CN101221071B - Flame detection device - Google Patents

Flame detection device Download PDF

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Publication number
CN101221071B
CN101221071B CN2008100020531A CN200810002053A CN101221071B CN 101221071 B CN101221071 B CN 101221071B CN 2008100020531 A CN2008100020531 A CN 2008100020531A CN 200810002053 A CN200810002053 A CN 200810002053A CN 101221071 B CN101221071 B CN 101221071B
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light receiving
receiving element
semiconductor light
mentioned
flame
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CN101221071A (en
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山田哲也
菊地则雄
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Azbil Corp
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Azbil Corp
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23NREGULATING OR CONTROLLING COMBUSTION
    • F23N5/00Systems for controlling combustion
    • F23N5/02Systems for controlling combustion using devices responsive to thermal changes or to thermal expansion of a medium
    • F23N5/08Systems for controlling combustion using devices responsive to thermal changes or to thermal expansion of a medium using light-sensitive elements
    • F23N5/082Systems for controlling combustion using devices responsive to thermal changes or to thermal expansion of a medium using light-sensitive elements using electronic means
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23NREGULATING OR CONTROLLING COMBUSTION
    • F23N2229/00Flame sensors
    • F23N2229/04Flame sensors sensitive to the colour of flames

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Control Of Combustion (AREA)

Abstract

The invention provides a flame detection equipment using a semiconductor light receiving element as a light receiving unit, which has a simple structure, raises the noiseproof capability, and stabilizes the flame detecting features. The flame detection equipment comprises a semiconductor light receiving element and a main body of the detection equipment, wherein the semiconductor light receiving element detects the visible light from the flame, and the main body of the detection equipment supplies a drive voltage to the semiconductor light receiving element. The exist or not of a flame can be judged by detecting a flame detection signal of the semiconductor light receiving element by the cable, especially for fixing a dark current add circuit for ading a dark current to flame detection signal of the semiconductor light receiving element near the semiconductor light receiving element.

Description

Flame detecting device
Technical field
The present invention relates to use the visible light that semiconductor light receiving elements such as photodiode send as flame detection light receiving unit, prevented the flame detecting device of the misoperation that causes by extraneous noise especially.
Background technology
The flame detecting device that the flame of detection gas burner (gas burner), oil burner (oil burner) etc. is used for its burning (igniting) control comprises sensor head and pick-up unit main body, this sensor head for example is equipped with the light receiving unit of the visible light that flame detection sends, this pick-up unit main body provides its driving voltage by cable to above-mentioned light receiving unit, and judges through the flame detection signal of the above-mentioned light receiving unit of above-mentioned cable detection and to have or not flame (for example with reference to patent documentation 1,2).
In addition, oil burner is provided with fuel nozzle 2 for example as shown in Figure 4 in the air outlet (playpipe) of fan blower 1, and near the jet hole of above-mentioned fuel nozzle 2 spark electrode 3 is set.For example be configured to the sensor head 4 of controlling its burned flame pick-up unit at the flame that is used for detecting this oil burner: be positioned at the rear of above-mentioned fuel nozzle 2, be used to detect the visible light that the flame of the jet hole that is formed at this fuel nozzle 2 sends.In addition, as the light receiving unit that installs in the sensor head 4, mainly adopted the CdS unit in the past.
Shown in IGNITION CONTROL sequential among Fig. 5, the burning control of oil burner is as follows: accept the enabled instruction of burner, at first make fan blower 1 work, make ignition transformer work then and make spark electrode 3 produce spark, under the spark stable status, open fuel valve, thereby will light from the fuel of above-mentioned fuel nozzle 2 ejections.Then, behind the flame that detects the fuel combustion generation by above-mentioned flame detecting device, stop the work of above-mentioned ignition transformer, thereby finish this IGNITION CONTROL (for example with reference to patent documentation 3).
Patent documentation 1: Jap.P. discloses flat 8-261443 communique
Patent documentation 2: No. 3255442 communique of Jap.P.
Patent documentation 3: Jap.P. discloses flat 6-288541 communique
Summary of the invention
In recent years, because RoHS (Restriction of Hazardous Substances; Restriction about dangerous substance) chemical substance such as indication restriction, the use of Cd (cadmium) is restricted.Therefore, attempt replacing CdS unit in the past recently, and semiconductor light receiving elements such as employing photodiode are as the light receiving unit of flame detecting device.But this semiconductor light receiving element has following characteristic: to the detection sensitivity height of light, and the electric current output characteristics that is subjected to light intensity is linear, therefore, flame rocked significant reaction.
And its output current is minimum under dark (no flame) state, and only for about number nA, its internal driving is high, therefore is subjected to the influence of extraneous noise easily.Therefore, because small noise will bring considerable influence to the output of semiconductor light receiving element, therefore, in the pick-up unit main body that monitors semiconductor light receiving element output, the noise flase drop that for example puts on semiconductor light receiving element might be surveyed to flame is arranged.Therefore the sensor head 4 that this light receiving unit especially the is housed fan blower 1 etc. of packing into as described above not only is subjected to the influence of fan blower 1, also is subjected to being used for the The noise that the ignition transformer etc. of drive ignition electrode 3 is produced, and is easy to generate misoperation.
Existence in view of the above problems, the object of the present invention is to provide a kind of flame detecting device simple in structure, it adopts semiconductor light receiving element such as photodiode as light receiving unit, has especially improved noise tolerance, has made flame detect characteristic to become stable.
In order to achieve the above object, flame detecting device of the present invention has semiconductor light receiving element and pick-up unit main body, the visible light that this semiconductor light receiving element flame detection is sent, this pick-up unit main body provides its driving voltage by cable to above-mentioned semiconductor light receiving element, and judge by the detected flame detection signal of above-mentioned semiconductor light receiving element through above-mentioned cable detection and to have or not flame, it is characterized in that: near above-mentioned semiconductor light receiving element, be provided with and will add the dark current adding circuit of dark current by the detected flame detection signal of this semiconductor light receiving element especially.
In addition, as above-mentioned semiconductor light receiving element, preferably use one for example to have photodiode and the element of amplifier that the output of this photodiode is amplified.First resistor that is connected with driving power again after being connected in series and second resistor, between the two ends of above-mentioned first resistor or above-mentioned second resistor, be connected in parallel to above-mentioned semiconductor light receiving element through above-mentioned cable, by above-mentioned first resistor and above-mentioned second resistor supply voltage is carried out the driving voltage that electric resistance partial pressure generates above-mentioned semiconductor light receiving element, and judgement has or not flame at the voltage of the tie point generation of above-mentioned first resistor and above-mentioned second resistor with judgement.
Above-mentioned dark current adding circuit for example is achieved as the resistor that is connected in parallel with above-mentioned semiconductor light receiving element.Also can be used as output according to semiconductor light receiving element waits the variable amplifier of current amplification degree to realize the dark current adding circuit.
Adopt the flame detecting device that so constitutes, because the dark current adding circuit that the flame detection signal of this semiconductor light receiving element is added dark current is set, can reduce the impedance of above-mentioned semiconductor light receiving element on apparent near above-mentioned semiconductor light receiving element.Its result even be provided near the noise-producing source, also can suppress sneaking into of noise.Can prevent surveying in the output of the above-mentioned semiconductor light receiving element of this cable detection effectively because of sneaking into the flase drop that noise takes place.Therefore, only improve the dark current of semiconductor light receiving element on apparent consciously, just can obtain and prevent that above-mentioned semiconductor light receiving element from because of noise misoperation taking place, thereby can stably carry out effects such as flame detection by the dark current adding circuit.
Description of drawings
Fig. 1 is the summary pie graph of the flame detecting device of one embodiment of the present invention.
Fig. 2 is the figure of expression semiconductor light receiving element (photodiode) with respect to the output current characteristic that is subjected to light intensity.
Fig. 3 is expression flame judgment threshold Vth1, reversal connection judgment threshold Vth2, short-circuit detecting threshold value Vth3 detect the relation of voltage Vin with respect to flame figure.
Fig. 4 be the summary of expression gas burner constitute and the installation position of the sensor head of flame detecting device between the figure that concerns.
Fig. 5 is the figure of the example of IGNITION CONTROL sequential in the expression gas burner.
Embodiment
Below, with reference to the flame detecting device of description of drawings one embodiment of the present invention.
The summary of major part that Fig. 1 illustrates the flame detecting device of embodiment constitutes.In Fig. 1, the 10th, semiconductor light receiving element (for example Si photodiode) 11 sensor heads that form of the light receiving unit of the visible light that sends as flame detection are installed, the 20th, its driving voltage is provided and judges that through the flame detection signal that above-mentioned cable 30 detects above-mentioned semiconductor light receiving element 11 aphlogistic pick-up unit main body is arranged to above-mentioned semiconductor light receiving element 11 through cable 30.
Pick-up unit main body 20 has first fixed resistance 21 and second fixed resistance 22 that is connected with driving power again after for example being connected in series, and for example is connected in parallel through cable 30 and semiconductor light receiving element 11 between the two ends of second fixed resistance 22 of ground connection side.Above-mentioned first fixed resistance 21 and second fixed resistance 22 have driving voltage Vd that supply voltage Vc dividing potential drop is generated above-mentioned semiconductor light receiving element 11 and the effect of exporting this driving voltage Vd through above-mentioned cable 30, and this first fixed resistance 21 and second fixed resistance 22 also have as described later the effect that the voltage that makes the tie point place of above-mentioned first fixed resistance 21 and second fixed resistance 22 according to the output (flame detection signal) of above-mentioned semiconductor light receiving element 11 changes.In other words, semiconductor light receiving element 11 is connected in parallel through cable 30 and above-mentioned second fixed resistance 22.And semiconductor light receiving element 11 is accepted the visible light that flame sends, and exports the flame detection signal, and according to the variation of the impedance of accompanying with it the voltage at the tie point place of said fixing resistance 21,22 is changed.
Detect the flame test section 23 in the pick-up unit main body 20 of output (flame detection signal) of above-mentioned semiconductor light receiving element 11, for example constitute by microcomputer, be constituted as the change in voltage that produces according to tie point place, judge whether to exist the flame detection signal of above-mentioned semiconductor light receiving element 11 at said fixing resistance 21,22.Especially, this flame test section 23 is constituted as by predefined judgment threshold voltage Vth being compared with the voltage that produces at the tie point place of said fixing resistance 21,22, detecting and has or not flame.
When the controlling object of flame detection is oil burner, on above-mentioned detection device 20, be provided with according to having or not flame to control combustion control device 24 of each action of the fan blower 31 of oil burner, ignition transformer (spark electrode) 32 and fuel valve (fuel nozzle) 33.Self-evident, this combustion control device 24 also can be used as the part of functions that microcomputer had of above-mentioned formation flame test section 23 and comes accomplished.
Basically as mentioned above, in the flame detecting device of the light receiving element of the visible light that uses semiconductor light receiving element, for example Si photodiode 11 to send as flame detection, the invention is characterized in, embodiment as shown in Figure 1 is such, on sensor head 10, dark current adding circuit 12 and filtering circuit 13 are housed respectively, and reversal connection is with diode 14 to have inserted preventing of connecting with above-mentioned Si photodiode 11 near Si photodiode 11.
As above-mentioned Si photodiode 11, in this expression is to adopt example amplifier 11b, so-called compound smooth IC that is integrally formed with its pull-up resistor 11a and is used to amplify its output current on photodiode 11.But can certainly be that pull-up resistor 11a and amplifier 11b are assembled on the photodiode 11 as single component respectively.Above-mentioned dark current adding circuit 12 for example is made of the fixed resistance that is connected in parallel with above-mentioned Si photodiode 11.Above-mentioned filtering circuit 13 is made of the passive low ventilating filter that resistance 13a and capacitor 13b, 13c are combined.This filtering circuit 13 has the effect that the flame detection signal that makes photodiode 11 lingeringly outputs to above-mentioned cable 30, and have and prevent from promptly to have except that the denoising function owing to be superimposed upon the function of the misoperation of the above-mentioned photodiode 11 that the noise on the above-mentioned cable 30 causes.
At this, above-mentioned dark current adding circuit 12 is described at first.Semiconductor light receiving element (photodiode) 11 as light receiving unit is compared with common in the past CdS unit, its response speed is counted m second soon, and have such shown in characteristic A among Fig. 2, be subjected to light intensity (brightness) to be the output current characteristic of substantial linear with respect to it.When being subjected to light intensity low, especially when dark (no flame), its output current is very little, only for about number nA, accepts the visible light that flame sends and it is increased by light intensity, and output current increases thereupon.In general measurement purposes, such output current characteristic is most suitable aspect the reduction measuring error.
But the impedance of the semiconductor light receiving element (photodiode) 11 when above-mentioned output current characteristic means dark (no flame) is high.Through cable 30 above-mentioned semiconductor light receiving element (photodiode) 11 is being connected in the flame detecting device of the structure on the detector body 20, when the impedance of semiconductor light receiving element (photodiode) 11 is higher, the cabling of cable 30 (wiring) is subjected to The noise easily, can cause flase drop to survey.Promptly, at the higher state (dark state) of the impedance of semiconductor light receiving element (photodiode) 11, only the output of the above-mentioned semiconductor light receiving element (photodiode) 11 that detects by this cable 30 is taken place than cataclysm by the small noise that is superimposed upon on the cable 30.And, as mentioned above, above-mentioned semiconductor light receiving element (photodiode) 11 itself be configured in more noise-producing sources such as fan blower 31 or ignition transformer (spark electrode) 32 near.
Therefore, in this flame detecting device, connect the fixed resistance in parallel with this semiconductor light receiving element (photodiode) 11 in the front of semiconductor light receiving element (photodiode) 11, intention is reduced in the impedance of observing under 11 o'clock the dark state of above-mentioned semiconductor light receiving element (photodiode) through cable 30 from pick-up unit main body 20 sides, makes this semiconductor light receiving element (photodiode) 11 be difficult to be subjected to the influence of extraneous noise thus.Particularly, as shown in Figure 1, near semiconductor light receiving element (photodiode) 11, this semiconductor light receiving element (photodiode) 11 is connected in parallel as the fixed resistance of dark current adding circuit 12, on this basis, through cable 30 above-mentioned semiconductor light receiving element (photodiode) 11 is connected on the pick-up unit main body 20.
So, because the fixed resistance that is connected in parallel with semiconductor light receiving element (photodiode) 11, when the impedance of semiconductor light receiving element (photodiode) 11 is higher than the resistance value of this fixed resistance, when 30 pairs of semiconductor light receiving elements of cable (photodiode) 11 apply driving voltage Vd, electric current mainly flows through said fixing resistance.And along with the impedance step-down of semiconductor light receiving element (photodiode) 11, the output current of this semiconductor light receiving element (photodiode) 11 increases.So even when dark, also output current characteristic B as shown in Figure 2 is such, flow through to a certain degree electric current through cable 30, observe 11 o'clock dark current of above-mentioned semiconductor light receiving elements (photodiode) thereby can increase through cable 30.As mentioned above, with the fixed resistance that semiconductor light receiving element (photodiode) 11 is connected in parallel, on apparent, play the dark current increase that makes this semiconductor light receiving element (photodiode) 11, the effect of the impedance of semiconductor light receiving element (photodiode) 11 when also reducing dark.
Even its result when dark, also can be suppressed to the impedance of semiconductor light receiving element (photodiode) 11 and is lower than to a certain degree, therefore, even dispose cable 30 near noise-producing source, also can suppress sneaking into of noise.Can effectively prevent from when the output to above-mentioned semiconductor light receiving element (photodiode) 11 detects, to survey because of sneaking into the flase drop that noise takes place by this cable 30.
Also can replace said fixing resistance, constitute dark current adding circuit 12 as follows, promptly, can change the gain of above-mentioned amplifier 11b according to the output of semiconductor light receiving element (photodiode) 11, thereby the output of the amplifier 11b when making dark increases.In this case, for example can be and change the bias voltage of amplifier 11b corresponding to the output of semiconductor light receiving element (photodiode) 11, thus, its electric current output characteristics (gain) is changed to get final product, perhaps, also can be after using microprocessor or A/D converter that digital conversion is carried out in the output of semiconductor light receiving element (photodiode) 11, when cable 30 transmitted its digital signal, the output of the above-mentioned semiconductor light receiving element of foundation (photodiode) 11 made A/D conversion characteristic self variable.
But even add that by the output at semiconductor light receiving element (photodiode) 11 dark current component implements to prevent the countermeasure that its flase drop is surveyed as described above, it is overlapping also to have extraneous noise on cable 30.And, a little less than the ability of semiconductor light receiving element (photodiode) 11 opposing extraneous noises, because this extraneous noise, cause the locking misoperations such as (latch up) of semiconductor light receiving element (photodiode) 11 self easily.
Therefore, in this flame detecting device, near semiconductor light receiving element (photodiode) 11, filtering circuit 13 is set, avoid above-mentioned semiconductor light receiving element (photodiode) 11 be subjected to the extraneous noise that applied through cable 30 influence, prevent the misoperations such as locking of above-mentioned semiconductor light receiving element (photodiode) 11.Simultaneously, by above-mentioned filtering circuit 13 the flame detection signal of being exported through cable 30 from semiconductor light receiving element (photodiode) 11 is postponed, thus, removed since flame the response component that causes semiconductor light receiving element (photodiode) 11 non-original ideas such as rock.That is, as mentioned above, it is very fast that the response characteristic of semiconductor light receiving element (photodiode) 11 is compared with CdS unit in the past, only is that its visible light intensity has change slightly because of rocking of flame, will respond the variation that it is subjected to light intensity delicately.Therefore, even only be that the output (flame detection signal) of semiconductor light receiving element (photodiode) 11 reduces because of small flame rocks, also may be detected. as flame arrest by mistake.
In order to prevent such problem, as mentioned above, in this flame detecting device, front at semiconductor light receiving element (photodiode) 11 is provided with filtering circuit 13, thereby the output (flame detection signal) of the above-mentioned semiconductor light receiving element (photodiode) 11 of quick response is postponed, thus, make the response wave shape of flame detection signal mild after, output to cable 30.In other words, by filtering circuit 13, the response characteristic on semiconductor light receiving element (photodiode) 11 apparent is postponed.By above-mentioned filtering circuit 13, remove the extraneous noises such as spark noise that are overlapped in above-mentioned cable 30 from noise-producing sources such as above-mentioned ignition transformers, make the working stability of above-mentioned semiconductor light receiving element (photodiode) 11.
Its result, in pick-up unit main body 20 sides, the output (flame detection signal) that can not be subjected to flame wobble effects ground to detect the semiconductor light receiving element (photodiode) 11 under the working stability situation changes as slow response signal, therefore, can stably carry out flame and detect.Especially filtering circuit 13 is arranged at semiconductor light receiving element (photodiode) 11 near, thereby can realize preventing is caused semiconductor light receiving element (photodiode) 11 that the function of misoperations takes place and is realized the improvement of the response of this semiconductor light receiving element (photodiode) 11 by noise.
Above-mentioned sensor head 10, be that semiconductor light receiving element (photodiode) 11 only is connected through two-wire cable 30 with pick-up unit main body 20.Therefore, exist semiconductor light receiving element (photodiode) 11 possibilities with respect to 20 reversal connections of pick-up unit main body.Because CdS unit in the past is non-polar, so do not have problems with respect to the connection polarity of pick-up unit main body 20.But if with semiconductor light receiving element (photodiode) 11 reversal connections, then the work of this semiconductor light receiving element (photodiode) 11 becomes unstable, and its output signal self is also uncertain.
Therefore, in this flame detecting device, the series connection insertion prevents the diode 14 that reversal connection is used in the front of semiconductor light receiving element (photodiode) 11, and reversal connection measuring ability that detects semiconductor light receiving element (photodiode) 11 reversal connections and the short trouble measuring ability that detects this semiconductor light receiving element (photodiode) 11 short troubles are set on pick-up unit main body 20.This reversal connection measuring ability and short trouble measuring ability are by will realizing in the function of the tie point of above-mentioned first fixed resistance 21 and second fixed resistance 22 voltage that produces and the threshold that sets in advance, and above-mentioned threshold value is used for judgement and has aphlogistic threshold value different with described later.
Promptly, in this flame detecting device, by preventing the diode 14 that reversal connection is used connecting between semiconductor light receiving element (photodiode) 11 and the cable 30 to insert, make the driving voltage Vd of self-test device main body 20 sides when reversal connection not put on semiconductor light receiving element (photodiode) 11, thereby forbid the work of semiconductor light receiving element (photodiode) 11 self, can not obtain the output (flame detection signal) of non-original idea.In other words, with semiconductor light receiving element (photodiode) 11 reversal connections the time, the output of this semiconductor light receiving element (photodiode) 11 is made as " 0 ", thereby becomes the detected state of " no flame " always.
In this flame detecting device, prevent that with above-mentioned such setting the diode 14 that reversal connection is used from combining, above-mentioned detection device main body 20 also is provided with the reversal connection measuring ability and the short trouble measuring ability of semiconductor light receiving element (photodiode) 11 except judgement has aphlogistic function.In above-mentioned reversal connection measuring ability and the short trouble measuring ability, as shown in Figure 3, in the time will having aphlogistic threshold value to be set as Vth1 according to the voltage Vin that tie point the produced judgement of above-mentioned first fixed resistance 21 and second fixed resistance 22, give the magnitude of voltage that is higher than this threshold value Vth1 with the reversal connection detection that sets with threshold value Vth2, give the magnitude of voltage that is lower than above-mentioned threshold value Vth1 with threshold value Vth3 the short-circuit detecting that sets.
On pick-up unit main body 20, do not connect semiconductor light receiving element (photodiode) 11 o'clock via cable 30, if being located at the voltage Vd that tie point produced of above-mentioned first fixed resistance 21 and second fixed resistance 22 is 5V, then when normally being connected to semiconductor light receiving element (photodiode) 11 on this pick-up unit main body 20 via cable 30, under the state of dark (no flame), only there is the electric current of the dark current part that increases by above-mentioned dark current adding circuit 12 to flow through via sensor head 10 from above-mentioned cable 30, therefore, the voltage Vin that tie point produced at above-mentioned first fixed resistance 21 and second fixed resistance 22 is lower slightly than above-mentioned voltage Vd.That is, 11 pairs second fixed resistances of above-mentioned semiconductor light receiving element (photodiode) 22 produce effect in parallel, are equivalent to only shunt the dark current electric current partly of above-mentioned increase, therefore cause above-mentioned detection voltage Vin lower slightly than driving voltage Vd.
When semiconductor light receiving element (photodiode) 11 detects the visible light of flame and exports the flame detection signal, when its impedance reduced, the voltage Vin that tie point produced at above-mentioned first fixed resistance 21 and above-mentioned second fixed resistance 22 further reduced thereupon.Above-mentioned judgement has aphlogistic threshold value Vth1 to be set to can discern the magnitude of voltage of detection voltage Vin because of having or not this changed by light.
Different therewith, with semiconductor light receiving element (photodiode) 11 reversal connections the time, prevent that by above-mentioned reversal connection from cutting off to the power supply of semiconductor light receiving element (photodiode) 11 with diode 14 and then cut off power supply to sensor head 10, therefore, above-mentioned dark current adding circuit 12 can not play a role, therefore, even under dark (no flame) state, can not reduce from above-mentioned driving voltage Vd at the voltage Vin that tie point produced of above-mentioned first fixed resistance 21 and second fixed resistance 22 yet.Above-mentioned reversal connection detects to be set to threshold value Vth2 can discern the magnitude of voltage of detection voltage Vin because of the difference that has or not this reversal connection and change.Under the state of reversal connection, even there is flame, because semiconductor light receiving element (photodiode) 11 self is not worked, so can not obtain its output, therefore, the detection voltage Vin that puts on driving voltage Vd can not change.Therefore, judge such state, can detect sensor head 10, be the reversal connection of semiconductor light receiving element (photodiode) 11 by detecting with threshold value Vth2 with above-mentioned reversal connection.
When normally being connected semiconductor light receiving element (photodiode) 11 on the pick-up unit main body 20, as long as this semiconductor light receiving element (photodiode) 11 normally plays a role, just there is the internal driving that comprises above-mentioned dark current adding circuit 12, therefore, even the maximum flame detection signal (electric current) of semiconductor light receiving element (photodiode) 11 outputs can not be low to moderate 0V at the voltage Vin that tie point produced of above-mentioned first fixed resistance 21 and second fixed resistance 22 yet.But, the fault if semiconductor light receiving element (photodiode) 11 is short-circuited, then no matter whether there is dark current adding circuit 12, the short circuit through preventing reversal connection usefulness diode 14 between the two ends of second fixed resistance 22, therefore, the voltage Vin that tie point produced of above-mentioned first fixed resistance 21 and second fixed resistance 22 is reduced to 0V quickly.Above-mentioned short trouble detects with threshold value Vth3 and is set to the magnitude of voltage that can discern the difference that detection voltage Vin changes because of the short trouble that has or not this semiconductor light receiving element (photodiode) 11.
So, in pick-up unit main body 20, have or not flame according to judging as described above at the voltage Vin that tie point produced of above-mentioned first fixed resistance 21 and second fixed resistance 22, and the reversal connection of judging semiconductor light receiving element (photodiode) 11 respectively and the function of short trouble be set, thereby, can confirm the functional reliability of flame detecting device, can carry out flame again really and detect.Therefore, can reliability well and stably carry out the burning control of oil burner etc.
And, the invention is not restricted to above-mentioned embodiment.At this, the fixed resistance that will be connected in parallel with semiconductor light receiving element (photodiode) 11 example as dark current adding circuit 12 is shown for example, can certainly be as described above, make the electric current output characteristics of current amplifier 11b variable.Certainly, the dark current of addition is made as much, can sets according to the specification of semiconductor light receiving element (photodiode) 11, the specification of pick-up unit main body 20.For being suitable for adopting other semiconductor light receiving elements except Si can be suitable for too as the situation of light receiving unit.In addition, in the scope that does not break away from main points of the present invention, can carry out various distortion to the present invention and be implemented.

Claims (4)

1. flame detecting device, have semiconductor light receiving element and pick-up unit main body, this semiconductor light receiving element is used for the visible light that flame detection is sent, this pick-up unit main body provides its driving voltage by cable to above-mentioned semiconductor light receiving element, and judge by the flame detection signal that above-mentioned cable detection is received by above-mentioned semiconductor light receiving element to have or not flame, wherein:
Near above-mentioned semiconductor light receiving element, be provided with: the dark current adding circuit, it is used for dark current is added in by the detected flame detection signal of above-mentioned semiconductor light receiving element, reduces the impedance under the dark state of above-mentioned detection device main body side when above-mentioned cable is observed above-mentioned semiconductor light receiving element; And filter circuit, it is used to postpone the response of above-mentioned semiconductor light receiving element.
2. flame detecting device according to claim 1 is characterized in that:
The amplifier that above-mentioned semiconductor light receiving element has photodiode and is used for the output of this photodiode is amplified.
3. flame detecting device according to claim 1 is characterized in that:
The above-mentioned detection device main body has first resistor and second resistor that is connected with driving power again after being connected in series, and is connected in parallel to above-mentioned semiconductor light receiving element by above-mentioned cable between the two ends of above-mentioned first resistor or above-mentioned second resistor,
By above-mentioned first resistor and above-mentioned second resistor supply voltage is carried out the driving voltage that electric resistance partial pressure generates above-mentioned semiconductor light receiving element, and have or not flame by judge that the voltage that produces is judged on the tie point of above-mentioned first resistor and above-mentioned second resistor.
4. flame detecting device according to claim 1 is characterized in that:
Above-mentioned dark current adding circuit is made of the resistor that is connected in parallel with above-mentioned semiconductor light receiving element.
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JP2007004521A JP5042637B2 (en) 2007-01-12 2007-01-12 Flame detection device
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