CN101132108A - Semiconductor pumping high repeated frequency solid state laser device - Google Patents
Semiconductor pumping high repeated frequency solid state laser device Download PDFInfo
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- CN101132108A CN101132108A CNA2007100530559A CN200710053055A CN101132108A CN 101132108 A CN101132108 A CN 101132108A CN A2007100530559 A CNA2007100530559 A CN A2007100530559A CN 200710053055 A CN200710053055 A CN 200710053055A CN 101132108 A CN101132108 A CN 101132108A
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Abstract
This invention discloses a semiconductor pumping high repetitive frequency solid laser device comprising: a large power optical fiber (OP), focusing system (FS), laser crystal (LC), passive regulating-Q crystal (PRQC), cavity lens (4), heat radiator (HR), cavity lens (8). Said focusing system is composed of convex lens or at least two lenses; resonant cavity is composed by (4) and (8); (4) is direct coated onto the end surface of LC, the pumping light output from optical fiber passes through successively the convex lens group, resonant cavity composed by (4) and (8) for oscillation amplifying, then being Q-regulated by PRQC, finally giving-out laser from (8). Advantages are: novel design, compact structure, high efficiency, no need of liquid-cooling, no need of electron driving source, commercial production, can be used widely in fields of military, scientific research, material processing.
Description
Technical field
The present invention relates to a kind of diode pumped solid state laser, particularly relate to a kind of semiconductor pumping high repeated frequency solid state laser device.
Technical background
In recent years, along with the raising of semiconductor laser integrated technology, diode pumped solid state laser has obtained developing rapidly in each application.Compare with the lamp pump solid state laser technology of maturation, diode pumped solid state laser not only compact conformation, volume is little, power consumption is little, efficient is high, and the life-span is long, good beam quality, and the trend that replaces the lamp light-pumped solid state laser is gradually arranged greatly.
Along with the continuous development of laser technology, its application is more and more extensive, and is also more and more higher to the requirement of laser parameter simultaneously.For example, in laser applications such as material processed, laser ranging, laser radar, laser interference, obtaining high laser peak power is a very important sport technique segment.For reaching this purpose, it is very effective means that output laser is carried out Q-regulating technique.Q-regulating technique comprises that tilting mirror transfers Q, dye Q, electric-optically Q-switched, acousto-optic Q modulation etc.At present, the most normal accent Q mode of using is acousto-optic Q modulation and electric-optically Q-switched.The acousto-optic Q modulation working stability, the life-span is long, and general pulse duration can reach tens of nanoseconds, and repetition rate (repetition) is not higher than 50kHz; Electric-optically Q-switched advantage is the repetition rate that can obtain narrower laser pulse and Geng Gao, but easy decline of electrooptic crystal and deliquescence influence useful life.Transfer the Q mode all will use the electric drive source, be called and initiatively transfer Q for these two kinds.Latest developments play the technology that a kind of absorption saturation effect of utilizing crystal is transferred Q, for example use Cr:YAG (promptly mixing the chromium yttrium-aluminium-garnet), and its mechanism of action is exactly to utilize the saturated absorption effect of crystal to realize laser Q-switching output.Realize that the method does not need the drive source control that adds, so be called passive Q-adjusted.Passive Q-adjustedly compare, can obtain shorter pulse duration, higher repetition rate, and volume is small and exquisite, therefore, obtained using widely in fields such as material processed, laser ranging, laser interference with initiatively transferring Q.And initiatively transfer Q because modulator needs driving power, and pulse frequency generally is not more than 50kHz, therefore can't use in many high repetitions application scenario, and device volume is bigger, and the cost height has limited the application at a lot of special dimensions.
Summary of the invention
Purpose of the present invention is exactly in order to overcome the defective of prior art, to utilize passive Q-adjusted mode that diode pumped solid state laser is transferred Q, the semiconductor pumping high repeated frequency solid state laser device of a kind of high repetition frequency, narrow pulse width being provided.
The technical scheme of the semiconductor pumping high repeated frequency solid state laser device that the present invention is alleged is achieved in that as shown in Figure 1: be made up of large-power optical fiber, focusing system, chamber mirror 4, laser crystal, passive Q-adjusted crystal, laser output cavity mirror 8.It is characterized in that: the semiconductor laser that uses large-power optical fiber 1 coupling output focuses on pump light on the laser crystal 5 by focusing system as pumping source, and focusing system is formed or be no less than the combination of two lens by convex lens 2 and convex lens 3; In the resonant cavity of chamber mirror 4 and laser output mirror 8 (another chamber mirror) composition, forming wavelength is the laser generation of 1064nm; This laser generation is modulated by adjusting Q crystal 6, is the laser 9 of 1064nm by output cavity mirror 8 output wavelengths.Chamber mirror 4 directly is plated on the laser crystal, and rete requires to 808nm anti-reflection, and 1064nm is high anti-; Chamber mirror 8 is the independent parts speculum, the partial reflectance rete of plating 1064nm, and promptly its rete should have predetermined reflectivity to the 1064nm wavelength laser; Around the lateral surface of laser crystal and passive Q-adjusted crystal, be provided with radiator.
The alleged semiconductor pumping high repeated frequency solid state laser device of the present invention is characterized in that: the resonant cavity of two chamber mirror compositions is a line chamber.The solid state laser that the present invention is alleged is characterized in that: because the pump light angle of divergence of optical fiber 1 output is bigger, focusing system of the present invention adopted two convex lens 2 and 3 or set of lenses (being no less than two) finish focusing to pump light.The solid state laser that the present invention is alleged is characterized in that: output cavity mirror 8 can be a concave mirror, also can be level crossing or convex mirror.The alleged passive Q-adjusted crystal that solid state laser adopted of the present invention can be a monolithic crystal, also can be installed successively by polylith crystal head and the tail and form.The solid state laser that the present invention is alleged is characterized in that, radiator adopts copper or aluminum material is made.
Adopt passive Q-adjusted mode to realize pulse modulation among the present invention.Passive Q-adjusted crystal is a kind of optical crystal that contains the doping of bag and absorption function, and its transmissivity can increase (as shown in Figure 2) along with the increase of energy density.When reaching a certain very high value, transmissivity is stabilized in a very high value, and promptly material becomes transparent.According to this effect, passive Q-adjusted crystal has just begun to stop the generation of laser generation in pumping, thereby realizes the quick accumulation of the population of upper laser level.Increase along with the population inversion in the laser crystal, the gain coefficient of laser increases gradually, when gain coefficient during greater than cavity loss, begin to occur laser generation, and the endovenous laser light intensity increases fast, cause the transmitance of passive Q-adjusted crystal to increase conversely, so-called bleaching phenomenon occurs, as shown in Figure 2.Loss this moment is very low, thus the output high-power pulse.Along with reducing of upper laser level population, gain diminishes, and laser intensity diminishes, and it is big that the loss of adjusting Q crystal becomes, and finally causes stopping of laser output, finishes the generation of a laser pulse.The repetition that does not stop of said process has just produced the train of impulses.The width of pulse depends on the length of the initial transmission and the laserresonator of adjusting Q crystal; The peak power of pulse depends on the size of the initial transmission and the pumping luminous point of adjusting Q crystal; The repetition rate of pulse depends on the reflectivity of initial transmission, pump light intensities and the outgoing mirror of adjusting Q crystal.
Adopted 7 pairs of laser crystals 5 of radiator and adjusting Q crystal 6 heat radiations among the present invention, its effect is: can effectively control the working temperature of two crystal, reduce the thermal lensing effect of laser, further improve the beam quality of output laser.
The semiconductor pumping high repeated frequency solid state laser device that the present invention is alleged, have novel in design, rational in infrastructure, compactness is small and exquisite, efficient is high, no liquid cooling (adopting air-cooled), need not the electric drive source, can realize characteristics such as modularization, miniaturization, industrial batch production; Have high efficiency, can realize being too narrow to the pulse duration, high of 1ns to the repetition rate more than the 300kHz, and stable, functional, easy and simple to handle, be easy to promote; The present invention can be widely used in military affairs (as infrared counteraction, infrared interference etc.), scientific research, materials processing fields such as (as surface treatment, marks).
Description of drawings
Fig. 1 is a semiconductor pumping high repeated frequency solid state laser device structural representation of the present invention;
The transmissivity of the passive Q-adjusted crystal of Fig. 2 is with the change curve schematic diagram of the energy density of transmitted light.
Embodiment
The embodiment of the semiconductor pumping high repeated frequency solid state laser device that the present invention is alleged is described in detail as follows in conjunction with Fig. 1 to 2:
Embodiment 1: the alleged light-pumped solid state laser of the present invention is made of as pumping source, convex lens 2 and 3, laser crystal 5, passive Q-adjusted crystal 6, chamber mirror 4 and chamber mirror 8 etc. large-power optical fiber 1 coupling output semiconductor laser.The resonant cavity that chamber mirror 4 and chamber mirror 8 are formed is a line chamber; Chamber mirror 4 directly is plated on the end face of laser crystal 5, and rete requires to the 808nm wavelength light anti-reflection, and the 1064nm wavelength light is high anti-; Chamber mirror 8 is plane 1064nm wavelength partially reflecting mirror independently, and reflectivity is 75%.The pump light of the 808nm wavelength of optical fiber 1 emission successively by convex lens 2 and 3, focus on the laser crystal 5, excite the laser that produces the 1064nm wavelength, internal oscillation through chamber mirror 4 and chamber mirror 8 compositions amplifies again, and adjusting Q crystal 6 is transferred Q in the chamber, by the laser 9 of outgoing mirror 8 output 1064nm wavelength.This routine pumping source 1 has adopted the optical fiber output pump light that numerical aperture is 0.22, core diameter is 400 μ m; The focal length of choosing convex lens 2 is 6mm, and the focal length of convex lens 3 is 12mm; The material of adjusting Q crystal 6 is Cr:YAG, and initial transmission is 90%; Outgoing mirror 8 is a level crossing, and reflectivity is 75%.The chamber is long to be 16mm.Can obtain repetition rate at pump light during for 20W according to above-mentioned parameter is that 150kHz, pulse duration are the pulse laser of the 1064nm wavelength of 4.5ns, and average output power can reach 6.5W.Around the lateral surface of laser crystal 5 and passive Q-adjusted crystal 6, pasted the radiator of making of copper material 7.
Embodiment 2: this routine technical scheme is identical with embodiment 1, but the parameter of choosing is not quite similar.The optical-fiber laser power output of pumping source 1 still is 20W, the focal length of convex lens 2 still is 6mm, the focal length of convex lens 3 still is 12mm, adjusting Q crystal 6 is Cr:YAG (promptly mixing the chromium yttrium-aluminium-garnet), and initial transmission is 95%, and the reflectivity of outgoing mirror 8 is 80%, the chamber is long to be 13mm, other parameter is with example 1, and finally obtaining repetition rate is that 200kHz, pulse duration are the pulse laser of the 1064nm wavelength of 4ns, and average output power is 7W.
Claims (6)
1. semiconductor pumping high repeated frequency solid state laser device, constitute by large-power optical fiber (1), focusing system, laser crystal (5), passive Q-adjusted crystal (6), chamber mirror (4), chamber mirror (8), it is characterized in that, focusing system is made up of convex lens (2,3), also can be the combination that is no less than two lens, chamber mirror (4) and chamber mirror (8) be formed resonant cavity; Chamber mirror (4) directly is plated on the end face of crystal (5), and rete requires to the 808nm wavelength laser anti-reflection, and the 1064nm wavelength laser is high anti-; Chamber mirror (8) is the independent parts speculum, and its rete should have predetermined emissivity to the 1064nm wavelength laser; The pump light of optical fiber (1) output is successively by convex lens group (2,3), go up focusing at laser crystal (5) and excite the laser that produces the 1064nm wavelength, internal oscillation through chamber mirror (4) and chamber mirror (8) composition amplifies again, adjusting Q crystal in the chamber (6) is transferred Q, laser (9) by outgoing mirror (8) output 1064nm wavelength is provided with radiator (7) around the lateral surface of laser crystal (5) and passive Q-adjusted crystal (6).
2. semiconductor pumping high repeated frequency solid state laser device according to claim 1 is characterized in that, focusing system is formed with two convex lens (2,3).
3. semiconductor pumping high repeated frequency solid state laser device according to claim 1 and 2 is characterized in that, the resonant cavity that chamber mirror (4) and chamber mirror (8) are formed is a line chamber.
4. semiconductor pumping high repeated frequency solid state laser device according to claim 1 and 2 is characterized in that, output cavity mirror (8) can be a concave mirror, also can be level crossing or convex mirror.
5. semiconductor pumping high repeated frequency solid state laser device according to claim 1 is characterized in that, passive Q-adjusted crystal (6) can be the crystal of monolithic, also can form by putting successively before and after the polylith crystal.
6. semiconductor pumping high repeated frequency solid state laser device according to claim 1 or 5, it is characterized in that: radiator (7) adopts copper or aluminum material is made.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007100530559A CN101132108A (en) | 2007-08-28 | 2007-08-28 | Semiconductor pumping high repeated frequency solid state laser device |
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| CNA2007100530559A CN101132108A (en) | 2007-08-28 | 2007-08-28 | Semiconductor pumping high repeated frequency solid state laser device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312285B (en) * | 2008-04-17 | 2011-01-26 | 成都东骏激光股份有限公司 | High combination property laser crystal and method for making same |
| CN102157897A (en) * | 2011-03-18 | 2011-08-17 | 中国科学院半导体研究所 | Pulse width-adjustable solid laser |
| CN102810812A (en) * | 2012-07-25 | 2012-12-05 | 西安电子科技大学 | Fiber-coupled output Q-switched solid-state laser and manufacturing process |
| CN110911954A (en) * | 2019-12-09 | 2020-03-24 | 湖北华中光电科技有限公司 | High repetition frequency temperature control-free semiconductor pump 1064nm disk laser |
-
2007
- 2007-08-28 CN CNA2007100530559A patent/CN101132108A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312285B (en) * | 2008-04-17 | 2011-01-26 | 成都东骏激光股份有限公司 | High combination property laser crystal and method for making same |
| CN102157897A (en) * | 2011-03-18 | 2011-08-17 | 中国科学院半导体研究所 | Pulse width-adjustable solid laser |
| CN102157897B (en) * | 2011-03-18 | 2013-02-13 | 中国科学院半导体研究所 | Pulse width-adjustable solid laser |
| CN102810812A (en) * | 2012-07-25 | 2012-12-05 | 西安电子科技大学 | Fiber-coupled output Q-switched solid-state laser and manufacturing process |
| CN102810812B (en) * | 2012-07-25 | 2014-10-15 | 西安电子科技大学 | Fiber-coupled output Q-switched solid-state laser and manufacturing process |
| CN110911954A (en) * | 2019-12-09 | 2020-03-24 | 湖北华中光电科技有限公司 | High repetition frequency temperature control-free semiconductor pump 1064nm disk laser |
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