CN101206914B - 利用磁畴壁的移动的信息存储装置及其制造方法 - Google Patents

利用磁畴壁的移动的信息存储装置及其制造方法 Download PDF

Info

Publication number
CN101206914B
CN101206914B CN2007101597749A CN200710159774A CN101206914B CN 101206914 B CN101206914 B CN 101206914B CN 2007101597749 A CN2007101597749 A CN 2007101597749A CN 200710159774 A CN200710159774 A CN 200710159774A CN 101206914 B CN101206914 B CN 101206914B
Authority
CN
China
Prior art keywords
magnetosphere
information
storing device
groove
information stores
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007101597749A
Other languages
English (en)
Chinese (zh)
Other versions
CN101206914A (zh
Inventor
林志庆
赵恩亨
左圣熏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101206914A publication Critical patent/CN101206914A/zh
Application granted granted Critical
Publication of CN101206914B publication Critical patent/CN101206914B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
CN2007101597749A 2006-12-22 2007-12-21 利用磁畴壁的移动的信息存储装置及其制造方法 Active CN101206914B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020060133095A KR100846509B1 (ko) 2006-12-22 2006-12-22 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법
KR10-2006-0133095 2006-12-22
KR1020060133095 2006-12-22

Publications (2)

Publication Number Publication Date
CN101206914A CN101206914A (zh) 2008-06-25
CN101206914B true CN101206914B (zh) 2012-11-28

Family

ID=39567018

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101597749A Active CN101206914B (zh) 2006-12-22 2007-12-21 利用磁畴壁的移动的信息存储装置及其制造方法

Country Status (3)

Country Link
JP (1) JP5172317B2 (ja)
KR (1) KR100846509B1 (ja)
CN (1) CN101206914B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101168285B1 (ko) * 2006-12-29 2012-07-30 삼성전자주식회사 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법
KR100907471B1 (ko) * 2007-12-06 2009-07-13 고려대학교 산학협력단 나노선 및 이를 이용한 전류 인가 자벽 이동을 이용한메모리 소자
JP6406791B2 (ja) 2017-01-18 2018-10-17 株式会社シマノ 銀鏡膜層を備えた表面装飾構造及びその形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1479945A (zh) * 2001-10-24 2004-03-03 ������������ʽ���� 信息存储装置及其制造方法
CN1653549A (zh) * 2002-05-16 2005-08-10 因芬尼昂技术股份公司 于镶嵌结构中制造磁性随机存取内存补偿单元的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004259912A (ja) 2003-02-26 2004-09-16 Sony Corp 磁気記憶装置およびその製造方法
US6970379B2 (en) 2003-10-14 2005-11-29 International Business Machines Corporation System and method for storing data in an unpatterned, continuous magnetic layer
US6920062B2 (en) * 2003-10-14 2005-07-19 International Business Machines Corporation System and method for reading data stored on a magnetic shift register
JP2006005308A (ja) 2004-06-21 2006-01-05 Victor Co Of Japan Ltd 不揮発性磁気メモリ
US7242604B2 (en) * 2005-01-13 2007-07-10 International Business Machines Corporation Switchable element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1479945A (zh) * 2001-10-24 2004-03-03 ������������ʽ���� 信息存储装置及其制造方法
CN1653549A (zh) * 2002-05-16 2005-08-10 因芬尼昂技术股份公司 于镶嵌结构中制造磁性随机存取内存补偿单元的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Nicholas Owen et al..Patterning Magnetic Antidot-Type Arrays by Ga+ Implantation.《IEEE TRANSACTIONS ON MAGNETICS》.2002,第38卷(第5期),2553-2555. *

Also Published As

Publication number Publication date
JP5172317B2 (ja) 2013-03-27
CN101206914A (zh) 2008-06-25
KR100846509B1 (ko) 2008-07-17
JP2008172219A (ja) 2008-07-24
KR20080058898A (ko) 2008-06-26

Similar Documents

Publication Publication Date Title
US7957175B2 (en) Information storage devices using movement of magnetic domain walls and methods of manufacturing the same
CN101145571B (zh) 采用磁畴壁移动的存储器装置
JP5311809B2 (ja) 磁壁移動を利用した情報記憶装置、その製造方法及びその動作方法
CN101217181B (zh) 磁畴数据存储装置及其制造方法
CN101207176B (zh) 利用磁畴壁的移动的信息存储装置及其制造方法
EP1901305B1 (en) Memory device employing magnetic domain wall movement
US8233305B2 (en) Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same
CN101211652B (zh) 利用磁畴壁移动的信息存储装置和制造该装置的方法
US7924594B2 (en) Data writing and reading method for memory device employing magnetic domain wall movement
CN101206914B (zh) 利用磁畴壁的移动的信息存储装置及其制造方法
KR101168284B1 (ko) 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant