CN101140973A - 白光发光二极管 - Google Patents

白光发光二极管 Download PDF

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CN101140973A
CN101140973A CNA2007100501645A CN200710050164A CN101140973A CN 101140973 A CN101140973 A CN 101140973A CN A2007100501645 A CNA2007100501645 A CN A2007100501645A CN 200710050164 A CN200710050164 A CN 200710050164A CN 101140973 A CN101140973 A CN 101140973A
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陈泽
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Priority to PCT/CN2008/072591 priority patent/WO2009049526A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种白光发光二极管(白光LED)，该白光发光二极管，由物理复合材料制成的电极支架，透明透光外壳，兰光或紫光二极管芯片，芯片与支架电极连接线构成，其特征是：在透明透光外壳的内凹面兰光散射光包容面上，涂敷有能够使兰光或紫光芯片发出的兰光或紫光与涂层的荧光粉发出的光互补成白光的荧光粉涂层。当采用玻璃作透明外壳，并且绝缘分隔珠外表面设置反光层，可以克服环氧树脂受UV作用易老化发黑缺点，同时增加芯片的光的射出功率，由于制造工艺过程的简化，还大幅度地降低了白光LED的封装制造成本。

Description

白光发光二极管
技术领域：
本发明涉及一种发光二极管(LED)，尤其是一种发白光的发光二极管。
背景技术：
现有的兰光或紫光转变成白光的白光发光二极管(LED)是由实体环氧树脂外壳，LED兰色或紫光芯片、支承发光二极管芯片，并由环氧树脂绝缘体连接两电极的电极支架、芯片与支架连接线和涂敷在兰色或紫光芯片光线射出端并罩住芯片的荧光变色粉涂层组成。实体透明透光外壳与LED支架及其他器件实行无间隙灌封，由于荧光变色粉涂层涂敷在芯片光线射出端无间隙罩住芯片、使芯片发出的兰色或紫色光与荧光变色粉所发出的光互补形成白光。就现有白光LED来说，由于芯片功率的不断提高，发光强度不断增强，芯片本身的导热散热问题已经十分突出，再加上芯片被无间隙罩在荧光变色粉涂层中、向外的散热通道被阻隔使芯片的散热导热条件变坏，并且透明外壳采用环氧树脂灌封后，在绝大多数的户外使用条件下，受紫外线照射(UV)作用易老化发黑使白光LED由于产生光衰，发光强度不断减弱(有资料显示白光LED由于UV作用，在使用在4000小时时光衰达到35％)。因此，有待于对上述白光LED作更进一步的改进。
发明内容：
本发明的目地，是对目前主要采用的兰光或紫光转变成白光的白光发光二极管采用全新的白光形成技术方案，提供与现有微型灯泡的生产流程基本相同的一种生产工艺成熟，更能确保产品质量，改善芯片散热、导热条件、消除目前产品在UV作用下环氧树脂壳体易老化的缺陷的新的兰光或紫光转变成白光的白光发光二极管的新的制造技术，同时通过制造流程的简化降低产品制作成本。
本人发明的兰光或紫光转变成白光的白光发光二极管，具有空心透明透光外壳，LED电极支架采用物理复合材料，该支架制做的发光二极管负极凸台凹坑内设置反光涂层，芯片与支架电极连接线和荧光粉变色涂层。所述LED兰色或紫光芯片被完全包容在透明透光外壳的内凹面内，发光二极管兰色或紫色芯片被安装在电极支架负极凸台凹坑内，由芯片与支架电极连接线将发光二极管内芯片的正负极连接到物理复合材料支架的正极和负极上，荧光粉变色涂层被均匀地涂敷到透明透光外壳的内凹表面上。
在本发明中，所述透明透光外壳采用玻璃制作，也可以采用其他透明透光的化工原料制作。
本发明的制作，通过下面方式实现，先将发光二极管物理复合材料电极支架放置于专用设备上，将银胶均匀地涂敷于支架的凸台凹坑内，再用专用夾具将兰光或紫光芯片膨胀拉开晶粒后，将晶粒置于凸台凹坑的银胶表面实施布晶，在专用固晶打线设备上实现芯片上两电极与支架外引电极的打线连接(超声波焊接)，再将空心透明绝缘壳置于一专用涂敷机上，将空心透明透光外壳的内凹面包容所有兰色或紫色芯片发出的兰光或紫光部份均匀地涂敷上荧光变色粉并烘干，最后将已实现固晶打线的发光二极管电极支架与透明绝缘壳体，通过专用设备实施自动化组装封接，从而完成本发明的白光发光二极管的制作。
本发明中，所述的空心透明透光外壳可以是玻璃，但也可以用其他透明透光化工材料制作。采用玻璃壳体为最佳，因玻璃的抗UV能力远优于其他透明透光材料。
与现有的同类产品相比较，本发明的有益效果在于：荧光变色粉涂层由于是被涂敷的透明绝缘外壳的内凹面部份，因此，不再无间隙包容兰光或紫光芯片改善了芯片的散热条件，减少散热通道的热阻，使兰光或紫光芯片在相同功率的前提下寿命得到延长，发光强度得到提高。如果透明透光外壳再采用玻璃制作，并且绝缘分隔珠表面设置反光层将内腔制成真空状态，则兰光或紫光芯片的寿命将提高，同时发光强度也随之增强。
本发明的内容结合以下实施例作更进一步的说明，但本发明的内容不仅限于实施例涉及的内容。
附图说明：
图1是实施例中白光发光二极管的结构图。
具体实施方式：
如图1所示，本实施例中的白光发光二极管是由物理复合材料制成的LED电极支架：1，带反光涂层的绝缘分隔珠：2、透明透光外壳：3、荧光变色粉：4、芯片与支架电极连接线：5，LED兰光或紫光芯片：6，反光导热涂层：7，导电银胶：8，所述白光LED兰光或紫光芯片6被置于导电银胶8的表面，即兰光或紫光芯片被置于与透明绝缘外壳透镜的中心部位。芯片与支架电极连接线5分别被超声波焊接于1LED物理复合材料电极支架的正负极柱和芯片正负极上，带反光涂层的绝缘分隔珠2起绝缘分隔两外引电极引线的作用，同时将芯片发出的射向反向的光线反射到光射出端。透明透光外壳3的散射光部份的内凹面被荧光变色粉料4完全包容，即由兰色或紫色芯片6所发出的兰或紫色光，必须穿过荧光变色粉涂层7互补成白光后向外散射。用凹面涂敷有荧光变色粉涂层后的空心透明透光外壳，罩到物理复合材料电极支架制成的装有兰光或紫色芯片并实施电极连接的白光LED半成品上，并实施固定后就实现了本发明的白光LED产品的制造。
本实施例中，凸台凹坑的表面设置反光和导热涂层7。在本实施例中，上述透明透光外壳3可以是环氧树脂外壳，上述带反光涂层的绝缘分隔珠为玻璃珠。如果透明透光外壳3由玻璃制成，并且绝缘分隔珠1外涂设置反光涂层，则进一步解决在UV作用下壳体易老化发黑的缺陷和芯片发出的光的输出効率进一步提高，更利于产品在户外使用从而构成新的实施例。

Claims (3)

1.一种白光LED、具有物理复合材料电极支架，芯片与支架电极连接线，透明透光外壳，发兰光或紫光的LED芯片，带反光涂层的绝缘分隔珠、荧光粉变色粉涂层，其特征是：荧光粉被均匀地涂敷在透明透光外壳的内凹面上，并且由兰色或紫光LED芯片发出的兰光或紫光被完全包容在涂层内。
2.如权利要求1所述的白光LED，其特征是：所述透明透光外壳是玻璃外壳。
3.如权利要求1所述的白光LED，其特征是：所述绝缘分隔珠外表面设置有反光涂层。
CNA2007100501645A 2007-10-08 2007-10-08 白光发光二极管 Pending CN101140973A (zh)

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CNA2007100501645A CN101140973A (zh) 2007-10-08 2007-10-08 白光发光二极管
PCT/CN2008/072591 WO2009049526A1 (fr) 2007-10-08 2008-09-28 Diode électroluminescente blanche

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CNA2007100501645A CN101140973A (zh) 2007-10-08 2007-10-08 白光发光二极管

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009049526A1 (fr) * 2007-10-08 2009-04-23 Ze Chen Diode électroluminescente blanche
CN101964384A (zh) * 2010-08-19 2011-02-02 深圳市佳比泰电子科技有限公司 一种led荧光粉的涂覆方法
CN102606919A (zh) * 2012-03-02 2012-07-25 李建营 一种提高led管亮度的方法及高亮度led管
CN104409606A (zh) * 2014-12-09 2015-03-11 苏州科利亚照明科技有限公司 一种发光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2454896Y (zh) * 2000-12-07 2001-10-17 叶昭钦 灯的改良构造
JP2004352928A (ja) * 2003-05-30 2004-12-16 Mitsubishi Chemicals Corp 発光装置及び照明装置
CN101140973A (zh) * 2007-10-08 2008-03-12 陈泽 白光发光二极管
CN201117677Y (zh) * 2007-10-18 2008-09-17 陈泽 白光发光二极管

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009049526A1 (fr) * 2007-10-08 2009-04-23 Ze Chen Diode électroluminescente blanche
CN101964384A (zh) * 2010-08-19 2011-02-02 深圳市佳比泰电子科技有限公司 一种led荧光粉的涂覆方法
CN102606919A (zh) * 2012-03-02 2012-07-25 李建营 一种提高led管亮度的方法及高亮度led管
CN104409606A (zh) * 2014-12-09 2015-03-11 苏州科利亚照明科技有限公司 一种发光装置

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