CN101206914B - 利用磁畴壁的移动的信息存储装置及其制造方法 - Google Patents
利用磁畴壁的移动的信息存储装置及其制造方法 Download PDFInfo
- Publication number
- CN101206914B CN101206914B CN2007101597749A CN200710159774A CN101206914B CN 101206914 B CN101206914 B CN 101206914B CN 2007101597749 A CN2007101597749 A CN 2007101597749A CN 200710159774 A CN200710159774 A CN 200710159774A CN 101206914 B CN101206914 B CN 101206914B
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- China
- Prior art keywords
- magnetosphere
- information
- storing device
- groove
- information stores
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003860 storage Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000005381 magnetic domain Effects 0.000 title abstract description 32
- 230000005291 magnetic effect Effects 0.000 claims abstract description 44
- 238000009413 insulation Methods 0.000 claims description 36
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 229910018979 CoPt Inorganic materials 0.000 claims description 7
- 229910005335 FePt Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910003321 CoFe Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910003266 NiCo Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 description 13
- 230000005055 memory storage Effects 0.000 description 12
- 239000000696 magnetic material Substances 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060133095A KR100846509B1 (ko) | 2006-12-22 | 2006-12-22 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
KR10-2006-0133095 | 2006-12-22 | ||
KR1020060133095 | 2006-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101206914A CN101206914A (zh) | 2008-06-25 |
CN101206914B true CN101206914B (zh) | 2012-11-28 |
Family
ID=39567018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101597749A Active CN101206914B (zh) | 2006-12-22 | 2007-12-21 | 利用磁畴壁的移动的信息存储装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5172317B2 (ja) |
KR (1) | KR100846509B1 (ja) |
CN (1) | CN101206914B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101168285B1 (ko) * | 2006-12-29 | 2012-07-30 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
KR100907471B1 (ko) * | 2007-12-06 | 2009-07-13 | 고려대학교 산학협력단 | 나노선 및 이를 이용한 전류 인가 자벽 이동을 이용한메모리 소자 |
JP6406791B2 (ja) | 2017-01-18 | 2018-10-17 | 株式会社シマノ | 銀鏡膜層を備えた表面装飾構造及びその形成方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1479945A (zh) * | 2001-10-24 | 2004-03-03 | ������������ʽ���� | 信息存储装置及其制造方法 |
CN1653549A (zh) * | 2002-05-16 | 2005-08-10 | 因芬尼昂技术股份公司 | 于镶嵌结构中制造磁性随机存取内存补偿单元的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004259912A (ja) | 2003-02-26 | 2004-09-16 | Sony Corp | 磁気記憶装置およびその製造方法 |
US6970379B2 (en) | 2003-10-14 | 2005-11-29 | International Business Machines Corporation | System and method for storing data in an unpatterned, continuous magnetic layer |
US6920062B2 (en) * | 2003-10-14 | 2005-07-19 | International Business Machines Corporation | System and method for reading data stored on a magnetic shift register |
JP2006005308A (ja) | 2004-06-21 | 2006-01-05 | Victor Co Of Japan Ltd | 不揮発性磁気メモリ |
US7242604B2 (en) * | 2005-01-13 | 2007-07-10 | International Business Machines Corporation | Switchable element |
-
2006
- 2006-12-22 KR KR1020060133095A patent/KR100846509B1/ko active IP Right Grant
-
2007
- 2007-12-19 JP JP2007327915A patent/JP5172317B2/ja active Active
- 2007-12-21 CN CN2007101597749A patent/CN101206914B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1479945A (zh) * | 2001-10-24 | 2004-03-03 | ������������ʽ���� | 信息存储装置及其制造方法 |
CN1653549A (zh) * | 2002-05-16 | 2005-08-10 | 因芬尼昂技术股份公司 | 于镶嵌结构中制造磁性随机存取内存补偿单元的方法 |
Non-Patent Citations (1)
Title |
---|
Nicholas Owen et al..Patterning Magnetic Antidot-Type Arrays by Ga+ Implantation.《IEEE TRANSACTIONS ON MAGNETICS》.2002,第38卷(第5期),2553-2555. * |
Also Published As
Publication number | Publication date |
---|---|
JP5172317B2 (ja) | 2013-03-27 |
CN101206914A (zh) | 2008-06-25 |
KR100846509B1 (ko) | 2008-07-17 |
JP2008172219A (ja) | 2008-07-24 |
KR20080058898A (ko) | 2008-06-26 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |