CN101130452B - 星型双回转磁控溅射导电玻璃镀膜生产线及生产工艺 - Google Patents
星型双回转磁控溅射导电玻璃镀膜生产线及生产工艺 Download PDFInfo
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- CN101130452B CN101130452B CN2006100623116A CN200610062311A CN101130452B CN 101130452 B CN101130452 B CN 101130452B CN 2006100623116 A CN2006100623116 A CN 2006100623116A CN 200610062311 A CN200610062311 A CN 200610062311A CN 101130452 B CN101130452 B CN 101130452B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000011521 glass Substances 0.000 title claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 title claims description 8
- 238000012545 processing Methods 0.000 title description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 61
- 238000000576 coating method Methods 0.000 claims abstract description 38
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 33
- 230000007306 turnover Effects 0.000 claims description 28
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 45
- 239000000047 product Substances 0.000 description 13
- 238000013461 design Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
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- 238000011161 development Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 239000005348 self-cleaning glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Priority Applications (1)
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CN2006100623116A CN101130452B (zh) | 2006-08-25 | 2006-08-25 | 星型双回转磁控溅射导电玻璃镀膜生产线及生产工艺 |
Applications Claiming Priority (1)
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CN2006100623116A CN101130452B (zh) | 2006-08-25 | 2006-08-25 | 星型双回转磁控溅射导电玻璃镀膜生产线及生产工艺 |
Publications (2)
Publication Number | Publication Date |
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CN101130452A CN101130452A (zh) | 2008-02-27 |
CN101130452B true CN101130452B (zh) | 2011-05-11 |
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CN2006100623116A Active CN101130452B (zh) | 2006-08-25 | 2006-08-25 | 星型双回转磁控溅射导电玻璃镀膜生产线及生产工艺 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102517553B (zh) * | 2011-12-29 | 2013-09-11 | 深圳豪威真空光电子股份有限公司 | 磁控溅射镀膜生产***及其生产工艺 |
CN109912233A (zh) * | 2017-12-13 | 2019-06-21 | 湘潭宏大真空技术股份有限公司 | 三银low-e玻璃真空镀膜生产线 |
CN109913847A (zh) * | 2017-12-13 | 2019-06-21 | 湘潭宏大真空技术股份有限公司 | Low-e玻璃真空磁控溅射镀膜生产线 |
CN109913848A (zh) * | 2017-12-13 | 2019-06-21 | 湘潭宏大真空技术股份有限公司 | 双银low-e玻璃真空镀膜溅射生产线 |
CN109912227A (zh) * | 2017-12-13 | 2019-06-21 | 湘潭宏大真空技术股份有限公司 | 单银low-e玻璃镀膜生产线 |
CN110699654A (zh) * | 2019-11-07 | 2020-01-17 | 湘潭宏大真空技术股份有限公司 | 一种arc镀膜生产线及镀膜工艺 |
CN113791510A (zh) * | 2021-08-06 | 2021-12-14 | 河北光兴半导体技术有限公司 | 用于电致变色玻璃的制备*** |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2075655U (zh) * | 1989-09-05 | 1991-04-24 | 核工业西南物理研究院 | 双室旋转磁控溅射镀膜机 |
CN2399402Y (zh) * | 1999-12-22 | 2000-10-04 | 中国科学院沈阳科学仪器研制中心 | 超高真空多功能磁控溅射装置 |
CN2656432Y (zh) * | 2003-09-11 | 2004-11-17 | 深圳豪威真空光电子股份有限公司 | 旋转式磁控溅射靶 |
-
2006
- 2006-08-25 CN CN2006100623116A patent/CN101130452B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2075655U (zh) * | 1989-09-05 | 1991-04-24 | 核工业西南物理研究院 | 双室旋转磁控溅射镀膜机 |
CN2399402Y (zh) * | 1999-12-22 | 2000-10-04 | 中国科学院沈阳科学仪器研制中心 | 超高真空多功能磁控溅射装置 |
CN2656432Y (zh) * | 2003-09-11 | 2004-11-17 | 深圳豪威真空光电子股份有限公司 | 旋转式磁控溅射靶 |
Non-Patent Citations (2)
Title |
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彭传才等.国产ITO靶材的镀膜工艺研究.矿冶工程18 3.1998,18(3),61-63. |
彭传才等.国产ITO靶材的镀膜工艺研究.矿冶工程18 3.1998,18(3),61-63. * |
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Assignee: Shenzhen hivac Film Co. Ltd. Assignor: Shenzhen Haowei Vacuum Photoelectron Holding Co., Ltd. Contract record no.: 2011440020439 Denomination of invention: Star type double-turn magnetron sputtering conducting glass plated film product line and processing technique thereof Granted publication date: 20110511 License type: Exclusive License Open date: 20080227 Record date: 20111206 |
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Address after: 518000 Guangdong Province, Shenzhen high tech Zone of Nanshan District City, the first floor of the building D Howell District, third floor Patentee after: Shenzhen Howell Technology Group Limited by Share Ltd Address before: 518054, Shenzhen, Guangdong province Nanshan District Shennan Avenue high-tech industrial village W1A district on the first floor Patentee before: Shenzhen Haowei Vacuum Photoelectron Holding Co., Ltd. |
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Effective date of registration: 20200911 Address after: Area D, 4th floor, Howe building, No.8, Langshan No.2 Road, Xili street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Haowei Xingke film window (Shenzhen) Co.,Ltd. Address before: 518000 Guangdong Province, Shenzhen high tech Zone of Nanshan District City, the first floor of the building D Howell District, third floor Patentee before: Shenzhen Howell Technology Group Limited by Share Ltd. |
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Effective date of registration: 20220421 Address after: 518000 Guangdong, Shenzhen, Nanshan District Xili street, Technology north 2 Road, Howe tower Patentee after: SHENZHEN HIVAC DISPLAY TECHNOLOGY CO.,LTD. Address before: 518000 area D, 4th floor, Haowei building, No.8, Langshan 2nd Road, Xili street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Haowei Xingke film window (Shenzhen) Co.,Ltd. |