CN101226921B - Substrate capable of detecting connection point thickness and detecting method thereof - Google Patents
Substrate capable of detecting connection point thickness and detecting method thereof Download PDFInfo
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- CN101226921B CN101226921B CN2008100743225A CN200810074322A CN101226921B CN 101226921 B CN101226921 B CN 101226921B CN 2008100743225 A CN2008100743225 A CN 2008100743225A CN 200810074322 A CN200810074322 A CN 200810074322A CN 101226921 B CN101226921 B CN 101226921B
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Abstract
The invention discloses a substrate capable of detecting thickness of contact points and a detecting method thereof. The substrate capable of detecting thickness of contact points at least comprises a dielectric layer, a first metal layer and a second metal layer, wherein the first metal layer is formed on the upper surface of the dielectric layer, the first metal layer is provided with a circuit area and a testing area, the circuit area is provided with a plurality of contact points, the second metal layer is formed on the lower surface of the dielectric layer, the second metal layer is provided with a hollowed-out area, and the hollowed-out area is aligned to the testing area of the first metal layer to prevent obstruction when detesting the testing area.
Description
Technical field
The present invention relates to a kind of substrate, particularly a kind of substrate that detects connection point thickness.
Background technology
Contact on the substrate of existing FCBGA and CSP packaging structure designs for copper contact, and meeting produces reaction and forms the golden altogether phenomenon of tin copper after copper contact and the tin ball bond, and time and temperature can cause the phenomenon aggravation of gold altogether of tin copper, make copper contact be consumed and cause the bond strength of contact and substrate to weaken, cause electronic product to lose efficacy the most at last, therefore must detect the thickness of copper contact earlier, known copper contact detection mode is destructive the detection, it is to measure with the substrate section, yet the detection time of the destructive detection mode of this kind is longer, and the measurement error is bigger, and can damage substrate.
Summary of the invention
Main purpose of the present invention is to provide a kind of substrate that detects connection point thickness, it mainly comprises dielectric layer, the first metal layer and second metal level, this dielectric layer has upper surface and lower surface, this the first metal layer that includes line areas and test section is formed at this upper surface of this dielectric layer, this line areas has a plurality of contacts, this second metal level with vacancy section is formed at this lower surface of this dielectric layer, and this vacancy section is aimed at this test section.Thickness by detecting this test section to be learning the thickness of this contact, and this vacancy section of this second metal level causes interference can prevent to detect this test section of this first metal layer the time.
Another object of the present invention is to provide a kind of substrate that detects connection point thickness, wherein this test section is positioned at this line areas outside, and this test section is positioned at the corner of this first metal layer, so can keep the integrality of base plate line and not destroy the structure of this substrate.
Mainly comprise first dielectric layer, the first metal layer and second metal level according to a kind of substrate that detects connection point thickness of the present invention, this first dielectric layer has upper surface and lower surface, this the first metal layer is formed at this upper surface of this first dielectric layer, this the first metal layer includes line areas and test section, this line areas has a plurality of contacts, this second metal level is formed at this lower surface of this first dielectric layer, and this second metal level has first vacancy section, and this first vacancy section is aimed at this test section.
Description of drawings
Fig. 1 is a kind of schematic cross-section that detects the substrate of connection point thickness according to the present invention's one specific embodiment.
Fig. 2 is the top view according to the first metal layer of the substrate of the detected connection point thickness of the present invention's one specific embodiment.
Fig. 3 is the top view according to second metal level of the substrate of the detected connection point thickness of the present invention's one specific embodiment.
Fig. 4 is a kind of partial cross section schematic diagram that detects the substrate of connection point thickness according to another specific embodiment of the present invention.
Fig. 5 is the top view according to the 3rd metal level of the substrate of the detected connection point thickness of another specific embodiment of the present invention.
Fig. 6 is the top view according to the welding resisting layer of the substrate of the detected connection point thickness of the present invention's one specific embodiment.
Fig. 7 is for detecting the flow chart of the connection point thickness of this substrate according to the present invention's one specific embodiment with X-ray thickness gauge.
Description of reference numerals
1 provides X-ray thickness gauge
2 provide substrate, and this substrate comprises line areas and test section
3 measure this test section with X ray
100 can detect substrate 110 first dielectric layers of connection point thickness
111 upper surfaces, 112 lower surfaces
120 the first metal layers, 121 line areas
122 test sections, 123 contacts
130 second metal levels, 131 first vacancy sections
140 the 3rd metal levels, 141 second vacancy sections
150 second dielectric layers, 160 welding resisting layers
Embodiment
See also Fig. 1, disclose a kind of substrate 100 that detects connection point thickness according to a specific embodiment of the present invention, it includes first dielectric layer 110, the first metal layer 120 and at least one second metal level 130, this first dielectric layer 110 has upper surface 111 and lower surface 112, this the first metal layer 120 is formed at this upper surface 111 of this first dielectric layer 110, see also Fig. 1 and Fig. 2, in the present embodiment, the material of this first metal layer 120 is a copper, this the first metal layer 120 can be patterned copper layer, this the first metal layer 120 includes line areas 121 and test section 122, preferably, this line areas 121 is not electrically connected to this test section 122, this line areas 121 has a plurality of contacts 123, in the present embodiment, this test section 122 can be the triangle cursor position in order to the location of this substrate 100, see also Fig. 1 and Fig. 3, this second metal level 130 is formed at this lower surface 112 of this first dielectric layer 110, the material of this second metal level 130 can be copper, wherein this second metal level 130 can be bus plane, the line layer of ground plane or patterning, this second metal level 130 has first vacancy section 131, and this first vacancy section 131 is aimed at this test section 122.Perhaps, see also Fig. 4, in another embodiment, this substrate 100 can be multilayer wiring board, it includes at least one the 3rd metal level 140 and at least one second dielectric layer 150 in addition, sees also Fig. 4 and Fig. 5, and the 3rd metal level 140 has second vacancy section 141, this second vacancy section 141 is aimed at this test section 122, and this second dielectric layer 150 is between this second metal level 130 and the 3rd metal level 140.In addition, please consult Fig. 1,4 and 6 again, this substrate 100 can include welding resisting layer 160, and this welding resisting layer 160 is covered in this first metal layer 120 and manifests this test section 122 and this contact 123.The present invention is known longer the detection time that contact was produced with destructive detection mode measurement for solution, the measurement error reaches the problem of destroying substrate more greatly, therefore change the thickness that measures this contact 123 with X ray (X-ray) calibrator, thickness by detecting this test section 122 is with the thickness of this contact 123 of learning this line areas 121, and because this second vacancy section 141 of this first vacancy section 131 of this second metal level 130 and the 3rd metal level 140 is aimed at this test section 122, therefore in the time of can preventing to detect this test section 122 with X ray, the interference that causes because of this second metal level 130 and the 3rd metal level 140.Preferably, this test section 122 is positioned at this line areas 121 outsides, in the present embodiment, this test section 122 is positioned at the corner of this first metal layer 120, and this test section 122 be originally on this substrate 100 in order to the triangle cursor position of location, therefore can keep the circuit integrality of this substrate 100 and not destroy the structure of this substrate 100.
See also Fig. 7, according to a specific embodiment of the present invention, it detects the flow chart of these contact 123 thickness of this substrate 100 for X-ray thickness gauge, includes " X-ray thickness gauge is provided " step 1, " substrate is provided " step 2 and " measuring this test section with X ray " step 3 in regular turn.At first, in step 1, X-ray thickness gauge (figure does not draw) is provided, then, in step 2, please consult Fig. 1 again, substrate 100 is provided, this substrate 100 includes first dielectric layer 110, the first metal layer 120 and second metal level 130, this first dielectric layer 110 has upper surface 111 and lower surface 112, this the first metal layer 120 is formed at this upper surface 111 of this first dielectric layer 110, this the first metal layer 120 includes line areas 121 and test section 122, this line areas 121 has a plurality of contacts 123, this second metal level 130 is formed at this lower surface 112 of this first dielectric layer 110, this second metal level 130 has first vacancy section 131, this first vacancy section 131 is aimed at this test section 122, perhaps, see also Fig. 4, in another embodiment, this substrate 100 can be multilayer wiring board, it includes at least one the 3rd metal level 140 and at least one second dielectric layer 150 in addition, the 3rd metal level 140 has second vacancy section 141, this second vacancy section 141 is aimed at this test section 122, this second dielectric layer 150 is between this second metal level 130 and the 3rd metal level 140, at last, in step 3, measure this substrate 100 with X ray, it is that this substrate 100 is positioned in this X-ray thickness gauge, and measure the thickness of this test section 122 with X ray, with the thickness of this contact 123 of learning this substrate 100, wherein this test section 122 was in order to the triangle cursor position of location originally on this substrate 100.The present invention is nondestructive detection method, it measures the thickness of this test section 122 of this first metal layer 120 by X ray, to learn the thickness of this contact 123, and aim at this test section 122 because of this first vacancy section 131 of this second metal level 130, therefore can avoid 130 pairs of these X ray of this second metal level to cause interference.
Protection scope of the present invention is when looking being as the criterion that accompanying Claim defines, and any variation and modification that those skilled in the art are done without departing from the spirit and scope of the present invention all belong to protection scope of the present invention.
Claims (12)
1. substrate that can detect connection point thickness, it comprises:
First dielectric layer, it has upper surface and lower surface;
The first metal layer, it is formed at this upper surface of this first dielectric layer, and this first metal layer includes line areas and test section, and this line areas has a plurality of contacts; And
Second metal level, it is formed at this lower surface of this first dielectric layer, and this second metal level has first vacancy section, and this first vacancy section is aimed at this test section.
2. the substrate that detects connection point thickness as claimed in claim 1, wherein this test section is positioned at this line areas outside.
3. the substrate that detects connection point thickness as claimed in claim 1, wherein this test section is positioned at the corner of this first metal layer.
4. the substrate that detects connection point thickness as claimed in claim 1, it includes the 3rd metal level in addition, and the 3rd metal level has second vacancy section, and this second vacancy section is aimed at this test section.
5. the substrate that detects connection point thickness as claimed in claim 4, it includes second dielectric layer in addition, and this second dielectric layer is between this second metal level and the 3rd metal level.
6. the substrate that detects connection point thickness as claimed in claim 1, wherein this test section is three footmarks in order to the location.
7. detection method that can detect connection point thickness comprises step:
X-ray thickness gauge is provided;
Substrate is provided, and this substrate comprises:
First dielectric layer, it has upper surface and lower surface;
The first metal layer, it is formed at this upper surface of this first dielectric layer, and this first metal layer includes line areas and test section, and this line areas has a plurality of contacts; And
Second metal level, it is formed at this lower surface of this first dielectric layer, and this second metal level has first vacancy section, and this first vacancy section is aimed at this test section; And
X ray with this X-ray thickness gauge measures this substrate, to learn the thickness of this test section.
8. the detection method that detects connection point thickness as claimed in claim 7, wherein this test section is positioned at this line areas outside.
9. the detection method that detects connection point thickness as claimed in claim 7, wherein this test section is positioned at the corner of this first metal layer.
10. the detection method that detects connection point thickness as claimed in claim 7, wherein this substrate includes the 3rd metal level in addition, and the 3rd metal level has second vacancy section, and this second vacancy section is aimed at this test section.
11. the detection method that detects connection point thickness as claimed in claim 10, wherein this substrate includes second dielectric layer in addition, and this second dielectric layer is between this second metal level and the 3rd metal level.
12. the detection method that detects connection point thickness as claimed in claim 7, wherein this test section is three footmarks in order to the location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100743225A CN101226921B (en) | 2008-02-15 | 2008-02-15 | Substrate capable of detecting connection point thickness and detecting method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008100743225A CN101226921B (en) | 2008-02-15 | 2008-02-15 | Substrate capable of detecting connection point thickness and detecting method thereof |
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| Publication Number | Publication Date |
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| CN101226921A CN101226921A (en) | 2008-07-23 |
| CN101226921B true CN101226921B (en) | 2010-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100743225A Active CN101226921B (en) | 2008-02-15 | 2008-02-15 | Substrate capable of detecting connection point thickness and detecting method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1242511A (en) * | 1998-06-26 | 2000-01-26 | 西门子公司 | System and method for optically measuring dielectric thickness in semiconductor devices |
| US6512810B1 (en) * | 1999-08-10 | 2003-01-28 | Corus Aluminium Walzprodukte Gmbh | Method of analyzing a specimen comprising a compound material by x-ray fluorescence analysis |
| US6611576B1 (en) * | 2001-02-12 | 2003-08-26 | Advanced Micro Devices, Inc. | Automated control of metal thickness during film deposition |
| GB2439124A (en) * | 2006-06-16 | 2007-12-19 | Qinetiq Ltd | Electromagnetic Radiation Decoupler |
-
2008
- 2008-02-15 CN CN2008100743225A patent/CN101226921B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1242511A (en) * | 1998-06-26 | 2000-01-26 | 西门子公司 | System and method for optically measuring dielectric thickness in semiconductor devices |
| US6512810B1 (en) * | 1999-08-10 | 2003-01-28 | Corus Aluminium Walzprodukte Gmbh | Method of analyzing a specimen comprising a compound material by x-ray fluorescence analysis |
| US6611576B1 (en) * | 2001-02-12 | 2003-08-26 | Advanced Micro Devices, Inc. | Automated control of metal thickness during film deposition |
| GB2439124A (en) * | 2006-06-16 | 2007-12-19 | Qinetiq Ltd | Electromagnetic Radiation Decoupler |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2003-158044A 2003.05.30 |
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| CN101226921A (en) | 2008-07-23 |
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