CN101114697A - Organic luminous component and manufacturing method therefor - Google Patents

Organic luminous component and manufacturing method therefor Download PDF

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CN101114697A
CN101114697A CNA2006100294725A CN200610029472A CN101114697A CN 101114697 A CN101114697 A CN 101114697A CN A2006100294725 A CNA2006100294725 A CN A2006100294725A CN 200610029472 A CN200610029472 A CN 200610029472A CN 101114697 A CN101114697 A CN 101114697A
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refractive index
layer
organic light
dielectric material
gradient layer
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黄呈加
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

The invention provides an organic luminous component together with the related processing method, which is characterized in that on a transparent substrate, at least one dielectric material with low refractive index and a transparent conducting material or a dielectric material with high refractive index are in vapor deposition in order to form a single-layered gradual changing layer of refractive index on the transparent substrate and the gradual changing layer of refractive index is provided with a transparent conducting layer as anode that is provided with an organic luminous layer which is provided with a metal conducting layer as cathode. As the refractive index value of upper surface and lower surface of the gradual changing layer of refractive index is the same with that of the transparent substrate and the transparent conducting layer, and the refractive index value of lower surface of the gradual changing layer of refractive index increases following the vertical height and reaches the refractive index value of upper surface of the gradual changing layer of refractive index, the refractive index value of gradual changing layer of refractive index is a smoothing and continuous refractive index to effectively reduce interface reflection and improve luminous efficiency, luminous brightness, and prolong the service life of the organic luminous component.

Description

Organic light emitting device and method for manufacturing the same
Technical Field
The present invention relates to an organic light emitting device and a method for fabricating the same, and more particularly, to an organic light emitting device having a single-layer graded refractive index layer and a method for fabricating the same.
Background
In 1987, c.w.tang and s.a.vanslyke developed a dual-layer amorphous organic light emitting device (u.s.pat.no. 4,885, 211) by thermal evaporation, and the light emitting efficiency of the organic light emitting device directly affected the light emitting brightness and lifetime of the device.
The prior art (U.S. Pat. No.6,586,876) shows that two dielectric materials with high and low refractive indexes are used to combine into a plurality of mixed materials under different volume fractions (volume fractions), and the refractive index is between 1.52 and 1.9. The mixed materials are sequentially deposited between the glass substrate and the transparent conductive layer to obtain a multi-composite-layer structure (multi-composite films structure) with the refractive index distributed from 1.52 to 1.9, wherein the two ends of the multi-composite-layer structure are connected with the transparent conductive layer and the transparent substrate, and the refractive index is respectively consistent with that of the transparent conductive layer and the transparent substrate. The refractive index of the multi-composite-layer structure gradually increases from the refractive index value of the transparent substrate of 1.52 to the refractive index value of the transparent conductive layer of 1.90 as the thickness increases. Because such multi-layer structures have a smoother (smooth) refractive index profile, they are more effective in reducing interfacial reflections than a single layer homogeneous (homogenous) material with a fixed refractive index. From an optical point of view, the interface reflection (interface reflection) between two dielectric layers is mainly caused by the refractive index difference (reactive index difference), which affects the transmission and reflection of the interface, and can be known from the following equation:
Figure A20061002947200041
wherein r is m,m+1 The interfacial reflection coefficient (fresnel) between the mth layer and the (m + 1) th layer,
Figure A20061002947200042
is an optical complex refractive index
Figure A20061002947200043
N is a refractive index (refractive index) and k is an extinction coefficient (extinction coefficient), and an excessively high interface reflection affects the external light emission efficiency of the device. Although the multilayer structure with refractive index distribution can effectively improve the light emitting efficiency of the organic light emitting device, the multilayer structure is not only quite complex in manufacturing, but also the manufacturing cost is improved.
Therefore, the present invention provides an organic light emitting device and a method for manufacturing the same to overcome the above-mentioned drawbacks.
Disclosure of Invention
The present invention is directed to an organic light emitting device and a method for fabricating the same, so as to improve the light emitting efficiency of the organic light emitting device.
Another objective of the present invention is to provide an organic light emitting device and a method for manufacturing the same, so as to improve the brightness of the organic light emitting device.
It is another objective of the present invention to provide an organic light emitting device and a method for manufacturing the same to prolong the lifetime of the organic light emitting device.
The invention provides an organic light-emitting component, which is provided with a transparent substrate, a single-layer refractive index gradient layer, a transparent conductive layer, an organic light-emitting layer and a metal conductive layer from bottom to top in sequence, wherein the refractive index gradient layer is manufactured by a vapor deposition technology, refractive index values of the lower surface and the upper surface of the refractive index gradient layer are respectively the same as those of the transparent substrate and the transparent conductive layer, the refractive index value of the refractive index gradient layer is approximate to that of the upper surface of the refractive index gradient layer along with the increase of the longitudinal height from the refractive index value of the lower surface of the refractive index gradient layer, and the interface reflection between the transparent conductive layer and the transparent substrate is effectively reduced by smooth and continuous refractive index distribution.
The invention can effectively reduce interface reflection, improve the luminous efficiency and brightness of the organic light-emitting component and prolong the service life.
The invention is further described with reference to the following figures and examples.
Drawings
Fig. 1 is a schematic perspective view of an organic light emitting device according to the present invention.
FIG. 2 is a schematic flow chart of the present invention for fabricating an organic light emitting device.
Description of the reference symbols
2 organic light emitting device
20 transparent substrate
22 single-layer type refractive index gradient layer
24 transparent conductive layer
26 organic light emitting layer
28 Metal conductive layer
Detailed Description
Referring to fig. 1, which is a schematic perspective view of an organic light emitting device 2 according to the present invention, the organic light emitting device includes a transparent substrate 20, which may be a glass substrate or a plastic substrate; a single-layer graded-index layer 22, which is formed by depositing at least two materials on the transparent substrate 20 by vapor deposition, wherein the at least two materials are formed by a transparent conductive material and at least one dielectric material with a low refractive index lower than 1.7, or at least one dielectric material with a low refractive index lower than 1.7 and at least one dielectric material with a high refractive index higher than 1.9, the dielectric material with a low refractive index is selected from silicon oxide, magnesium fluoride or calcium fluoride, and the dielectric material with a high refractive index is selected from titanium oxide, tantalum oxide or niobium oxide; a transparent conductive layer 24 as an anode located on the surface of the graded refractive index layer 22, the refractive index value of the upper surface of the graded refractive index layer 22 is the same as that of the transparent conductive layer 24, and the refractive index value of the graded refractive index layer 22 is close to that of the upper surface of the graded refractive index layer 22 as the refractive index value of the lower surface of the graded refractive index layer 22 increases with the longitudinal height, so as to avoid the light emitting loss (luminescence loss) caused by the interface reflection between the transparent conductive layer 24 and the transparent substrate 20, the graded refractive index layer 22 is added between the transparent conductive layer 24 and the transparent substrate 20, thereby forming the anti-reflection (anti-reflection) effect. The refractive index value of the graded-index layer 22 is:
Figure A20061002947200061
wherein n is substrate And n ITO The refractive indices of the transparent substrate 20 and the transparent conductive layer 24, respectively; an organic light emitting layer 26 disposed on the transparent conductive layer 24; a metal conductive layer 28 is disposed on the organic light emitting layer 26 as a cathode.
In order to show the manufacturing method of the organic device more clearly, please refer to fig. 1 and fig. 2, first, as shown in step S10, a transparent substrate 20 is provided; then, as shown in step S20, at least two materials are selected to perform a co-evaporation or co-sputtering vapor deposition step, so as to form a graded-index layer 22 on the transparent substrate 20, wherein the refractive index value of the lower surface of the graded-index layer 22 is the same as the refractive index value of the transparent substrate 20, the material selected for vapor deposition can be selected from one of a combination of a transparent conductive material and at least one low-refractive-index dielectric material with a refractive index lower than 1.7, and a combination of at least one low-refractive-index dielectric material with a refractive index lower than 1.7 and at least one high-refractive-index dielectric material with a refractive index higher than 1.9, and in order to improve the uniformity of the deposition rate of the graded-index layer 22, many proposed improvement methods can be adopted, such as using a rotating base (rotating substrate), a magnetic field control (magnetic field control), or a reactive gas flow field control (reactive gas field control), etc., to control the uniformity of the graded-index layer 22; then, as shown in step S30, a transparent conductive layer 24 is disposed on the gradient refractive index layer 22, the refractive index value of the upper surface of the gradient refractive index layer 22 is the same as the refractive index value of the transparent conductive layer 24, and the refractive index value of the gradient refractive index layer 22 approaches to the refractive index value of the upper surface of the gradient refractive index layer 22 from the refractive index value of the lower surface of the gradient refractive index layer 22 along with the increase of the longitudinal height; then, as shown in step S40, an organic light emitting layer 26 is formed on the transparent conductive layer 24; finally, in step S50, a metal conductive layer 28 is formed on the organic light emitting layer 26 to serve as a cathode.
To be clearer as the vapor deposition rate n of the vapor deposition of the refractive index gradient layer 22 on the transparent substrate 20, it can be expressed by using a cosine law (u.s.pat. No.6,493,070) which is:
Figure A20061002947200071
wherein D is the thickness of the graded index layer 22, m is the emission mass (emission mass), u is the density (intensity) of the deposition layer, Φ is the emission angle (emission angle), θ is the angle between the emission line (emission line) and the normal line (normal line) of the transparent substrate 20, and the thickness of the graded index layer 22 can be regressed (regression) by the following method:
Figure A20061002947200073
wherein r is the interface reflection coefficient, subscripts 0, 1, 2 represent air, graded index layer 22, and transparent substrate 20, respectively, and  1 Phase difference of the refractive index gradation layer 22 (phaseshift):
1 =4πn 1 Dcosθ/λ,
wherein n is 1 The refractive index of the gradient refractive index layer 22, D the thickness of the gradient refractive index layer 22, θ the incident angle, and λ the wavelength. Since the refractive index has a dispersion characteristic, for the transparent substrate 20 belonging to a dielectric material, such as silicon oxide, it can be expressed using the Cauchy equation:
Figure A20061002947200074
Figure A20061002947200075
wherein n is 、k Respectively, the refractive index and extinction coefficient at infinite wavelength.
The present invention utilizes the distribution characteristic of deposition rate to deposit the refractive index gradient layer 22 with volume fraction distribution by the co-evaporation or co-sputtering deposition vapor deposition of at least one low refractive index dielectric material and a transparent conductive material, or at least one low refractive index dielectric material and at least one high refractive index dielectric material, the refractive index gradient layer 22 has the refractive index distribution from low to high due to the influence of volume fraction, and the smooth and continuous refractive index distribution effectively reduces the interface reflection between the transparent conductive layer and the transparent substrate, thereby improving the external luminous efficiency of the organic luminous component 2.
The above description is only for the purpose of illustrating a preferred embodiment of the present invention and should not be taken as limiting the scope of the present invention, therefore, all equivalent changes and modifications in the shape, structure, characteristics and spirit of the present invention should be covered by the appended claims.

Claims (14)

1. An organic light-emitting assembly, comprising:
a transparent substrate;
a transparent conductive layer located above the transparent substrate as an anode;
a single-layer refractive index gradient layer located between the transparent substrate and the transparent conductive layer, wherein the refractive index values of the lower surface and the upper surface of the refractive index gradient layer are respectively the same as those of the transparent substrate and the transparent conductive layer, and the refractive index value of the refractive index gradient layer is approximate to that of the upper surface of the refractive index gradient layer along with the increase of the longitudinal height from the refractive index value of the lower surface of the refractive index gradient layer;
an organic luminescent layer arranged on the transparent conductive layer; and
a metal conductive layer arranged on the organic light-emitting layer and used as a cathode.
2. The organic light emitting assembly of claim 1, wherein: the transparent substrate is selected from a glass substrate or a plastic substrate.
3. The organic light emitting assembly of claim 1, wherein: the refractive index gradient layer is made of transparent conductive materials and at least one dielectric material with the refractive index lower than 1.7.
4. The organic light emitting assembly of claim 1, wherein: the refractive index gradient layer is composed of a low refractive index dielectric material with at least a refractive index lower than 1.7 and a high refractive index dielectric material with at least a refractive index higher than 1.9.
5. An organic light-emitting assembly according to claim 3 or 4, wherein: the low refractive index dielectric material with the refractive index lower than 1.7 is selected from silicon oxide, magnesium fluoride and calcium fluoride.
6. The organic light emitting assembly of claim 4, wherein: the high-refractive-index dielectric material with the refractive index higher than 1.9 is selected from titanium oxide, tantalum oxide and niobium oxide.
7. The organic light emitting assembly of claim 1, wherein: the refractive index gradient layer is a co-evaporation or co-sputtering vapor deposition layer.
8. A method of manufacturing an organic light emitting device, comprising the steps of:
providing a transparent substrate;
performing vapor deposition on at least one low-refractive-index dielectric material and a transparent conductive material, and at least one of the low-refractive-index dielectric material and the high-refractive-index dielectric material on the transparent substrate to form a single-layer refractive index gradient layer, wherein the refractive index value of the lower surface of the refractive index gradient layer is the same as that of the transparent substrate;
forming a transparent conducting layer on the refractive index gradient layer, wherein the refractive index value of the upper surface of the refractive index gradient layer is the same as that of the transparent conducting layer, and the refractive index value of the refractive index gradient layer is gradually close to that of the upper surface of the refractive index gradient layer as the refractive index value of the lower surface of the refractive index gradient layer increases along with the longitudinal height;
forming an organic light emitting layer on the transparent conductive layer; and
a metal conductive layer is formed on the organic light-emitting layer as a cathode.
9. The method of manufacturing an organic light-emitting element according to claim 8, wherein: the transparent substrate is selected from a glass substrate or a plastic substrate.
10. The method of manufacturing an organic light-emitting element according to claim 8, wherein: the refractive index gradient layer is made of transparent conductive materials and at least one dielectric material with the low refractive index lower than 1.7.
11. The method of manufacturing an organic light-emitting element according to claim 8, wherein: the refractive index gradient layer is composed of a low refractive index dielectric material with at least a refractive index lower than 1.7 and a high refractive index dielectric material with at least a refractive index higher than 1.9.
12. The method of manufacturing an organic light-emitting element according to claim 10 or 11, wherein: the low refractive index dielectric material with the refractive index lower than 1.7 is selected from silicon oxide, magnesium fluoride and calcium fluoride.
13. The method of manufacturing an organic light-emitting element according to claim 11, wherein: the high-refractive-index dielectric material with the refractive index higher than 1.9 is selected from titanium oxide, tantalum oxide and niobium oxide.
14. The method of manufacturing an organic light-emitting element according to claim 8, wherein: the vapor deposition method is a co-evaporation or co-sputtering vapor deposition method.
CNA2006100294725A 2006-07-27 2006-07-27 Organic luminous component and manufacturing method therefor Pending CN101114697A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101814560A (en) * 2009-02-23 2010-08-25 涂爱国 Optical medium used for photoconducting device, luminescent device and solar battery
CN102569658A (en) * 2010-12-27 2012-07-11 康佳集团股份有限公司 OLED (Organic Light Emitting Diode) device and manufacturing method thereof
CN103000781A (en) * 2011-09-08 2013-03-27 晶扬科技股份有限公司 Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer
US8427747B2 (en) 2010-04-22 2013-04-23 3M Innovative Properties Company OLED light extraction films laminated onto glass substrates
CN103824943A (en) * 2012-11-19 2014-05-28 海洋王照明科技股份有限公司 Solar cell device and preparation method thereof
CN104124326B (en) * 2014-08-13 2017-02-22 弗洛里光电材料(苏州)有限公司 Semiconductor light emitting device optical encapsulation structure
CN107516713A (en) * 2017-09-30 2017-12-26 京东方科技集团股份有限公司 A kind of OLED luminescent devices and preparation method, display base plate, display device
CN109244253A (en) * 2017-07-11 2019-01-18 乐金显示有限公司 Use the lighting apparatus of Organic Light Emitting Diode
CN110735121A (en) * 2019-11-21 2020-01-31 江苏北方湖光光电有限公司 method for preparing unconventional refractive index mixed film based on magnetron sputtering

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101814560A (en) * 2009-02-23 2010-08-25 涂爱国 Optical medium used for photoconducting device, luminescent device and solar battery
US8427747B2 (en) 2010-04-22 2013-04-23 3M Innovative Properties Company OLED light extraction films laminated onto glass substrates
CN102569658A (en) * 2010-12-27 2012-07-11 康佳集团股份有限公司 OLED (Organic Light Emitting Diode) device and manufacturing method thereof
CN102569658B (en) * 2010-12-27 2015-10-28 康佳集团股份有限公司 A kind of OLED and preparation method thereof
CN103000781A (en) * 2011-09-08 2013-03-27 晶扬科技股份有限公司 Anti-reflecting layer with progressive refractivity and manufacture method of anti-reflecting layer
CN103824943A (en) * 2012-11-19 2014-05-28 海洋王照明科技股份有限公司 Solar cell device and preparation method thereof
CN104124326B (en) * 2014-08-13 2017-02-22 弗洛里光电材料(苏州)有限公司 Semiconductor light emitting device optical encapsulation structure
CN109244253A (en) * 2017-07-11 2019-01-18 乐金显示有限公司 Use the lighting apparatus of Organic Light Emitting Diode
CN109244253B (en) * 2017-07-11 2021-03-30 乐金显示有限公司 Lighting device using organic light emitting diode
CN107516713A (en) * 2017-09-30 2017-12-26 京东方科技集团股份有限公司 A kind of OLED luminescent devices and preparation method, display base plate, display device
CN110735121A (en) * 2019-11-21 2020-01-31 江苏北方湖光光电有限公司 method for preparing unconventional refractive index mixed film based on magnetron sputtering
CN110735121B (en) * 2019-11-21 2022-03-29 江苏北方湖光光电有限公司 Preparation method of unconventional refractive index mixed film based on magnetron sputtering

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