CN101176205A - 用于射频晶体管输出匹配的方法和*** - Google Patents
用于射频晶体管输出匹配的方法和*** Download PDFInfo
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- CN101176205A CN101176205A CNA2006800169070A CN200680016907A CN101176205A CN 101176205 A CN101176205 A CN 101176205A CN A2006800169070 A CNA2006800169070 A CN A2006800169070A CN 200680016907 A CN200680016907 A CN 200680016907A CN 101176205 A CN101176205 A CN 101176205A
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Abstract
本发明描述了一种包括高频功率晶体管(102)和输出补偿电路(104)的高频功率器件(100),其中晶体管具有第一主电极、用作输出电极的第二主电极、和控制电极,输出补偿电路用于补偿晶体管(102)的寄生输出电容。输出补偿电路相对晶体管的物理位置使得晶体管输出电极和高频功率器件输出引线之间的键合线较短。因此输出补偿电路(104)物理上位于高频功率器件(100)的输入引线(108)和晶体管(102)之间。由从输出补偿电路(104)到晶体管(102)输出电极的键合线Lcomp引入的电感用作反馈信号。通过键合线Lcomp和连接到前置匹配电路(106)的键合线之间的互感耦合的选择,可以进一步优化高频功率器件的特性。
Description
技术领域
本发明涉及射频(RF)器件以及制造和操作射频器件的领域。更具体的,本发明涉及包括输出补偿电路的RF器件,补偿电路例如用于RF晶体管的补偿电路。
背景技术
射频(RF)晶体管,例如中频或高频功率晶体管,被广泛使用。这些器件典型地受到寄生输出电容Cout的影响,其工作带宽、功率效率和功率增益受限制。典型的是,后面的问题通过增加补偿元件来解决,补偿元件通常是补偿电感,或者内部并联电感,被称作INSHIN。典型的是,补偿元件通过解耦电容被连接在RF器件的输出和地之间。通过这种方式,通过寄生输出电容Cout在工作处频率获得并联谐振,使器件的输出阻抗增加,具有较小的虚部,这有助于在需要的频带获得器件输出对负载更好的匹配。图1中给出了这种输出补偿电路的典型设计,其中示出了RF器件10包括RF晶体管12例如RF功率晶体管、输出补偿电路14和前置匹配电路16。RF器件10还包括输入引线18和输出引线20。部件之间的不同互连通过键合线22设置。使用输出补偿电路的RF功率器件的优化已在例如专利申请WO 02/058149A1中描述,描述了包括两个电容的输出补偿级,从而能获得晶体管的双重内部后置匹配。其优点是输出补偿级与晶体管输出电极、输出引线间键合线之间的互感耦合几率减小,提供了更好的输出补偿。
但是在上述已有技术的***中,键合线长度很长,且将晶体管管芯输出连接到输出引线的键合线的等效寄生电感值不能降低到某特定值以下。该寄生电感对器件若干工作方面都有负面影响,例如工作带宽、功率效率、可靠性、可获增益和最大功率等。
发明内容
本发明的目的是给出一种带有输出补偿电路的电子RF器件,其具有改进的RF性能,例如在RF频率处具有改进的功率增益和功率效率。另一目的是给出制造该种电子RF器件的方法。
上述目的通过根据本发明的方法和器件完成。
本发明涉及一种电子RF器件,该电子RF器件包括输入引线和输出引线、晶体管和用来补偿晶体管寄生输出电容Cout的输出补偿电路,输出补偿电路物理上位于输入引线和晶体管之间。电子RF器件可以产生RF功率。“物理上位于”意思是“被置于”。“输出补偿电路物理上位于输入引线和晶体管之间”意思是“输出补偿电路的解耦电容被置于离电子RF输入引线比离晶体管输出电极更近,也就是距离更短”。将输出补偿电路的物理位置放在输入引线和晶体管之间,能够大大减少连接晶体管输出电极与电子RF器件输出引线的键合线的长度。这些键合线长度的减少可以获得更好的带宽,也就是例如使用该RF器件时更宽的带宽。键合线长度的减少也可以改善热功率耗散,从而形成更稳定的器件。该特定设计的另一优点是,相比已有技术中将输出补偿电路物理置于晶体管和器件输出引线之间的器件来说,能获得更高的功率效率。
晶体管可以包括第一主电极、作为输出电极的第二主电极、和控制电极,其中输出电极通过键合线Loutput连接到输出引线。在单极晶体管的情况下,第一主电极可以是源电极,第二主电极可以是漏电极,而控制电极可以是栅电极。晶体管可以是横向扩散金属氧化物半导体晶体管。因此,控制电极可以是横向扩散金属氧化物半导体晶体管的栅电极。包括建议的输出补偿电路配置的该RF器件如RF功率器件的优点是,能获得晶体管的功率比例与控制电极宽度(例如,栅电极宽度Wg)之间的更好特性以及更高的输出电极效率。另一优点是RF器件能基于标准元件,例如LDMOS晶体管。
输出补偿电路和晶体管可以置于单一管芯中。此优点是RF器件如RF功率器件可以具有紧凑***设计,使得封装中器件需要的空间较小。另一优点是器件可以更容易的制造,因为可以执行在单一管芯上的处理。需要的衬底尺寸也可以减小,从而成本降低。
输出补偿电路可包括电容Ccomp,电容Ccomp通过键合线Lcomp连接到晶体管的输出电极。该RF器件的优点是,可以使用标准的输出补偿电路,例如INSHIN电路。使用标准元件可以获得更低的制造成本。
由键合线Lcomp确定的电感可用作反馈信号源。这种反馈信号可以方便的用于优化RF器件的工作品质。
电子器件还可包括前置匹配电路,通过键合线Lpre match连接到控制电极。该RF器件的优点是可以设置前置匹配电路,使获得改进的输入阻抗范围,例如扩展的阻抗范围。
键合线Lcomp和键合线Lpre match之间的互感耦合可用作反馈机制的一部分。前置匹配电路可包括通过键合线Lpmi互连的多个元件,其中键合线Lcomp和键合线Lpmi之一之间的互感耦合可作为反馈机制的一部分。这样的优点是,能给出反馈机制,获得改进的信号处理。另外的优点是,能给出不同的反馈机制,允许对可选择的信号处理的特定特性进行优化。
电子器件还包括附加的变换电路。由于RF器件的紧凑化设计,可给出附加的变换电路来获得改进的信号处理。
本发明还涉及制造电子RF器件的方法,该方法包括设置衬底,设置电子RF器件的输入引线和输入引线、RF晶体管和输出补偿电路,在输出补偿电路和RF晶体管的输出电极之间以及在RF晶体管的输出电极和输出引线之间设置键合线,其中设置RF晶体管和输出补偿电路的操作包括:将输出补偿电路物理上置于输入引线和RF晶体管之间。输出补偿电路可物理置于输入引线和RF晶体管管芯之间。RF晶体管可以是RF功率晶体管。RF功率晶体管可以是任意种类的晶体管,例如金属氧化物半导体场效应晶体管(MOSFET)、横向扩散金属氧化物半导体晶体管(LDMOST)、双极结晶体管(BJT)、结型场效应晶体管(JFET)或者异质结双极晶体管(HBT)。电子RF器件可产生RF功率。该制造方法的优点是可使用标准元件。该方法的另一优点是可使用标准的半导体加工技术。
该方法还可包括设置连接到RF晶体管控制电极的前置匹配电路,并在键合线Lcomp和连接到前置匹配电路的键合线之间选择一定程度的互感耦合。这样的优点是该制造方法能容易的选择最优的反馈机制用于RF器件中,也即作为信号处理参数的函数来优化。
本发明的详细和优选方面将在所附独立和从属权利要求中阐述。从属权利要求中的特征可以和独立权利要求中的特征以及其他从属权利要求中的特征适当结合,并非仅仅如权利要求中所直观阐述的那样。
尽管本领域中器件在持续改进、变化和发展,但确信本概念代表了实质的创新性进步,包括脱离已有的惯例,从而给出一种更高效、稳定和可靠的器件。本发明的教导将允许改进的RF即中频或高频器件设计,例如RF功率器件。
附图说明
根据下面连同附图的具体描述,本发明的这些以及其它特性、特征和优点将变得显而易见,附图中作为例子,图示了本发明的原理。该描述仅作为例子给出,并没有限制本发明的范围。下面引用的参考图对应附图。
图1是阐释了现有技术RF器件的等效电子电路的示意性横截面表示及相应的符号电路图,如从现有技术中所知的,该RF器件包括物理上置于晶体管输出电极附近的输出补偿电路。
图2是阐释了RF器件第一设计选择的等效电子电路的示意性横截面表示及相应的符号电路图,根据本发明的第一实施例,该RF器件包括物理上置于晶体管输入侧的输出补偿电路。
图3是RF器件第二设计选择的示意性表示,根据本发明的第一实施例,该RF器件包括物理上置于晶体管输入侧的输出补偿电路。
图4和图5示出了示意性的横截面表示及相应的符号电路图,阐释了RF器件第三和第四设计选择的等效电子电路,根据本发明的第一实施例,该RF器件包括物理上置于晶体管输入侧的输出补偿电路。
图6示出了示意性的横截面表示及相应的符号电路图,阐释了RF器件的等效电子电路,根据本发明的第二实施例,其中所有的元件被集成到单个管芯上。
图7a示出了示意性的横截面表示及相应的符号电路图,阐释了RF器件的等效电子电路,根据本发明的第四实施例,该RF器件包括在输出侧附加的变换电路。
图7b示出了两级放大器件示例的示意性图解,根据本发明的第四实施例,该器件被布置于单个标准分立器件封装中。
图8a至图8c示出了40W LDMOST模型中获得的增益作为输出功率函数的仿真结果,该模型在根据本发明第一和第三实施例的RF器件中前置匹配电路和输出补偿电路之间具有不同程度的互感耦合。
图9a至图9c示出了40W LDMOST模型中获得的输入阻抗作为功率负载函数的仿真结果,该模型在根据本发明第一和第三实施例的RF器件中前置匹配电路和输出补偿电路之间具有不同程度的互感耦合。
图10a至图10c示出了40W LDMOST模型中获得的三阶互调失真作为输出功率函数的仿真结果,该模型在根据本发明第一和第三实施例的RF器件中前置匹配电路和输出补偿电路之间具有不同程度的互感耦合。
图11a至图11c示出了40W LDMOST模型中获得的大信号作为功率负载函数的仿真结果,该模型在根据本发明第一和第三实施例的RF器件中前置匹配电路和输出补偿电路之间具有不同程度的互感耦合。
图12a和图12b分别给出了RF器件的横截面视图和顶视图,根据本发明的第二实施例,该RF器件包括物理上置于前置匹配电路和晶体管之间的输出补偿电路。
图13、图14和图15给出了根据图12b的射频功率器件测量出的器件输出功率和功率效率,对比现有技术的RF功率器件测量的输出功率和功率效率,对应1dB的功率增益压缩(图13)、-30dBc的互调失真IMD3(图14)和-40dBc的互调失真IMD3(图15)。图中的直线表示理想的P_1dB比例(图13)和理想的Pout(图14,图15)。
图16示出了制造高频器件的方法的流程图,其中该器件具有的输出补偿电路物理上置于距输出引线比距射频晶体管更远的地方。
在不同的图中,相同的参考符号对应相同或类似的元件。
具体实施方式
本发明将根据具体的实施例且参考特定的图来进行描述,但是本发明并不仅仅局限于此,而是仅由权利要求来限定。权利要求中的任何参考符号并不应被解释成对范围的限制。描述的附图仅仅是示意性的且非限制性的。在图中,为了说明的目的,一些元件的尺寸可能被夸大而没有按比例绘制。本说明书和权利要求中存在术语“包括”的地方,并没有排除其它元件或步骤。当提及单数名词时使用不定冠词或定冠词也就是“a”或“an”、“the”的地方,除非有特别的说明否则也包括该名词的复数。
此外,说明书中和权利要求中的术语第一、第二、第三等用来在类似的元件之间进行区分,而并不必然的用于描述连续的或时间的顺序。要知道的是,这样使用的术语在适当的情况下是可互换的,并且这里描述的本发明的实施例能以不同于这里描述的或说明的顺序来操作。
此外,说明书中和权利要求中的术语顶部、底部、在……上和在……下等,用于描述的目的,而并不必然的用于描述相对位置。要知道的是,这样使用的术语在适当的情况下是可互换的,并且这里描述的本发明的实施例能以不同于这里描述的或说明的方位来操作。当明确的提及“物理位置”时,这些术语被有意用于描述相对位置,而提及的部件的相对位置不能因此改变。
本发明的实施例中,将描述一种射频器件,其中在衬底上设置了不同的电子元件。术语“衬底”可以包括可使用的任意底层材料,或者在其上可以形成器件、电路或者外延层的材料。可选的,这种“衬底”可包括半导体衬底例如掺杂硅、砷化镓(GaAs)、砷磷化镓(GaAsP)、磷化铟(InP)、锗(Ge)或者锗硅(SiGe)衬底。“衬底”除半导体衬底部分以外可包括例如绝缘层,如SiO2或者Si3N4层。于是,术语衬底还包括玻璃覆硅(silicon-on-glass)、蓝宝石覆硅(silicon-on-sapphire)衬底。因此术语“衬底”用于一般地定义位于感兴趣的层或者部分之下的层元件。同时,“衬底”可以是其它任意的在其上形成某一层的基础,例如形成玻璃或者金属层。
在第一实施例中,本发明涉及半导体器件,例如用于产生射频(RF)放大信号的射频器件。这样的半导体器件可以是RF功率器件。射频的典型定义是在9kHz到400GHz之间的频率。该器件于是可工作在9kHz到400GHz之间的频率范围中,例如工作在中频范围、高频范围、超高频范围、甚高频范围等等。关于电磁频谱的RF区域更详细的描述可以在例如Carr(Mc Graw-Hill companies,Inc)编著的“Secrets of RF Circuit Design”的1-2页中找到。有利的是,该器件可以在高于1.8GHz的频率处使用,例如18GHz,就像在无线通信中使用的那样。射频器件典型的在不同的应用中使用,例如用于广播和电视广播***和用于无线通信***的功率放大器。其它的应用包括基站传输站(BTS)、卫星地面站、移动电话或无绳电话、航空电子设备中使用的发射机、雷达等等。根据本发明,RF器件,例如RF功率器件对需要高效率和宽带宽的应用非常有用。图2中示出了根据本实施例的RF功率器件的一个例子。RF器件100(例如RF功率器件)包括RF晶体管102(例如RF功率晶体管)以及输出补偿电路104作为元件。通常RF器件100还可包括可选的前置匹配电路106,尽管本发明不局限于此。RF晶体管102和输出补偿电路104以及可选的前置匹配电路106全部以平面的方式排列在例如晶体管的金属凸缘、封装、热沉或者衬底的表面上。
RF器件100还包括输入引线108和输出引线110,形成器件的输入和输出,由此例如封装好的器件可通过这种方式或其它方式实现外部可连接,其它方式例如通过球状网格(ball grid)、垂片(tab)等。典型的设置在衬底上的RF晶体管102可以是任一种类的受寄生输出电容Cout影响的平面内RF晶体管。它可以是RF功率晶体管。RF晶体管102,例如RF功率晶体管,例如可以是场效应晶体管(FET),如横向扩散金属氧化物半导体晶体管(LDMOST),也可以是另一种晶体管如金属氧化物半导体晶体管(MOS)、假晶高电子迁移率晶体管(PHEMT)、双极结晶体管(BJT)或者异质结双极晶体管(HBT)。RF晶体管102典型的包括第一和第二主电极以及控制电极(在图2中没有示出),其中主电极中的一个,被称作第二主电极,用作输出电极。RF晶体管及其制造方法被本领域技术人员所熟知。对于单极晶体管的情况,第一主电极可以是源电极,第二主电极可以是漏电极,而控制电极可以是栅电极。用键合线Loutput将RF晶体管102的输出电极连接到RF器件100的输出引线。当存在前置匹配电路106时(通常是这样的情况),典型的通过利用键合线Linput与前置匹配电路106连接的输入引线,提供输入信号,前置匹配电路106典型的可以是低通L-C-L滤波结构。通过前置匹配电路106和RF晶体管102的控制电极如栅电极之间的键合线Lpre-match,进一步将信号传送至RF晶体管102,例如RF功率晶体管。可选的,输入引线可以直接连接到RF晶体管102的控制电极。设置用来补偿RF晶体管102寄生输出电容Cout(在图2中没有示出)的输出补偿电路104,可包括任何用于补偿RF晶体管102输出信号寄生输出电容Cout的元件。这样的输出补偿电路104可以INSHIN电路也就是内部并联电感来实现。输出补偿电路104,例如INSHIN电路,包括通过解耦电容Ccomp接地的补偿电感Lcomp。输出补偿电路104连接在RF晶体管的输出电极和地之间,从而以连接到RF晶体管输出电极的键合线来设置输出补偿电路104的补偿电感Lcomp。可选的,可设置另外的电感。典型的选择解耦电容Ccomp,使得在RF晶体管102如RF功率晶体管的工作频率处,与寄生输出电容Cout(没有在图2中示出)产生并联谐振。根据本发明的一个方面,输出补偿电路104例如INSHIN电路的解耦电容Ccomp,在物理上被置于RF晶体管102的输入侧,也被叫做RF晶体管的控制电极或者在单极晶体管的情况下叫做RF晶体管的栅电极,而不是被置于RF晶体管的输出侧,也被叫做RF晶体管的第二主电极或者输出电极,例如在单极晶体管的情况下被叫做漏电极。于是解耦电容Ccomp相对于RF晶体管102被置于离器件输入引线108更近的位置,也就是说相对于RF晶体管102,不是被置于离器件输出引线110更近的位置。换句话说,输出补偿电路104的解耦电容Ccomp物理位置离RF晶体管102的第一主电极和控制电极比离第二主电极更近。于是输出补偿电路104的解耦电容Ccomp物理上位于RF器件100的输入引线108和RF晶体管102例如RF晶体管102的第一主电极之间。换句话说,输出补偿电路102的电感Lcomp一端连接到RF晶体管102的输出引线或者漏极,而另一端通过解耦电容连接到地,其中解耦电容位于RF晶体管102的输入侧,在晶体管的控制电极如栅电极和RF器件100的输入引线108之间。于是RF晶体管102比输出补偿电路104的解耦电容Ccomp更靠近RF器件100的输出引线110。通过这种方式,在输出补偿电路104和RF晶体管102的输出电极或第二主电极之间的键合线Lcomp,在RF晶体管102的最大部分上延伸,于是相比于现有技术的器件,其典型的沿着关于RF晶体管102另外的方向延伸。后者在图3中示出。
如上所述,可设置可选的前置匹配电路106。这种前置匹配电路106典型的用键合线Linput与RF器件100的输入引线连接,并连接到RF晶体管例如RF功率晶体管的控制电极如栅电极。前置匹配电路106还可以由一个、两个或者更多的元件组成,由键合线Lpm1、Lpm2、…等相互连接。
通过对不同的元件选择特定的物理位置,RF晶体管102的输出电极可以用键合线Loutput连接到RF器件100的输出引线110,其中键合线Loutput远远短于现有技术包括输出补偿电路的***中的键合线。后者典型的依赖于引线相对于晶体管高度的高度。典型的,由于特定的设计规则,晶体管与输出补偿电路或者更具体的输出补偿电路的解耦电容之间的间距,以及输出补偿电路或者更具体的其解耦电容Ccomp与输出引线110之间的间距,要求至少为0.4mm。因此,考虑例如典型的输出补偿电路电容的宽度,如INSHIN电容宽度0.8mm,现有技术器件中在晶体管管芯102和输出引线110之间的总长度至少为1.6mm(=0.4mm+0.8mm+0.4mm),而对于根据本发明实施例的器件,该距离可以减少4倍到0.4mm。
使用短键合线Loutput的可能有很大的优点。它可以在RF器件中针对预定频率获得高功率效率。它改善了***获得的潜在工作频率带宽。后一改善还由于输出处寄生电感的减少。此外,由于降低大约3倍的输出键合线(例如漏极键合线)值,获得更宽的基带解耦带宽。例如多载波W-CDMA基带传输需要的典型带宽是60MHz的量级,根据本发明实施例的RF器件100能对此进行改善。后者也可以通过图8到图11中所示的仿真结果中看出,后面将对其更具体地讨论。此外,对于RF器件100获得更高的可靠性,因为更短的输出键合线Loutput给出更好的功率耗散和更低的键合线温度,从而形成更稳定的器件。更短键合线Loutput的另一个效果是由于更低功率耗散和更低功率损耗而改善的功率效率。支撑此的还有位于晶体管输出和输出引线110之间更短的返回RF电流路径,因为后者提供更小的损耗。由于封装内对空间更有效的利用特别是在晶体管管芯前面的空间,以及不同元件的物理位置,使得器件100的设计更紧凑。封装中所需的空间可以减少或用于引入更多的阻抗变换级(例如在LDMOST器件的情况下,其受到非常低的输入阻抗的影响),或者可以用于其它目的。另一优点是在输出补偿电路104的键合线Lcomp与RF晶体管输出电极、RF器件100的输出引线110间的键合线Loutput之间有更小的磁耦合。
图4和图5示出了本发明第一实施例的替代设计。RF器件200、250例如RF功率器件,包括和图2中所示RF器件100相同的元件,但是器件200、250的元件具有不同的物理位置。尽管在图2的RF器件100中,输出补偿电路104的键合线Lcomp和前置匹配电路的两个元件间的键合线Lpm1之间得到的互感耦合较弱,图4的RF器件200的设计使得输出补偿电路104的键合线Lcomp和将前置匹配电路106与晶体管102连接的键合线Lpre matching之间得到的互感耦合较弱。图5中所示的RF器件250给出的设计,使得给出键合线Lcomp和将前置匹配电路106与晶体管102连接的键合线Lpre matching之间较强的互感耦合。要注意的是上述器件仅仅作为例子示出,而本发明并不局限于此。不同元件的其它设计给出了晶体管输出电极和器件输出引线之间较短的键合线Loutput,这也包括在本申请的范围中。从不同的设计中可以看到,可以在输出补偿电路104的键合线和前置匹配电路的键合线之间得到不同种类的互感耦合。
在第二实施例中,本发明涉及一种电子器件,特别是RF器件,例如RF功率器件,如之前的实施例中所述,也包括RF晶体管102、输出补偿电路104和可选的前置匹配电路106作为元件,其中至少晶体管102和输出补偿电路104设置在相同的管芯上。在优选的实施例中,前置匹配电路106也被设置在和晶体管相同的管芯上。在图6中对后者进行阐释,示出了RF器件300例如RF功率器件,包括单个管芯310,其上放置了RF晶体管102、输出补偿电路104和可选的前置匹配电路106。后者允许紧凑设计,这是很有利的,因为它在封装中需要更小的空间并且允许生产更小的器件。在这些器件中仍可以使用标准元件。
在第三实施例中,本发明涉及一种器件,特别是根据前面任何一个实施例的RF器件,例如RF功率器件,其中根据本发明,基于RF器件的特定设计使用反馈机制。众所周知放大器的所有参数很强的依赖于可用的反馈机制,其中反馈机制总是在器件管芯内部存在,但是也可以被引入到器件管芯外部。典型的可由不同的方法引入反馈机制,例如正反馈机制、负反馈机制、串联和并联反馈。反馈机制对功率器件的影响依赖于器件内部的信号相位转移特性和工作模式,也就是器件是否以A类、AB类或C类工作。例如在AB类工作的情况下,器件总是表现出变化的幅度相关的幅度失真(AM-AM)、变化的幅度相关的相位失真(AM-PM)以及变化的输入阻抗,这些对大多数应用来说是不希望看到的。负反馈的引入一般地改善了作为功率函数和频率函数的器件参数的线性和稳定性。在现有技术器件中,对RF功率器件反馈机制的引入,例如外部反馈机制,典型的由于这些器件的特定设计以及其它的技术限制而受到限制。在根据本发明的器件中,可以基于输出补偿电路的电感和输入前置匹配电路中可用的电感之间的互感耦合,引入不同种类的反馈机制。信号可以通过互感耦合,以任意相位极性施加到前置匹配电路106的键合线即Lpre match或Lpm1、Lpm2……之一的电感上,从而给出反馈信号。于是通过输出补偿电路104的键合线和前置匹配电路106的键合线之一之间的互感耦合得到反馈信号。依赖本发明实施例中的特定设计,可以得到不同种类的互感耦合,这已在图2、图4和图5的例子中示出,分别阐释了键合线Lcomp和Lpm1之间的弱互感耦合、键合线Lcomp和Lpre match之间的弱互感耦合以及键合线Lcomp和Lpre match之间的强互感耦合。对典型使用的反馈机制的种类和应用点的选择将依赖于工作频率和需要改善的RF晶体管参数。这样的选择典型的基于RF晶体管参数的评价,例如作为功率函数的大信号增益和相位特性也就是幅度相关的幅度失真(AM-AM)和幅度相关的相位失真(AM-PM),以及作为频率函数的大信号增益和相位特性。这样的评价例如可以在RF器件的设计期间完成,例如也可以基于用典型的软件包如SPICE、高级设计仿真(ADS)、微波工作室(AWR)等对RF器件的操作进行的仿真。通过根据本发明的RF器件的设计,可以给出宽谱的正特性和负特性反馈,这提供了用器件输出和输入之间的反馈改善功率晶体管性能的机会。
作为例子,在表1中给出了LDMOS晶体管器件的输入匹配性能。该结构包括具有输入栅电阻Rg、栅一源电容Cg-s的RF晶体管、输出补偿电路和具有键合线Lpre-match、前置匹配电容Cp和第二键合线Linput的前置匹配电路,其中给出了Lpre-match和Linput的RF电流角度。依赖于设计,设置输出补偿电路如INSHIN电路的键合线,使得它们对Lpre-match、Lpm1或Linput的键合线具有强的互感耦合,且具有不同的电流幅度和角度,这又对器件性能造成不同的影响,形成正向或者负向环路反馈。器件不同元件的物理数值对前置匹配参数的影响如表1中所示。反馈的符号依赖于多种因素,如功率器件的正向传输增益和反向传输增益,使用的工艺和设计,其影响键合线之间的耦合强度。
前置匹配 | R(Ω) | Jx(jΩ) | 节点电流(A) | 角度(。) | |
元件 | 数值 | ||||
Rg | 0.4Ω | 0.400 | 0.000 | 1.581 | 0.0 |
Cg-s | 70.0pF | 0.400 | -1.137 | 1.581 | 0.0 |
Lpre match | 0.3nH | 0.400 | 2.633 | 1.581 | 0.0 |
Cp | 30.0pF | 17.549 | -1.797 | 0.239 | 87.2 |
Linput | 0.2nH | 17.549 | 0.716 | 0.239 | 87.2 |
表1
合适的选择可以允许例如使幅度相关的相位失真线性化,并且可以允许影响输入阻抗,例如依赖器件使用的工艺增加或者减少输入阻抗。通过根据本发明的具有不同种类互感耦合的LDMOST器件在2GHz处的一些示例性仿真结果对后者进行了阐释,如图8至图11中所示,并且将在下面对其作更详细的讨论。
在第四实施例中,本发明涉及一种功率器件,特别是根据前述任一实施例的RF器件,其中可以设置不同于第一前置匹配或第一输出补偿电路的附加的变换电路。后者由于根据本发明的RF器件的紧凑设计而能够得以实现,因为提供了空闲的空间。设置附加的前置匹配电路能够改善器件的工作带宽。图7a中,作为例子,示出了在RF晶体管102的输出侧具有附加的变换电路402的RF器件400。要注意的是,该附加的变换电路402是不同于输出补偿电路104的电路,其能够用传统的方式设计,例如低通L-C-L阻抗变换器。晶体管102的输出电极通过键合线Loutput1和附加的变换电路402连接,并且附加的变换电路402通过键合线Loutput2和输出引线110连接。可选地或另外地,也可以设置附加的放大装置。在图7b中,示出了布置在单一标准分立器件封装如SOT502A中的两级放大器件420的例子。因此使用新提出的补偿电路104,两级功率放大器件420可以布置在和用于一级功率器件相同的标准分立器件封装中,从而增加总增益。器件420除了包括前述实施例中描述的标准元件外,还包括电子驱动元件422如驱动晶体管,以及用于两级放大器件的其它标准元件,例如前置匹配电路424、426。
作为例子并为了进一步阐述本发明的优点,示出了40W LDMOST功率器件在2.14GHz的仿真和测量结果,其中该LDMOST功率器件中输出补偿电容物理上位于器件输入引线和晶体管之间。用于获得示出的测量和仿真结果的功率器件是AB类的放大器。然而,对本领域技术人员来说显然的是,本发明不局限于此,并且如上述实施例中描述的另外放置的输出补偿电路可以在不同类的放大器中有利的使用。例如在A类、C类、F类放大器、Doherty放大器等中可使用本发明。要清楚的是仿真和测量结果是为了阐述而给出的,本发明并不局限于此。
在第一个例子中,获得了带有前置匹配电路的40W横向双扩散金属氧化物半导体晶体管(LDMOST)的仿真结果,该晶体管可以包括不同的元件和输出补偿电路,从而根据上述实施例,输出补偿电容物理上位于器件的输入引线和晶体管之间。使用例如可从AgilentTechnology.公司获得的CAD软件Advanced Design System,对具有不同程度互感耦合的RF器件进行仿真。非线性谐波平衡仿真结果能够阐释输出补偿电路的键合线和前置匹配电路的键合线之间互感耦合的影响。在图8a、图9a、图10a和图11a中,给出器件的仿真结果,其中在输出补偿电路的键合线Lcomp和前置匹配电路的键合线之间没有互感耦合存在,也就是互感耦合常数K=0。在图8b、图9b、图10b和图11b中,示出了互感耦合K=0.5的器件的仿真结果,而在图8c、图9c、图10c和图11c中示出了在键合线Lpre-match的小部分和输出补偿电路的键合线Lcomp之间存在互感耦合K=-0.5的器件的仿真结果。图8a到图8c中的曲线图示出了增益的功率相关性,以dB表示,图9a到图9c示出了输入阻抗实部450和输入阻抗虚部452的功率相关性,而图10a到图10b示出了三阶互调失真的功率相关性,相对于载波水平以dB表示。由此使用的功率量是峰值包络功率,以瓦表示,也就是Wpep。此外,图11a至图11b示出作为输出功率函数的大信号增益。从这些曲线可以看到前置匹配电路和输出补偿电路的键合线之间的互感耦合对RF器件不同参数的影响。可以看到,为工作在示出结果的频率上,通过选择特定程度的互感耦合可增加功率增益。由此是要注意的是,键合线之间的耦合得到的影响强烈依赖于电路设计、工作频率和使用的RF器件。作为峰值包络功率负载Wpep函数的输入阻抗的比较,如图9a至图9c中所示,阐释了例如对于互感耦合常数K=0.5,输入阻抗的实部可以从2.2Ω增加到13Ω,而对于互感耦合常数K=-0.5,输入阻抗的实部可以从2.2Ω减少到0.6Ω。作为峰值包络功率负载函数的大信号的比较,如图11a至图11c中所示,阐释了对于互感耦合常数K=0.5,对幅度调制和相位调制(AM/PM)特性发生线性化影响。后者阐释了通过实现例如耦合常数K=0.5的互感耦合,能增加作为功率和输入阻抗函数的AM/PM特性的稳定性。不同互感耦合常数对增益和关于互调失真的线性的不同影响能够从图8a至图8c分别与图10a至图10c之间的比较看出。这些结果表示,通过选择适当的电感耦合系数和通过选择反馈信号应用点Lpm1或Lpre-match,以想要的方式使RF器件的不同参数,例如功率增益、输入阻抗和幅度调制以及相位调制特性变化如改善。
作为第二个例子,获得了RF器件((4×29)mm)的测量结果,如图12a中横截面和图12b中俯视图所示意性的示出。要注意的是给出结果仅仅为了阐释,而本发明不局限于示出的RF器件设计。RF器件500包括集成在单一管芯310上的RF晶体管102、前置匹配电路106和输出补偿电路104。前置匹配电路106在一侧通过键合线Linput(在本例中,线的数目为8)连接到RF器件500的输入引线108,而在另一侧连接到RF晶体管102的控制电极。RF晶体管102的第二主电极或者输出电极通过键合线Loutput(在本例中,线的数目为28)连接到RF器件500的输出引线110。RF晶体管102的输出电极用键合线Lcomp(在本例中,线的数目为12)另外连接到输出补偿电路。测量键合线Linput和Loutput相对于最近引线顶部的环路高度,最大为0.050mm。键合线Linput和Loutput连接到各自的引线,使得它们最大重叠0.2mm。测量键合线Lcomp相对于管芯的环路高度,最大为0.80mm±0.05mm。使用的线平均厚度是38μm。用来获得测量结果的RF器件特定设计的进一步细节如图12b中所示
具有根据上述本发明的设计的典型器件500称作器件A,没有输出补偿电路的参考器件称作器件B,输出补偿电路物理上位于RF晶体管的输出电极处的BLF4G20-130型RF器件(可从例如PhilipsSemiconductors公司商业采购)称作器件C,对这三种器件示出测试结果。图13、图14和图15对栅极宽度分别为77mm、120mm和180mm的三种不同尺寸的器件A、B、C,示出了2GHz频率处的消耗效率、增益压缩-1dB处的输出功率和在不同的双音(2-tone)三阶互调水平即IMD3=-30dBc和IMD4=-40dBc处的功率输出。图13中示出了针对1dB压缩增益的结果,图14中示出了针对相对于载波水平-30dB的双音互调失真IMD3的结果,而图15中示出了针对相对于载波水平-40dB的互调失真IMD4的结果。曲线中,参照用D表示的理想功率比例线,示出了输出功率(在左侧y轴上显示,并以瓦表示)与以mm表示的控制电极宽度之间的关系(以方块显示)。该理想功率比例线是基于对栅极宽度Wg=77nm的LDMOST器件的测量给出,它是最小的器件并且给出最可靠的参考性能,这也就意味着器件最大输出功率能力理想的应和器件的尺寸或栅极宽度Wg成正比,而器件的效率应相对器件的尺寸或栅极宽度Wg保持为常数。另外,曲线显示了器件A、B、C的效率(用圆环显示),显示在右侧y轴,并以百分比表示。在图13中,可以看到对于1dB压缩增益,根据本发明的器件A所具有的输出功率相对控制电极宽度的特性远优于采用现有技术类型输出补偿电路设计的器件C,假设作为控制电极宽度函数的理想线性功率比例能够被应用。使用相同的假设,如图14和图15中可以看出,获得的器件A的输出功率相对栅极宽度的特性在互调失真情况下也要好。不管是对于-1dB压缩增益还是对于互调失真,器件效率表明了根据本发明实施例的器件A具有***的、显著优越的效率。可以看到,相比于采用现有技术输出补偿电路设计的器件C,在-1dB压缩增益,输出电极效率有大于6%的相对改善,并且如图13中所示,在-1dB压缩具有完美的输出功率比例。从这些图中还可以进一步看出,晶体管输出处键合线的寄生电感已被减少了多于2倍。
具体体现本发明、用于实现RF器件目标的其它设置对本领域的技术人员来说是显而易见的。
在第二方面的第一实施例中,本发明涉及一种制造电子器件的方法,特别是根据本发明第一方面的任一实施例至少包括RF晶体管和输出补偿电路的RF放大电子器件。该制造方法因而能实现RF器件的制造,其中输出补偿电路物理上位于离晶体管的第一主电极和控制电极比离晶体管的第二主电极更近的位置,其中第二主电极用作晶体管的输出电极。后者能够获得具有本发明第一方面中描述的优点的器件,例如具有改善的效率以及可工作在更宽的频率范围中的器件。
在图16的流程图中阐释了制造本发明RF器件的方法600的不同步骤。在第一步骤602中,设置衬底。衬底的类型可以多种多样,如上所述。在第二步骤604中,RF器件中存在的不同元件被放入。后者包括放入RF晶体管和输出补偿电路。也可以可选的设置其它元件如前置匹配电路和附加的变换电路。在本发明第一方面的实施例中给出了这些元件更具体的描述。这些元件的设计众所周知并且制造这些元件的方法对本领域的技术人员来说是已知的。典型的是这些元件可以用传统的半导体加工技术设置在单一衬底上。可选的,也可以使用在不同衬底上例如不同类型的衬底上制作的单独部分。后者可以使用标准的组装技术来组合。于是另一种衬底例如低价的硅衬底可作为级间匹配结构来使用。
不同元件的物理位置使得输出补偿电路位于离控制电极如栅电极比离输出电极、漏电极更近的位置。根据元件的特定结构设计,执行不同元件的设置,其能获得具有高输出功率、高效率和宽工作频率带宽的器件。在下一步骤606中,设置键合线用于将一些特定元件互连。晶体管输出电极通过键合线Loutput连接到电子器件的输出引线。晶体管输出电极通过键合线Lcomp进一步连接到输出补偿电路。由于输出补偿电路关于晶体管输出电极的反向物理位置,键合线Lcomp在晶体管的大部分也就是接近整个晶体管上部延伸。还设置了其它的线,例如互连前置匹配电路和输入引线,也就是通过键合线Linput,以及互连前置匹配电路和晶体管控制电极,也就是通过键合线Lpre match。在可选的步骤608中,器件用传统的封装材料和传统的封装技术封装,从而获得通过输入引线和输出引线可连接的封装器件。
在本发明该方面的第二实施例中,执行了额外的步骤610,获得关于输出补偿电路的键合线Lcomp和连接到前置匹配电路的键合线之间的互感耦合的信息,获得的信息用于选择不同元件的特定结构设计以及用于设置键合线。选择特定的互感耦合因数能使RF器件的特定参数优化。该信息可基于使用公知仿真软件对根据本发明的高频器件的工作进行仿真而获得,其中该仿真软件能对研究的RF器件的参数进行评估。输出补偿电路和前置匹配电路之间的特定耦合可用作反馈***来进一步优化RF器件的操作。
应当理解,尽管这里已经对根据本发明的器件讨论了优选的实施例、特定的构造和配置以及材料,但是只要不偏离本发明的范围和精神,可对形式和细节作出各种变化和更改。
Claims (11)
1.一种电子RF器件(100、200、250、300、400),所述电子RF器件(100、200、250、300、400)包括输入引线(108)和输出引线(110)、晶体管(102)和用于补偿所述晶体管(102)的寄生输出电容Cout的输出补偿电路(104),
输出补偿电路(104)物理上位于所述输入引线(108)和所述晶体管(102)之间。
2.根据权利要求1所述的电子RF器件(100、200、250、300、400),所述晶体管(102)包括第一主电极、作为输出电极的第二主电极、和控制电极,所述控制电极是横向扩散金属氧化物半导体的栅电极,其中所述输出电极通过键合线Loutput连接到所述输出引线(110)。
3.根据权利要求1所述的电子RF器件(300),其中所述输出补偿电路(104)和所述晶体管(102)位于单个管芯(310)上。
4.根据权利要求2所述的电子RF器件(100、200、250、300、400),其中所述输出补偿电路(104)包括电容器Ccomp,所述电容器Ccomp通过键合线Lcomp连接到所述晶体管的输出电极。
5.根据权利要求4所述的电子RF器件(100、200、250、300、400),其中由所述键合线Lcomp确定的电感被用作反馈信号。
6.根据权利要求2所述的电子RF器件(100、200、250、300、400),其中所述电子RF器件(100、200、250、300、400)还包括前置匹配电路(106),通过键合线Lpre match连接到所述控制电极。
7.根据权利要求6所述的电子RF器件(200、250),其中键合线Lcomp和键合线Lpre match之间的互感耦合被用作反馈机制的一部分。
8.根据权利要求6所述的电子RF器件(100、300),所述前置匹配电路(106)包括通过键合线Lpmi互连的多个元件,其中键合线Lcomp和键合线Lpmi之一之间的互感耦合被用作反馈机制的一部分。
9.根据权利要求6所述的电子RF器件(400),其中所述电子RF器件(400)还包括附加的变换电路(402)。
10.一种电子RF器件(100、200、250、300、400)的制造方法,该方法包括:
设置衬底;
设置所述电子RF器件(100、200、250、300、400)的输入引线(108)和输出引线(110)、RF晶体管(102)和输出补偿电路(104);
在所述输出补偿电路(104)和所述RF晶体管(102)的输出电极之间以及在所述RF晶体管(102)的所述输出电极和所述输出引线(110)之间设置键合线,
其中设置RF晶体管和输出补偿电路(104)的操作包括:将所述输出补偿电路(104)物理上置于所述输入引线(108)和所述RF晶体管(102)之间。
11.根据权利要求10所述的制造方法,其中所述方法还包括:
设置连接到所述晶体管(102)的控制电极的前置匹配电路(106);
选择一定程度的键合线Lcomp和连接到所述前置匹配电路(106)的键合线之间的互感耦合。
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- 2006-03-14 JP JP2008501473A patent/JP2008533899A/ja not_active Withdrawn
- 2006-03-14 US US11/909,059 patent/US20080246547A1/en not_active Abandoned
- 2006-03-14 KR KR1020077023847A patent/KR20070116115A/ko not_active Application Discontinuation
- 2006-03-14 CN CNA2006800169070A patent/CN101176205A/zh active Pending
- 2006-03-14 EP EP06727666A patent/EP1864328A2/en not_active Withdrawn
- 2006-03-14 WO PCT/IB2006/050791 patent/WO2006097893A2/en active Application Filing
- 2006-03-15 TW TW095108820A patent/TW200703881A/zh unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109417364A (zh) * | 2016-07-01 | 2019-03-01 | 三菱电机株式会社 | 放大器 |
CN109668673A (zh) * | 2017-10-17 | 2019-04-23 | 英飞凌科技股份有限公司 | 压力传感器设备和压力传感器设备的制造方法 |
US11067466B2 (en) | 2017-10-17 | 2021-07-20 | Infineon Technologies Ag | Pressure sensor devices and methods for manufacturing pressure sensor devices |
Also Published As
Publication number | Publication date |
---|---|
WO2006097893A3 (en) | 2007-03-29 |
WO2006097893A2 (en) | 2006-09-21 |
EP1864328A2 (en) | 2007-12-12 |
TW200703881A (en) | 2007-01-16 |
KR20070116115A (ko) | 2007-12-06 |
JP2008533899A (ja) | 2008-08-21 |
US20080246547A1 (en) | 2008-10-09 |
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