CN101212008A - Electroluminescent device and method for production thereof - Google Patents
Electroluminescent device and method for production thereof Download PDFInfo
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- CN101212008A CN101212008A CNA2006101717657A CN200610171765A CN101212008A CN 101212008 A CN101212008 A CN 101212008A CN A2006101717657 A CNA2006101717657 A CN A2006101717657A CN 200610171765 A CN200610171765 A CN 200610171765A CN 101212008 A CN101212008 A CN 101212008A
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Abstract
The invention relates to an electroluminescence device, which comprises a heat conducting base plate, a heat conducting bond layer, a heat conducting insulation layer, a reflecting layer, a luminescent diode element, a first contact electrode and a second contact electrode. The heat conducting bond layer is arranged on the heat conducting base plate; the heat conducting insulation layer is arranged on the heat conducting bond layer; the reflecting layer is arranged on the heat conducting insulation layer; the luminescent diode element is arranged on the reflecting layer and part of the reflecting layer is exposed. The first contact electrode is arranged on the luminescent diode element, while the second contact electrode is positioned on the exposed part of the reflecting layer. The invention also discloses a method for manufacturing the electroluminescence device.
Description
Technical field
The present invention relates to a kind of light-emitting device and manufacture method thereof, particularly relate to a kind of el light emitting device and manufacture method thereof.
Background technology
In recent years, because electroluminescence (electroluminescenece) development of technology, also brought up for example light-emitting diode (light emitting diode, LED) material and technology technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even the traffic signals or the automobile-used indicator light of liquid crystal indicator, even also has an opportunity as illumination light source in the future.Yet along with the luminous power of light-emitting diode constantly improves, the heat energy that it produced is also soaring thereupon, if can't effectively handle, will reduce the luminous efficiency of light-emitting diode for the heat energy of light-emitting diode.
Existing a kind of light-emitting diode utilizes secondary to attach program and forms, and its step comprises: epitaxial loayer is grown up in temporary substrate; The epitaxial loayer commentaries on classics is affixed on glass substrate, and removes temporary substrate; The coating specular layer is on epitaxial loayer; And epitaxial loayer is pasted on permanent substrate, and remove glass substrate.
From the above, please refer to shown in Figure 1A,, comprise permanent substrate 11, organic adhesion coating 12, specular layer 13 and epitaxial loayer 14 on the structure according to the formed light-emitting diode 1 of above-mentioned steps.
Epitaxial loayer 14 has p type doping 141, luminescent layer 142 and n type and mixes 143.In addition, be provided with p type electrode 151 in p type doping 141, and be provided with n type electrode 152 in n type doping 143.The material of organic adhesion coating 12 is generally PR, epoxy resin (Epoxy), polyimides quartz (Polyimide-Quartz), FR-4 type epoxy resin, Teflon (Teflon), polyimides (polyimide), benzocyclobutene (BCB) or fluorine cyclobutane (PFCB), and its conductive coefficient is usually between 0.1 (W/mk)～0.3 (W/mk), so it has quite high degree of difficulty for heat energy processing of light-emitting diode 1.In addition, when permanent substrate 11 is metal,, therefore cause short circuit between the two easily owing to there is no insulation protection between permanent substrate 11 and the epitaxial loayer 14.
In addition, please refer to shown in Figure 1B, existing another kind of light-emitting diode 2 has metallic reflector 22 successively, is total to golden adhesion coating 23, transparency conducting layer 24 and epitaxial loayer 25 on permanent substrate 21.Epitaxial loayer 25 has p type doping 251, luminescent layer 252 and n type successively and mixes 253, wherein n type doping 253 contacts with the transparency conducting layer 24 of part, and the transparency conducting layer 24 in another part is provided with n type electrode 261, and is provided with p type electrode 262 in p type doping 251.
Altogether golden adhesion coating 23 is formed by two metal levels, 231,232 modes with heat pressing process, with strengthen respectively and transparency conducting layer 24 and metallic reflector 22 between the bond ability.Yet altogether the required temperature of gold process is usually above 300-400 ℃, the so also influences that will produce to a certain degree epitaxial loayer 25, and reduce its luminous efficiency.
Therefore, how to provide a kind of and can have good heat dissipation path, reduce its temperature simultaneously to get rid of the heat energy that el light emitting device was produced, and then improve the el light emitting device and the manufacture method thereof of luminous efficiency, real one of the current important topic that belongs to.
Summary of the invention
Therefore, for addressing the above problem, the present invention proposes a kind of good heat radiating path that has, to improve the el light emitting device and the manufacture method thereof of luminous efficiency.
According to purpose of the present invention, propose a kind of el light emitting device and comprise heat conduction tack coat, heat-conducting substrate, reflector, light-emitting diode, first contact electrode and second contact electrode.Heat-conducting substrate is arranged at a side of heat conduction tack coat; The reflector is arranged at the opposite side of heat conduction tack coat; Light-emitting diode is arranged on the reflector, and exposes the reflector of part, and wherein light-emitting diode has first semiconductor layer, luminescent layer and second semiconductor layer successively, and second semiconductor layer contacts with the reflector; First contact electrode is electrically connected with first semiconductor layer; Second contact electrode is positioned at the expose portion in reflector, and is electrically connected with the reflector.
Above-mentioned el light emitting device, when the material of heat-conducting substrate is electric conducting material, also can comprise the heat conductive insulating layer, it can be arranged between reflector and the heat conduction tack coat, or be arranged between heat conduction tack coat and the heat-conducting substrate, lost efficacy to avoid light-emitting diode and heat-conducting substrate short circuit.
According to another object of the present invention, a kind of manufacture method of el light emitting device is proposed, comprise the following steps: to form light-emitting diode on plate body, wherein light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer successively, and first semiconductor layer is formed on the plate body; Form the reflector on light-emitting diode; The heat conduction tack coat is arranged on the reflector; Heat-conducting substrate is arranged on the heat conduction tack coat; And remove plate body.
The manufacture method of above-mentioned el light emitting device also can comprise and the heat conductive insulating layer is set between reflector and heat conduction tack coat, or the heat conductive insulating layer is arranged between heat conduction tack coat and the heat-conducting substrate, lost efficacy to avoid light-emitting diode and heat-conducting substrate short circuit.
In addition, above-mentioned el light emitting device and manufacture method thereof, wherein the material of heat-conducting substrate can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.The material of heat conduction tack coat can be tin cream, tin silver paste, silver paste, or the joint scolder formed of other alloys.The material of heat conductive insulating layer can be aluminium nitride or carborundum.
From the above, according to a kind of el light emitting device of the present invention and manufacture method thereof, utilization has heat conduction tack coat, heat-conducting substrate or even the heat conductive insulating layer of high thermal conductivity coefficient, so that the heat energy that light-emitting diode was produced is effectively conducted to the external world, to improve the luminous efficiency of el light emitting device.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and in conjunction with the accompanying drawings, be described in detail below:
Description of drawings
Figure 1A is for showing the schematic diagram of existing a kind of light-emitting diode;
Figure 1B is for showing the schematic diagram of existing another kind of light-emitting diode;
Fig. 2 is the flow chart of demonstration according to the manufacture method of the el light emitting device of first embodiment of the invention;
Fig. 3 A to 3I is each schematic diagram according to the el light emitting device of the flow chart step of Fig. 2;
Fig. 4 is the flow chart of demonstration according to the manufacture method of the el light emitting device of second embodiment of the invention; And
Fig. 5 A to 5I is each schematic diagram according to the el light emitting device of the flow chart step of Fig. 4.
The simple symbol explanation
1,2: light-emitting diode
11,21: permanent substrate
12: organic adhesion coating
13: specular layer
14,25: epitaxial loayer
141,251:p type doped layer
142,252: luminescent layer
143,253:n type doped layer
151,261:p type electrode
152,262:n type electrode
22: metallic reflector
23: be total to golden adhesion coating
231,232: metal level
24: transparency conducting layer
3,4: el light emitting device
31,41: plate body
32,42: light-emitting diode
321,421: the first semiconductor layers
322,422: luminescent layer
323,423: the second semiconductor layers
33,43: the reflector
34,45: the heat conductive insulating layer
35,44: the heat conduction tack coat
36,46: heat-conducting substrate
37,47: contact electrode
371,471: the first contact electrodes
372,472: the second contact electrodes
S01～S09, S11～S19: process step
Embodiment
Hereinafter with reference to relevant drawings, the embodiment according to el light emitting device of the present invention and manufacture method thereof is described.
At first be noted that and followingly will a kind of el light emitting device of the present invention and manufacture method thereof be described respectively with first embodiment and second embodiment.In addition, in the present embodiment, el light emitting device is to be example with the light-emitting diode.
Please refer to shown in Figure 2ly, the manufacture method of the el light emitting device of first embodiment of the invention comprises that step S01 is to step S09.Please be simultaneously with reference to shown in Fig. 3 A to Fig. 3 I, Fig. 3 A to 3I is each schematic diagram according to the el light emitting device of the flow chart step of Fig. 2.Below describe the el light emitting device 3 and the manufacture method thereof of first embodiment of the invention in detail.
As shown in Figure 3A, step S01 forms light-emitting diode 32 on plate body 31.Wherein plate body 31 can be the extension plate body, and it needs before using earlier through acetone and ethanol clean surface, again with the pure water cleaning, afterwards again with nitrogen (N
2) dry up.In addition, light-emitting diode 32 comprises first semiconductor layer 321, luminescent layer 322 and second semiconductor layer 323 successively, and wherein first semiconductor layer 321 is formed on the plate body 31.In the present embodiment, first semiconductor layer 321 is a n type doped layer, and second semiconductor layer 323 is a p type doped layer.
Shown in Fig. 3 B, step S02 forms reflector 33 on light-emitting diode 32.Specifically, reflector 33 is formed on second semiconductor layer 323 of light-emitting diode 32.In the present embodiment, reflector 33 can be the metal ohmic contact reflector, and it because it has the characteristic of low resistance, can make CURRENT DISTRIBUTION comparatively even except that can be used to reflect the light that light-emitting diode 32 sent.In addition, the material in reflector 33 can be selected from the group that platinum (Pt), gold (Au), silver (Ag), palladium (Pd), nickel (Ni), chromium (Cr), titanium (Ti) and combination thereof are constituted.
Shown in Fig. 3 C, step S03 forms heat conductive insulating layer 34 on reflector 33.In the present embodiment, heat conductive insulating layer 34 can the reactive sputtering method, non-reacted sputtering method, high-temperature ammonolysis method be formed on the reflector 33.In addition, the material of heat conductive insulating layer 34 can be aluminium nitride (AlN) or carborundum (SiC), and wherein the conductive coefficient of aluminium nitride is about 200～230 (W/mk), and the conductive coefficient of carborundum is about 300～490 (W/mk).
Shown in Fig. 3 D, step S04 is arranged at heat conduction tack coat 35 on the heat conductive insulating layer 34, and promptly heat conduction tack coat 35 can not contact with reflector 33.Perhaps heat conduction tack coat 35 can directly contact with reflector 33, and does not need heat conductive insulating layer 34.At this, because heat conductive insulating layer 34 has been formed on the reflector 33, so heat conduction tack coat 35 is formed on the heat conductive insulating layer 34 with screen painting, spin coating or the mode of putting glue.Wherein, the material of heat conduction tack coat 35 is tin cream, tin silver paste, silver paste, or the joint scolder formed of other alloys.
Shown in Fig. 3 E, step S05 is arranged at heat-conducting substrate 36 on the heat conduction tack coat 35, promptly heat-conducting substrate 36 can contact with heat conduction tack coat 35 or not with thermal contact conductance tack coat 35.At this, owing to heat conduction tack coat 35 is formed on the heat conductive insulating layer 34, so heat-conducting substrate 36 direct and heat conduction tack coat 35 stickups.Wherein, the material of heat-conducting substrate 36 can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
Be noted that, after heat conduction tack coat 35 also can screen painting, the mode of spin coating or some glue is formed on the heat-conducting substrate 36, paste with heat conductive insulating layer 34 again, do not limit its process sequence at this.
Shown in Fig. 3 F, the formed el light emitting device 3 of step S06 upset above-mentioned steps.Shown in Fig. 3 G, step S07 removes plate body 31 for another example, and it can divest (Laser lift-off) technology to remove plate body 31 by laser.
Shown in Fig. 3 H, step S08 removes the light-emitting diode 32 of part with the reflector 33 of expose portion, and in the present embodiment, the light-emitting diode 32 that removes part in the mode of etching (Etching) is an example.Specifically, the step of light-emitting diode 32 that removes part comprises: form the photoresist layer on second semiconductor layer 323; Will be for example shine photic resist layer by mask for the light of ultraviolet light (UV); Remove the photoresist layer of part, to form patterning photoresist layer; Remove second semiconductor layer 323 of part, the luminescent layer 322 of part and first semiconductor layer 321 of part; And remove patterning photoresist layer, with the reflector 33 of expose portion.What deserves to be mentioned is that the photoresist layer can be the photoresist layer with positive photoresist coefficient or is the photoresist layer with negative photoresist coefficient.Its difference is via after the irradiate light, partly be removed by light-struck photoresist or not partly be removed by light-struck photoresist, yet it is ripe etching technique, is no longer given unnecessary details at this.
Last then be the step that forms contact electrode 37, shown in Fig. 3 I, step S09 forms first contact electrode 371 on first semiconductor layer 321 of part, and forms second contact electrode 372 on the expose portion in reflector 33, to form el light emitting device 3.
In the present embodiment, above-mentioned technology all can be finished between 25 ℃ to 300 ℃ of technological temperatures, so it belongs to low temperature process, is difficult for influencing the rate of finished products of light-emitting diode 32.In addition, what deserves to be mentioned is, when the material of heat-conducting substrate 36 is insulating material, then heat conductive insulating layer 34 need be set, therefore above-mentioned formation step about heat conductive insulating layer 34 can be omitted.
Below, please refer to shown in Figure 4ly, the el light emitting device 4 of second embodiment of the invention and manufacture method thereof comprise that step S11 is to step S19.Please be simultaneously with reference to shown in Fig. 5 A to Fig. 5 I, Fig. 5 A to 5I is each schematic diagram according to the el light emitting device of the flow chart step of Fig. 4.Below describe the el light emitting device 4 and the manufacture method thereof of second embodiment of the invention in detail.
Please refer to shown in Fig. 5 A and Fig. 5 B, step S11 is identical with step S01 and the step S02 of the step S12 and first embodiment, so do not repeat them here.Be that step S11 forms light-emitting diode 42 on plate body 41, and light-emitting diode 42 comprises first semiconductor layer 421, luminescent layer 422 and second semiconductor layer 423 successively, wherein first semiconductor layer 421 is formed on the plate body 41.Step S12 forms reflector 43 on light-emitting diode 42.
Then, shown in Fig. 5 C, step S13 is arranged at heat conduction tack coat 44 on the reflector 43, and promptly heat conduction tack coat 44 can contact with reflector 43 or not contact with reflector 33.At this, heat conduction tack coat 44 is formed on the reflector 43 in the mode of screen painting, spin coating or some glue.Wherein, the material of heat conduction tack coat 44 is tin cream, tin silver paste, silver paste, or the joint scolder formed of other alloys.
Shown in Fig. 5 D, step S14 forms heat conductive insulating layer 45 on heat-conducting substrate 46.In the present embodiment, heat conductive insulating layer 45 can the reactive sputtering method, non-reacted sputtering method, high-temperature ammonolysis method be formed on the heat-conducting substrate 46.In addition, the material of heat conductive insulating layer 45 can be aluminium nitride (AlN) or carborundum (SiC), and wherein the conductive coefficient of aluminium nitride is about 200～230 (W/mk), and the conductive coefficient of carborundum is about 300～490 (W/mk).In addition, the material of heat-conducting substrate 46 can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
Shown in Fig. 5 E, step S15 contacts heat conductive insulating layer 45 with heat conduction tack coat 44, so that heat-conducting substrate 46 and heat conductive insulating layer 45 are pasted on the reflector 43.
Be noted that, after heat conduction tack coat 44 also can screen painting, the mode of spin coating or some glue is formed on the heat conductive insulating layer 45, paste with reflector 43 again, do not limit its process sequence at this.
Shown in Fig. 5 F to Fig. 5 I, step S16 is identical to step S09 with the step S06 of first embodiment to step S19, so no longer given unnecessary details at this.It is the formed el light emitting device 4 of step S16 upset above-mentioned steps; Step S17 removes plate body 41; Step S18 removes the reflector 43 of the light-emitting diode 42 of part with expose portion; Form the step of contact electrode 47 at last, step S19 forms first contact electrode 471 on first semiconductor layer 421 of part, and forms second contact electrode 472, and it is positioned on the expose portion in reflector 43, to form el light emitting device 4.
In the present embodiment, the above-mentioned step that removes the light-emitting diode 42 of part comprises: form the photoresist layer on second semiconductor layer 423; Light is shone photic resist layer by mask; Remove the photoresist layer of part, to form patterning photoresist layer; Remove second semiconductor layer 423 of part, the luminescent layer 422 of part and first semiconductor layer 421 of part; And remove patterning photoresist layer, with the reflector 43 of expose portion.
In sum, according to a kind of el light emitting device of the present invention and manufacture method thereof, utilization has heat conduction tack coat, heat-conducting substrate or even the heat conductive insulating layer of high thermal conductivity coefficient, so that the heat energy that light-emitting diode was produced is effectively conducted to the external world, to improve the luminous efficiency of el light emitting device.In addition, be technology maturation, method with low cost because the mode of screen painting, spin coating or some glue forms the heat conduction tack coat, can reduce production costs and can improve rate of finished products.Moreover, at heat-conducting substrate and light-emitting diode the heat conductive insulating layer is set, its short circuit between the two can be effectively prevented, and heat dissipation can be increased.At last, utilize the metallic reflector that possesses the ohmic contact function to reflect the light that light-emitting diode produces, can improve the outside of el light emitting device and get optical efficiency.
The above only is an illustrative, and nonrestrictive.Anyly do not break away from spirit of the present invention and scope, and, all should be contained among the claim its equivalent modifications of carrying out or change.
Claims (20)
1. the manufacture method of an el light emitting device comprises the following steps:
Form light-emitting diode on plate body, this light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer successively, and this first semiconductor layer is formed on this plate body;
Form the reflector on this light-emitting diode;
The heat conduction tack coat is arranged on this reflector;
Heat-conducting substrate is arranged on this heat conduction tack coat; And
Remove this plate body.
2. manufacture method as claimed in claim 1, wherein this first semiconductor layer is a n type doped layer, this second semiconductor layer is a p type doped layer.
3. manufacture method as claimed in claim 1 also comprises:
Form the heat conductive insulating layer on this reflector or this heat-conducting substrate.
4. manufacture method as claimed in claim 3, wherein this heat conduction tack coat is formed on this heat conductive insulating layer and with this heat-conducting substrate in the mode of screen painting, spin coating or some glue and pastes, or be formed on this heat-conducting substrate and paste with this heat conductive insulating layer, or be formed on this heat conductive insulating layer and paste, or be formed on this reflector and and paste with this heat conductive insulating layer with this reflector.
5. manufacture method as claimed in claim 3, wherein the material of this heat conductive insulating layer is aluminium nitride or carborundum.
6. manufacture method as claimed in claim 3, wherein this heat conductive insulating layer is formed on this reflector with reactive sputtering method, non-reacted sputtering method, high-temperature ammonolysis method.
7. manufacture method as claimed in claim 1, wherein the material of this heat conduction tack coat is tin cream, tin silver paste, silver paste, or the joint scolder formed of other alloys.
8. manufacture method as claimed in claim 1, the step that wherein removes this plate body is for to remove this plate body with the laser divesting technology.
9. manufacture method as claimed in claim 1 wherein after removing this plate body, also comprises step:
Remove this light-emitting diode of part, with this reflector of expose portion.
10. as manufacture method as described in the claim 9, the step that wherein removes this light-emitting diode of part comprises:
On this second semiconductor layer, form the photoresist layer;
Light is shone this photoresist layer by mask;
Remove this photoresist layer of part, to form patterning photoresist layer;
Remove this second semiconductor layer of part, this luminescent layer of part and this first semiconductor layer of part; And
Remove this patterning photoresist layer.
11. manufacture method as claimed in claim 9 wherein after removing this light-emitting diode of part, also comprises step:
Form first contact electrode in this first semiconductor layer.
12. manufacture method as claimed in claim 9 wherein after removing this light-emitting diode of part, also comprises step:
Form second contact electrode, and this second contact electrode is positioned at the expose portion in this reflector.
13. manufacture method as claimed in claim 1, wherein this reflector is the metal ohmic contact reflector, and the material in this reflector is selected from platinum, gold, silver, palladium, nickel, chromium, titanium and group that combination constituted thereof.
14. manufacture method as claimed in claim 1, its technological temperature is between 25 ℃ to 300 ℃.
15. an el light emitting device comprises:
The heat conduction tack coat;
Heat-conducting substrate is arranged at a side of this heat conduction tack coat;
The reflector is arranged at the opposite side of this heat conduction tack coat;
Light-emitting diode is arranged on this reflector, and this reflector of expose portion, and this light-emitting diode has first semiconductor layer, luminescent layer and second semiconductor layer successively, and this second semiconductor layer contacts with this reflector;
First contact electrode is electrically connected with this first semiconductor layer; And
Second contact electrode, it is positioned at the expose portion in this reflector, and this second contact electrode is electrically connected with this reflector.
16. el light emitting device as claimed in claim 15 also comprises:
The heat conductive insulating layer be arranged between this heat-conducting substrate and this heat conduction tack coat, or this heat conductive insulating layer is arranged between this heat conduction tack coat and this reflector.
17. el light emitting device as claimed in claim 16, wherein the material of this heat conductive insulating layer is selected from aluminium nitride or carborundum.
18. el light emitting device as claimed in claim 15, wherein the material of this heat conduction tack coat is tin cream, tin silver paste, silver paste, or the joint scolder formed of other alloys.
19. el light emitting device as claimed in claim 15, wherein this reflector is the metal ohmic contact reflector, and the material in this reflector is selected from platinum, gold, silver, palladium, nickel, chromium, titanium and group that combination constituted thereof.
20. el light emitting device as claimed in claim 15, wherein the material of this heat-conducting substrate is selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101717657A CN101212008A (en) | 2006-12-29 | 2006-12-29 | Electroluminescent device and method for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101717657A CN101212008A (en) | 2006-12-29 | 2006-12-29 | Electroluminescent device and method for production thereof |
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| Publication Number | Publication Date |
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| CN101212008A true CN101212008A (en) | 2008-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006101717657A Pending CN101212008A (en) | 2006-12-29 | 2006-12-29 | Electroluminescent device and method for production thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386178A (en) * | 2011-12-08 | 2012-03-21 | 晶科电子（广州）有限公司 | High-voltage-driving LED light-emitting device and manufacturing method thereof |
| CN102412349A (en) * | 2010-09-17 | 2012-04-11 | 柏光照明股份有限公司 | Semiconductor light-emitting component and fabrication method thereof |
| CN104810435A (en) * | 2009-06-10 | 2015-07-29 | 株式会社东芝 | Thin-film LED with P and N contacts electrically isolated from the substrate |
| CN105762266A (en) * | 2016-04-27 | 2016-07-13 | 安徽三安光电有限公司 | Light-emitting diode having heat conducting layer and preparation method thereof |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| WO2020077992A1 (en) * | 2018-10-16 | 2020-04-23 | 深圳光峰科技股份有限公司 | Light-emitting device and manufacturing method therefor |
-
2006
- 2006-12-29 CN CNA2006101717657A patent/CN101212008A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810435A (en) * | 2009-06-10 | 2015-07-29 | 株式会社东芝 | Thin-film LED with P and N contacts electrically isolated from the substrate |
| CN102412349A (en) * | 2010-09-17 | 2012-04-11 | 柏光照明股份有限公司 | Semiconductor light-emitting component and fabrication method thereof |
| CN102386178A (en) * | 2011-12-08 | 2012-03-21 | 晶科电子（广州）有限公司 | High-voltage-driving LED light-emitting device and manufacturing method thereof |
| CN102386178B (en) * | 2011-12-08 | 2015-12-02 | 晶科电子（广州）有限公司 | A kind of LED of high drive and manufacture method thereof |
| CN105762266A (en) * | 2016-04-27 | 2016-07-13 | 安徽三安光电有限公司 | Light-emitting diode having heat conducting layer and preparation method thereof |
| CN105762266B (en) * | 2016-04-27 | 2018-11-27 | 安徽三安光电有限公司 | A kind of light emitting diode and preparation method thereof with heat-conducting layer |
| WO2020077992A1 (en) * | 2018-10-16 | 2020-04-23 | 深圳光峰科技股份有限公司 | Light-emitting device and manufacturing method therefor |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN110071210B (en) * | 2019-04-15 | 2020-10-23 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
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Open date: 20080702 |