CN101101335A - X ray diode of nano second class resolution ratio - Google Patents
X ray diode of nano second class resolution ratio Download PDFInfo
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- CN101101335A CN101101335A CNA2007100725699A CN200710072569A CN101101335A CN 101101335 A CN101101335 A CN 101101335A CN A2007100725699 A CNA2007100725699 A CN A2007100725699A CN 200710072569 A CN200710072569 A CN 200710072569A CN 101101335 A CN101101335 A CN 101101335A
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- bias voltage
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Abstract
The invention is an X-ray diode of nanosecond-level resolution, relating to an X-ray diode, comprising anode metal net, cathode metal and bias voltage measuring circuit, where the anode metal met is in parallel with the cathode metal, the bias voltage measuring circuit is connected with the cathode metal and composed of first resistor, second resistor and capacitor, one end of the first resistor is connected with the cathode metal and one end of the capacitor, the other end of the capacitor is connected with one end of the second resistor, the other end of the second resistor is earthed, the other end of the first resistor is used as bias voltage input end and signal output end. And the invention simplifies the structure of a common X-ray diode and can operate at lower vacuum and bias voltage.
Description
Technical field
The present invention relates to a kind of x-ray diode.
Background technology
Tradition is applied to the x-ray diode that the laser target shooting x-ray laser detects, though have fast advantage time response (ps magnitude), but its complex structure, need two joints to connect anode and cathode Dc bias and oscillograph respectively, it provides the circuit of working bias voltage is a loop, and metering circuit is another loop, so X ray diode inner structure relative complex, the outside exports rare two terminals to, and the bias voltage and the vacuum tightness in when work has relatively high expectations, and is respectively 10
-3Pa, 1000～3000V.
Summary of the invention
In order to solve the baroque problem of existing x-ray diode, the invention provides a kind of x-ray diode of nano second class resolution ratio.
The present invention is made up of anode metal net, cathodic metal and bias voltage metering circuit, described anode metal net and cathodic metal opposing parallel are provided with, the bias voltage metering circuit connects cathodic metal, described bias voltage metering circuit is made up of first resistance, second resistance and electric capacity, one end of described first resistance connects an end of cathodic metal and electric capacity, the other end of electric capacity connects an end of second resistance, the other end ground connection of second resistance, the other end of first resistance is as bias voltage input end and signal output part.
The present invention has simplified the structure of common x-ray diode, and it can be worked under than low vacuum and bias voltage.
Description of drawings
Fig. 1 is a circuit diagram of the present invention.
Embodiment
Specify present embodiment below in conjunction with Fig. 1, present embodiment is by anode metal net 1, cathodic metal 2 and bias voltage metering circuit 3 are formed, described anode metal net 1 and cathodic metal 2 opposing parallel settings, bias voltage metering circuit 3 connects cathodic metal 2, described bias voltage metering circuit 3 is by first resistance R 1, second resistance R 2 and capacitor C are formed, one end of described first resistance R 1 connects an end of cathodic metal 2 and capacitor C, the other end of capacitor C connects an end of second resistance R 2, the other end ground connection of second resistance R 2, the other end of first resistance R 1 is as bias voltage input end and signal output part; Wherein cathodic metal is a gold plated copper sheets, and diameter is 10～20mm; The anode metal net is the aluminium net, and two die openings are 1～3mm, operating voltage V is-400～-600V.Described X ray diode will provide the branch road of bias voltage and the branch road of measurement to merge into one the tunnel, input and output have only a terminal, directly be connected with the gold-plated negative electrode of x-ray diode, adopt a capacitor C that is connected on the detection branch road that Dc bias and detection oscillograph are isolated, capacitor C is equivalent to open circuit to Dc bias, for pulsewidth is that the X-ray laser of several nanoseconds incides the photocurrent pulse that the metallic cathode surface of x-ray diode produces and then is equivalent to short circuit, this moment, high direct voltage only was added on the metallic cathode of x-ray diode, and photocurrent all flows into and surveys branch road and surveyed by oscillograph.This x-ray diode simple in structure, volume is little, operability height simultaneously.
X ray passes anode network and beats produce photoelectron on negative electrode, and photoelectron is the anode motion under highfield effect between anode and cathode, and the run duration of electronics from the negative electrode to the anode is referred to as transit time (τ
x), when Anode-cathode Distance was h, bias voltage was V, electron mass is m
eThe time:
And τ
x 2=2h
2m
e/ eV (1)
By formula (1) as can be seen, the rising edge response time τ of x-ray diode
xWith V
-0.5Be inversely proportional to, reduce the anode and cathode bias voltage and can make the rising edge response time elongated, can reduce x-ray diode to vacuum requirements, provide convenience for carrying out Laser Experiments but reduce bias voltage.The bias voltage of employing-600V and the cathode and anode spacing of 2mm, then τ
x=0.275ns.According to rising edge response time t
xDefinition, calculate 90% peak value from 10% time to peak of pulse front edge and be the pulse front edge response time constantly, the photoelectronic transit time is the leading edge time of x-ray diode output pulse, so rising edge response time t
x≈ 0.8 τ
x, t then
x=0.22ns.0.22ns response time not can to tens nanosecond discharge mechanism the X-ray energy measurement exert an influence, the bias voltage of-600V and the cathode and anode spacing of 2mm but greatly reduce vacuum requirements, vacuum tightness reduces to 1 * 10
-1Pa.
Claims (1)
1, a kind of x-ray diode of nano second class resolution ratio, it is characterized in that it is by anode metal net (1), cathodic metal (2) and bias voltage metering circuit (3) are formed, described anode metal net (1) and cathodic metal (2) opposing parallel setting, bias voltage metering circuit (3) connects cathodic metal (2), described bias voltage metering circuit (3) is by first resistance (R1), second resistance (R2) and electric capacity (C) are formed, one end of described first resistance (R1) connects an end of cathodic metal (2) and electric capacity (C), the other end of electric capacity (C) connects an end of second resistance (R2), the other end ground connection of second resistance (R2), the other end of first resistance (R1) is as bias voltage input end and signal output part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100725699A CN100498379C (en) | 2007-07-25 | 2007-07-25 | X ray diode of nano second class resolution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100725699A CN100498379C (en) | 2007-07-25 | 2007-07-25 | X ray diode of nano second class resolution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101101335A true CN101101335A (en) | 2008-01-09 |
| CN100498379C CN100498379C (en) | 2009-06-10 |
Family
ID=39035703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100725699A Expired - Fee Related CN100498379C (en) | 2007-07-25 | 2007-07-25 | X ray diode of nano second class resolution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100498379C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220656A (en) * | 2020-01-21 | 2020-06-02 | 中国工程物理研究院流体物理研究所 | Device and method for detecting cathode pollution degree of X-ray diode |
| CN113433579A (en) * | 2021-05-18 | 2021-09-24 | 中国工程物理研究院激光聚变研究中心 | Large-sensitive-surface X-ray spectrum flat response diode detector |
-
2007
- 2007-07-25 CN CNB2007100725699A patent/CN100498379C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220656A (en) * | 2020-01-21 | 2020-06-02 | 中国工程物理研究院流体物理研究所 | Device and method for detecting cathode pollution degree of X-ray diode |
| CN111220656B (en) * | 2020-01-21 | 2022-05-17 | 中国工程物理研究院流体物理研究所 | Device and method for detecting cathode pollution degree of X-ray diode |
| CN113433579A (en) * | 2021-05-18 | 2021-09-24 | 中国工程物理研究院激光聚变研究中心 | Large-sensitive-surface X-ray spectrum flat response diode detector |
| CN113433579B (en) * | 2021-05-18 | 2023-01-20 | 中国工程物理研究院激光聚变研究中心 | Large-sensitive-surface X-ray spectrum flat response diode detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100498379C (en) | 2009-06-10 |
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Granted publication date: 20090610 Termination date: 20100725 |