CN101098569B - 半导体传声器芯片 - Google Patents
半导体传声器芯片 Download PDFInfo
- Publication number
- CN101098569B CN101098569B CN2006100894565A CN200610089456A CN101098569B CN 101098569 B CN101098569 B CN 101098569B CN 2006100894565 A CN2006100894565 A CN 2006100894565A CN 200610089456 A CN200610089456 A CN 200610089456A CN 101098569 B CN101098569 B CN 101098569B
- Authority
- CN
- China
- Prior art keywords
- backplane
- vibrating diaphragm
- nick
- microphone chip
- membrane electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 239000012528 membrane Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 5
- 239000003990 capacitor Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 2
- 238000010923 batch production Methods 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 230000003578 releasing effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 206010042209 Stress Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006100894565A CN101098569B (zh) | 2006-06-28 | 2006-06-28 | 半导体传声器芯片 |
KR1020060077597A KR101204281B1 (ko) | 2006-06-28 | 2006-08-17 | 반도체 마이크로폰 칩 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006100894565A CN101098569B (zh) | 2006-06-28 | 2006-06-28 | 半导体传声器芯片 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101098569A CN101098569A (zh) | 2008-01-02 |
CN101098569B true CN101098569B (zh) | 2011-06-29 |
Family
ID=39012003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100894565A Active CN101098569B (zh) | 2006-06-28 | 2006-06-28 | 半导体传声器芯片 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101204281B1 (zh) |
CN (1) | CN101098569B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2345259B1 (en) | 2008-10-10 | 2021-03-17 | Knowles IPC (M) Sdn. Bhd. | Acoustic valve mechanisms |
CN101453683A (zh) * | 2008-12-26 | 2009-06-10 | 瑞声声学科技(深圳)有限公司 | 硅电容式麦克风 |
CN101568054B (zh) * | 2009-04-03 | 2012-08-29 | 瑞声声学科技(深圳)有限公司 | 硅基电容麦克风 |
CN102014332A (zh) * | 2010-04-12 | 2011-04-13 | 瑞声声学科技(深圳)有限公司 | 电容mems麦克风 |
CN102457800A (zh) * | 2010-10-21 | 2012-05-16 | 北京卓锐微技术有限公司 | 无背极板的mems电容式麦克风及其制备方法 |
CN104053082B (zh) * | 2013-03-14 | 2017-12-19 | 台湾积体电路制造股份有限公司 | 集成麦克风的结构和方法 |
US9264833B2 (en) | 2013-03-14 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for integrated microphone |
KR101472297B1 (ko) * | 2013-05-22 | 2014-12-12 | 한국기계연구원 | 1칩형 mems 마이크로폰 및 그 제작 방법 |
CN105246012A (zh) * | 2014-05-30 | 2016-01-13 | 无锡华润上华半导体有限公司 | Mems麦克风 |
KR102198700B1 (ko) * | 2014-10-31 | 2021-01-05 | 서울시립대학교 산학협력단 | 박막 스피커 |
KR102181387B1 (ko) * | 2014-11-04 | 2020-11-20 | 서울시립대학교 산학협력단 | 마이크로폰 |
KR102209439B1 (ko) * | 2014-11-27 | 2021-01-28 | 서울시립대학교 산학협력단 | 평판 스피커 |
CN106060722A (zh) * | 2016-07-25 | 2016-10-26 | 北京塞宾科技有限公司 | 石墨烯振膜、振膜制作方法及包括该振膜的传声器 |
CN106131756A (zh) * | 2016-07-25 | 2016-11-16 | 北京塞宾科技有限公司 | 一种石墨烯振膜、振膜制作方法及包括该振膜的传声器 |
CN106131755A (zh) * | 2016-07-25 | 2016-11-16 | 北京塞宾科技有限公司 | 具有石墨烯振膜的传声器 |
DE202018107148U1 (de) | 2017-12-29 | 2019-01-15 | Knowles Electronics, Llc | Audiovorrichtung mit akustischem Ventil |
DE202018107151U1 (de) | 2018-01-08 | 2019-01-15 | Knowles Electronics, Llc | Audiovorrichtung mit Ventilzustandsverwaltung |
US10932069B2 (en) | 2018-04-12 | 2021-02-23 | Knowles Electronics, Llc | Acoustic valve for hearing device |
US11102576B2 (en) | 2018-12-31 | 2021-08-24 | Knowles Electronicis, LLC | Audio device with audio signal processing based on acoustic valve state |
US10917731B2 (en) | 2018-12-31 | 2021-02-09 | Knowles Electronics, Llc | Acoustic valve for hearing device |
US11432066B2 (en) * | 2019-02-14 | 2022-08-30 | Dean Robert Gary Anderson | Audio systems, devices, MEMS microphones, and methods thereof |
CN112235697B (zh) * | 2020-10-13 | 2022-01-14 | 歌尔微电子有限公司 | 敏感膜、mems麦克风及其制作方法 |
CN112584282B (zh) * | 2020-11-30 | 2022-07-08 | 瑞声新能源发展(常州)有限公司科教城分公司 | 硅麦克风及其加工方法 |
CN112601169B (zh) * | 2020-12-15 | 2021-09-24 | 武汉大学 | 一种宽频带高灵敏度谐振式压电mems麦克风 |
US11558690B2 (en) | 2021-01-14 | 2023-01-17 | Dean Robert Gary Anderson | Audio systems, devices, and methods |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2666074Y (zh) * | 2003-12-23 | 2004-12-22 | 中国科学院声学研究所 | 一种具有高灵敏度的用于硅微电容传声器的芯片 |
EP1108203B1 (de) * | 1998-08-27 | 2005-03-16 | Infineon Technologies AG | Vor umwelteinflüssen geschütztes mikromechanisches bauelement |
CN2783675Y (zh) * | 2004-12-13 | 2006-05-24 | 中国科学院声学研究所 | 一种硅微电容传声器芯片 |
CN2927580Y (zh) * | 2006-06-28 | 2007-07-25 | 潍坊歌尔电子有限公司 | 半导体传声器芯片 |
-
2006
- 2006-06-28 CN CN2006100894565A patent/CN101098569B/zh active Active
- 2006-08-17 KR KR1020060077597A patent/KR101204281B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1108203B1 (de) * | 1998-08-27 | 2005-03-16 | Infineon Technologies AG | Vor umwelteinflüssen geschütztes mikromechanisches bauelement |
CN2666074Y (zh) * | 2003-12-23 | 2004-12-22 | 中国科学院声学研究所 | 一种具有高灵敏度的用于硅微电容传声器的芯片 |
CN2783675Y (zh) * | 2004-12-13 | 2006-05-24 | 中国科学院声学研究所 | 一种硅微电容传声器芯片 |
CN2927580Y (zh) * | 2006-06-28 | 2007-07-25 | 潍坊歌尔电子有限公司 | 半导体传声器芯片 |
Also Published As
Publication number | Publication date |
---|---|
KR101204281B1 (ko) | 2012-11-23 |
CN101098569A (zh) | 2008-01-02 |
KR20080001568A (ko) | 2008-01-03 |
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Legal Events
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C06 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071123 Address after: No. 268 Dongfang Road, hi tech Industrial Development Zone, Shandong, Weifang Applicant after: GOERTEK Inc. Address before: Hi Tech Pioneer Park, north section, Dongfang Road, Weifang, Shandong Applicant before: Weifang Goertek Electronics Co.,Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: GOERTEK Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200615 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |