CN101127372A - AlSb solar battery structure - Google Patents
AlSb solar battery structure Download PDFInfo
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- CN101127372A CN101127372A CN 200710050020 CN200710050020A CN101127372A CN 101127372 A CN101127372 A CN 101127372A CN 200710050020 CN200710050020 CN 200710050020 CN 200710050020 A CN200710050020 A CN 200710050020A CN 101127372 A CN101127372 A CN 101127372A
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- alsb
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model of AlSb solar cell structure belongs to a new type of energy source. The solar energy can be sufficiently transferred into the electric energy with the help of the 1.6eV energy gap width of the AlSb. However, a metal backing electrode forming effective ohmic contact with AlSb base material is hard to find due to the 3.6eV electron affinity. The utility model provides a new AlSb cell structure. As a window layer of the cell, a layer of ZnS is deposited on transparent conducting glass surface. The p-AlSb is used as an absorbing layer of incident light; the GaSb is chosen as a transient layer between the AlSb and the metal backing electrode; and Al is selected as the metal backing electrode. The AlSb solar cell structure in the utility model can make full use of the 335 to 767nm wave band of sunlight; effectively promote the ohmic contact property of the AlSb and the metal backing electrode and thus help realize high fill factor and photoelectric conversion efficiency.
Description
Technical field under in the of one
The field is new energy field under this invention.
Two background technologies
Along with the continuous quickening of process of industrialization paces, industry and daily life continue to increase the consumption of the energy; The development of production of energy and petroleum chemical industry can not be caught up with All Around The World expanding economy paces, causes energy supply and demand contradiction increasing, and holding at high price of crude oil and product oil seriously restricts various countries' expanding economy.
Energy resource consumption constantly increases, and is also increasing to the environment damage effect.Energy crisis and ecological deterioration have become the unavoidable cardinal task in the world today.In order to solve the energy and environmental problem, various countries fall over each other to propose different solutions. and main developed country all with the form of legislation, reduces and limits the consumption of fossil energy, encourages the exploitation of regenerative resource.
In March, 2005, China National People's Congress has also issued the regenerative resource method, with the form of law encourage frugality the energy, reduce disposal of pollutants, increase research and development input new forms of energy.
In regenerative resource, the solar cell that solar energy is directly changed into electric energy is the most important part of regenerative resource.China's photovoltaic industry has obtained fast development under country supports energetically, the assets of enterprise and the output value have been arranged above hundred million yuan.
In the solar cell product, the material more than 95% is monocrystalline silicon and polysilicon at present.The advantage of these two kinds of products is conversion efficiency height, and the life-span is long; Shortcoming is the cost of raw material and production cost height, makes to have limited the penetration and promotion of solar cell by product price height.
The developing direction of solar cell of future generation is the thin film type solar battery battery.Hull cell is a face effect of utilizing material, and the thickness of film is generally the micron number magnitude, and the consumption of material is far below monocrystalline and polycrystal silicon cell.The preparation area of hull cell is very big, the deposition technique maturation, and the huge price of the solar cell product that final production goes out that makes of output can be lower than 0.5 Euro.
Thin film solar cell in laboratory research and Small Scale Industry production has CdTe battery and CIS (copper indium diselenide) battery at present.The CdTe battery has the conversion efficiency height, and manufacture craft simply is subjected to people's great attention, but Cd has harm to human body, can strengthen manufacturing cost and use cost in production and use.The CIS battery will consume a large amount of indium metal, and indium is the most rare metal material, about 200 tons of the annual production in the whole world at present, and wherein major part is used for flat-panel screens, so the CIS battery can be restricted because of material source is rare, can not produce in enormous quantities.
The energy gap width of AlSb binary compound is 1.6eV, can absorb 98% of visible light in the sunlight, Al, Sb are a large amount of metal materials of producing and using, and be nontoxic in producing and using, environmentally friendly, be more satisfactory novel thin film battery material.
Three summary of the invention
Purpose of the present invention is to seek a kind of new AlSb thin-film solar cell structure, can be stable, large-area, carry out opto-electronic conversion efficiently.
Summary of the invention is: the AlSb solar battery structure is glass/transparent conductive film/n-ZnS/p-AlSb/p-GaSb/Al.
The band gap of ZnS is 3.7eV, and corresponding cut-off wavelength is 335nm, has covered the high shortwave scope of solar radiation intensity, can allow the sunlight medium wavelength pass through greater than the light more than the 335nm.AlSb band gap 1.6eV, corresponding cut-off wavelength 767nm, the response wave length scope of battery is between 335～767nm, and this wave band is the main wave band of sun light distribution.
The electron affinity of ZnS is 2.8eV, and band gap 3.7eV, the electron affinity of AlSb are 3.6eV, and band gap is 1.6eV.The Fermi level of ZnS is 0.2～0.4eV position below conduction band, and the AlSb Fermi level is in 0.2～0.3 position, valence band top.Therefore, the conduction band barrier spike that the heterojunction that n-ZnS, p-AlSb constitute does not exist the obstruction electronics to move to the p district from the n district does not exist yet and hinders the valence band potential barrier spike that moves to the n district from the p district in the hole.
Between AlSb and back electrode metal, add one deck p-GaSb film.P-GaSb band gap～0.75eV, AlSb can generate Al with p-GaSb
1-xGa
xThe Sb phase.Al can generate Al with p-GaSb
xGa
1-xThe Sb phase, thus skim obtained on the back of the body surface of battery, both can absorb the nonabsorbable shortwave photon of AlSb absorbed layer, also can realize the ohmic contact between metal back electrode and the AlSb.
Four embodiments
Embodiment: at glass surface heat deposition (CVD) sputtering sedimentation layer of transparent conductive film, as ITO, SnO
2: one or more multilayer film such as F, ZnO:Al, as electrode before AlSb battery transparent.Deposit ZnS on the electrode material with sputtering method before transparent, thickness is at 0.1～0.5 micron; Deposit the p-AlSb film then, thickness is 0.3～5 micron; Deposition one deck GaSb, 0.1～0.2 micron of thickness; Deposit one deck Al metal back electrode at last, thickness is 0.3～0.8 micron.
Claims (6)
1. an AlSb solar battery structure comprises: at first deposit the Window layer of one deck ZnS as battery on transparent conducting glass;
Deposition p-AlSb film is as the absorption of incident light layer;
Deposition p-GaSb is as back contact on AlSb;
Last plated metal Al is as back of the body metal electrode layer.
2. AlSb solar battery structure as claimed in claim 1 is characterized in that the transparent preceding electrode of transparent conductive film as battery.Wherein transparent conductive film can be ITO, SnO
2: the multilayer film of one or more of F, ZnO:Al.
3. AlSb solar battery structure as claimed in claim 1 is characterized in that the Window layer of ZnS film as battery, and film thickness is at 0.1～0.5 micron.
4. AlSb solar battery structure as claimed in claim 1 is characterized in that the absorbed layer of p-AlSb film as battery, and thickness is 0.3～5 micron.
5. AlSb solar battery structure as claimed in claim 1 is characterized in that p-GaSb is as back of the body contact transition zone, 0.1～0.2 micron of thickness.
6. AlSb solar battery structure as claimed in claim 1 is characterized in that adopting the back of the body metal electrode of Al as battery, and thickness is 0.3～0.8 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710050020 CN101127372A (en) | 2007-09-17 | 2007-09-17 | AlSb solar battery structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710050020 CN101127372A (en) | 2007-09-17 | 2007-09-17 | AlSb solar battery structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101127372A true CN101127372A (en) | 2008-02-20 |
Family
ID=39095344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710050020 Pending CN101127372A (en) | 2007-09-17 | 2007-09-17 | AlSb solar battery structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN101127372A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800262A (en) * | 2008-08-21 | 2010-08-11 | 应用材料股份有限公司 | Solar cell substrates and methods of manufacture |
| CN103730540A (en) * | 2014-01-09 | 2014-04-16 | 四川大学 | Technology for preparing AlSb film solar cell through pulse laser method |
| CN104716218A (en) * | 2013-12-12 | 2015-06-17 | 财团法人工业技术研究院 | Solar cell, method for forming same, and method for forming n-type ZnS layer |
-
2007
- 2007-09-17 CN CN 200710050020 patent/CN101127372A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800262A (en) * | 2008-08-21 | 2010-08-11 | 应用材料股份有限公司 | Solar cell substrates and methods of manufacture |
| CN104716218A (en) * | 2013-12-12 | 2015-06-17 | 财团法人工业技术研究院 | Solar cell, method for forming same, and method for forming n-type ZnS layer |
| CN103730540A (en) * | 2014-01-09 | 2014-04-16 | 四川大学 | Technology for preparing AlSb film solar cell through pulse laser method |
| CN103730540B (en) * | 2014-01-09 | 2016-08-17 | 四川大学 | A kind of method using pulsed laser deposition to prepare AlSb film solar cell |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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