CN101174645A - Image sensor and its forming method - Google Patents
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- CN101174645A CN101174645A CNA2007101671709A CN200710167170A CN101174645A CN 101174645 A CN101174645 A CN 101174645A CN A2007101671709 A CNA2007101671709 A CN A2007101671709A CN 200710167170 A CN200710167170 A CN 200710167170A CN 101174645 A CN101174645 A CN 101174645A
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Abstract
The present disclosure provides an image sensor device. The device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer. The invention can improve crosstalk phenomenon.
Description
Technical field
The present invention relates to a kind of semiconductor device and forming method thereof, and be particularly related to a kind of image sensering device and forming method thereof.
Background technology
In semiconductor technology, image sensor can be used to the light that sensing is projected to the semiconductor-based end.(complementary metal oxide semiconductor, CMOS) image sensering device has been widely used in each side to CMOS (Complementary Metal Oxide Semiconductor), for example digital camera (digital still camera).These devices utilize active pixel (pixel) array (array) or image sensing unit (cell) to accept light energy to be numerical data with image transitions, and active pixel array or image sensing unit can comprise optical diode or MOS transistor.Yet image sensering device has faced the problem of cross-talk (electricalcross-talk).
Usually the high image quality, low noise (noise) and the good optical property that need low cross-talk as optical application such as digital cameras.Image sensering device with optical diode and MOS transistor can be used in this type of optical application.Optical diode and MOS transistor are formed in the P-silicon semiconductor layer, and the P-silicon semiconductor layer is formed on P+ silicon base top, and incident light produces electron-hole pair in the P-silicon layer.To diffuse to contiguous diode at the electronics that exhausts generation outside (depletion) district, therefore produce cross-talk.Cross-talk can reduce spatial resolution (spatial resolution) and photosensitivity, and causes bad color separation (color separation).The signal of telecommunication that with the image sensing element is the light of target may be disseminated to other image sensing elements, and this phenomenon also causes cross-talk.
Therefore, need a kind of image sensering device and/or its substrate of improvement at present.
Summary of the invention
In view of this, one of purpose of the present invention is to provide a kind of image sensering device that can improve the cross-talk phenomenon.
The invention provides a kind of image sensering device, comprising: the semiconductor-based end,, it has the first type impurity; Semi-conductor layer, it has the second type impurity, and the described second type impurity is different from the described first type impurity, and described semiconductor layer is above the described semiconductor-based end; And image sensor, in described semiconductor layer.
According to image sensering device of the present invention, the thickness of wherein said semiconductor layer is approximately between 1 to 20 μ m.
According to image sensering device of the present invention, wherein said image sensor comprises: first doped region, and it has the described first type impurity, and described first doped region is in described semiconductor layer; And second doped region, it has the described second type impurity, and described second doped region is in described semiconductor layer and above described first doped region.
According to image sensering device of the present invention, also comprise a plurality of microelectronic unit in described semiconductor layer, wherein said a plurality of microelectronic unit are selected from the group that is followed transistor, row selecting transistor, nmos pass transistor, PMOS transistor and combination thereof by conduction gridistor, reset gate transistor, source electrode and form.
According to image sensering device of the present invention, the resistivity of wherein said semiconductor layer approximately between 1 to 50ohm-cm.
According to image sensering device of the present invention, the doping content of wherein said semiconductor layer is approximately between 10
14To 10
16Cm
-3
According to image sensering device of the present invention, the resistivity at the wherein said semiconductor-based end approximately between 0.002 to 50ohm-cm.
According to image sensering device of the present invention, the doping content at the wherein said semiconductor-based end is approximately between 10
14To 10
20Cm
-3
The present invention provides a kind of image sensering device again, comprising: the semiconductor-based end,, it has the first type impurity, and the described semiconductor-based end can operate under bias voltage; Semiconductor layer, it has the second type impurity, and the described second type impurity is different from the described first type impurity, and described semiconductor layer is above the described semiconductor-based end; And optical diode, in described semiconductor layer, wherein said optical diode comprises first doped region and second doped region, and described first doped region has the described first type impurity, and described second doped region has the described second type impurity and above described first doped region.
According to image sensering device of the present invention, wherein said first doped region is N type district, and described second doped region is a P type fixed bed.
The present invention provides a kind of formation method of image sensering device again, comprising: the semiconductor-based end is provided, and it has the first type impurity; Form semiconductor layer above the described semiconductor-based end, described semiconductor layer has the second type impurity, and the wherein said second type impurity is different from the described first type impurity; Form a plurality of well regions and in described a plurality of well regions, form a plurality of microelectronic unit; And in described semiconductor layer, form image sensor.
Formation method according to image sensering device of the present invention also comprises: form multi-layer internal connection line on described semiconductor layer; Above described multi-layer internal connection line, form colored filter, and described colored filter is aimed at vertically with described image sensor; And form lenticule above described colored filter, and described lenticule is vertically aimed at described image sensor.
According to the formation method of image sensering device of the present invention, the thickness of wherein said semiconductor layer is approximately between 2 to 8 μ m, and it utilizes epitaxial growth to form, and described semiconductor layer has p type impurity.
According to the formation method of image sensering device of the present invention, the formation method of described semiconductor layer comprises the epitaxial growth that utilizes silane gas to carry out, and wherein silane gas pressure is approximately between 40 to 760Torr, and the growth temperature is about 1000 ℃.
According to the formation method of image sensering device of the present invention, the formation method of described semiconductor layer comprises that utilizing the described second type impurity to carry out ion injects.
Description of drawings
Fig. 1 to Fig. 7 illustrates image sensering device of the embodiment of the invention and forming method thereof.
Wherein, description of reference numerals is as follows:
100～semiconductor device;
110～semiconductor-based the end;
115～semiconductor layer;
120～isolate unit to count;
125～sacrifice layer;
130～photoresist;
135,140～well region;
145a, 145b, 145c, 145d, 145e, 145f, 145g, 145h～transistor;
150～optical diode;
150a, 150b～doped region;
160a, 160b, 160c, 160d～metal level;
160e, 160f～connector;
165～dielectric layer;
170～colored filter;
175～lenticule;
180～opening.
Embodiment
Below will notion of the present invention be described by embodiment, the purposes that each embodiment only illustrates as an example is not in order to limit scope of the present invention.In graphic or description, similar or identical part will be used similar or identical label.In graphic, the shape of element or thickness can enlarge or dwindle.Not shown or describe element, form that can be known to those skilled in the art.In addition, when narration one deck was positioned at substrate or another layer and goes up, this layer can be located immediately on substrate or another layer, or intermediary layer can also be arranged therebetween.
Image sensering device of the embodiment of the invention and forming method thereof will follow Fig. 1 to Fig. 7 to be described as follows.See also Fig. 1, semiconductor device 100 has the semiconductor-based end 110, and the semiconductor-based end 110 has the first type impurity.The preferably, the semiconductor-based end 110 is a silicon.The semiconductor-based end 110, can comprise other elemental semiconductors, as germanium.Perhaps, the semiconductor-based end 110, can comprise other compound semiconductors, as carborundum, GaAs, indium arsenide or indium phosphide.In an example, the first type impurity is N type impurity.Can by to semiconductor substrate 110 Doping Phosphorus or arsenic to form the semiconductor-based end 110 of N type.The doping content at the semiconductor-based end 110 and resistivity can be passed through suitable adjustment, cause the influence that optical diode is connect face (junction) profile (profile) with minimizing because of diffusion inside (bulkdiffusion).Substrate 110 can be heavy doping or light dope.In an example, the doping content at the semiconductor-based end 110 is approximately between 10
14To 10
20Cm
-3The resistivity at the semiconductor-based end 110 approximately between 0.002 to 50ohm-em.Can mix to semiconductor substrate 110 by ion injection or diffusion technology.
Please refer to Fig. 2, form semiconductor layer 115 above the semiconductor-based end 110, semiconductor layer 115 has the second type impurity, and wherein the first type impurity is different from the second type impurity.For example, be the N type when the semiconductor-based end 110, then semiconductor layer 115 is the P type.Can by to semiconductor layer 115 doped with boron or boron fluoride to form the semiconductor layer 115 of P type.If the semiconductor-based end 110 is silicon base, then semiconductor layer 115 also can be a silicon layer.The thickness of semiconductor layer 115 and doping content can be passed through suitable adjustment, with obtained performance preferable image sensing apparatus.For example, the thickness of semiconductor layer 115 is approximately between 1 to 20 μ m; The preferably, the thickness of semiconductor layer 115 is approximately between 1 to 10 μ m; Better person, the thickness of semiconductor layer 115 is approximately between 2 to 8 μ m.Yet too thin semiconductor layer may reduce the cmos image sensor that is positioned at wherein or the optical property of other sensors.In an example, the resistivity of semiconductor layer 115 is approximately between 1 to 50ohm-cm, and is good between 8 to 12ohm-cm approximately.The doping content of semiconductor layer 115 is approximately between 10
14To 10
16Cm
-3Can be on silicon base or other semi-conducting materials extension (epitaxy) growth one deck silicon metal, use forming semiconductor layer 115.For example, can utilize silane (silane, SiH
4) gas carries out the epitaxial growth of silicon layer, wherein the temperature of silane gas is about 1000 ℃, gas pressure approximately between 40 to 760Torr.Also can utilize other gases to carry out the epitaxial growth of silicon layer, and the pressure that can adjust gas is to import impurity.
In another embodiment, can carry out ion to semiconductor substrate 110 and inject, can form the semiconductor layer that has opposite impurity with the semiconductor-based end 110 by dosage and the energy of adjusting the ion injection to form semiconductor layer 115.
Because semiconductor layer 115 has opposite impurity with the semiconductor-based end 110, therefore reduced the situation of minority diffusion.Moreover the semiconductor-based end, is designed to and can operates under bias voltage.For example, by the protective ring in substrate (guard ring) N type semiconductor substrate 110 is applied positive voltage (as V
Dd), bias voltage exhausts generation in (depletion) district, and depletion region has electric field between substrate of N type and p type semiconductor layer.Electric field will attract electronics to be moved downward to substrate, and avoid electrons spread to contiguous image sensor (as optical diode).Cross-talk can effectively reduce thus.
Please refer to Fig. 3, in semiconductor layer 115, form a plurality of isolated components 120, from (STI) district, use definition and make image sensor and transistorized each zone as shallow trench isolation.In an example, image sensor comprises optical diode.Can form shallow channel isolation area 120 by suitable technology, for example, the technology in STI district comprises: utilize the photoetching technique patterned semiconductor layer; With plasma etching method etching semiconductor layer to form groove; In groove, insert dielectric material by chemical vapour deposition technique (CVD) as silica.The CVD technology here can be high density plasma chemical vapor deposition method (HDPCVD), and so, the STI district has preferable surface.Above semiconductor layer 115, form sacrifice layer 125 and be beneficial to subsequent technique.The thickness of sacrifice layer 125 is approximately greater than 100 , and it can comprise grow up silicon oxide layer on silicon semiconductor layer of heat.
Please refer to Fig. 4, in the semiconductor layer of P type, form P well region (p-well) 135.The formation method of P well region can be included in sacrifice layer 125 tops and form patterning photoresist 130, then, semiconductor layer 115 is carried out ion implantation technology, and ion injects the sacrifice layer 125 that can expose by photoresist 130 openings.The ion here injects and can utilize boron as impurity, injects energy between 100 to 200KeV, and implantation dosage is approximately between 10
13To 3 * 10
13Cm
-2In an example, the degree of depth of P well region 135 is approximately between 0.5 to 1 μ m.
Please refer to Fig. 5, after utilizing wet type to divest method (wet stripping) or plasma ashing method (plasmaashing) to remove patterning photoresist 130, in P well region 135, form transistor 145.Transistor 145 can comprise that conduction gridistor (transfer gate transistor), reset gate transistor (reset gate transistor), source electrode follow transistor (source follower transistor), row selecting transistor (row select transistor); Transistor 145 also can comprise other MOS transistor, for example N type MOS transistor (NMOS).The nmos pass transistor here can be operated under different voltage, and for example, the operating voltage of some nmos pass transistors is 3.3V, and the operating voltage of other nmos pass transistors is 1.8V.Each transistor can comprise source electrode, drain electrode and grid, and wherein grid comprises gate dielectric and gate electrode.In semiconductor layer 115, form N well region 140 in abutting connection with P well region 135.In N well region 140, can form P type MOS (PMOS) transistor.Sacrifice layer 125 can be removed in the process of NMOS and the formation of PMOS transistor.In an example, transistor 145a is the nmos pass transistor of 3.3V, transistor 145b is a row selecting transistor, transistor 145c is that source electrode is followed transistor, transistor 145d is the reset gate transistor, and transistor 145e is the conduction gridistor, and transistor 145f is the nmos pass transistor of 1.8V, 145g is the PMOS transistor of 1.8V, and 145h is the PMOS transistor of 3.3V.
Please refer to Fig. 6, in p type semiconductor layer 115, form N type optical diode 150.Utilize ion implantation inject as the N type impurity of phosphorus or arsenic to semiconductor layer, with formation N type doped region 150a.With 0.18 micron technology is example, injects energy approximately between 50 to 500KeV, and implantation dosage is approximately between 10
12To 10
13Cm
-2In an example, the degree of depth of N type optical diode 150 is approximately between 0.05 to 0.1 μ m.Form P type doped region 150b in optical diode 150, can utilize the p type impurity as boron or boron fluoride to form P type doped region 150b, P type doped region 150b also is called P type fixed bed (pinnedlayer).Fixed bed helps to reach good optical performance, for example low-leakage current.The injection energy of fixed bed 150b is approximately between 10 to 100KeV, and implantation dosage is approximately between 10
13To 10
14Cm
-2The thickness of fixed bed 150b is approximately between 0.02 to 0.05 μ m.In another embodiment, optical diode 150 can be formed on the 2nd P well region, and the doping content of the 2nd P well region is less than P well region 135, and the 2nd P well region and P well region 135 form respectively.
Please refer to Fig. 7, above semiconductor layer 115, form multiple layer inner connection line (multi-layerinterconnect, MLI) dielectric layer 165 of structure and separation MLI structure.In an example, the MLI structure can comprise metal level one 160a, metal level two 160b, metal level three 160c and metal layer at top 160d.The MLI structure more can comprise contact plunger 160e, and contact plunger 160e can be used to connect various elements and metal level one 160a on the semiconductor layer.The MLI structure more can comprise interlayer hole connector 160f, and interlayer hole connector 160f can be used to connect each metal level.Dielectric layer 165 ties up in the MLI structure, and dielectric layer 165 can be multilayer, for example interlayer dielectric layer (inter-level dielectric) and dielectric layer between metal layers (inter-metal dielectric).
The multiple layer inner connection line can comprise electric conducting material, for example aluminium, aluminium/silicon/copper alloy, titanium, titanium nitride, tungsten, polysilicon, metal silicide (silicide) or its combination (can be described as the aluminium intraconnections).The formation method of aluminium intraconnections comprises physical vaporous deposition, chemical vapour deposition technique or its combination as sputtering method.Other technologies that are used for forming the aluminium intraconnections comprise photoetching and etch process, and patterning conductive material is to form vertical (as interlayer connector or contact plunger) and level (lead) intraconnections thus.Can utilize technology to form metal silicide as annealing process etc.In another embodiment, as the multiple layer inner connection line, it comprises copper, copper alloy, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, polysilicon, metal silicide or its combination with copper interconnects.The formation method of copper multiple layer inner connection line comprises CVD, sputtering method (sputtering), galvanoplastic or other usability methods.Metal silicide in the multiple layer inner connection line can comprise nickle silicide, cobalt silicide, tungsten silicide, tantalum silicide, titanium silicide, platinum silicide, erbium silicon, palladium silicon or its combination.
Form colored filter (color filter) 170 and lenticule (microlens) 175 above the semiconductor-based end 110, lenticule 175 can be distinguished gathered light and filter light with colored filter 170, and with photoconduction to optical diode 150.Opening 180 can be further formed with exposed tops metal level 160d, follow-uply connection gasket (bonding pad) can be in opening 180, formed.
Also have other embodiment that image sensering device 100 and forming method thereof can be described.For example, the above embodiments comprise well region, transistor and the optical diode of N type semiconductor substrate, p type semiconductor layer and certain specific doping type and profile.In other embodiments, can utilize P type semiconductor substrate and n type semiconductor layer, like this, the doping type of other parts also must be on the contrary to keep the normal function of element.And in the case, substrate need be bestowed back bias voltage to produce depletion region.
The described image sensor 150 of embodiment can comprise other elements or the diffusion region in charge coupled cell (CCD), active sensor, passive sensor and/or the substrate 110.Sensor 150 can be the image sensing element of known and/or future development.Semiconductor device 100 can comprise a plurality of sensing elements with array or other structural arrangement.These sensing elements can be various types of sensors, and for example, some sensing elements are the cmos image sensor, and other sensing elements are passive sensor.Sensing element can be color image sensing device and/or monochrome image sensor.
In above-mentioned structure and method, the irradiates light that semiconductor device 100 is accepted is not limited to visible light, and it can be infrared light (IR), ultraviolet light (UV) or other radiation laser beams.Sensing element and transistor can be through the radiant light of suitable design with usable reflection and/or absorption acceptance.Semiconductor device 100 can comprise the protective layer that places the multi-layer internal connection line top.
Embodiments of the invention provide a kind of image sensering device, and this image sensering device comprises the semiconductor-based end, and it has the first type impurity.Form semiconductor layer above the semiconductor-based end, semiconductor layer has the second type impurity, and wherein the first type impurity is different from the second type impurity.In semiconductor layer, form image sensor.
In this image sensering device, the thickness of semiconductor layer is approximately between 1 to 20 μ m; The preferably, the thickness of semiconductor layer is approximately between 1 to 10 μ m; Better person, the thickness of semiconductor layer is approximately between 2 to 8 μ m.Image sensor comprises first doped region and second doped region.First doped region, the first type impurity that mixes, it is formed in the semiconductor layer.Second doped region, the second type impurity that mixes, it is formed in the semiconductor layer and above first doped region.Image sensering device also comprises the microelectronic unit in the semiconductor layer, and microelectronic unit is selected from the group that is followed transistor, row selecting transistor, nmos pass transistor, PMOS transistor and combination thereof by conduction gridistor, reset gate transistor, source electrode and form.Each microelectronic unit can be isolated mutually from (STI) element by shallow trench isolation.The semiconductor-based end, can operate under bias voltage to avoid cross-talk to take place.The formation method of semiconductor layer is from being injected by epitaxial growth, ion and making up the group that is formed and select.The resistivity of semiconductor layer approximately between 1 to 50ohm-cm.The doping content of semiconductor layer is approximately between 10
14To 10
16Cm
-3The resistivity at the semiconductor-based end approximately between 0.002 to 50ohm-cm.The doping content at the semiconductor-based end is approximately between 10
14To 10
20Cm
-3In this image sensering device, one of them is the N type for the first type impurity and the second type impurity, and another is the P type.This image sensering device also comprises colored filter, and colored filter is on the semiconductor layer and on image sensor, and colored filter is roughly vertically aimed at image sensor.This image sensering device also comprises lenticule, and lenticule is on the semiconductor layer and on colored filter, and lenticule is roughly vertically aimed at image sensor.
Another embodiment of the present invention provides a kind of image sensering device, and this image sensering device comprises the semiconductor-based end, and it has the first type impurity, and the semiconductor-based end can operate under bias voltage.Form semiconductor layer above the semiconductor-based end, semiconductor layer has the second type impurity, and wherein the first type impurity is different from the second type impurity.Form optical diode in semiconductor layer, wherein optical diode comprises first doped region and second doped region.First doped region has the first type impurity.Second doped region has the second type impurity, and it is formed on first doped region top.
In this image sensering device, but light dope of the semiconductor-based end first type impurity; Perhaps, but heavy doping of the semiconductor-based end first type impurity.First doped region can be N type district, second doped region can be P type fixed bed.The thickness of semiconductor layer is approximately between 2 to 8 μ m, and the degree of depth of optical diode is approximately between 0.05 to 0.1 μ m, and the degree of depth of second doped region is approximately between 0.02 to 0.05 μ m.
Another embodiment of the present invention provides a kind of formation method of image sensering device, and the method comprises provides the semiconductor-based end, and it has the first type impurity.Form semiconductor layer above the semiconductor-based end, semiconductor layer has the second type impurity, and wherein the first type impurity is different from the second type impurity.Form well region and in well region, form microelectronic unit.In semiconductor layer, form image sensor.
The formation method of image sensering device also is included in and forms multiple layer inner connection line (MLI) structure on the semiconductor layer.Form colored filter at the MLI superstructure, and colored filter is aimed at vertically with image sensor.Above colored filter, form lenticule, and lenticule is aimed at vertically with image sensor.The formation method of semiconductor layer comprises that epitaxial growth has the epitaxial semiconductor layer of the second type impurity.The formation method of semiconductor layer comprises utilizes silane (silane, SiH
4) epitaxial growth that gas carries out, the temperature of wherein growing up is about 1000 ℃, gas pressure approximately between 40 to 760Torr.The formation method of semiconductor layer comprises that utilizing the second type impurity to carry out ion injects.The thickness of semiconductor layer is approximately between 1 to 20 μ m.The formation method of image sensor is included in and forms optical diode in the silicon layer.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little variation and modification, so protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (15)
1. image sensering device comprises:
The semiconductor-based end,, it has the first type impurity;
Semiconductor layer, it has the second type impurity, and the described second type impurity is different from the described first type impurity, and described semiconductor layer is above the described semiconductor-based end; And
Image sensor is in described semiconductor layer.
2. image sensering device as claimed in claim 1, the thickness of wherein said semiconductor layer are approximately between 1 to 20 μ m.
3. image sensering device as claimed in claim 1, wherein said image sensor comprises:
First doped region, it has the described first type impurity, and described first doped region is in described semiconductor layer; And
Second doped region, it has the described second type impurity, and described second doped region is in described semiconductor layer and above described first doped region.
4. image sensering device as claimed in claim 1, also comprise: a plurality of microelectronic unit, in described semiconductor layer, wherein said a plurality of microelectronic unit are selected from the group that is followed transistor, row selecting transistor, nmos pass transistor, PMOS transistor and combination thereof by conduction gridistor, reset gate transistor, source electrode and form.
5. image sensering device as claimed in claim 1, the resistivity of wherein said semiconductor layer approximately between 1 to 50ohm-cm.
6. image sensering device as claimed in claim 1, the doping content of wherein said semiconductor layer is approximately between 10
14To 10
16Cm
-3
7. image sensering device as claimed in claim 1, the resistivity at the wherein said semiconductor-based end approximately between 0.002 to 50ohm-cm.
8. image sensering device as claimed in claim 1, the doping content at the wherein said semiconductor-based end is approximately between 10
14To 10
20Cm
-3
9. image sensering device comprises:
The semiconductor-based end,, it has the first type impurity, and the described semiconductor-based end can operate under bias voltage;
Semiconductor layer, it has the second type impurity, and the described second type impurity is different from the described first type impurity, and described semiconductor layer is above the described semiconductor-based end; And
Optical diode, in described semiconductor layer, wherein said optical diode comprises first doped region and second doped region, and described first doped region has the described first type impurity, and described second doped region has the described second type impurity and above described first doped region.
10. image sensering device as claimed in claim 9, wherein said first doped region are N type districts, and described second doped region is a P type fixed bed.
11. the formation method of an image sensering device comprises:
The semiconductor-based end is provided, and it has the first type impurity;
Form semiconductor layer above the described semiconductor-based end, described semiconductor layer has the second type impurity, and the wherein said second type impurity is different from the described first type impurity;
Form a plurality of well regions and in described a plurality of well regions, form a plurality of microelectronic unit; And
In described semiconductor layer, form image sensor.
12. the formation method of image sensering device as claimed in claim 11 also comprises:
On described semiconductor layer, form multi-layer internal connection line;
Above described multi-layer internal connection line, form colored filter, and described colored filter is aimed at vertically with described image sensor; And
Above described colored filter, form lenticule, and described lenticule is aimed at vertically with described image sensor.
13. the formation method of image sensering device as claimed in claim 11, the thickness of wherein said semiconductor layer be approximately between 2 to 8 μ m, and it utilizes epitaxial growth to form, described semiconductor layer has p type impurity.
14. the formation method of image sensering device as claimed in claim 13, the formation method of described semiconductor layer comprises the epitaxial growth that utilizes silane gas to carry out, and wherein silane gas pressure is approximately between 40 to 760Torr, and the growth temperature is about 1000 ℃.
15. the formation method of image sensering device as claimed in claim 11, the formation method of described semiconductor layer comprise that utilizing the described second type impurity to carry out ion injects.
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|---|---|---|---|
| US86427106P | 2006-11-03 | 2006-11-03 | |
| US60/864,271 | 2006-11-03 | ||
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377216A (en) * | 2013-08-16 | 2015-02-25 | 恒景科技股份有限公司 | Image sensor and fabricating method of image sensor |
| CN110149485A (en) * | 2012-03-30 | 2019-08-20 | 株式会社尼康 | Shooting unit, filming apparatus and shooting control program |
-
2007
- 2007-10-24 CN CNA2007101671709A patent/CN101174645A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110149485A (en) * | 2012-03-30 | 2019-08-20 | 株式会社尼康 | Shooting unit, filming apparatus and shooting control program |
| CN104377216A (en) * | 2013-08-16 | 2015-02-25 | 恒景科技股份有限公司 | Image sensor and fabricating method of image sensor |
| CN104377216B (en) * | 2013-08-16 | 2017-04-12 | 恒景科技股份有限公司 | Image sensor and fabricating method of image sensor |
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