CN101202331A - Method for preparation of insulating film material for batteries - Google Patents
Method for preparation of insulating film material for batteries Download PDFInfo
- Publication number
- CN101202331A CN101202331A CNA2007101776255A CN200710177625A CN101202331A CN 101202331 A CN101202331 A CN 101202331A CN A2007101776255 A CNA2007101776255 A CN A2007101776255A CN 200710177625 A CN200710177625 A CN 200710177625A CN 101202331 A CN101202331 A CN 101202331A
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- Prior art keywords
- film material
- battery
- batteries
- film
- insulating film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Physical Vapour Deposition (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a preparation method of an insulated film material which is used for batteries, belonging to the battery production technical field. The detailed preparation proposals of the insulated film material which is used for batteries are those: (1) polishing of a basic body; (2) cleaning of the basic body; (3) plating with a splashing method; the insulated film material comprises Al2O3, AIN, SiO2 and GaN. The invention aims at improving the safety and reliability of a storage battery in the assembly and application process, provides a plurality of insulated film materials which are used for batteries, and adopts the splashing method, by which insulated film is plated on a shell of the battery for surface decoration. The film which is plated on the surface of the battery has high resistivity, thus completely complying with the requirement of insulation. During the assembly and application process in the storage batter, the battery where surface decoration is carried out can avoid dangerous phenomena such as short circuit, etc.
Description
Technical field
The present invention relates to a kind of preparation of insulating film material for batteries, belong to the battery production technical field.
Background technology
Ni-MH battery, lithium ion battery, fuel cell etc. are as a kind of green battery of novel high-performance, have energy density height, no cadmium pollution, characteristics such as electric current fast charging and discharging greatly, have obtained to use widely in the small portable electronic device.Along with research work deeply and the continuous development of technology, this class battery also progressively is applied on electric tool, motor vehicle and hybrid vehicle, forms the new motive force of development.When this class battery is used on electric vehicle, need be assembled into battery pack by series system, because the shell of this class battery is generally conductivity good metal material, so in the assembling and use of battery pack, tend to cause danger because electrolyte leakage etc. are former thereby the initiation short circuit.Therefore, can effectively solve problems such as short circuit, thereby significantly improve the fail safe and the reliability of battery pack in assembling and use at coating surface one deck insulation film of battery case.
At present, Al
2O
3, AlN, SiO
2, thin-film material such as GaN is applied in a lot of fields.For example, Al
2O
3Film is used for optical fiber at optical field and mixes, and is used to be plated at mechanical field make it resistance to wear on the automobile engine piston and be improved, thereby increases the service life
[1]The AlN film is at machinery
[2], optics, electronic devices and components
[3], there is wide application prospect in SAW (Surface Acoustic Wave) device manufacturing field such as communicate by letter with high-frequency wideband
[4]SiO
2Film has obtained good application at numerous areas, as is used for related devices such as electronic device and integrated device, the device of optical film, transducer
[5]GaN is mainly used to make high-speed microwave device, charge coupled device, dynamic memory, high-brightness blue and green luminotron and UV photodetector
[6]Though these materials are applied in a lot of fields, yet there are no report in the application of field of batteries.
The present invention is directed to the problem that battery pack easily is short-circuited in assembling and use, the multiple battery insulating film material is provided, adopt physical method that battery case is carried out the finishing of plating insulation film, thereby improve fail safe and the reliability of battery pack in assembling and use.
Summary of the invention
The objective of the invention is to use insulating film material, the utilization physical method carries out the finishing of plating insulation film to battery case.
The technical scheme of insulation film preparation is divided into the polishing of (1) matrix; (2) matrix cleans; (3) sputtering method plated film.
(1) matrix polishing: the matrix to plated film is polished, is polished, and makes surfacing smooth.
(2) matrix cleans: will carry out cleaned by ultrasonic vibration with acetone, ethanol, distilled water through the matrix after the polishing.
(3) sputtering method plated film: reacting gas is the gas of purity more than 99%, difference according to thin-film material adopts different reaction gases, operating air pressure remains on below the 2Pa, substrate temperature is 20 ℃～500 ℃, target and substrate spacing are more than the 2cm, radio-frequency power is 40W～200W, and sputtering time is 5～100 minutes.Preceding sputtering chamber air pressure is evacuated to of sputter is lower than 6.0 * 10
-5Pa, and the pre-sputter of feeding argon gas was cleaned target surface more than 5 minutes.
The insulation film that is plated on the battery case through said method has high resistivity after tested, excellent insulation performance, the method of testing of resistivity is: insulation film is plated on the battery case surface, case surface does not have the sub-fraction of plated film as an electrode, on the part film, plate the very thin metallic gold of one deck, as another electrode with sputtering method.Film resistance meter applies a voltage between two probe electrodes in contact, making has Weak current to pass through in the film, makes the V-I characteristic curve, and according to Ohm's law, the slope of straight line is exactly the resistance R of film.Because of R=ρ L/S, so ρ=RS/L, wherein ρ is a resistivity again, and L is a film thickness, and S is the effective area of film, and according to the principle of parallel capacitor, the effective area of film is the pairing area of metallic gold electrode.
Need to prove that the insulating film material that the present invention adopts comprises: Al
2O
3, AlN, SiO
2, GaN, the physical method of employing is a sputtering method.
Table 1 is for to be plated on the film resiativity value that records behind the battery case surface with thin-film material provided by the invention.By data in the table as can be seen, these films have high resistivity, satisfy the requirement of insulation.
The film resiativity of table 1 thin-film material
| Material | Al 2O 3 | AlN | SiO 2 | GaN |
| Resistivity/Ω m | 3×10 12 | 1.8×10 9 | 6.5×10 11 | 7.6×10 9 |
In sum, insulating film material for batteries provided by the invention and technology of preparing can be at battery case coating surface one deck insulation films, film has excellent insulation property, thereby can avoid the generation of dangerous phenomenon such as short circuit, improve fail safe and the reliability of battery pack in assembling and use.
Embodiment
Embodiment 1:
Utilize sputtering method plating one deck Al on the battery case surface
2O
3Film, during the sputter experiment, the target that uses is the aluminium target of purity 99.99%, reacting gas is 99.999% high purity oxygen gas, and operating air pressure remains on 0.6Pa, and substrate temperature is 20 ℃, experiment hits and the substrate spacing is 2cm, and radio-frequency power is 40W, and sputtering time is 100 minutes.Preceding sputtering chamber air pressure is evacuated to of sputter is lower than 6.0 * 10
-5Pa, and feed the pre-sputter of argon gas 15 minutes to clean target surface.The Al of preparation
2O
3Film resiativity is 3 * 10
13Ω m.
Embodiment 2:
Utilize sputtering method plating one deck AlN film on the battery case surface, during the sputter experiment, the target that uses is the aluminium target of purity 99.99%, working gas is 99.999% high pure nitrogen, operating air pressure remains on 0.4Pa, and substrate temperature is 500 ℃, and experiment hits and the substrate spacing is 15cm, radio-frequency power is 200W, and sputtering time is 5 minutes.Preceding sputtering chamber air pressure is evacuated to of sputter is lower than 6.0 * 10
-5Pa, and feed the pre-sputter of argon gas 15 minutes to clean target surface.The AlN film resiativity of preparation is 1.8 * 10
10Ω m.
Embodiment 3:
Utilize sputtering method plating one deck SiO on the battery case surface
2Film, during the sputter experiment, the target that uses is high purity quartz plane target, working gas is 99.999% Ar gas, and operating air pressure remains on 0.5Pa, and substrate temperature is 150 ℃, experiment hits and the substrate spacing is 5cm, and radio-frequency power is 100W, and sputtering time is 15 minutes.Preceding sputtering chamber air pressure is evacuated to of sputter is lower than 6.0 * 10
-5Pa, and feed the pre-sputter of argon gas 15 minutes to clean target surface.The SiO of preparation
2Film resiativity is 6.5 * 10
12Ω m.
Embodiment 4:
Utilize sputtering method plating one deck GaN film on the battery case surface, during the sputter experiment, the target that uses is the gallium target of purity 99.99%, working gas is 99.999% high pure nitrogen, operating air pressure remains on 1Pa, and substrate temperature is 300 ℃, and experiment hits and the substrate spacing is 10cm, radio-frequency power is 80W, and sputtering time is 30 minutes.Preceding sputtering chamber air pressure is evacuated to of sputter is lower than 6.0 * 10
-5Pa, and feed the pre-sputter of argon gas 15 minutes to clean target surface.The GaN film resiativity of preparation is 7.6 * 10
9Ω m.
Claims (2)
1. insulating film material for batteries, concrete scheme is: the polishing of (1) matrix, (2) matrix cleans, (3) sputtering method plated film; It is characterized in that: in the sputtering method plated film in the 3rd step, reacting gas is the gas of purity more than 99%, difference according to thin-film material adopts different reaction gases, operating air pressure remains on below the 2Pa, substrate temperature is 20 ℃～500 ℃, target and substrate spacing are more than the 2cm, and radio-frequency power is 40W～200W, and sputtering time is 5～100 minutes; Preceding sputtering chamber air pressure is evacuated to of sputter is lower than 6.0 * 10
-5Pa, and the pre-sputter of feeding argon gas was cleaned target surface more than 5 minutes.
2. according to the insulating film material for batteries described in the claim 1, it is characterized in that: insulating film material comprises Al
2O
3, AlN, SiO
2, GaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101776255A CN101202331A (en) | 2007-11-19 | 2007-11-19 | Method for preparation of insulating film material for batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101776255A CN101202331A (en) | 2007-11-19 | 2007-11-19 | Method for preparation of insulating film material for batteries |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101202331A true CN101202331A (en) | 2008-06-18 |
Family
ID=39517372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101776255A Pending CN101202331A (en) | 2007-11-19 | 2007-11-19 | Method for preparation of insulating film material for batteries |
Country Status (1)
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|---|---|
| CN (1) | CN101202331A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263243A (en) * | 2011-06-21 | 2011-11-30 | 浙江大学 | Preparation methods for arrayed nickel silicon nanowire and nickel silicon-silicon core-shell nanowire |
| CN102456865A (en) * | 2010-10-18 | 2012-05-16 | 深圳市斯盛能源科技有限公司 | Cathode and anode insulation method of metal-shell lithium ion battery |
| CN103633265A (en) * | 2013-12-04 | 2014-03-12 | 四川长虹电源有限责任公司 | High capacity power lithium ion battery for aviation |
| CN103988332A (en) * | 2012-02-07 | 2014-08-13 | 株式会社Lg化学 | Prismatic battery pack having novel structure |
| CN102232251B (en) * | 2008-10-07 | 2014-11-19 | 江森自控帅福得先进能源动力***有限责任公司 | Electrochemical cell having an electrically-insulated housing |
| CN110016648A (en) * | 2018-01-10 | 2019-07-16 | 核工业西南物理研究院 | It is a kind of to be dielectrically separated from coating production suitable for high-temperature piezoelectric sensor |
| CN115295934A (en) * | 2022-08-08 | 2022-11-04 | 常州长盈精密技术有限公司 | Cylindrical battery shell, cylindrical battery and manufacturing process thereof |
-
2007
- 2007-11-19 CN CNA2007101776255A patent/CN101202331A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102232251B (en) * | 2008-10-07 | 2014-11-19 | 江森自控帅福得先进能源动力***有限责任公司 | Electrochemical cell having an electrically-insulated housing |
| CN102456865A (en) * | 2010-10-18 | 2012-05-16 | 深圳市斯盛能源科技有限公司 | Cathode and anode insulation method of metal-shell lithium ion battery |
| CN102263243A (en) * | 2011-06-21 | 2011-11-30 | 浙江大学 | Preparation methods for arrayed nickel silicon nanowire and nickel silicon-silicon core-shell nanowire |
| CN102263243B (en) * | 2011-06-21 | 2013-06-05 | 浙江大学 | Preparation methods for arrayed nickel silicon nanowire and nickel silicon-silicon core-shell nanowire |
| CN103988332A (en) * | 2012-02-07 | 2014-08-13 | 株式会社Lg化学 | Prismatic battery pack having novel structure |
| CN103633265A (en) * | 2013-12-04 | 2014-03-12 | 四川长虹电源有限责任公司 | High capacity power lithium ion battery for aviation |
| CN103633265B (en) * | 2013-12-04 | 2016-11-23 | 四川长虹电源有限责任公司 | Capacity power lithium ion battery for aviation |
| CN110016648A (en) * | 2018-01-10 | 2019-07-16 | 核工业西南物理研究院 | It is a kind of to be dielectrically separated from coating production suitable for high-temperature piezoelectric sensor |
| CN115295934A (en) * | 2022-08-08 | 2022-11-04 | 常州长盈精密技术有限公司 | Cylindrical battery shell, cylindrical battery and manufacturing process thereof |
| CN115295934B (en) * | 2022-08-08 | 2024-04-26 | 常州长盈精密技术有限公司 | Cylindrical battery shell, cylindrical battery and manufacturing process of cylindrical battery |
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