CN101170142A - Plane indium and gallium infrared focusing plane detector and its making method - Google Patents

Plane indium and gallium infrared focusing plane detector and its making method Download PDF

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CN101170142A
CN101170142A CNA2007101707170A CN200710170717A CN101170142A CN 101170142 A CN101170142 A CN 101170142A CN A2007101707170 A CNA2007101707170 A CN A2007101707170A CN 200710170717 A CN200710170717 A CN 200710170717A CN 101170142 A CN101170142 A CN 101170142A
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electrode
photoetching
plane
inp
sio
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吴小利
唐恒敬
张可峰
李雪
龚海梅
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The invention discloses a flat type InGaAs infrared focal plane device, which includes a flat type PN junction formed by Zn diffusion on an epitaxial wafer. The invention is characterized in that: a thickened Cr/Au ring electrode is positioned around the upper part of the Zn diffusion area and the limitation on a photosensor element is realized by the Au layer reflection of incident lights. The shape of the thickened electrode is decided by a photoetching graph, so the effective photosensor element area can be controlled precisely. The preparation method of the device is characterized in that: before heat treatment, generate SiO2 passive film to prevent Zn from out diffusion in the heat treatment course, improve PN junction thermal stability, and realize device surface passivation and light antireflection by controlling the thickness of SiO2 film. p electrode adopts single Au layer, which simplifies p electrode growth process and is important to process stability and device evenness. The Au and the InP have better adhesiveness. And the thermal annealing course under the protection of SiO2 layer can realize good ohmic contact with Au/Zn/Au.

Description

Plane indium gallium infrared focusing plane detector and preparation method
Technical field
The present invention relates to the plane indium gallium infrared focusing plane detector, be specifically related to device architecture and preparation method.
Background technology
Plane indium gallium arsenic detector is the main flow structure of indium gallium arsenic detector, and it mainly adopts the method for Zn diffusion to realize that in the n-InP/InGaAs/n-InP epitaxial material p type mixes to prepare the pn interface of photosensitive unit.The device dark electric current that this method obtains is little, detectivity is high, the life-span is long, is adapted at the air remote sensing field and uses.But it has some inevitable shortcomings: 1) thermal stability of pn knot is relatively poor, because the diffusion coefficient of Zn element in InP is bigger, this makes it be easy to cause to outdiffusion the bad stability of pn knot in follow-up heat treatment.2) photosensitive unit enlarges, long minority carrier life time causes the side direction collection effect of pn knot very remarkable among the InP, finally cause the relative design load of actual photosensitive unit bigger than normal, for it is equated with design load, usually adopt the method for dwindling the diffusion window, this method is wayward because of the restriction that is subjected to propagated error, can introduce bigger heterogeneity simultaneously.3) p electrode contact process complexity, in indium Ga-As diode device, Au/Zn/Au is most important p electrode contact, this metal system can form good ohmic contact with p-InP,, the adhesiveness of it and InP is relatively poor, and its growth course is comparatively complicated; Particularly because the vapour pressure of Zn is bigger, the thickness of Zn is wayward in growth course.
Summary of the invention
Based on the problem that above-mentioned existing device exists, the objective of the invention is to propose plane indium gallium infrared focusing plane detector and the preparation method that a kind of pn of overcoming forms problems such as difficulty, the expansion of photosensitive unit and p electrode system complex process.
In order to achieve the above object, technical scheme of the present invention is: SiO 1) grew before the device heat treatment process 2Passivating film stop Zn in heat treatment process to outdiffusion, ring-like thickening Cr/Au electrode layer is set around 2) on Zn diffusion zone surface, by the Au floor reflection of incident light is realized the qualification in photosensitive unit district, 3) adopt the p electrode of Au as device, by at SiO 2Thermal annealing process under the layer protection obtains the ohmic contact of function admirable.
Plane indium gallium infrared focusing plane detector of the present invention, comprise: n-InP substrate 1, on the n-InP substrate, be arranged in order growth n-InP2/InGaAs intrinsic layer 3/n-InP cap layer 4 by epitaxy method, diffuse to form plane pn knot by photoetching, Zn on n-InP cap layer, growth has one deck SiO on Zn diffusion zone 6 and n-InP cap layer 2Passivation anti-reflection film 7 has a bottom electrode layer 9 in the growth of the another side of n-InP substrate, it is characterized in that: at SiO 2On the passivation antireflection layer, facing to around the Zn diffusion zone top annular electrode 8 being arranged, the Zn diffusion zone that is surrounded by annular electrode is photosensitive unit zone 10.The one P electrode 8-1 that draws from the Zn diffusion zone is arranged in photosensitive first zone, and the P electrode connects with annular electrode, and the P electrode is drawn detectable signal by annular electrode.The P electrode is made by Au, and annular electrode adopts Cr/Au, and its thickness is 3000-8000 .Said photosensitive unit is alignment or face battle array.SiO 2The thickness 2100-2500  of passivation anti-reflection film 7.
The preparation method of plane indium gallium infrared focusing plane detector of the present invention, its step is as follows:
The epitaxial wafer that it is good that § 1. will grow is used chloroform, ether, acetone, ethanol ultrasonic cleaning successively, and nitrogen dries up;
§ 2. positive glue (thick glue) photoetching are dried after the photoetching; Ar +Ion etching forms photo-etching mark; Acetone removes photoresist, deionized water rinsing, and nitrogen dries up;
§ 3. growth SiO 2Mask, positive glue (thick glue) photoetching Zn spreads window; HF acid buffer corrosion SiO 2Diffusion window mask, acetone removes photoresist, deionized water rinsing, nitrogen dries up;
§ 4. stopped pipes diffusion: with above-mentioned sample and Zn 3P 2Powder is vacuum-sealed in the quartz ampoule, and heating is spread then, forms plane pn knot; It is characterized in that:
§ 5. is the photoetching electrode hole on the Zn diffusion zone, the P electrode of growth and p-InP ohmic contact in the hole;
SiO grows on the § 6.P electrode, on the Zn diffusion zone and on the n-InP cap layer 2The passivation anti-reflection film, then under 450-490 ℃ temperature, annealing in process, time 10-15s;
§ 7. positive glue (thick glue) photoetching were dried 20 minutes for 65 ℃ after the photoetching, and the HF acid buffer erodes the SiO on the P electrode 2The passivation anti-reflection film, acetone removes photoresist, deionized water rinsing, nitrogen dries up;
§ 8. positive glue (thick glue) photoetching, ion beam sputtering growth Cr/Au thickening annular electrode, its thickness is 200-300/2800-7700 ;
The polishing of § 9. substrate backs, growth Au layer is as the n electrode.
Advantage of the present invention is:
1. because SiO 2Film is good Zn diffusion mask, growth SiO before the heat treatment 2The passivation anti-reflection film, successfully stoped the Zn element in heat treatment process to outdiffusion, strengthened the thermal stability in pn interface, and can make electrode in annealing, keep good pattern, simultaneously, by control SiO 2The thickness of film is realized the passivation of device surface and anti-reflection to light;
2. ring-likely add Au layer on the thick electrode to reflection of incident light, stoped the formation of this regional photo-generated carrier, realized control to effective photosensitive unit, compare with traditional method, it is easier realization on technology, and owing to the shape that adds thick electrode can be determined by litho pattern, so this method is more accurate to the control of effective photosensitive unit;
3.p electrode adopts the Au layer of individual layer, compares with the Au/Zn/Au multilayer system, it has simplified the p electrode growth technology of device, this all has important effect to the stability of technology and the uniformity of device performance, and individual layer Au layer and InP adhesiveness are better, the more important thing is, pass through SiO 2Thermal annealing process under the layer protection, it can be realized and the same good Ohmic contact of Au/Zn/Au system fully.
Description of drawings
Fig. 1 is the cross-sectional view of indium gallium arsenic detector array;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is preparation technology's flow chart of indium gallium arsenic detector array.
Embodiment
Below in conjunction with drawings and Examples the specific embodiment of the present invention is described in further detail:
See Fig. 3 a, the used epitaxial slice structure of present embodiment is: thickness is the n type InP substrate 1 of 650 μ m, carrier concentration 3-4 * 10 18Cm -3With the MOCVD technology on substrate 1 successively growth thickness be the n type InP layer 2 of 0.5 μ m, carrier concentration 2-3 * 10 18Cm -3Thickness is the In of 2.5 μ m 0.53Ga 0.47As intrinsic absorbed layer 3, carrier concentration 5-6 * 10 16Cm -3Thickness is the n type InP cap layer 4 of 1 μ m, and carrier concentration is greater than 5 * 10 16Cm -3Use chloroform, ether, acetone, ethanol ultrasonic cleaning epitaxial wafer then successively, nitrogen dries up; Positive glue (thick glue) photoetching was dried 20 minutes for 65 ℃ after the photoetching;
See Fig. 3 b, Ar +Ion etching forms photo-etching mark, and ion energy is 300eV, and line is 80cm -3, etching 10 minutes;
Acetone removes photoresist, deionized water rinsing, and nitrogen dries up;
Growth SiO 2Diffusion mask 7-1, thickness is 2300 , positive glue (thick glue) photoetching was dried 20 minutes for 65 ℃ after the photoetching;
HF acid buffer (HF: NH 4F: H 2O=3: 6: 9) corrosion SiO 2Diffusion window mask, acetone removes photoresist, deionized water rinsing, nitrogen dries up;
Stopped pipe diffusion: with sample and an amount of Zn 3P 2Powder is vacuum-sealed in the quartz ampoule, and heating is spread then, forms the diffusion region 6 of Zn;
See Fig. 3 c, positive glue (thick glue) photoetching was dried 20 minutes for 65 ℃ after the photoetching, the Au p electrode 8 of growth p-InP ohmic contact;
See Fig. 3 d, growth SiO 2Passivating film 7-2, thickness are 2300 , then at 490 ℃ of annealing down, time 12s;
Positive glue (thick glue) photoetching was dried HF acid buffer (HF: NH 20 minutes for 65 ℃ after the photoetching 4F: H 2O=3: 6: 9) corrosion SiO 2Passivating film, acetone removes photoresist, deionized water rinsing, nitrogen dries up;
Positive glue (thick glue) photoetching, ion beam sputtering growth Cr/Au adds thick electrode 8, and thickness is 200/4000 ;
See Fig. 1, the sample polished backside, growth Au layer is as n electrode 9, SiO 2Diffusion mask 7-1 and SiO 2Passivating film 7-2 constitutes SiO together 2Passivation anti-reflection film 7.

Claims (5)

1. plane indium gallium infrared focusing plane detector, comprise: n-InP substrate (1), on the n-InP substrate, be arranged in order growth n-InP (2)/InGaAs intrinsic layer (3)/n-InP cap layer (4) by epitaxy method, diffuse to form plane pn knot by photoetching, Zn on n-InP cap layer, growth has one deck SiO on Zn diffusion zone (6) and n-InP cap layer 2Passivation anti-reflection film (7) has a bottom electrode layer (9) in the growth of the another side of n-InP substrate, it is characterized in that:
At SiO 2On the passivation anti-reflection film (7), facing to around the Zn diffusion zone top annular electrode (8) being arranged, the Zn diffusion zone that is surrounded by annular electrode is photosensitive unit zone (10), the one P electrode (8-1) of drawing from the Zn diffusion zone is arranged in photosensitive first zone, the P electrode connects with annular electrode, and the P electrode is drawn detectable signal by annular electrode.
2. according to a kind of plane indium gallium infrared focusing plane detector of claim 1, it is characterized in that: said P electrode is made by Au.
3. according to a kind of plane indium gallium infrared focusing plane detector of claim 1, it is characterized in that: said annular electrode adopts Cr/Au.
4. according to a kind of plane indium gallium infrared focusing plane detector of claim 1, it is characterized in that: said photosensitive unit is alignment or face battle array.
5. the preparation method of a plane indium gallium infrared focusing plane detector, its step is as follows:
The epitaxial wafer that it is good that § A. will grow is used chloroform, ether, acetone, ethanol ultrasonic cleaning successively, and nitrogen dries up;
The positive glue of § B. (thick glue) photoetching is dried after the photoetching; Ar +Ion etching forms photo-etching mark; Acetone removes photoresist, deionized water rinsing, and nitrogen dries up;
The § C. SiO that grows 2Mask, thickness are 2100-2500 , and positive glue (thick glue) photoetching Zn spreads window; HF acid buffer corrosion SiO 2Diffusion window mask, acetone removes photoresist, deionized water rinsing, nitrogen dries up;
§ D. stopped pipe diffusion: with above-mentioned sample and Zn 3P 2Powder is vacuum-sealed in the quartz ampoule, and heating is spread then, forms plane pn knot; It is characterized in that:
§ E. is the photoetching electrode hole on the Zn diffusion zone, the Au P electrode of growth and p-InP ohmic contact in the hole;
SiO grows on the § F.P electrode, on the Zn diffusion zone and on the n-InP cap layer 2Passivation anti-reflection film, thickness are 2100-2500 , then under 450-490 ℃ temperature, and annealing in process, time 10-15s;
The positive glue of § G. (thick glue) photoetching was dried 20 minutes for 65 ℃ after the photoetching, and the HF acid buffer erodes the SiO on the P electrode 2The passivation anti-reflection film, acetone removes photoresist, deionized water rinsing, nitrogen dries up;
The positive glue of § H. (thick glue) photoetching, ion beam sputtering growth Cr/Au thickening annular electrode, thickness 200-300/2800-7700 :
The polishing of § I. substrate back, growth Au layer is as the n electrode.
CNA2007101707170A 2007-11-21 2007-11-21 Plane indium and gallium infrared focusing plane detector and its making method Pending CN101170142A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630717B (en) * 2008-07-16 2011-06-01 中国科学院半导体研究所 Organic-inorganic composite hybrid device structure capable of realizing conversion from low-frequency light to high-frequency light
CN102176489A (en) * 2011-02-22 2011-09-07 中国科学院上海微***与信息技术研究所 Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system
CN102544222A (en) * 2012-01-20 2012-07-04 中国科学院上海技术物理研究所 Method for preparing sub-pixel structured planar InGaAs infrared detector chip
CN102544043A (en) * 2012-01-20 2012-07-04 中国科学院上海技术物理研究所 Sub-pixel structured planar InGaAs infrared detector chip
CN104916731A (en) * 2015-06-02 2015-09-16 中国科学院上海技术物理研究所 Low-damage indium gallium arsenic detector p+n junction preparation method
CN107293611A (en) * 2017-07-04 2017-10-24 上海集成电路研发中心有限公司 Short-wave infrared diode and forming method thereof
CN111403546A (en) * 2019-12-17 2020-07-10 西南技术物理研究所 Diffusion method for preparing indium gallium arsenic photoelectric detector chip by predeposition diffusion source
CN112802738A (en) * 2021-04-06 2021-05-14 中山德华芯片技术有限公司 Method for improving zinc doping concentration in indium phosphide
CN114023846A (en) * 2021-10-29 2022-02-08 浙江光特科技有限公司 Method for reducing dark current of indium phosphide-based detector

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630717B (en) * 2008-07-16 2011-06-01 中国科学院半导体研究所 Organic-inorganic composite hybrid device structure capable of realizing conversion from low-frequency light to high-frequency light
CN102176489A (en) * 2011-02-22 2011-09-07 中国科学院上海微***与信息技术研究所 Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system
CN102544222A (en) * 2012-01-20 2012-07-04 中国科学院上海技术物理研究所 Method for preparing sub-pixel structured planar InGaAs infrared detector chip
CN102544043A (en) * 2012-01-20 2012-07-04 中国科学院上海技术物理研究所 Sub-pixel structured planar InGaAs infrared detector chip
CN104916731A (en) * 2015-06-02 2015-09-16 中国科学院上海技术物理研究所 Low-damage indium gallium arsenic detector p+n junction preparation method
CN104916731B (en) * 2015-06-02 2017-03-22 中国科学院上海技术物理研究所 Low-damage indium gallium arsenic detector p+n junction preparation method
CN107293611A (en) * 2017-07-04 2017-10-24 上海集成电路研发中心有限公司 Short-wave infrared diode and forming method thereof
CN111403546A (en) * 2019-12-17 2020-07-10 西南技术物理研究所 Diffusion method for preparing indium gallium arsenic photoelectric detector chip by predeposition diffusion source
CN112802738A (en) * 2021-04-06 2021-05-14 中山德华芯片技术有限公司 Method for improving zinc doping concentration in indium phosphide
CN114023846A (en) * 2021-10-29 2022-02-08 浙江光特科技有限公司 Method for reducing dark current of indium phosphide-based detector

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