CN101097991A - Dual-operation mode organic field effect transistors and manufacturing method thereof - Google Patents
Dual-operation mode organic field effect transistors and manufacturing method thereof Download PDFInfo
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- CN101097991A CN101097991A CNA2006100894550A CN200610089455A CN101097991A CN 101097991 A CN101097991 A CN 101097991A CN A2006100894550 A CNA2006100894550 A CN A2006100894550A CN 200610089455 A CN200610089455 A CN 200610089455A CN 101097991 A CN101097991 A CN 101097991A
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Abstract
The invention relates to an organic field-effect transistor technical field, in particular to dual-mode organic field-effect transistor and a relative production. The invention comprises a substrate, a grid electrode, an insulation layer, an insertion semi-conductor layer, a main semi-conductor layer, a source electrode and a drain electrode. The method production comprises that deposing the grid metal, the insulation layer, the insertion semi-conductor layer, and the organic main semi-conductor material, and testing device. The invention can control the thickness of the insertion semi-conductor to control the property of conductive groove, and realize the synchronous operation of depletion type and strengthen type of one organic field-effect transistor. Compared with other method, the invention can use same art to prepare the organic field-effect transistor with controllable doping semi-conductor groove. The invention can form depletion or dual-mode field-effect transistor in homojunction or heterojunction. The invention can be used for the controllable preparation of organic field-effect transistor, organic semi-conductor logic gate and integrated circuit.
Description
Technical field
The present invention relates to the organic field effect tube technical field, be particularly related to a kind of organic field effect tube of double working modes, be a kind of collect enhancement mode and depletion type mode of operation be one organic field effect tube with a kind of by two-layer or two-layer above different semiconductors (wherein having a kind of organic semiconductor at least) as raceway groove to form the organic field effect tube of heterojunction or homojunction.
Background technology
Since Tsumura et al. (Tsumura, A.; Koezuka, H.; Ando, T.Appl.Phys.Lett.1986,49,1210) since the report about organic field effect tube, organic field effect tube since its in Active Matrix LCD At, the organic integration circuit, the potential using value of aspects such as electronic trademark has obtained people's extensive concern.Compare with inorganic transistors, organic field effect tube has low cost, and is in light weight, and pliability is good, is easy to characteristics such as mass preparation.In recent years, organic field effect tube has been obtained significant progress, and the trial that is applied to integrated circuit has been arranged.Wherein the field-effect transistor mobility based on pentacene has surpassed 1.5cm
2V
-1s
-1(Nelson, S.F.; Lin, Y.Y.; Gundlach, D.J.; Jackson, T.N.Appl.Phys.Lett.1998,72,1854), can compare favourably with amorphous silicon.Based on the single-crystal field effect transistor mobility of rubrene up to 15cm
2V
-1s
-1(Sundar, V.C.; Zaumseil, J.; Podzorov, V.; Menard, E.; Willett, R.L.; Someya, T.; Gershenson, M.E.; Rogers, J.A.Science 2004,303, and 1644).
Organic field effect tube is used to construct logical device and integrated circuit is the final purpose that organic electronic is learned.At present, people realize this purpose by several different methods, and the current basic theories of most importantly using for reference the inorganic semiconductor device physics adopts a p transistor npn npn and a n transistor npn npn, perhaps adopt a pair of bipolarity field-effect transistor to construct gate (Anthonopoulos, T.D.; De Leeuw, D.M.; Cantatore, E.; Setayesh, S.; Meijer, E.J.; Tanase, C.; Hummelen, J.C.; Blom, P.W.M.Appl.Phys.Lett.2004,85,4205).But, up to now, the stable n-type organic semiconducting materials of high mobility is very few, scientist is through for many years trial, n section bar material commonly used now only limits to a few compounds such as fluorine phthalocyanines ， perylene diimide class, and the mobility of n type field-effect transistor often is lower than p type mobility, for the bipolarity organic field effect tube, there is the unmatched problem of mobility equally.This has just caused huge obstacle to constructing the organic effect logical circuit.On the one hand, lack the material of high mobility, on the other hand, the mobility of constructing two individual devices of gate does not match, and the performance of organic logical device has been subjected to restriction.According to the inorganic semiconductor theory, one co-exists in four kinds of fieldtrons (p type enhancement mode, p type depletion type, n type enhancement mode and n type depletion type), may be used to construct logical device (Sze, SMPhysics of Semiconductor Device.2nd.ed.New York:Wiley, 1981).Logical device constructed dual mode, with modal not gate is example, can use based on two field-effect transistors of the mode of operation of the same race (enhancement mode or depletion type) of different classes of semi-conducting material (p type and n type) and construct, also can use based on two field-effect transistors of the mode of operation different of the same race (enhancement mode and depletion type) of identical category semi-conducting material (p type or n type) and construct (C.Carruthers and J.Mavor, IEE Proc.Circ.Dev.Syst.1992,139,377, S.Nuttinck; A.J.Scholten; L.F.Tiemeijer; F.Cubaynes; C.Dachs; C.Detcheverry; E.A.Hijzen, IEEETrans.Electron.Dev.2006,53,153).But, the organic field effect tube of report generally all is an enhancement mode now, the organic effect device that the report depletion type is seldom arranged, this mainly is because organic semiconductor device often all is based on highly purified organic compound preparation, the general means such as doping in the inorganic semiconductor technology and diffusion that do not adopt, resulting device does not generally present the depletion type mode of operation.Yet early stage studies show that, also can there be the mode of operation (H.Klauk of depletion type in organic field effect tube, D.J.Gundlach, M.Bonse, C.C.Kuo, and T.N.Jackson, Appl.Phys.Lett.2000,76,1692), but these experimental phenomenas all are (to mix as oxygen) because unexpected doping or failure that device is constructed causes, often all be that the researcher does not wish the result that obtains, do not have to such an extent that be researcher's attention.In addition, the conscious people of organic semi-conductor there is extensive studies for being entrained in the Organic Light Emitting Diode, but for the organic effect device, general in order to improve the mobility of device, the purity of active layer semi-conducting material of wishing raceway groove is high more good more, and semi-conductive conscious artificial doping seldom obtains research to organic effect.
Summary of the invention
For the mobility that solves n type field-effect transistor often is lower than p type mobility,, there is the unmatched problem of mobility equally for the bipolarity organic field effect tube; Organic field effect tube does not present the problem of depletion type mode of operation, the objective of the invention is to be to provide a kind of novel method and the device architecture controllable doped to organic semi-conductor.
Another object of the present invention is to the depletion type mode of operation that this structure can realize the organic effect device, realize organic field effect tube realization double working modes simultaneously.
To achieve these goals, a first aspect of the present invention provides a kind of dual-operation mode organic field effect transistors, comprises substrate, gate electrode, insulating barrier, insertion semiconductor layer, bulk semiconductor layer and source electrode and drain electrode, wherein:
Substrate, intercalation electrode lead-in wire on substrate;
Gate electrode, this gate electrode is produced on the one side of substrate, promptly deposits and pattern gate electrode gate electrode and contact conductor conducting on substrate;
Insulating barrier, this insulating barrier is produced on the another side of gate electrode;
Insert semiconductor layer, this insertion semiconductor layer is produced on the another side of insulating barrier;
The bulk semiconductor layer, this bulk semiconductor layer is produced on the another side of semiconductor layer;
Drain electrode and source electrode, drain electrode and source electrode are produced on the another side of bulk semiconductor layer.
Described insertion semiconductor layer and bulk semiconductor layer, both structures of relative position exchange are as follows:
Insulating barrier, this insulating barrier is produced on the another side of gate electrode;
The bulk semiconductor layer, this bulk semiconductor layer is produced on the another side of insulating barrier;
Insert semiconductor layer, this insertion semiconductor layer is produced on the another side of bulk semiconductor layer;
Drain electrode and source electrode, drain electrode and source electrode are produced on the another side that inserts semiconductor layer.
A second aspect of the present invention provides a kind of preparation method of dual-operation mode organic field effect transistors, may further comprise the steps:
The first step, the deposition of gate metal:
With the substrate of ethanol, acetone ultrasonic cleaning, deionized water rinsing, through nitrogen dry up with oven for drying after deposit layer of metal at least, obtain gate electrode;
Second step, the deposition of insulating barrier:
On gate electrode, adopt the insulating barrier thin film-forming method to deposit one deck insulating barrier at least;
In the 3rd step, insert the deposition of semiconductor layer and the deposition of organic main body semi-conducting material:
Depositing on the substrate of insulating barrier, the insertion semiconductor layer of deposition one deck 0.5～50 nanometer adopts the organic substance film build method to obtain the main body organic semiconductor layer that thickness is 20～200 nanometers then; Perhaps adopt the organic substance film build method to obtain the main body organic semiconductor layer that thickness is 20～200 nanometers earlier, deposit the insertion semiconductor layer of one deck 0.5～50 nanometer again;
The 4th step, device detection:
With the bimodulus field-effect transistor for preparing, after under atmospheric environment, testing under the room temperature, get finished product.
The present invention has and has following characteristics and advantage:
1: the organic field effect tube of the present invention's preparation can be controlled the character of conducting channel by the thickness of control insertion semiconductor layer, can realize the depletion type and the double mode operation simultaneously of enhancement mode of same organic field effect tube.
2: method disclosed by the invention, compare with other method, can utilize same prepared to obtain the organic field effect tube of controllable doped semiconductor channel.
3: method disclosed by the invention, semiconductor channel comprise two-layer at least, can change the composition that inserts semiconductor layer and organic main body semiconductor layer arbitrarily, are easy to prepare construct depletion type or the double mode field-effect transistor that is made of homojunction or heterojunction.In the controlled preparation of organic effect transistor and organic semiconductor gate and integrated circuit, using value is arranged.
Description of drawings
Fig. 1 is the organic material molecular formula of field-effect transistor of the present invention
Fig. 2 a and Fig. 2 b are the structural representation of the double mode organic field effect tube of the present invention
Fig. 3 is the curve of output of organic field effect tube that the present invention is based on the double working modes of TCNQ and CuPc
Fig. 4 is the transfer curve figure of organic field effect tube that the present invention is based on the double working modes of TCNQ and CuPc
Fig. 5 is the curve of output of organic field effect tube that the present invention is based on the double working modes of DBTTF and CuPc
Fig. 6 is the transfer curve figure of organic field effect tube that the present invention is based on the double working modes of DBTTF and CuPc
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail, be to be noted that described embodiment only is intended to be convenient to the understanding of the present invention, and it is not played any qualification effect.
As Fig. 2 a is the structural representation of the double mode organic field effect tube of the present invention: be followed successively by gate electrode 1, insulating barrier 2 from the bottom up, insert semiconductor layer 3, bulk semiconductor layer 4, source electrode 5 and drain electrode 6.
As Fig. 2 b is the structural representation of the double mode organic field effect tube of the present invention: be followed successively by gate electrode 1, insulating barrier 2, bulk semiconductor layer 4 from the bottom up, insert semiconductor layer 3, source electrode 5 and drain electrode 6.
Technical scheme of the present invention is to increase a raceway groove and be called the insertion semiconductor layer extra between insulating barrier 2 and the main body organic semiconductor layer 4 or between source electrode 5, drain electrode 6 and the bulk semiconductor layer 4, as the source layer that mixes.The structure of this device comprises substrate, gate electrode 1, insulating barrier 2, inserts semiconductor layer 3, bulk semiconductor layer 4, source electrode 5 and drain electrode 6; It is constructed insulating barrier 2 in turn, inserts semiconductor layer 3, bulk semiconductor layer 4, source electrode 5 and drain electrode 6 after deposition and pattern gate electrode 1 on the substrate.The relative position that wherein inserts semiconductor layer 3 and bulk semiconductor layer 4 can exchange.
Its described substrate is that one of them is made by glass, pottery, polymer, silicon chip.
Its described gate electrode 1, source electrode 5 and drain electrode 6, be to constitute by having low-resistance material, comprise various metals and alloy materials such as gold, silver, aluminium, copper, metal oxide (as tin indium oxide) electric conducting material and conducing composite material (as gold size, elargol, carbon paste etc.), deposition process can be various deposition processs such as the chemical vapour deposition (CVD) that strengthens of vacuum thermal evaporation, magnetron sputtering, plasma, silk screen printing, coating.
Its described insulating barrier 2 materials have excellent dielectric properties, comprise inorganic insulating material such as silicon dioxide, silicon nitride, titanium dioxide, tantalum pentoxide, organic insulating material such as polymethyl methacrylate etc., polyvinyl alcohol etc., the preparation method can be the chemical vapour deposition (CVD), the thermal oxidation that strengthen of plasma, get rid of film or vacuum evaporation etc.
Described insertion semiconductor layer 3 is between insulating barrier 2 and the main body organic semiconductor layer 4 or the insertion semiconductor layer 3 between source electrode 5/ drain electrode 6 and the bulk semiconductor layer 4, makes the source layer that mixes.
Described insertion semiconductor layer 4, inserting semiconductor layer 3 is to have the material of accepting or providing electronic capability, comprises that inorganic body and acceptor material, dye molecule, the organic molecule given give body and acceptor material and their derivative or their mixture for body and acceptor material, macromolecule.
Described insertion semiconductor layer 3, the film forming of inserting semiconductor layer 3 adopts vacuum evaporation, gets rid of film, drips film, the printing thin film-forming method, makes by dipole effect, diffusion or electric charge transferance organic semiconductor layer to be realized mixing between the insertion semiconductor layer 3 of organic active and the insulating barrier 2.
Described insertion semiconductor layer 3, adopt timeliness, load electric field or heat treatment method, adopt described one or more method, the control organic semi-conductor mixes, make and insert 4 doping of 3 pairs of bulk semiconductor layers of semiconductor layer, present the dual-operation mode organic field effect transistors of operating characteristic under the mode of operation of enhancement mode and depletion type simultaneously.
Described main body organic semiconductor 4 adopts the organic material with field effect behavior, comprises organic small molecule material, macromolecule polymer material or their mixtures,
Described main body organic semiconductor layer 4 adopts vacuum evaporation, gets rid of film, drips film, prints thin film-forming method.
Described main body organic semiconductor layer 4 adopts individual layer or bilayer, adopts a kind of material or composite material.
The film build method of its described insertion semiconductor layer 3 and bulk semiconductor layer 4, for vacuum evaporation, get rid of film, drip film, printing; When organic substance is polymer, adopts and get rid of film, drip film, printing; During for micromolecule, adopt vacuum evaporation, get rid of film, drip film, impression, printing.
Described dual-operation mode organic field effect transistors is formed the organic semiconductor raceway groove by inserting semiconductor layer and organic main body semiconductor layer, and the organic semiconductor raceway groove has two kinds of structures, and a kind of is the insertion semiconductor layer below being, is the organic main body semiconductor layer above; Another kind be a kind of be the organic main body semiconductor layer below being, be to insert semiconductor layer above.
Its described drain electrode 6 and source electrode 5 metal layer thickness are 30 nanometers～300 nanometers.Can select 30 nanometers or 100 nanometers or 200 nanometers or 300 nanometers as required
0.2 micron～150 microns of its described channel lengths.Can select 0.2 micron or 50 microns or 100 microns or 150 microns as required.
Organic field effect tube of the present invention is at same device, can work under depletion-mode and enhancement mode simultaneously:
So-called enhancement mode is meant: work as V
GS=0 o'clock pipe is to be cut-off state, adds correct V
GSAfter, majority carrier attracted to grid, thereby " enhancing " charge carrier that should the zone, form conducting channel.
Depletion-mode then is meant, works as V
GSPromptly form raceway groove at=0 o'clock, and added correct V
GSThe time, can make majority carrier flow out raceway groove, thereby " exhaust " charge carrier, pipe is turned to end.This structure of the present invention can realize that organic field effect tube is from the transformation of enhancement mode to depletion-mode and double working modes.
Embodiment 1:
Shown in Figure 1 is the molecular formula that is used to prepare organic material of the present invention, is CuPc CuPc (1) diphenyl tetrathiafulvalene DBTTF (2) and four cyano xyloquinone TCNQ (3).
Shown in Fig. 2 a and Fig. 2 b is the structural representation of non-double working modes field-effect transistor of the present invention; Wherein:
Shown in Fig. 2 a: the bottom is a gate electrode 1, and its top is an insulating barrier 2, is respectively to insert semiconductor layer 3 and main body organic semiconductor layer 4 then;
Perhaps shown in Fig. 2 b: the bottom is a gate electrode 1, and its top is an insulating barrier 2, is that deposition main body organic semiconductor layer 4 inserts semiconductor layer 3 with deposition earlier then.
It is 50 microns to channel length L for example below, source electrode 5, drain electrode 5 are gold electrode, the preparation of inserting organic field effect tube Fig. 2 a of semiconductor layer 3 and CuPc (CuPc) main body organic semiconductor layer 4 based on four cyano xyloquinone (TCNQ) is illustrated, but the present invention is not limited thereto.
The preparation method of dual-operation mode organic field effect transistors of the present invention comprises that following concrete step is as follows:
The first step, the preparation of gate electrode 1
After polycrystalline silicon substrate is ultrasonic through ethanol, acetone, deionized water rinsing, nitrogen dried up, oven dry realized heavily doped to form the gate electrode of conduction to substrate with diffusion technology then;
Second step, the deposition of insulating barrier 2
Silicon substrate is placed in the chemical gas-phase deposition system of plasma enhancing, deposition of silica, thickness are 450 nanometers.
The 3rd step, the deposition of insertion semiconductor layer 3
In vacuum degree is 4 * 10
-4With the speed evaporation TCNQ of 2 /s, thickness is 5 nanometers, or selects 0.5 nanometer as required, or 20 nanometers, or 30 nanometers, or 50 nanometers under the condition of Pa.
The 4th step, the deposition of bulk semiconductor layer 4
In vacuum degree is 4 * 10
-4With the speed evaporation CuPc of 2 /s, thickness is 50 nanometers, or selects 20 nanometers as required, or 100 nanometers, or 200 nanometers under the condition of Pa.
The 5th step, the preparation of source electrode 5, drain electrode 6
In vacuum degree is 1 * 10
-3Speed with 5 /s under the condition of Pa is passed through the template gold evaporation, and thickness is 50 nanometers, obtains having the gold electrode of interdigital structure.
The 6th step, test
Utilize the HP4140B semi-conductor test instrument that device performance is tested.
Fig. 3 a-Fig. 3 d is that channel length of the present invention is 50 microns, and source electrode 5, drain electrode 6 are the curve of output of the dual-operation mode organic field effect transistors of gold electrode, and wherein, Fig. 3 a is the curve of output that the test at once of device preparation back obtains; Fig. 3 b waits for the curve of output of the depletion type mode of operation that measures after 1 hour for after device is once tested; Fig. 3 c is for to behind the device detection six times (time interval of each test all is 1 hour), the curve of output of the enhancement mode mode of operation that device presents; Fig. 3 d is for to behind the device detection six times (time interval of each test all is 1 hour), the curve of output of the depletion type mode of operation that device presents.
Fig. 4 is 50 microns for raceway groove L length of the present invention, and source electrode 5, drain electrode 6 are the transfer curve of the dual-operation mode organic field effect transistors of gold electrode.From transfer curve, can find out clearly that device is from the transformation of original enhancement mode to double working modes, (the direction shown in arrow among the figure of variation clocklike that presents along with the variation of number of operations of device particularly, the curve of six groups of circulations corresponds respectively to every interval and tests the transfer curve that obtains after 1 hour from the bottom up).After 1 hour 6 circulations of operation in each interval, the mobility of device is from 3.9 * 10
-4Cm
2/ Vs monotone increasing is added to 4.6 * 10
-4Cm
2/ Vs, threshold voltage is increased to+56V gradually from+20V.
Embodiment 2:
Press the preparation of embodiment 1, unique different be the TCNQ layer to be replaced to DBTTF be deposited between CuPc and the insulating barrier 2, the device of this structure also presents the double working modes characteristic.
Fig. 5 a-figure d is that channel length of the present invention is 50 microns, and source electrode 5, drain electrode 6 are the curve of output of the dual-operation mode organic field effect transistors of gold electrode, and wherein, Fig. 3 a is the curve of output that the test at once of device preparation back obtains; Fig. 3 b is after device is once tested, the curve of output of the depletion type mode of operation that measures; Fig. 3 c is to behind the device detection six times (time interval of each test is all very short, can think follow-on test), the operating characteristic of the enhancement mode that device presents; Fig. 3 d is to behind the device follow-on test six times, the operating characteristic of the depletion type that device presents.
Fig. 6 is 50 microns for channel length of the present invention, and source electrode 5, drain electrode 6 are the transfer curve of the dual-operation mode organic field effect transistors of gold electrode.From transfer curve, can find out clearly that device is from the transformation of original enhancement mode to double working modes, (the direction shown in arrow among the figure of variation clocklike that presents along with the variation of number of operations of device particularly, the curve of six groups of circulations corresponds respectively to the transfer curve that different number of times tests obtain from the bottom up).Through after 6 continuous cyclings, the mobility of device is from 1.6 * 10
-4Cm
2/ Vs is increased to 6.0 * 10 gradually
-4Cm
2/ Vs, threshold voltage is increased to+48V from-5V.With embodiment 1 different be that the device of the present invention's preparation be as long as can realize double mode operating characteristic by continuous rather than free at interval cycling, and the mobility of device and variations in threshold voltage are more remarkable.
Embodiment 3:
Press the preparation of embodiment 1, unique different be that main body organic semiconductor layer 4 is phthalocyanine nickel (NiPc), with TCNQ be to insert the organic field effect tube that semiconductor layer 3 has prepared double working modes, be that the mobility that source electrode 5 records device is 1.3 * 10 with the gold electrode
-4Cm
2V
-1s
-1, circulating rises to 1.8 * 10 after six times
-4Cm
2V
-1s
-1, rise to+45V from initial+18V after the threshold voltage circulation 6 times.
Embodiment 4:
Press the preparation of embodiment 1, unique different be that the thickness that inserts semiconductor layer 3TCNQ is 10 nanometers, be that the mobility that source electrode 5 records device is 2.4 * 10 with the gold electrode
-4Cm
2V
-1s
-1, circulating rises to 3.2 * 10 after six times
-4Cm
2V
-1s
-1, rise to+68V from initial+34V after the threshold voltage circulation 6 times.
Embodiment 5:
Press the preparation of embodiment 1, unique difference will be inserted the location swap of semiconductor layer 3DBTTF and bulk semiconductor layer 4CuPc, and promptly DBTTF inserts top Fig. 2 b that semiconductor layer 3 is positioned at bulk semiconductor layer 4.Be that the mobility that source electrode 5 records device is 3.6 * 10 with the gold electrode
-4Cm
2V
-1s
-1, circulating rises to 5.2 * 10 after six times
-4Cm
2V
-1s
-1, rise to+43V from initial+5V after the threshold voltage circulation 6 times.
Describing above is to be used to realize the present invention and embodiment, and those of ordinary skills can determine multiple implementation according to actual conditions, and therefore, scope of the present invention should not described by this and limit.It should be appreciated by those skilled in the art,, all belong to claim of the present invention and come restricted portion in any modification or partial replacement that does not depart from the scope of the present invention.
Claims (13)
1, a kind of dual-operation mode organic field effect transistors is characterized in that: structure wherein:
Substrate, intercalation electrode lead-in wire on substrate;
Gate electrode, this gate electrode is produced on the one side of substrate, promptly deposits and pattern gate electrode gate electrode and contact conductor conducting on substrate;
Insulating barrier, this insulating barrier is produced on the another side of gate electrode;
Insert semiconductor layer, this insertion semiconductor layer is produced on the another side of insulating barrier;
The bulk semiconductor layer, this bulk semiconductor layer is produced on the another side of semiconductor layer;
Drain electrode and source electrode, drain electrode and source electrode are produced on the another side of bulk semiconductor layer.
2, dual-operation mode organic field effect transistors according to claim 1 is characterized in that: described insertion semiconductor layer and bulk semiconductor layer, both structures of relative position exchange are as follows:
Insulating barrier, this insulating barrier is produced on the another side of gate electrode;
The bulk semiconductor layer, this bulk semiconductor layer is produced on the another side of insulating barrier;
Insert semiconductor layer, this insertion semiconductor layer is produced on the another side of bulk semiconductor layer;
Drain electrode and source electrode, drain electrode and source electrode are produced on the another side that inserts semiconductor layer.
3, according to claim 1 and 2 described dual-operation mode organic field effect transistors, it is characterized in that: described insertion semiconductor layer, be between insulating barrier and the main body organic semiconductor layer or the insertion semiconductor layer between source-drain electrode and the bulk semiconductor layer, make the source layer that mixes.
4, according to claim 1 and 2 described dual-operation mode organic field effect transistors, it is characterized in that: described insertion semiconductor layer, inserting semiconductor layer is to have the material of accepting or providing electronic capability, comprises that inorganic body and acceptor material, dye molecule, the organic molecule given give body and acceptor material and their derivative or their mixture for body and acceptor material, macromolecule.
5, according to claim 1 and 2 described dual-operation mode organic field effect transistors, it is characterized in that: described insertion semiconductor layer, the film forming of inserting semiconductor layer adopts vacuum evaporation, gets rid of film, drips film, the printing thin film-forming method, makes by dipole effect, diffusion or electric charge transferance organic semiconductor layer to be realized mixing between the semiconductor layer of organic active and the insulating barrier.
6, according to claim 1 and 2 described dual-operation mode organic field effect transistors, it is characterized in that: described main body organic semiconductor, employing has the organic material of field effect behavior, comprises organic small molecule material, macromolecule polymer material or their mixtures.
7, according to claim 1 and 2 described dual-operation mode organic field effect transistors, it is characterized in that: described main body organic semiconductor, adopt vacuum evaporation, get rid of film, drip film, print thin film-forming method.
8, according to claim 1 and 2 described dual-operation mode organic field effect transistors, it is characterized in that: described main body organic semiconductor layer adopts individual layer or bilayer, adopts a kind of material or composite material.
9, a kind of preparation method of dual-operation mode organic field effect transistors is characterized in that, may further comprise the steps:
The first step, the deposition of gate metal:
With the substrate of ethanol, acetone ultrasonic cleaning, deionized water rinsing, through nitrogen dry up with oven for drying after deposit layer of metal at least, obtain gate electrode;
Second step, the deposition of insulating barrier:
On gate electrode, adopt the insulating barrier thin film-forming method to deposit one deck insulating barrier at least;
In the 3rd step, insert the deposition of semiconductor layer and the deposition of organic main body semi-conducting material:
Depositing on the substrate of insulating barrier, the insertion semiconductor layer of deposition one deck 0.5～50 nanometer adopts the organic substance film build method to obtain the main body organic semiconductor layer that thickness is 20～200 nanometers then; Perhaps adopt the organic substance film build method to obtain the main body organic semiconductor layer that thickness is 20～200 nanometers earlier, deposit the insertion semiconductor layer of one deck 0.5～50 nanometer again;
The 4th step, device detection:
With the bimodulus field-effect transistor for preparing, after under atmospheric environment, testing under the room temperature, get finished product.
10, according to the preparation method of the described dual-operation mode organic field effect transistors of claim 9, it is characterized in that, described insertion semiconductor layer, adopt timeliness, load electric field or heat treatment method, adopt described one or more method, the control organic semi-conductor mixes, and makes to insert semiconductor layer to the doping of bulk semiconductor layer, presents the dual-operation mode organic field effect transistors of operating characteristic under the mode of operation of enhancement mode and depletion type simultaneously.
According to the preparation method of claim 1 and 9 described dual-operation mode organic field effect transistors, it is characterized in that 11, the thickness of its described drain electrode and source metal layer of electrodes is 30～300 nanometers.
12, according to the preparation method of claim 1 and 9 described dual-operation mode organic field effect transistors, it is characterized in that: 0.2～150 micron of its described channel length.
13, according to the described dual-operation mode organic field effect transistors of claim 1, it is characterized in that, described insertion semiconductor layer and organic main body semiconductor layer, form the organic semiconductor raceway groove by inserting semiconductor layer and organic main body semiconductor layer, the organic semiconductor raceway groove has two kinds of structures, a kind of is to insert semiconductor layer below being, is the organic main body semiconductor layer above; Another kind be a kind of be the organic main body semiconductor layer below being, be to insert semiconductor layer above.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100505365C (en) * | 2006-10-13 | 2009-06-24 | 中国科学院化学研究所 | Method for realizing low voltage operating organic field effect transistor |
| CN109946349A (en) * | 2019-04-02 | 2019-06-28 | 武汉轻工大学 | Organic field effect tube and preparation method thereof and biogenic amine gas sensor |
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2006
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100505365C (en) * | 2006-10-13 | 2009-06-24 | 中国科学院化学研究所 | Method for realizing low voltage operating organic field effect transistor |
| CN109946349A (en) * | 2019-04-02 | 2019-06-28 | 武汉轻工大学 | Organic field effect tube and preparation method thereof and biogenic amine gas sensor |
| CN109946349B (en) * | 2019-04-02 | 2021-10-29 | 武汉轻工大学 | Organic field effect transistor, preparation method thereof and biogenic amine gas-sensitive sensor |
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