CN101162334A - Electro-optic device and electronic device - Google Patents
Electro-optic device and electronic device Download PDFInfo
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- CN101162334A CN101162334A CNA2007101540007A CN200710154000A CN101162334A CN 101162334 A CN101162334 A CN 101162334A CN A2007101540007 A CNA2007101540007 A CN A2007101540007A CN 200710154000 A CN200710154000 A CN 200710154000A CN 101162334 A CN101162334 A CN 101162334A
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Abstract
The present invention provides a photoelectric device and an electronic equipment, which are used for reducing the bad states of residual image and lag phenomenon and the like which are generated when the dynamic image is displayed. The external shape of the pixel electrode (9a1-1) is approximately rectangular, a first edge part (29a1) facing to the pixel electrode (9a1-1) in the four edge parts extends along the X direction of the accompanying diagram and a dent (501) is arranged at one part of the edge part. The external shape of the pixel electrode (9a2-1) is same to the pixel electrode (9a1-1) and is approximate rectangular, a second edge part (29a2) facing to the pixel electrode (9a1-1) in the four edge parts extends along the X direction of the accompanying diagram and a convex part (502) is arranged at one part of the edge part. The convex part (502) and the region (R) restricted by the dent (501) coincidently extend from the second edge part (29a2) to the first edge part (29a1).
Description
Technical field
The present invention relates to the electro-optical device of liquid-crystal apparatus etc. for example and possess the technical field of the electronic equipment of the sort of electro-optical device.
Background technology
In liquid-crystal apparatus as this electro-optical device one example, by applying predetermined voltage, control between these interelectrode liquid crystal molecular orientation states to being arranged between pixel electrode that a pair of substrate that keeps liquid crystal goes up separately and counter electrode, and display image.
For this electro-optical device, sometimes take place because of following transverse electric field (just, the electric field parallel with real estate or comprise the oblique electric field of the component parallel with real estate) and the not good such technical matters place of orientation that produces liquid crystal molecule, this transverse electric field betides between this pixel electrode corresponding to the adjacent pixel electrode that sets potential difference (PD) separately on the substrate.For suppose to relatively to pixel electrode and counter electrode between apply longitudinal electric field (just, the electric field of the direction vertical) electro-optical substances such as liquid crystal with real estate, if applied this transverse electric field, following such problem then takes place, promptly produce as the not good electro-optical substance work of liquid crystal aligning not goodly, the light leakage etc. that this part place takes place descends contrast.
As means one example that is used for addressing this is that the place, patent documentation 1 publicity goes out a kind of liquid crystal indicator, this liquid crystal indicator is in order to weaken the transverse electric field that produces in the not good zone (farmland) of orientation, possesses the source line that the direction of orientation with liquid crystal molecule extends in parallel.In addition, also adopt following method sometimes, the response of this method liquid crystal when improve showing dynamic image, and make the orientation of liquid crystal not good be difficult in sight.
Patent documentation 1: the spy opens flat 9-61855 communique
With regard to this electro-optical device, when showing dynamic image, because of the influence of transverse electric field produces the afterimage of image and conditions of streaking (object that is moving stays afterimage, because of afterbody in tow seems the unclear phenomenon that can not obtain the dynamic image of smoothness) when showing dynamic image.More particularly, it is generally acknowledged when the driving of electro-optical device, longitudinal electric field that between counter electrode and 2 pixel electrodes corresponding, produces and the transverse electric field electric field separately that produces because of the potential difference (PD) of their 2 pixel electrodes with this counter electrode towards aspect the reversal dip of the liquid crystal that takes place because of keeping in balance and the generation in following zone, thereby produce the not good situation that afterimage etc. shows, in this zone, in pixel, limit the orientation of liquid crystal by the direction that is not the former direction that should be orientated.Thereby, further improving at the requirement of following technology, this technology can lower reversal dip etc. by weakening transverse electric field, with high-quality display image.
On the other hand, with regard to this electro-optical device, also have the requirement that improves at contrast, and avoid as far as possible in addition because the such requirement of contrast decline of the flat shape of pixel electrode being worked hard and being produced in order to lower afterimage and conditions of streaking.
Summary of the invention
Thereby, the present invention is place etc. and making in view of the above problems, its purpose is electro-optical device that liquid-crystal apparatus etc. is provided and the electronic equipments such as projector that possess the sort of electro-optical device, for example can suppress decrease of contrast, lower simultaneously the not good situation that afterimage and conditions of streaking etc. show takes place when showing dynamic image.
Mode of electro-optical device involved in the present invention is characterized by, and possesses: a pair of substrate; Electro-optical substance is held between above-mentioned a pair of substrate; The 1st pixel electrode and the 2nd pixel electrode on a side's of above-mentioned a pair of substrate substrate, look devices spaced apart and adjacent setting from the direction along the normal of the real estate of an above-mentioned side's substrate, and are supplied to different current potential mutually; Above-mentioned the 1st pixel electrode has recess, this recess is arranged among the edge part of above-mentioned the 1st pixel electrode towards at least a portion of the 1st edge part of above-mentioned the 2nd pixel electrode, above-mentioned the 2nd pixel electrode has protuberance, this protuberance is arranged among the edge part of above-mentioned the 2nd pixel electrode towards at least a portion of the 2nd edge part of above-mentioned the 1st pixel electrode, and from above-mentioned the 2nd edge part by with outstanding by the mode of the area coincidence that above-mentioned recess limited.
According to this mode, between a pair of substrate, clamping is the electro-optical substance of liquid crystal etc. for example.On a side substrate, set the 1st pixel electrode and the 2nd pixel electrode, they look from the direction along the normal of the real estate of a side substrate, just the plane looks, devices spaced apart and adjacent setting, and when the driving of this electro-optical device, be supplied to different current potential mutually.
Here, so-called " being supplied to different current potential mutually ", be not defined as from driving circuit according to picture signal mutually different current potentials supply with the 1st pixel electrode and the 2nd pixel electrode situation separately, for example also comprise because of being used for the cloth line resistance difference result that current potential is supplied with the 1st pixel electrode and the wiring separately of the 2nd pixel electrode is supplied with the 1st pixel electrode and the 2nd pixel electrode the situation of mutual different current potentials.
The 1st pixel electrode and the 2nd pixel electrode be for example be formed with semiconductor element, data line and sweep traces etc. such as TFT as a side's of tft array substrate substrate on by rectangular a plurality of pixel electrodes of arranging among adjacent 2 pixel electrodes that set.Also have, a side substrate for example also can be the transparency carrier and the substrate after having formed the multi-ply construction that comprises dielectric film on this transparency carrier of glass substrate or quartz base plate etc.
In this mode, the flat shape of the distinctive pixel electrode of the present invention that utilization will illustrate below lowers when it drives corresponding to the 1st pixel electrode and the 2nd pixel electrode potential difference (PD) separately and results from transverse electric field between the 1st pixel electrode and the 2nd pixel electrode.More particularly, lower among the edge part that the 1st edge part that the 1st pixel electrode has and the 2nd pixel electrode have, devices spaced apart and towards the transverse electric field that produces between the 2nd edge part of the 1st edge part.
According to this mode, because the 1st pixel electrode has recess, this recess is arranged among the edge part of the 1st pixel electrode towards at least a portion of the 1st edge part of the 2nd pixel electrode, and the 2nd pixel electrode has protuberance, this protuberance is arranged among the edge part of the 2nd pixel electrode towards at least a portion of the 2nd edge part of the 1st pixel electrode, and from the 2nd edge part by with outstanding, so can weaken the transverse electric field that produces between the 1st edge part and the 2nd edge part to small part by the mode of the area coincidence that recess limited.More particularly, can transverse electric field partly be weakened transverse electric field with blocking, can make the electric-field intensity distribution that produces between the 1st edge part and the 2nd edge part become inhomogeneous along the direction that the 1st edge part and the 2nd edge part extend separately.Utilize the inhomogeneous of this electric field intensity, compare with the situation that recess and protuberance are not set, just compare, can lower the transverse electric field that produces between adjacent the 1st pixel electrode that sets and the 2nd pixel electrode with the 1st edge part and the 2nd edge part situation of extending that is parallel to each other.
The flat shape of this recess and protuberance both can be identical mutually, also can be different mutually.In addition, as long as on by the zone that recess limited protuberance is overlapped, recess and protuberance also can be mutual different sizes.
In addition, according to this mode, because as long as by making electric-field intensity distribution between the 1st pixel electrode and the 2nd pixel electrode uneven degree that becomes, on the 1st edge part and the 2nd edge part at least a portion separately, respectively recess is set and protuberance gets final product, so the decline of aperture opening ratio can be suppressed in fact not in the scope that the contrast to image quality exerts an influence.
Like this, according to mode of electro-optical device involved in the present invention, because can suppress the decline of aperture opening ratio, weaken transverse electric field simultaneously, so can suppress because of the aperture opening ratio contrast cause that descends descends, reduce the not good situation that the afterimage that causes because of transverse electric field and conditions of streaking etc. show simultaneously.
In electro-optical device another way involved in the present invention, above-mentioned recess and raised part also can have identical flat shape mutually.
According to this mode, compare with the situation that recess and protuberance is formed different mutually flat shapes, be easy to carry out the 1st pixel electrode and the 2nd pattern of pixel electrodes and form.In addition, the interval that also is easy to carry out between recess and protuberance is set.That is to say that can form the 1st pixel electrode and the 2nd pixel electrode by following mode, this mode is: the 1st pixel electrode and the 2nd pixel electrode size separately increase as far as possible, and recess and protuberance do not contact.
In electro-optical device another way involved in the present invention, can also possess counter electrode, it is formed on the opposing party's the substrate of above-mentioned a pair of substrate, and with above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode subtend, above-mentioned mutually different current potential is to be benchmark, polarity different current potential mutually with the common potential that supplies to above-mentioned counter electrode.
According to this mode, for example when employing makes the polarities of potentials that imposes on each pixel electrode carry out anti-phase anti-phase type of drive with respect to the reference potential of counter electrode by pre-defined rule, also can weaken transverse electric field, and can reduce afterimage and conditions of streaking.As this anti-phase type of drive, can adopt the anti-phase type of drive of 1H or make it the anti-phase anti-phase type of drive of 1S or make the anti-phase some phase inversion system of polarity of current potential by each pixel by every row, the anti-phase type of drive of this 1H for example carry out the demonstration corresponding with a frame or one 's picture signal during, being that the current potential of positive polarity drives the pixel electrode that is arranged in odd-numbered line for predetermined reference potential, and being that the current potential of negative polarity drives the pixel electrode be arranged in even number line for reference potential, carry out the ensuing demonstration corresponding with next frame or the picture signal of next during, current potential with positive polarity drives the pixel electrode that is arranged in even number line on the contrary, and driving the pixel electrode that is arranged in odd-numbered line with the current potential of negative polarity (that is to say, drive pixel electrode by the current potential of identical polar with delegation, and make relevant polarities of potentials by each row with frame or be the cycle to carry out anti-phase).According to this mode, even when adopting this anti-phase type of drive to show dynamic image, also can effectively reduce the generation of afterimage and conditions of streaking.
Electro-optical device another way involved in the present invention is characterized by, and possesses: a pair of substrate; Electro-optical substance is held between above-mentioned a pair of substrate; The 1st pixel electrode and the 2nd pixel electrode, on a side's of above-mentioned a pair of substrate substrate, devices spaced apart and adjacent setting; And conducting film, with and the mode of the area coincidence that between above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode, extends form island, be supplied to and above-mentioned the 1st pixel electrode and the 1st different current potential of above-mentioned the 2nd pixel electrode current potential separately.
According to this mode, between a pair of substrate, clamping is the electro-optical substance of liquid crystal etc. for example.On a side substrate, devices spaced apart and adjacent the 1st pixel electrode and the 2nd pixel electrode of setting.More particularly, for example the 1st pixel electrode and the 2nd pixel electrode be for example be formed with semiconductor element, data line and sweep traces etc. such as TFT as a side's of tft array substrate substrate on by adjacent 2 pixel electrodes that set among rectangular a plurality of pixel electrodes of arranging.Also having, for example is the transparency carrier and the substrate after having formed the multi-ply construction that comprises dielectric film on this transparency carrier of glass substrate or quartz base plate etc. as a side's of tft array substrate etc. substrate.
Conducting film with and the mode of the area coincidence that between the 1st pixel electrode and the 2nd pixel electrode, extends form island, when the driving of this electro-optical device, be supplied to 1st current potential different with the 1st pixel electrode and the 2nd pixel electrode current potential separately.So-called " zone of extending between the 1st pixel electrode and the 2nd pixel electrode " is, be formed with the zone of pixel switch with semiconductor elements such as TFT and various wirings, for example be the non-open area of transmitted light not in fact among the zone that is included in the pixel, this pixel switch is used for driving the 1st pixel electrode and the 2nd pixel electrode separately with TFT.Conducting film forms island in this non-open area.Conducting film is because be supplied to 1st current potential different with the 1st pixel electrode and the 2nd pixel electrode current potential separately, results from transverse electric field between these pixel electrodes so can lower corresponding to the 1st pixel electrode and the 2nd pixel electrode potential difference (PD) separately.More particularly, can utilize the 1st current potential of supplying with to conducting film, part is blocked the transverse electric place along real estate that produces between these pixel electrodes to be made it to weaken.
This conducting film forms, and the area coincidence that extends between the 1st pixel electrode and the 2nd pixel electrode gets final product, and for example both can be formed at and the 1st pixel electrode and the same one deck of the 2nd pixel electrode, also can be formed at the layer different with these pixel electrodes.In addition, conducting film also can be in the scope that pixel aperture ratio is descended and the partially overlapping separately of the 1st pixel electrode and the 2nd pixel electrode.In addition, the flat shape of conducting film is not defined as the shape (rectangular-shaped) of following embodiment institute example, can be circular or various polygons or irregular flat shape yet.
In addition, according to this mode, because the zone of extending between the 1st pixel electrode and the 2nd pixel electrode just is not used in the zone that image shows in the pixel, form conducting film, so the decline of aperture opening ratio can be suppressed in fact not in the scope that the contrast to image quality exerts an influence.
Like this, according to this mode,, weaken transverse electric field simultaneously because can suppress the decline of aperture opening ratio, so can suppress because of the aperture opening ratio contrast cause that descends descends, reduce the not good situation that the afterimage that causes because of transverse electric field and conditions of streaking etc. show simultaneously.
Also have, to the 1st pixel electrode and the 2nd pixel electrode separately, supply with different current potential mutually corresponding to the driving of these pixel electrodes.This current potential be not defined as from driving circuit corresponding to picture signal mutually different current potentials supply with the 1st pixel electrode and the 2nd pixel electrode situation separately, for example also comprise because of being used for the cloth line resistance difference result that current potential is supplied with the 1st pixel electrode and the wiring separately of the 2nd pixel electrode is supplied with the 1st pixel electrode and the 2nd pixel electrode the situation of mutual different current potentials.
In electro-optical device another way involved in the present invention, can also possess counter electrode, it is formed on the opposing party's the substrate of above-mentioned a pair of substrate, and with above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode subtend, above-mentioned the 1st current potential is the current potential different with the common potential that supplies to above-mentioned counter electrode.
According to this mode, when the driving of this electro-optical device, along with the 1st pixel electrode and the 2nd pixel electrode between the transverse electric field that the produces direction of intersecting, just, between counter electrode and conducting film, produce longitudinal electric field along the vertical direction of real estate of a relative side's substrate.This longitudinal electric field can partly be blocked the transverse electric field that produces between the 1st pixel electrode and the 2nd pixel electrode, makes the electric-field intensity distribution of transverse electric field become inhomogeneous.In view of the above, can lower the transverse electric field that produces between the 1st pixel electrode and the 2nd pixel electrode.
In this mode, above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode current potential separately also can be to be benchmark, polarity different current potential mutually with above-mentioned common potential.
According to this mode, for example when employing makes the reference potential of the relative counter electrode of polarities of potentials that imposes on each pixel electrode carry out anti-phase anti-phase type of drive by pre-defined rule, also can weaken transverse electric field, can reduce afterimage and conditions of streaking.As this anti-phase type of drive, can adopt the anti-phase type of drive of 1H or make it the anti-phase anti-phase type of drive of 1S or make the anti-phase some phase inversion system of polarity of current potential by each pixel by every row, the anti-phase type of drive of this 1H for example carry out the demonstration corresponding with a frame or one 's picture signal during, being that the current potential of positive polarity drives the pixel electrode that is arranged in odd-numbered line with respect to predetermined reference potential, and being that the current potential of negative polarity drives the pixel electrode be arranged in even number line with respect to reference potential, carry out the ensuing demonstration corresponding with next frame or the picture signal of next during, current potential with positive polarity drives the pixel electrode that is arranged in even number line on the contrary, and driving the pixel electrode that is arranged in odd-numbered line with the current potential of negative polarity (that is to say, drive pixel electrode with the current potential of identical polar with delegation, and make relevant polarities of potentials by each row with frame or be the cycle to carry out anti-phase).According to this mode, even when adopting this anti-phase type of drive to show dynamic image, also can effectively reduce the generation of afterimage and conditions of streaking.
In electro-optical device another way involved in the present invention, above-mentioned conducting film also can be formed at and above-mentioned the 1st pixel electrode and the same one deck of above-mentioned the 2nd pixel electrode on an above-mentioned side's substrate.
According to this mode, can form with the common film of the 1st pixel electrode and the 2nd pixel electrode after, these pixel electrodes and conductive film figure are formed predetermined flat shape.Thereby, compare with the situation that forms conducting film by the operation different with the operation that forms these pixel electrodes, can make the manufacture process of electro-optical device become simple.In addition, compare with the situation that forms conducting film at the lower layer side of the 1st pixel electrode and the 2nd pixel electrode, because can shorten the distance between counter electrode and conducting film,, can improve the effect that lowers transverse electric field so the longitudinal electric field that produces between counter electrode and conducting film is increased.
In electro-optical device another way involved in the present invention, can also expand the width of the part of above-mentioned zone by with one deck the expansion of above-mentioned compartment ground being formed above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode above-mentioned.
According to this mode, even when narrower, also can guarantee to form the space of conducting film at the interval of the 1st pixel electrode and the 2nd pixel electrode.
In electro-optical device another way involved in the present invention, can also on an above-mentioned side's substrate, possess: image signal line, be formed on the lower layer side of above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode, to the supply picture signal separately of above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode; And connecting portion, above-mentioned image signal line and above-mentioned conducting film are electrically connected.
According to this mode, because the current potential of image signal line can be supplied with conducting film, so the state of orientation of the electro-optical substances such as liquid crystal between between conducting film and counter electrode can be restricted to the state identical with driving condition.Can utilize this electro-optical substance, lower being arranged in the state of orientation disorder that electro-optical substance produced on separately of the 1st pixel electrode and the 2nd pixel electrode and between these pixel electrodes, interrelate continuously.Thereby, for example can effectively lower the poor display of the conditions of streaking that when showing dynamic image, produces etc.
Mode of electronic equipment involved in the present invention possesses the electro-optical device of the invention described above.
According to mode of electronic equipment involved in the present invention, owing to possess the related electro-optical device of the 1st or the 2nd invention of the invention described above, thereby can realize to carry out the various electronic equipments such as video tape recorder, workstation, television telephone set, POS terminal and touch panel of projection display device, portable telephone, electronic notebook, word processor, view finder formula or the supervision direct viewing type of high-quality demonstration.In addition, as electronic equipment involved in the present invention, can also realize electrophoretic apparatus of electronic paper etc. for example etc.
This effect of the present invention and other advantages will be able to clearly from the embodiment that the following describes.
Description of drawings
Fig. 1 is the vertical view of the related embodiment of electro-optical device of expression the 1st invention of the present invention.
Fig. 2 is II-II ' sectional view of Fig. 1.
Fig. 3 is the equivalent circuit diagram of the various elements, wiring of a plurality of pixels of composing images viewing area in the related embodiment of electro-optical device of the 1st invention of the present invention etc.
Fig. 4 is the part vertical view (its 1) of expression electro-optical device concrete structure shown in Figure 1.
Fig. 5 is the part vertical view (its 2) of expression electro-optical device concrete structure shown in Figure 1.
Fig. 6 is VI-VI ' sectional view of Fig. 4 and Fig. 5.
Fig. 7 is that explanation the present invention the 1st invents the used concept map of duty of the anti-phase type of drive of using in related embodiment of electro-optical device of 1H.
Fig. 8 is a concept map of representing the liquid crystal aligning state in the related embodiment comparative example of electro-optical device of the 1st invention of the present invention with figure.
Fig. 9 is the part vertical view of the related embodiment concrete structure of electro-optical device of expression the 2nd invention of the present invention.
Figure 10 is the X-X ' line sectional view of Fig. 9.
Figure 11 is that the used concept map of duty of the anti-phase type of drive of using in related embodiment of electro-optical device of 1S is invented in explanation the of the present invention the 2nd.
Figure 12 is a concept map of representing the liquid crystal aligning state in the related embodiment comparative example of electro-optical device of the 2nd invention of the present invention with figure.
Figure 13 is the accompanying drawing of expression as the liquid crystal projector structure of an embodiment of electronic equipment involved in the present invention.
Symbol description
1,601 ... liquid-crystal apparatus, 10 ... tft array substrate, 20 ... the subtend substrate, 9a ... pixel electrode, 92 ... conducting film, 91 ... contact hole, 93 ... notch part, 501 ... recess, 502 ... protuberance
Embodiment
Below, on one side with reference to accompanying drawing, each embodiment of electro-optical device involved in the present invention and electronic equipment is described on one side.
＜the 1 embodiment 〉
＜1: electro-optical device 〉
＜1-1: the one-piece construction of electro-optical device 〉
At first, on one side with reference to Fig. 1 and Fig. 2, the electro-optical device that present embodiment is related is described on one side.Fig. 1 is a vertical view of seeing the electro-optical device of tft array substrate and each structure important document formed thereon from subtend substrate one side, and Fig. 2 is II-II ' sectional view of Fig. 1.In the present embodiment, as an example of electro-optical device, be example with the liquid-crystal apparatus of enumerating driving circuit internally-arranged type tft active matrix type of drive.
In Fig. 1 and Fig. 2, in liquid-crystal apparatus 1, tft array substrate 10 and the configuration of subtend substrate 20 subtends.Between tft array substrate 10 and subtend substrate 20, enclose liquid crystal layer 50, tft array substrate 10 and subtend substrate 20 utilizes the encapsulant 52 that is arranged in the sealing area bonding mutually, and the sealing zone is positioned at around the image display area 10a as the pixel region that a plurality of pixel portions are set.
Inboard parallel with the sealing area that disposes encapsulant 52, the light-proofness frame photomask 53 that limits image display area 10a frame region is arranged on subtend substrate 20 sides.But part or all of this frame photomask 53 also can be used as built-in photomask and is arranged at tft array substrate 10 sides.Also have, have the neighboring area that is positioned at image display area 10a periphery.In other words, in the present embodiment, particularly the center from tft array substrate 10 looks, stipulates as the neighboring area outward from this frame photomask 53.
Zone among the neighboring area, that be positioned at the sealing area outside that disposes encapsulant 52, data line drive circuit 101 and external circuit-connecting terminal 102 are provided with along a limit of tft array substrate 10.Scan line drive circuit 104 covers along adjacent with this limit 2 limits and by frame photomask 53, is provided with.Moreover, in order to connect 104 of two scan line drive circuits that are arranged at image display area 10a both sides like this, cover along the remaining limit of tft array substrate 10 and by frame photomask 53, be provided with many wirings 105.
In 4 corner portions of subtend substrate 20, configuration is as the conduction element up and down 106 that plays a role of Lead-through terminal up and down between two substrates.On the other hand, at tft array substrate 10, relative with these corner portions to the zone Lead-through terminal up and down is set.Thus, can between tft array substrate 10 and subtend substrate 20, obtain and conduct.
In Fig. 2, on tft array substrate 10, form alignment films on the pixel electrode 9a after being formed with wirings such as TFT as the pixel switch element, sweep trace, data line.On the other hand, on the subtend substrate 20 except counter electrode 21, also form latticed or banded photomask 23, and partly form alignment films in the superiors.Comprise in the 1st invention of the present invention as the liquid crystal layer 50 of the liquid crystal of " electro-optical substance " example for example by a kind of or the mixed liquid crystal of several nematic crystals constituted, and between a pair of alignment films, obtain predetermined state of orientation.
At tft array substrate 10 pixel electrode 9a is set, and side setting was implemented the alignment films that predetermined orientation such as milled processed is handled thereon.For example, pixel electrode 9a is made of the transparent and electrically conductive film of ITO (Indium TinOxide, tin indium oxide) film etc., and alignment films is the organic membrane of polyimide film etc.Alignment films also can be to adopt the formed inorganic alignment film of oblique side's vapour deposition method.
At subtend substrate 20, in its scope of whole, counter electrode 21 is set, and alignment films 22 is set at its downside.Counter electrode 21 for example is made of the transparent and electrically conductive film of ITO film etc.Alignment films 22 employings and alignment films 16 identical materials and film formation method form.
At subtend substrate 20, latticed or banded photomask can be set also.By adopting this structure, the semiconductor elements such as TFT that are arranged at tft array substrate 10 are carried out shading.
Be configured to pixel electrode 9a and counter electrode 21 relatively to tft array substrate 10 and subtend substrate 20 between, form liquid crystal layer 50.Liquid crystal layer 50 utilizes alignment films to obtain predetermined state of orientation under the state that does not apply electric field from pixel electrode 9a.
Also have, on the tft array substrate 10 of Figure 1 and Figure 2, except the driving circuit of these data line drive circuits 101, scan line drive circuit 104 etc., can also form: sample circuit, the picture signal on the image signal line is taken a sample its supply data line; Pre-charge circuit supplies with the precharging signal of predetermined voltage level respectively for many data lines prior to picture signal; Check circuit is used for checking in the manufacture process or the quality, defective etc. of this electro-optical device when dispatching from the factory; Deng.
＜1-2: the electric connection structure of pixel portions 〉
Below, on one side with reference to Fig. 3, describe the pixel portions electric connection structure of liquid-crystal apparatus 1 on one side in detail.Fig. 3 is the equivalent electrical circuit that forms various elements, wiring etc. in rectangular a plurality of pixels that constitutes the image display area of liquid-crystal apparatus 1.
In Fig. 3, the image display area that constitutes liquid-crystal apparatus 1 form rectangular a plurality of pixels separately in, form pixel electrode 9a and TFT30.TFT30 is electrically connected to pixel electrode 9a, when the work of liquid-crystal apparatus 1 pixel electrode 9a is carried out switch control.The data line 6a that is supplied to picture signal is electrically connected to the source of TFT30.Write data line 6a picture signal S1, S2 ..., Sn both can supply with according to the line order by this order, also can supply with by every group between many adjacent data line 6a.
Be electrically connected sweep trace 11a at the grid of TFT30, liquid-crystal apparatus 1 constitutes, by predetermined timing with pulse mode with sweep signal G1, G2 ..., Gm, impose on sweep trace 11a by this order according to the line order.Pixel electrode 9a is electrically connected to the leakage of TFT30, by will as the TFT30 of on-off element closed certain during, picture signal S1, the S2 that supplies with from data line 6a ..., Sn just is written into by predetermined timing.By pixel electrode 9a write the predetermined level in the liquid crystal picture signal S1, S2 ..., Sn at pixel electrode and be formed at be held between the counter electrode 21 of subtend substrate 20 certain during.
The liquid crystal that comprises in the liquid crystal layer 50 just can be modulated light by according to the voltage level that is applied the orientation of elements collection, order being changed, and carries out gray shade scale and shows.If often bright morphotype formula, then according to being that voltage that unit was applied reduces the transmissivity to incident light with each pixel, if often dark morphotype formula, then according to being that voltage that unit was applied increases the transmissivity to incident light with each pixel, and has light with the corresponding contrast of picture signal from the liquid-crystal apparatus outgoing on the whole.Leaking appears in the picture signal that keeps in order to prevent here, and is formed at the liquid crystal capacitance parallel connection between pixel electrode 9a and the counter electrode, has added memory capacitance 70.Whereby, the current potential retention performance among the pixel electrode 9a is improved, and can improve the display characteristic of contrast or flicker and so on.
＜1-3: the concrete structure of electro-optical device 〉
Below, on one side with reference to Fig. 4 to Fig. 6, explanation on one side realizes the concrete structure of the liquid-crystal apparatus 1 of above-mentioned work.
In Fig. 4 to Fig. 6, foregoing circuit important document and pixel electrode 9a are formed on the tft array substrate 10.Tft array substrate 10 for example is made of glass substrate, quartz base plate, SOI substrate and semiconductor substrate etc., and disposes with subtend substrate 20 subtends that for example are made of glass substrate or quartz base plate.The circuit important document is provided with in order to drive pixel electrode 9a, is meant here, in being stacked on from the tight upside of tft array substrate 10 to the scope of the tight downside of pixel electrode 9a, from sweep trace 11a to the 4 interlayer dielectrics 44 (referring to Fig. 6).Pixel electrode 9a (in Fig. 5,9a ' expresses profile with thick line) be disposed at by the pixel region of dividing in length and breadth and arranging separately in, and form at its boundary, data line 6a and sweep trace 11a and be arranged in latticed (referring to Fig. 4 and Fig. 5).
Conducting film after the figure that constitutes each circuit important document forms is from comprising in order down: the 1st layer, comprise sweep trace 11a; The 2nd layer, comprise gate electrode 3a; The 3rd layer, comprise the set potential lateral capacitance electrode of memory capacitance 70; The 4th layer, comprise data line 6a etc.; With the 5th layer, comprise capacitance wiring 400 etc.Between the 1st layer of the-the 2nd interlayer, the 2nd layer of the-the 3rd interlayer, the 3rd layer of the-the 4th interlayer, the 4th layer of the-the 5th interlayer and the 5th layer and pixel electrode 9a, underlying insulation film the 12, the 1st interlayer dielectric the 41, the 2nd interlayer dielectric the 42, the 3rd interlayer dielectric 43 and the 4th interlayer dielectric 44 is set respectively, prevents to produce short circuit between above-mentioned each important document.Also have, wherein the 1st layer to the 3rd layer is illustrated among Fig. 4 as underclad portion, and the 4th layer, the 5th layer and pixel electrode 9a are illustrated among Fig. 5 as top section.
Structure-sweep trace of＜the 1 layer etc.-
The 1st layer is made of sweep trace 11a.Sweep trace 11a figure forms the shape that comprises main line part and teat, and this main line part extends along the directions X of Fig. 4, and this teat is pressed the Y direction of Fig. 4 of data line 6a or capacitance wiring 400 extensions and extended.This sweep trace 11a for example is made of the electric conductivity polysilicon, can adopt at least a metal simple-substance, alloy, metal silicide, multi-crystal silicification thing or their laminated body that comprise among Ti, Cr, W, Ta, the contour melting point metal of Mo to wait in addition and form.
Structure-TFT of＜the 2 layer etc.-
The 2nd layer is made of TFT30 and repeater electrode 719.TFT30 for example is LDD (LightlyDoped Drain, a lightly doped drain) structure, possesses gate electrode 3a, semiconductor layer 1a and comprises the dielectric film 2 of gate insulating film, and this gate insulating film makes gate electrode 3a and semiconductor layer 1a insulation.Gate electrode 3a for example adopts the electric conductivity polysilicon to form.Semiconductor layer 1a is made of channel region 1a ', low concentration source region 1b and low concentration drain region 1c and high concentration source region 1d and high concentration drain region 1e.Also have, TFT30 preferably has the LDD structure, but both can be low concentration source region 1b, low concentration drain region 1c not to be carried out the bias structure that impurity mixes, can be again with gate electrode 3a as mask with impurity mix into high concentration form high concentration source region and high concentration drain region from matching type.In addition, for example conduct and the same film of gate electrode 3a form repeater electrode 719.
The gate electrode 3a of TFT30 is electrically connected on the sweep trace 11a by formed contact hole 12cv in the underlying insulation film 12.Underlying insulation film 12 for example is made of silicon oxide film etc., and except layer insulation function to layers 1 and 2, also prevent to grind the function that TFT30 element characteristic that the crackle that causes, spot etc. cause changes because of substrate surface by being formed on whole of tft array substrate 10, having.
Structure-memory capacitance of＜the 3 layer etc.-
The 3rd layer is made of memory capacitance 70.The structure of memory capacitance 70 is that capacitance electrode 300 and lower electrode 71 are by the configuration of dielectric layer subtend.Capacitance electrode 300 is electrically connected on the capacitance wiring 400.Lower electrode 71 is electrically connected to the high concentration drain region 1e of TFT30 and going up separately of pixel electrode 9a.
Lower electrode 71 is connected by the contact hole of leaving at the 1st interlayer dielectric 41 83 with high concentration drain region 1e.In addition, lower electrode 71 and pixel electrode 9a carry out relaying, and are electrically connected in contact hole 89 by contact hole 881,882,804 and repeater electrode the 719, the 2nd repeater electrode 6a2,402 pairs of each layers of the 3rd repeater electrode.
This capacitance electrode 300 and lower electrode 71 are for example used the polysilicon of electric conductivity, dielectric layer is used monox.The 1st interlayer dielectric 41 for example adopts NSG (silicate glass undopes) to form.In addition, to the 1st interlayer dielectric 41, can use silicate glass, silicon nitride or the monox etc. of PSG (phosphosilicate glass), BSG (borosilicate glass) and BPSG (boron phosphorus silicate glass) etc.
Also have, the memory capacitance 70 of this moment because it forms, do not arrive the pixel region roughly corresponding with the formation zone of pixel electrode 9a (in the income lightproof area), thereby aperture ratio of pixels is able to keep more greatly as what distinguish from the vertical view of Fig. 4.
Structure-data line of＜the 4 layer etc.-
The 4th layer is made of data line 6a.Data line 6a is from down in order, forms as 3 tunics of aluminium, titanium nitride, silicon nitride.Silicon nitride layer has carried out figure formation by big slightly size, makes it to cover the aluminium lamination and the titanium nitride layer of its lower floor.In addition, at the 4th layer, as with the same film of data line 6a, form capacitance wiring with relay layer 6a1 and the 2nd repeater electrode 6a2.They form, and are separated from each other as shown in Figure 5.
Capacitance wiring is electrically connected by contact hole 801 and the capacitance electrode of leaving at the 2nd interlayer dielectric 42 300 with relay layer 6a1, to carrying out relaying between capacitance electrode 300 and the capacitance wiring 400.Capacitance wiring by connecting the contact hole 882 of the 1st interlayer dielectric 41 and the 2nd interlayer dielectric 42, is electrically connected to repeater electrode 719 with relay layer 6a2 as mentioned above.This interlayer dielectric 42 for example can adopt silicate glass, silicon nitride or the monox etc. of NSG, PSG, BSG and BPSG etc., forms.
Structure-capacitance wiring of＜the 5 layer etc.-
The 5th layer is made of capacitance wiring 400 and the 3rd repeater electrode 402.Capacitance wiring 400 extends and is set to around the image display area of display panel, because of and decide potential source and be electrically connected, and become set potential.As shown in Figure 5, capacitance wiring 400 forms latticed that directions X and Y direction extend separately in the accompanying drawing, and is pressing the part that directions X extends, and is provided with breach in order to ensure the formation zone of the 3rd repeater electrode 402.In addition, capacitance wiring 400 is for the data line 6a, the sweep trace 11a that cover its lower floor and TFT30 etc., compares with the structure of these circuit important documents and forms wide cut.Whereby, each circuit important document is by shading, prevents to make the incident light reflection and causes the harmful effect of the soft edge etc. of pixel in the projected image.
Moreover it is shaped as the corner portion that the directions X extension of capacitance wiring 400 and Y direction extension just in time intersect, and the edge portion of general triangular is outstanding a little.Can utilize this edge portion, effectively carry out the light of the semiconductor layer 1a of TFT30 is blocked.That is to say, by by edge portion reflection or absorb the light that semiconductor layer 1a is entered from oblique upper, and can suppress the generation of light leakage current among the TFT30, show the high quality image of flicker etc.
The contact hole 803 of capacitance wiring 400 by leaving at the 3rd interlayer dielectric 43 is electrically connected with relay layer 6a1 with capacitance wiring.In addition, at the 4th layer, as with capacitance wiring 400 same films, form the 3rd repeater electrode 402.The 3rd repeater electrode 402 as mentioned above, by contact hole 804 and contact hole 89, to carrying out relaying between the 2nd repeater electrode 6a2 and pixel electrode 9a.Also have, these capacitance wirings 400 and the 3rd repeater electrode 402 are double-decker, for example lamination aluminium, titanium nitride.
On the 4th layer, whole ground forms the 4th interlayer dielectric 44.At the 4th interlayer dielectric 44, leave and be used for pixel electrode 9a and 402 contact holes that are electrically connected 89 of the 3rd repeater electrode.
＜1-4: the flat shape of pixel electrode 〉
Below, on one side with reference to Fig. 5, describe the flat shape of pixel electrode 9a on one side in detail, result from the effect of the transverse electric field between pixel electrode 9a when simultaneously the driving of lowering liquid-crystal apparatus 1 being described.Also have, in the present embodiment, become simple in order to make explanation, adjacent 4 pixel electrodes that set are example among the pixel electrode 9a with enumerating.
In Fig. 5, be disposed at pixel electrode 9a1-1 upper left in the accompanying drawing among a plurality of pixel electrode 9a and be disposed at the example of " the 1st pixel electrode " in each of pixel electrode 9a1-2 the 1st invention of the present invention naturally of bottom right in the accompanying drawing.Be disposed at the pixel electrode 9a2-1 of lower-left in the accompanying drawing among a plurality of pixel electrode 9a and be disposed at the example of " the 2nd pixel electrode " in each of pixel electrode 9a2-2 upper right in the accompanying drawing the 1st invention of the present invention naturally.Here, be conceived to pixel electrode 9a1-1 and 9a2-1 especially.Also have, as what describe in detail below, when the driving of liquid-crystal apparatus 1, to pixel electrode 9a1-1 and 9a2-1 separately, supplying with the current potential that supplies to counter electrode 21 is the mutual different current potential of benchmark, polarity.
The profile of pixel electrode 9a1-1 is an essentially rectangular, and the 1st edge part 29a1 of pixel-oriented electrode 9a2-1 directions X in the accompanying drawing extends among 4 edge parts, and in its part recess 501 is set.The profile of pixel electrode 9a2-1 is identical with pixel electrode 9a1-1 to be essentially rectangular, and the 2nd edge part 29a2 of pixel-oriented electrode 9a1-1 directions X in the accompanying drawing extends among 4 edge parts, and in its part protuberance 502 is set.Protuberance 502 extends towards the 1st edge part 29a1 from the 2nd edge part 29a2 with the region R that is limited by recess 501 with overlapping.
Thereby, the recess 501 and the protuberance 502 that have the conduct irregular part different separately of the 1st edge part 29a1 of devices spaced apart and mutual subtend and the 2nd edge part 29a2 with the 2nd edge part 29a1 that extends along directions X and the 2nd edge part 29a2.Because according to this recess 501 and protuberance 502, the electric-field intensity distribution that when the driving of liquid-crystal apparatus 1, produces because of pixel electrode 9a1-1 and 9a2-1 potential difference (PD) separately, got muddled along directions X with partly blocking, so can make this electric-field intensity distribution become inhomogeneous, can lower the transverse electric field that produces between pixel electrode 9a1-1 and 9a2-1.
The flat shape of recess 501 and protuberance 502 both can be mutual identical as present embodiment, also can be different mutually.Particularly as present embodiment, when recess 501 and protuberance 502 have identical mutually flat shape, to compare with the situation that recess and protuberance is formed different mutually flat shapes, the figure that is easy to carry out pixel electrode 9a1-1 and 9a2-1 forms.In addition, the interval that also is easy to carry out between recess 501 and the protuberance 502 is set.That is to say, can form pixel electrode 9a1-1 and 9a2-1 in the following manner, this mode is, pixel electrode 9a1-1 and 9a2-1 size is separately increased as far as possible, and recess 501 and protuberance 502 do not contact mutually.Thereby, do not take place to descend because of the aperture opening ratio that the interval between the expansion pixel electrode produces, can suppress decrease of contrast.
In addition, if at the area coincidence that is limited by recess 501 protuberance 502, even if then recess 501 and protuberance 502 are different sizes mutually, also can lower the transverse electric field that produces between pixel electrode 9a1-1 and 9a2-1.In addition, because being set to separately of recess 501 and protuberance 502, get final product at the area coincidence protuberance 502 that is limited by recess 501, so, also can obtain lowering the effect of transverse electric field even be set to the central portion of each pixel electrode edge part and arbitrary part of end along directions X.
The liquid-crystal apparatus 1 related according to present embodiment, because by making electric-field intensity distribution between pixel electrode 9a1-1 and the 9a2-1 uneven degree that becomes, at the 1st edge part 29a1 and recess is set the 2nd edge part 29a2 at least a portion separately and protuberance gets final product, so the decline of aperture opening ratio can be suppressed in fact not in the scope that the contrast to image quality exerts an influence, the decline of this aperture opening ratio is producing when mutual adjacent pixel electrodes lowers transverse electric field at interval by expanding.
Like this, according to recess 501 and protuberance 502, compare with the situation that recess 501 and protuberance 502 are not set, that is to say with the 1st edge part 29a1 and the 2nd edge part 29a2 and compare, can lower the transverse electric field that produces between adjacent pixel electrode 9a1-1 that sets and 9a2-1 along the directions X situation of extending that is parallel to each other.
Also have, in the present embodiment, 4 edge parts at pixel electrode 9a1-1 are provided with recess 501, can lower the transverse electric field that produces between pixel electrode 9a1-1 and following 4 pixel electrodes, and these 4 pixel electrodes and pixel electrode 9a1-1 be adjacent making it towards these 4 edge parts separately mutually.Pixel electrode 9a1-2,9a2-1 and 9a2-2 are also identical with pixel electrode 9a1-1, can lower these pixel electrodes and with 4 mutually adjacent pixel electrodes of these pixel electrodes between the transverse electric field that produces.
＜1-5: method of driving electro-optical device 〉
Below, on one side with reference to Fig. 7, driving method one example of liquid-crystal apparatus 1 is described on one side.Here, in the present embodiment, adopted the anti-phase type of drive of 1H as an example of the type of drive of liquid-crystal apparatus 1.Fig. 7 is the used accompanying drawing of duty of the anti-phase type of drive of 1H of electro-optical device in the explanation present embodiment.Also have, the convenience in order to illustrate in Fig. 7 is made as rectangle with the flat shape of pixel electrode.
In Fig. 7, a plurality of pixel electrode 9a that directions X and Y direction are arranged in the accompanying drawing at n (wherein, n is a natural number) or the image of n frame show during in, by each is gone to pressing Y direction pixel electrode 9a arranged side by side, apply the polarity voltage different of relative datum voltage, pixel region is driven with the state that applies the liquid crystal drive voltage of opposite polarity by each row with adjacent row.Its status list is shown among Fig. 7 (a).During the image of ensuing n+1 field or n+1 frame shows, shown in Fig. 7 (b), make the polarity of liquid crystal drive voltage anti-phase.After n+2 field or the n+2 frame, the period of state shown in Fig. 7 (a) and Fig. 7 (b) occurs repeatedly.Like this, the polarity that applies voltage of liquid crystal layer 50 has been carried out periodically anti-phase, then prevented from liquid crystal is applied DC voltage, suppressed the deterioration of liquid crystal if make.In addition, because that every enforcement of electrode 9a according to pixels applies the polarity of voltage is opposite, thereby can lowers and crosstalk and glimmer.
Here, suppose (that is to say by the Y direction is adjacent, belong to different row) pixel electrode 9a1 and 9a2 when recess 501 and protuberance 502 not being set respectively separately, when just the edge part of subtend extends by a direction mutually among the edge part of these pixel electrodes, because pixel electrode 9a1 and 9a2 are to drive with respect to reference voltage, the mutually opposite current potential of polarity, so zone C 1 betwixt is called as the component part of electric field parallel with real estate that have of transverse electric field.In addition, also between pixel electrode 9a1 that belongs to different lines among the pixel electrode 9a of adjacent row and 9a2 transverse electric field takes place.Thereby, when the work of liquid-crystal apparatus 1, in the accompanying drawings with the regional integration generation transverse electric field shown in the C1 along the zone that sweep trace 11a extends.Like this, because of transverse electric field hinders the restriction at liquid crystal molecules tilt angle, when showing dynamic image, produce afterimage and conditions of streaking.
More particularly, as shown in Figure 8, pixel electrode 9a2 among mutual adjacent pixel electrodes 9a1 and the 9a2 is being applied driving voltage V and pixel electrode 9a1 (for example is in non-driven state, when the current potential of pixel electrode 9a1 is consistent with the current potential of counter electrode 21) time, between pixel electrode 9a1 and 9a2, because of the potential difference (PD) of these pixel electrodes produces transverse electric field E.Because this transverse electric field E, form region D 3, region D 1 and region D 2 at the pixel electrode 9a2 that is in driving condition and 21 potential difference (PD) of counter electrode corresponding to these electrodes, this region D 3 is as the pitch angle of the former state of orientation restriction liquid crystal 50a that should take, this region D 1 produces reversal dip because of transverse electric field E in liquid crystal, this region D 2 limits the pitch angle of liquid crystal 50a as unsettled state of orientation between region D 1 and D3.Because the existence of this region D 1 and D2, thereby to consider when liquid-crystal apparatus shows dynamic image, to produce the not good situation that afterimage or conditions of streaking etc. show.
Therefore, pixel electrode 9a1 and the 9a2 with present embodiment peculiar flat shape illustrated according to reference Fig. 5 can weaken the transverse electric field that produces between the adjacent pixel electrode that sets.In addition, the aperture opening ratio that produces because of the expansion between pixel electrode not taking place descends.
Also have, when driving electro-optical device involved in the present invention, type of drive is not defined as the related electro-optical device type of drive of present embodiment, also can be to make other type of drive such as anti-phase anti-phase type of drive of point of current potential by each adjacent pixel electrode, so long as can between adjacent pixel electrodes, produce the type of drive of transverse electric field, for any type of drive, can both obtain lowering the effect of transverse electric field.
As top illustrated, the electro-optical device related according to present embodiment, because can suppress the decline of aperture opening ratio, weaken transverse electric field simultaneously, so can suppress because of the aperture opening ratio contrast cause that descends descends, lower the not good situation that the afterimage that causes because of transverse electric field and conditions of streaking etc. show simultaneously.
＜the 2 embodiment 〉
Below, on one side with reference to Fig. 9 to Figure 12, the electro-optical device that present embodiment is related is described on one side.Also have, below, for will omitting diagram, and omit detailed explanation with the related identical part of electro-optical device of the 1st embodiment.In addition, the related electro-optical device of present embodiment has the structure identical with cross section structure shown in Figure 6, and in the related electro-optical device of present embodiment, adopt the anti-phase driving of vertical row (the anti-phase driving of 1S) or put the type of drive of anti-phase driving etc., in the anti-phase driving of this vertical row, to in the 2nd invention of the present invention as " image signal line " separately among the data line 6a of an example every adjacent mutually data line supply with polarity different picture signal mutually, just supply with current potential with respect to counter electrode 21, polarity is different picture signals mutually, this is put in the anti-phase driving, and each adjacent mutually pixel is supplied with polarity different picture signal mutually.
＜2-1: the concrete structure of electro-optical device 〉
On one side with reference to Fig. 9 and Figure 10, on one side explanation as liquid-crystal apparatus 601 concrete structures of related electro-optical device one example of present embodiment.
At first, Yi Bian with reference to Fig. 9 and Figure 10, Yi Bian describe for formed conducting film 92 between the mutual adjacent pixel electrodes 9a, the effect that lowers the transverse electric field that produces between mutual adjacent pixel electrodes 9a when the driving of liquid-crystal apparatus 601 is described simultaneously.Figure 10 is X-X ' sectional view of Fig. 9.Also have, in the present embodiment, become simple, enumerate that adjacent 4 pixel electrodes that set are example among the pixel electrode 9a in order to make explanation.
In Fig. 9 and Figure 10, liquid-crystal apparatus 601 possesses: pixel electrode 9a1 and 9a2 are adjacent mutually along directions X; With conducting film 92, be formed in the zone of between these pixel electrodes, extending." the 1st pixel electrode " in each of pixel electrode 9a1 and 9a2 the 2nd invention of the present invention naturally reaches an example of " the 2nd pixel electrode ".Also have, as what describe in detail below, when the driving of liquid-crystal apparatus 601, to pixel electrode 9a1 and 9a2 separately, supplying with the current potential that supplies to counter electrode 21 is the mutual different current potential of benchmark, polarity.
The profile of pixel electrode 9a1 and 9a2 is an essentially rectangular, and directions X separates mutual interval and be adjacent in the accompanying drawing.The regional a part of width W 1 that separates pixel electrode 9a1 and 9a2 is expanded to some extent than the width W 2 of these other parts of zone, and with this expansion after area coincidence ground with pixel electrode 9a1 and 9a2 with one deck formation conducting film 92.Thereby,, also can guarantee the space that forms conducting film 92 on the layer of pixel electrode 9a1 and 9a2 forming as substrate even when the interval of narrower setting pixel electrode 9a1 and 9a2 for the contrast that improves display image.In addition, because can adopt the film identical to form operation with the operation that forms pixel electrode 9a, use ITO to form conducting film 92 in the same manner with pixel electrode 9a, so compare with the situation that adopts the operation different to form conducting film 92, can make the manufacture process of liquid-crystal apparatus 601 become simple with the operation that forms pixel electrode 9a.
Form island conducting film 92 and the area coincidence that between pixel electrode 9a1 and 9a2, extends, and be electrically connected to data line 6a by the contact hole 91 as " connecting portion " example in the 2nd invention of the present invention.Also have, contact hole 91 forms, and in the zone that is limited by the notch part 93 that is formed at capacitance wiring 400, connects the 3rd interlayer dielectric 43 and the 4th interlayer dielectric 44.Thereby 91 couples of data line 6a of contact hole and conducting film 92 are electrically connected mutually, while and capacitance wiring 400 electrical isolations.
Conducting film 92 is supplied to the current potential of the picture signal that data line 6a is supplied with when the driving of liquid-crystal apparatus 601.The current potential of this picture signal is an example of " the 1st current potential " in the 2nd invention of the present invention.Contact hole 91 looks from pixel electrode 9a1 and 9a2, is electrically connected to the part that is positioned at the external electric trackside of data line 6a.The current potential of the conducting film 92 that is electrically connected with data line 6a no matter be formed in each pixel pixel switch with the switch work of TFT30 how, all be maintained in the current potential of picture signal, and different with the current potential of each the pixel electrode 9a that sets with the work of TFT30 corresponding to pixel switch.
According to this conducting film 92, can lower potential difference (PD) corresponding to pixel electrode 9a1 and 9a2 and result from transverse electric field between these pixel electrodes.More particularly, can utilize the current potential that conducting film 92 is supplied with, part weakens it with blocking the electric-field intensity distribution that produces between pixel electrode 9a1 and 9a2, can lower the transverse electric field that produces between these pixel electrodes.
Particularly, in the present embodiment, the current potential that supplies to conducting film 92 is and the different current potential of common potential LCC that supplies to the counter electrode 21 of conducting film 92 subtends.When the driving of liquid-crystal apparatus 601,, produce longitudinal electric field Ev at conducting film 92 and 21 of counter electrodes corresponding to conducting film 92 and counter electrode 21 potential difference (PD) separately.The liquid crystal that is positioned between pixel electrode 9a1 and 9a2 utilizes longitudinal electric field Ev to limit state of orientation.
Thereby the liquid crystal that utilizes longitudinal electric field Ev to limit state of orientation can lower because of interact not good situation in the demonstration that produces of the state of orientation that is positioned at pixel electrode 9a1 and the 9a2 liquid crystal on separately.More particularly, can utilize longitudinal electric field Ev, lower the transverse electric field that produces between pixel electrode 9a1 and 9a2, and can disconnect not good the influencing each other of orientation by utilizing longitudinal electric field Ev to limit the liquid crystal of state of orientation because of being produced in the liquid crystal of transverse electric field on pixel electrode 9a1 and 9a2.In view of the above, can lower the not good situation in the demonstration of the conditions of streaking that produces when showing dynamic image or afterimage and so on, improve the display performance of liquid-crystal apparatus 601.
Also have, conducting film 92 forms, and the area coincidence that extends between pixel electrode 9a1 and 9a2 gets final product, and also can not be formed at same one deck with pixel electrode 9a.In the present embodiment, particularly because conducting film 92 is formed into the tight downside of the alignment films 16 among the sandwich construction of tft array substrate 10, so compare with the situation that forms conducting film 92 at the lower layer side of pixel electrode 9a, the distance of counter electrode 21 and conducting film 92 diminishes.Thereby corresponding to the distance of counter electrode 21 and conducting film 92, the electric field intensity of the longitudinal electric field Ev of conducting film 92 and 21 generations of counter electrode also increases relatively, and the effect that lowers conditions of streaking and afterimage is further increased.
In addition, utilize longitudinal electric field Ev to limit the liquid crystal of orientation, just be not used in the zone that image shows, so each aperture ratio of pixels is descended because be positioned at non-open area between pixel electrode 9a1 and 9a2.Thereby, the decline of aperture opening ratio can be suppressed in fact not in the scope that the contrast to image quality exerts an influence.
In addition, the flat shape of conducting film 92 is not defined as rectangle, can be circular or various polygons or irregular flat shape yet.
Like this, the electro-optical device related according to present embodiment, because can suppress the decline of aperture opening ratio, weaken transverse electric field simultaneously, so can suppress because of the aperture opening ratio contrast cause that descends descends, lower the not good situation that the afterimage that causes because of transverse electric field and conditions of streaking etc. show simultaneously.
＜2-2: method of driving electro-optical device 〉
Below, on one side with reference to Figure 11, driving method one example of liquid-crystal apparatus 601 is described on one side.Here, in the present embodiment, adopted the anti-phase type of drive of 1S as an example of liquid-crystal apparatus 601 type of drive.Figure 11 is the used accompanying drawing of duty of the anti-phase type of drive of 1S of electro-optical device in the explanation present embodiment.Also have, the convenience in order to illustrate in Figure 11 is made as rectangle with the flat shape of pixel electrode.
In Figure 11, a plurality of pixel electrode 9a that directions X and Y direction are arranged in the accompanying drawing at n (wherein, n is a natural number) or the image of n frame show during in, by each is gone to pressing X-direction pixel electrode 9a arranged side by side, apply the polarity of relative datum voltage, the voltage different, pixel region is driven under the state of the liquid crystal drive voltage that is applied in opposite polarity by every row with adjacent row.Its status list is shown among Figure 11 (a).During the image of ensuing n+1 field or n+1 frame shows, shown in Figure 11 (b), make the polarity of liquid crystal drive voltage anti-phase.After n+2 field or the n+2 frame, the period of state shown in Figure 11 (a) and Figure 11 (b) occurs repeatedly.Like this, the polarity that applies voltage of liquid crystal layer 50 has been carried out periodically anti-phase, then can prevent from liquid crystal is applied DC voltage, suppressed the deterioration of liquid crystal if make.In addition, because according to pixels every row of electrode 9a make the polarity that applies voltage opposite, thereby can lower and crosstalk and glimmer.
Here, suppose (that is to say by directions X is adjacent, belong to different row) pixel electrode 9a1 and 9a2 between when above-mentioned conducting film 92 is not set, because pixel electrode 9a1 and 9a2 are to drive with respect to reference voltage, the mutually opposite current potential of polarity, so zone C 2 betwixt is called as the component part of electric field parallel with real estate that have of transverse electric field.In addition, also between the pixel electrode 9a that belongs to different rows among the pixel electrode 9a of adjacent row transverse electric field takes place.Thereby, when the work of liquid-crystal apparatus 601, in the accompanying drawings with all transverse electric fields that takes place in the zone shown in the C2 along the zone that data line 6a extends.Original state is constant like this, because of transverse electric field hinders the restriction at liquid crystal molecules tilt angle, produces afterimage and conditions of streaking when showing dynamic image.
More particularly, as shown in figure 12, pixel electrode 9a2 among mutual adjacent pixel electrodes 9a1 and the 9a2 is being applied driving voltage V and pixel electrode 9a1 (for example is in non-driven state, when the current potential of pixel electrode 9a1 is consistent with the current potential of counter electrode 21) time, between pixel electrode 9a1 and 9a2, because of the potential difference (PD) of these pixel electrodes produces transverse electric field Eh.Because this transverse electric field Eh, form region D 3, region D 1 and region D 2 at the pixel electrode 9a2 that is in driving condition and 21 potential difference (PD) of counter electrode corresponding to these electrodes, in this region D 3, pitch angle as the former state of orientation restriction liquid crystal 50a that should take, in this region D 1, because of transverse electric field Eh produces reversal dip in liquid crystal, in this region D 2, between region D 1 and D3, limit the pitch angle of liquid crystal 50a as unsettled state of orientation.Because the existence of this region D 1 and D2, thereby to consider when liquid-crystal apparatus 601 shows dynamic image, to produce the not good situation that afterimage or conditions of streaking etc. show.
Therefore, according to reference Fig. 9 and the illustrated related peculiar structure of electro-optical device of present embodiment of Figure 10, can weaken the transverse electric field that produces between the adjacent pixel electrode that sets.In addition, though on each pixel electrode remaining region D shown in Figure 12 1 and D2, then mutually between adjacent pixels region D 1 and D2 link to each other mutually, can in the scope of a plurality of pixels, not form the unsettled zone of state of orientation of liquid crystal.Thereby, the electro-optical device related, the poor display of the conditions of streaking that produces in the time of can obviously lowering the demonstration dynamic image etc. according to present embodiment.In addition, the electro-optical device related according to present embodiment, the aperture opening ratio that can not take place to produce because of the expansion between pixel electrode descends.
Also have, type of drive when driving the related electro-optical device of present embodiment, be not defined as above-mentioned type of drive, also can be to make other type of drive such as anti-phase anti-phase type of drive of point of current potential by each adjacent pixel electrode, so long as can between adjacent pixel electrodes, produce the type of drive of transverse electric field, for any type of drive, can both obtain lowering the effect of transverse electric field.
As top illustrated, the electro-optical device related according to present embodiment, because can suppress the decline of aperture opening ratio, weaken transverse electric field simultaneously, so can suppress because of the aperture opening ratio contrast cause that descends descends, lower the not good situation that the afterimage that causes because of transverse electric field and conditions of streaking etc. show simultaneously.
＜3: electronic equipment 〉
Below, be used in situation in the electronic equipment for the related electro-optical device of the 1st or the 2nd embodiment that will describe in detail above, describe.
Here, for the liquid-crystal apparatus of this electro-optical device one example as the projector that light valve uses, describe.Figure 13 is the vertical view of expression projector architecture example.As shown in figure 13, in projector 1100 inside, the lamp assembly 1102 that is made of white light sources such as Halogen lamp LEDs is set.From emitted projected light 4 catoptrons 1106 and 2 dichronic mirrors 1108 of this lamp assembly 1102 by being disposed in the light pipe, be separated into 3 primary colors of RGB, incide liquid-crystal apparatus 100R, 100B and the 100G as light valve corresponding with each primary colors.The structure of liquid- crystal apparatus 100R, 100B and 100G is identical with above-mentioned liquid-crystal apparatus, modulation is supplied with from imaging signal processing circuit in separately R, G, B primary signal.Incide colour splitting prism 1112 by the light after these liquid-crystal apparatus modulation from 3 directions.By this colour splitting prism 1112, the light of R and B is bent into 90 degree, and the light of G is kept straight on the other hand.Whereby, synthetic image of all kinds, and by projecting lens 1114, to projection of color images such as screens 1120.
Above, though a concrete example as electro-optical device of the present invention, enumerating liquid-crystal apparatus is illustrated, but electro-optical device of the present invention in addition, for example can also or use display device (the Field Emission Display and the Surface-Conduction Electron-Emitter Display of evaporation of electron element as the electrophoretic apparatus of electronic paper etc., field-emitter display and surface conductive type electron emission display device) etc., realize.In addition, electro-optical device involved in the present invention can also be used in television receiver, view finder formula or monitors video tape recorder, automobile navigation apparatus, pager, electronic notebook, desk-top electronic calculator, word processor, workstation, television telephone set, the POS terminal of direct viewing type and possess in the various electronic equipments such as device of touch panel except projector described above.
Also have, the present invention is not limited to above-mentioned embodiment, and can be in the scope of not violating the invention aim totally understanded from technical scheme and instructions or design, suitably change, and follow the electro-optical device of this change and possess the electronic equipment of this electro-optical device, also all be included in the technical scope of the present invention.
Claims (11)
1. an electro-optical device is characterized by,
Possess:
A pair of substrate;
Electro-optical substance, it is held between above-mentioned a pair of substrate; And
The 1st pixel electrode and the 2nd pixel electrode, it is on a side's of above-mentioned a pair of substrate substrate, and from the direction along the normal of the real estate of an above-mentioned side's substrate, devices spaced apart is adjacent to set, and is supplied to different current potential mutually;
Above-mentioned the 1st pixel electrode has recess, and this recess is arranged at least a portion towards the 1st edge part of above-mentioned the 2nd pixel electrode among the edge part of above-mentioned the 1st pixel electrode,
Above-mentioned the 2nd pixel electrode has protuberance, this protuberance is arranged at least a portion towards the 2nd edge part of above-mentioned the 1st pixel electrode among the edge part of above-mentioned the 2nd pixel electrode, and from above-mentioned the 2nd edge part with outstanding by the mode of the area coincidence that above-mentioned recess was limited.
2. electro-optical device according to claim 1 is characterized by:
Above-mentioned recess and raised part have identical flat shape mutually.
3. electro-optical device according to claim 1 is characterized by:
Possess counter electrode, this counter electrode is formed on the opposing party's the substrate of above-mentioned a pair of substrate, and with above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode subtend,
Above-mentioned mutually different current potential is to be benchmark, polarity different current potential mutually with the common potential that supplies to above-mentioned counter electrode.
4. an electro-optical device is characterized by,
Possess:
A pair of substrate;
Electro-optical substance, it is held between above-mentioned a pair of substrate;
The 1st pixel electrode and the 2nd pixel electrode, it is on a side's of above-mentioned a pair of substrate substrate, and from the direction along the normal of the real estate of an above-mentioned side's substrate, devices spaced apart is adjacent to set, and is supplied to different current potential mutually; And
Conducting film, its with and the mode of the area coincidence that between above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode, extends form island, be supplied to and above-mentioned the 1st pixel electrode and the 1st different current potential of above-mentioned the 2nd pixel electrode current potential separately.
5. electro-optical device according to claim 4 is characterized by:
Possess counter electrode, this counter electrode is formed on the opposing party's the substrate of above-mentioned a pair of substrate, and with above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode subtend,
Above-mentioned the 1st current potential is the current potential different with the common potential that supplies to above-mentioned counter electrode.
6. electro-optical device according to claim 5 is characterized by:
Above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode current potential separately are to be benchmark, polarity different current potential mutually with above-mentioned common potential.
7. electro-optical device according to claim 4 is characterized by:
Above-mentioned conducting film is formed at and above-mentioned the 1st pixel electrode and the same one deck of above-mentioned the 2nd pixel electrode on an above-mentioned side's substrate.
8. electro-optical device according to claim 7 is characterized by:
By at above-mentioned same one deck, the expansion of above-mentioned compartment ground is formed above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode, expand the width of the part of above-mentioned zone.
9. electro-optical device according to claim 4 is characterized by:
On an above-mentioned side's substrate, possess: image signal line, it is formed at the lower layer side of above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode, to the supply picture signal separately of above-mentioned the 1st pixel electrode and above-mentioned the 2nd pixel electrode; And connecting portion, it is electrically connected above-mentioned image signal line and above-mentioned conducting film.
10. electronic equipment is characterized by:
Possesses the described electro-optical device of claim 1.
11. an electronic equipment is characterized by:
Possesses the described electro-optical device of claim 4.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006277235A JP2008096616A (en) | 2006-10-11 | 2006-10-11 | Electro-optical device and electronic device |
| JP277235/2006 | 2006-10-11 | ||
| JP284689/2006 | 2006-10-19 |
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| Publication Number | Publication Date |
|---|---|
| CN101162334A true CN101162334A (en) | 2008-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101540007A Pending CN101162334A (en) | 2006-10-11 | 2007-10-11 | Electro-optic device and electronic device |
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| Country | Link |
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| JP (1) | JP2008096616A (en) |
| CN (1) | CN101162334A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102193255A (en) * | 2010-03-19 | 2011-09-21 | 卡西欧计算机株式会社 | Liquid crystal display apparatus |
| CN103827887A (en) * | 2011-09-30 | 2014-05-28 | 苹果公司 | Optical system and method to mimic zero-border display |
| CN105209970A (en) * | 2013-05-15 | 2015-12-30 | 夏普株式会社 | Liquid crystal display device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2511647C1 (en) | 2010-02-24 | 2014-04-10 | Шарп Кабусики Кайся | Liquid crystal display panel and liquid crystal display device |
| JP6126775B2 (en) * | 2010-06-25 | 2017-05-10 | 株式会社半導体エネルギー研究所 | Display device |
-
2006
- 2006-10-11 JP JP2006277235A patent/JP2008096616A/en active Pending
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2007
- 2007-10-11 CN CNA2007101540007A patent/CN101162334A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102193255A (en) * | 2010-03-19 | 2011-09-21 | 卡西欧计算机株式会社 | Liquid crystal display apparatus |
| CN103827887A (en) * | 2011-09-30 | 2014-05-28 | 苹果公司 | Optical system and method to mimic zero-border display |
| US10109232B2 (en) | 2011-09-30 | 2018-10-23 | Apple Inc. | Optical system and method to mimic zero-border display |
| US10777129B2 (en) | 2011-09-30 | 2020-09-15 | Apple Inc. | Optical system and method to mimic zero-border display |
| CN105209970A (en) * | 2013-05-15 | 2015-12-30 | 夏普株式会社 | Liquid crystal display device |
| CN105209970B (en) * | 2013-05-15 | 2018-04-06 | 夏普株式会社 | Liquid crystal display device |
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| Publication number | Publication date |
|---|---|
| JP2008096616A (en) | 2008-04-24 |
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Application publication date: 20080416 |