CN101207061B - Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism - Google Patents
Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism Download PDFInfo
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- CN101207061B CN101207061B CN2007101544027A CN200710154402A CN101207061B CN 101207061 B CN101207061 B CN 101207061B CN 2007101544027 A CN2007101544027 A CN 2007101544027A CN 200710154402 A CN200710154402 A CN 200710154402A CN 101207061 B CN101207061 B CN 101207061B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Abstract
The present invention provides a substrate mounting table, a method for manufacturing a substrate mounting table, a substrate processing apparatus and a fluid supply mechanism not only for preventing rudimental spray plating residue in fluid passage, but also for preventing pollution caused by the spray plating residue, and hole jam of the fluid passage. The substrate mounting table (5) is formed by bonding a first plate shaped member (5100 and a second plate shaped member (520), whose integer is plate shaped. a plurality of gas injection openings (511) opened on the first plate shaped member (510). A gas supply channel (521) for supplying the gas through the gas injection openings (511) is arranged on the second plate shaped member (520), and the bottom (521a) of the channel (521) is curve shape. A static chuck (11) is arranged on mounting surface on upper side of the first plate shaped member (510). The static chuck is formed by arranging electrodes (12) among insulation members (10) produced by spraying ceramic layer.
Description
Technical field
The present invention relates to manufacture method, substrate board treatment, the fluid supply mechanism of substrate-placing platform, substrate-placing platform, especially relate to substrate-placing platform, the manufacture method of substrate-placing platform, substrate board treatment, the fluid supply mechanism of the plasma treatment that is fit to semiconductor substrate etc.
Background technology
Up to now, in the substrate board treatment of the plasma treatment of semiconductor substrate etc. being implemented plasma etching etc. etc., in the substrate-placing platform of mounting substrate, possess the fluid supply mechanism that is used for supplying with refrigerating gases such as helium and be well known to substrate back one side.In addition, on the aforesaid substrate mounting table, ceramic deposited metal such as Al2O3 also be well known (for example, with reference to patent documentation 1) is set on the substrate-placing face as the insulating barrier that constitutes electrostatic chuck etc.
[patent documentation 1] TOHKEMY 2004-47653 communique
Summary of the invention
As the method for making the aforesaid substrate mounting table, for example, constitute separately first plate-shaped member that forms a plurality of gas supply holes, be formed with on the surface as second plate-shaped member that is used for to the groove of the gas supply passageway of these gas supply hole supply gas, by soldering etc. they are welded into an integral body, afterwards, form the method for ceramic deposited metal by the pottery of spraying plating on mounting surface.
In said method, when ceramic spraying plating, the spraying plating pottery will be invaded in the gas supply hole.Therefore, and air etc. is sprayed from the gas supply hole, and meanwhile carry out ceramic spraying plating, thus make the spraying plating pottery be difficult to invade in the gas supply hole.But, in the ejection of above-mentioned this air etc., can't prevent fully that the spraying plating pottery from invading the inside of gas supply hole.Therefore, must clean the inside of invading the gas supply hole and attached to the flushing operation of the spraying plating pottery of its bottom.
But, find behind the process detailed surveies such as the inventor, also be difficult to remove fully with cleaning sometimes attached to the spraying plating pottery at places such as gas supply hole bottom etc. securely, exist the spraying plating pottery as the spraying plating residue and residual problem sometimes.Under the situation about using as product, thereby this spraying plating residue peels off and pollutes in semiconductor wafer or the treatment chamber, thereby and the hole plug that causes taking place the gas supply hole take place because of the descend problem of caused temperature control aspect of refrigerating gas pressure.
The present invention produces at above-mentioned existing situation, its purpose is to provide a kind of not only can prevent residual spraying plating residue in fluid passage, and, can prevent pollution, the substrate-placing platform that prevents the hole plug of fluid passage, the manufacture method of substrate-placing platform, substrate board treatment, fluid supply mechanism that the spraying plating residue causes.
The substrate-placing platform of first aspect present invention is characterized in that, possesses plate-shaped member, and this plate-shaped member has: mounting has the mounting surface of substrate; Described mounting surface upper shed and between this mounting surface and described substrate a plurality of gas squit holes of supply gas; With the gas supply passageway that is used for to described gas squit hole supply gas, and described substrate-placing platform is provided with the ceramic deposited metal that covers described mounting surface, and the inwall of the described gas supply passageway at relative with described gas squit hole at least position forms the curved surface shape.
The substrate-placing platform of second aspect present invention is the described substrate-placing platform of first aspect present invention, it is characterized in that, described gas supply passageway is total by a plurality of described gas squit holes.
The substrate-placing platform of third aspect present invention is the described substrate-placing platform of second aspect present invention, it is characterized in that described plate-shaped member has first plate-shaped member of described gas squit hole by welding and has the bottom and constitutes for second plate-shaped member of curved groove.
The fourth aspect present invention substrate-placing platform is the described substrate-placing platform of third aspect present invention, it is characterized in that described second plate-shaped member is provided with and is used for gas is supplied with the gas supply hole in the described gas supply passageway and is used to supply with or discharge the Clean-hole that is used to clean the fluid in the described gas supply passageway.
The substrate-placing platform of fifth aspect present invention is the described substrate-placing platform of any one party face in the present invention's first～fourth aspect, it is characterized in that described plate-shaped member is made of aluminium, is formed with anode oxide film in described gas supply passageway.
The manufacture method of the substrate-placing platform of sixth aspect present invention is characterised in that described substrate-placing platform possesses plate-shaped member, and this plate-shaped member has: mounting has the mounting surface of substrate; Described mounting surface upper shed and between this mounting surface and described substrate a plurality of gas squit holes of supply gas; With the gas supply passageway that is used for to described gas squit hole supply gas, and described substrate-placing platform is provided with the ceramic deposited metal that covers described mounting surface, and this method comprises: the inwall that forms at least with the described gas supply passageway at the relative position of described gas squit hole is the operation of curved described plate-shaped member; Form the operation of ceramic deposited metal on one side on one side in the described mounting surface of described plate-shaped member from described gas squit hole ejection gas; With the operation that described gas supply passageway inside is cleaned.
The manufacture method of the substrate-placing platform of seventh aspect present invention is the manufacture method of the described substrate-placing platform of sixth aspect present invention, it is characterized in that, described gas supply passageway is total by a plurality of described gas squit holes.
The manufacture method of the substrate-placing platform of eighth aspect present invention is the manufacture method of the described substrate-placing platform of seventh aspect present invention, it is characterized in that described plate-shaped member has first plate-shaped member of described gas squit hole by welding and has the bottom and forms for second plate-shaped member of curved groove.
The manufacture method of the substrate-placing platform of ninth aspect present invention is the manufacture method of the described substrate-placing platform of eighth aspect present invention, it is characterized in that, use is arranged at the gas supply hole of described second plate-shaped member and is arranged at the Clean-hole of described second plate-shaped member, to the internal feed of described gas supply passageway with discharge Clean-fluid and clean.
The manufacture method of the substrate-placing platform of tenth aspect present invention is the manufacture method of the substrate-placing platform of any one party face in sixth aspect present invention～the 9th aspect, it is characterized in that, described plate-shaped member is made of aluminium, this method is included in before the operation that forms ceramic deposited metal, forms the operation of anode oxide film in described gas supply passageway.
The present invention the tenth substrate board treatment on the one hand is characterised in that, possesses to hold substrate and to its treatment chamber of handling, in described treatment chamber, be equipped with aspect first aspect present invention～5th in each described substrate-placing platform.
The fluid supply mechanism of the present invention the 12 aspect is characterised in that, has plate-shaped member, this plate-shaped member possesses first plate-shaped member of a plurality of fluid ejection ports by welding and possesses formation second plate-shaped member of groove total by a plurality of described fluid ejection ports and supply with the fluid supply passageway of fluid to this fluid ejection port and constitutes, be formed with ceramic spraying plating rete on the surface of described first plate-shaped member, the bottom of described groove forms the curved surface shape.
The invention effect
According to the present invention, then can provide a kind of and not only can prevent residual spraying plating residue in the fluid passage, and, can prevent pollution that the spraying plating residue causes, substrate-placing platform, the manufacture method of substrate-placing platform, substrate board treatment, the fluid supply mechanism of the hole plug of fluid passage take place.
Description of drawings
Fig. 1 is the summary construction diagram of the plasma-etching apparatus of embodiments of the present invention.
Fig. 2 is the enlarged diagram of major part cross-section structure of the substrate-placing platform of embodiments of the present invention.
Fig. 3 is the structure chart of upper face side of first plate-shaped member of the substrate-placing platform of Fig. 2.
Fig. 4 is the structure chart of upper face side of second plate-shaped member of the substrate-placing platform of Fig. 2.
Fig. 5 is the enlarged diagram of major part cross-section structure of the substrate-placing platform of comparative example.Symbol description
5 substrate-placing platforms; 10 insulating elements (ceramic deposited metal); 11 electrostatic chucks; 12 electrodes; 510 first plate-shaped members; 511 squit holes; 520 second plate-shaped members; 521 grooves; The 521a bottom
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.Fig. 1 is the cross section structure figure as the plasma-etching apparatus of the substrate board treatment of present embodiment.At first, the structure with reference to Fig. 1 article on plasma body Etaching device describes.
The battery lead plate of plasma-etching apparatus 1 is parallel up and down relatively, and constitutes the capacitive coupling type parallel flat Etaching device that connects plasma formation power supply.
Plasma-etching apparatus 1 for example has the treatment chamber (container handling) 2 that drum was made and formed to the aluminium crossed by anodized on the surface etc., and this treatment chamber 2 is grounded.Bottom in treatment chamber 2 by insulation boards such as pottery 3 be provided be used for the mounting object being treated for example semiconductor wafer W be approximately columniform base support platform 4.Be provided with the substrate-placing platform (pedestal) 5 that constitutes lower electrode above the base support platform 4 at this, substrate-placing platform 5 is connected with high pass filter (HPF) 6.Detailed structure for this substrate-placing platform 5 will be described hereinafter.
Be provided with cryogen chamber 7 in the inside of base support platform 4, cold-producing medium is imported in this cryogen chamber 7 by cold-producing medium ingress pipe 8 and circulation therein, its cold and hot substrate-placing platform 5 that passes through is conducted heat to semiconductor wafer W, so semiconductor wafer W just is controlled in the temperature of expection.
The upside central portion of substrate-placing platform 5 forms the discoideus of convex, and the electrostatic chuck 11 identical shaped substantially with semiconductor wafer W is set in the above.Electrostatic chuck 11 configured electrodes 12 and constituting between insulating element (constituting) 10 by ceramic sputtered films of bismuth.Apply for example direct voltage of 1.5kV from the DC power supply 13 that is connected with electrode 12, like this, for example utilize Coulomb force Electrostatic Absorption semiconductor wafer W.
In insulation board 3, base support platform 4, substrate-placing platform 5, electrostatic chuck 11, form and be used for supplying with the gas passage 14 of heat transfer medium (for example He gas etc.) to the back side of semiconductor wafer W, by the cold and hot semiconductor wafer W that is communicated to of this heat transfer medium substrate-placing platform 5, so semiconductor wafer W just is maintained at the temperature of regulation.
At the upper end of substrate-placing platform 5 periphery, so that the focusing ring 15 of ring-type to be set around the mode that is positioned in the semiconductor wafer W on the electrostatic chuck 11.This focusing ring 15 for example adopts conductive material formations such as silicon, and has the etched inhomogeneity effect of raising.
Parallel relative and upper electrode 21 is set with this substrate-placing platform 5 above substrate-placing platform 5.This upper electrode 21 is by the upper support of insulating element 22 processed chambers 2.Upper electrode 21 is made of battery lead plate 24, the electrode support 25 that is made of conductive material that supports this battery lead plate 24.Battery lead plate 24 constitutes the opposite face with substrate-placing platform 5, and has a plurality of squit holes 23.This battery lead plate 24 for example is made of silicon, perhaps quartz cover is being set by the surface on by the aluminium of anodized (pellumina processing) and constitutes.Can change the interval of substrate-placing platform 5 and upper electrode 21.
The central authorities of the electrode support 25 in upper electrode 21 are provided with gas introduction port 26, and this gas introduction port 26 is connected with gas supply pipe 27.And this gas supply pipe 27 is connected with the processing gas supply source 30 that is used for supplying with as the etching gas of handling gas by valve 28 and mass flow controller 29.
Be connected with blast pipe 31 in the bottom of treatment chamber 2, this blast pipe 31 is connected with exhaust apparatus 35.Exhaust apparatus 35 possesses turbomolecular pump equal vacuum pump, can will be evacuated to the reduced atmosphere of regulation in the treatment chamber 2, for example is evacuated to the following authorized pressure of 1Pa.In addition, on the sidewall of treatment chamber 2, be provided with gate valve 32, under the state of opening this gate valve 32, semiconductor wafer W between the load locking room (not shown) of adjacency by conveyance.
Substrate-placing platform 5 as lower electrode is connected with second high frequency electric source 50, is inserted with adaptation 51 in this supply lines.This second high frequency electric source 50 has the frequency range lower than first high frequency electric source 40, by adding the frequency of this scope, then can not cause damage to the semiconductor wafer W as handled object, and can produce suitable ionization.The frequency number of second high frequency electric source 50 is preferably in the scope of 1～20MHz.
The operation unification of the plasma-etching apparatus 1 of said structure is controlled by control part 60.Process controller 61, user interface part 62, the storage part 63 of the various piece that possesses CPU and control plasma-etching apparatus 1 are set in this control part 60.
User interface part 62 is managing plasma Etaching device 1 keyboard that carries out order input operation etc., display of the working order visualization display of plasma-etching apparatus 1 etc. is constituted by engineering management person.
In storage part 63, accommodate the scheme of the control program (software) of having stored the various processing that are used under the control of process controller 61 realizing that plasma-etching apparatus 1 is carried out and treatment conditions data etc.As required, according to from indication of user interface part 62 etc., from storage part 63, read arbitrarily scheme and it is moved in process controller 61, like this, just can under the control of process controller 61, in plasma-etching apparatus 1, implement the processing of expection.In addition, the scheme of control program, treatment conditions data etc. can be stored in the computer-readable storage medium (for example hard disk, CD, floppy disk, semiconductor memory etc.) that computer can read, and perhaps the device from other for example transmits and online use at any time by special line.
Stating 1 pair of semiconductor wafer W of plasma-etching apparatus of structure in the use carries out under the situation of plasma etching, at first, semiconductor wafer W is after gate valve 32 is opened, and never illustrated load locking room is moved in the treatment chamber 2, and is positioned on the electrostatic chuck 11.Then, by applying direct voltage from DC power supply 13, semiconductor wafer W just by Electrostatic Absorption on electrostatic chuck 11.Then, gate valve 32 is closed, and utilizes exhaust apparatus 35, the process chamber 2 indoor specified vacuum degree that are evacuated to.
Afterwards, valve 28 is opened, predetermined process gas (etching gas) is adjusted its flow by mass flow controller 29 on one side, on one side from handling gas supply source 30 is imported into upper electrode 21 by gas supply pipe 27, gas introduction port 26 hollow bulb, and, by the squit hole 23 of battery lead plate 24, shown in the arrow of Fig. 1, sprayed to semiconductor wafer W equably.
Pressure in the treatment chamber 2 is retained as the pressure of regulation.Afterwards, the High frequency power of assigned frequency is applied on the upper electrode 21 from first high frequency electric source 40.Thus, between upper electrode 21 and substrate-placing platform 5, produce high-frequency electric field, handle gaseous dissociation and plasmaization as lower electrode.
On the other hand, on the High frequency power that above-mentioned first high frequency electric source 40 of frequency ratio is low is applied to substrate-placing platform 5 as lower electrode from second high frequency electric source 50.Like this, the ion in the plasma is drawn towards substrate-placing platform 5 one sides, and is auxiliary by ion, can improve etched anisotropy.
Plasma etching one finishes, and just stops the supply of High frequency power and the supply of handling gas, and according to the order opposite with said sequence, semiconductor wafer W is taken out of in treatment chamber 2.
Below, with reference to Fig. 2～4, the substrate-placing platform (pedestal) 5 of present embodiment is described.Shown in Fig. 2～4, substrate-placing platform 5 forms discoideus first plate-shaped member 510 and forms the second discoideus plate-shaped member 520 and constitute by bonding, and integral body forms circular plate shape.In the present embodiment, these first plate-shaped members 510 and second plate-shaped member 520 are made of aluminium.
Shown in Fig. 2,3, on first plate-shaped member 510, be provided with a plurality of gas squit holes 511.Shown in Fig. 2,4, on second plate-shaped member 520, form the groove 521 that is used for forming to the gas supply passageway of above-mentioned each gas squit hole 511 supply gas with concentric circles.In this groove 521, it is common that the groove 521 that is located at the outermost perimembranous is arranged on a plurality of gas squit holes 511 of first plate-shaped member, 510 outermost perimembranous.In addition, a plurality of gas squit holes 511 of being arranged on beyond first plate-shaped member, the 510 outermost perimembranous of the diametric groove 521 that is located at a plurality of concentric circles beyond the outermost perimembranous and connects them are common.Like this, just can be at the gas pressure of outermost perimembranous (edge part) with other position change refrigerating gas.
In addition, as shown in Figure 3, on first plate-shaped member 510, be provided with 3 pin-and-holes 512, this pin-and-hole 512 is used for the pin of lifting semiconductor wafer W when disposing the mounting semiconductor wafer W respectively, as shown in Figure 4, the position corresponding with these pin-and-holes 512 also is provided with pin-and-hole 522 on second plate-shaped member 520.In addition, as shown in Figure 4, be provided with on second plate-shaped member 520: be used for respectively the Clean-hole 524 of a plurality of (in example shown in Figure 4, the amounting to 8) of when most peripheral and other groove 521 are supplied with 2 gas supply holes 523 of refrigerating gases and be used at cleaning most peripheral and other groove 521, using.Moreover use in the manufacturing process of cleaning process described later etc. in these Clean-holes 524, and be closed parts seal when using substrate-placing platform 5.
The diameter of gas squit hole 511 shown in Figure 2 for example is about 1mm.And the width of groove 521 shown in Figure 2 for example is about 3mm, the degree of depth is for example for about 2mm.In addition, the bottom 521a of groove 521 forms the curved surface shape, and in the present embodiment, its cross sectional shape is the R face of 1.5mm for the radius towards the convex of bottom.So, become curved reason to be the shaped design of the bottom 521a of groove 521, the spraying plating pottery is difficult to be attached to securely this.Therefore, in groove 521, as long as at least only relative with gas squit hole 511 position (bottom of gas squit hole 511) forms the curved surface shape, but, in order in same operation, to carry out the cutting process of whole groove 521, in the present embodiment, the bottom 521a of whole groove 521 forms curve form.Formation is from the gas supply passageway of these groove 521 grades to gas squit hole 511 supply refrigerating gases, and the inwall of the gas supply passageways that wait in the groove 521 is covered by anode oxide film (pellumina) (not shown).
In addition, on the mounting surface of the upside of first plate-shaped member 510, be provided with electrostatic chuck 11.This electrostatic chuck 11 is by by Al
2O
3Configuration is made of the electrode 12 of the metal metallising film of tungsten (in the present embodiment for) formation between the insulating element 10 that constitutes etc. ceramic sputtered films of bismuth.
Below, the manufacture method of aforesaid substrate mounting table 5 is described.At first, on the plectane of aluminum, form a plurality of gas squit holes 511 and form first plate-shaped member 510, simultaneously, be formed on second plate-shaped member 520 that is formed with on the plectane of aluminum as towards the groove 521 of the gas supply passageway of gas squit hole 511.In addition, on first plate-shaped member 510, form above-mentioned pin-and-hole 512, on second plate-shaped member 520, also form above-mentioned pin-and-hole 522, gas supply hole 523 and Clean-hole 524 etc.
Below, by above-mentioned first plate-shaped member 510 of welding, second plate-shaped members 520 such as solderings.In this soldering operation, near the parts surface the solder side has the tendency of roughening, and still, if the parts surface roughening, in ceramic spraying plating operation described later, the spraying plating pottery sometimes will be securely attached to shaggy part.Therefore, for example, as shown in Figure 5, if weld first plate-shaped member 610 and second plate-shaped member 620 at the bottom of groove 621 621a, then the bottom 621a of groove 621 will become coarse state, and the possibility of block spraying plating pottery 630 firm attachment increases.Therefore, in the present embodiment, as shown in Figure 2, form not in the bottom of groove 521 but the structure of welding first plate-shaped member 510 and second plate-shaped member 520 on the top of groove 521.By adopting this structure, the bottom 521a that then can suppress the groove 521 that block spraying plating pottery 530 easily adheres to becomes coarse state.
Then, in the part of the gas supply passageways such as medial surface of medial surface that becomes gas squit hole 511 and groove 521, form anode oxide film (pellumina) by anodized (alumina treatment).This anode oxide film has makes the spraying plating pottery be difficult to the effect of firm attachment.Even in forming this anode oxide film, as mentioned above,, therefore, also can't form ganoid high-quality anode oxide film because the bottom 521a of groove 521 becomes coarse state.This ganoid high-quality anode oxide film makes the spraying plating pottery be difficult to the effect of firm attachment increase.
Then, supply with gases such as compressed air from gas supply hole 523 and Clean-hole 524 etc., then from gases such as each gas squit hole 511 ejection compressed air, simultaneously, lamination Al successively on mounting surface
2O
3Etc. ceramic sputtered films of bismuth 10, metallising film (electrode) thus 12, ceramic sputtered films of bismuth 10 forms 3 layers electrostatic chuck 11.At this moment, by the ejection of gas, spraying plating pottery etc. becomes and is difficult to enter in the gas squit hole 511, but its part enters in the gas squit hole 511, as shown in phantom in Figure 2, becomes block spraying plating pottery 530 and attached to its bottom 521a.But, in the present embodiment, as shown in Figure 2,, therefore, as shown in Figure 5, compare during for the plane with the bottom 621a of groove 621 because the bottom 521a of groove 521 is the curved surface shape, can prevent to enter spraying plating pottery in the gas squit hole 511 etc. and adhere to securely.
At last, in groove 521, import fluid for example compressed air or water clean, in ceramic spraying plating operation, remove attached to the block spraying plating pottery 530 in the groove 521.This cleaning process uses Clean-hole 524 and gas supply hole 523 shown in Figure 4 to carry out, the air purge operation of can appropriate combination being undertaken by compressed air, simultaneously carry out compressed-air actuated air purge and water flowing operation, be immersed in operation in the acetone equal solvent and wait and carry out.At this moment, as mentioned above, can not adhere to securely, therefore, not only peel off spraying plating pottery 530 easily attached to the bulk in the groove 521 owing to enter the spraying plating pottery etc. of gas squit hole 511, and with compare in the past, can significantly reduce the residual probability of spraying plating residue.
In fact, for the embodiment of above-mentioned structure shown in Figure 2, after implementing cleaning process after the ceramic spraying plating, only just can all remove the spraying plating pottery 530 of bulk by the air purge operation, and the number that can make the residue of the block spraying plating pottery 530 in the groove 521 is zero.On the other hand, as a comparative example, as shown in Figure 5, bottom 621a to groove 621 is that plane substrate-placing platform is investigated the back discovery, although implement successively the air purge operation, simultaneously carry out air purge and water flowing operation, be immersed in operation in the acetone, air purge operation, the operation of carrying out air purge and water flowing simultaneously cleans, but the residue number of the block spraying plating pottery 630 in the groove 621 is 6, can't become 0.
As above explanation according to present embodiment, can not only prevent that the spraying plating residue and residual from staying in the refrigerating gas supply passageway, and can prevent the pollution of spraying plating residue or the hole of fluid passage is blocked.In addition, the present invention is not limited to above-mentioned execution mode, can carry out various distortion.For example, in the above-described embodiment, be illustrated, still, be not limited to plasma-etching apparatus, for example, can be suitable for too for all substrate board treatments such as CVD in plasma-etching apparatus, using situation of the present invention.In addition, in the above-described embodiment, be illustrated in the substrate-placing platform of supplying with refrigerating gas, using embodiments of the present invention, still, the present invention is not limited to substrate-placing platform, can be suitable for too for being used for supplying with the fluid supply mechanism of handling other fluids such as gas.
Claims (12)
1. a substrate-placing platform is characterized in that possessing plate-shaped member, and this plate-shaped member has: mounting has the mounting surface of substrate; Described mounting surface upper shed and between this mounting surface and described substrate a plurality of gas squit holes of supply gas; With the gas supply passageway that is used for to described gas squit hole supply gas, and described substrate-placing platform is provided with the ceramic deposited metal that covers described mounting surface,
The inwall of the described gas supply passageway at relative with described gas squit hole at least position forms the curved surface shape.
2. substrate-placing platform as claimed in claim 1 is characterized in that, described gas supply passageway is total by a plurality of described gas squit holes.
3. 2 substrate-placing platform as claimed in claim is characterized in that, described plate-shaped member has first plate-shaped member of described gas squit hole by welding and has the bottom and constitutes for second plate-shaped member of curved groove.
4. 3 substrate-placing platform as claimed in claim, it is characterized in that described second plate-shaped member is provided with and is used for gas is supplied with the gas supply hole in the described gas supply passageway and is used to supply with or discharge the Clean-hole that is used to clean the fluid in the described gas supply passageway.
5. as each described substrate-placing platform in the claim 1～4, it is characterized in that described plate-shaped member is made of aluminium, in described gas supply passageway, be formed with anode oxide film.
6. the manufacture method of a substrate-placing platform is characterized in that, described substrate-placing platform possesses plate-shaped member, and this plate-shaped member has: mounting has the mounting surface of substrate; Described mounting surface upper shed and between this mounting surface and described substrate a plurality of gas squit holes of supply gas; With the gas supply passageway that is used for to described gas squit hole supply gas, and described substrate-placing platform is provided with the ceramic deposited metal that covers described mounting surface,
This method comprises: the inwall that forms at least with the described gas supply passageway at the relative position of described gas squit hole is the operation of curved described plate-shaped member;
Form the operation of ceramic deposited metal on one side on one side in the described mounting surface of described plate-shaped member from described gas squit hole ejection gas; With
The operation that described gas supply passageway inside is cleaned.
7. the manufacture method of substrate-placing platform as claimed in claim 6 is characterized in that, described gas supply passageway is total by a plurality of described gas squit holes.
8. the manufacture method of substrate-placing platform as claimed in claim 7 is characterized in that, described plate-shaped member has first plate-shaped member of described gas squit hole by welding and has the bottom and forms for second plate-shaped member of curved groove.
9. the manufacture method of substrate-placing platform as claimed in claim 8, it is characterized in that, use is arranged at the gas supply hole of described second plate-shaped member and is arranged at the Clean-hole of described second plate-shaped member, to the internal feed of described gas supply passageway with discharge Clean-fluid and clean.
10. as the manufacture method of each described substrate-placing platform in the claim 6～9, it is characterized in that, described plate-shaped member is made of aluminium, and this method is included in before the operation that forms ceramic deposited metal, forms the operation of anode oxide film in described gas supply passageway.
11. a substrate board treatment is characterized in that, possesses to hold substrate and to its treatment chamber of handling, be equipped with each described substrate-placing platform in the claim 1～5 in described treatment chamber.
12. fluid supply mechanism, it is characterized in that, has plate-shaped member, this plate-shaped member possesses first plate-shaped member of a plurality of fluid ejection ports by welding and possesses formation second plate-shaped member of groove total by a plurality of described fluid ejection ports and supply with the fluid supply passageway of fluid to this fluid ejection port and constitutes, be formed with ceramic spraying plating rete on the surface of described first plate-shaped member
The bottom of described groove forms the curved surface shape.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006337683 | 2006-12-15 | ||
| JP2006337683A JP4937724B2 (en) | 2006-12-15 | 2006-12-15 | Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism |
| JP2006-337683 | 2006-12-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101207061A CN101207061A (en) | 2008-06-25 |
| CN101207061B true CN101207061B (en) | 2010-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101544027A Active CN101207061B (en) | 2006-12-15 | 2007-09-11 | Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4937724B2 (en) |
| KR (1) | KR100948984B1 (en) |
| CN (1) | CN101207061B (en) |
| TW (1) | TWI427734B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011225949A (en) | 2010-04-21 | 2011-11-10 | Ibiden Co Ltd | Carbon component and method of manufacturing the same |
| JP6100564B2 (en) * | 2013-01-24 | 2017-03-22 | 東京エレクトロン株式会社 | Substrate processing apparatus and mounting table |
| CN104752258A (en) * | 2013-12-30 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Cleaning method for plasma-processing chamber |
| WO2015106860A1 (en) * | 2014-01-20 | 2015-07-23 | Asml Netherlands B.V. | Substrate holder and support table for lithography |
| CN106311843B (en) * | 2016-08-31 | 2018-09-21 | 重庆泽田汽车部件有限责任公司 | A kind of cold punching pressure device of automatic discharging |
| KR102188779B1 (en) * | 2018-10-15 | 2020-12-08 | 세메스 주식회사 | Apparatus for surpoting substrate and manufacturing mathod threrof |
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- 2007-12-10 KR KR1020070127552A patent/KR100948984B1/en active IP Right Grant
- 2007-12-14 TW TW096148083A patent/TWI427734B/en active
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| US5350479A (en) * | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100948984B1 (en) | 2010-03-23 |
| JP2008153314A (en) | 2008-07-03 |
| TWI427734B (en) | 2014-02-21 |
| CN101207061A (en) | 2008-06-25 |
| JP4937724B2 (en) | 2012-05-23 |
| KR20080055645A (en) | 2008-06-19 |
| TW200834804A (en) | 2008-08-16 |
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