CN101223616B - A contact element and a contact arrangement - Google Patents
A contact element and a contact arrangement Download PDFInfo
- Publication number
- CN101223616B CN101223616B CN2006800257495A CN200680025749A CN101223616B CN 101223616 B CN101223616 B CN 101223616B CN 2006800257495 A CN2006800257495 A CN 2006800257495A CN 200680025749 A CN200680025749 A CN 200680025749A CN 101223616 B CN101223616 B CN 101223616B
- Authority
- CN
- China
- Prior art keywords
- contact
- contact element
- metal
- described contact
- composite membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/027—Composite material containing carbon particles or fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/36—Contacts characterised by the manner in which co-operating contacts engage by sliding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2300/00—Orthogonal indexing scheme relating to electric switches, relays, selectors or emergency protective devices covered by H01H
- H01H2300/036—Application nanoparticles, e.g. nanotubes, integrated in switch components, e.g. contacts, the switch itself being clearly of a different scale, e.g. greater than nanoscale
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/0005—Tap change devices
- H01H9/0016—Contact arrangements for tap changers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01041—Niobium [Nb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Abstract
A contact element (1) for making an electric contact to a contact member (2) for enabling an electric current to flow between said contact element and said contact member comprises a body (3) having at least one contact surface thereof coated with a contact layer (4) to be applied against said contact member. The contact layer comprises a nanocomposite film having a matrix of amorphous carbon and crystallites of nano-size, i.e. with dimensions in the range of 1-100 nm, of at least one metal carbide embedded therein.
Description
Technical field
The present invention relates to a kind of contact element, be used for electrically contacting with contact member formation, make electric current between described contact element and described contact member, to flow, described contact element comprise have that at least one is coated with contact layer be suitable for reclining the main body of contact surface of contact member, the invention still further relates to a kind of slip Electical connector, promptly, a kind of Electical connector, in this device two be suitable for reclining the mutually contact surface that electrically contacts with foundation is being set up and/or is being interrupted and/or can slide relative to one another when keeping contact action.
Background technology
This contact element can have many different purposes, in this contact element, arrange contact layer, be used to form have a desirable properties with the electrically contacting of contact member, for example with respect to low-friction coefficient, low contact resistance and the high-wearing feature etc. of contact member material to be contacted.This application examples as be used for the wafer of one or more semiconductor device be formed for this semiconductor device contact, be used for setting up and interruption electrically contacts and is used for setting up and interruption electrically contacts at the insert type contact device at mechanical cutting switch (disconnector) and circuit breaker (breaker).This electric contacts that can set up sliding contact or Static Contact preferably has the main body of for example being made by copper or aluminium (body).Known, apply described main body with metal contact layer, to prevent the contact surface wearing and tearing and the corrosion of contact element.Yet, have been found that, the metal that is used for this contact layer so far presents and adheres to the lip-deep trend of the contact member that reclines with it easily, attempt to make contact element when contact member moves when applying tractive effort, this may cause the damage to the described near surface part of contact element and/or contact member, for example because the thermal coefficient of expansion of described contact element is different with variation of temperature with the thermal coefficient of expansion of described contact member, perhaps when described contact element and described contact member move relative to each other, may cause damage in sliding contact to the described near surface part of contact element and/or contact member.This problem is resolved by the contact surface of lubricating contact element and contact member with lubricator.This lubricant can be for oil base or fat base, and can be kollag, for example graphite etc.But, the poorly conductive of kollag, and when contact surface slides relative to one another, often be worn.
WO01/41167 discloses a kind of solution of the above problems, wherein described contact layer is designed to comprise the continuous film of stacked multielement material.
But, existence is with respect to the expectation of known contact element improved described contact element aspect several and need, described aspect for example is to have low contact resistance, high resistance to wear and the useful life that increases thus, or even lower friction, is used for reducing lubrication needs.
Summary of the invention
The purpose of this invention is to provide a kind of electric contacts, this electric contacts is improved with respect to known contact element by satisfying described needs to small part.
Described purpose of the present invention be by provide a kind of such as technical field part the contact element of qualification type realize, wherein said contact layer comprises nano composite membrane, this sodium rice composite membrane has amorphous carbon matrix and embeds nano-scale (that is 1～100nm size range) crystallite of at least a metal carbides in this matrix.
Having been found that this nanometer film has makes its utmost point be suitable as the character of this contact layer.This allows the character of corresponding on the interface of described contact layer and the described contact member or other contact layer Physical Match owing to amorphous carbon matrix and with respect to the resistivity that has only reduced contact layer for the metal carbides crystallite in the described amorphous carbon matrix of layer speech embedding of amorphous carbon.In addition, the resistance to wear of the metal carbides existence in the bonding phase (binding phase) of described matrix or amorphous carbon raising contact layer.This nano composite membrane also has the low potential of coefficient of friction for described contact member.
" matrix " in the disclosure should be interpreted as not only relating to the continuous principal phase of holding carbide particle.This carbon base body also can be second phase, or even discontinuous phase, and under opposite extreme situations, this matrix only is made up of a few atomic around the carbide particle.Therefore, matrix is interpreted as such bonding phase.
The heterogeneity of the metal carbides crystallite of amorphous carbon matrix and nano-scale makes certainly the ratio by initial change metal carbides and carbon base body come the optimization contact layer at the various intended purpose of contact element.The hardness of contact layer can improve along with the raising of the ratio of metal carbides and carbon base body, and the resistivity of contact layer can improve along with the ratio of metal carbides and carbon base body and reduce.Yet contact resistance can change along with the raising of this ratio.
According to one embodiment of the invention, described metal is a transition metal, i.e. the element of the periodic table of elements the 3rd～12 family.Have been found that this metal makes contact layer have fabulous character, especially aspect low contact resistance.The example that is highly suitable for the metal of described nano-size metal carbides is niobium and titanium.
According to another embodiment of the invention, described film only contains a kind of metal, is binary system.Verified, in order to obtain the destination properties of contact layer, it is just enough usually that only a kind of metal forms the metal carbides that are embedded in the described matrix of amorphous carbon.
According to another embodiment of the invention, described film comprises the nano-scale crystallite of the carbide of at least a second metal in addition.Advantageously this metal can be transition metal.The adding that has been found that this second metal has increased the character that makes contact layer and has satisfied in intended purpose possibility to the requirement of contact element.Sometimes, low-down contact resistance is more important than high resistance to wear, and is perhaps opposite, and this can realize by adding this second metal.The so-called metal carbide properties of nano composite membrane can be improved by adding this additional metals that forms carbide.
According to another embodiment of the invention, described crystallite has the size of the similar diameter (diameter-like) of 5～50nm.Verified, this size of crystal produces common desired particularly advantageous character in this class contact layer.
According to another embodiment of the invention, described matrix also comprises the 3rd other metal, the 3rd Metal Distribution in embed described matrix carbon and disperse with respect to described matrix carbon mutually in.This adding that does not form the metal of metal carbides will mainly change the character of described matrix, and the resistivity that can reduce described matrix also reduces the resistivity of whole contact layer thus.
Described the 3rd other metal advantageously is a transition metal, for example can be Ag.
According to another embodiment of the invention, described carbide crystallites contains the weak solid solution that forms or do not form the metal of carbide.The tendency that " weak " refers to described metal formation carbide is low.This metal is joined the carbon content that causes the carbide phase in the carbide reduce, and therefore improve the carbon content of matrix in mutually.This is because following true causing: this metal will be in conjunction with the metal of described at least a metal carbides, make described metal carbides metal can not in conjunction with former should in conjunction with the like that many carbon of situation, force some carbon to be separated out to enter matrix mutually and increase the amount of the carbon of matrix in mutually.This can may be that important mode influences machinery and electrical property to use for contact.Described metal weak or that do not form carbide is transition metal or Al or its combination of the periodic table of elements the 7th～12 family.Especially can use Al in conjunction with titanium.
According to another embodiment of the invention, described amorphous carbon matrix has the ratio of high sp2 key/sp3 key between the carbon atom of described amorphous carbon matrix, and described ratio is higher than 0.6.The so-called hydridization that it is characterized in that the amorphous carbon matrix of this height ratio makes more image-stone China ink of described matrix, rather than more resembles diamond, and this causes the situation higher conductivity lower than described ratio.Simultaneously, this matrix is softer, and this has improved the matching the when surface of the surface of described contact layer and described contact member pressed mutually.
According to another embodiment of the invention, the thickness of described film is 0.05～10 μ m, and this is suitable for great majority and uses.
According to another embodiment of the invention, described film is deposited on the described main body by using gas phase deposition technology, and described gas phase deposition technology can be physical vapor deposition (PVD) or chemical vapor deposition (CVD).Described film also can for example be formed on the described main body by sol-gel process by utilizing solwution method.
Another object of the present invention provides slip Electical connector a kind of as institute's define styles in the technical field part, and described device allows two contact surfaces against each other to move, and goes up the inconvenience that reduces above-mentioned discussion simultaneously largely.
According to the present invention, by being provided, this device with contact element according to the present invention realizes this purpose, described contact element is arranged as with contact member and forms the dry contact (dry contact) with low-friction coefficient, and described coefficient of friction is lower than 0.3, preferably is lower than 0.2.
The essential characteristic of this contact device and advantage are relevant with feature according to contact element of the present invention, and apparent by the above-mentioned discussion of this contact element.But, it is to be noted that " slip electrically contacts " is included in when setting up contact and/or disconnection contact and/or keeping contact action, forms all types of devices that electrically contact between two members that can move relative to each other.Therefore, it not only comprises the contact that the effect by drive member slides over each other, and also comprises having two contact elements that press mutually and the so-called Static Contact that relatively moves mutually because magnetostriction, thermal cycle and contact element material have that temperature difference between different thermal coefficient of expansions or the contact element different piece changes in time under contact condition.
According to one embodiment of the invention, described contact element and described contact member are suitable for facing with each other and force together setting up described the contact, described device can comprise be used for the described contact element of spring-loaded (spring-loading) with described contact member so that they are each other mutually by to form the described equipment that electrically contacts.
From the dependent claims of following description and other other advantage of the present invention and favourable feature as can be seen.
Description of drawings
Below with reference to accompanying drawing, specify embodiment of the present invention in the mode of embodiment.In the accompanying drawings:
Fig. 1 only schematically illustrates the electric contacts according to one embodiment of the invention.
Fig. 2 illustrates tradition contact and the figure of a kind of contact resistance that contacts according to the present invention to contact force.
Fig. 3 is the cross sectional representation of spiral contact-type (helical contacttype) electric contacts according to another embodiment of the invention.
Fig. 4 only schematically illustrate in the circuit breaker according to a kind of contact device of the present invention.
Fig. 5 only schematically illustrates the sliding contact device of the tap changer that is used for transformer according to an embodiment of the invention.
Fig. 6 only schematically illustrate be used for relay according to contact device of the present invention and
Fig. 7 is the partial cross section and the exploded view that are used for forming with semiconductor chip the device that electrically contacts according to another embodiment of the invention.
Embodiment
Only schematically illustrated a kind of the formation with contact member 2 of Fig. 1 electrically contacts, so that the contact element 1 that electric current can flow between contact element 1 and described contact member.Described contact element comprises main body 3, and it for example can be aluminium or copper, and has the contact surface that is posted by described contact member that at least one is coated with contact layer 4.The thickness of described contact layer 4 typically is 0.05～10 μ m, and for illustrative purposes, thickness shown in Figure 1 is exaggerated with respect to other size of described contact element and contact member.
Described contact layer 4 comprises nano composite membrane, and described nano composite membrane has amorphous carbon matrix and embeds nano-scale (that is 1～100nm size) crystallite of at least a metal carbides in this matrix.This has given contact layer above-mentioned premium properties.Described metal is preferably transition metal.The hydridization of amorphous carbon matrix (being how carbon combines with self in matrix) preferably is characterized in that having high sp2/sp3 ratio, and this makes more image-stone China ink of described matrix, rather than more resembles diamond.Can in nano composite material, add the 3rd component to change its character.It can be to be embedded in the additional metals that additional metals carbide in the matrix improves the performance of metal carbides by formation, maybe can be by be distributed in embed described matrix carbon and with respect to described matrix carbon disperse mutually in change the additional metals of composite material character.According to the purposes of described contact element, the character of whole contact structures can be passed through following process optimization:
1), changes the ratio of amorphous carbon matrix and metal carbides according to result as discussed above
2) particle diameter of change metal carbides crystallite, to change the specific insulation of contact layer, wherein in most of the cases, when particle diameter increased, specific insulation reduced
3), change the sp2/sp3 ratio of amorphous carbon matrix according to The above results
4), add second metal that forms carbon compound or do not form carbon compound, for example Ag according to The above results.
Can obtain to have the contact layer of following advantage thus:
A) low contact resistance in the contact load (power) of wide region
B) high-wearing feature
C) low friction
D) highly corrosion resistant
E) good high-temperature performance
F) regulate the big potential of various character as mentioned above
Fig. 2 illustrates advantage a), and contact resistance shown in it is to the figure of contact force, and A represents to plate the tradition contact of Ni packing ring, and B represents wherein to embed the nano composite membrane of the amorphous carbon matrix of nanocrystal NbC.Two kinds of all Ag measurements relatively of coating.Can clearly be seen that contact layer according to the present invention has significantly reduced contact resistance with respect to traditional contact layer in the contact load of wide region.What attract people's attention especially is that contact resistance is just much lower under low load.
As an example, what can mention is, nano composite membrane possible in the contact element of the present invention can be the Ti-C nano compound film, and this Ti-C nano compound film has the composition between 14 atom %Ti to the 57 atom %Ti, the about 0.2 μ m of thickness.These films contain and are embedded in the TiC crystallite of amorphous carbon in mutually.Pass between this two-phase ties up between 45 atom % to the 95 atom % amorphous C-C-phase and changes.In a specific embodiment, the thickness of nano composite membrane is 0.2 μ m, always consists of 53 atom %Ti and 47 atom %C.This film contains amorphous carbon matrix (carbon of wherein about 56 atom % is combined) and TiC crystal (wherein about 44% carbon is combined).The diameter average out to 13nm of crystallite.
Fig. 3 illustrates the example of contact device, wherein advantageously utilizes contact layer according to the present invention to apply at least one contact surface, has the self-lubricating dry contact of utmost point low-friction coefficient with formation.This embodiment relates to a kind of spiral contact device, the contact element 5 (for example spiral winding wire loop) that it has spring-loaded annular body form is suitable for setting up and keeping with first contact member 6 (for example inner sleeve or pin) and second contact member 7 (for example outer sleeve or pipe) electrically contacting.Contact element 5 is compressed under contact condition, at least the contact surface 11 of second contact member 7 that at least another contact surface 10 spring-loaded reclines of the contact surface 9 of first contact member 6 that reclines, and first contact element 5 with making its at least one contact surface 8 spring-loaded.According to this embodiment of the present invention, at least one in the contact surface 8～11 is coated with the contact layer that comprises nano composite membrane according to of the present invention wholly or in part.This spiral contact device for example is used for the circuit breaker of switching device.
Fig. 4 only schematically illustrates can how to be arranged in the circuit breaker 12 according to Electical connector of the present invention, described circuit breaker 12 has the low-friction film 13 of nano combined form membrane at least one contact surface of two contact elements 14,15, described nano composite membrane contains amorphous carbon matrix and the metal carbides nano-scale crystallite that is embedded in this amorphous carbon matrix, and described two contact elements 14,15 can move relative to each other and electrically contact and realize obviously opening circuit of contact element with foundation between two contact elements.
Fig. 5 schematically illustrates slip Electical connector according to another embodiment of the invention, wherein contact element 16 is moveable parts of the tap changer of transformer, be suitable for electrically contacting along second winding formation of contact 18 slips with transformer 17, therefore contact 18 forms contact member, is used for by the required voltage levvl of described transformer tap (tapping).Low-friction film 19 comprises the amorphous carbon matrix with metal carbides nano microcrystalline, is arranged on the contact surface of contact element 16 and/or on the contact member 18.By this way, contact element 16 can easily move along winding, keeps the low resistance contact to it simultaneously.
At last, Fig. 6 only schematically illustrates the contact device according to another embodiment of the invention that is used for relay 20, can provide for one or two contact surface of relative contact element 21,22 according to low-friction film 23 of the present invention, because described contact layer properties of materials, this will make that the wearing and tearing of contact surface are less, and make them corrosion-resistant.
Fig. 7 illustrated is used for forming with semiconductor element 24 a kind of device of excellent electric contact, but for the sake of clarity, stacked arrangement shows in the mode of apart in the drawings with the coarctate different component of high pressure that also described pressure preferably surpasses 1MPa, typically is 6-8MPa.Half part of each of described stacked structure all comprises the pond shape sheet (pool piece) 25 of Cu plate form, is used for being connected with semiconductor element formation.Each pond shape sheet all has nano compound film 26.The semi-conducting material of the semiconductor element for example thermal coefficient of expansion of Si, SiC and adamantine thermal coefficient of expansion and Cu has a great difference (Si is 2.2 * 10
6/ K, Cu are 16 * 10
-6/ K), when this means the temperature change when Cu plate 25 and semiconductor subassembly 24, it can laterally move toward each other.Make according to the low friction of film of the present invention and can omit pond shape sheet in the described lamination and other members between the semiconductor element, and the trend that moves mutually when remaining on thermal cycle, with the wearing and tearing of avoiding crackle in semiconductor element, occurring and/or avoiding described element contact surface.
Can find many other advantageous applications according to contact element of the present invention and slip Electical connector, do not departing under the basic thought situation of the present invention, these application will become apparent to those skilled in the art that as defined in the dependent claims.
It should be appreciated that, other transition metal may mention than above-mentioned those be more suitable for forming described nano-size metal carbides crystallite, to satisfy in the different application different requirements to contact layer.
Claims (28)
1. contact element, thereby being used for forming to electrically contact with contact member makes that electric current can be at described contact element and described contact member (2,6,7,18) flow between, described contact element (1,5,14,15,16,25) comprise main body (3), what described main body (3) had that at least one is coated with contact layer is suitable for reclining the contact surface of described contact member, and it is characterized in that: described contact layer (4) comprises nano composite membrane, described nano composite membrane has amorphous carbon matrix and embeds the nano-scale crystallite of at least a metal carbides in the described amorphous carbon matrix, and described nano-scale crystallite is of a size of 1～100nm.
2. the described contact element of claim 1 is characterized in that described metal is a transition metal, that is, and and the element of the periodic table of elements 3～12 families.
3. the described contact element of claim 2 is characterized in that described metal is niobium or titanium.
4. each described contact element of aforementioned claim is characterized in that described nano composite membrane comprises the metal carbides that formed by a kind of metal.
5. each described contact element in the claim 1～3 is characterized in that described nano composite membrane comprises the nano-scale crystallite of the carbide of at least a second metal in addition.
6. the described contact element of claim 5 is characterized in that described second metal is a transition metal.
7. each described contact element in the claim 1～3 is characterized in that described nano-scale crystallite has the size of the similar diameter of 5～50nm.
8. each described contact element in the claim 1～3 is characterized in that described matrix also comprises the 3rd other metal, described the 3rd Metal Distribution in embed described amorphous carbon matrix and disperse with respect to described amorphous carbon matrix mutually in.
9. each described contact element in the claim 1～3, it is characterized in that described nano composite membrane comprises the nano-scale crystallite of the carbide of at least a second metal in addition, and described matrix also comprises the 3rd other metal, described the 3rd Metal Distribution in embed described amorphous carbon matrix and disperse with respect to described amorphous carbon matrix mutually in.
10. the described contact element of claim 8 is characterized in that described the 3rd other metal is a transition metal.
11. the described contact element of claim 10 is characterized in that described the 3rd other metal is Ag.
12. each described contact element in the claim 1～3 is characterized in that described carbide nanometer size crystallite comprises the solid solution of the metal that does not form carbide or weak formation carbide.
13. the described contact element of claim 12 is characterized in that the described metal that does not form carbide or weak formation carbide is the transition metal or the Al of the periodic table of elements the 7th～12 family, or its combination.
14. each described contact element in the claim 1～3 is characterized in that having between the carbon atom of described amorphous carbon matrix the ratio of high sp2 key/sp3 key, described ratio is greater than 0.6.
15. each described contact element in the claim 1～3, the thickness that it is characterized in that described nano composite membrane are 0.05～10 μ m.
16. each described contact element in the claim 1～3 is characterized in that described nano composite membrane is deposited on the described main body by using gas phase deposition technology.
17. the described contact element of claim 16 is characterized in that described nano composite membrane is deposited on the described main body by physical vapor deposition (PVD) or chemical vapor deposition (CVD).
18. each described contact element in the claim 1～3 is characterized in that described nano composite membrane is formed on the described main body by solwution method.
19. the described contact element of claim 18 is characterized in that described nano composite membrane is formed on the described main body by sol-gel process.
20. slip Electical connector, promptly, a kind of two contact surfaces electrically contacting with foundation of wherein being suitable for against each other are at the contact device of setting up and/or disconnecting and/or can slide relative to one another when keeping described contact action, it is characterized in that described device has each described contact element (1 of aforementioned claim, 5,14,15,16,25), described contact element has and is set for the described nano composite membrane that forms the dry contact of low-friction coefficient with contact member, and described coefficient of friction is less than 0.3.
21. the described device of claim 20, wherein said coefficient of friction is less than 0.2.
22. the described device of claim 20 is characterized in that described contact member (2) also has the contact surface that is coated with the aforementioned contact layer that comprises described nano composite membrane.
23. according to claim 20 or 22 described devices, it is characterized in that owing to be suitable for different to set up the described described contact element (1) that electrically contacts against each other with the material coefficient of thermal expansion coefficient of the surface portion of described contact member (2), when the temperature change of described contact element and described contact member, the surface of described contact element (1) and described contact member (2) can move relative to each other with contact condition.
24. contact device according to claim 23 is characterized in that described contact element (1) and described contact member (2) are suitable for facing with each other extruding to set up described the contact.
25., it is characterized in that described device comprises and be used for the described contact element of spring-loaded (5) and described contact member (6) makes it against each other to form the described equipment that electrically contacts according to each described device among the claim 20-22.
26. according to each described device among the claim 20-22, it is characterized in that described device is suitable for setting up and electrically contacting being used for the tap changer of transformer (17), be used to form contact to the different winding wire turns of described transformer.
27. according to each described device among the claim 20-22, it is characterized in that described contact element and described contact member belong to two parts of mechanical chopper, described two parts can move each other and separate to disconnect two terminal.
28. according to each described device among the claim 20-22, it is characterized in that described contact element and described contact member belong to the parts (21 that can move relative to each other in the relay (20), 22), when the operation of described relay, can set up between described contact element and the described contact member and electrically contact.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE05016670 | 2005-07-15 | ||
| SE0501667-0 | 2005-07-15 | ||
| SE0501667A SE528908C2 (en) | 2005-07-15 | 2005-07-15 | Electric contact element for semiconductor device, has body with contact surface coated with contact layer having nanocomposite film with matrix of amorphous carbon, where metal carbide is embedded into contact layer |
| US79652106P | 2006-05-02 | 2006-05-02 | |
| US60/796,521 | 2006-05-02 | ||
| PCT/SE2006/000769 WO2007011276A1 (en) | 2005-07-15 | 2006-06-22 | A contact element and a contact arrangement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101223616A CN101223616A (en) | 2008-07-16 |
| CN101223616B true CN101223616B (en) | 2010-10-13 |
Family
ID=37728135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800257495A Expired - Fee Related CN101223616B (en) | 2005-07-15 | 2006-06-22 | A contact element and a contact arrangement |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4938774B2 (en) |
| CN (1) | CN101223616B (en) |
| ES (1) | ES2476841T3 (en) |
| SE (1) | SE528908C2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5306242B2 (en) * | 2010-01-12 | 2013-10-02 | 株式会社東芝 | Gas insulated switchgear |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183622A (en) * | 1996-01-29 | 1998-06-03 | 董元源 | Electric copper-based silverless contact composite material with high flow welding resistance |
| US6350294B1 (en) * | 1999-01-29 | 2002-02-26 | Louis Renner Gmbh | Powder-metallurgically produced composite material and method for its production |
| CN1519991A (en) * | 2002-12-27 | 2004-08-11 | ������-�ֿ˹����ɷ�����˾ | Composite material for mfg. electrical contacts and process for its prepn. |
| EP0863521B1 (en) * | 1997-03-07 | 2006-05-10 | Kabushiki Kaisha Toshiba | Contacts material |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3826453B2 (en) * | 1996-09-10 | 2006-09-27 | 住友電気工業株式会社 | Hard carbon film |
| SE9904350D0 (en) * | 1999-11-30 | 1999-11-30 | Abb Ab | A contact element and a contact arrangement |
| DE10104611A1 (en) * | 2001-02-02 | 2002-08-14 | Bosch Gmbh Robert | Device for the ceramic-like coating of a substrate |
| JP2003231203A (en) * | 2001-08-21 | 2003-08-19 | Toshiba Corp | Carbon film coated member |
-
2005
- 2005-07-15 SE SE0501667A patent/SE528908C2/en unknown
-
2006
- 2006-06-22 JP JP2008521352A patent/JP4938774B2/en not_active Expired - Fee Related
- 2006-06-22 CN CN2006800257495A patent/CN101223616B/en not_active Expired - Fee Related
- 2006-06-22 ES ES06769579.1T patent/ES2476841T3/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183622A (en) * | 1996-01-29 | 1998-06-03 | 董元源 | Electric copper-based silverless contact composite material with high flow welding resistance |
| EP0863521B1 (en) * | 1997-03-07 | 2006-05-10 | Kabushiki Kaisha Toshiba | Contacts material |
| US6350294B1 (en) * | 1999-01-29 | 2002-02-26 | Louis Renner Gmbh | Powder-metallurgically produced composite material and method for its production |
| CN1519991A (en) * | 2002-12-27 | 2004-08-11 | ������-�ֿ˹����ɷ�����˾ | Composite material for mfg. electrical contacts and process for its prepn. |
Non-Patent Citations (1)
| Title |
|---|
| JP昭57-47865A 1982.03.18 |
Also Published As
| Publication number | Publication date |
|---|---|
| SE0501667L (en) | 2007-01-16 |
| ES2476841T3 (en) | 2014-07-15 |
| JP4938774B2 (en) | 2012-05-23 |
| SE528908C2 (en) | 2007-03-13 |
| JP2009501420A (en) | 2009-01-15 |
| CN101223616A (en) | 2008-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1868096B (en) | Coatings of Mn+1AXn material for electrical contact elements | |
| US7709759B2 (en) | Contact element and a contact arrangement | |
| US8487201B2 (en) | Contact element and a contact arrangement | |
| JP2005529242A (en) | Components for electrical connectors and metal strips therefor | |
| BR102014029992B1 (en) | ELECTRICAL CONTACT MATERIAL AND METHOD TO PREPARE THE SAME | |
| JP2008240785A (en) | Slide member | |
| EP2984207A1 (en) | Hydrophobic porous hard coating with lubricant, method for making and use of same | |
| EP1234315B1 (en) | A contact element and a contact arrangement | |
| CN101223616B (en) | A contact element and a contact arrangement | |
| US10199788B1 (en) | Monolithic MAX phase ternary alloys for sliding electrical contacts | |
| CN103085395B (en) | Cu-Ti2 AlC functionally gradient material and preparation method thereof | |
| CN1338527A (en) | Copper-tungsten carbide contact material | |
| ES2607792T3 (en) | Contact element and contact arrangement | |
| Isberg et al. | Coatings of Mn+ 1Axn material for electrical contact elements | |
| CN200956312Y (en) | ZrB Ag nano composite-plating-layer high-low-voltage contactor contact | |
| WO2009080372A1 (en) | A bulk electric conductive member | |
| JP2005336364A (en) | Self-lubricating composite material and method for producing the same | |
| SE1100035A1 (en) | Electrical contact element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101013 Termination date: 20190622 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |