CN101150030B - Method for manufacturing silicon microchannel plate secondary electron emission layer - Google Patents
Method for manufacturing silicon microchannel plate secondary electron emission layer Download PDFInfo
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- CN101150030B CN101150030B CN2007100756964A CN200710075696A CN101150030B CN 101150030 B CN101150030 B CN 101150030B CN 2007100756964 A CN2007100756964 A CN 2007100756964A CN 200710075696 A CN200710075696 A CN 200710075696A CN 101150030 B CN101150030 B CN 101150030B
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- microchannel plate
- secondary electron
- glacial acetic
- emission layer
- electron emission
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Abstract
This invention discloses a method for processing secondary electronic emission layers of silicon micro-channel boards including: 1, confecting MgO glacial acetic acid solution in light of a proportion, 2, putting a silicon micro-channel board in the solution to be shaked with supersonic waves for a period of time and enters into the channels fully and is adsorbed on the internal surface, 3, heating the board in a vacuum device to solidify the MgO on the surface.
Description
Technical field
The present invention relates to the electron tube technical field, be specifically related to the method for a kind of making silicon microchannel plate (Si-MCP) secondary electron emission layer.
Background technology
Microchannel plate (MCP) is the electron tube of the continuous electron multiplication of a kind of two dimension, is arranged by certain geometrical pattern by many passages with continuous electron multiplication ability to form.When in its input, when the output two ends add certain electric field, just can extremely faint two-dimentional electronic image be doubled or amplify.Because microchannel plate itself has certain quantum detection efficient to most of charged particles, part high energy particle and short wavelength light (ultraviolet ray, X ray etc.), so can directly be used for surveying.Theoretically, microchannel plate can be implemented effectively to survey to all particles and electromagnetic radiation, thereby microchannel plate has a wide range of applications in lll night vision, Aero-Space detection, nuclear detection and large scientific instrument field.
Since the patent of CGW8161 glass is made in Dalton in 1958 application 50 in the period of, standard silicon silicate glass microchannel plate manufacturing process has obtained develop rapidly, and forms in many companies of states such as American and Britain, method, lotus, the former Soviet Union and to produce in batches.Microchannel plate glass has just formed surface conductance layer or electron emission layer after handling through hydrogen reducing.This so-called hydrogen reducing technology developed comparative maturity, be still commercial practical and technical methods at present with microchannel plate.
Traditional MCP process using glass multifilament draws its technological process of (GMD) technology as shown in Figure 1, at first form rod pipe assembly together by the sour molten barium boron glass plug of alkali lead silicate glass foreskin and cooperation with it, heating is drawn into monofilament through fusing in heating furnace.Monofilament is pressed certain-length cut off, line up the tow of hexagonal section, in stove, heat, draw out the hexagon multifilament.These multifilament are piled up with hexagonal array again, and the heating fusion pressure promptly can be made into the microchannel plate base under vacuum.Slab is thinly sliced, after chemical cold working such as round as a ball, grinding, polishing, put into dilute acid soln, molten clean core glass, form array formula thin slice, reduction reaction is carried out in heating in hydrogen then, make lead from lead oxide, be reduced into lead, make the MCP channel inner surface become the continuous dynode of secondary and multiplication.
Yet silicate glass MCP is because material is formed the restriction with technology, has short, unsurmountable defective such as dynamic range is little, spatial resolving power is limited, signal to noise ratio is lower in useful life.From each big scientific research institution, colleges and universities, particularly organizational equipment aspect feedack is seen, the performance of existing MCP has limited its application to a great extent, and is particularly in space exploration, lll night vision, large scale display field, more urgent to the demand of high-performance MCP.In order to improve the performance of MCP, realize low noise, long-life, extra small bore diameter, high output, large tracts of land, the contour performance MCP of no ion feedback film, the improvement in performance to MCP has proposed requirement from different aspects in a lot of research institutions.
In order to realize the improvement of MCP performance, body electric conducting material phosphate glass MCP has appearred.Fig. 2 is seen in its technological process.Theory analysis shows: make MCP with phosphate glass, be equivalent to might have high-gain fully under the voltage that common image intensifier has.In addition, phosphate glass has more uniform composition, and after the hydrogen roasting, the surperficial contained hydrogen ratio of phosphate glass is wanted much less through the surperficial contained hydrogen of traditional MCP glass of similar processing.The minimizing of hydrogen content makes new MCP feed back than the ion that the MCP that is made by traditional MCP glass will have still less.The minimizing of ion feedback increases the useful life of device, and noise reduces.But, because the chemistry of phosphate glass and physical property have very big difference with traditional MCP glass, need to break through the new treatment technology of restriction exploitation of traditional handicraft, also do not satisfy the phosphate MCP product sale of instructions for use at present.And, existing greatest problem is that phosphate glass MCP remains and needs glass preparation technology to form microwell array, therefore though can overcome some defective of traditional silicon silicate glass MCP, still exist because how much noises, the apertures that preparation technology brings can't do that little, area can't be done greatly etc. defective.
The early 1990s, people such as the J.R.Horton of U.S. Galileo electro-optical company propose to adopt single crystal silicon material, utilize the imagination of advanced process for fabrication of semiconductor device and micrometer/nanometer process technology development silicon microchannel plate.Compare with traditional handicraft, new technology can be selected base material and dynode material to separate, microwell array and continuous dynode are formed technology to be separated, thoroughly solved drawing of traditional glass MCP multifilament and hydrogen reduction and handled the contradiction that pins down mutually, also given and adopt the high-purity material and the making secondary electron emission layer of adopting new technology that condition is provided.The analysis showed that silicon MCP and traditional glass MCP have relatively that the passage aperture is little, large working area is long-pending, high dynamic range, high geometric fidelity, wide spectral response range, advantage such as high temperature resistant.At first according to requirement of experiment, design is also made the microwell array mask plate, and silicon single crystal flake is carried out grinding and polishing, utilizes the CVD technology to deposit SiO on silicon chip
2Layer, and carry out photoetching, etching, the mask pattern that designs is copied to SiO
2On the layer, form the SiO of silicon base etching
2Mask afterwards, adopts deep-etching micro hole, directed ion etching technology front, and back of the body chamber is lost at the back side deeply, makes the deep hole break-through etch microwell array.After the microchannel plate microwell array completes, can bear certain field intensity, thereby realize electron multiplication, at first silicon chip be carried out clean and carry out abundant oxidation, form SiO in order to make silicon microchannel plate
2Insulating barrier.Utilize the CVD technology in the microchannel, to deposit the emission layer of the high secondary electron yield of one deck again.
As seen from the above analysis, the technology of preparation MCP mainly contains three kinds at present, preceding two kinds of technology are owing to all adopted glass preparation technology, and it utilizes the corresponding method for preparing secondary electron emission layer of hydrogen reduction that its unsurmountable defective is arranged, and also can't be applied directly in the silicon MCP technology.The third technology---silicon microchannel plate is in order to realize electron multiplication, and available method is to utilize the CVD technology to deposit the emission layer of the high secondary electron yield of one deck in the microchannel at present.But CVD technical equipment costliness, the specification requirement height, whole preparation time is longer relatively.In order to explore the feasibility of batch process, need practicability, that can prepare high secondary more emission layer technology.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of making silicon microchannel plate secondary electron emission layer, overcome the method for existing CVD fabrication techniques silicon microchannel plate secondary electron emission layer, making apparatus costliness, specification requirement height, the long defective of preparation time.
The present invention solves the problems of the technologies described above the technical scheme that is adopted to be:
A kind of method of making silicon microchannel plate secondary electron emission layer comprises step:
A1, prepare the magnesium oxide glacial acetic acid solution according to a certain percentage;
A2, silicon microchannel plate is positioned in the described magnesium oxide glacial acetic acid solution, adds the described magnesium oxide glacial acetic acid solution a period of time of shaking, make solution fully enter the microchannel and be adsorbed in inner surface with ultrasonic wave;
A3, in vacuum plant, heat silicon microchannel plate, solidify its surperficial magnesium oxide.
The method of described making silicon microchannel plate secondary electron emission layer, in the described steps A 1, the allocation ratio of described magnesium oxide glacial acetic acid solution is made as 1 (MgO): 30 (glacial acetic acids).
The method of described making silicon microchannel plate secondary electron emission layer, in the described steps A 2, the time that adds the described magnesium oxide glacial acetic acid solution of shaking with ultrasonic wave was made as 3～5 minutes.
The method of described making silicon microchannel plate secondary electron emission layer, in the described steps A 3, the temperature of heating silicon microchannel plate is made as 500 ℃～800 ℃.
The method of described making silicon microchannel plate secondary electron emission layer comprises step after the described steps A 3: at the upper and lower surface evaporation layer of metal electrode of described silicon microchannel plate.
Beneficial effect of the present invention is: because the present invention adopts magnesium oxide as secondary electron emission material, make certain density MgO glacial acetic acid solution fully also be full of silicon micro-channel equably and be adsorbed in its inner surface; By hot setting in a vacuum, make the MgO material in silicon micro-channel, form firm secondary electron emission layer, having overcome prior art can't be with the problem of MgO material evaporation in the silicon micro-channel; The present device cost is low, and technical process is simple, and technical difficulty is little, and whole preparation time is shorter relatively, and the material secondary electron emission coefficiency height that is deposited is a much progress of making the silicon microchannel plate secondary electron emission layer method.
Description of drawings
Fig. 1 makes the process chart of MCP for prior art adopts glass multifilament drawing method;
Fig. 2 makes the process chart of MCP for prior art adopts phosphate glass;
Fig. 3 is a silicon microchannel plate microstructure photo of the present invention;
Fig. 4 is a high vacuum integrated test system photo of the present invention;
Fig. 5 is the gain and the gain uniformity schematic diagram of test silicon microchannel plate of the present invention.
Embodiment
With embodiment the present invention is described in further detail with reference to the accompanying drawings below:
Consider that the MgO material has high secondary electron yield, secondary electron yield δ value is about about 4.5, and the MgO material has good thermal stability, can be directly exposed in the atmosphere, can be dissolved in the specific solvent and chemical reaction does not take place; Therefore, the present invention adopts MgO as secondary electron emission material.But,, to therefore can not adopt conventional vacuum coating method at 3000 ℃ usually because the fusing point of MgO is very high; The present invention utilize MgO be dissolved in glacial acetic acid and not with the characteristic of glacial acetic acid generation chemical reaction, according to about 1: 30 ratio preparation MgO glacial acetic acid solution.After abundant stirring and dissolving, solution is transparence, and microchannel plate is placed solution, adds with ultrasonic wave and shakes 3～5 minutes, makes solution fully enter the microchannel and is adsorbed in inner surface.Take out print, ° be higher than 5 * 10 through 500C °～800C
-4Form the MgO secondary electron emission layer of thickness 5nm～10nm after being heating and curing under the Pa vacuum degree.This silicon microchannel plate secondary electron emission layer (continuous dynode) carries out the electron gain test shows through the ultraviolet light electrical method, and the method for a kind of making silicon microchannel plate of the present invention (Si-MCP) secondary electron emission layer is feasible.
The method of a kind of making silicon microchannel plate of the present invention (Si-MCP) secondary electron emission layer may further comprise the steps:
1), according to 1 (MgO): the ratio preparation MgO glacial acetic acid solution of 30 (glacial acetic acids);
2), silicon microchannel plate is positioned in the MgO glacial acetic acid solution, add the MgO glacial acetic acid solution 3～5 minutes of shaking with ultrasonic wave; Make solution fully enter the microchannel and be adsorbed in inner surface;
3), at 500C °～800C °, be higher than 5 * 10
-4Heat silicon microchannel plate in the vacuum plant of Pa vacuum degree, solidify its surperficial MgO.
As shown in Figure 3, under these conditions, the MgO film thickness of inside microchannels is 5nm～10nm.
The present invention proposes and has realized a kind of method for preparing high secondary electron emission layer on silicon microchannel plate, though its secondary electron yield height of applied MgO material, but traditional vacuum coating can't realize it is formed at the microchannel inwall purpose of secondary electron emission layer, the present invention has overcome this problem effectively, has realized forming on silicon microchannel plate the purpose of MgO secondary electron emission layer preferably.And this method deposits emission layer with present available CVD technology and compares in silicon micro-channel, the present device cost is low, and technical process is simple, and technical difficulty is little, and whole preparation time is shorter relatively, the material secondary electron emission coefficiency height that is deposited.
After silicon micro-channel plate array etching and secondary electron emission layer complete, form electric field in the microchannel in order to make, make the particle of incident can be in the outlet of passage form outgoing, at the upper and lower surface evaporation layer of metal electrode of channel plate with secondary electron.In order to prove that further the present invention prepares the feasibility and the effect of MgO secondary electron emission layer, we have finished the experiment test of microchannel plate print.
Electron gain and gain uniformity are the important parameters of reflection MCP electron multiplication performance.The microchannel plate electron gain is defined as:
Wherein, I
OutBe the output current of microchannel plate, I
InInput current for microchannel plate.As shown in Figure 4, in a high vacuum integrated test system, adopt the gain and the gain uniformity that deposit the silicon microchannel plate of MgO secondary electron emission layer with the test of ultraviolet light electrical method.Fig. 5 is a ultraviolet light electrical method test philosophy schematic diagram, comprising collecting anode 1, metal anode 2, silicon microchannel plate 3, Au negative electrode 4, UV lens 5, UV light source 6, vacuum chamber 7.Experiment places vacuum degree about 1 * 10 with silicon microchannel plate
-3In the vacuum chamber 7 of Pa, Au negative electrode 4 is housed before it, metal anode 2 is housed thereafter, loop current value is all measured with galvanometer in the input and output loop of silicon microchannel plate 3.During work, the ultraviolet light of 265nm is incident Au negative electrode 4 after UV lens 5 focus on, the photoelectron of Au negative electrode 4 emissions is behind silicon microchannel plate 3 electron multiplications, by collecting anode 1, metal anode 2 collections, therefore, can calculate the electron gain of silicon microchannel plate 3 by galvanometer A1 and the indicated current change quantity of A2.Micromatic setting in the driving system of stepping motor, the each point that mobile UV light source 6 is measured on the silicon microchannel plate 3, thus detect the gain uniformity.
Those skilled in the art do not break away from essence of the present invention and spirit, can there be the various deformation scheme to realize the present invention, the above only is the preferable feasible embodiment of the present invention, be not so limit to interest field of the present invention, the equivalent structure that all utilizations specification of the present invention and accompanying drawing content are done changes, and all is contained within the interest field of the present invention.
Claims (2)
1. method of making silicon microchannel plate secondary electron emission layer comprises step:
A1, prepare the magnesium oxide glacial acetic acid solution according to a certain percentage;
A2, silicon microchannel plate is positioned in the described magnesium oxide glacial acetic acid solution, adds the described magnesium oxide glacial acetic acid solution a period of time of shaking, make solution fully enter the microchannel and be adsorbed in inner surface with ultrasonic wave;
A3, in vacuum plant, heat silicon microchannel plate, solidify its surperficial magnesium oxide;
It is characterized in that: in the described steps A 1, the allocation ratio of described magnesium oxide glacial acetic acid solution is made as 1 (MgO): 30 (glacial acetic acids), in the described steps A 2, the time that adds the described magnesium oxide glacial acetic acid solution of shaking with ultrasonic wave was made as 3～5 minutes, in the described steps A 3, the temperature of heating silicon microchannel plate is made as 500 ℃～800 ℃.
2. the method for making silicon microchannel plate secondary electron emission layer according to claim 1 is characterized in that, comprises step after the described steps A 3: at the upper and lower surface evaporation layer of metal electrode of described silicon microchannel plate.
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| CN2007100756964A CN101150030B (en) | 2007-08-13 | 2007-08-13 | Method for manufacturing silicon microchannel plate secondary electron emission layer |
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| CN101150030B true CN101150030B (en) | 2011-06-22 |
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| CN101866954B (en) * | 2010-06-09 | 2011-12-14 | 深圳丹邦投资集团有限公司 | TFT substrate having micro-channel structure and preparation method thereof |
| CN106409647A (en) * | 2016-12-06 | 2017-02-15 | 北京大学东莞光电研究院 | Ultraviolet cathode ray light source |
| CN111863582B (en) * | 2020-07-24 | 2022-04-22 | 北方夜视技术股份有限公司 | Ultrasonic suspension rotary type microchannel plate corrosion method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1202536A (en) * | 1997-10-10 | 1998-12-23 | 中国科学院西安光学精密机械研究所 | Method for manufacturing ion feedback prevention film of microchannel plate |
| US6040000A (en) * | 1998-03-24 | 2000-03-21 | Itt Manufacturing Enterprises, Inc. | Method and apparatus for a microchannel plate having a fissured coating |
| CN1444771A (en) * | 2000-06-08 | 2003-09-24 | 浜松光子学株式会社 | Micro-charnnel plate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1202536A (en) * | 1997-10-10 | 1998-12-23 | 中国科学院西安光学精密机械研究所 | Method for manufacturing ion feedback prevention film of microchannel plate |
| US6040000A (en) * | 1998-03-24 | 2000-03-21 | Itt Manufacturing Enterprises, Inc. | Method and apparatus for a microchannel plate having a fissured coating |
| CN1444771A (en) * | 2000-06-08 | 2003-09-24 | 浜松光子学株式会社 | Micro-charnnel plate |
Non-Patent Citations (2)
| Title |
|---|
| 牛丽红.硅微通道板电子倍增器的研制.光学技术32 3.2007,32(3),第354-356页. |
| 牛丽红.硅微通道板电子倍增器的研制.光学技术32 3.2007,32(3),第354-356页. * |
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