CN101212015A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN101212015A CN101212015A CNA2007103013944A CN200710301394A CN101212015A CN 101212015 A CN101212015 A CN 101212015A CN A2007103013944 A CNA2007103013944 A CN A2007103013944A CN 200710301394 A CN200710301394 A CN 200710301394A CN 101212015 A CN101212015 A CN 101212015A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract
The present invention relates to a luminescent device, which includes LED, setting on a substrate for emitting light of a first wavelength. A transparent molding element encloses the LED, a lower wavelength transferring material layer is set on the transparent molding element, and an upper wavelength transferring material layer is set on the lower wavelength transferring material layer. The lower wavelength transferring material layer contains phosphorescence body for transferring the light of the first wavelength into light of a second wavelength longer than the first wavelength, the upper wavelength transferring material layer contains phosphorescence body for transferring the light of the first wavelength into light of a third wavelength, the third wavelength is longer than the first wavelength and smaller than the second wavelength. Preventing the light generated by wavelength transferring from losing when passing thought the phosphorescence body. The present invention also discloses a luminescent device containing a plurality of reflectors.
Description
Technical field
The present invention relates to a kind of light-emitting device, and more particularly, relate to a kind of can preventing from light-emitting diode emission or the light-emitting device in light-emitting device, lost via the light that wavelength Conversion produces.
Background technology
Can realize shades of colour and be used for various application with the light-emitting device of compound semiconductor light-emitting diode manufacturing, comprise lamp, electronic data display and display.In particular, because light-emitting device can be realized white light, so it is used for the light source of general lighting and display panels.
Substantially, can pass through blue light-emitting diode (blue light emitting diode, LED) combination with phosphor obtains white light, and discloses an example based on the light-emitting device of blue LED and YAG phosphor realization white light in 2002-064220 Japanese Patent Laid Open Publication case.Yet the technology of this invention realizes white light by mixing blue light and gold-tinted, and owing to lack the interior light of red wavelength range, and representing more weak attribute aspect color reproduction and the color rendering characteristic.On the other hand, can realize white light by three LED that comprise blue LED, green LED and red LED, but in the case, because narrower from LED wavelength of light emitted scope, so although light-emitting device has good color reproduction ability, but still represent more weak color rendering characteristic.
In order to address the above problem, 2004/0207313A1 U.S. Patent Publication case discloses a kind of light-emitting device, and it comprises blue LED, green phosphor and phosphor to realize white light, comprises that perhaps red LED and blue LED and phosphor are to realize white light.According to this invention, seal blue LED by the translucent resin that contains green phosphor and phosphor, thus the white light that realization has good color reproduction ability and color rendering characteristic.In addition, can improve the color reproduction ability by adopting blue LED, green phosphor and red LED.At this moment, the translucent resin that contains green phosphor seals blue LED, and will be converted to green glow from the sub-fraction of the light of blue LED emission.In addition, have an example of light-emitting device, it comprises blue LED, red LED and ultraviolet LED, makes ultraviolet LED be sealed to realize white light by the translucent resin that contains green phosphor.
For the light-emitting device that comprises blue LED, green phosphor and phosphor as disclosing in the 2004/0207313A1 U.S. Patent Publication case, because green phosphor is dispersed in the identical translucent resin with phosphor, therefore the green glow from green phosphor emission is tending towards being absorbed by phosphor.Substantially, according to the wavelength that excites, phosphor represents different wavelength conversion efficiencies.For instance, phosphor is in order to carrying out from the light of the blue LED emission wavelength Conversion to ruddiness, and therefore represents the good wavelength conversion efficiency from the blue light to ruddiness.Therefore, the major part that absorbs the green glow in the phosphor is all lost by being converted to heat.Therefore, under green phosphor and phosphor all are included in situation in the translucent resin, the shortage of light-emitting device experience green glow, and experience the reduction of luminous efficiency owing to wherein losing a large amount of light.
In addition, the light that produces via the wavelength Conversion in the phosphor can enter blue LED once more.After entering blue LED, light passes through blue LED, and can be absorbed (and therefore losing) in the bottom surface of the substrate that described blue LED is installed, thereby can further reduce luminous efficiency.
For the light-emitting device that further comprises red LED, can enter the translucent resin that contains phosphor from least one fraction of the light of red LED emission, and other parts can enter blue LED or ultraviolet LED.When ruddiness entered translucent resin, light is excitation phosphor not, but owing to the diffuse reflection from phosphor is lost.In addition, when ruddiness entered blue LED or shortwave light LED, it may be owing to the reflection in these LED is lost.Therefore, the intensity of ruddiness reduces, and this must need to increase drive current the reducing with the compensation red light intensity of number or the red LED of red LED.
Summary of the invention
The present invention is solving the problem of above-mentioned routine techniques in design, and an aspect of of the present present invention provides a kind of light that can prevent to produce via wavelength Conversion by absorbing the light-emitting device of losing in the phosphor.
Another aspect of the present invention provides a kind of light that can prevent to produce via wavelength Conversion by reentering the light-emitting device that LED loses.
Another aspect of the present invention provides and a kind ofly can prevent that light from the LED emission that is used to launch long wavelength light is by being used to launch the LED of short-wavelength light or the light-emitting device of losing by phosphor.
According to an aspect of the present invention, a kind of light-emitting device comprises a plurality of material for transformation of wave length layers.Described light-emitting device comprises light-emitting diode, and it is arranged on the substrate to launch the light of first wavelength.The transparent mould workpieces seals described light-emitting diode, and bottom material for transformation of wave length layer is arranged on the described transparent mould workpieces, and top material for transformation of wave length layer is arranged on the material for transformation of wave length layer of described bottom.Described bottom material for transformation of wave length layer contains and is useful on the phosphor that will convert to from the light of described first wavelength of light-emitting diode emission than the light of long second wavelength of described first ripple, and described top material for transformation of wave length layer contains and is useful on the phosphor that will convert to from the light of described first wavelength of light-emitting diode emission than the light of the long three-wavelength of first ripple.Here, three-wavelength is shorter than described second wavelength.Therefore, can prevent to lose by described phosphor via the light that the wavelength Conversion by the material for transformation of wave length layer produces.In addition, the transparent mould workpieces is inserted between described bottom material for transformation of wave length layer and the light-emitting diode, so that prevent to reenter light-emitting diode via the light that wavelength Conversion produces, reduces light loss whereby.
Described transparent mould workpieces, described bottom material for transformation of wave length layer and described top material for transformation of wave length layer can have identical refractive index, maybe can have the refractive index that increases by this order.Therefore, can prevent that light from light-emitting diode emission is owing to total internal reflection is lost.
Bottom material for transformation of wave length layer can comprise at least one opening, and described transparent mould workpieces exposes by described opening.Described opening is filled with described top material for transformation of wave length layer.Therefore, can enter top material for transformation of wave length layer and can not pass through bottom material for transformation of wave length layer from the sub-fraction of the light of light-emitting diode emission, to excite the phosphor that contains in the material for transformation of wave length layer of top.
The light of described first wavelength can be blue light, and the light of described second wavelength can be ruddiness, and the light of described three-wavelength can be green glow, thereby realizes white light.
Transparent mould workpieces and top material for transformation of wave length layer and bottom material for transformation of wave length layer can form via mould is molded, make it multiple shape to produce.
The transparent mould workpieces can have than top material for transformation of wave length layer and the low hardness of bottom material for transformation of wave length layer.In addition, material for transformation of wave length layer in top can have the hardness than bottom material for transformation of wave length floor height.For instance, the transparent mould workpieces can be formed by silicones, and top material for transformation of wave length layer and bottom material for transformation of wave length layer can be formed by epoxy resin.
The lower dielectric multilayer mirror can be inserted between described transparent mould workpieces and the described bottom material for transformation of wave length layer, and the upper dielectric multilayer mirror can be inserted between described bottom material for transformation of wave length layer and the described top material for transformation of wave length layer.The lower dielectric multilayer mirror can have the dielectric layer of high index and the dielectric layer that has than low-refraction forms by repeated deposition, thereby represents high reflection.Therefore, the light that prevents the three-wavelength that produces via the wavelength Conversion in the material for transformation of wave length layer of top enters bottom material for transformation of wave length layer, and prevents that the light of second wavelength that produces via the wavelength Conversion in the material for transformation of wave length layer of bottom from entering the transparent mould workpieces.
In the dielectric layer in the described lower dielectric multilayer mirror each can have satisfied (2m-1) λ
2/ 4n
2(n wherein
2Indicate each refractive index of described dielectric layer, λ
2Indicate described second wavelength, and m indication is more than or equal to 1 integer) thickness of relation, and in the dielectric layer in the described upper dielectric multilayer mirror each can have satisfied (2k-1) λ
3/ 4n
3(n wherein
3Indicate each refractive index of described dielectric layer, λ
3Indicate described three-wavelength, and k indication is more than or equal to 1 integer) thickness of relation.Preferably, m and the k in each relation is 1.
In addition, bottom material for transformation of wave length layer can have at least one opening, and described transparent mould workpieces exposes by described opening, and described opening can be filled with described top material for transformation of wave length layer.At this moment, the upper dielectric multilayer mirror may extend in the described opening, to be inserted between the described transparent mould workpieces and described top material for transformation of wave length layer in the described opening.
According to a further aspect in the invention, a kind of light-emitting device comprises the dielectric multilayer speculum.Described light-emitting device comprises first light-emitting diode, and it is arranged on the substrate to launch the light of first wavelength.Material for transformation of wave length seals described first light-emitting diode.Described material for transformation of wave length contains and is useful on carry out the phosphor of wavelength Conversion from the sub-fraction of the light of described first light-emitting diode emission.Second light-emitting diode separates with described material for transformation of wave length and is arranged on the described substrate.Described second light-emitting diode emission is than the light of long second wavelength of described first ripple.The dielectric multilayer speculum is formed on the described material for transformation of wave length.Described dielectric multilayer speculum comprises at least one pair of dielectric layer, and one of them dielectric layer has high index and another dielectric layer has than low-refraction, and reflection is incident on the light of described second wavelength on the described material for transformation of wave length.Therefore, can prevent that entering material for transformation of wave length from the light of second light-emitting diode emission also loses therein, improves the luminous efficiency of the light of second wavelength whereby.
In the described dielectric layer each can have the thickness " d " that satisfies d=(2m-1) λ/4n (wherein n indicates each refractive index of described dielectric layer, and λ indicates described second wavelength, and the m indication is more than or equal to 1 integer) relation.Preferably, m is 1.
Light-emitting device can further comprise sealing resin, and it seals described material for transformation of wave length and described second light-emitting diode.At this moment, the refractive index of described sealing resin can be lower than described dielectric layer with high index.
In certain embodiments, light-emitting device can further comprise another second light-emitting diode, and it is center and the described second light-emitting diode symmetry with described first light-emitting diode.So, be symmetrical arranged because second light-emitting diode centers on first light-emitting diode, so light-emitting device can realize having the mixed light of uniform luminance.
In certain embodiments, the dielectric multilayer speculum can partly be formed on the described material for transformation of wave length.Therefore, can be when it enters material for transformation of wave length from the light of second light-emitting diode emission by mirror reflects, and also can reduce the loss (may cause) of the light that produces from the light of first light-emitting diode emission and via the wavelength Conversion of phosphor by speculum.
Material for transformation of wave length can be the material layer that is formed on the described light-emitting diode and has uniform thickness.
First light-emitting diode can be launched has 490nm or the more blue light or the ultraviolet rays of small leak wavelength, and second light-emitting diode can be launched the ruddiness with 580nm or bigger peak wavelength.
Description of drawings
By the description of preferred embodiments that hereinafter provides in conjunction with the accompanying drawings, will understand above and other objects of the present invention, feature and advantage, in the accompanying drawing:
Fig. 1 is the cross-sectional view of light-emitting device according to comprising of first embodiment of the invention of a plurality of material for transformation of wave length layers.
Fig. 2 is the cross-sectional view of light-emitting device according to comprising of second embodiment of the invention of a plurality of material for transformation of wave length layers.
Fig. 3 is the cross-sectional view of light-emitting device according to comprising of third embodiment of the invention of a plurality of material for transformation of wave length layers.
Fig. 4 is the cross-sectional view according to the light-emitting device that comprises the dielectric multilayer speculum of fourth embodiment of the invention.
Fig. 5 is that the part of the A part of Fig. 4 is amplified cross-sectional view.
Fig. 6 is the cross-sectional view according to the light-emitting device that comprises the dielectric multilayer speculum of fifth embodiment of the invention.
Fig. 7 is the cross-sectional view according to the light-emitting device that comprises the dielectric multilayer speculum of sixth embodiment of the invention.
Fig. 8 is the cross-sectional view according to the light-emitting device that comprises the dielectric multilayer speculum of seventh embodiment of the invention.
Embodiment
Hereinafter will describe one exemplary embodiment of the present invention in detail referring to accompanying drawing.Only provide following examples and understand spirit of the present invention fully to help the those skilled in the art in the explanation mode.Therefore, should note the invention is not restricted to embodiment described herein, and can realize by various forms.In addition, graphic not accurately drafting in proportion, and assembly wherein may be exaggerated at aspects such as thickness, width, length.Herein, similar or identical reference number in whole figure with representation class like or identical assembly.
Fig. 1 is the cross-sectional view of light-emitting device according to comprising of first embodiment of the invention of a plurality of material for transformation of wave length layers.
Referring to Fig. 1, (1ight emitting diode LED) 23 is installed on the substrate 20 light-emitting diode.Substrate 20 can be printed circuit board (PCB) 20, and in this embodiment, it comprises lead-in wire electrode 21a and 21b.Yet any substrate of its optional self-contained lead frame, fin, plastic packaging body etc. and be not limited to specific substrate is as long as it allows above light-emitting diode is installed in.Can form light-emitting diode based on the compound semiconductor layer of indium gallium nitride by growth on the substrate that forms by for example sapphire, carborundum, spinelle or analog, and it can launch ultraviolet rays or the blue light light as first wavelength.
LED23 can be attached to lead-in wire electrode 21a and be electrically connected to lead-in wire electrode 21b by joint line via electroconductive binder (not shown).Perhaps, LED23 can be electrically connected to lead-in wire electrode 21a and 21b by two joint lines, maybe can be attached to subbase seat (not shown) and be electrically connected to lead-in wire electrode 21a and 21b via the subbase seat.
Bottom material for transformation of wave length layer 27 is arranged on the transparent mould workpieces 25.Bottom material for transformation of wave length layer 27 contains the phosphor that the light from first wavelength of LED23 emission can be converted to the light of second wavelength.Light ratio first wavelength of second wavelength is longer.For instance, if the light of first wavelength is ultraviolet rays or blue light, the light of second wavelength can be ruddiness so.Therefore, become the light of second wavelength by the phosphor converted that comprises the bottom material for transformation of wave length layer 27 from the part of the light of first wavelength of LED23 emission.
In addition, top material for transformation of wave length layer 29 is arranged on the bottom material for transformation of wave length layer 27.Top material for transformation of wave length layer 27 contains the phosphor that the light from first wavelength of LED 23 emission can be converted to the light of three-wavelength.Light ratio first wavelength of three-wavelength is longer, but shorter than the light of second wavelength.For instance, if the light of second wavelength is ruddiness, the light of three-wavelength can be green glow so.
Owing to phosphor is generally also launched the light with wavelength longer than exciting light by excitation, therefore having can't excitation phosphor when it enters phosphor than the light of the long wavelength of launching of ripple.Therefore, the light of second wavelength that produces via the wavelength Conversion in the phosphor that comprises in the bottom material for transformation of wave length layer 27 has the wavelength longer than the phosphor wavelength of light emitted that contains from top material for transformation of wave length layer 29, and therefore can't excite the phosphor that contains in the top material for transformation of wave length layer 29.Therefore, the light of second wavelength that produces via the wavelength Conversion in the bottom material for transformation of wave length layer 27 can be transmitted into the outside after top material for transformation of wave length layer 29 is crossed in transmission.
Top material for transformation of wave length layer 29 and bottom material for transformation of wave length layer 27 can be by forming with transparent mould workpieces 25 identical materials, but are not limited thereto, and it can be formed by the material different with transparent mould workpieces 25.At this moment, bottom material for transformation of wave length layer 27 preferably forms by having than transparent mould workpieces 25 high refractive index materials.In addition, top material for transformation of wave length layer 29 can form by having with bottom material for transformation of wave length layer 27 material identical or more high index of refraction.Therefore, can prevent that light from LED 23 emission is owing to the total internal reflection that the interface between the interface between transparent mould workpieces 25 and the bottom material for transformation of wave length layer 27 or bottom material for transformation of wave length layer 27 and the top material for transformation of wave length layer 29 causes is lost.In addition, can reduce reentering of the inside light that produces via the wavelength Conversion by top material for transformation of wave length layer 29 and bottom material for transformation of wave length layer 27.
In addition, top material for transformation of wave length layer 29 and bottom material for transformation of wave length layer 27 can be formed by hardness ratio transparent mould workpieces 25 high materials.For instance, when transparent mould workpieces 25 was formed by silicones, top material for transformation of wave length layer 29 and bottom material for transformation of wave length layer 27 can the epoxy resin of phosphor forms by containing separately.By this configuration, can prevent that transparent mould workpieces 25 from separating with substrate 20, protects LED not to be subjected to damage simultaneously.
According to this embodiment, contain and be useful on the LED 23 that the bottom material for transformation of wave length layer 27 that for example blue light is converted to the phosphor of ruddiness is arranged on the emission blue light, and contain and be useful on the top material for transformation of wave length layer 29 that blue light is converted to the phosphor of green glow and be arranged on the bottom material for transformation of wave length layer 27, realize white light whereby.Perhaps, when LED 23 emission ultraviolet rays, light-emitting device comprises: bottom material for transformation of wave length layer 27 wherein contains and is useful on the phosphor that ultraviolet rays is converted to ruddiness; Top material for transformation of wave length layer 29 wherein contains and is useful on the phosphor that ultraviolet rays is converted to green glow; And extra material for transformation of wave length layer (not shown), wherein contain and be useful on the phosphor that ultraviolet rays is converted to blue light, realize white light whereby.
The phosphor that contains in top material for transformation of wave length layer 29 and the bottom material for transformation of wave length layer 27 is not limited to the phosphor of particular types, and for example can comprise phosphor based on YAG, based on the phosphor of silicate, based on phosphor of thiogallate etc.In particular, phosphor can be the compound that contains lead or copper, for example contains the silicate phosphors of plumbous and copper, such as the 10-2005-0117164 Korean Patent disclose in early days in the case announcement.
Fig. 2 is the cross-sectional view of light-emitting device according to comprising of second embodiment of the invention of a plurality of material for transformation of wave length layers.
Referring to Fig. 2, have the identical general configuration of configuration with the illustrated light-emitting device of Fig. 1 according to the light-emitting device of this embodiment, difference is that the bottom material for transformation of wave length layer 27 of second embodiment comprises opening 27a.Opening 27a exposes transparent mould workpieces 25 and is filled with top material for transformation of wave length layer 29.
Therefore, enter top material for transformation of wave length layer 29 the opening 27a from the sub-fraction of the light of LED 23 emission, and can not pass through bottom material for transformation of wave length layer 27.Therefore, excite the amount of the light of the phosphor in the top material for transformation of wave length layer 29 to increase.
Bottom material for transformation of wave length layer 27 can have a plurality of opening 27a, and described a plurality of opening 27a can be dispersed in wherein, to excite the phosphor in the top material for transformation of wave length layer 29 equably.
Fig. 3 is the cross-sectional view of light-emitting device according to comprising of third embodiment of the invention of a plurality of material for transformation of wave length layers.
Referring to Fig. 3, the light-emitting device of this embodiment comprises the LED 23 that is installed on the substrate 20, the transparent mould workpieces 25 of being arranged to seal LED 23, and bottom material for transformation of wave length layer 27 on the transparent mould workpieces 25 and top material for transformation of wave length layer 29.Here, between transparent mould workpieces 25 and bottom material for transformation of wave length layer 27, form lower dielectric multilayer mirror 26, and between bottom material for transformation of wave length layer 27 and top material for transformation of wave length layer 29, form upper dielectric multilayer mirror 28.
Lower dielectric multilayer mirror 26 comprises at least one pair of low-refraction dielectric layer 26a and high index of refraction dielectric layer 26b.Here, bottom material for transformation of wave length layer 27 has the low refractive index than high index of refraction dielectric layer 26b.Speculum 26 comprises described at least one pair of low-refraction dielectric layer 26a and high index of refraction dielectric layer 26b, its each have satisfied (2m-1) λ
2/ 4n
2(n wherein
2Indicate the refractive index of each dielectric layer, λ
2Indicate second wavelength, and m indication is more than or equal to 1 integer) thickness of relation, to reflect the light of second wavelength.Preferably, the thickness of each dielectric layer is λ
2/ 4n
2, that is, m is at (2m-1) λ
2/ 4n
2Relation in be 1.When dielectric layer 26a that piles up and 26b number is increased, speculum 26 increases with respect to the reflection of light of second wavelength.Simultaneously, speculum 26 represents light transmission features with respect to the light from the LED23 emission.
In addition, upper dielectric multilayer mirror 28 comprises at least one pair of low-refraction dielectric layer 28a and high index of refraction dielectric layer 28b.Top material for transformation of wave length layer 29 has the low refractive index than high index of refraction dielectric layer 28b.Speculum 28 also comprises described at least one pair of low-refraction dielectric layer 28a and high index of refraction dielectric layer 28b, its each have satisfied (2k-1) λ
3/ 4n
3(n wherein
3Indicate the refractive index of each dielectric layer, λ
3Indicate three-wavelength, and k indication is more than or equal to 1 integer) thickness of relation, to reflect the light of three-wavelength.Preferably, the thickness of each dielectric layer is λ
3/ 4n
3, that is, k is at (2k-1) λ
3/ 4n
3Relation in be 1.When dielectric layer 28a that piles up and 28b number is increased, speculum 28 increases with respect to the reflection of light of three-wavelength.On the other hand, speculum 28 represents light transmission features with respect to the light of second wavelength and the light of launching from LED 23.
Therefore, the light that prevents the three-wavelength that produces via the wavelength Conversion in the top material for transformation of wave length layer 29 by upper dielectric multilayer mirror 28 enters bottom material for transformation of wave length layer 27, and prevents that by lower dielectric multilayer mirror 26 light of second wavelength that produces via the wavelength Conversion in the bottom material for transformation of wave length layer 27 from entering transparent mould workpieces 25.
In this embodiment, bottom material for transformation of wave length layer 27 also can have the opening that is formed at wherein, and as shown in Figure 2, and described opening can be filled with top material for transformation of wave length layer 29.At this moment, the upper dielectric multilayer mirror 28 extensible openings that enter are to be inserted between the top material for transformation of wave length layer 29 and transparent mould workpieces 25 in the opening.
Fig. 4 is the cross-sectional view according to the light-emitting device that comprises the dielectric multilayer speculum of fourth embodiment of the invention.
Referring to Fig. 4, light-emitting device comprises a LED 51 of the light of launching first wavelength, for example is positioned at emission on the substrate 50 and has the 490nm or the blue LED of the blue light of small leak wavelength more.Substrate 50 is identical with the substrate 20 of embodiment shown in Figure 1.In addition, can form a LED51 based on the compound semiconductor layer of indium gallium nitride by growth on the substrate that forms by for example sapphire, carborundum, spinelle or analog.
Form material for transformation of wave length 55 to seal blue LED51.Material for transformation of wave length 55 contains the phosphor that the sub-fraction from the blue light of blue LED51 emission can be converted to the light (for example, green glow or gold-tinted) of other wavelength.Can pass through curing transparent resin (for example, silicones or epoxy resin) and form material for transformation of wave length 55.Material for transformation of wave length 55 can have hemispherical shape as shown in Figure 4, but is not limited thereto, and can comprise the multiple shape formation of rectangular shape, trapezoidal shape etc.
Fig. 5 is that the part of the A part of Fig. 4 is amplified cross-sectional view.
Referring to Fig. 5, dielectric multilayer speculum 60 is formed on the material for transformation of wave length 55 simultaneously.Speculum 60 comprises at least one pair of dielectric layer 61 and 63, and wherein dielectric layer 61 has high index and dielectric layer 63 has than low-refraction.Dielectric multilayer speculum 60 can have by a plurality of of high index of refraction dielectric layer 61a and 61b and low- refraction dielectric layer 63a and 63b are piled up the stacked structure that several times are prepared to 60a and 60b.
In addition, light-emitting device comprises the 2nd LED53, for example red LED53, and it is arranged on the substrate 50 and is spaced apart with material for transformation of wave length 55.The LED53 emission is than the light of long second wavelength of first ripple.Red LED53 is by forming the light that has the peak wavelength in 580～680nm scope with emission based on InGaP or based on the compound semiconductor of GaAs, and can be arranged to and blue LED51 coplane.
Sealing resin 70 can be set to seal red LED53 and material for transformation of wave length 55.Can form sealing resin 70 by the resin that solidifies silicones for example or epoxy resin, and can satisfy the mould cup that improves the Any shape that viewing angle and luminous efficiency require and form sealing resin 70 by having.Sealing resin 70 has the refractive index lower than high index of refraction dielectric layer 61.
Advance in all directions from the ruddiness that red LED53 is transmitted into the sealing resin 70.Some ruddiness are drawn towards material for transformation of wave length 55 and arrive speculum 60.Because speculum 60 forms and has the reflection higher with respect to ruddiness, so speculum 60 reflect red.Speculum 60 comprises at least one pair of high index of refraction dielectric layer 61 and low-refraction dielectric layer 63, its each have and satisfy d=(2m-1) λ/4n (wherein n indicates the refractive index of each dielectric layer, λ indication is from red LED wavelength of light emitted, and the m indication is more than or equal to 1 integer) thickness " d " of relation is with reflect red.Preferably, the thickness of each dielectric layer is d=λ/4n, that is, m is 1 in the relation of (2m-1) λ/4n.When the dielectric layer 61 that piles up and 63 number is increased, mirror increases with respect to the reflection of ruddiness.On the other hand, speculum 60 is with respect to representing light transmission features from the light of blue LED51 emission or the light that produces with respect to the wavelength Conversion via phosphor the material for transformation of wave length 55.
Therefore, prevent to enter material for transformation of wave length 55, can prevent that whereby ruddiness from losing in material for transformation of wave length layer 55 and blue LED51 from the ruddiness of red LED53 emission.
Fig. 6 is the cross-sectional view according to the light-emitting device of fifth embodiment of the invention.
Referring to Fig. 6, the light-emitting device of this embodiment comprises the material for transformation of wave length 55 of the blue LED51 that is arranged on the substrate 50, the blue LED51 of sealing and the red LED53 that separates with material for transformation of wave length 55 on the substrate 50, and can further comprise the sealing resin 70 among the embodiment as shown in Figure 4.
According to this embodiment, speculum 60a also comprises at least one pair of high index of refraction dielectric layer and the low-refraction dielectric layer among the embodiment as shown in Figure 4 and Figure 5.Yet different with speculum 60 shown in Figure 4, speculum 60a partly is formed on the material for transformation of wave length 55.In other words, speculum 60a is formed on the finite region of material for transformation of wave length 55 with reflection from red LED53 emission and to the light of material for transformation of wave length 55 incidents, and therefore, other zone of material for transformation of wave length 55 exposes.By this configuration, can when being transmitted into the sealing resin 70, reduce blue LED51 the light loss relevant at light with speculum 60a.
Fig. 7 is the cross-sectional view according to the light-emitting device of sixth embodiment of the invention.
Referring to Fig. 7, the light-emitting device of this embodiment comprises the material for transformation of wave length 55 of the blue LED51 that is arranged on the substrate 50, the blue LED51 of sealing and the speculum 60 on the material for transformation of wave length 55 among the embodiment as shown in Figure 4.
Yet in this embodiment, red LED 53a and 53b are that the center is symmetrical arranged with blue LED51.The number of red LED53a and 53b can be two or more.By this configuration, can provide from the uniform luminance of the ruddiness of red LED53a and 53b emission to distribute and the uniform luminance of mixed light distributes.
As Fig. 4 explanation, can form sealing resin 70 simultaneously to seal red LED53a and 53b and material for transformation of wave length 55.
Fig. 8 is the cross-sectional view according to the light-emitting device of seventh embodiment of the invention.
Referring to Fig. 8, the light-emitting device of this embodiment comprises the material for transformation of wave length 85 of the blue LED81 that is arranged on the substrate 50, the blue LED81 of sealing and the speculum 90 on the material for transformation of wave length 85 among the embodiment as shown in Figure 4.In addition, light-emitting device comprises the red LED53 that separates with material for transformation of wave length 85 and through forming the sealing resin 70 with sealing material for transformation of wave length 85 and red LED53.
In this embodiment, material for transformation of wave length 85 is through forming the material layer with the blue LED81 of even sealing.For the blue LED81 that is arranged on the substrate 50, can form material for transformation of wave length 85 in the above by stencil finishing (stenciling) or similar approach.Perhaps, for the blue LED81 that is attached on the subbase seat (not shown), can form material for transformation of wave length 85 in the above by electrophoresis process.The 6th, 642, No. 652 and the 6th, 650, disclosed the method that forms phosphor layer based on stencil finishing or electrophoresis process in No. 044 United States Patent (USP) with uniform thickness.Can on the material for transformation of wave length layer, evenly form speculum 90 by stencil finishing and similar approach.
Perhaps, in the process of making blue LED81, can be by form material for transformation of wave length layer 85 to get off: growth compound semiconductor layer on substrate, form a plurality of blue LED by photoetching and etching, and then (for example apply the transparent organic liquid that contains phosphor or gel on the substrate of described a plurality of blue LED comprising, spin-coating glass (spin-on-glass, SOG)).Form after the material for transformation of wave length layer on substrate, described a plurality of blue LED individually are divided into each LED81, each has the uniform material for transformation of wave length layer 85 of thickness described LED81.Here, speculum 90 can be formed on the material for transformation of wave length layer 85 before described a plurality of blue LED are divided into each LED81, or can the process by for example stencil finishing or similar approach be formed on the material for transformation of wave length layer 85 after described a plurality of blue LED are divided into each LED81.Speculum 90 comprises at least one pair of dielectric layer 91 and 93, and wherein dielectric layer 91 has high index and dielectric layer 93 has than low-refraction.
According to this embodiment, has uniform thickness owing to contain the material for transformation of wave length layer 85 of phosphor, therefore the light from blue LED81 is transmitted into the outside by the even optical path in the material for transformation of wave length layer 85, makes the light that produces via wavelength Conversion can represent uniform Wavelength distribution.
In the above-described embodiments, blue LED51 and 81 has been described as by material for transformation of wave length 55 and 88 sealings.Yet, the invention is not restricted to this configuration, can adopt the light-emitting diode of the light (for example, ultraviolet rays) that is used to launch first wavelength to substitute blue LED.In the case, material for transformation of wave length contains the phosphor that ultraviolet rays can be converted to visible light (for example, blue light and/or gold-tinted).
In an embodiment, can adopt other light-emitting diode that can launch than the light of long second wavelength of first ripple, for example green LED substitutes red LED53,53a and 53b.
Simultaneously, in an embodiment, LED51,81 and 83 is electrically connected to lead-in wire electrode (not shown).For this purpose, can use subbase seat (not shown) or joint line (not shown), and LED can be attached to the lead-in wire electrode via electroconductive binder.Although LED51,81 and 83 can be electrically connected to identical lead-in wire electrode and by identical power drives, the invention is not restricted to this configuration.But LED can be electrically connected to independent lead-in wire electrode and separately by different power drives.
Apparent by above describing, the present invention can provide a kind of and comprise a plurality of material for transformation of wave length layers to realize the light-emitting device of mixed light, wherein contain to be useful on and make light be arranged on to contain to be useful on light is carried out to long relatively wavelength on another material for transformation of wave length layer of phosphor of wavelength Conversion, thereby can prevent to lose by phosphor via the light that wavelength Conversion produces to the material for transformation of wave length layer that short relatively wavelength carries out the phosphor of wavelength Conversion.In addition, the transparent mould workpieces is arranged between material for transformation of wave length layer and the light-emitting diode, loses owing to reentering light-emitting diode with the light that prevents to produce via the wavelength Conversion of phosphor.And the present invention can provide a kind of light-emitting device, and it further comprises the dielectric multilayer speculum, with the light that prevents to produce via wavelength Conversion owing to reentering phosphor or light-emitting diode is lost.In addition, the present invention can provide a kind of light-emitting device, it further comprises the dielectric multilayer speculum, lose by phosphor from the light of second light-emitting diode emission of the light that is used to launch longer wavelength preventing, or prevent to lose owing to reentering material for transformation of wave length from the light of first light-emitting diode emission of the light that is used to launch shorter wavelength.
Although describe one exemplary embodiment referring to accompanying drawing, but should note the invention is not restricted to described embodiment and graphic, and the those skilled in the art can make various modifications and change under the situation that does not break away from the spirit and scope of the invention that is defined by appended claims.
Claims (17)
1. light-emitting device is characterized in that it comprises:
Light-emitting diode, it is arranged on the substrate to launch the light of first wavelength;
The transparent mould workpieces, it seals described light-emitting diode;
Bottom material for transformation of wave length layer, it is arranged on the described transparent mould workpieces, and contains and be useful on the phosphor that will convert to from the light of described first wavelength of described light-emitting diode emission than the light of long second wavelength of described first ripple; And
Top material for transformation of wave length layer, it is arranged on the material for transformation of wave length layer of described bottom, and contain and be useful on the phosphor that will convert to from the light of described first wavelength of described light-emitting diode emission than the light of the long three-wavelength of described first ripple, described three-wavelength is shorter than described second wavelength.
2. light-emitting device according to claim 1 is characterized in that the refractive index that wherein said transparent mould workpieces, described bottom material for transformation of wave length layer and described top material for transformation of wave length layer have to be increased by this order.
3. light-emitting device according to claim 1 is characterized in that wherein said bottom material for transformation of wave length layer comprises at least one opening, and described transparent mould workpieces exposes by described opening, and described opening is filled with described top material for transformation of wave length layer.
4. light-emitting device according to claim 1, the light that it is characterized in that wherein said first wavelength is blue light, the light of described second wavelength is ruddiness, and the light of described three-wavelength is green glow.
5. light-emitting device according to claim 1 is characterized in that wherein said transparent mould workpieces and described top material for transformation of wave length layer and bottom material for transformation of wave length layer are to use mould to form.
6. light-emitting device according to claim 5 is characterized in that wherein said transparent mould workpieces is formed by silicones, and described top material for transformation of wave length layer and bottom material for transformation of wave length layer are formed by epoxy resin.
7. light-emitting device according to claim 1 is characterized in that it further comprises:
The lower dielectric multilayer mirror, it is inserted between described transparent mould workpieces and the described bottom material for transformation of wave length layer; And
The upper dielectric multilayer mirror, it is inserted between described bottom material for transformation of wave length layer and the described top material for transformation of wave length layer.
8. light-emitting device according to claim 7 is characterized in that in the dielectric layer in the wherein said lower dielectric multilayer mirror each has satisfied (2m-1) λ
2/ 4n
2(n wherein
2Indicate each refractive index of described dielectric layer, λ
2Indicate described second wavelength, and m indication is more than or equal to 1 integer) thickness of relation; And
In the dielectric layer in the wherein said upper dielectric multilayer mirror each has satisfied (2k-1) λ
3/ 4n
3(n wherein
3Indicate each refractive index of described dielectric layer, λ
3Indicate described three-wavelength, and k indication is more than or equal to 1 integer) thickness of relation.
9. light-emitting device according to claim 7, wherein said bottom material for transformation of wave length layer comprises at least one opening, and described transparent mould workpieces exposes by described opening, and described opening is filled with described top material for transformation of wave length layer.
10. light-emitting device according to claim 9 is characterized in that wherein said upper dielectric multilayer mirror extends in the described opening, to be inserted between the described transparent mould workpieces and described top material for transformation of wave length layer in the described opening.
11. a light-emitting device is characterized in that it comprises:
First light-emitting diode, it is arranged on the substrate to launch the light of first wavelength;
Material for transformation of wave length, it seals described first light-emitting diode, and contains and be useful on carry out the phosphor of wavelength Conversion from the part of the light of described first wavelength of described first light-emitting diode emission;
Second light-emitting diode, it separates with described first light-emitting diode, and is arranged on the described substrate with the light of emission than long second wavelength of described first ripple;
The dielectric multilayer speculum, it is formed on the described material for transformation of wave length and comprises at least one pair of dielectric layer, one of them dielectric layer has high index and another dielectric layer has than low-refraction, is incident on the light of described second wavelength on the described material for transformation of wave length with reflection.
12. light-emitting device according to claim 11, it is characterized in that in the wherein said dielectric layer each has satisfies d=(2m-1) λ/4n (wherein n indicates each refractive index of described dielectric layer, λ indicates described second wavelength, and m indication is more than or equal to 1 integer) thickness " d " of relation.
13. light-emitting device according to claim 11, it further comprises:
Sealing resin, it seals described material for transformation of wave length and described second light-emitting diode, and described sealing resin has than the low refractive index of described dielectric layer with described high index.
14. light-emitting device according to claim 11 is characterized in that it further comprises:
Another second light-emitting diode, it is that center and described second light-emitting diode are symmetrical arranged with described first light-emitting diode.
15. light-emitting device according to claim 11 is characterized in that wherein said dielectric multilayer mirror portion is formed on the described material for transformation of wave length.
16. light-emitting device according to claim 11 is characterized in that wherein said material for transformation of wave length is the material layer that is formed on the described light-emitting diode and has uniform thickness.
17. light-emitting device according to claim 11 is characterized in that the emission of wherein said first light-emitting diode has 490nm or the more blue light or the ultraviolet rays of small leak wavelength; And
Wherein said second light-emitting diode emission has the ruddiness of 580nm or bigger peak wavelength.
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|---|---|---|---|
| KR1020060133993 | 2006-12-26 | ||
| KR1020060133993A KR101297405B1 (en) | 2006-12-26 | 2006-12-26 | Light emitting device employing dielectric multilayer reflecting mirror |
| KR1020060136442 | 2006-12-28 |
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| Publication Number | Publication Date |
|---|---|
| CN101212015A true CN101212015A (en) | 2008-07-02 |
| CN100533795C CN100533795C (en) | 2009-08-26 |
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| CNB2007103013944A Active CN100533795C (en) | 2006-12-26 | 2007-12-25 | Light emitting device |
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| CN (1) | CN100533795C (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN100533795C (en) | 2009-08-26 |
| KR20080059989A (en) | 2008-07-01 |
| KR101297405B1 (en) | 2013-08-19 |
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