of the present invention can inhibit higher-order mode type oscillation and reduce impure spectrum level for the multiple injection speed regulating pipe with double-clearance coupling cavity output circuit.
Description
Technical field
The present invention relates to the particular component of microwave electron tube, is a kind of device that suppresses multi-beam klystron higher harmonic mode oscillation and reduce sundry spectrum level.
Background technology
In order to expand the bandwidth of multiple-beam klystron, adopt the double gap coupling cavity usually as the broadband output circuit.Owing to have internal feedback between two resonant cavitys of double gap coupling cavity output circuit,, can cause the higher modes vibration under certain condition, make the multiple-beam klystron cisco unity malfunction.In addition, under high frequency pumping,, will produce higher modes, form assorted spectrum, reduce the quality of output spectrum, and cause the sparking of transmitter output waveguide and disturb other microwave electron system because electronics is annotated the existence of the velocity variations or the electronics that reverses on a small quantity.Therefore suppress multi-beam klystron higher harmonic mode oscillation and no matter reduce sundry spectrum level to improving the multiple-beam klystron performance and guaranteeing that its operate as normal in the microwave electron system is all significant.
Suppress the multiple-beam klystron vibration and can on the double gap coupling cavity, add absorbing cavity.But add the vibration that absorbing cavity can only suppress higher modes, and volume is big, processing and welding procedure are complicated.This device is big to the loading of the higher mode that has π mould field shape and distribute, and very little to the loading with mode of operation that 2 π mould field shapes distribute.
Summary of the invention
The objective of the invention is to disclose a kind of device that suppresses multi-beam klystron higher harmonic mode oscillation and reduce sundry spectrum level, can suppress multi-beam klystron higher harmonic mode oscillation effectively and reduce sundry spectrum level.
For achieving the above object, technical solution of the present invention is:
A kind of device that suppresses multi-beam klystron higher harmonic mode oscillation and reduce sundry spectrum level is provided, can suppress the higher modes vibration to multiple-beam klystron with double gap coupling cavity output circuit, reduce sundry spectrum level, it comprises T shape electric absorption ceramic material, metal closures, vertical side is filled in the reguline metal a clip slot, and the side that T shape electric absorption ceramic material has boss is fixed in the clip slot.
Described device, its described electric absorption ceramic material is Al
2O
3-TiO
2Composite attenuation material or AlN-SiC composite attenuation material; Metal closures is oxygen-free copper.
Described device, its described being fixed in the clip slot is with after the metallization of electric absorption ceramic material, adopts the method for high temperature brazing to be welded in the clip slot of metal closures.
Described device, it is that metal closures is fixed on the chamber wall of multiple-beam klystron double gap output cavity in use, and makes the electric absorption ceramic material go deep into a part in the coupling slot in the coupling slot centre.
Described device, it is described affixed, be to be welded on the chamber wall of multiple-beam klystron double gap output cavity by the high temperature brazing mode, its chamber wall is the chamber wall relative with the output waveguide coupling aperture, this chamber wall is provided with the ccontaining through hole of a metal closures, insert ccontaining through hole with the inside direction of electric absorption ceramic material on the metal closures, after metal closures is welded in ccontaining through hole, its outer end is concordant with chamber wall lateral surface, and the electric absorption ceramic material gos deep into a part (seeing Fig. 3 (b)) in the coupling slot in the coupling slot centre.
Major advantage of the present invention: volume is little, and preparation and assembly technology are simple.This device is big to the loading of the higher mode that has π mould field shape and distribute, and very little to the loading with mode of operation that 2 π mould field shapes distribute.Thereby can guarantee when suppressing the higher mode vibration and reducing sundry spectrum level, very little to the efficient and the power-frequency range properties influence of multiple-beam klystron.
Description of drawings
Fig. 1 is an electric absorption ceramic material structure;
Fig. 2 (a) is the device schematic diagram that suppresses multi-beam klystron higher harmonic mode oscillation and reduce sundry spectrum level; Fig. 2 (b) is the A-A profile of Fig. 2 (a);
Fig. 3 (a) is that multiple-beam klystron double gap output cavity loads the apparatus structure schematic diagram that suppresses multi-beam klystron higher harmonic mode oscillation and reduce sundry spectrum level;
Fig. 3 (b) is a coupling slot place profile.
Embodiment
Fig. 1 is the structural representation that the present invention suppresses the multi-beam klystron higher harmonic mode oscillation and the electric absorption ceramic material 21 of the device that reduces sundry spectrum level.
See Fig. 2, among the figure, electric absorption ceramic material 21, metal closures 22.The present invention suppresses multi-beam klystron higher harmonic mode oscillation and reduces the device 34 of sundry spectrum level, mainly comprises electric absorption ceramic material 21 and metal closures 22 two parts, and electric absorption ceramic material 21 is welded on the clip slot of metal closures 22.This device 34 is welded on the chamber wall of multiple-beam klystron double gap output cavity by the high-temperature metal brazing mode, and makes electric absorption ceramic material 21 go deep in the coupling slot part in the coupling slot centre, sees Fig. 3 (a) and (b).Among the figure, multiple-beam klystron double gap output cavity cavity 31, output waveguide coupling aperture 32, upper chamber cover 33 suppresses multi-beam klystron higher harmonic mode oscillation and the device 34 that reduces sundry spectrum level, cavity of resorption lid 35.
Electric absorption ceramic material 21 of the present invention is the core components that suppress multi-beam klystron higher harmonic mode oscillation and reduce the device of sundry spectrum level, and electric absorption ceramic material 21 can adopt Al
2O
3-TiO
2Attenuating material, also available AlN-SiC attenuating material.Metal closures 22 guarantees the vacuum seal performance of whole system, and plays the effect that effective transmission electric absorption ceramic material 21 absorbs the heat of changing behind the microwave, and material is an oxygen-free copper.
Specify the operation principle that the present invention suppresses multi-beam klystron higher harmonic mode oscillation and reduces the device of sundry spectrum level below.
Between two resonant cavitys of the double gap coupling cavity output circuit of multiple-beam klystron, there is internal feedback, therefore,, can causes the higher modes vibration under certain condition.In addition, under high frequency pumping,, also will produce higher modes, form assorted spectrum because electronics is annotated the existence of the velocity variations or the electronics that reverses on a small quantity.
By in the double-gap coupling cavity of multiple-beam klystron output circuit, placing apparatus of the present invention, as shown in Figure 3, and select material parameter, shape and size and placement location and the method for attachment of electric absorption ceramic material 21 in this device, relaxation, decay, absorption electromagnetic waves such as the molecular polarization of dependence medium or interfacial polarization, can suppress to have in the double-gap coupling cavity of multiple-beam klystron output circuit vibration of the higher mode that π mould field shape distributes, reduce the sundry spectrum level that causes by this quasi-mode.This device is big to the loading of the higher mode that has π mould field shape and distribute, and very little to the loading with mode of operation that 2 π mould field shapes distribute.
Claims (4)
1. one kind is suppressed multi-beam klystron higher harmonic mode oscillation and the device that reduces sundry spectrum level, can suppress the higher modes vibration to multiple-beam klystron with double gap coupling cavity output circuit, reduce sundry spectrum level, it is characterized in that: the T shape electric absorption ceramic block of described device is connected with metal closures; There is a clip slot the vertical side of metal closures, and the side that T shape electric absorption ceramic block has boss is fixed in the clip slot; The device of described inhibition multi-beam klystron higher harmonic mode oscillation and reduction sundry spectrum level is placed in the coupling slot of double gap coupling cavity, and metal closures is connected with the chamber wall.
2. device as claimed in claim 1 is characterized in that: the material of described T shape electric absorption ceramic block is Al
2O
3-TiO
2Or AlN-SiC electric attenuation material, its relative dielectric constant is in 20～25 scopes, and loss tangent is in 0.6～0.8 scope; The degree of depth h that this T shape electric absorption ceramic block inserts coupling slot is 1/4～1/3 of coupling slot width H, and its thickness t is 0.4～0.6 of a coupling slot thickness T, and its length l is 1/8～1/10 of a coupling slot perimeter L; T shape electric absorption ceramic block inserts the degree of depth 1～2mm of metal closures part, and the material of metal closures is an oxygen-free copper.
3. device as claimed in claim 1 is characterized in that: the side that described T shape electric absorption ceramic block has boss is fixed in the clip slot of metal closures by high temperature brazing.
4. device as claimed in claim 1, it is characterized in that: described metal closures is fixed on the chamber wall of multiple-beam klystron double gap output cavity by high temperature brazing, and making the electric absorption ceramic material go deep into a part in the coupling slot in the coupling slot position, its degree of depth h is 1/4～1/3 of coupling slot width H.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100557876A CN101281849B (en) | 2008-01-09 | 2008-01-09 | Apparatus for inhibiting multi-beam klystron higher harmonic mode oscillation and reducing sundry spectrum level |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100557876A CN101281849B (en) | 2008-01-09 | 2008-01-09 | Apparatus for inhibiting multi-beam klystron higher harmonic mode oscillation and reducing sundry spectrum level |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101281849A CN101281849A (en) | 2008-10-08 |
| CN101281849B true CN101281849B (en) | 2011-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100557876A Expired - Fee Related CN101281849B (en) | 2008-01-09 | 2008-01-09 | Apparatus for inhibiting multi-beam klystron higher harmonic mode oscillation and reducing sundry spectrum level |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740296B (en) * | 2008-11-19 | 2011-10-12 | 中国科学院电子学研究所 | Lateral side cooling structure for drift section of sheet beam klystron |
| CN101707273B (en) * | 2009-04-29 | 2012-07-04 | 中国科学院电子学研究所 | Device for widening bandwidth of double-gap coupling cavity output circuit in overlapping mode |
| CN104752124A (en) * | 2013-12-31 | 2015-07-01 | 中国科学院电子学研究所 | Higher-order mode cylindrical output cavity |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4439746A (en) * | 1980-05-23 | 1984-03-27 | Thomson-Csf | Extended interaction microwave oscillator including a sucession of vanes with orifices |
| CN2450791Y (en) * | 2000-11-27 | 2001-09-26 | 中国科学院电子学研究所 | High power microwave window of conic change structure |
| CN1553471A (en) * | 2003-05-26 | 2004-12-08 | 中国科学院电子学研究所 | Double gap microwave resournance chamber with pai modular strong coupling |
| CN101051594A (en) * | 2007-03-29 | 2007-10-10 | 汕头大学 | High order mould multiple injection speed regulating tube output circuit |
-
2008
- 2008-01-09 CN CN2008100557876A patent/CN101281849B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4439746A (en) * | 1980-05-23 | 1984-03-27 | Thomson-Csf | Extended interaction microwave oscillator including a sucession of vanes with orifices |
| CN2450791Y (en) * | 2000-11-27 | 2001-09-26 | 中国科学院电子学研究所 | High power microwave window of conic change structure |
| CN1553471A (en) * | 2003-05-26 | 2004-12-08 | 中国科学院电子学研究所 | Double gap microwave resournance chamber with pai modular strong coupling |
| CN101051594A (en) * | 2007-03-29 | 2007-10-10 | 汕头大学 | High order mould multiple injection speed regulating tube output circuit |
Non-Patent Citations (1)
| Title |
|---|
| JP昭61-279036A 1986.12.09 |
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| CN101281849A (en) | 2008-10-08 |
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