CN101241845A - Silicon parts for plasma reaction chamber - Google Patents
Silicon parts for plasma reaction chamber Download PDFInfo
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- CN101241845A CN101241845A CNA200810083894XA CN200810083894A CN101241845A CN 101241845 A CN101241845 A CN 101241845A CN A200810083894X A CNA200810083894X A CN A200810083894XA CN 200810083894 A CN200810083894 A CN 200810083894A CN 101241845 A CN101241845 A CN 101241845A
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Abstract
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
Description
The application is that application number is 03811282.5, the applying date is on March 21st, 2002003, denomination of invention is divided an application for the patent application of " silicon parts for plasma reaction chamber ".
Technical field
The present invention relates to the silicon parts for plasma reaction chamber of processing semiconductor material.The invention still further relates to the technology of producing and using silicon parts.
Background technology
At the semi-conducting material manufacture field, vacuum processing chamber is used to the chemical vapor deposition (CVD) of material on the etching of material and the matrix.Make and handle gas and flow into Processing Room, apply energy to handling gas simultaneously, radio frequency (RF) for example is so that produce plasma.
Represented the top electrode (or " spray nozzle type electrode ") 10 in the disclosed single-chip etching machine usefulness sub-assembly in the common U.S. Patent No. of transferring the possession of 6376385 among Fig. 1.Top electrode 10 usually and electrostatic chuck use together, electrostatic chuck comprises the bottom electrode (not shown), below top electrode 10, wafer supporting is on bottom electrode.
But electrode assembly is the expendable part that must regularly replace.Because electrode assembly is fixed on the temperature control component, for the ease of changing, the upper surface of the outer rim of top electrode 10 joins on the support ring 12.The outward flange of support ring 12 is clamped on the temperature control component 14 with water-cooling channel 13 by clamping ring 16.By water inlet/delivery port 13a, 13b, water circulates in cooling duct 13.Plasma confinement ring 17 is around top electrode 10.Plasma confinement ring 17 is fixed on the dielectric annulus 18, and dielectric annulus 18 is fixed on the dielectric enclosure 18a.Plasma confinement ring 17 pressure reduction in the device that induces reaction, and the resistance between augmenting response locular wall and the plasma, thus plasma is focused between top electrode 10 and the bottom electrode.
By the perforate 20 in the temperature control component 14, be provided for top electrode 10 from the processing gas of source of the gas.Handle gas and scattered by one or more baffle plates 22, and through the gas flow channel (not shown) in the top electrode 10, thereby handling gas dispersion in reative cell 24.In order to strengthen the heat conduction of the utmost point from power on 10, can supply with the space between the apparent surface who handles gas filling temp control element 14 and support ring 12 to temperature control component 14.In addition, the gas passage 27 that links to each other with gas passage (not shown) in annulus 18 or the confinement ring 17 allows monitor pressures in reative cell 24.In order under the pressure between temperature control component 14 and the support ring 12, to keep handling gas, between the apparent surface of surface of support ring 12 and element 14, sealing gasket 28 is set, between the apparent surface of the upper surface of support ring 12 and element 14, sealing gasket 29 is set.In order to keep the vacuum environment in the reative cell 24, between element 14 and element 18b, other sealing gasket 30,32 is set between element 18b and shell 18a.
In this parallel-plate plasma reactor, wafer to be processed is placed on the bottom electrode, at bottom electrode be parallel to and produce the RF plasma between the top electrode of bottom electrode.Top electrode is made by graphite.But described in U.S. Patent No. 6376977, in the plasma etching process, the particulate of graphite top electrode can drop on the wafer of processing in the reative cell, thereby pollutes described wafer.
In addition, also make the top electrode of parallel-plate plasma reactor with single crystal silicon material.But described in U.S. Patent No. 6376977, in the manufacture process of top electrode, beavy metal impurity can be attached on the monocrystalline silicon.When subsequently in semiconductor device fabrication, when using the top electrode of being made by single crystal silicon material, metal impurities can cause pollution problem.
U.S. Patent No. 5993597 is open owing to during the plasma etching, the stress on the electrode surface and the cause of micro-crack, and the plasma etching electrode made from silicon can produce dust.
Consider the high cleanliness requirement of processing semiconductor material, need metals content impurity to reduce, and can reduce the parts of semiconductor processing equipment of the pollution of the semi-conducting material that causes by this metal impurities in the course of processing, for example electrode.
Summary of the invention
Silicon parts for the usefulness of semiconductor processing equipment is provided.Described silicon has partly reduced the concentration of the metal impurities that have high mobility in silicon.Described silicon parts can be used in the plasma process chamber, so that reduce, preferably makes in the semiconductor fabrication processes, and the pollution of the semiconductor substrate that is caused by such metal impurities reaches minimum.
A preferred embodiment producing the method for silicon parts comprises from silicon materials cutting-out silicon plate.In cutting process, metal impurities are attached on the cut surface of silicon plate.At least handle the cut surface of silicon plate, so that remove metal impurities from the silicon plate.
Metal impurities can be included in the high metal of mobility in the silicon.Metal impurities are mainly derived from the cutting tool that is used for downcutting from silicon materials the silicon plate.Be preferably in before metal impurities obtain to be enough to move to enough time outside the cut surface zone from the cut surface of silicon plate, handle the silicon plate.The metal impurities that are included in the cut surface zone are removed in described processing.In a preferred embodiment, the concentration of the metal impurities on the cut surface of silicon plate can be lowered to reduced levels.
In a preferred embodiment, silicon parts is silicon electrode or silicon electrode sub-assembly.In another preferred embodiment, silicon electrode is used in the shower nozzle (showerhead) of semiconductor processing equipment.
Description of drawings
In conjunction with the accompanying drawings,, will be easier to understand the preferred embodiments of the present invention according to following detailed description, wherein:
Fig. 1 is the cross-sectional view of an embodiment of graphic extension spray nozzle type electrode assembly.
Fig. 2 is the cross-sectional view of an embodiment of the graphic extension electrode assembly that comprises the planar silicon electrode.
An embodiment of Fig. 3 graphic extension staged silicon electrode.
Fig. 4 is the cross-sectional view that graphic extension comprises the parallel-plate plasma equipment of the staged electrode shown in Fig. 3.
Embodiment
The silicon parts that is suitable for for the semiconductor processing equipment use is provided.Silicon parts comprises the metal of low content, and described metal is the impurity that being not intended in the silicon introduced.Such metal impurities are undesirable, because they can influence the performance of silicon parts, and in semi-conducting material processing, pollute semiconductor substrate.
In a preferred embodiment, silicon parts is a silicon electrode.In another preferred embodiment, silicon parts is arranged in the silicon electrode sub-assembly.Other illustration silicon parts that can be made into comprises the annulus that is used in the plasma-reaction-chamber.As described below, by to silicon blank section, and handle section, thereby significantly reduce the metals content impurity in the section, can be made into such silicon parts.
By utilizing cutting tool,, make silicon parts from silicon materials cutting silicon plate.Cutting tool comprises in the cutting, the outer metal covering that contacts with silicon materials.For example, cutting tool can be a fret saw, and described fret saw comprises the metal blade with metal coating.In the cutting, because wearing and tearing, the metal that comprises in the metal coating can be removed from blade, and is attached on one or more surfaces of silicon plate.
Copper and copper alloy is the illustration material of metal external coating that is used to form the blade of the fret saw that is used to cut silicon materials.The brass that comprises copper and zinc has been used as the coating in the fret saw blade.For example, the brass external coating is applied to the iron-bearing materials in the fret saw blade, for example on the steel.As being entitled as " SIMOX Side or Polysilicon Backsidewhich is the Stronger Gettering Side for the Metal Impurities " (Proceedings of the Seventh International Symposium onSilicon-On-Insulator Technology and Devices at M.B.Shabani etc., The ElectrochemicalSociety, Inc., Vol.96-3,162-175 page or leaf (19996)) described in the publication, by diffusion, copper has high animal migration (mobility) in silicon.Even for spreading in silicon, copper has low activation enthalpy, thereby at low temperatures, also can move in silicon crystal.Thereby, under high temperature and low temperature, copper can be in the silicon crystal piece rapid diffusion.In addition, copper can be out-diffusion to silicon face, and from the process of high temperature cooling silicon, accumulates on the described surface.Also this gathering can be taken place at room temperature.It is a problem in the manufacturing of high-purity p type and n type silicon wafer that copper pollutes.
Except copper, other metal that has high mobility in silicon comprises zinc, titanium, vanadium, chromium, manganese, iron, cobalt and nickel.Alkali metal, for example sodium also has high mobility.Referring to W.R.Runyan and K.E.Bean, Semiconductor Integrated CircuitProcessing Technology, Addison Wesley, 414-415 page or leaf (1994).These metals can produce dark electronic state in silicon, thereby reduce the performance of silicon device.Referring to C.R.M.Grovenor, Microelectronic Materials, Institute of PhysicsPublishing, 28-32 page or leaf (1994).
The inventor finds that the cutting technique that is used for from silicon materials cutting silicon plate can cause metal impurities to be attached to one or more surfaces of silicon plate.These metals originate from the wearing and tearing of cutting tool.The metal impurities that are included in the cutting tool can comprise copper and iron, and other metal that has high mobility in silicon.Cooling agent that uses in the cutting technique and slurry also can be introduced metal impurities.Because the cause of their high mobility, under low temperature and high temperature, these metals can be diffused in the silico briquette very soon.Unless the inventor finds to remove these metals from the surface of silicon plate in the time of the enough weak points after finishing cutting technique, otherwise the inside that metal can be from the diffusion into the surface to silicon materials.Subsequently, metal can and accumulate in silicon plate surface from the silico briquette migration.Thereby when silicon electrode plate is made electrode assembly, and when being used in the plasma reactor in semi-conducting material processing, plasma environment can be removed metal impurities the exposed surface of electrode from silicon electrode plate.The metal impurities of removing can pollute the wafer of processing in plasma-reaction-chamber.
In case the inventor finds that also copper and/or other similar removable metal migration are outside the surface of silicon electrode plate, even handle the surface of silicon electrode plate after a while, to remove the metal impurities that accumulate in silicon face, this processing can not be removed the metal impurities in the silico briquette that is present in outside the surface region satisfactorily.Thereby the metal impurities that are present in the silico briquette can continue to move to silicon face and accumulate in silicon face from silico briquette, thereby are formed in the plasma process, can pollute the continuous source of the metal impurities of semiconductor substrate.
Richard L.Lane, Chapter 4, the silicon wafer preprocessing process has been described in " Silicon Wafer Preparation " (editor's such as William C.O ' Mara Handbook of Semiconductor SiliconTechnology, Noyes, 1990).These technologies are by being cut into wafer to silicon crystal, subsequently wafer are heat-treated so that the resistance coefficient standardization cut crystal.These technologies are included in heat-treats the chip etching step of carrying out afterwards to wafer.Etching step uses chemical etchant to remove the defect table surface layer of wafer.But etching step can not be removed the metal impurities that produce owing to cut into slices on wafer surface.Thereby the metal impurities that are retained in after the etching in the wafer can form pollutant sources.
The inventor finds after finishing cutting operation, utilization is embathed and surfactant solution, the known cleaning technique that cleans the silicon electrode plate after cutting into slices removes the metal impurities of attachment removal, for example copper and similar removable metal unsatisfactorily from the surface region of silicon electrode plate.In fact, even, can not remove metal impurities satisfactorily, because such cleaning technique can not remove the metal of attachment removal fully from the silicon electrode plate surface after silicon materials downcut silicon electrode plate, carrying out such cleaning technique immediately.Thereby, after cleaning, be retained on the silicon plate surface or near copper and the higher metal impurities of other mobility can be diffused in the silicon electrode plate.When the contaminated silicon electrode plate in surface was warmed to high temperature, for example in the annealing process of silicon plate, thereby perhaps in the process of fusion silicon plate and supporting member formation electrode assembly, this diffusion was enhanced.From the process of high temperature cooling silicon electrode plate, metal impurities can be moved to the surface region of silicon electrode plate from the silicon electrode plate main part.Thereby because the existence of metal impurities in the silicon electrode plate, the quality of the electrode of producing with silicon electrode plate is inconsistent.
In addition, in the PLASMA PROCESSING of wafer, metal remained impurity can be removed from electrode, thereby pollutes wafer, as mentioned above.So, can not have satisfactory performance with the silicon device of contaminated wafer manufacturing.For example, be reported in the silicon solar cell, copper, chromium, iron, titanium and vanadium are " life-span killer " impurity, and for 10% device efficiency, the maximum acceptable concentration level is from about 10
13～10
15Atom/cubic centimetre, and under the concentration that is higher than about 10ppb (1,000,000,000/), should from silicon materials, remove.Referring to C.R.M.Grovenor, Microelectronic Materials, 452-453 page or leaf.Therefore, silicon electrode plate preferably comprises these metals of low concentration, so that metal can not be introduced in the silicon substrate that is used to form this silicon device.
The inventor finds that the conditioned reaction chamber is removed copper and other metal of rapid diffusion in silicon unsatisfactorily from silicon electrode plate by being placed in the reative cell and handling plasma reactor to prefabricated (dummy) semiconductor wafer.Its reason is that metal impurities are arranged in the silicon body of electrode, in the process of using electrode processing matrix, can be diffused into the exposed surface of electrode continuously.
In view of above-mentioned discovery, the technology of producing the low silicon electrode of metals content impurity is provided, described metal impurities are characterised in that the mobility height in silicon, and are silicon electrode and silicon substrate, for example objectionable in the semiconductor wafer.Silicon electrode can be used at semiconductor processing equipment, for example forms the metal impurities level that reduces in plasma etch chamber and the plasma deposition chamber.
An illustration embodiment of Fig. 2 graphic extension silicon electrode sub-assembly 40.Silicon electrode sub-assembly 40 comprises and is combined in support ring 44, for example the conductive silicon electrode (or silicon plate) 42 on graphite or the carborundum support ring.Silicon electrode 42 is preferably straight, but its thickness also can be inhomogeneous.For example, in certain embodiments, the thickness of silicon electrode 42 is about 1/4 inch.If desired, electrode can be thicker.Thick electrode be about 0.3～1 inch thick.Silicon electrode sub-assembly 40 preferably is equipped with the spray nozzle type electrode of a plurality of exhaust passages that keep at a certain distance away.Passage has and is suitable for required flow velocity and distribution, sends handling gas into size and little sectional hole patterns in the Processing Room.Electrode can be the electrode of power supply or the electrode of ground connection.Handling gas can be excited by silicon electrode sub-assembly 40, so that in the reative cell, forms plasma below the silicon electrode sub-assembly.
By any appropriate bond material (bonding material), can be in the same place silicon electrode 42 and support ring 44 in conjunction with (bond).Best, utilize elastomeric material, silicon electrode 42 and support ring 44 are combined.Combined process is the technology described in the common U.S. Patent No. of transferring the possession of 6376385 preferably.For example, resilient engagement place (elastomeric joint) can comprise compatible with vacuum environment, and the appropriate polymeric material of heat resistanceheat resistant degraded under the high temperature that produces during the plasma process.
The mating surface of silicon electrode 42 and supporting member 44 can be plane or on-plane surface.On the other hand, can delineate the profile of described mating surface, so that form interlocking and/or self-alignment structure.
In order to realize the resilient engagement of good quality, before bond material is applied to mating surface, the elastomer-bonded of preferably hardening material.For example, can under room temperature or high temperature, in vacuum environment, make the elasticity bond material stand vibration.
The elasticity bond material can be applied at least one mating surface of silicon electrode 42 and supporting member 44.After using bond material, bond material can harden.By the compression fit face, can assemble silicon electrode 42 and supporting member 44, and in cohesive process, can exert pressure at joint.
Can be in suitable arbitrarily temperature with under appropriate arbitrarily environment, the curing elastic bond.For example, can be placed on electrode assembly 40 in the baking oven, and be heated to the curing that to quicken bond, and can in silicon electrode or supporting member, not cause the temperature of undue thermal stress.For above-mentioned electrode and supporting member, preferably keep below 60 ℃, appropriate time of 45～50 ℃ temperature for example, for example 3～5 hours.Be cured at bond, thereby form after the elastomeric joint cooling electrode sub-assembly.
Fig. 3 illustrates another illustration embodiment of silicon electrode (or battery lead plate) 50.As described in the common U.S. Patent No. of transferring the possession of 6391787, silicon electrode 50 comprises upper surface 52 and comprises the lower surface 54 of a step 56 that this patent is contained in this as reference integral body.Step 56 is set, so that be controlled in the PLASMA PROCESSING, the density of the plasma that the contiguous lower surface that exposes 54 forms.The thickness of silicon electrode 50 is about 0.25 inch or 0.33 inch or bigger.
Fig. 4 graphic extension is installed in the silicon electrode 50 in the parallel-plate plasma process equipment 60.Plasma processing device 60 comprises base supports 62, is arranged in the electrostatic chuck (chuck) 64 on the base supports 62, is bearing in the matrix 66 on the electrostatic chuck, for example semiconductor wafer, and edge ring 68.
The following describes the methodology that produces silicon electrode and silicon electrode sub-assembly.Downcut the silicon plate from silicon materials.Silicon materials are single crystal silicon material preferably, and described single crystal silicon material has uniform wear, thereby increases the ability in life-span, and can be minimum or do not have under the situation of particulate performance and work.Silicon materials can be to mix or undoped material.For example, but silicon materials doped with boron, phosphorus or other appropriate dopant arbitrarily, so that required electrical property is provided.The crystal orientation of silicon plate is unrestricted, and silicon electrode can have (100), (111) or (110) crystal face.
Preferably, cut the monocrystalline silicon blank, thereby form the monocrystalline silicon plate, produce silicon electrode by by grinding and cutting (abrasive cutting).Slice process general using cutting blade.For example, cutting blade can comprise steel, and the steel outside has Brass coating.In the slicing processes of silicon blank, because the cause of wearing and tearing, coating can be removed from blade.Normally used cooling agent, lubricant and slurry also can cause from blade removal metal in the cutting, and introduce impurity.The metal of removing can be attached on one or more surfaces of silicon plate, especially in the cutting process, directly on the cutting surface of contactor blade.
As mentioned above, on the arbitrary surfaces of silicon plate, metal impurities, for example the existence of copper is undesirable, because such metal is pollutant sources, can reduce the quality of silicon plate.In addition, when the silicon plate is loaded in the silicon electrode sub-assembly, and in semiconductor machining, when using in plasma reactor, metal impurities are formed on the pollutant sources of the semiconductor substrate of processing in the plasma reactor.Therefore, be preferably in cutting after, the content of the lip-deep metal impurities of silicon plate is reduced to desirable low-level so that overcome these problems.
By obtaining at metal to be enough to be diffused into too far before the enough time in the silicon body (bulk), handle the silicon plate, eliminate the one or more lip-deep metal impurities of silicon plate, can solve the problem of metallic pollution.Be preferably in and finish after the sectioning, when metal impurities are located substantially in the surf zone of silicon plate, remove metal impurities from the silicon plate.By handling the silicon plate, removing a part that comprises surface region at least, thereby remove the metal impurities that are included in the surface region, alleviate after a while in semiconductor fabrication processes, move to silicon plate surface, form the problem of metal impurities of the pollutant sources of processed semiconductor wafer.
Therefore, because solid-state diffusion is the process that depends on the time, therefore be preferably in from silicon materials, for example silicon blank downcuts after the silicon plate, carries out treatment step immediately.Be preferably in copper and/or in silicon, have and obtain to be enough to be diffused into outside the surf zone of silicon plate, and the removal that arrives metal impurities becomes before enough time of the degree of depth of problem, carry out described processing with similarly ambulant other metal impurities of copper.Described other metal outside the copper removal can comprise one or more in zinc, titanium, vanadium, chromium, manganese, iron, cobalt, the nickel etc., depends on the composition of the cutting tool that is used to cut the silicon plate, and in the slicing processes, the existence in other minor impurity source.Other metal impurities can comprise alkali metal, for example comprise calcium, potassium and sodium.Because copper has very high mobility in silicon, therefore handle the silicon plate, fully remove the copper that is present in the surf zone and also can remove effectively and in silicon, have the same high mobility or than Hypomobility with copper, and and copper be present in other metal in the surf zone together.
For example, in the processing procedure, the thickness of the surf zone of removable section silicon plate can reach about 25 microns at least, preferably reaches at least about 100 microns.Described processing also can be removed has different-thickness, for example less than 25 microns, or greater than 100 microns surf zone.By handling silicon electrode plate, can remove surf zone with such thickness with chemical solution.Chemical solution is handled and is comprised that the cut surface that makes the silicon plate at least contacts with chemical solution.Best, the whole outer surface of silicon plate is contacted with chemical solution, thereby can also remove any metal impurities on the wafer surface that is attached to other position except that cut surface.
Chemical solution is handled and can be comprised in the silicon plate immersion chemical solution.On the other hand,, for example spray, can be coated onto chemical solution on the silicon plate of select location on silicon plate surface by any other appropriate methods.In addition, also can use chemico-mechanical polishing (CMP).
Chemical solution can have the arbitrarily appropriate chemical composition of the surf zone that can remove the silicon plate at least.The etchant composition, the etching process of etch-rate and etching silicon is well known in the art, for example as at W.Kern and C.A.Deckart, Chapter V-1, " ChemicalEtching " (J.L.Vossen and W.Kern edit, Thin Film Processes, AcedemicPress, Inc., London, 1978) described in, the document is contained in this as reference integral body.For example, chemical solution can be to comprise hydrofluoric acid (HF); Nitric acid (HNO
3) and the mixture of HF; HNO
3And HF, and optional acetic acid (CH
3COOH) mixture (referring to U.S. Patent No. 6376977); HF, HNO
3, CH
3COOH and NaClO
2Mixture; HF, HNO
3, CH
3COOH and HClO
4Mixture; HF, HNO
3And NaNO
2Mixture; HF, CH
3COOH and KMnO
4Mixture; HF and NH
4The mixture of F; And H
2The acid solution of the mixture of O, HF and NaF.
At Semiconductor IntegratedCircuit Processing Technology, described in the 249-251 page or leaf, comprise 3 parts of HF, 5 parts of HNO as W.R.Runyan and K.E.Bean
3, 3 parts of CH
3The mixture of COOH has about 25 microns/minute room temperature silicon etch rate, comprises 2 parts of HF, 15 parts of HNO
3, 5 parts of CH
3The mixture of COOH has about 3.5～5.5 microns/minute average room temperature silicon etch rate, and (all umbers are volume parts; 49%HF, 70%HNO
3, 100%CH
3COOH).According to these etch-rates, last mixture is used in about 1 minute to be removed silicon electrode plate thickness and is about 25 microns surf zone, removes the about 100 microns surf zone of thickness in about 4 minutes.Second kind of mixture provides slower silicon to remove speed, thereby removes the material of equal number, needs the longer processing time.The concentration of acid solution can be adjusted, and with the removal speed of control silicon and metal impurities, thereby can implement to handle in the processing time that requires.
On the other hand, chemical solution can be an alkaline solution, for example comprises ammonium hydroxide, the one or more solution in NaOH and the potassium hydroxide.Can add one or more suitable chelated acids in this chemical solution, for example ethylenediamine tetra-acetic acid (EDTA) etc. is removed metal impurities so that strengthen from the silicon plate.
Can select the concentration of chemical solution, solution temperature, pH and other parameter are so that realize the removal speed of required plane domain.Make the silicon plate contact the regular hour, so that remove the required part of silicon plate effectively with chemical solution.
Described processing is preferably in the surface of silicon plate, realizes the required low concentration of copper and aforesaid other metalloid.For example, preferably, described processing can be reduced to the concentration of the copper on silicon plate surface less than about 100 * 10
10Atom/square centimeter is preferably less than about 10 * 10
10Atom/square centimeter.Preferably, described processing can also be reduced to other the removable concentration of metal that comprises zinc, titanium, vanadium, chromium, manganese, iron, cobalt and nickel less than about 100 * 10
10Atom/square centimeter is preferably less than about 10 * 10
10Atom/square centimeter.
Processed at the silicon plate, be present in after one or more lip-deep metal impurities thereby remove, towards clear silicon plate, thereby remove residual chemical solution arbitrarily.The most handy high-purity deionized water flushing silicon plate is so that remove all chemical solutions from the silicon plate fully.
After the flushing, can be according to using further machine silicon plate.Optionally, can be to the annealing of the silicon plate after the flushing, so that obtain required electrical property.Can in oxygen-containing atmosphere, carry out annealing in process, so that the oxygen of desired concn is introduced in the silicon plate.In general, anneal being higher than under about 600 ℃ temperature.Because before annealing, the silicon plate is processed, therefore may be present in the metal impurities in the silicon plate, for example the concentration of copper is very low, thereby has overcome from the process of annealing temperature cooling silicon plate, and these impurity accumulate in the problem on silicon plate surface in a large number.
But the machine silicon plate produces required final silicon plate structure subsequently.For example, be loaded in the preferred embodiment of spray nozzle type electrode assembly at the silicon plate, by any suitable technology, laser drill for example, ultrasonic drillings etc. can form a plurality of exhaust passages in the silicon plate.In addition, can in the silicon plate, form installing hole.
The silicon plate can be machined into required surface smoothness.Be preferably in the silicon plate and form the exhaust passage, after installing hole and/or the further feature, carry out such processing, cutting and/or form aperture and the surface damage that on silicon plate surface, produces thereby described processing can be removed.For example, available a series of sequential steps comprises polishing, etching, polishing and cleaning processing silicon plate, thereby removes surface damage, and obtains required surface smoothness.Optionally, can use other processing step to obtain required final silicon plate.
After producing required final silicon plate, by above-mentioned illustration assembly technology, can be the silicon plate electrode assembly of packing into, for example in the electrode assembly shown in Fig. 2 40.On the other hand, the silicon plate can be processed to the step electrodes plate, for example the battery lead plate shown in Fig. 3 50.
Silicon electrode can be used on the various different plasma atmosphere that are used for etching, deposition and other application.Typical etch chemistries comprises that for example chlorine-containing gas includes, but is not limited to Cl
2, HCl and BCl
3Bromine-containing gas includes, but is not limited to bromine and HBr; Oxygen-containing gas includes, but is not limited to O
2, H
2O and SO
2Fluoro-gas includes, but is not limited to CF
4, CH
2F
2, NF
3, CH
3F, CHF
3And SF
6With inert gas and other gas, include, but is not limited to He, Ar and N
2According to required plasma, can in appropriate arbitrarily mixture, use these and other gas.The plasma reactor etch condition of work of illustration is as follows: about 25 ℃～90 ℃ bottom electrode temperature; The reative cell pressure of about 0mTorr～500mTorr; The etching gas flow rate of 10sccm～about 1000sccm; With for the 200mm wafer, the current electrode power of 0Watts～about 3000Watts, for the 300mm wafer, the current electrode power of about 0Watts～6000Watts.
Silicon electrode can be used in the appropriate arbitrarily plasma reactor.For example, silicon electrode can be used on double frequency confined plasma reactor, for example can be from Lam Research Corporation ofFremont, and the Exelan that California obtains
TMIn the Processing Room.In a preferred embodiment, can use in density and high density plasma reactor.Those skilled in the art can be familiar with the illustration plasma etch reactor that above-mentioned reative cell just wherein can use silicon electrode.Silicon electrode can be used on any etch reactor (for example metal etch reactor) or need to reduce in the semiconductor processing equipment of other type of metallic pollution of wafer.
Above-mentioned silicon parts has reduced the performance to silicon parts, and to silicon substrate, for example the concentration of the copper that silicon wafer is harmful and other removable metal impurities.Thereby silicon partly has higher quality.In addition, by in semiconductor processing equipment, using this silicon parts, can reduce metal impurities, for example copper and the pollution basic of other similar removable metal impurities to the semiconductor of in equipment, processing.
Though with reference to specific embodiments of the invention, describe the present invention in detail, but to one skilled in the art, under the situation of the scope that does not break away from accessory claim, obviously can make variations and modifications, and can adopt the various schemes that are equal to.
Claims (5)
1, a kind of silicon electrode of semiconductor processing equipment, described silicon electrode comprises the silicon plate that comprises the cut surface that is exposed to plasma, wherein on the cut surface of silicon plate, the concentration that is selected from copper, zinc, titanium, vanadium, chromium, manganese, iron, cobalt, nickel and alkali-metal at least a element is less than about 100 * 10
10Atom/square centimeter.
2, according to the described silicon electrode of claim 1, wherein on the cut surface, the concentration of copper is less than about 10 * 10
10Atom/square centimeter.
3, according to the described silicon electrode of claim 1, wherein said silicon electrode is straight spray nozzle type electrode or step-like spray nozzle type electrode.
4, a kind of silicon electrode sub-assembly that comprises according to the described silicon electrode of claim 1.
5, according to the described silicon electrode sub-assembly of claim 4, also comprise the supporting member that utilizes resilient engagement thing and silicon to harden and close.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37348902P | 2002-04-17 | 2002-04-17 | |
| US60/373,489 | 2002-04-17 | ||
| US10/247,722 | 2002-09-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038112825A Division CN100382230C (en) | 2002-04-17 | 2003-03-21 | Silicon parts for plasma reaction chambers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101241845A true CN101241845A (en) | 2008-08-13 |
Family
ID=39933237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200810083894XA Pending CN101241845A (en) | 2002-04-17 | 2003-03-21 | Silicon parts for plasma reaction chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111194246A (en) * | 2017-10-05 | 2020-05-22 | 朗姆研究公司 | Electromagnetic casting system comprising a furnace and a mould for producing silicon tubes |
-
2003
- 2003-03-21 CN CNA200810083894XA patent/CN101241845A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111194246A (en) * | 2017-10-05 | 2020-05-22 | 朗姆研究公司 | Electromagnetic casting system comprising a furnace and a mould for producing silicon tubes |
| CN111194246B (en) * | 2017-10-05 | 2022-04-26 | 朗姆研究公司 | Electromagnetic casting system comprising a furnace and a mould for producing silicon tubes |
| US11534819B2 (en) | 2017-10-05 | 2022-12-27 | Lam Research Corporation | Electromagnetic casting systems including furnaces and molds for producing silicon tubes |
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Application publication date: 20080813 |