CN101241854B - A wafer production technology - Google Patents
A wafer production technology Download PDFInfo
- Publication number
- CN101241854B CN101241854B CN2007100371548A CN200710037154A CN101241854B CN 101241854 B CN101241854 B CN 101241854B CN 2007100371548 A CN2007100371548 A CN 2007100371548A CN 200710037154 A CN200710037154 A CN 200710037154A CN 101241854 B CN101241854 B CN 101241854B
- Authority
- CN
- China
- Prior art keywords
- wafer
- focusing ring
- electrostatic chuck
- edge
- production technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a wafer production technology, comprising: firstly sequential depositing multi-layer medium to form the wafer, then entering etching, wherein the wafer surface needs for cleaning after each layer of medium deposition, especially the wafer edge; before etching, no metal is adhered on the wafer surface. In etching, the wafer is disposed on the electrostatic chuck; a focusing ring is arranged on at the outer edge of the wafer and covers the electrostatic chuck, wherein the focusing ring is higher than the surface of the wafer. Compared with the prior technology the inventive wafer has no metal residues on the surface before etching and effectively prevents the metal inductive electrons. Furthermore, the focusing ring is higher than the wafer surface all long time, which effectively prevents the electrons from gathering at the wafer edge so as to stop the arc discharge phenomenon.
Description
Technical field
The present invention relates to wafer production technology.
Background technology
In the processing procedure of conductor etching, wafer is placed on the electrostatic chuck usually, and the zone beyond the crystal round fringes is blocked by focusing ring (Focus Ring).The electron distributions that focusing ring is used to prevent to produce by bombardment plasma is to wafer place in addition.
Yet in actual processing procedure, the excessive gathering owing to electronics on the wafer causes crystal round fringes the arc discharge phenomenon to occur usually, thereby causes wafer loss.
Through research, the reason that the excessive gathering of electronics causes on the crystal round fringes has two: one of them is because focusing ring is long service time, focusing ring will attenuation, when the thickness of focusing ring and wafer are on the same plane substantially, electronics will accumulate in crystal round fringes in a large number, causes arc discharge.
In addition and since the edge of wafer usually can processing procedure in front in residual a lot of metal patterns, these metal remained can be responded to electronics, make electronics accumulate in the edge of wafer, and then produce the phenomenon of arc discharge.
Summary of the invention
The object of the present invention is to provide a kind of wafer production technology, this technology can effectively solve the arc discharge phenomenon that produces in the etch process.
For achieving the above object, the invention provides a kind of wafer production technology, at first pass through the sequential aggradation multilayer dielectricity to form wafer, enter etch process then, wafer is placed on the electrostatic chuck, focusing ring is arranged on the outward flange of wafer and hides electrostatic chuck, wherein, after finishing, each layer of wafer dielectric deposition all need the cleaning wafer surface, and need the cleaning wafer edge, make wafer before entering etch process, do not have metal to adhere on its surface, and in etch process, keep focusing ring to be higher than the surface of wafer.
Compared with prior art, wafer of the present invention is when entering etch process, the surface of wafer can residual any metal, effectively prevent metal induction electronics, in addition, remain focusing ring and be higher than crystal column surface, prevent that effectively electronics from accumulating in crystal round fringes, and then effectively prevent the generation of arc discharge phenomenon.
Embodiment
Wafer production technology of the present invention deposits different medium at first in order to form wafer, enters etch process then.After each layer dielectric deposition finishes, all need the cleaning wafer surface, especially need the cleaning wafer edge.
In etch process, wafer is placed on the electrostatic chuck, and focusing ring is arranged on the outward flange of wafer and hides electrostatic chuck.
It is clean that the edge of the wafer that uses needs to keep before the electrostatic chuck of packing into, promptly can be in preceding continuous processing procedure at the edge of wafer kish, effectively prevent because kish to the induction of electronics, causes electronics to be collected at the surface of wafer, thereby causes the arc discharge phenomenon.
In the process of electronics sputter, electrostatic chuck can help electronics evenly to distribute on the surface of wafer.In addition, when the upper surface and the crystal column surface of focusing ring is in same plane, then need in time to change focusing ring.
Claims (1)
1. wafer production technology, at first pass through the sequential aggradation multilayer dielectricity to form wafer, enter etch process then, wafer is placed on the electrostatic chuck, focusing ring is arranged on the outward flange of wafer and hides electrostatic chuck, it is characterized in that: after each layer of wafer dielectric deposition finishes, all need the cleaning wafer surface, and need the cleaning wafer edge, make wafer before entering etch process, do not have metal to adhere on its edge, and in etch process, keep focusing ring to be higher than the surface of wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100371548A CN101241854B (en) | 2007-02-06 | 2007-02-06 | A wafer production technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100371548A CN101241854B (en) | 2007-02-06 | 2007-02-06 | A wafer production technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101241854A CN101241854A (en) | 2008-08-13 |
| CN101241854B true CN101241854B (en) | 2011-06-01 |
Family
ID=39933244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100371548A Expired - Fee Related CN101241854B (en) | 2007-02-06 | 2007-02-06 | A wafer production technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101241854B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709254A (en) * | 2012-06-11 | 2012-10-03 | 上海宏力半导体制造有限公司 | Method for reducing arc discharge of wafer, wafer structure and method for manufacturing integrated circuit |
| CN105826240B (en) * | 2015-01-07 | 2019-05-31 | 中芯国际集成电路制造(上海)有限公司 | The method for avoiding wafer from generating point discharge defect |
| CN110670049A (en) * | 2019-11-19 | 2020-01-10 | 武汉新芯集成电路制造有限公司 | Vapor deposition method and device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
| CN1508858A (en) * | 2002-12-17 | 2004-06-30 | 华邦电子股份有限公司 | Crystal circle center correcting device and correcting method |
| US6837967B1 (en) * | 2002-11-06 | 2005-01-04 | Lsi Logic Corporation | Method and apparatus for cleaning deposited films from the edge of a wafer |
| CN1692475A (en) * | 2003-05-12 | 2005-11-02 | 索绍株式会社 | Plasma etching chamber and plasma etching system using same |
-
2007
- 2007-02-06 CN CN2007100371548A patent/CN101241854B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
| US6837967B1 (en) * | 2002-11-06 | 2005-01-04 | Lsi Logic Corporation | Method and apparatus for cleaning deposited films from the edge of a wafer |
| CN1508858A (en) * | 2002-12-17 | 2004-06-30 | 华邦电子股份有限公司 | Crystal circle center correcting device and correcting method |
| CN1692475A (en) * | 2003-05-12 | 2005-11-02 | 索绍株式会社 | Plasma etching chamber and plasma etching system using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101241854A (en) | 2008-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11127568B2 (en) | Plasma etching apparatus | |
| CN101241854B (en) | A wafer production technology | |
| CN101492808A (en) | Surface treatment process for square TiW target material for sputtering | |
| US9371578B2 (en) | Tantalum coil for sputtering and method for processing the coil | |
| KR101344085B1 (en) | Film-forming method and film-forming apparatus | |
| TW202000961A (en) | Wafer processing deposition shielding components | |
| WO2012036936A3 (en) | Methods for depositing metal in high aspect ratio features | |
| CN105695942B (en) | Ring piece structure and manufacturing method thereof | |
| JP2013538295A5 (en) | ||
| TWI686491B (en) | Method and process chamber for depositing material on a substrate | |
| US20220044918A1 (en) | Multi-patterned sputter traps and methods of making | |
| US8637142B2 (en) | Coated article and method for manufacturing same | |
| CN106611737B (en) | Ring pressing device | |
| CN104593735B (en) | A kind of shielding construction for reaction chamber | |
| KR20150143233A (en) | Internal member applying apparatus for depositing thin film and method for the same | |
| US20180218890A1 (en) | Sputtering coil product and method of making | |
| US9659758B2 (en) | Coils utilized in vapor deposition applications and methods of production | |
| CN102691050A (en) | Cleaning method for tungsten chemical vapor deposition system | |
| US10153135B2 (en) | Plasma etching apparatus | |
| CN103730348A (en) | Method for reducing plasma etcher cavity pollution in back hole process | |
| US10030301B2 (en) | Upright target structure and sputtering equipment | |
| CN105506561A (en) | Method for inhibiting edge effect in preparation method of erosion-resistant coating of vane | |
| WO2015124501A1 (en) | A method of sputter deposition of a film on an essentially plane extended surface of a substrate | |
| CN201153117Y (en) | Improvement mechanism of semiconductor machine | |
| CN203855636U (en) | Film coating machine table and reaction cavity as well as spindle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110601 Termination date: 20190206 |