CN101182200A - High-frequency high permittivity ceramic medium and preparation method thereof - Google Patents
High-frequency high permittivity ceramic medium and preparation method thereof Download PDFInfo
- Publication number
- CN101182200A CN101182200A CNA2007101500654A CN200710150065A CN101182200A CN 101182200 A CN101182200 A CN 101182200A CN A2007101500654 A CNA2007101500654 A CN A2007101500654A CN 200710150065 A CN200710150065 A CN 200710150065A CN 101182200 A CN101182200 A CN 101182200A
- Authority
- CN
- China
- Prior art keywords
- bzh
- frit
- bnt
- glass powder
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a high frequency high dielectric ceramic medium, which is made from the raw materials with the following weight percentage content of 9-31 percent of BZH glass powder and 69-91 percent of BNT ceramic medium frit. The BZH glass powder is made from the raw materials with the following weight percentage content of 32-33 percent of BaO, 26-27 percent of ZnO and 40-41 percent of H3BO4. The BNT ceramic medium frit is made from the raw materials with the following weight percentage content of 19-20 percent of BaCO3, 19-20 percent of Nd2O3, 26-27 percent of Bi2O3 and 34.5-35.5 percent of TiO2. The preparation steps are: firstly, making the BZH glass powder; secondly, making the BNT ceramic medium frit of a BaO-Nd2O3-TiO2 system; thirdly, making the ceramic medium of the BaO-Nd2O3-TiO2 system. The invention overcomes the defect of the prior art that the dielectric constant Epsilon is relatively low and provides the high frequency high dielectric ceramic medium with the advantages of low temperature sintering, high dielectric constant, low dielectric loss and perfect thermal stability and a low temperature co-fired ceramic technology which is applied to the IC field.
Description
Technical field
The present invention relates to a kind of is the ceramic composition of feature with the composition, specifically, is about a kind of BaO-Nd
2O
3-TiO
2System's ceramic dielectic and preparation method thereof.
Background technology
(Low Temperature Cofired Ceramic LTCC) is the integrated assembly technology of a kind of multidisciplinary intersection that attracts people's attention of rising in recent years to LTCC Technology.The LTCC technology is that the low-temperature sintered ceramics powder is made the accurate and fine and close green band of thickness, on the green band, utilize laser boring, micropore slip casting, technologies such as accurate conductor paste printing are made the circuitry needed figure, and with a plurality of passive blocks (as low appearance value electric capacity, resistance, wave filter, impedance transducer, coupling mechanism etc.) imbed in the multilayer ceramic substrate, overlap together then, internal and external electrode can use silver respectively, copper, metals such as gold, make the passive integrated package of three-dimensional circuit network behind the sintering, also can be made into the three-dimensional circuit substrate of built-in passive element, can mount IC and active part on its surface, make passive/active integrated functional module.The development of LTCC technology requires the high-frequency dielectric ceramic material to have high as far as possible specific inductivity (ε＞60 even higher), low-loss, littler temperature coefficient of permittivity and low-temperature sintering temperature.At present, in order to adapt to the requirement of LTCC high-frequency element, many low fever's ceramic systems are by extensive exploitation and utilization, as MgTiO
3-CaTiO
3System, (Zr, Sn) TiO
3-BaO-TiO
2System, BaO-Nd
2O
3-TiO
2System, Bi
2O
3-ZnO-Nb
2O
3System, Ba-Nd-Ti system or the like.People such as Byung-Hae Jung study the Ba-Nd-Ti system, and this technology is disclosed in " Glass-ceramic for low temperature co-fired dielectric ceramicmaterials based on La
2O
3-B
2O
3-TiO
2Glass with BNT ceramics ", Journal of theEuropean Ceramic Society 25 (2005) 3187-3193 are (based on adding La
2O
3-B
2O
3-TiO
2The research of the low temperature co-fired performance of glass BNT pottery) in the paper, it is less than normal that its shortcoming is that this employing LTCC technology prepares the DIELECTRIC CONSTANT of radio ceramics medium, only is 20.At present, the general property of the Ba-Nd-Ti system pottery of existing LTCC technology is, dielectric loss tan δ is about 5 ‰, and the temperature factor TCC of its specific inductivity is about 0.5% under-55 ℃～125 ℃ conditions.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of low-temperature sintering, high-k, low dielectric loss are provided and have the low-temperature co-fired ceramic medium of excellent heat stability.
The present invention is achieved by the following technical programs.
High-frequency high permittivity ceramic medium, its component consists of by raw material weight per-cent:
BZH glass powder 9～31%, BNT ceramic dielectic frit 69～91%; The component of described BZH glass powder and raw material weight degree thereof are BaO 32～33%, ZnO 26～27%, H
3BO
440.5～41%; The component of described BNT ceramic dielectic frit and raw material weight degree thereof are BaCO
318.4 Nd～19.8%,
2O
37.3 Bi～27.6%,
2O
316.4 TiO～40.6%,
233.7～36.2%.
Preferred raw material weight per-cent is:
BZH glass powder 20～25%, BNT ceramic dielectic frit 75～79%; The component of described BZH glass powder and raw material weight degree thereof are BaO 32.5～33%, ZnO 26.5～27%, H
3BO
440.7～41%; The component of described BNT ceramic dielectic frit and raw material weight degree thereof are BaCO
319.5 Nd～19.8%,
2O
319.5 Bi～20%,
2O
326～26.5%, TiO
234.5～35%.
Best raw material weight per-cent is:
BZH glass powder 23%, BNT ceramic dielectic frit 77%; The component of described BZH glass powder and raw material weight degree thereof are BaO 32.6%, ZnO 26.5%, H
3BO
440.9%; The component of described BNT ceramic dielectic frit and raw material weight degree thereof are BaCO
319.5%, Nd
2O
319.6%, Bi
2O
326.1%, TiO
234.8%.
The preparation method of high-frequency high permittivity ceramic medium, step is as follows:
(1) make BZH glass powder:
Press raw material weight per-cent batching, BaO 32～33%, ZnO 26～27%, H
3BO
440.5～41%; Added the deionized water mixing and ball milling 4.5～8 hours with zirconia ball,, cross 250 holes/cm then in 120 ℃ of dryings
2Sub-sieve, powder holds with crucible, and high melt in electric furnace, smelting temperature are 1050～1150 ℃, make the glass slag with quenching method; The glass slag was placed the ball mill ball milling 20～30 hours,, cross 250 holes/cm again in 120 dryings
2Sub-sieve makes BZH glass powder;
(2) make BaO-Nd
2O
3-TiO
2System BNT ceramic dielectic frit:
Press raw material weight per-cent batching, BaCO
318.4 Nd～19.8%,
2O
37.3 Bi～27.6%,
2O
316.4 TiO～40.6%,
233.7～36.2%, added the deionized water mixing and ball milling 6～10 hours with zirconia ball, then in 120 ℃ of dryings, cross 250 holes/cm
2Sub-sieve is put into the sintering oven pre-burning again, and calcined temperature is 1110～1150 ℃, is incubated 1～3 hour, makes BNT ceramic dielectic frit;
(3) make BaO-Nd
2O
3-TiO
2System's ceramic dielectic:
Above-mentioned BNT frit and BZH glass powder are prepared burden by weight percentage by it, BNT frit 69～91%, BZH glass powder 9～31% added the deionized water ball milling 6～12 hours with zirconia ball, then in 120 ℃ of dryings, crossed 250 holes/cm
2Sub-sieve adds the granulation of 6～7wt% paraffin, is pressed into the disk green compact under 80～90Mpa pressure, puts into the sintering kiln roasting at last, and firing temperature is 860～900 ℃, makes ceramic dielectic after the cooling.
The temperature rise rate of the calcined temperature of described step (2) is, is heated to 1110～1150 ℃ by the temperature rise rate of 10 ℃/min.
The temperature rise rate of the firing temperature of described step (3) is that elder generation is heated to 860～900 ℃ by 3～4 ℃/min again by be heated to 500 ℃ of 3 ℃/min, is incubated 0.5～2 hour.
The invention has the beneficial effects as follows provides a kind of BaO-Nd
2O
3-TiO
2Be ceramic dielectic, have sintering temperature and low (900 ℃), its DIELECTRIC CONSTANT can reach 82, and dielectric loss is minimum to be 2 ‰, and temperature factor TCC＜0.5% of its specific inductivity, this porcelain meet the requirement of LTCC The Application of Technology fully.
Embodiment
The present invention is initial feed with the analytical pure, adopts the conventional equipment in present technique field, and embodiment is as follows.
(1) make BZH glass powder:
Press raw material weight per-cent batching, BaO 32.6%, ZnO, 26.5%, H
3BO
440.9%, added the deionized water mixing and ball milling 4.5 hours with zirconia ball, then in 120 ℃ of dryings, cross 250 holes/cm
2Sub-sieve, powder holds with crucible, and high melt in electric furnace, smelting temperature are 1100 ℃, make the glass slag with quenching method; The glass slag was placed the ball mill ball milling 25 hours, then in 120 ℃ of dryings, after 250 holes/cm
2Sub-sieve makes BZH glass.
(2) make BaO-Nd
2O
3-TiO
2System BNT ceramic dielectic frit:
Press raw material weight per-cent batching, BaCO
319.5%, Nd
2O
319.6%, Bi
2O
326.1%, TiO
234.8%, added the deionized water mixing and ball milling 8 hours with zirconia ball, then in 120 ℃ of dryings, cross 250 holes/cm
2Sub-sieve is put into the sintering oven pre-burning, is heated to 1110 ℃ by the temperature rise rate of 10 ℃/min, is incubated 2 hours, makes BNT ceramic dielectic frit;
(3) make BaO-Nd
2O
3-TiO
2System's ceramic dielectic:
Above-mentioned pre-burned BNT frit is smashed, pressed raw material weight per-cent batching, BNT frit 77%, BZH glass powder 23% added the deionized water ball milling 10 hours with zirconia ball, then in 120 ℃ of dryings, crossed 250 holes/cm
2Sub-sieve adds the granulation of 6.5wt% paraffin, is pressed into the disk green compact under 80Mpa pressure, put into the sintering kiln roasting at last, the temperature rise rate by 3 ℃/min is heated to 500 ℃ earlier, and the temperature rise rate by 3.5 ℃/min is heated to 900 ℃ again, be incubated 2 hours, make ceramic dielectic after the cooling.
The ceramic dielectic that sinters reburned ooze silver electrode, welding lead is made the electrical condenser sample; Adopt the conventionally test method to test its dielectric properties, survey relative permittivity ε, the dielectric loss tan δ of its electrical capacity C (pf) and calculation medium with Agilent 4285A LCR Meter (LCR inductance, electric capacity, resistance meter) (55 ℃～125 ℃) under 1MHz, with the change in dielectric constant rate of GZ-ESPECMC-710F type thermostat container and HM27002 type electrical condenser C-T characteristic tester specimen.Its dielectric properties test result is: DIELECTRIC CONSTANT is 82, and the dielectric loss tan δ of this moment is 2 ‰, and the temperature factor TCC of its specific inductivity is 0.5%, meets the requirement of LTCC The Application of Technology fully.
All the other specific embodiments are described in tabulating below:
Table 1 is the related process parameter of making BZH glass powder;
Table 2 is to make BaO-Nd
2O
3-TiO
2The related process parameter of system BNT ceramic dielectic frit;
Table 3 is to make BaO-Nd
2O
3-TiO
2The related process parameter of system's ceramic dielectic and product performance test result.
Table 1
| BaO (％) | ZnO (％) | H 3BO 4 (％) | The ball milling time (h) | Smelting temperature (℃) | Glass slag ball time consuming (h) | |
| Embodiment 1 | 32 | 27 | 41 | 4.5 | 1050 | 20 |
| Embodiment 2 | 32 | 27 | 41 | 4.5 | 1050 | 20 |
| Embodiment 3 | 32.7 | 26.8 | 40.5 | 4.5 | 1100 | 25 |
| Embodiment 4 | 32.7 | 26.8 | 40.5 | 4.5 | 1100 | 25 |
| Embodiment 5 | 32.6 | 26.5 | 40.9 | 7.5 | 1150 | 25 |
| Embodiment 6 | 32.6 | 26.5 | 40.9 | 7.5 | 1150 | 25 |
| Embodiment 7 | 33 | 26 | 41 | 8 | 1150 | 30 |
| Embodiment 8 | 33 | 26 | 41 | 8 | 1150 | 30 |
Table 2
| BaCO 3 (％) | Nd 2O 3 (％) | Bi 2O 3 (％) | TiO 2 (％) | The ball milling time (h) | Calcined temperature (℃) | Soaking time (h) | |
| Embodiment 1 | 19.5 | 19.6 | 26.1 | 34.8 | 6 | 1110 | 2 |
| Embodiment 2 | 19.5 | 19.6 | 26.1 | 34.8 | 10 | 1110 | 2 |
| Embodiment 3 | 19.4 | 19.6 | 26.1 | 34.9 | 8 | 1100 | 2 |
| Embodiment 4 | 19.4 | 19.6 | 26.1 | 34.9 | 8 | 1150 | 2 |
| Embodiment 5 | 19.8 | 27.6 | 16.4 | 36.2 | 8 | 1110 | 2 |
| Embodiment 6 | 18.4 | 7.3 | 40.6 | 33.7 | 8 | 1110 | 2 |
| Embodiment 7 | 19.5 | 25 | 20.7 | 34.8 | 8 | 1110 | 1 |
| Embodiment 8 | 19.5 | 25 | 20.7 | 34.8 | 8 | 1110 | 3 |
Table 3
| BNT frit (%) | BZH glass powder (%) | The ball milling time (h) | Soaking time (h) | Firing temperature (℃) | Paraffin (%) | Pressure (Mpa) | DIELECTRIC CONSTANT | Dielectric loss (‰) | Temperature factor (%) | |
| Embodiment 1 | 77 | 23 | 10 | 0.5 | 900 | 6 | 80 | 77 | 2.5 | 0.5 |
| Embodiment 2 | 77 | 23 | 8 | 1 | 900 | 6.5 | 85 | 78 | 3 | 0.5 |
| Embodiment 3 | 77 | 23 | 12 | 2 | 900 | 7 | 90 | 80 | 2 | 0.5 |
| Embodiment 4 | 77 | 23 | 10 | 2 | 900 | 6 | 80 | 76 | 3 | 0.5 |
| Embodiment 5 | 77 | 23 | 10 | 2 | 900 | 6.5 | 85 | 70 | 2.5 | 0.5 |
| Embodiment 6 | 77 | 23 | 10 | 2 | 900 | 7 | 90 | 68 | 2.5 | 0.5 |
| Embodiment 7 | 69 | 31 | 6 | 2 | 860 | 6 | 80 | 68 | 3 | 0.5 |
| Embodiment 8 | 91 | 9 | 10 | 2 | 860 | 6.5 | 85 | 70 | 3 | 0.5 |
At present, adopt the general property of the Ba-Nd-Ti system pottery of the prior art scheme that conventional preparation method produces to be, the DIELECTRIC CONSTANT of ceramic dielectic is about 20, and dielectric loss tan δ is about 5 ‰, and the temperature factor TCC of its specific inductivity is about 0.5% under-55 ℃～125 ℃ conditions.
By the The performance test results of table 3 medium-high frequency high permittivity ceramic medium as can be seen, the DIELECTRIC CONSTANT of high-frequency high permittivity ceramic medium of the present invention has had significant raising compared to prior art, dielectric loss tan δ also has tangible reduction, and the temperature factor TCC of specific inductivity remains on preferable level.
The present invention is not limited to the foregoing description, and the variation of a lot of details is possible, but therefore this do not run counter to scope and spirit of the present invention.
Claims (6)
1. a high-frequency high permittivity ceramic medium is characterized in that, is made up of by raw material weight per-cent following component:
BZH glass powder 9～31%, BNT ceramic dielectic frit 69～91%; The component of described BZH glass powder and raw material weight degree thereof are BaO 32～33%, ZnO 26～27%, H
3BO
440.5～41%; The component of described BNT ceramic dielectic frit and raw material weight degree thereof are BaCO
318.4 Nd～19.8%,
2O
37.3 Bi～27.6%,
2O
316.4 TiO～40.6%,
233.7～36.2%.
2. high-frequency high permittivity ceramic medium according to claim 1 is characterized in that, is made up of by raw material weight per-cent following component: BZH glass powder 20～25%, BNT ceramic dielectic frit 75～79%; The component of described BZH glass powder and raw material weight degree thereof are BaO 32.5～33%, ZnO 26.5～27%, H
3BO
440.7～41%; The component of described BNT ceramic dielectic frit and raw material weight degree thereof are BaCO
319.5 Nd～19.8%,
2O
319.5 Bi～20%,
2O
326～26.5%, TiO
234.5～35%.
3. high-frequency high permittivity ceramic medium according to claim 1 is characterized in that, is made up of by raw material weight per-cent following component: BZH glass powder 23%, BNT ceramic dielectic frit 77%; The component of described BZH glass powder and raw material weight degree thereof are BaO 32.6%, ZnO 26.5%, H
3BO
440.9%; The component of described BNT ceramic dielectic frit and raw material weight degree thereof are BaCO
319.5%, Nd
2O
319.6%, Bi
2O
326.1%, TiO
234.8%.
4. the preparation method of the high-frequency high permittivity ceramic medium of claim 1 is characterized in that, step is as follows:
(1) make BZH glass powder:
Press raw material weight per-cent batching, BaO 32～33%, ZnO 26～27%, H
3BO
440.5～41%; Added the deionized water mixing and ball milling 4.5～8 hours with zirconia ball,, cross 250 holes/cm then in 120 ℃ of dryings
2Sub-sieve, powder holds with crucible, and high melt in electric furnace, smelting temperature are 1050～1150 ℃, make the glass slag with quenching method; The glass slag was placed the ball mill ball milling 20～30 hours,, cross 250 holes/cm again in 120 dryings
2Sub-sieve makes BZH glass powder;
(2) make BaO-Nd
2O
3-TiO
2System BNT ceramic dielectic frit:
Press raw material weight per-cent batching, BaCO
318.4 Nd～19.8%,
2O
37.3 Bi～27.6%,
2O
316.4 TiO～40.6%,
233.7～36.2%, added the deionized water mixing and ball milling 6～10 hours with zirconia ball, then in 120 ℃ of dryings, cross 250 holes/cm
2Sub-sieve is put into the sintering oven pre-burning again, and calcined temperature is 1110～1150 ℃, is incubated 1～3 hour, makes BNT ceramic dielectic frit;
(3) make BaO-Nd
2O
3-TiO
2System's ceramic dielectic:
Above-mentioned BNT frit and BZH glass powder are prepared burden by weight percentage by it, BNT frit 69～91%, BZH glass powder 9～31% added the deionized water ball milling 6～12 hours with zirconia ball, then in 120 ℃ of dryings, crossed 250 holes/cm
2Sub-sieve adds the granulation of 6～7wt% paraffin, is pressed into the disk green compact under 80～90Mpa pressure, puts into the sintering kiln roasting at last, and firing temperature is 860～900 ℃, makes ceramic dielectic after the cooling.
5. according to the preparation method of the high-frequency high permittivity ceramic medium of claim 4, it is characterized in that the temperature rise rate of the calcined temperature of described step (2) is, be heated to 1110～1150 ℃ by the temperature rise rate of 10 ℃/min.
6. according to the preparation method of the high-frequency high permittivity ceramic medium of claim 4, it is characterized in that the temperature rise rate of the firing temperature of described step (3) is that elder generation is by be heated to 500 ℃ of 3 ℃/min, be heated to 860～900 ℃ by 3～4 ℃/min again, be incubated 0.5～2 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101500654A CN100537472C (en) | 2007-11-05 | 2007-11-05 | High-frequency high permittivity ceramic medium and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101500654A CN100537472C (en) | 2007-11-05 | 2007-11-05 | High-frequency high permittivity ceramic medium and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101182200A true CN101182200A (en) | 2008-05-21 |
| CN100537472C CN100537472C (en) | 2009-09-09 |
Family
ID=39447642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101500654A Expired - Fee Related CN100537472C (en) | 2007-11-05 | 2007-11-05 | High-frequency high permittivity ceramic medium and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100537472C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107176793A (en) * | 2016-03-11 | 2017-09-19 | 上海卡翱投资管理合伙企业（有限合伙） | LTCC ceramic materials and preparation method thereof |
| CN110105067A (en) * | 2019-05-01 | 2019-08-09 | 太原师范学院 | A kind of high dielectric X7R ceramic medium material and preparation method thereof |
| CN113406407A (en) * | 2021-05-10 | 2021-09-17 | 中车青岛四方机车车辆股份有限公司 | Auxiliary power supply support capacitance monitoring method and system |
-
2007
- 2007-11-05 CN CNB2007101500654A patent/CN100537472C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107176793A (en) * | 2016-03-11 | 2017-09-19 | 上海卡翱投资管理合伙企业（有限合伙） | LTCC ceramic materials and preparation method thereof |
| CN107176793B (en) * | 2016-03-11 | 2020-02-14 | 上海卡翱投资管理合伙企业（有限合伙） | LTCC ceramic material and preparation method thereof |
| CN110105067A (en) * | 2019-05-01 | 2019-08-09 | 太原师范学院 | A kind of high dielectric X7R ceramic medium material and preparation method thereof |
| CN110105067B (en) * | 2019-05-01 | 2021-12-28 | 太原师范学院 | High-dielectric X7R ceramic dielectric material and preparation method thereof |
| CN113406407A (en) * | 2021-05-10 | 2021-09-17 | 中车青岛四方机车车辆股份有限公司 | Auxiliary power supply support capacitance monitoring method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100537472C (en) | 2009-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104774005B (en) | Low-temperature sintered lead-free microwave dielectric ceramic and preparation method thereof | |
| CN101318815B (en) | Bismuth-based molybdenum-based microwave dielectric ceramic material sintered at ultra low temperature and manufacture of the same | |
| CN101613200B (en) | Low-temperature sintered microwave medium ceramic material and preparation method thereof | |
| CN104478423B (en) | Ultralow dielectric microwave dielectric ceramic Li2Zn2Si2O7And preparation method thereof | |
| CN102153341B (en) | Medium dielectric constant low-temperature co-fired ceramic material and preparation method thereof | |
| Mohammadi et al. | Effect of frit size on sintering, crystallization and electrical properties of wollastonite glass-ceramics | |
| CN104211391A (en) | Low-temperature sintering temperature-stable medium dielectric constant microwave dielectric ceramic Bi3La5Ti7O26 and preparation method thereof | |
| CN101717245A (en) | Low-temperature co-fired ceramic substrate material and preparation method thereof | |
| Induja et al. | Low κ, low loss alumina-glass composite with low CTE for LTCC microelectronic applications | |
| CN107827452B (en) | Method for reducing loss of calcium copper titanate ceramic by air quenching | |
| CN105565799A (en) | Low-loss temperature-stable high-frequency dielectric ceramic | |
| CN100537472C (en) | High-frequency high permittivity ceramic medium and preparation method thereof | |
| CN102276151B (en) | Technological method for preparing LTCC (low temperature co-fired ceramic) amorphous glass ceramic powder with microwave plasma torch | |
| CN108218406A (en) | Low-temperature co-burning ceramic material of low dielectric constant and low loss and preparation method thereof | |
| Du et al. | Effects of Li-ion substitution on the microwave dielectric properties of low-temperature sintered ceramics with nominal composition Li2xMg2− xSiO4 | |
| CN107827451B (en) | Method for reducing loss of calcium copper titanate ceramic by water quenching | |
| CN101723663B (en) | Microwave medium ceramics with low temperature sintering perovskite structure and preparation method thereof | |
| CN103319177B (en) | Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof | |
| CN101747036A (en) | Low-frequency dielectric ceramic with low-temperature sintering and ultralow temperature change ratio and preparation method thereof | |
| CN103864416A (en) | Method for preparing barium titanate ceramic capacitor medium at low sintering temperature | |
| CN110156457A (en) | A kind of low-temperature co-fired ceramic medium material and preparation method thereof | |
| CN107056277B (en) | Low-temperature sintered medium-dielectric-constant microwave dielectric material and preparation method thereof | |
| CN114671614B (en) | Low-dielectric low-loss calcium-boron-silicon-based microcrystalline glass material and preparation method thereof | |
| CN104311029B (en) | Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic Bi2La4Ti5O19 | |
| CN104311018B (en) | A kind of ultralow dielectric microwave dielectric ceramic and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090909 Termination date: 20101105 |