CN101123167B - External electrode fluorescent lamp (EEFL) with optimized operating efficiency - Google Patents
External electrode fluorescent lamp (EEFL) with optimized operating efficiency Download PDFInfo
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- CN101123167B CN101123167B CN2007101380402A CN200710138040A CN101123167B CN 101123167 B CN101123167 B CN 101123167B CN 2007101380402 A CN2007101380402 A CN 2007101380402A CN 200710138040 A CN200710138040 A CN 200710138040A CN 101123167 B CN101123167 B CN 101123167B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/30—Vessels; Containers
- H01J61/35—Vessels; Containers provided with coatings on the walls thereof; Selection of materials for the coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/38—Devices for influencing the colour or wavelength of the light
- H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
- H01J61/48—Separate coatings of different luminous materials
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Abstract
An EEFL-type fluorescent lamp for backlighting of displays or screens, whereby the encapsulating glass and/or a (partial) coating of the interior surface of the encapsulating glass are provided which possess a low work function Wa for the electrons of <6 eV, preferably <5 eV, more preferably 0 eV<Wa<5 eV, especially preferably 0 eV<Wa<4 eV, more especially preferably 0 eV<Wa<3 eV. This allows forthe operating efficiency to be optimized and the firing voltage to be lowered.
Description
Technical field
The present invention relates to a kind of EEFL type fluorescent lamp, its efficient is optimised.
Background technology
As everyone knows, the fluorescent lamp that is used for the background illumination of TFT flat-screen CRT monitor generally all uses the thin-walled glass pipe., have as more novel lamp, wherein electrical power is coupled by alternating voltage for this reason, Here it is so-called EEFLs (external electrode fluorescence lamp).In such lamp, do not pass the metal electrode that glass inserts.Utilization has formed capacitor as the glass (for example this glass is equipped with external metal cap) and the Ionized gas (as mercury or inert gas) of dielectric in the inside of tubule, and electrical power can be used as the alternating voltage coupling by this capacitor.This glass is here not only as the dielectric in the capacitor, and the surface that is positioned at glass tube has constituted negative electrode.
At present, the same with traditional fluorescent lamp, EEFL type fluorescent lamp has used identical glassware, for example wherein also can pass glass and insert metal electrode (CCFLs, cold-cathode fluorescence lamp).For example, in publication WO 2006/006831 A1 and WO 2006/011752A1, EEFL type fluorescent lamp and application thereof have been disclosed.Yet, also do not optimize its efficient.Do not provide explanation about applied glassware yet.
Disclosed the glassware of the luminescent device that is used to have external electrode in German patent DE 20 2,005 004 459 U1, wherein, the ratio of loss angle and dielectric constant should be
This glassware has the dielectric property of having optimized.
The inventor believes, when the outer casing shell of lamp, change so promptly when the inert gas-ion is neutralized, has or the big as far as possible possibility of emitting secondary electron, the starting resistor minimum of the efficient maximum of fluorescent lamp and lamp so be provided there.People have also mentioned so-called " Auger neutralization ", known its especially in and the metal surface on inert gas-ion.
When the ion of the gaseous plasma that comes from cathode surface was neutralized, because glassware is an insulator, at first, the possibility of sending secondary electron was very little.The high starting voltage that causes fluorescent lamp thus.Because high starting voltage must use high voltage in flat-screen CRT monitor, this has also brought security risk.In addition because the alternating voltage that drives alternately the time can appear ineffective time, so efficient has reduced.
Summary of the invention
Thus, the objective of the invention is to, avoid the problems referred to above of the prior art and the fluorescent lamp of the EEFL type with described shortcoming is provided.
Now, be surprisingly found out that when use had the glassware of the higher possibility of emitting secondary electron and/or glass coating, EEFL type fluorescent lamp had extra high efficient and has the starting resistor of alap lamp simultaneously so.This possibility can be passed through electron work functon W
aExpress.Work function is in order to draw the energy of a necessary minimum of electronics from uncharged solid.Therefore, should use, in this case, alap work function W can be set according to glassware of the present invention and/or glass coating
a
Therefore, according to the present invention, this purpose realizes by the EEFL type fluorescent lamp that is used for display or screen are carried out background illumination, comprises outer casing shell, wherein
(1) this outer casing shell has low electron work functon W
a＜6eV, preferred＜5eV, more preferably 0eV＜W
a＜5eV, preferred especially 0eV＜W
a＜4eV, preferred fully especially 0eV＜W
a＜3eV, and comprise a kind of alloy at least, be selected from
-by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yThe group (a) that O forms, content are at 3-70 weight %, and preferred especially 5-60 weight % is fully particularly preferably in the 10-60 weight % scope; And/or
-by La
2O
3, Bi
2O
3, the group (b) formed of BaO and/or PbO, content is at 3-80 weight %, particularly preferably in 5-75 weight %, fully particularly preferably in the 10-65 weight % scope;
And/or
(2) this outer casing shell has (part) undercoating, and it has low electron work functon W
aFor＜6eV, preferred＜5eV, more preferably 0eV＜W
a＜5eV, preferred especially 0eV＜W
a＜4eV, preferred fully especially 0eV＜W
a＜3eV, wherein, undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yThe group (a) that O forms, content are at 3-70 weight %, and preferred especially 5-60 weight % is fully particularly preferably in the 10-60 weight % scope; And/or
-by La
2O
3, BaO, Bi
2O
3And/or the group (b) of PbO composition, content is at 3-80 weight %, particularly preferably in 5-75 weight %, fully particularly preferably in the 10-65 weight % scope.
By principle according to the present invention, corresponding very special glassware is provided or has been used for the coating of glass, it comprises at least a alloy, be preferably the combination that comprises multiple alloy especially, the undercoating of its feasible outer casing shell used and/or outer casing shell is based on low electron work functon W
aAnd the optimised efficient with EEFL type fluorescent lamp becomes possibility.In addition, realized thus and will drop to low level according to the starting resistor of EEFL type fluorescent lamp of the present invention.
In category of the present invention, be not particularly limited outer casing shell, as long as it is suitable for EEFL type fluorescent lamp.Based on change scheme according to the present invention (1), this parent glass has low electron work functon W
aThis is to have one or more alloy glasswares that are selected from group (a) and/or group (b) by doping to realize.So, for example, can be 3 weight % with preferred Cmin, preferred 5 weight %, the amount that is in particular 10 weight % contains alkaline earth ion (group (a)).Relate to for example BaO, CaO, MgO, SrO, MgF here
2Or Mg
1-x-ySr
xCa
yO.These can be separately or use with two kinds, three kinds, four kinds or more kinds of compositions.
For described alkaline earth ion, also can in glassware according to the present invention, use aluminium compound, in addition as Al
2O
3And/or AlN.Its preferable range is about 3 to about 70 weight %, and particularly about 10 to about 60 weight %, and these alloys help the low work function W of desired outer casing shell in this scope
a
In addition, also optional or additionally have this possibility, heavy metal is covered in the glassware go (group (b)).For example, relate to compound, particularly lanthanum, bismuth, barium and/or plumbous oxide here.These are the ions that especially easily polarize, and wherein electron cloud is easy to move with respect to nuclear.
According to the present invention, can be according to (part) undercoating in another change scheme (2) designed enclosures glass, it comprises at least a alloy, preferably includes above-mentioned group (a) and/or combination (b).The content range of the alloy of group (a) preferentially is selected from about 3 to the scope of about 70 weight %.The content range of the alloy of group (b) preferentially is selected from about 3 to the scope of about 80 weight %.As realizing that the alloy of group (a) and group (b) also can be combined.
The coating that is positioned at the lip-deep outer casing shell in inside of glass is a partial coating preferably, particularly on selected outer casing shell zone.Undercoating on purpose only is arranged on the there, and the ion that is included in the gas in the lamp discharges there, that is to say, the hard contact of the negative electrode of fluorescent lamp is positioned at this zone or centers on this zone.
Internally coated layer thickness according to EEFL type fluorescent lamp of the present invention is preferably about 0.3nm to the scope of about 10 μ m; Yet under individual cases, aforementioned value also can reduce or raise significantly.Except a kind of/multiple alloy, in coating, also can contain common additive.
Particularly preferred, following being limited to 〉=15 weight % that the summation of the amount of the alloy of group (a) and group (b) has in outer casing shell, preferred 〉=20 weight %, fully especially preferably 〉=30 weight %, and be limited on having≤80 weight %, preferred≤75 weight %, preferred≤70 weight % fully especially.Equally, group (a) and organize following being limited to 〉=15 weight % that the summation of amount of the alloy of (b) has in (part) undercoating preferably, preferred 〉=20 weight %, fully especially preferably 〉=30 weight %, be limited on having≤80 weight %, preferred≤75 weight %, preferred≤70 weight % fully especially.Therefore realized particularly advantageous characteristic of the present invention.
According to the present invention, be not particularly limited the internally coated manufacture method of applied outer casing shell goods, can use the known coating process of each professional person.For example, can be by spraying, immersion outer casing shell, sprinkling or calcining coating are finished coating.For example, coating can be finished by the slurries (Schlemme) that immersion has a powder, and this powder contains at least a alloy of having mentioned or is made up of this alloy.
According to a further advantageous embodiment of the invention, above-mentioned change scheme (1) and (2) not only may be used alone, can also be used in combination.In the change scheme of this combination, additionally be provided with coating according to the outer casing shell of EEFL type fluorescent lamp of the present invention (containing at least a alloy that is selected from group (a) and/or group (b) in its glass ingredient), this coating contains at least and a kind ofly aforementionedly is selected from group (a) and/or organizes the alloy of (b) or be made up of this alloy.The particularly preferred composition that is to use two kinds, three kinds, four kinds or more kinds of above-mentioned alloy.
Alloy used according to the invention causes electron work functon W in glass ingredient and/or outer casing shell coating
aObviously be reduced to＜value of 6eV preferred＜5eV, more preferably 0eV＜W
a＜5eV, preferred especially 0eV＜W
a＜4eV, preferred fully especially 0eV＜W
a＜3eV.In addition, based on work function W
aSo-called secondary emission rate γ is set.Accordingly, when the outer casing shell goods with compound and/or the undercoating of outer shell product glass with compound when emitting ions (for example Hg, Xe, Ne and/or Ar ion) has high secondary electron emissivity γ, be particularly preferred according to the present invention.Preferably, regulate secondary rate γ like this, promptly have γ＞0.01, preferred especially γ＞0.05, preferred fully especially γ＞0.1 by the alloy of selecting appropriate amount.Realized by secondary rate γ is set, in using EEFL type fluorescent lamp, further optimized according to outer casing shell goods of the present invention or be used for the undercoating of this outer casing shell, thereby obtained desired low electron work functon W
aThis can for example realize by the various combination of above-mentioned alloy and the change of use amount.
Particularly preferably be, use glassware constituent and/or coating material among the present invention, it has high density of electronic states (Zustandsdichte) in valence band.In order to make the coating can be on fluorescent pigment, for example particularly preferably be fully that coating material has big band gap (bandluecke), for example＞4eV.
When using mist (especially preferably to have the noble gas mixtures of forming with the inert gas that does not have mercury vapor by two or more, the admixture of gas that for example has neon and/or helium and/or argon and/or mercury and similar gas) time, the running of EEFL type fluorescent lamp further shows special benefits.Particularly preferably be admixture of gas, it contains the neon of 10 to 99 volume % scopes and remainingly is the form of other inert gas.The reason of using gases mixture is that composition produces specially suitable characteristic.So, for example, during big ionization energy causes big secondary emission rate γ owing to it (according to it is considered herein that this big secondary emission rate is particularly advantageous), xenon has the characteristic of extraordinary demonstration fluorescence at neon.
The invention still further relates to application or employed (part) internally coated application of outer casing shell, low therein work function W
aBe essential, wherein, low electron work functon W
a＜6eV, preferred＜5eV, more preferably 0eV＜W
a＜5eV, preferred especially 0eV＜W
a＜4eV, preferred fully especially 0eV＜W
a＜3eV, particularly for EEFL type fluorescent lamp, wherein, outer casing shell or (part) undercoating contain the alloy of at least a described appropriate amount.
In initiatively or passive or non-display (so-called non--spontaneous emission display) from key lighting, among for example multiple LCD-TFT, EEFL type fluorescent lamp, particularly microfluorescent lamp and its mfg according to the present invention are applied to particularly in the background illumination field of electronic display unit or all types display (for example carrying on the back the irradiation display) or in the back light system.Aforementioned calculation machine display for example, particularly TFT-device, LCD-display, plasma-display, scanner, advertisement screen, Medical Instruments, aerospace equipment, airmanship equipment, call screen, special than being the mobile phone screen, and in multiple PDA (personal digital assistant).Use for these, this fluorescent lamp has very little size and this lamp lens only has very little thickness accordingly.Preferred display and phosphor screen are so-called flat-screen CRT monitors, are applied to notebook computer, particularly in the planar backlight device.
According to the present invention, can use according to structure, arrangement and the general structure of the back light system of EEFL type fluorescent lamp of the present invention unrestricted.Can use each back lighting device that can expect, that the professional person knows.Only as an example, will describe some back lighting devices below, yet the present invention is not limited to this.
According to the first change scheme of back lighting device, for example the preferred setting parallel to each other of two or more fluorescent lamps and preferably be in base plate or carrier board and cover plate or substrate or substrate between.At this moment, one or more grooves are set in carrier board by rights, in this groove, put into one or more illuminators.Each groove preferably respectively has a fluorescent lamp.The light that (a plurality of) fluorescent lamp is launched is reflected on display or screen.
According to this change scheme, advantageously, on the carrier board of this reflection, that is to say particularly and in one or more groove, be provided with the reflector, this reflector is as one type the reflector light launched on the carrier board direction by lamp of scattering equably, and therefore is used for illuminating equably display or phosphor screen.Can use any plate commonly used that is used for this purpose or sheet as substrate or cover plate or cover plate, can play a part as the light allocation units or only play covering according to system structure and this plate of application purpose or sheet.So substrate or cover plate or cover plate can be for example opaque diffusion sheet or transparent sheet.
Device according to the first change scheme is preferably applied to bigger display, as television set.
According to being used for possible second kind of change scheme backlight, fluorescent lamp of the present invention also can for example be arranged on outside the light allocation units.One or more illuminator so for example can be located at display or phosphor screen outside, and wherein by rights by means of the plate as the transmission light of optical conductor, promptly so-called LGP (light guide plate) exports light equably and is coupled on display or the phosphor screen.The plate of this transmission light has for example rough surface, and light is exported coupling by this surface.
In a kind of preferred design of the third change scheme of back light system, for example there is the chamber of sealing the unit that produces light, and its top is limited by wall by carrier-pellet and in the side by the sheet that preferably has structure, below.For example, fluorescent lamp is positioned at the side of this unit.The chamber of this sealing can further be subdivided into each radiant chamber, and it can contain the Discharge illuminating material, and this material for example is coated on the carrier-pellet by preset thickness.According to system configuration, opaque diffusion sheet or transparent sheet or analog also can be used as cover plate or cover plate.
Description of drawings
1 the present invention is described in detail with reference to the accompanying drawings below.Show:
Fig. 1 is according to the preferred embodiment of EEFL type fluorescent lamp of the present invention.
Embodiment
Fig. 1 is the schematic diagram according to the preferred embodiment of the EEFL type fluorescent lamp of aforementioned invention.
Shown here a kind of according to of the present invention, miniature especially fluorescent lamp 100, it is by outer casing shell 110, and hard contact 120 (being designed to for example form of external metal cap) and discharge gas 130 (it is in the inside of EEFL type fluorescent lamp 100) are formed.Use mist as discharge gas 130 according to particularly preferred embodiment.Therefore, in fact formed capacitor in the inside of outer casing shell 110, by this capacitor, electrical power is coupled as alternating voltage.Outer casing shell 110 is not only as the insulator in this capacitor, and the inner surface here also has other function as cathode material.Move and be neutralized there to inner surface from the ion 140 of discharge gas 130 as the outer casing shell 110 of electrode material.According to the present invention, outer casing shell 110 has at least a according to alloy of the present invention and/or a kind of undercoating (not shown), and this undercoating contains at least aly to be formed according to alloy of the present invention or by it.Therefore, based on low electron work functon W arranged according to the present invention
aInduce the ejaculation of secondary electron 150.This or finish by outer casing shell 110 itself or by the coating (undercoating) that applies on the outer casing shell 110 or by coating and outer casing shell.When the ion 140 from gaseous plasma 130 was neutralized on the surface of negative electrode, because the doping and/or the internally coated doping of outer casing shell 110, the possibility of emission secondary electron 150 obviously increased.Therefore, realized being provided with the efficient of fluorescent lamp big as far as possible.In addition, compare, produced the obvious low starting resistor of EEFL type fluorescent lamp with EEFL type fluorescent lamp well known in the prior art.
According to the present invention, the corresponding EEFL type fluorescent lamp of optimizing that provides first, its outer casing shell is designed to: the alkaline earth ion of doped with high concentration or adulterated al compound and/or have at least a heavy metal element that has provided and/or have and comprise at least a aforementioned alloy or by its undercoating of forming.By with the amount that is fit to the outer casing shell of EEFL type fluorescent lamp be positioned among the inner surface and/or at least a alloy is set, preferred＜5eV based at＜6eV, preferred especially 0eV＜W
a＜4eV, preferred fully especially 0eV＜W
aLow electron work functon W in the＜3eV scope
a, realized making the high likelihood that penetrates secondary electron to become possibility.To this, provide the outer casing shell of the customization that is used for EEFL type fluorescent lamp Optimizing operation first.Except big as far as possible efficient is set, it is low as far as possible to have realized that in addition starting resistor with lamp is provided with ground.By low starting resistor, for example in flat-screen CRT monitor, needn't re-use defective particularly high voltage, therefore, can obviously reduce security risk.Because obviously reduce ineffective time, thereby produced higher efficient.
Calculate embodiment
The work function of Theoretical Calculation MgO and BaO monocrystalline
In order to support the idea of high BaO and MgO content glass, we have calculated the work function for the plane of crystal of BaO and MgO monocrystalline.In [H.D.Hagstrum, Phys.Rev.122,83,1961], provided excellent detailed description for how calculating work function.Here, our the just work function φ that mentions and the simple approximation relation between the secondary electron yield γ.
γ～E
i-2φ (1)
Wherein, E
iBe ionization energy (for example, the E that has of Xe of discharge plasma intermediate ion
i XeBe 12.13eV).This means that the material with low work function will show big secondary rate, therefore show the low start voltage and the high efficiency of discharge lamp.Work function is defined as and is used for making electronics to enter the energy of vacuum on every side from the effusion of massive material surface.This energy can be used as electron energy in the vacuum deduct solid interior Fermi can difference and calculate.Usually, desirable crystalline material has the cycle of lattice constant a, and intercycle is splendid in the space.At near surface, structural change mainly is two or three initial surperficial atomic layers.Calculating is following carrying out, and is in commercial density functional theory (DFT) bag VASP[G.Kresse, J.Furthmueller, Phys.Rev.B54,11169,1996] carry out down.Being used for the desirable period crystals first step, under the nuclear background of positively charged, the gross energy that minimizes structure by the approximate solution with the main body Schroedinger equation of electronics reaches construction minimizes.In second step, form by pile up a large amount of elementary cells in the direction mutually at the top along the surface of specific direction with superposeing.At last, be far longer than add-on one vacuum of length, electron wave function decay thereon with thickness.Produce
(=10
-9M) thickness is enough.As next step, periodic boundary condition is applied to causing piling up along a pair of surface of specific direction.After this, have to carry out the structure Relaxation of atom site.At last, work function can be used as the vacuum electronic energy and calculates near the difference of surperficial Fermi's energy.This method and problem thereof also are described in [S.Picozzi, R.Asahi, C.B.Geller, A.J.Freeman, Phys.Rev.Lett.89,197601,2002].The result of BaO and MgO has been shown in table 1.This is dry straight has met [J.Y.Lim, J.S.Oh, B.D.Ko, J.W.Cho, S.O.Kang, G.Cho, H.S.Uhm, E.H.Choi, J.Appl.Phys.94,1,2003] experiment, and explained the big secondary rate [E.H.Choi of BaO and MgO, J.Y.Lim, Y.G.Kim, J.J.Ko, D.I.Kim, C.W.Lee, G.Cho, J.Appl.Phys.86,6525,1999].Yet this experiment is very difficult to carry out.Reason is, increases in the insulator surface charges, and only progressively to estimate work function from a large amount of experimental arrangements with the different bombarding ions discharge plasma.Yet, at [J.Y.Lim, J.S.Oh, B.D.Ko, J.W.Cho, S.O.Kang, G.Cho, H.S.Uhm, E.H.Choi, J.Appl.Phys.94,1,2003] measured the experiment value of MgO monocrystalline in, it is 4.22eV in (111)-direction, be 4.94eV and be 5.07eV in (100)-direction, well met the calculated value of table 1 in (110)-direction.Therefore, this also can accept, and promptly the calculated value of BaO is rational.
Table 1: for the calculated value of the work function of different crystal orientation
| Material | Surface normal | Work function/eV | The measurement result reference */eV |
| BaO | (111) | 4.05 | |
| BaO | (100) | 4.31 | |
| BaO | (110) | 6.38 | |
| MgO | (111) | 6.82 | 4.22 |
| MgO | (100) | 4.54 | 5.07 |
| MgO | (110) | 5.23 | 4.94 |
*......[J.Y.Lim，J.S.Oh，B.D.Ko，J.W.Cho，S.O.Kang，G.Cho，H.S.Uhm，E.H.Choi，J.Appl.Phys.94，1，2003]
All calculated values have met the experiment of one of list of references [J.Y.Lim, J.S.Oh, B.D.Ko, J.W.Cho, S.O.Kang, G.Cho, H.S.Uhm, E.H.Choi, J.Appl.Phys.94,1,2003] well.
Claims (61)
1. an EEFL type fluorescent lamp that is used for display or phosphor screen background illumination comprises glass shell, wherein
(1) described glass shell has low electron work functon W
aFor＜6eV, and contain at least a alloy, be selected from:
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 3-80 weight % scope;
And/or
(2) described glass shell has undercoating, and described undercoating has low electron work functon W
aFor＜6eV wherein, described undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, BaO, Bi
2O
3And/or the PbO composition, content is in 3-80 weight % scope.
2. EEFL type fluorescent lamp according to claim 1 comprises glass shell, wherein
(1) described glass shell has low electron work functon W
aBe 0eV＜W
a＜5eV, and contain at least a alloy, be selected from:
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 5-75 weight % scope;
And/or
(2) described glass shell has undercoating, and described undercoating has low electron work functon W
aBe 0eV＜W
a＜5eV, wherein, described undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, BaO, Bi
2O
3And/or the PbO composition, content is in 5-75 weight % scope.
3. EEFL type fluorescent lamp according to claim 2 comprises glass shell, wherein
(1) described glass shell has low electron work functon W
aBe 0eV＜W
a＜3eV, and contain at least a alloy, be selected from:
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 10-65 weight % scope;
And/or
(2) described glass shell has undercoating, and described undercoating has low electron work functon W
aBe 0eV＜W
a＜3eV, wherein, described undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, BaO, Bi
2O
3And/or the PbO composition, content is in 10-65 weight % scope.
4. EEFL type fluorescent lamp according to claim 1 is characterized in that, in described glass shell, be selected from following being limited to 〉=15 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤80 weight %.
5. EEFL type fluorescent lamp according to claim 4 is characterized in that, in described glass shell, be selected from following being limited to 〉=30 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤70 weight %.
6. EEFL type fluorescent lamp according to claim 1 is characterized in that, in described undercoating, be selected from following being limited to 〉=15 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤80 weight %.
7. EEFL type fluorescent lamp according to claim 6 is characterized in that, in described undercoating, be selected from following being limited to 〉=30 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤70 weight %.
8. EEFL type fluorescent lamp according to claim 1 is characterized in that, described EEFL type fluorescent lamp has optimised efficient.
9. EEFL type fluorescent lamp according to claim 1 is characterized in that, described EEFL type fluorescent lamp has low start voltage.
10. EEFL type fluorescent lamp according to claim 1, it is characterized in that, described glass shell and/or described undercoating contain the alloy that one or more are selected from described group (a) and/or group (b) with such amount, promptly have high secondary rate γ＞0.01.
11. EEFL type fluorescent lamp according to claim 10 is characterized in that, described secondary rate γ＞0.1.
12. EEFL type fluorescent lamp according to claim 1 is characterized in that described glass shell and/or described undercoating have high density of electronic states in valence band.
13. EEFL type fluorescent lamp according to claim 1 is characterized in that, becomes possibility in order to make undercoating on fluorescent pigment, described undercoating has＞and the band gap of 4eV.
14. EEFL type fluorescent lamp according to claim 1 is characterized in that, described EEFL type fluorescent lamp comprises the mist that contains neon.
15. EEFL type fluorescent lamp according to claim 14 is characterized in that, described mist has the neon in 10-99 volume % scope.
16. EEFL type fluorescent lamp according to claim 1 is characterized in that the undercoating of described glass shell is the part undercoating.
17. according to each described EEFL type fluorescent lamp among the claim 1-16, it is characterized in that, apply described undercoating to the thickness of 10 μ m with 0.3nm.
18. an EEFL-fluorescent lamp-glass shell, wherein
(1) described glass shell has low electron work functon W
aFor＜6eV, and contain at least a alloy, be selected from:
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 3-80 weight % scope;
And/or
(2) described glass shell has undercoating, and described undercoating has low electron work functon W
aFor＜6eV, wherein, described undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, BaO, Bi
2O
3And/or the PbO composition, content is in 3-80 weight % scope.
19. EEFL-fluorescent lamp-glass shell according to claim 18, wherein
(1) described glass shell has low electron work functon W
aBe 0eV＜W
a＜5eV, and contain at least a alloy, be selected from:
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 5-75 weight % scope;
And/or
(2) described glass shell has undercoating, and described undercoating has low electron work functon W
aBe 0eV＜W
a＜5eV, wherein, described undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, BaO, Bi
2O
3And/or the PbO composition, content is in 5-75 weight % scope.
20. EEFL-fluorescent lamp-glass shell according to claim 19, wherein (1) described glass shell has low electron work functon W
aBe 0eV＜W
a＜3eV, and contain at least a alloy, be selected from:
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 10-65 weight % scope;
And/or
(2) described glass shell has undercoating, and described undercoating has low electron work functon W
aBe 0eV＜W
a＜3eV, wherein, described undercoating comprises at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, BaO, Bi
2O
3And/or the PbO composition, content is in 10-65 weight % scope.
21. EEFL-fluorescent lamp-glass shell according to claim 18, it is characterized in that, in described glass shell, be selected from following being limited to 〉=15 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤80 weight %.
22. EEFL-fluorescent lamp-glass shell according to claim 21, it is characterized in that, in described glass shell, be selected from following being limited to 〉=30 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤70 weight %.
23. EEFL-fluorescent lamp-glass shell according to claim 18, it is characterized in that, in described undercoating, be selected from following being limited to 〉=15 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤80 weight %.
24. EEFL-fluorescent lamp-glass shell according to claim 23, it is characterized in that, in described undercoating, be selected from following being limited to 〉=30 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤70 weight %.
25. EEFL-fluorescent lamp-glass shell according to claim 23, it is characterized in that, described glass shell and/or described undercoating contain the alloy that one or more are selected from described group (a) and/or group (b) with such amount, promptly have high secondary rate γ＞0.01.
26. EEFL-fluorescent lamp-glass shell according to claim 25 is characterized in that, described secondary rate γ＞0.1.
27. EEFL-fluorescent lamp-glass shell according to claim 18 is characterized in that, described glass shell and/or described undercoating have high density of electronic states in valence band.
28. EEFL-fluorescent lamp-glass shell according to claim 18 is characterized in that, becomes possibility in order to make undercoating on fluorescent pigment, described undercoating has＞and the band gap of 4eV.
29. EEFL-fluorescent lamp-glass shell according to claim 18 is characterized in that, the undercoating of described glass shell is the part undercoating.
30. according to each described EEFL-fluorescent lamp-glass shell among the claim 18-29, it is characterized in that, apply described undercoating to the thickness of 10 μ m with 0.3nm.
31. one kind by spraying, immerse, spray or calcining contains at least a alloy or the undercoating made formed by at least a alloy according to the internally coated method that is in inner surface of each described EEFL type fluorescent lamp glass shell in the aforementioned claim 18 to 30.
32. manufacture method according to claim 31, it is characterized in that, described undercoating is to finish by the slurries that immersion has a powder, and described powder contains one or more alloys that are selected from described group (a) and/or group (b) or is made up of one or more alloys that are selected from described group (a) and/or group (b).
33. manufacture method according to claim 31, it is characterized in that, spray the described inner surface of described glass shell with the slurries that have powder, described powder contains one or more alloys that are selected from described group (a) and/or group (b) or is made up of one or more alloys that are selected from described group (a) and/or group (b).
34. one kind according to each described EEFL type fluorescent lamp in the aforementioned claim 1 to 17 in the background illumination of all types display or the application in the back light system.
35. application according to claim 34 is used for initiatively or passive display.
36., be used for computer display, TFT-device, LCD-display, plasma-display, scanner, advertisement screen, Medical Instruments, aerospace equipment, airmanship equipment, call screen, and PDA according to claim 34 or 35 described application.
37. an application that is used for the glass shell of multiple application, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aFor＜6eV,
Wherein said glass shell contains at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 3-80 weight % scope.
38. according to the described application of claim 37, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜5eV, wherein said glass shell contains at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 5-75 weight % scope.
39. according to the described application of claim 38, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜3eV, wherein said glass shell contains at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 10-65 weight % scope.
40. according to the described application of claim 37, it is characterized in that, in glass shell, be selected from following being limited to 〉=15 weight % that the summation of described amount of the described alloy of described group (a) and group (b) has and have on be limited to≤80 weight %.
41. according to the described application of claim 40, it is characterized in that, in described glass shell, be selected from following being limited to 〉=30 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤70 weight %.
42., it is characterized in that described glass shell contains the alloy that one or more are selected from described group (a) and/or group (b) with such amount, promptly has high secondary rate γ＞0.01 according to each described application in the claim 37 to 41.
43., it is characterized in that described glass shell has high density of electronic states in valence band according to each described application in the claim 37 to 41.
44. a application that is used for multiple application with internally coated glass shell, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aFor＜6eV, wherein said undercoating contains at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 3-80 weight % scope.
45. according to the described application of claim 44, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜5eV,
Wherein said undercoating contains at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 5-75 weight % scope.
46. according to the described application of claim 45, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜3eV, wherein said undercoating contains at least a alloy or is made up of at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 10-65 weight % scope.
47. according to the described application of claim 44, it is characterized in that, in described undercoating, be selected from following being limited to 〉=15 weight % that the summation of described amount of the described alloy of described group (a) and group (b) has and have on be limited to≤80 weight %.
48. according to the described application of claim 47, it is characterized in that, in described undercoating, be selected from following being limited to 〉=30 weight % that the summation of amount of the described alloy of described group (a) and group (b) has and have on be limited to≤70 weight %.
49., it is characterized in that described undercoating contains the alloy that one or more are selected from described group (a) and/or group (b) with such amount, promptly has high secondary rate γ＞0.01 according to each described application in the claim 44 to 48.
50., it is characterized in that described secondary rate γ＞0.05 according to the described application of claim 49.
51., it is characterized in that described secondary rate γ＞0.1 according to the described application of claim 50.
52., it is characterized in that described undercoating has high density of electronic states in valence band according to each described application in the claim 44 to 48.
53., it is characterized in that according to each described application in the claim 44 to 48, on fluorescent pigment, become possibility in order to make undercoating, described undercoating has＞band gap of 4eV.
54. according to each described application in the claim 44 to 48, it is characterized in that, apply described undercoating with thickness from 0.3nm to 10 μ m.
55. a glass shell that is used for multiple application, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe＜6eV, wherein said glass shell is by adding at least a alloy to the raw material that is used for making glass shell and making glass shell and make, and described alloy is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 3-80 weight % scope.
56. according to the described glass shell of claim 55, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜5eV, wherein said glass shell contains at least a alloy, is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 5-75 weight % scope.
57. according to the described glass shell of claim 56, low work function W in the described multiple application
aBe necessary, wherein said low electronics is selected merit W
aBe 0eV＜W
a＜3eV, wherein said glass shell contains at least a alloy, is selected from-organize (a), by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 10-65 weight % scope.
58. a undercoating that is used for the glass shell of multiple application, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe＜6eV, wherein said undercoating is by internally coated raw material add at least a alloy and the coated glass shell is made to being used to make, and described alloy is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 3-70 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 3-80 weight % scope.
59. according to the described undercoating of claim 58, low work function W in described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜5eV, wherein said undercoating is by internally coated raw material add at least a alloy and the coated glass shell is made to being used to make, and described alloy is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 5-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 5-75 weight % scope.
60. according to the described undercoating of claim 59, low work function W in the described multiple application
aBe necessary, wherein said low electron work functon W
aBe 0eV＜W
a＜3eV, wherein said undercoating is by internally coated raw material add at least a alloy and the coated glass shell is made to being used to make, and described alloy is selected from
-group (a) is by BaO, CaO, MgO, SrO, MgF
2, AlN, Al
2O
3And/or Mg
1-x-ySr
xCa
yO forms, and content is in 10-60 weight % scope; And/or
-group (b) is by La
2O
3, Bi
2O
3, BaO and/or PbO form, content is in 10-65 weight % scope.
61., it is characterized in that described undercoating is the part undercoating according to each described undercoating among the claim 58-60.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006037859.8 | 2006-08-11 | ||
| DE200610039066 DE102006039066A1 (en) | 2006-08-11 | 2006-08-11 | External electrode fluorescent lamp for back illumination of displays or screens has casing made from glass with work function for electrodes below 5 eV and containing dopants, e.g. barium oxide or bismuth oxide |
| DE102006039066.0 | 2006-08-11 | ||
| DE200610037859 DE102006037859A1 (en) | 2006-08-11 | 2006-08-11 | External electrode fluorescent lamp for background lighting of displays or screens, comprises a covering glass having an inner coating, which contains doping materials, and a gas mixture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101123167A CN101123167A (en) | 2008-02-13 |
| CN101123167B true CN101123167B (en) | 2011-03-30 |
Family
ID=38922137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101380402A Expired - Fee Related CN101123167B (en) | 2006-08-11 | 2007-08-02 | External electrode fluorescent lamp (EEFL) with optimized operating efficiency |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101123167B (en) |
| DE (1) | DE102006037859A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208408A (en) * | 2013-04-12 | 2013-07-17 | 中国航空工业集团公司北京航空制造工程研究所 | Method for suppressing secondary electron emission coefficients |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672239A (en) * | 2002-07-29 | 2005-09-21 | 皇家飞利浦电子股份有限公司 | Low-pressure mercury vapor discharge lamp |
| CN1781179A (en) * | 2002-10-04 | 2006-05-31 | 皇家飞利浦电子股份有限公司 | Low-pressure mercury vapor discharge lamp |
-
2006
- 2006-08-11 DE DE200610037859 patent/DE102006037859A1/en not_active Withdrawn
-
2007
- 2007-08-02 CN CN2007101380402A patent/CN101123167B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672239A (en) * | 2002-07-29 | 2005-09-21 | 皇家飞利浦电子股份有限公司 | Low-pressure mercury vapor discharge lamp |
| CN1781179A (en) * | 2002-10-04 | 2006-05-31 | 皇家飞利浦电子股份有限公司 | Low-pressure mercury vapor discharge lamp |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2000-169841A 2000.06.20 |
| JP特开平8-273589A 1996.10.18 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101123167A (en) | 2008-02-13 |
| DE102006037859A1 (en) | 2008-02-14 |
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