CN101101963B - A high status ratio inorganic film dual stabilization part and its making method - Google Patents
A high status ratio inorganic film dual stabilization part and its making method Download PDFInfo
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- CN101101963B CN101101963B CN200710044502A CN200710044502A CN101101963B CN 101101963 B CN101101963 B CN 101101963B CN 200710044502 A CN200710044502 A CN 200710044502A CN 200710044502 A CN200710044502 A CN 200710044502A CN 101101963 B CN101101963 B CN 101101963B
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Abstract
The invention is concerned with the high state ratio abio-film electricity double steady device and the making method. The structure of the device is Ag-CN1-Al and it using silver and aluminum as theelectrode. The CN1 is abio-medium layer, the thin film that made from the vacuum evaporation deposit sulfur prussic acid kalium film reacting with the partly electrode with silver bottom. The interlayer structure of the film device has the speciality of stable double inversing electricity, and the resistance ratio of the high resistance state and the low resistance state is usually 106 to 107 foldand even higher.
Description
Technical field
The invention belongs to microelectronic component and film material with function technical field, be specifically related to a kind of high state inorganic film dual stabilization part ratio, electrically-erasable and preparation method thereof that has.
Technical background
In electronic device, resistance switch (Resistive Switching) device is a noticeable especially class device.The resistance value of this device can have two kinds of different stable states, i.e. high resistance state and low resistance state.If high resistance state is defined as " off status " or " erase status ", low resistance state just can correspondingly be defined as " opening state " or " write state " so.The ratio of the resistance value that an important indicator of gauge resistor switching device performance quality is two kinds of states, promptly state of switch is than (also title state ratio).Although for different applications, can be different to the requirement of device state ratio, in principle, the state of device ratio is the bigger the better.
In preceding a patent of invention, we have introduced a kind of reversible inorganic film dual stabilization part, and device is the Cu-CN-Al structure.Cu wherein and Al are as the electrode of two-terminal device; CN is a function inorganic medium layer.This device possess stable erasable, can read performance.([1] xuwei, Tang Jiaqi, Ji Xin, a kind of erasable, the inorganic film dual stabilization part that can read and preparation method thereof, application for a patent for invention numbers 200710044248.8)
The present invention is the expansion of previous invention, and has improved performance index.
Summary of the invention:
The objective of the invention is to propose a kind of inorganic film dual stabilization part and preparation method thereof with high state ratio.But this device possesses the electrically-erasable read out function.
The inorganic film dual stabilization part of the high state ratio that the present invention proposes adopts Ag-CN1-Al sandwich, as shown in Figure 1.Wherein, the Ag of two ends and Al are as electrode; Middle CN1 is the inorganic medium layer, is the function medium layer, specifically is by the sulphur hydracid potassium film of vacuum thermal evaporation deposition and the film of the silver-colored hearth electrode reaction of part acquisition.
Preparation of devices step of the present invention is as follows: in vacuum coating equipment, with the substrate of insulation (such as: be substrate wave carrier piece), adopt a mask, deposit thicker silverskin, potassium rhodanide film and aluminium film with the vacuum thermal evaporation method successively.The area size of film and shape are by specific mask control.The thickness of silverskin is 150～300 nanometers, and the thickness of potassium rhodanide film is 5～50 nanometers, and the thickness of aluminium film is 80～150 nanometers.
In the process of preparation thin-film device, silver reacts with potassium rhodanide, spontaneous formation one deck complex function dielectric layer CN1, and thickness is 10～200 nanometers.Remaining, unreacted silverskin is as hearth electrode.
The inorganic film dual stabilization part (Ag-CN1-Al) of the high state ratio that the present invention proposes has two kinds of different Resistance states (high-resistance state and low resistance state), but drives inverse conversion with the applied voltage signal between high-impedance state and the low resistance state.Silver electrode ground connection, the aluminium electrode connects under the anodal situation: after reverse impulse voltage excited, device was in low resistance state, was equivalent to write state, i.e. one state; After the forward voltage pulse signal excited, device was in high-resistance state, was equivalent to erase status, i.e. " 0 " attitude.But the inverse conversion of two kinds of states realizes by alternately applying forward and reverse potential pulse.Two kinds of states are read with lower voltage signal.The forward erasing voltage adopts 1～4 volt usually, oppositely writes voltage and adopts-1～-4 volt usually; The absolute value that reads voltage value is lower, adopts 0.1～0.6 volt usually.
The variation of intermediate function thickness of dielectric layers and depositing operation can produce certain influence to the device electrical characteristic parameter, but the reversible bistable characteristic of different components is consistent.
The inorganic film dual stabilization part stability that the present invention proposes is fine, and two kinds of resistance values of reading state are bigger than very, and " writing-read-wipe-read " operation can repeatedly repeat (referring to Fig. 2).This thin-film device can be used as switch element and electrical storage device is used in information processing and computing field.Particularly, because structure and technology are simple, cost is low, and is with practical value at mobile phone and MP3 field.
Description of drawings
Fig. 1 is the structural representation of the inorganic film dual stabilization part of high state ratio, Ag-CN1-Al.
Fig. 2 is continuous " reading-write-read-wipe " characteristic diagram of Ag-CN1-Al thin-film device.Wherein, read voltage-0.1V, write voltage-2V, erasing voltage 2V.
Number in the figure: 1 is substrate; 2 is hearth electrode (Ag); 3 is function inorganic medium layer (CN1); 4 is top electrode (Al).
Embodiment
Embodiment is that example further describes the present invention with the Ag-CN1-Al device.
The preparation of device Ag-CN1-Al:
Wave carrier piece with cleaning is substrate, 10
-3Under the pressure of Pa magnitude with the method for vacuum thermal evaporation evaporation hearth electrode (Ag), potassium rhodanide (KSCN) and top electrode (Al) successively.Silver hearth electrode thickness greater than 150 nanometers, about 100 nanometers of the thickness of aluminium top electrode, about 10～30 nanometers of the thickness of potassium rhodanide.About 0.2 square millimeter of the area of top electrode and hearth electrode juxtaposition part.
The electrical characteristics of device Ag-CN1-Al:
" reading-write-read-wipe " characteristic of Ag-CN1-Al device realizes with the applying pulse voltage signal.Pulse voltage signal is produced by the HP33120 function generator of computer control, with the current signal of Keithley2400 sampler.Wherein, Ag connects negative pole as hearth electrode, and Al connects positive pole as top electrode.Test process carries out in the atmospheric environment of drying.
Characteristic that Fig. 2 is that this device carries out continuous " reading-write-read-wipe ".The first half is the voltage signal that adds among the figure, and the longitudinal axis on the left side is demarcated the numerical value of applied voltage: read voltage and be-0.1 volt, write voltage and be-2 volts, erasing voltage is+2 volts.The latter half of figure is the current responsing signal that records, and the longitudinal axis on the right is demarcated current values.
As can be seen from the figure, under-2 volts of voltage pulse signal effects, thin-film device is in write state; With read signal (0.1V) read this state, read current is bigger, about 10
-3A.On the contrary, under+2 volts of voltage pulse signal effects, thin-film device is in erase status; At this moment, (0.1V) act on this state, the current response that records is very little of 10 with reading signal
-9-10
-10The A magnitude.The resistance value ratio that two kinds of states are described is 10
6～10
7Doubly.In some cases, state compares even can be higher.
In the above-described embodiments, the thickness of silver electrode, aluminium electrode and KSCN changes in aforementioned range, all can obtain similar performance.
Claims (2)
1. the inorganic film dual stabilization part of a high state ratio, it is characterized in that adopting silverskin-inorganic medium layer-aluminium film sandwich, wherein, the silverskin of two ends and aluminium film are as electrode, middle inorganic medium layer is the film that is obtained by potassium rhodanide and the silver-colored hearth electrode prepared in reaction of part as the function medium layer; Described inorganic medium layer thickness is 10～200 nanometers, and the thickness of described aluminium film is 80～150 nanometers.
2. method of making the inorganic film dual stabilization part of high state ratio according to claim 1, it is characterized in that concrete steps are as follows: in vacuum coating equipment, do substrate with insulated substrate, adopt a mask, with vacuum thermal evaporation method deposition silverskin, potassium rhodanide film and aluminium film, the area size and the shape of film are controlled by mask successively; Wherein, the thickness of silverskin is 150～300 nanometers, and the thickness of potassium rhodanide film is 5～50 nanometers, and the thickness of aluminium film is 80～150 nanometers.
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| CN200710044502A CN101101963B (en) | 2007-08-02 | 2007-08-02 | A high status ratio inorganic film dual stabilization part and its making method |
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| CN101101963B true CN101101963B (en) | 2010-05-19 |
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| CN101290970B (en) * | 2008-06-05 | 2010-12-29 | 复旦大学 | Rewritable electrical storage with inorganic thin film and preparing method thereof |
| CN101290972B (en) * | 2008-06-05 | 2010-11-17 | 复旦大学 | Erasable and readable thin film type resistor switching device and preparing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1239329A (en) * | 1999-06-16 | 1999-12-22 | 复旦大学 | Organical electric bistable device with superhigh-speed phase change |
| CN1317836A (en) * | 2001-02-20 | 2001-10-17 | 复旦大学 | Bi-stable electric organic film with polarity memorizing effect and its application |
| CN1352470A (en) * | 2001-11-30 | 2002-06-05 | 复旦大学 | Electrically erasable molecular base organic electric bistable film device and its producing technology |
| CN1540667A (en) * | 2003-10-30 | 2004-10-27 | 复旦大学 | Electricity writing in and heat erasable organic electric bistable thin film, and applicaton |
| CN1812151A (en) * | 2005-12-08 | 2006-08-02 | 复旦大学 | Erasible electronic bistable thin-film device and preparative method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1239329A (en) * | 1999-06-16 | 1999-12-22 | 复旦大学 | Organical electric bistable device with superhigh-speed phase change |
| CN1317836A (en) * | 2001-02-20 | 2001-10-17 | 复旦大学 | Bi-stable electric organic film with polarity memorizing effect and its application |
| CN1352470A (en) * | 2001-11-30 | 2002-06-05 | 复旦大学 | Electrically erasable molecular base organic electric bistable film device and its producing technology |
| CN1540667A (en) * | 2003-10-30 | 2004-10-27 | 复旦大学 | Electricity writing in and heat erasable organic electric bistable thin film, and applicaton |
| CN1812151A (en) * | 2005-12-08 | 2006-08-02 | 复旦大学 | Erasible electronic bistable thin-film device and preparative method |
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