CN101222026B - Organic LED display device and manufacture method thereof - Google Patents
Organic LED display device and manufacture method thereof Download PDFInfo
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- CN101222026B CN101222026B CN200810056677.1A CN200810056677A CN101222026B CN 101222026 B CN101222026 B CN 101222026B CN 200810056677 A CN200810056677 A CN 200810056677A CN 101222026 B CN101222026 B CN 101222026B
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Abstract
The present invention relates to a kind of organic LED display device and manufacture method thereof, wherein OLED display includes the first electrode, the first transport layer, luminescent layer, the second transport layer and the second electrode that are sequentially formed on substrate, being formed with recombination region between luminescent layer and described second transport layer, the surface of the luminescent layer contacted with recombination region and the surface of the second transport layer contacted with recombination region are the three-dimension curved surface with fluctuating. Manufacture method includes: form the first electrode, the first transport layer and luminescent layer on substrate; The method adopting evaporation, scraping, chemical etching or physical etch and impressing, prepares into the three-dimension curved surface with fluctuating by the surface of luminescent layer; Form the second transport layer; Form the second electrode. The present invention, under not increasing the premise of driving voltage and light emitting layer thickness, increases the volume of recombination region, and then increases the probability of electronics and hole-recombination, improves the luminosity of OLED display.
Description
Technical field
The present invention relates to a kind of Organic Light Emitting Diode (OrganicLightEmittingDiode, hereinafter referred to as: OLED) display device and manufacture method thereof, particularly relate to the OLED display that surface is the three-dimension curved surface with fluctuating and the manufacture method thereof of a kind of luminescent layer and the second transport layer.
Background technology
OLED Display Technique is a kind of novel flat panel display, there is colour gamut efficient, wide frivolous, highlighted and respond the advantages such as quick, the structure of its display device is made up of pair of electrode layers (including two electrodes of negative and positive) and more than one organic layer, and wherein organic layer sandwiched forms multi-laminate structure between two electrodes. After applying suitable bias between anodic-cathodic, cause luminescent layer stimulated luminescence by carrier (electronics and hole) injection, transmission and compound, and then reach the purpose of display.
Above-mentioned electronics and hole are respectively after corresponding electrode injection, the a certain region arrived in multi-laminate structure by the transmission of organic layer or stop carries out compound, this region is called recombination region, the position of recombination region is usually located near different organic interface (organic heterojunction), formed with cross section for bottom surface, having certain thickness solid space, the thickness of this solid space is usually several nanometers. For OLED display, it is possible to have multiple recombination region, electronics and hole compound in recombination region, give off energy, transmit through energy, excite contiguous luminophore luminous. Therefore, recombination region can also regard the energy source providing transmitting light as, therefore the size of recombination region volume affects the power that OLED display is luminous.
Prior art improves the brightness of OLED display mainly through following several method:
One is to increase luminescent layer, namely add the number of recombination region, it is achieved in the composite space that identical carrier injects under density, improve electronics and hole-recombination probability, obtain the transmitting light of high brightness, for instance the stacked OLED display that multiple-unit is together in series. The shortcoming of this display device is complex manufacturing technology, improves driving voltage, although improves the current efficiency of device, but have impact on power efficiency.
Another kind is to increase driving voltage, improves the injection density of carrier so that the volume of recombination region increases, but works under high voltage and high current density, reduces power efficiency; Further, under high voltages, because exciton fission etc. cause more energy loss, puncture in the generation short circuit of film defects place most probably and burn device so that the life-span of display device significantly shortens.
Another is to increase the thickness of organic luminous layer, it is also possible to the volume of recombination region is increased, but is as the increase of organic luminous layer thickness, and driving voltage also can increase so that current efficiency and power efficiency all reduce.
Summary of the invention
It is an object of the invention to provide a kind of OLED display and manufacture method thereof, under not increasing the premise of driving voltage and light emitting layer thickness, increase the volume of recombination region and then the probability of increase electronics and hole-recombination, improve the luminosity of OLED display.
The invention provides a kind of OLED display, including the first electrode being sequentially formed on substrate, first transport layer, luminescent layer, second transport layer and the second electrode, it is formed with recombination region between described luminescent layer and described second transport layer, the surface of the described luminescent layer contacted with described recombination region and the surface of described second transport layer contacted with described recombination region are the three-dimension curved surface with fluctuating, the described three-dimension curved surface with fluctuating is to adopt evaporation, scraping, the method of chemical etching or physical etch and impressing is prepared from the surface of described luminescent layer.
The invention provides the manufacture method of a kind of OLED display, including:
Step 1, on substrate, form the first electrode;
Step 2, the method adopting chemical vapour deposition (CVD), physical vapour deposition (PVD) or spin coating, form the first transport layer on the substrate complete step 1;
Step 3, the method adopting evaporation, spin coating or inkjet printing, form luminescent layer on the substrate complete step 2;
Step 4, the method adopting evaporation, scraping, chemical etching or physical etch and impressing, prepare into the three-dimension curved surface with fluctuating by the surface of described luminescent layer;
Step 5, the method adopting chemical vapour deposition (CVD), physical vapour deposition (PVD) or spin coating, form the second transport layer on the substrate complete step 4;
Step 6, on the substrate complete step 5, form the second electrode.
OLED display provided by the invention and manufacture method thereof, under not increasing the premise of driving voltage and light emitting layer thickness, increase the volume of recombination region, and then increases the probability of electronics and hole-recombination, improves the luminosity of OLED display.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of OLED display embodiment one of the present invention;
Fig. 2 is the cross section structure schematic diagram of OLED display embodiment two of the present invention;
Fig. 3 is the top view of the three-dimension curved surface of OLED display embodiment two of the present invention;
Fig. 4 is the cross section structure schematic diagram of OLED display embodiment three of the present invention;
Fig. 5 is the cross section structure schematic diagram of OLED display embodiment four of the present invention;
Fig. 6 is the flow chart of the manufacture method of OLED display of the present invention.
Detailed description of the invention
Below by drawings and Examples, technical scheme is described in further detail.
As shown in Figure 1, cross section structure schematic diagram for OLED display embodiment one of the present invention, the present embodiment includes the first electrode sequentially formed on the substrate 11, first transport layer, luminescent layer 14, second transport layer and the second electrode, wherein the first electrode is anode 12, first transport layer is hole transmission layer 13, second transport layer is electron transfer layer 16, second electrode is negative electrode 17, recombination region 15 it is formed with between luminescent layer 14 and electron transfer layer 16, the surface of the luminescent layer 14 contacted with recombination region 15 and the surface of electron transfer layer 16 contacted with recombination region 15 are the three-dimension curved surface with fluctuating.
The above-mentioned three-dimension curved surface with fluctuating can be the three-dimension curved surface with rule fluctuating, and in the present embodiment, three-dimension curved surface is have the three-dimension curved surface that zigzag rises and falls.
In the present embodiment, after applying suitable bias between two electrodes of negative and positive, electronics and hole are injected from negative electrode 17 and anode 12 respectively, owing in organic layer, the mobility in hole is higher than electronics, therefore hole and electronics generally compound occur at the interface of the luminescent layer 14 near negative electrode 17, form recombination region 15. Owing to the surface on the surface of luminescent layer 14 contacted with recombination region 15 and the electron transfer layer 16 contacted with recombination region 15 is the three-dimension curved surface with fluctuating, compared with existing planar structure, increase the volume of recombination region 15, and then increase the probability of electronics and hole-recombination, achieve under the premise of the thickness not changing driving voltage and each organic layer, improve the luminosity of OLED display.
As shown in Figure 2, cross section structure schematic diagram for OLED display embodiment two of the present invention, as shown in Figure 3, top view for the three-dimension curved surface of OLED display embodiment two of the present invention, from embodiment one, the present embodiment is distinctive in that the shape of three-dimension curved surface is different, the three-dimension curved surface of the luminescent layer 24 contacted with recombination region 25 in the present embodiment and the three-dimension curved surface of electron transfer layer 26 contacted with recombination region 25 are have the three-dimension curved surface that arc rises and falls, its cross section is made up of the array of several semi-spherical shape, and three-dimension curved surface has well-regulated fluctuating.
As shown in Figure 4, cross section structure schematic diagram for OLED display embodiment three of the present invention, from above-mentioned two embodiment, the present embodiment is distinctive in that the shape of three-dimension curved surface is different, the three-dimension curved surface of the luminescent layer 34 contacted with recombination region 35 in the present embodiment and the three-dimension curved surface of electron transfer layer 36 contacted with recombination region 35 are the three-dimension curved surface with square fluctuating, and three-dimension curved surface has well-regulated fluctuating.
As shown in Figure 5, cross section structure schematic diagram for OLED display embodiment four of the present invention, the present embodiment is distinctive in that from above-described embodiment the shape of three-dimension curved surface is different, and the three-dimension curved surface of the luminescent layer 44 contacted with recombination region 45 and the surface of the three-dimension curved surface of electron transfer layer 46 contacted with recombination region 45 have random fluctuating.
OLED display of the present invention is not limited in the structure described in accompanying drawing; the shape of three-dimension curved surface can be have simple or complicated rule fluctuating; can also be that there is simple or complicated random fluctuating; as long as the structure of this three-dimension curved surface can increase the volume of recombination region; improve the luminosity of OLED display, be invention which is intended to be protected.
The electron transfer layer of above-mentioned OLED display and hole transmission layer can be the multiple structures formed by barrier layer, implanted layer and transport layer superposition; Whole OLED display can also be inverted structure, namely negative electrode under, it is also possible to be a construction unit in stacked OLED display.
OLED display of the present invention is not limited in described in accompanying drawing including the structure of a recombination region, and the number of recombination region can be more than one, and the number of the three-dimension curved surface that recombination region is corresponding can also be more than one.
Below by the manufacture process of OLED display, technical scheme is described.
Choose substrate, it is possible to choose glass, piezoid, silicon chip, sheet metal, polyethylene terephthalate (PolyethyleneTerephthalate, hereinafter referred to as: PET) or surface flexible polymeric film after treatment as substrate;
Substrate is formed anode, anode generally adopts indium tin oxide (IndiumTinOxide, hereinafter referred to as: ITO), indium-zinc oxide (IndiumZincOxide, hereinafter referred to as: IZO) or zinc oxide aluminum AZO) (Al-dopedZnO, hereinafter referred to as the material such as;
Adopt chemical vapour deposition (CVD), physical vapour deposition (PVD) (PhysicalVaporDeposition, hereinafter referred to as: PVD) or the method for spin coating, the substrate forming anode is formed hole transmission layer, the triaromatic amine that it is core with biphenyl that hole transmission layer generally adopts, such as N, N '-bis (naphthalen-1-y)-N, N '-bis (phenyl) benzidin (NPB), the materials such as diamidogen biphenyl derivatives, thickness is generally between 10��50nm;
The method adopting evaporation, spin coating or inkjet printing, the substrate forming hole transmission layer is formed luminescent layer, luminescent layer can be single Organic substance, such as 8 hydroxyquinoline aluminums (Alq3), rubrene (Rubrene) etc., it can also be alloy, such as 4,4 '-N, N '-two carbazoles-biphenyl (CBP) mixes rubrene (Rubrene) etc., can also is that phosphor material, such as fac-tri-(2-phenylpyridine) iridium [Ir (ppy) 3] etc., can being more fluorescent material, thickness be generally between 1��50nm;
The method adopting super evaporation, scraping, chemical etching or physical etch and impressing at a slow speed, prepares into the three-dimension curved surface with fluctuating by the surface of luminescent layer;
The method adopting chemical vapour deposition (CVD), PVD or spin coating, the substrate prepare into three-dimension curved surface is formed electron transfer layer, electron transfer layer can be Alq3,2,2 ', 2 "-(1,3; 5-benzenetriyl) tris [1-phenyl-1H-benzimidazole] (TPBI), 4; 7-diphenyl-1,10-phenanthroline (Bphen) mix the materials such as metal caesium (Cs), and thickness is generally between 10��100nm;
The method adopting evaporation, forms negative electrode on the substrate forming electron transfer layer, and negative electrode can be magnalium, magnesium silver alloy, calcium silver alloy etc., and thickness is generally between 10��200nm;
Finally, capping or thin-film encapsulation layer is utilized to be packaged by above-mentioned whole display device, in order to prevent water and oxygen from organic layer is caused erosion.
As shown in Figure 6, for the flow chart of the manufacture method of OLED display of the present invention, specifically include following steps:
Step 1, on substrate, form the first electrode;
Step 2, the method adopting chemical vapour deposition (CVD), physical vapour deposition (PVD) or spin coating, form the first transport layer on the substrate complete step 1;
Step 3, the method adopting evaporation, spin coating or inkjet printing, form luminescent layer on the substrate complete step 2;
Step 4, the method adopting evaporation, scraping, chemical etching or physical etch and impressing, prepare into the three-dimension curved surface with fluctuating by the surface of described luminescent layer;
Step 5, the method adopting chemical vapour deposition (CVD), physical vapour deposition (PVD) or spin coating, form the second transport layer on the substrate complete step 4;
Step 6, on the substrate complete step 5, form the second electrode.
Further, in step 1, first choose substrate, it is possible to choose glass, piezoid, silicon chip, sheet metal, PET or surface flexible polymeric film after treatment as substrate; Then forming anode on substrate, anode generally adopts the materials such as ITO, IZO or AZO;
In step 2, the method adopting chemical vapour deposition (CVD), PVD or spin coating, the substrate forming anode is formed hole transmission layer, the triaromatic amine that it is core with biphenyl that hole transmission layer generally adopts, such as N, N '-bis (naphthalen-1-y)-N, N '-bis (phenyl) benzidin (NPB), the materials such as diamidogen biphenyl derivatives, thickness is generally between 10��50nm;
In step 3, the method adopting evaporation, spin coating or inkjet printing, forming luminescent layer on the substrate forming hole transmission layer, luminescent layer can be single Organic substance, such as Alq3, Rubrene etc., it can also be alloy, as CBP mixes Rubrene etc., it is also possible to be phosphor material, such as fac-tri-(2-phenylpyridine) iridium [Ir (ppy) 3] etc., can being more fluorescent material, thickness be generally between 1��50nm;
In step 4, the method adopting super evaporation, scraping, chemical etching or physical etch and impressing at a slow speed, the surface of luminescent layer is prepared into the three-dimension curved surface with fluctuating;
In step 5, the method adopting chemical vapour deposition (CVD), PVD or spin coating, forming electron transfer layer on the substrate prepare into three-dimension curved surface, electron transfer layer can be that Alq3, TPBI, Bphen mix the materials such as metal caesium (Cs), and thickness is generally between 10��100nm;
In step 6, the method adopting evaporation, the substrate forming electron transfer layer is formed negative electrode, negative electrode can be magnalium, magnesium silver alloy, calcium silver alloy etc., and thickness is generally between 10��200nm;
Finally, capping or thin-film encapsulation layer is utilized to be packaged by above-mentioned whole display device, in order to prevent water and oxygen from organic layer is caused erosion.
In the present embodiment, the shape of three-dimension curved surface can be have simple or complicated rule fluctuating; can also be that there is simple or complicated random fluctuating; as long as the structure of this three-dimension curved surface can increase the volume of recombination region; improve the luminosity of OLED display, be invention which is intended to be protected.
In the present embodiment, after applying suitable bias between two electrodes of negative and positive, electronics and hole are injected from negative electrode and anode respectively, owing in organic layer, the mobility in hole is higher than electronics, therefore hole and electronics generally compound occur at the interface of the luminescent layer near negative electrode, form recombination region. Owing to the surface on the surface of luminescent layer contacted with recombination region and the electron transfer layer contacted with recombination region is the three-dimension curved surface with fluctuating, compared with existing planar interface structure, increase the volume of recombination region, and then increase the probability of electronics and hole-recombination, achieve under the premise of the thickness not changing driving voltage and each organic layer, improve the luminosity of OLED display.
Last it is noted that above example is only in order to illustrate technical scheme, it is not intended to limit; Although the present invention being described in detail with reference to previous embodiment, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or wherein portion of techniques feature is carried out equivalent replacement; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (6)
1. an organic LED display device, including the first electrode being sequentially formed on substrate, first transport layer, luminescent layer, second transport layer and the second electrode, it is formed with recombination region between described luminescent layer and described second transport layer, it is characterized in that, the surface of the described luminescent layer contacted with described recombination region and the surface of described second transport layer contacted with described recombination region are the three-dimension curved surface with random fluctuations, the described three-dimension curved surface with random fluctuations is to adopt distillation, scraping, chemical etching, the method of physical etch or impressing is prepared from the surface of described luminescent layer.
2. organic LED display device according to claim 1, it is characterised in that the number of described recombination region is more than one, the number of described three-dimension curved surface is more than one.
3. organic LED display device according to claim 1, it is characterised in that described first transport layer or the second transport layer are the multiple structure formed by barrier layer, implanted layer and transport layer superposition.
4. organic LED display device according to claim 1, it is characterised in that the material of described luminescent layer is the Organic substance of single Organic substance or doping.
5. organic LED display device according to claim 4, it is characterised in that the Organic substance of described doping is fluorescent material or phosphor material.
6. the manufacture method of an organic LED display device, it is characterised in that including:
Step 1, on substrate, form the first electrode;
Step 2, the method adopting chemical vapour deposition (CVD), physical vapour deposition (PVD) or spin coating, form the first transport layer on the substrate complete step 1;
Step 3, the method adopting evaporation, spin coating or inkjet printing, form luminescent layer on the substrate complete step 2;
Step 4, the method adopting evaporation, scraping, chemical etching, physical etch or impressing, prepare into the three-dimension curved surface with random fluctuations by the surface of described luminescent layer;
Step 5, the method adopting chemical vapour deposition (CVD), physical vapour deposition (PVD) or spin coating, form the second transport layer on the substrate complete step 4; Wherein, being formed with recombination region between described luminescent layer and described second transport layer, the surface of the described luminescent layer contacted with recombination region and the surface of described second transport layer contacted with recombination region are the three-dimension curved surface with random fluctuations;
Step 6, on the substrate complete step 5, form the second electrode.
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| US11673155B2 (en) | 2012-12-27 | 2023-06-13 | Kateeva, Inc. | Techniques for arrayed printing of a permanent layer with improved speed and accuracy |
| CN105073434B (en) | 2012-12-27 | 2017-12-26 | 科迪华公司 | For pad-ink fixing fabric structure with the method and system of the deposits fluid in precision tolerance |
| CN107825886B (en) | 2013-12-12 | 2020-04-14 | 科迪华公司 | Method of manufacturing electronic device |
| DE102014102191B4 (en) | 2014-02-20 | 2017-12-28 | Osram Oled Gmbh | Organic light emitting device with improved color rendering index |
| CN107221604A (en) | 2017-06-01 | 2017-09-29 | 深圳市华星光电技术有限公司 | Organic Light Emitting Diode and manufacture method |
| CN109461822A (en) * | 2018-08-30 | 2019-03-12 | 云谷（固安）科技有限公司 | OLED device and preparation method thereof, display device |
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| CN1805170A (en) * | 2006-01-10 | 2006-07-19 | 陕西科技大学 | Electron injection type organic electroluminescent display component |
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| ATE381117T1 (en) * | 2005-04-13 | 2007-12-15 | Novaled Ag | ARRANGEMENT FOR A PIN-TYPE ORGANIC LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING IT |
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| CN1805170A (en) * | 2006-01-10 | 2006-07-19 | 陕西科技大学 | Electron injection type organic electroluminescent display component |
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| CN108922979A (en) * | 2018-07-11 | 2018-11-30 | 云谷（固安）科技有限公司 | Display panel and preparation method thereof, display device |
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