CN101179013A - Preparation method of self slow-release metal inducing crystallization polycrystalline silicon thin film material and applications - Google Patents
Preparation method of self slow-release metal inducing crystallization polycrystalline silicon thin film material and applications Download PDFInfo
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Abstract
The invention relates to a manufacturing method and application of a slow-releasing metal-induced crystallized polycrystalline silicon film material. The invention is characterized in that the method and application deploy a nickel-silicon mixture target which is sputtered in a mixed gas of argon and oxygen to form a mixed film of the nickel oxide and silicon oxide with low content of nickel as a metal-induced lateral crystallization inducer. Since the nickel is provided in the state of oxide and mixed in the silicon oxide in a low content, only the nickel near a interface of a amorphous silicon and a metal-induced layer can diffuse into the silicon film at a reasonably fast rate, but the nickel on the further position is released into the silicon film with a very slow rate; The amount of nickel atoms on the surface is unrelated to the thickness of the mixed film, so even if the thickness is not even or varied with different batches, the formation states of the crystal nucleus and the inducing front are almost the same. During the succeeding process of lateral crystallization, the slow-releasing nickel constantly replenishes the nickel needed by the inducing front. The invention has the advantage that the residual nickel in the polysilicon can be reduced significantly while an appropriate crystallization rate is maintained, which improves the uniformity and stability of polysilicon materials and device.
Description
[technical field]: the preparing technical field that the present invention relates to polycrystalline silicon film material.By adopting nisiloy mixture sputtering target, induce the source at argon, oxygen gas mixture ionic medium sputter formation low nickel-content nickel oxide, silicon oxide film as metal-induced lateral crystallization, the crystallization of annealing then forms polycrystalline silicon film material.
[background technology]: obtain flat-panel monitors such as high-quality liquid crystal, Organic Light Emitting Diode, must use active Driving technique.The influence that shows signal is crosstalked has been removed in active demonstration, has improved exploration on display resolution ratio and color quality.And the key technology of active display base plate is a thin-film transistor technologies.
The present amorphous silicon film transistor technology that is mainly that Active Matrix Display adopted, its major advantage are technical maturities and simple relatively, the rate of finished products height, and cost is lower.It is low that but the shortcoming of amorphous silicon film transistor is a field-effect mobility, the less stable of device, and this makes it to be difficult to satisfy the colored sequential liquid crystal demonstration of high-speed switch, the requirement that Organic Light Emitting Diode shows and integrated-type shows of current drives.The low-temperature polysilicon film transistor for preparing on the glass substrate has higher mobility and device stability preferably, is suitable for high-speed switch, current drives and integrated substrate manufacture, is the key technology of following flat-panel monitor.
Existing preparation low-temperature polysilicon film technology mainly comprises excimer laser crystallization technology, solid phase crystallization and metal-induced crystallization technology, the former crystalline quality relies on the laser radiation state consumingly, as light intensity, pulse duration, optical wavelength, sweep speed etc.Process window is narrow, the poor stability of flow process, yield of products cost height low, equipment are the weakness of this kind technology.The metal-induced crystallization technology has remarkable advantages above comparing with the excimer laser crystallization aspect several.
In the metal-induced crystallization technology, how effectively the residual volume of metal in polysilicon membrane induced in control, the uniformity consistency of raising prepared in batches polysilicon on the large tracts of land substrate, be obtain high-quality, high evenly, high stable, the high low temperature polycrystalline silicon device that repeats and show the core of active base plate.Adopt the metal-induced lateral crystallization technology to address the above problem preferably, the material and the device performance that are obtained are good.But at present, how further to reduce the residual volume of metal in polysilicon membrane, improve the quality of the film of polysilicon and device thereof and key that process repeatability is still active driving field and pursue one's goal.
The existing conventional metal-induced lateral crystallization is as shown in Figure 1: metal-induced lateral crystallization polysilicon membrane forming process is shown in Fig. 1 (a), at first cvd silicon oxide or silicon nitride barrier 102 on glass substrate 101, deposition of amorphous silicon films 103 and silica cover layer 104 thereon then, and in cover layer, make induction port by lithography, induce metallic nickel 105 to be deposited in the induction port.In annealing process subsequently, shown in Fig. 1 (b), metallic nickel in the induction port and the amorphous silicon below the induction port form nickel silicide, form the intensive nuclei of crystallization afterwards, form metal inducing crystallization polycrystalline silicon film 107, the peak of inducing of marginal zone pools induced longitudinal crystallization leading peak 106 afterwards, and pushes ahead, nickel 108 more than needed in the metal inducement polysilicon in the induction port spreads in polysilicon, constantly replenishes needed nickel amount in the crystallization peak.Nickel content distribution signal is shown in Fig. 1 (c) in the polysilicon membrane, and the metal inducement multi-crystal silicon area nickel content below the induction port is very high, and cross direction profiles induces the place, peak that a nickel content projection is arranged for to decay gradually along the crystallization direction.High nickel content can have a strong impact on the stability of device and the leakage current characteristic of device, therefore, must try every possible means to reduce the nickel content in the polysilicon.
Shown in Figure 2 is: the relation of the average speed of existing conventional transverse crystallization and nickel deposition thickness.Under the unsaturated situation of nickel amount, the average speed of transverse crystallization is relevant with nickel deposition thickness, the catalytic metal nickel film that adopts electron beam evaporation method to obtain, and thickness is from 1nm-10nm, (45nm amorphous silicon membrane, 590 ℃ of annealing temperatures) transverse crystallization speed from 5 μ m/h to 25 μ m/h.That is to say that in surface area film crystallization process, it is inhomogeneous that the deposit thickness of nickel occurs, or produce in batches and parameter fluctuation occurs that problem will take place the uniformity of crystalline rate.We are desirable to be that the nickel overlay capacity in very large range changes as the state shown in the square mark curve, and crystalline rate does not change substantially.Like this, it is very wide that the process window of crystallization can become, and helps preparing large tracts of land, high-quality polycrystalline silicon substrate in enormous quantities.
[summary of the invention]: the objective of the invention is to solve and how to reduce the residual volume of metal in polysilicon membrane, to improve the film quality and the process repeatability of metal inducing crystallization polycrystalline silicon, thereby improve the problem of the polysilicon film device performance of the preparation of using, metal induced crystallization of amorphous silicon membrane method and the application of a kind of employing from slowly-releasing metal inducement source are provided.
The preparation method of self slow-release metal inducing crystallization polycrystalline silicon thin film material provided by the invention is to induce the source with the metal inducement thin-film material conduct that has from restriction and slow-release function, induces amorphous silicon membrane to become polysilicon membrane; With high-quality metal-induced lateral crystallization district is that channel region prepares polycrystalline SiTFT, and concrete steps are as follows:
The first, at first, deposition one deck silica or silicon nitride barrier on substrate, afterwards, deposition forms one deck amorphous silicon membrane in the above;
The second, deposition one deck silica or silicon nitride cover layer on above-mentioned amorphous silicon membrane, and on this cover layer, etch induction port;
Three, on above-mentioned cover layer, form layer of metal and induce film, this metal inducement film is contacted with amorphous silicon at the induction port place;
Four, then at the annealing temperature more than 450 ℃, promptly can be made into the self slow-release metal inducing crystallization polycrystalline silicon film.Below induction port, form the metal-induced crystallization district, do not having to form the metal-induced lateral crystallization district under the cover layer of induction port.
Describedly be meant that from slow-release function nickel exists with the oxide state, and be blended among the silica with lower content that therefore, the nickel that removes near amorphous silicon surfaces can be diffused among the silicon fiml quickly, the nickel of back then is discharged in the silicon fiml with speed very slowly.
Describedly be meant that from limitation function amorphous silicon and the metal induction layer nickle atom quantity and the thickness of mixture film at the interface is irrelevant, therefore, even its in uneven thickness and batch between thickness occur to change nucleus and to induce forward's formation state but be essentially identical.
Metal inducement thin-film material in above-mentioned the 3rd step is oxide and the silica mixed film of catalytic metal Ni, Au, Cu, Pd, Co, Al or Ag, and tenor (metallic atom number and metal, oxygen and silicon atom number and ratio) is 1% to 30%.
The metal inducement film is the film that plasma sputtering generates under the argon oxygen atmosphere, and thickness is 1nm to 30nm.
Induction port described in second step is a cycle superinduce mouth, and the physical dimension of each induction port is identical, and the induction port width is 2 μ m to 20 μ m, and spacing distance is identical, is 30 μ m to 300 μ m.
The microscler aperture of described induction port for adopting photoetching method to form, in this orifice area, the metal inducement film is more approaching than other positions and silicon fiml.
Described backing material is glass or Al paper tinsel flexible substrate material.
Amorphous silicon membrane described in the first step is the amorphous silicon membrane of PECVD, LPCVD, sputtering sedimentation, and thickness is 10nm to 10 μ m.
Cover layer described in second step is the cryogenic oxidation silicon or the silicon nitride film of PECVD, LPCVD or sputtering method, and thickness is 50nm to 500nm.
The application of the self slow-release metal inducing crystallization polycrystalline silicon thin film material of method for preparing is that channel region prepares polycrystalline SiTFT with the metal-induced lateral crystallization district.
With the metal-induced lateral crystallization district is the polycrystalline SiTFT of channel region, is metal-induced lateral crystallization polycrystalline silicon material or metal inducing crystallization polycrystalline silicon material between source-drain area.
The application of the self slow-release metal inducing crystallization polycrystalline silicon thin film material of above-mentioned each side method preparation is used to prepare polycrystalline silicon device and system, comprises flat-panel monitor active location substrate, polysilicon circuit or solar cell.
Advantage of the present invention and good effect:
The present invention adopts nisiloy mixture sputtering target, and the nickel oxide and the silica mixed film that form low nickel-content in the sputter of argon oxygen gas mixture ionic medium are induced the source as metal-induced lateral crystallization.It is after film thickness is greater than several atomic layers that this kind induced the characteristics of source film, increases thickness again, even tens of times increase does not all exert an influence to the speed of crystallization and the remaining nickel amount in the polysilicon, just works with the approaching interface of amorphous silicon.The thickness of nickle atom quantity and mixture film is irrelevant at the interface, therefore, even its in uneven thickness and batch between thickness occur changing, nucleus but is identical with the formation state of inducing the forward.In transverse crystallization process subsequently, the nickel of slowly-releasing constantly replenishes the required nickel of crystallization forward, crystallization is stablized carried out.Therefore, 15 inches areas with interior polysilicon membrane and preparation of devices in, have good consistency and controllability, enlarged preparation technology's window.Simultaneously, adopting this nickel can effectively control the nickel residual quantity from release method, prevent that the polymerization of nickel from forming high electric leakage to individual devices, and improve the stability of device, is one of key technology of large-scale production flat-panel monitor active location substrate.
[description of drawings]:
Fig. 1 is an existing conventional metal-induced lateral crystallization schematic diagram.
Fig. 2 is the relation of the average speed and the nickel deposition thickness of conventional transverse crystallization.
Fig. 3 adopts method of the present invention to prepare low nickel-content nickel oxide silica to induce the film schematic diagram.
Fig. 4 is the secondary ion spectrogram that low nickel-content nickel oxide silica that the present invention adopts is induced thin layer.
Fig. 5 be of the present invention in slowly-releasing metal-induced lateral crystallization process schematic diagram and polysilicon membrane the nickel distribution schematic diagram.
Fig. 6 is the speed that spreads in silicon fiml of nickel of the present invention and the relation of annealing time.
Fig. 7 is a 50nm amorphous silicon membrane of the same race, not isogeneous induction source category and thickness, and the polysilicon membrane under identical annealing conditions (590 ℃, nitrogen environment) after the crystallization is through the shape appearance figure after the TMAH corrosion.
Fig. 8 is the SIMS figure of remaining nickel amount in 7 three kinds of polysilicon membranes of corresponding diagram.
Fig. 9 adopts the speed of the inventive method transverse crystallization to concern with inducing film thickness.
Figure 10 is the Raman spectrum in metal-induced lateral crystallization interval in 7 three kinds of polysilicon membranes of corresponding diagram.
Figure 11 is the AFM figure in metal-induced lateral crystallization interval in 7 three kinds of polysilicon membranes of corresponding diagram.
Figure 12 adopts low nickel-content oxidation nisiloy of the present invention and adopts the nickel metal to do to induce transverse crystallization polysilicon that film forms as the characteristic of the polycrystalline SiTFT of raceway groove relatively.
Figure 13 is employing low nickel-content oxidation nisiloy of the present invention and adopts the nickel metal to do and induce the inhomogeneity comparison of the transverse crystallization polysilicon of film formation as the polycrystalline SiTFT of raceway groove.
Figure 14 is employing low nickel-content oxidation nisiloy of the present invention and adopts the nickel metal to do and induce the comparison of the transverse crystallization polysilicon of film formation as the stability of the polycrystalline SiTFT of raceway groove.
[embodiment]:
Details are as follows for accompanying drawing of the present invention:
As shown in the figure: what the present invention told about is to adopt nisiloy mixture sputtering target, form low nickel-content nickel oxide, silicon oxide film in the sputter of argon oxygen gas mixture ionic medium, or the nickel silicide of oxidation is embedded in sull in the silica is induced the source as metal-induced lateral crystallization method.Use this technology to have improved the uniformity and the stability that obtain large area polysilicon thin-film material and device obtaining effectively to have reduced the residual volume of nickel in the polysilicon under the suitable crystallization velocity prerequisite.
Shown in Figure 3 is: adopt sputtering method to obtain the basic process that low nickel-content nickel oxide silica is induced film.Magnetic controlled sputtering target 301 is suppressed with 1: 9 weight ratio by metallic nickel and high-purity silicon material and is formed.In the plasma atmosphere 302 that argon oxygen mixes, magnetic control target is bombarded, and oxidation generates low nickel-content nickel oxide silica and induce film 303, deposits to the sample surfaces for the treatment of crystallization.
Shown in Figure 4 is: this layer low nickel-content nickel oxide silica is induced the secondary ion spectrogram of film, wherein mainly comprises silicon, nickel and oxygen.
Shown in Figure 5 is: induce nickel distribution schematic diagram in slowly-releasing metal-induced lateral crystallization process schematic diagram that film realizes and the polysilicon membrane with above-mentioned low nickel-content nickel oxide silica.Shown in Fig. 5 (a) be: deposited barrier layer 102 on the glass substrate 101, deposition of amorphous silicon films 103 and cover layer 104 thereon, and in cover layer 104, form induction port.The low nickel-content nickel oxide silicon thin film 301 that sputter forms is in induction port, and the amorphous silicon layer below it contacts.Shown in Fig. 5 (b) be:, in annealing process subsequently, the amorphous silicon reaction of nickel source and its boundary, Si is oxidized and discharge Ni, nickel is diffused in the contiguous amorphous silicon of its periphery very soon, through finishing the gathering of nickel, formation is dispersed, the random low-density nucleus that distributes, grow up then thereupon, form the transverse crystallizing film 501 and the transverse crystallization leading peak 504 of discontinuous crystal grain, and it is continuous in low nickel-content nickel oxide silicon thin film 301, trace replenishes under the help of nickel 503, in annealing process, pushes ahead, finally finish metal and laterally induce the forming process of polysilicon 502, remove inducing layer and cover layer afterwards.Shown in Fig. 5 (c), this technology has limited the initial nickel amount of nucleating process effectively, and induces nickel silicide to induce medium NiSi by the nickel source according to forming
2Deficiency, by oxidation reaction, slowly-releasing Ni is provided atom.The Ni amount comes from the Ni that oxidation reaction discharges, rather than conventional metal Ni, has therefore obviously reduced the nickel content in the polysilicon membrane.
The speed that its nickel spreads in silicon fiml that shown in Figure 6 is and the relation of annealing time.In annealing initial a few minutes, induce the nickel of film surface to be diffused into apace to form in the amorphous silicon membrane and induce medium NiSi
2Carry out crystallization.After the reaction between the nickel source of at the interface amorphous silicon and nisiloy oxide was subjected to both mutual solubility restrictions, oxidation reaction was slowed down even is stopped, and nickel discharges in silicon thin film that the speed of nickel is very little to reach its saturation value until growth in time.Crystallization velocity rate of rise in time with and saturation value, can adjust with the nisiloy ratio in the sputtering target, can adopt single sputtering target, also can adopt double source to spatter altogether, independent interface nickel diffusing capacity and the nickel slow release speed adjusted.
Shown in Figure 7 is 50nm amorphous silicon membrane of the same race, not isogeneous induction source category and thickness, and the polysilicon membrane under identical annealing conditions (590 ℃, nitrogen environment) after the crystallization is through the shape appearance figure after the TMAH corrosion.Fig. 7 (a) adopts the thick low nickel-content nickel oxide of 2nm silicon thin film to do and induces film, and Fig. 7 (b) adopts the thick low nickel-content nickel oxide of 40nm silicon thin film to do and induces film, adopts the 5nm metal nickel film to do shown in Fig. 7 (c) and induces film.In the case, three kinds of samples have identical crystallization velocity 17 μ m/h.As we can see from the figure, in the induction port in (c) crystallization density apparently higher than the above two.
Shown in Figure 8 is: the SIMS of remaining nickel amount figure in 7 three kinds of polysilicon membranes of corresponding diagram.From figure, can obviously find out, (c) shown in nickel content in the polysilicon membrane, apparently higher than the above two.
Shown in Figure 9 is: the speed of transverse crystallization concerns with inducing film thickness.Because what initially play a major role in the crystallization process is the surface nickel amount of inducing film, the speed of transverse crystallization concerns not quite with inducing film thickness, therefore can obtain uniformity, repeated very high crystalline rate.
Shown in Figure 10 is: the Raman spectrum in metal-induced lateral crystallization interval in three kinds of polysilicon membranes of corresponding diagram 7 has identical halfwidth and curve distribution substantially.
Shown in Figure 11 is: the AFM in metal-induced lateral crystallization interval figure in three kinds of polysilicon membranes of corresponding diagram 7 has identical smooth surface substantially.
Figure 12 to 14 adopts low nickel-content oxidation nisiloy and adopts the nickel metal to do to induce the comparison as the characteristic of the polycrystalline SiTFT of raceway groove, uniformity, stability of transverse crystallization polysilicon that film forms.As seen: the performance of these three kinds of devices, spatially uniform and stability are close substantially.
The concrete preparation method of the present invention is:
Embodiment 1:
1), on eagle 2000 glass substrate 101, deposits the silicon dioxide of 300 nanometers as barrier layer 102 with LPCVD.Afterwards, form the amorphous silicon membrane 103 of 50 nanometer thickness in the above.Referring to Fig. 3 (a).
2), on 103 amorphous silicon membranes, deposit the silicon dioxide cover layer 104 of 100 nanometers then with LPCVD.Then, adopt a light shield process in 104 films, to form induction port.Induction port is a cycle superinduce mouth, and the physical dimension of each induction port is identical, and the induction port width is 2 μ m, spacing distance 30 μ m.
3), adopt above-mentioned said sputtering method, form 10% thick low nickel-content nickel oxide silica of 1nm and induce film 301, this film contacts with amorphous silicon at the induction port place.
4), then 590 ℃ of down annealing 2 hours, can form low nickel-content, high performance polysilicon membrane 502.
Embodiment 2:
1), on eagle 2000 glass substrate 101, deposits the silicon dioxide of 300 nanometers as barrier layer 102 with LPCVD.Afterwards, form the amorphous silicon membrane 103 of 10 nanometer thickness in the above.Referring to Fig. 3 (a).
2), on 103 amorphous silicon membranes, deposit the silicon dioxide cover layer 104 of 50 nanometers then with LPCVD.Then, adopt a light shield process to form induction port in 104 films, the induction port width is 10 μ m, spacing distance 100 μ m.
3), adopt above-mentioned said sputtering method, form 1% thick low nickel-content nickel oxide silica of 1nm and induce film 301, this film contacts with amorphous silicon at the induction port place.
4), then 590 ℃ of down annealing 4 hours, can form low nickel-content, high performance polysilicon membrane 502.
Embodiment 3:
1), on eagle 2000 glass substrate 101, deposits the silicon dioxide of 300 nanometers as barrier layer 102 with LPCVD.Afterwards, form the amorphous silicon membrane 103 of 10 micron thickness in the above.Referring to Fig. 3 (a).
2), on 103 amorphous silicon membranes, deposit the silicon dioxide cover layer 104 of 500 nanometers then with LPCVD.Then, adopt a light shield process to form induction port in 104 films, the induction port width is 20 μ m, spacing distance 300 μ m.
3), adopt above-mentioned said sputtering method, form 30% thick low nickel-content nickel oxide silica of 30nm and induce film 301, this film contacts with amorphous silicon at the induction port place.
4), then 550 ℃ of down annealing 100 hours, can form low nickel-content, high performance polysilicon membrane 502.
Claims (10)
1. the preparation method of a self slow-release metal inducing crystallization polycrystalline silicon thin film material is characterized in that this method induces the source with the metal inducement thin-film material conduct that has from restriction and slow-release function, induces amorphous silicon membrane to become polysilicon membrane, and concrete steps are as follows:
The first, at first, deposition one deck silica or silicon nitride barrier on substrate, afterwards, deposition forms one deck amorphous silicon membrane in the above;
The second, deposition one deck silica or silicon nitride cover layer on above-mentioned amorphous silicon membrane, and on this cover layer, etch induction port;
Three, on above-mentioned cover layer, form layer of metal and induce film, this metal inducement film is contacted with amorphous silicon at the induction port place;
Four, then behind annealing temperature more than 450 ℃, amorphous silicon is made the self slow-release metal inducing crystallization polycrystalline silicon film by metal inducing crystallization polycrystalline silicon; Below induction port, form the metal-induced crystallization district, do not having to form the metal-induced lateral crystallization district under the cover layer of induction port.
2. preparation method according to claim 1, it is characterized in that the metal inducement thin-film material in above-mentioned the 3rd step is oxide and the silica mixed film of catalytic metal Ni, Au, Cu, Pd, Co, Al or Ag, tenor be the metallic atom number with metal, oxygen and silicon atom number and ratio be 1% to 30%.
3. preparation method according to claim 2 is characterized in that the metal inducement film is the film that sputter generates under the argon oxygen gas mixture atmosphere, and thickness is 1nm to 30nm.
4. preparation method according to claim 1 is characterized in that the induction port described in second step is a cycle superinduce mouth, and the physical dimension of each induction port is identical, and the induction port width is 2 μ m to 20 μ m, and spacing distance is identical, is 30 μ m to 300 μ m.
5. preparation method according to claim 4 is characterized in that the strip aperture of described induction port for adopting photoetching method to form.
6. preparation method according to claim 1 is characterized in that described backing material is glass or Al paper tinsel flexible substrate material.
7. preparation method according to claim 1 is characterized in that the amorphous silicon membrane described in the first step is the amorphous silicon membrane of PECVD, LPCVD, sputtering sedimentation, and thickness is 10nm to 10 μ m; Cover layer described in second step is cryogenic oxidation silicon or the silicon nitride or the mixed film of the two of PECVD, LPCVD or sputtering sedimentation, and thickness is 50nm to 500nm.
8. the application of the self slow-release metal inducing crystallization polycrystalline silicon thin film material of each described method preparation in the claim 1 to 7 is characterized in that with the metal-induced lateral crystallization district being that channel region prepares polycrystalline SiTFT.
9. application according to claim 8 is characterized in that with the metal-induced lateral crystallization district being the polycrystalline SiTFT of channel region, the source leak because of between be metal-induced lateral crystallization polycrystalline silicon material or metal inducing crystallization polycrystalline silicon material.
10. the application of the self slow-release metal inducing crystallization polycrystalline silicon thin film material of each described method preparation in the claim 1 to 7, it is characterized in that, be used to prepare polycrystalline silicon device and system, comprise flat-panel monitor active location substrate, polysilicon circuit or solar cell.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101814438A (en) * | 2010-05-17 | 2010-08-25 | 广东中显科技有限公司 | Preparation method of thin film transistor based on induced longitudinal crystallization polycrystalline silicon |
| CN101819999A (en) * | 2010-05-17 | 2010-09-01 | 广东中显科技有限公司 | Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film |
| CN101853784A (en) * | 2010-05-17 | 2010-10-06 | 广东中显科技有限公司 | Method for transversely inducing and crystallizing low-temperature polycrystalline silicon film |
| CN102610499A (en) * | 2011-01-19 | 2012-07-25 | 广东中显科技有限公司 | Method for preparing multi-layer-film structure with polycrystalline silicon thin film |
| CN102810569A (en) * | 2011-06-01 | 2012-12-05 | 广东中显科技有限公司 | Polycrystalline silicon thin film transistor capable of driving in nickel and adjusting threshold voltage simultaneously |
| CN102881569A (en) * | 2011-07-11 | 2013-01-16 | 广东中显科技有限公司 | Preparation method of polycrystalline silicon thin film |
| WO2020177080A1 (en) * | 2019-03-05 | 2020-09-10 | Boe Technology Group Co., Ltd. | Method of forming crystallized semiconductor layer, method of fabricating thin film transistor, thin film transistor, and display apparatus |
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2007
- 2007-12-10 CN CNA2007101508425A patent/CN101179013A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814438A (en) * | 2010-05-17 | 2010-08-25 | 广东中显科技有限公司 | Preparation method of thin film transistor based on induced longitudinal crystallization polycrystalline silicon |
| CN101819999A (en) * | 2010-05-17 | 2010-09-01 | 广东中显科技有限公司 | Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film |
| CN101853784A (en) * | 2010-05-17 | 2010-10-06 | 广东中显科技有限公司 | Method for transversely inducing and crystallizing low-temperature polycrystalline silicon film |
| CN101853784B (en) * | 2010-05-17 | 2012-07-04 | 广东中显科技有限公司 | Method for transversely inducing and crystallizing low-temperature polycrystalline silicon film |
| CN102610499A (en) * | 2011-01-19 | 2012-07-25 | 广东中显科技有限公司 | Method for preparing multi-layer-film structure with polycrystalline silicon thin film |
| CN102810569A (en) * | 2011-06-01 | 2012-12-05 | 广东中显科技有限公司 | Polycrystalline silicon thin film transistor capable of driving in nickel and adjusting threshold voltage simultaneously |
| CN102881569A (en) * | 2011-07-11 | 2013-01-16 | 广东中显科技有限公司 | Preparation method of polycrystalline silicon thin film |
| WO2020177080A1 (en) * | 2019-03-05 | 2020-09-10 | Boe Technology Group Co., Ltd. | Method of forming crystallized semiconductor layer, method of fabricating thin film transistor, thin film transistor, and display apparatus |
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Application publication date: 20080514 |