CN101212125A - Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser - Google Patents
Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser Download PDFInfo
- Publication number
- CN101212125A CN101212125A CN 200610169748 CN200610169748A CN101212125A CN 101212125 A CN101212125 A CN 101212125A CN 200610169748 CN200610169748 CN 200610169748 CN 200610169748 A CN200610169748 A CN 200610169748A CN 101212125 A CN101212125 A CN 101212125A
- Authority
- CN
- China
- Prior art keywords
- tube core
- laser tube
- quantum dot
- based semiconductor
- semiconductor quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a detection method for the quality of a laser tuber core of GaAs-based semiconductor quantum point. The invention is characterized by comprising the following steps: step 1, a lead wire of the laser tube core is welded on a sample shelf; step 2, the sample shelf is adjusted to cause the light to shine in vertical to the laser tube core; step 3, the lead wire of the sample shelf is accessed in the circuit of the photocurrent of the detection system and determines that the laser tube core is in the state of reverse bias 0V; step 4, the photocurrent curve of the laser tube core is detected; step 5, the output voltage of the external power is adjusted to increase the external connection offset voltage of the tube core according to the step L; step 6, the signal-to-noise ratio is detected. If the signal-to-noise ratio is detected and an obvious negative change is found, the detection is stopped immediately. If no negative change happens, the step 4 is then repeated.
Description
Technical field
The present invention relates to the detection and the analytical method of GaAs based semiconductor quantum dot laser tube core quality.More precisely, be to utilize the photoelectric current spectrometry detection GaAs based semiconductor quantum dot laser tube core quality of light vertical cavity surface incident and the method for optimization analysis of related data.
Background technology
Because the limited electronics in the nanometer quantum structure, photon presents very different physical connotation in many and the body material structure, very abundant new quantum appearance and effect, this is the electronics of new principle just also, the development of opto-electronic device provides new opportunity, as developing based on the different application target, work in the quantum well of different-waveband, quantum wire and quantum dot laser, modulator and detector etc., because the restriction of its multidimensional, produce lot of superiority, narrow emission live width is then arranged as quantum dot laser, the high modulation frequency, the advantageous characteristic that high-temperature stability and low-threshold power current density etc. are unique.
GaAs base In (Ga) As quantum dot is to realize that (in industrial aspect, it can be used for the multiple manufacture fields such as welding, punching, cutting of material to the 1060nm long wavelength laser; Aspect optical-fibre communications, it is the important pumping source of fiber laser), the ideal material of 940nm long wavelength laser (it is the most effective wavelength of pumping Yb:YAG crystal) and 1300nm-1600nm long wavelength laser (the important wave band that the fiber-optic signal transmission technology is used).Especially how 1300nm-1600nm wavelength quantum dot laser that to realize high-temperature stability and low-threshold power current density has become difficult point and one of focus in recent years.
In (Ga) the As quantum dot size that realizes the 1300nm-1600nm long emission wavelength on the GaAs base is than existing bigger stress relaxation in big or the material, this introduces dislocation and defective easily in material, thereby greatly reduces its optics and electric property.According to research in recent years, the existence of defective is the major obstacle that realizes long wavelength's high-temperature stability and low threshold current density laser device.Thereby to adopt a kind of easy method fast and accurately to come detection laser die material quality be very necessary.
So far, people adopt deep level transient spectroscopy (DLTS) usually, light fluorescence (PL), and transmission electron microscope (TEM), methods such as I-V characteristic come the quantum dot laser performance is studied.Every kind of method all has its superiority-inferiority.Though the DLTS method can detect the kind and the relevant parameter of defective in the material, help studying relevant physical problem, need caloric test, consuming time longer, equipment is comparatively complicated, and operation is also comparatively complicated.Though general PL method is easier fast, but sample to the quantum dot laser structure, must adopt the infrared excitation light source, and little change on the light path, the stability of excitation source intensity, the cleannes of sample surfaces and evenness etc. all have a significant impact the PL light intensity, and available less with the relevant amount of information of quality of materials.The TEM method can only be used for the research of line dislocation, can't detect the invisible defective of this class of point defect, and has shortcomings such as sample preparation difficulty, testing expense height.I-V characteristic method is to detect a kind of common method of p-i-n diode reverse characteristic, but the quality of reflection material that can only be indirect, and the reverse characteristic of diode is leaked electricity by growth, the end face of P layer and N layer material and the influence of back technology is very big.The detection and the analytical method of this GaAs based semiconductor quantum dot laser tube core quality provided herein, adopt general optogalvanic spectra testing equipment to get final product, equipment is built simply, detect fast, the defective that can directly detect in the GaAs based semiconductor quantum dot laser tube core absorbs, and can analyze the tube core quality quantitatively, visual result is understood.
Summary of the invention
The detection and the analytical method that the purpose of this invention is to provide a kind of GaAs based semiconductor quantum dot laser tube core quality, it can realize that light absorbs perpendicular to the defective that the photocurrent method of laser tube core chamber face incident detects in the GaAs based semiconductor quantum dot laser tube core, and can quantitative analysis its quality.
The invention provides a kind of detection method of GaAs based semiconductor quantum dot laser tube core quality, it is characterized in that, comprise following steps:
Step 1: with the wire bonds of laser tube core on specimen holder;
Step 2: adjust specimen holder, make light perpendicular to the face incident of laser tube core chamber;
Step 3: the lead-in wire of specimen holder is inserted the circuit of photoelectric current measuring system, and definite laser tube core is in anti-0V state partially;
Step 4: the photoelectric current curve of Laser Measurement organ pipe core;
Step 5: regulate the output voltage of external power supply, the external bias voltage of laser tube core is increased by step-length L;
Step 6: detection signal-to-noise ratio if find the obvious variation of signal to noise ratio, then stops to measure, if there is not then repeating step 4.
Wherein laser tube core is Fabry-Bai Luo chamber type GaAs based semiconductor quantum dot laser p-i-n heterojunction tube core.
Wherein laser tube core chamber face is meant the reflection end face in the Fabry-Bai Luo chamber of laser tube core.
Wherein light is meant that perpendicular to the face incident of laser tube core chamber the reflection end face in the Fabry-Bai Luo chamber of laser tube core is the shadow surface of incident light, and light is perpendicular to this chamber face incident.
Wherein laser tube core is in anti-state partially and is meant that the p face electrode of the laser tube core of p-i-n knot connects the negative pole of external power supply, and n face electrode connects the positive pole of external power supply, makes the p-i-n knot be in reverse-bias state.
Wherein the photoelectric current curve is meant the curve that photoelectric current changes with incident photon energy, and for GaAs based semiconductor quantum dot material, incident photon energy will comprise that generally GaAs band-edge energy room temperature is that following all of 1.423eV have the photon energy of photo-signal.
Wherein the measurement of photoelectric current curve is all at room temperature carried out.
The invention provides a kind of analytical method of GaAs based semiconductor quantum dot laser tube core quality, this method is to utilize the testing result of the described detection method of claim 1, it is characterized in that, comprises that step is as follows:
Step 1: the photo-signal of the photon energy correspondence below the GaAs band-edge energy in every photoelectric current curve being surveyed is done integration, and a curve correspondence draws a total integrated intensity I, and writes down added bias voltage value V when measuring curve;
Step 2: pass through formula:
Calculate the suffered electric field F of laser tube core intrinsic layer, wherein V
DBe meant the built-in potential of GaAs base p-i-n knot, about 1.5V, W
iBe meant the thickness of laser tube core intrinsic layer;
Step 3:, draw the I-F curve by the data that above-mentioned steps 1 and step 2 are drawn.The I-F curve has following rule: can be divided into three sections, first section, the suffered electric field of intrinsic layer is less, along with the increase total mark intensity I of electric field sharply increases, the 3rd section, the suffered electric field of intrinsic layer is bigger, along with the increase total mark intensity I of electric field is the linear rule that slowly increases substantially, second section, promptly middle one section, I is in the changeover portion that sharply is increased in the slow increase process;
Step 4: with straight line y=A+Bx the 3rd section linear data that increase the zone in the I-F curve are carried out match, draw the value of A and B;
Step 5: the index K0 of definition laser tube core quality is B/A.
The meaning that has
The detection of GaAs based semiconductor quantum dot laser tube core quality of the present invention and analytical method have the following advantages with respect to present method in common:
1, do not need to do caloric test, all operations all at room temperature carries out, and is time saving and energy saving.
2, be directly used in measurement of the present invention after laser tube core can having been surveyed current density threshold property and characteristic temperature, can directly study the physical cause of laser tube core characteristic quality, do not need sample preparation again, time saving and energy saving material saving, and strong with laser tube core characteristic contrast property, do not rely on the uniformity of material.
3, tube core is in reverse-bias state in the measurement, and the signal to noise ratio of measuring curve can reflect the reverse I-V characteristic of laser tube core indirectly.
4, the photoelectric current curve under a big electric field (such as 100KV/cm) can find out to quicklook whether exist defective to absorb the laser tube core.
5, after employing analytical method of the present invention is analyzed measurement result, can draw the desired value K0 of a reaction laser tube core quality, can carry out quantitative analysis the quality of laser tube core.
6, analytical method advantage applies of the present invention is as follows:
1) do not need loaded down with trivial details process of calculation analysis, be easy to grasp.
2) the index K0 with the laser tube core quality is defined as B/A, rather than B.Because the multiplication factor of the angle of the position of specimen holder in light path, light incident, stability of light source, preamplifier in the measuring process, and the waveguiding structure of laser tube core, bar is wide and the chamber is long etc. all can produce similar influence to B and A, adopt the index of B/A as the laser tube core quality, then can reduce of the influence that reliability produced of above-mentioned factor greatly, thereby improve result's accuracy analysis result.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the flow chart of the detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention;
Fig. 2 is the schematic diagram of the used measurement mechanism of the detection method of existing GaAs based semiconductor quantum dot laser tube core quality;
Light at room temperature current curve when laser tube core L1 that Fig. 3 is measured in an embodiment for the detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention and the intrinsic layer of L4 are subjected to electric field and are 100KV/cm;
Fig. 4 by the analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention in an embodiment the I-F curve of analysis laser tube core L1, the L2, L3 and the L4 that draw;
Fig. 5 for the analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention in an embodiment to the linear fit result of the 3rd segment data in the I-F curve of L1.
Embodiment
See also Figure 1 and Figure 2, the detection method of a kind of GaAs based semiconductor quantum dot laser tube core quality of the present invention, this detection method is to use measurement mechanism as shown in Figure 2, comprises following steps:
Step 1: with the wire bonds (S10 among Fig. 1) on specimen holder of laser tube core 4, this laser tube core is Fabry-Bai Luo chamber type GaAs based semiconductor quantum dot laser p-i-n heterojunction tube core;
Step 2: adjust specimen holder, make light perpendicular to the face incident of laser tube core chamber (S20 among Fig. 1), this laser tube core chamber face is meant the reflection end face in the Fabry-Bai Luo chamber of laser tube core, this light is perpendicular to the face incident of laser tube core chamber, the reflection end face that is meant the Fabry-Bai Luo chamber of laser tube core is the shadow surface of incident light, and light is perpendicular to this chamber face incident;
Step 3: the circuit that the lead-in wire of specimen holder is inserted the photoelectric current measuring system, and definite laser tube core 4 is in anti-0V state (S30 among Fig. 1) partially, this laser tube core is in anti-state partially and is meant that the p face electrode of the laser tube core of p-i-n knot connects the negative pole of external power supply, n face electrode connects the positive pole of external power supply, makes the p-i-n knot be in reverse-bias state;
Step 4: the photoelectric current curve of Laser Measurement organ pipe core 4 (S40 among Fig. 1), this photoelectric current curve is meant the curve that photoelectric current changes with incident photon energy, for GaAs based semiconductor quantum dot material, incident photon energy will comprise that generally GaAs band-edge energy room temperature is that following all of 1.423eV have the photon energy of photo-signal, and the measurement of this photoelectric current curve is all at room temperature carried out;
Step 5: regulate the output voltage of external power supply, make the external bias voltage of laser tube core increase (S50 among Fig. 1) by step-length L;
Step 6: detection signal-to-noise ratio, if find the obvious variation of signal to noise ratio, then stop to measure (S60 among Fig. 1), if there is not then repeating step 4, measure if stop.
The analytical method of a kind of GaAs based semiconductor quantum dot laser of the present invention tube core quality, this method is to utilize the testing result of aforesaid detection method, comprises that step is as follows:
Step 1: the photo-signal of the photon energy correspondence below the GaAs band-edge energy in every photoelectric current curve being surveyed is done integration, and a curve correspondence draws a total integrated intensity I, and writes down added bias voltage value V when measuring curve;
Step 2: pass through formula:
Calculate the suffered electric field F of laser tube core intrinsic layer, wherein V
DBe meant the built-in potential of GaAs base p-i-n knot, about 1.5V, W
iBe meant the thickness of laser tube core intrinsic layer;
Step 3:, draw the I-F curve by the data that above-mentioned steps 1 and step 2 are drawn.The I-F curve has following rule: can be divided into three sections, first section, the suffered electric field of intrinsic layer is less, along with the increase total mark intensity I of electric field sharply increases, the 3rd section, the suffered electric field of intrinsic layer is bigger, along with the increase total mark intensity I of electric field is the linear rule that slowly increases substantially, second section, promptly middle one section, I is in the changeover portion that sharply is increased in the slow increase process;
Step 4: with straight line y=A+Bx the 3rd section linear data that increase the zone in the I-F curve are carried out match, draw the value of A and B;
Step 5: the index K0 of definition laser tube core quality is B/A.
Embodiment
Please consult Figure 1 and Figure 2 again, the detection method of a kind of GaAs based semiconductor quantum dot laser tube core quality of the present invention:
1, adopts method of measurement of the present invention (Fig. 1) and device shown in Figure 2.Wherein tungsten lamp 1, set of lenses 2, Michelson's interferometer 3, data acquisition circuit 8 are the main elements that constitute Fourier transformation infrared spectrometer, Fourier transformation infrared spectrometer is present general a kind of instrument, occurred high performance finished product on the market for a long time, no longer its structure and method of operation have been tired out at this and chat.4 is the laser tube core that will measure, 5 for voltage source (be used for laser tube core add anti-partially and the power supply of preamplifier is provided), 6 are preamplifier (being used for small-signal amplifies), 7 are voltmeter (voltage monitoring that is used for the tube core two ends), and 9 are computer (control and the data processing that are used for Fourier infrared spectrograph).
2, the measuring process following () of the described photoelectric current curve of detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention, become directional light from the light of tungsten lamp 1 outgoing through set of lenses 2, after Michelson's interferometer 3 modulation, be focused tube core chamber face (being the face incident of light vertical die chamber), light is absorbed by the intrinsic layer of tube core and produces photoelectric current, this photo-signal is after preamplifier 6 amplifies, gather through data acquisition circuit 8, be input to computer 9 at last, after special software carries out mathematic(al) manipulation to the data of collecting, can be converted into the photoelectric current curve; The measurement of the photoelectric current curve under each applying bias is all by the omnidistance control of computer, but the size of applying bias value is to regulate by the reading of monitoring voltage table is artificial, is convenient to the timely termination of whole measurement.
3, adopt the detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention, from anti-0V partially, by step-length 1V, measured the serial photoelectric current curve under the different bias voltages of GaAs based semiconductor quantum dot laser tube core L1, L2, L3 and L4 of 1300nm emission wavelength, incident photon energy between 0.5eV between the 1.6eV.Table 1 has been listed intrinsic layer thickness, bar wide and chamber length and the sharp situation of penetrating of laser tube core L1-L4.
It is wide and the chamber long and swash the situation of penetrating that table 1 has been listed intrinsic layer thickness, the bar of laser tube core L1, L2, L3 and L4 that the detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention surveyed in an embodiment:
Table 1
| Tube core number | L1 | L2 | L3 | L4 |
| Intrinsic layer thickness (nm) | 600 | 650 | 885 | 600 |
| Bar wide (μ m) | 120 | 120 | 120 | 100 |
| Chamber long (mm) | 1.5 | 1.5 | 3 | 3 |
| Swash the situation of penetrating (all corresponding cavity length is the laser tube core of 3mm) | Room temperature is unrealized to swash and penetrates | The room temperature pulse swashs penetrates, and penetrates but be unrealized to swash continuously | Room temperature swashs continuously penetrates, but threshold current density is greater than 1000A/cm 2 | Room temperature swashs continuously penetrates, and threshold current density is at 1000A/cm 2About |
4, the described anti-0V partially of the detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention is meant that its reading is 0V with the voltage at voltmeter monitoring laser tube core the two poles of the earth.
5, the described signal to noise ratio of detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention is meant the ratio of measured signal and noise, and reflection is the photoelectric current of tube core and the ratio of dark current in fact.
6, the obvious variation of the described signal to noise ratio of detection method of GaAs based semiconductor quantum dot laser tube core quality of the present invention is meant that the architectural feature of signal is buried among the noise substantially, this moment, the dark current of tube core was that reverse leakage current is very big, tube core has been in the edge of reverse breakdown, should stop at once measuring, avoid damaging tube core.
7, at first the photoelectric current curve of measuring is made example case study.Fig. 3 is the light at room temperature current curve when adopting the intrinsic layer of the laser tube core L1 that detection method measured of GaAs based semiconductor quantum dot laser tube core quality of the present invention and L4 to be subjected to electric field to be 100KV/cm, wherein a1 is that defective absorbs the photoelectric current peak that is produced among the laser tube core L1, a2 and a3 are with hole state in the quantum dot and the relevant photoelectric current peak of the optical transition between the electronic state, a4 absorbs relevant photoelectric current peak with exciton in the quantum well, and a5 is the relevant photoelectric current peak of band edge absorption with GaAs.If the quality of laser tube core is good, defective is few, and the optogalvanic spectra that is similar to tube core L4 is such, and what the low energy end of the photoelectric current peak a2 of corresponding quantum dot ground states can be more steep in its optogalvanic spectra drops to 0; If the poor quality of laser tube core, the defective in the tube core is more, and the optogalvanic spectra that is similar to tube core L1 is such, and the low energy end of the photoelectric current peak a2 of corresponding quantum dot ground states can occur absorbing relevant photoelectric current peak a1 with defective in its optogalvanic spectra.Through check analysis, also there is photoelectric current peak a1 in the photoelectric current curve of tube core L2 and L3, prove also to have a large amount of defectives among tube core L2 and the L3.
8, according to first three the step operation in the described step of analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention, the serial curve of being surveyed under laser tube core L1, L2, L3 and the L4 different bias voltages is handled respectively, drawn their I-F curve, as shown in Figure 4.
9, the unit of the described electric field F of analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention all adopts KV/cm.
10, each section zone in the described I-F curve law of analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention specifically defines, need to analyze in conjunction with the I-F curve of concrete laser, for tube core L1-L4, the corresponding electric field in the boundary line of first section and second section is about 25KV/cm, and the boundary line of second section and the 3rd section is about 50KV/cm.
11, according to the step 4 in the described step of analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention, the 3rd segment data in the I-F curve of laser tube core L1, L2, L3 and L4 is carried out linear fit, drawn the value of A and B respectively, be listed in the table 2.
Table 2 has been listed A, the B of laser tube core L1, L2, L3 and L4 that the analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention draws in an embodiment and the concrete numerical value of quality index value K0:
Table 2
| Tube core number | L1 | L2 | L3 | L4 |
| A | 3.84 | 4.65 | 4.71 | 4.99 |
| B | 0.0346 | 0.0119 | 0.00844 | 0.00177 |
| K0 | 9.02× 10 -3 | 2.57× 10 -3 | 1.79× 10 -3 | 3.55× 10 -4 |
12, Fig. 4 uses straight line y=3.84+0.0346x for the exemplary plot of the described step 5 of analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention, to the linear fit that carries out of the 3rd segment data in the I-F curve of tube core L1, meets fine.
13, according to the described step 5 of analytical method of GaAs based semiconductor quantum dot laser tube core quality of the present invention, drawn the concrete numerical value of the quality index K0 of laser tube core L1, L2, L3 and L 4, see Table 2.
14, the sharp numerical value of penetrating situation and tube core quality index K0 of listed tube core L1, L2, L3 and L4 in contrast table 1 and the table 2, as can be seen, the big more then laser tube core of the K0 of tube core just is not easy to swash to penetrate more, illustrates that K0 can reflect the quality of tube core quality truly.
Claims (8)
1. the detection method of a GaAs based semiconductor quantum dot laser tube core quality is characterized in that, comprises following steps:
Step 1: with the wire bonds of laser tube core on specimen holder;
Step 2: adjust specimen holder, make light perpendicular to the face incident of laser tube core chamber;
Step 3: the lead-in wire of specimen holder is inserted the circuit of photoelectric current measuring system, and definite laser tube core is in anti-0V state partially;
Step 4: the photoelectric current curve of Laser Measurement organ pipe core;
Step 5: regulate the output voltage of external power supply, the external bias voltage of laser tube core is increased by step-length L;
Step 6: detection signal-to-noise ratio, if find the obvious variation of signal to noise ratio, then stop to measure, if there is not then repeating step 4, measure if stop.
2. the detection method of GaAs based semiconductor quantum dot laser tube core quality according to claim 1 is characterized in that, wherein laser tube core is Fabry-Bai Luo chamber type GaAs based semiconductor quantum dot laser p-i-n heterojunction tube core.
3. the detection method of GaAs based semiconductor quantum dot laser tube core quality according to claim 1 is characterized in that, wherein laser tube core chamber face is meant the reflection end face in the Fabry-Bai Luo chamber of laser tube core.
4. the detection method of GaAs based semiconductor quantum dot laser tube core quality according to claim 1, it is characterized in that, wherein light is perpendicular to the face incident of laser tube core chamber, the reflection end face that is meant the Fabry-Bai Luo chamber of laser tube core is the shadow surface of incident light, and light is perpendicular to this chamber face incident.
5. the detection method of GaAs based semiconductor quantum dot laser tube core quality according to claim 1, it is characterized in that, wherein laser tube core is in anti-state partially and is meant that the p face electrode of the laser tube core of p-i-n knot connects the negative pole of external power supply, n face electrode connects the positive pole of external power supply, makes the p-i-n knot be in reverse-bias state.
6. the detection method of GaAs based semiconductor quantum dot laser tube core quality according to claim 1, it is characterized in that, wherein the photoelectric current curve is meant the curve that photoelectric current changes with incident photon energy, for GaAs based semiconductor quantum dot material, incident photon energy will comprise that generally GaAs band-edge energy room temperature is that following all of 1.423eV have the photon energy of photo-signal.
7. the detection method of GaAs based semiconductor quantum dot laser tube core quality according to claim 1 is characterized in that wherein the measurement of photoelectric current curve is all at room temperature carried out.
8. the analytical method of a GaAs based semiconductor quantum dot laser tube core quality, this method is to utilize the testing result of the described detection method of claim 1, it is characterized in that, comprises that step is as follows:
Step 1: the photo-signal of the photon energy correspondence below the GaAs band-edge energy in every photoelectric current curve being surveyed is done integration, and a curve correspondence draws a total integrated intensity I, and writes down added bias voltage value V when measuring curve;
Step 2: pass through formula:
Calculate the suffered electric field F of laser tube core intrinsic layer, wherein V
DBe meant the built-in potential of GaAs base p-i-n knot, about 1.5V, W
iBe meant the thickness of laser tube core intrinsic layer;
Step 3:, draw the I-F curve by the data that above-mentioned steps 1 and step 2 are drawn.The I-F curve has following rule: can be divided into three sections, first section, the suffered electric field of intrinsic layer is less, along with the increase total mark intensity I of electric field sharply increases, the 3rd section, the suffered electric field of intrinsic layer is bigger, along with the increase total mark intensity I of electric field is the linear rule that slowly increases substantially, second section, promptly middle one section, I is in the changeover portion that sharply is increased in the slow increase process;
Step 4: with straight line y=A+BX the 3rd section linear data that increase the zone in the I-F curve are carried out match, draw the value of A and B;
Step 5: the index K0 of definition laser tube core quality is B/A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610169748 CN101212125A (en) | 2006-12-28 | 2006-12-28 | Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610169748 CN101212125A (en) | 2006-12-28 | 2006-12-28 | Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101212125A true CN101212125A (en) | 2008-07-02 |
Family
ID=39611882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610169748 Pending CN101212125A (en) | 2006-12-28 | 2006-12-28 | Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101212125A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103222134A (en) * | 2010-11-29 | 2013-07-24 | 古河电气工业株式会社 | Fiber laser apparatus, and method of detecting abnormality of fiber laser apparatus |
| CN103257036A (en) * | 2013-05-21 | 2013-08-21 | 福州大学 | Method for measuring cavity mode split of vertical cavity surface emitting laser under room temperature condition |
| CN103258757A (en) * | 2013-04-28 | 2013-08-21 | 华东师范大学 | Encapsulating and testing method of quantum effect photoelectric detection array and reading circuit |
| CN105890874A (en) * | 2016-05-25 | 2016-08-24 | 深圳市创鑫激光股份有限公司 | Fault detection method and device of fiber laser |
| CN106560910A (en) * | 2015-10-01 | 2017-04-12 | 万润科技股份有限公司 | Tube core defect detection method and device |
-
2006
- 2006-12-28 CN CN 200610169748 patent/CN101212125A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103222134A (en) * | 2010-11-29 | 2013-07-24 | 古河电气工业株式会社 | Fiber laser apparatus, and method of detecting abnormality of fiber laser apparatus |
| CN103222134B (en) * | 2010-11-29 | 2015-08-19 | 古河电气工业株式会社 | The method for detecting abnormality of fiber laser device and fiber laser device |
| CN103258757A (en) * | 2013-04-28 | 2013-08-21 | 华东师范大学 | Encapsulating and testing method of quantum effect photoelectric detection array and reading circuit |
| CN103258757B (en) * | 2013-04-28 | 2015-10-28 | 华东师范大学 | The packaging and testing method of quantum effect photoelectronic detecting array and reading circuit |
| CN103257036A (en) * | 2013-05-21 | 2013-08-21 | 福州大学 | Method for measuring cavity mode split of vertical cavity surface emitting laser under room temperature condition |
| CN103257036B (en) * | 2013-05-21 | 2016-01-27 | 福州大学 | The method of vertical cavity surface emitting laser chamber mould splitting is measured under a kind of room temperature |
| CN106560910A (en) * | 2015-10-01 | 2017-04-12 | 万润科技股份有限公司 | Tube core defect detection method and device |
| CN105890874A (en) * | 2016-05-25 | 2016-08-24 | 深圳市创鑫激光股份有限公司 | Fault detection method and device of fiber laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102331403B (en) | Characterization method and test device for near-field terahertz THz time domain spectrum | |
| CN111398231B (en) | Scanning detection system based on diamond NV color center | |
| CN1132015C (en) | Non-destructive measuring method for minotiry carrier diffusion length and life of semiconductor device | |
| CN101212125A (en) | Method for quality testing and analysis of tube core of GaAs-based semiconductor quantum dot laser | |
| CN106198489B (en) | A kind of molecule knot optical near-field microscopic system and its building method | |
| CN113008849B (en) | Ultraviolet-near infrared broadband micro-region photoluminescence spectrum testing device | |
| CN108827914B (en) | Terahertz transient absorption spectrum detection system and carrier life measuring method | |
| CN103575504A (en) | Optical time-domain reflectometer based on superconductivity nanowire single photon detector | |
| CN105738374A (en) | System and method for testing damage property of absorption defect of optical element | |
| CN105572915A (en) | Electro-optical modulator optical pulse shaping apparatus and shaping method introducing reference light | |
| CN112485235B (en) | Transmission electron microscope sample rod system with ultrafast time resolution spectral capability and application | |
| CN103543130B (en) | Method for eliminating system frequency response influence of semiconductor material characteristic measuring device in photocarrier radiation technology | |
| CN112179507B (en) | Method for measuring optical second-order correlation function based on single-photon detector | |
| CN106770181A (en) | A kind of multifocal point type Raman spectrum Acquisition Instrument based on diffraction optical element | |
| CN102937585A (en) | Device and method for measuring forbidden bandwidth of direct band gap semiconductor material | |
| CN201725011U (en) | Alternating Current (AC) measuring device of solar battery quantum efficiency | |
| CN203572631U (en) | Optical time-domain reflectometer based on superconducting nanowire single-photon detector | |
| CN103969263A (en) | Minority carrier lifetime tester based on high-frequency photoconduction attenuation | |
| CN101871992A (en) | Alternating current measuring device for quantum efficiency of solar battery and using method thereof | |
| US9377300B2 (en) | Photoreflectance device | |
| CN105588826A (en) | Femtosecond time resolution multi-channel lock-phase fluorescence spectrophotometer based on optical parametric amplification | |
| CN101893679A (en) | Direct-current measuring device for quantum efficiency of solar cell and using method thereof | |
| CN105181131A (en) | Laser power measuring method | |
| CN2784920Y (en) | Near field laser thermal lens spectrometry instrument | |
| CN106990051A (en) | Metal material sheet electron information lossless detection means and detection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080702 |