CN101210340A - Electrochemical etching liquid and etching method - Google Patents
Electrochemical etching liquid and etching method Download PDFInfo
- Publication number
- CN101210340A CN101210340A CNA2006101726139A CN200610172613A CN101210340A CN 101210340 A CN101210340 A CN 101210340A CN A2006101726139 A CNA2006101726139 A CN A2006101726139A CN 200610172613 A CN200610172613 A CN 200610172613A CN 101210340 A CN101210340 A CN 101210340A
- Authority
- CN
- China
- Prior art keywords
- etching
- etching solution
- weight
- content
- sodium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
An electrochemical etching solution is an aqueous solution containing sulfuric acid and phosphoric acid, wherein the etching solution also contains a surfactant. The electrochemical etching solution and the etching method provided by the invention can greatly increase the etching speed and reduce the occurrence of side etching phenomenon.
Description
Technical field
The invention relates to a kind of etching solution and engraving method, especially about a kind of chemical etching liquid and engraving method.
Background technology
Etched principle is to utilize chemical solution that the corrosion of metal effect is dissolved unwanted metal fast to remove.Etched primary process is after required picture is produced into egative film; expose through uviolizing at lighthouse; pattern is imprinted in the silk screen that scribbles sensitive materials; with silk screen method pattern is imprinted on the metallic surface again; carry out selective corrosion with etching solution; after striping, anodic oxidation, cleaning, drying, promptly get surperficial metallic substance again with picture and text, according to required can also be further at the metallic surface coating protective film.This etching method is widely used in the processing of metallic surface in production and the decoration trade.For example, can be used for the making of mobile phone faceplate, the making of billboard and the making of texturing aluminium sheet etc.
At present, existing etching solution mainly is the chemical etching liquor at metal superfines such as stainless steel, copper, nickel processing, and it is fewer to be used for the chemical etching liquor of aluminium and aluminium alloy.Used the aqueous solution of forming by phosphoric acid and nitric acid as etching solution, but this etching solution etching speed is slow in the past, and can forms obnoxious flavoures such as " tobacco " in the etching.
CN 1058999A discloses a kind of method for chemially etching of surface of aluminum plate, and this method has selected for use the hydrofluoric acid of 0.2-0.6% to carry out etching as etching solution.But employed hydrofluoric acid is bigger to the influence of environment in this method, and damages operator's health easily.
Disclose a kind of chemical etching liquor that is used for aluminium and aluminium alloy among the CN 1743507A, it is characterized in that, this etching solution is made up of hydrochloric acid, sulfuric acid, phosphoric acid and water.There is not the harm to environment and operator in this method, but, the etching speed of this method is still slower, when industrialized mass, efficient is lower, and when carrying out etching with this etching solution, side etching phenomenon is less when carrying out etching for the less aluminium sheet of thickness, but along with the increase of aluminium plate thickness, side etching phenomenon is also corresponding to become serious.Therefore, the bigger aluminium of thickness is dealt with comparison difficulty, poor effect.
Summary of the invention
The objective of the invention is side etching phenomenon important disadvantages in order to overcome existing chemical etching liquid corrosion and to carve the aluminium that speed is slow, etched thickness is bigger, the chemical etching that a kind of etching speed is fast, side etching phenomenon is little liquid is provided.
Another object of the present invention provides the electrochemical etching method of a kind of aluminium and aluminium alloy.
The present inventor finds after deliberation, by in phosphoric acid and vitriolic mixed aqueous solution, adding an amount of tensio-active agent, obtain etching solution, with this etching solution as electrolytic solution, carry out chemical etching, can make etching speed obviously accelerate, side etching phenomenon reduces, especially for the bigger aluminium sheet of thickness.
The invention provides a kind of chemical etching liquid, this etching solution contains sulfuric acid, phosphoric acid and water, gross weight with etching solution is a benchmark, described vitriolic content is 10-50 weight %, and the content of described phosphoric acid is 30-70 weight %, and surplus is a water, wherein, this etching solution also contains anion surfactant, is benchmark with the gross weight of etching solution, and the content of described anion surfactant is weight 0.1-3 weight %.
The present invention also provides the electrochemical etching method of a kind of aluminium and aluminium alloy, and wherein, this method is an anode with the aluminum or aluminum alloy material, with the stereotype is negative electrode, described anode and negative electrode are placed etching solution, carry out electrolytically etching, described etching solution is an etching solution provided by the invention.
Chemical etching liquid provided by the invention and engraving method have been accelerated etched speed greatly, for example, when adopting etching solution of the present invention that chemical etching is carried out on the aluminum or aluminum alloy surface, etching speed reaches more than 600 microns/minute, and adopts the etching speed of the engraving method of prior art only to be 50 microns/minute.In addition, when adopting etching solution of the present invention to carry out chemical etching, side etching phenomenon is less, and for example, when adopting the engraving method of prior art to be etched to the degree of depth to be 1.8 millimeters, retaining layer is by 2 centimetres of lateral erosion to 1.58 of former width centimetre, and side etching phenomenon is serious; And adopting chemical etching liquid provided by the invention and engraving method, retaining layer all remains on more than 1.94 centimetres.Therefore, adopt etching solution provided by the invention and engraving method can obviously reduce the generation of side etching phenomenon.
Embodiment
According to the present invention, described etching solution is the aqueous solution that contains sulfuric acid and phosphoric acid, wherein, also contains tensio-active agent in this etching solution.
Described tensio-active agent can be conventional various tensio-active agents.The present invention is preferably anion surfactant.Described anion surfactant for example can be in Sodium dodecylbenzene sulfonate, Witco 1298 Soft Acid, sodium alkyl sulfate, fatty alcohol sulphuric acid, sodium lauryl sulphate, the dodecyl sulphate one or more.Described anion surfactant is Sodium dodecylbenzene sulfonate and/or Witco 1298 Soft Acid more preferably.Total amount with etching solution is a benchmark, and the content of described tensio-active agent is 0.1-5 weight %, is preferably 0.1-1 weight %.
Among the present invention, described sulfuric acid and phosphoric acid all are available commercially.Total amount with etching solution is a benchmark, and described vitriolic content can be 10-50 weight %, is preferably 10-30 weight %.Gross weight with etching solution is a benchmark, and the content of described phosphoric acid can be 30-70 weight %, is preferably 30-60 weight %.
Under the preferable case, described etching solution also contains sustained release dosage.Described sustained release dosage is water-soluble phosphate and/or water-soluble oxalate.For example, can be in sodium phosphate, potassiumphosphate, sodium oxalate, the potassium oxalate one or more.Total amount with etching solution is a benchmark, and the content of described sustained release dosage is 1-10 weight %, is preferably 3-5 weight %.Described sustained release dosage can be stablized the free state hydrogen ion concentration of etching solution, thereby balanced solution pH value makes etching more stable, reduces lateral erosion.
The preparation method of etching solution provided by the invention comprises dissolves surfactant dissolves in water, mix with sulfuric acid and phosphoric acid to get final product again.Can produce a large amount of heat because sulfuric acid contacts with water, therefore, preferably sulfuric acid slowly be joined in the aqueous solution that contains tensio-active agent.In addition, under the preferable case, also be included in and add sustained release dosage in the etching solution, described sustained release dosage preferably before adding sulfuric acid, dissolves in water earlier.
According to the present invention, the method for described chemical etching is to be anode with the aluminum or aluminum alloy material, is negative electrode with the stereotype, and described anode and negative electrode are placed etching solution, carries out electrolytically etching.Wherein, the power supply of described electrolytically etching is a direct supply, and electric current can be 5.0A/dm
2-15.0A/dm
2Described etching can be carried out at normal temperatures, but it is faster to carry out etching speed under heating, and therefore, preferred described etching solution for etching temperature is 40-70 ℃.The described etched time is according to the difference of the amount of required etch depth, etching solution temperature, etching reagent and difference got final product in general etching 1-5 minute.
Describe the present invention in detail below by embodiment.
The used aluminium sheet of the embodiment of the invention and Comparative Examples is circumference factory, and to produce thickness be 0.3 centimetre minute surface aluminium sheet, and reducing the back test is 8 centimetres with aluminium flake length, and width is 6 centimetres.
Embodiment 1
Present embodiment illustrates chemical etching liquid provided by the invention and engraving method.
0.7 gram sodium laurylsulfonate is dissolved in 20 milliliters the water, slowly adds the sulfuric acid (concentration is 98%, chemical pure) of 107 grams then, the phosphoric acid (concentration is 55%, chemical pure) of 573 grams mix, and promptly get etching solution.Vitriolic content is 15 weight % in this etching solution, and the content of phosphoric acid is 45 weight %, and the content of sodium laurylsulfonate is 0.1 weight %.
This etching solution being placed electrolyzer, make etching solution remain on 40 ℃ with the heating in water bath electrolyzer, is anode with the aluminium sheet, and stereotype is a negative electrode, and anode and negative electrode are placed etching solution, and the electric current of direct supply is set to 10A/dm
2, connect power supply then and carry out etching, observe and write down the time of aluminium sheet eating thrown, and calculate etching speed, the results are shown in Table shown in 1.
Wherein, etching speed=aluminium plate thickness/eating thrown time
Comparative Examples 1
Chemical etching liquid and engraving method that this Comparative Examples explanation prior art provides.
As Comparative Examples of the present invention, different is with the embodiment among the CN 1743507A 1, and used aluminium sheet is the used aluminium sheet of the embodiment of the invention 1.Observe and write down the time of aluminium sheet eating thrown, and calculate etching speed, the results are shown in Table shown in 1.
Embodiment 2
Present embodiment illustrates chemical etching liquid provided by the invention and engraving method.
2.1 gram dodecyl sodium sulfonates are dissolved in 38 milliliters the water, slowly add the sulfuric acid (concentration is 98%, chemical pure) of 178 grams then, the phosphoric acid (concentration is 55%, chemical pure) of 382 grams mix, and promptly get etching solution.Vitriolic content is 25 weight % in this etching solution, and the content of phosphoric acid is 30 weight %, and the content of dodecyl sodium sulfonate is 0.3 weight %.
This etching solution being placed electrolyzer, make etching solution remain on 50 ℃ with the heating in water bath electrolyzer, is anode with the aluminium sheet, and stereotype is a negative electrode, and anode and negative electrode are placed etching solution, and the electric current of direct supply is set to 12A/dm
2, connect power supply then and carry out etching, observe and write down the time of aluminium sheet eating thrown, and calculate etching speed, the results are shown in Table shown in 1.
Embodiment 3
Present embodiment illustrates chemical etching liquid provided by the invention and engraving method.
3.5 gram sodium laurylsulfonates are dissolved in 20 milliliters the water, slowly add the sulfuric acid (concentration is 98%, chemical pure) of 200 grams then, the phosphoric acid (concentration is 40%, chemical pure) of 509 grams mix, and promptly get etching solution.Vitriolic content is 20 weight % in this etching solution, and the content of phosphoric acid is 40 weight %, and the content of sodium laurylsulfonate is 0.5 weight %.
This etching solution being placed electrolyzer, make etching solution remain on 60 ℃ with the heating in water bath electrolyzer, is anode with the aluminium sheet, and stereotype is a negative electrode, and anode and negative electrode are placed etching solution, and the electric current of direct supply is set to 8A/dm
2, connect power supply then and carry out etching, observe and write down the time of aluminium sheet eating thrown, and calculate etching speed, the results are shown in Table shown in 1.
Table 1
| The embodiment numbering | Embodiment 1 | Comparative Examples 1 | Embodiment 2 | Embodiment 3 |
| The eating thrown time (minute) | 5 | 60 | 4.7 | 4.5 |
| Etching speed (micron/minute) | 600 | 50 | 638.3 | 666.7 |
As can be seen from Table 1, the etching speed of the engraving method of embodiment 1-3 will be much higher than Comparative Examples 1.
Embodiment 4
The chemical etching liquid that the present embodiment explanation is provided by the invention and the anti-lateral erosion performance of engraving method.
Method according to embodiment 1 is carried out etching, and different is, and in the middle of described aluminium sheet length to be set be 3 centimetres, and width is 2 centimetres a retaining layer, and the antiacid layer of coating places etching solution to carry out etching then above, and etch depth is 0.6 millimeter.Remove antiacid layer then, with the most long narrow degree at vernier caliper measurement retaining layer width place.According to above-mentioned identical method, other gets 2 aluminium sheets again, and etch depth is respectively 1.2 millimeters and 1.8 millimeters, with the most long narrow degree at vernier caliper measurement retaining layer width place.The result is as shown in table 2.
Comparative Examples 2
Present embodiment explanation prior art provide chemical etching liquid and the anti-lateral erosion performance of engraving method.
Method according to Comparative Examples 1 is carried out etching, and different is, and in the middle of described aluminium sheet length to be set be 3 centimetres, and width is 2 centimetres a retaining layer, and the antiacid layer of coating places etching solution to carry out etching then above, and etching period is 20 minutes.Remove antiacid layer then, with the most long narrow degree at vernier caliper measurement retaining layer width place.According to above-mentioned identical method, other gets 2 aluminium sheets again, and etching is 2 minutes respectively, after 3 minutes, with the most long narrow degree at vernier caliper measurement retaining layer width place.The result is as shown in table 2.
Embodiment 5
The chemical etching liquid that the present embodiment explanation is provided by the invention and the anti-lateral erosion performance of engraving method.
Method according to embodiment 2 is carried out etching, and different is, and in the middle of described aluminium sheet length to be set be 3 centimetres, and width is 2 centimetres a retaining layer, and the antiacid layer of coating places etching solution to carry out etching then above, and etching period is 2 minutes.Remove antiacid layer then, with the most long narrow degree at vernier caliper measurement retaining layer width place.According to above-mentioned identical method, other gets 2 aluminium sheets again, and etching is 2 minutes respectively, after 3 minutes, with the most long narrow degree at vernier caliper measurement retaining layer width place.The result is as shown in table 2.
Embodiment 6
The chemical etching liquid that the present embodiment explanation is provided by the invention and the anti-lateral erosion performance of engraving method.
Method according to embodiment 3 is carried out etching, and different is, and in the middle of described aluminium sheet length to be set be 3 centimetres, and width is 2 centimetres a retaining layer, and the antiacid layer of coating places etching solution to carry out etching then above, and etching period is 2 minutes.Remove antiacid layer then, with the most long narrow degree at vernier caliper measurement retaining layer width place.According to above-mentioned identical method, other gets 2 aluminium sheets again, and etching is 2 minutes respectively, after 3 minutes, with the most long narrow degree at vernier caliper measurement retaining layer width place.The result is as shown in table 2.
Table 2
| The embodiment numbering | Embodiment 4 | Comparative Examples 2 | Embodiment 5 | Embodiment 6 |
| Former width (centimetre) | 2 | 2 | 2 | 2 |
| Be etched to the degree of depth and be width place after 0.6 millimeter the most long narrow degree (centimetre) | 1.98 | 1.71 | 1.99 | 1.99 |
| Be etched to the degree of depth and be width place after 1.2 millimeters the most long narrow degree (centimetre) | 1.97 | 1.64 | 1.95 | 1.96 |
| Be etched to the degree of depth and be width place after 1.8 millimeters the most long narrow degree (centimetre) | 1.95 | 1.58 | 1.94 | 1.95 |
As can be seen from Table 2, when etch depth was 0.6 millimeter, the retaining layer of Comparative Examples 2 was by 2 centimetres of lateral erosion to 1.71 of former width centimetre, and the retaining layer width of embodiment 4-6 is all more than 1.98 centimetres; When etch depth is 1.2 millimeters, the retaining layer of Comparative Examples 2 is by 2 centimetres of lateral erosion to 1.64 of former width centimetre, and the retaining layer width of embodiment 4-6 is all more than 1.95 centimetres; When etch depth was 1.8 millimeters, the retaining layer of Comparative Examples 2 was by 2 centimetres of lateral erosion to 1.58 of former width centimetre, and the retaining layer width of embodiment 4-6 is all more than 1.94 centimetres.
Therefore, adopt etching solution provided by the invention and engraving method can obviously reduce the generation of side etching phenomenon.
Claims (10)
1. chemical etching liquid, this etching solution is the aqueous solution that contains sulfuric acid and phosphoric acid, it is characterized in that, also contains tensio-active agent in this etching solution.
2. etching solution according to claim 1 wherein, is a benchmark with the total amount of etching solution, and described vitriolic content is 10-50 weight %, and the content of described phosphoric acid is 30-70 weight %, and the content of described tensio-active agent is weight 0.1-5 weight %.
3. etching solution according to claim 2 wherein, is a benchmark with the total amount of etching solution, and described vitriolic content is 10-30 weight %, and the content of described phosphoric acid is 30-60 weight %, and the content of described tensio-active agent is 0.1-1 weight %.
4. according to any described etching solution among the claim 1-3, wherein, described tensio-active agent is an anion surfactant.
5. etching solution according to claim 4, wherein, described anion surfactant is one or more in Sodium dodecylbenzene sulfonate, Witco 1298 Soft Acid, sodium alkyl sulfate, fatty alcohol sulphuric acid, sodium lauryl sulphate, the dodecyl sulphate.
6. etching solution according to claim 5, wherein, described anion surfactant is Sodium dodecylbenzene sulfonate and/or Witco 1298 Soft Acid.
7. etching solution according to claim 1, wherein, described etching solution also contains sustained release dosage, and described sustained release dosage is water-soluble phosphate and/or water-soluble oxalate, is benchmark with the total amount of etching solution, and the content of described sustained release dosage is 1-10 weight %.
8. etching solution according to claim 7, wherein, described sustained release dosage is one or more in sodium phosphate, potassiumphosphate, sodium oxalate, the potassium oxalate.
9. the electrochemical etching method of aluminium and aluminium alloy is characterized in that this method is an anode with the aluminum or aluminum alloy material, with the stereotype is negative electrode, described anode and negative electrode are placed etching solution, carry out electrolytically etching, described etching solution is any described etching solution among the right 1-8.
10. method according to claim 9, wherein, the power supply of described electrolytically etching is a direct supply, size of current is 5.0A/dm
2-15.0A/dm
2, described etching solution temperature is 40-70 ℃, etching period is 1-5 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101726139A CN101210340B (en) | 2006-12-30 | 2006-12-30 | Electrochemical etching liquid and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101726139A CN101210340B (en) | 2006-12-30 | 2006-12-30 | Electrochemical etching liquid and etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101210340A true CN101210340A (en) | 2008-07-02 |
| CN101210340B CN101210340B (en) | 2010-08-25 |
Family
ID=39610590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101726139A Expired - Fee Related CN101210340B (en) | 2006-12-30 | 2006-12-30 | Electrochemical etching liquid and etching method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101210340B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234806A (en) * | 2010-04-23 | 2011-11-09 | 比亚迪股份有限公司 | Stainless steel etching solution and etching method |
| CN102691080A (en) * | 2011-03-24 | 2012-09-26 | 鸿富锦精密工业（深圳）有限公司 | Aluminum product and preparation method thereof |
| CN102795606A (en) * | 2011-05-25 | 2012-11-28 | 华广光电股份有限公司 | Method for preparing aluminum nitride sheet |
| CN102797029A (en) * | 2012-09-10 | 2012-11-28 | 广州波耳化工材料有限公司 | Electrolytic polishing agent |
| CN103160909A (en) * | 2011-12-15 | 2013-06-19 | 比亚迪股份有限公司 | Electroetching solution used for electroetching of amorphous alloy member and etching method |
| WO2016082384A1 (en) * | 2014-11-24 | 2016-06-02 | 京东方科技集团股份有限公司 | Etching solution |
| CN106618598A (en) * | 2016-11-15 | 2017-05-10 | 惠州市力道电子材料有限公司 | Tungsten alloy micro-needle electrode capable of limiting piercing depth, preparation method thereof, and blood glucose monitoring device |
| CN108360057A (en) * | 2018-01-12 | 2018-08-03 | 沈阳化工大学 | A kind of bright as silver electrochemistry graphic context label technique of efficient stainless steel |
| CN110304834A (en) * | 2019-07-19 | 2019-10-08 | 江苏金旭新材料科技有限公司 | A kind of etching solution and the technique using the obtained ground glass cell phone rear cover of the etching solution |
| CN114790568A (en) * | 2022-05-24 | 2022-07-26 | 安徽强邦新材料股份有限公司 | Electrolyte for producing CTP (computer to plate) substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1049259C (en) * | 1994-12-29 | 2000-02-09 | 华中理工大学 | Electrochemical polishing method for aluminum or aluminum alloy welding wire |
| CN100419122C (en) * | 2004-11-24 | 2008-09-17 | 鸿富锦精密工业（深圳）有限公司 | Spraying type aluminium alloy chemical etching liquid |
-
2006
- 2006-12-30 CN CN2006101726139A patent/CN101210340B/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234806A (en) * | 2010-04-23 | 2011-11-09 | 比亚迪股份有限公司 | Stainless steel etching solution and etching method |
| CN102234806B (en) * | 2010-04-23 | 2013-05-08 | 比亚迪股份有限公司 | Stainless steel etching solution and etching method |
| CN102691080A (en) * | 2011-03-24 | 2012-09-26 | 鸿富锦精密工业（深圳）有限公司 | Aluminum product and preparation method thereof |
| CN102691080B (en) * | 2011-03-24 | 2016-08-03 | 广东广云新材料科技股份有限公司 | Aluminum products |
| CN102795606A (en) * | 2011-05-25 | 2012-11-28 | 华广光电股份有限公司 | Method for preparing aluminum nitride sheet |
| CN103160909A (en) * | 2011-12-15 | 2013-06-19 | 比亚迪股份有限公司 | Electroetching solution used for electroetching of amorphous alloy member and etching method |
| CN102797029B (en) * | 2012-09-10 | 2015-04-15 | 广州波耳化工材料有限公司 | Electrolytic polishing agent |
| CN102797029A (en) * | 2012-09-10 | 2012-11-28 | 广州波耳化工材料有限公司 | Electrolytic polishing agent |
| WO2016082384A1 (en) * | 2014-11-24 | 2016-06-02 | 京东方科技集团股份有限公司 | Etching solution |
| US10030197B2 (en) | 2014-11-24 | 2018-07-24 | Boe Technology Group Co., Ltd. | Etching solution |
| CN106618598A (en) * | 2016-11-15 | 2017-05-10 | 惠州市力道电子材料有限公司 | Tungsten alloy micro-needle electrode capable of limiting piercing depth, preparation method thereof, and blood glucose monitoring device |
| CN108360057A (en) * | 2018-01-12 | 2018-08-03 | 沈阳化工大学 | A kind of bright as silver electrochemistry graphic context label technique of efficient stainless steel |
| CN110304834A (en) * | 2019-07-19 | 2019-10-08 | 江苏金旭新材料科技有限公司 | A kind of etching solution and the technique using the obtained ground glass cell phone rear cover of the etching solution |
| CN114790568A (en) * | 2022-05-24 | 2022-07-26 | 安徽强邦新材料股份有限公司 | Electrolyte for producing CTP (computer to plate) substrate |
| CN114790568B (en) * | 2022-05-24 | 2023-09-26 | 安徽强邦新材料股份有限公司 | Electrolyte for CTP plate base production |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101210340B (en) | 2010-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101210340B (en) | Electrochemical etching liquid and etching method | |
| CN101864584B (en) | Barrel plating electroplate liquid and battery steel shell method of barrel electroplating | |
| CN100390322C (en) | Chemical etching solution for titanium and titanium alloy | |
| CN101634027A (en) | Method for preparing monocrystal silicon textured surface | |
| CN100585023C (en) | Preparation technology for hard anode oxide film of aluminum section bar | |
| CN102766888A (en) | Method for plating magnesium alloy based on ionic liquid plating solution | |
| CN103196733A (en) | Etchant for displaying metallographic structure of nickel-based high temperature alloy and method | |
| CN110369712A (en) | A kind of preparation method for covering silver-bearing copper powder | |
| CN103726084B (en) | The method of electro-deposition Cu-Mo-Ni/Co alloy layer | |
| CN106521503A (en) | Organic acid type super coarsening agent for copper surface | |
| CN101736338B (en) | Composite antioxidant applied to copper powder | |
| CN101348930B (en) | Electroplating method of aluminum alloy | |
| CN106884195B (en) | A kind of plated film magnesium and its alloy and preparation method thereof | |
| CN111235623A (en) | Electrochemical etching method for titanium or titanium alloy surface | |
| CN102899703A (en) | Silicate electrolyte and application of silicate electrolyte in magnesium alloy micro-arc oxidation film preparation | |
| CN103409753B (en) | Metal etchants and preparation method thereof | |
| CN103614752A (en) | Method for plating copper on surface of zirconium material | |
| CN111349957A (en) | Surface palladium-free environment-friendly low-cost activation electroplating process | |
| US3445355A (en) | Method and composition for the electrolytic etching of beryllium-copper alloys | |
| CN206359652U (en) | De-plating device | |
| CN101812719A (en) | Low-alkalinity electrolytic deburring solution, preparation method and use method thereof | |
| KR870011275A (en) | Electrolyzer electrode, manufacturing method thereof and electrolyzer using same | |
| CN108172754A (en) | A kind of preparation method of lithium ion battery aluminium foil, micropore aluminium foil and micropore aluminium foil | |
| CN105332016A (en) | Plating solution for plating copper on carbon nano tube | |
| CN1484260A (en) | Method for mfg negative electrode foil of aluminium electrolytic capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100825 Termination date: 20191230 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |