CN101257080B - 氮化物基脊型发光二极管和激光器及制备方法 - Google Patents
氮化物基脊型发光二极管和激光器及制备方法 Download PDFInfo
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- CN101257080B CN101257080B CN200810101681.5A CN200810101681A CN101257080B CN 101257080 B CN101257080 B CN 101257080B CN 200810101681 A CN200810101681 A CN 200810101681A CN 101257080 B CN101257080 B CN 101257080B
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 41
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical class [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
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- 230000006798 recombination Effects 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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CN200810101681.5A CN101257080B (zh) | 2008-03-11 | 2008-03-11 | 氮化物基脊型发光二极管和激光器及制备方法 |
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CN101257080B true CN101257080B (zh) | 2014-10-15 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6081062B2 (ja) * | 2011-01-26 | 2017-02-15 | エルジー イノテック カンパニー リミテッド | 発光素子 |
CN102545051A (zh) * | 2012-01-16 | 2012-07-04 | 苏州纳睿光电有限公司 | 一种氮化镓基激光器管芯的制备方法 |
CN103022892B (zh) * | 2012-12-14 | 2015-03-25 | 武汉电信器件有限公司 | 波长为808nm的大功率激光器芯片结构及其制作方法 |
JP6112986B2 (ja) | 2013-06-19 | 2017-04-12 | キヤノン株式会社 | 半導体dbrおよび、半導体発光素子、固体レーザ、光音響装置、画像形成装置、および半導体dbrの製造方法 |
CN105048286A (zh) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | 氮化镓基激光二极管及其制备方法 |
CN106887789B (zh) * | 2017-03-13 | 2019-10-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体激光器及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1521907A (zh) * | 2003-01-27 | 2004-08-18 | 中国科学院半导体研究所 | 窗口隔离型极小孔半导体激光器和制作方法 |
CN1528037A (zh) * | 2001-03-28 | 2004-09-08 | ���ǻ�ѧ��ҵ��ʽ���� | 氮化物半导体元件 |
CN101017959A (zh) * | 2006-02-09 | 2007-08-15 | 三星电子株式会社 | 脊形波导半导体激光二极管 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1528037A (zh) * | 2001-03-28 | 2004-09-08 | ���ǻ�ѧ��ҵ��ʽ���� | 氮化物半导体元件 |
CN1521907A (zh) * | 2003-01-27 | 2004-08-18 | 中国科学院半导体研究所 | 窗口隔离型极小孔半导体激光器和制作方法 |
CN101017959A (zh) * | 2006-02-09 | 2007-08-15 | 三星电子株式会社 | 脊形波导半导体激光二极管 |
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