CN101095225A - Semiconductor device with embedded heat spreader - Google Patents

Semiconductor device with embedded heat spreader Download PDF

Info

Publication number
CN101095225A
CN101095225A CNA200580045398XA CN200580045398A CN101095225A CN 101095225 A CN101095225 A CN 101095225A CN A200580045398X A CNA200580045398X A CN A200580045398XA CN 200580045398 A CN200580045398 A CN 200580045398A CN 101095225 A CN101095225 A CN 101095225A
Authority
CN
China
Prior art keywords
conductive substrate
thermal conductive
attached
tube core
ribbon lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200580045398XA
Other languages
Chinese (zh)
Inventor
P·福格特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of CN101095225A publication Critical patent/CN101095225A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06579—TAB carriers; beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1094—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

In some embodiments an apparatus may comprise a semiconductor die, an elastomer layer attached to the die, a tape lead attached to the elastomer, a portion of the tape lead exposed through the elastomer to connect with the die, a polymer resin attached to the tape lead, and a thermally conductive substrate attached to the polymer resin such that the thermally conductive substrate can spread heat from the semiconductor die.

Description

Semiconductor device with embedded heat spreader
Background technology
Semiconductor constantly has major progress in the many decades in the past.Semi-conductive complexity increases simultaneously size day by day and dwindles day by day and produced its own law, Moore's Law, i.e. the number of transistors exponentially of each integrated circuit growth.These increased need be in many relevant industries similar growth, such as the semiconductor packages industry.
Semiconductor produces heat when work.If heat can not dissipate, will damage semiconductor or it is broken down.Along with the increase of transistor density in the semiconductor packages, heat radiation has just become a problem.
Substrate and encapsulation influence semiconducting behavior in many aspects.Integrated circuit normal packed and reside in usually in the substrate or on.Electricity, heat and machinery etc. consider that item is all relevant with the design of substrate and encapsulation.For example, heat is removed in substrate and encapsulation from integrated circuit, power and signaling also are provided simultaneously.
Semiconductor can be encapsulated as stacked arrangement.Stacked arrangement is for power and signaling being provided to semiconductor and for heat radiation higher requirement being arranged all generally.
Description of drawings
Fig. 1 is to use the exploded view of the component layer of copper substrate.
Fig. 2 is to use the singulated dies component instance of copper substrate.
Fig. 3 is to use a plurality of tube core component instances of copper substrate.
Embodiment
In the following description, many details have been proposed.But should be understood that embodiments of the invention do not have these details can realize yet.In other cases, well-known circuit, structure and technology are not shown specifically, in order to avoid blured the understanding of the present invention.
In specification, mention " embodiment " or " embodiment " etc., be meant in conjunction with the described particular characteristics of this embodiment, structure or feature to be included at least one aspect of the present invention.The phrase " in one embodiment " that occurs everywhere in specification not necessarily all refers to same embodiment.Below illustrated at least to the hot property of semiconductor device and to the improvement of a plurality of devices in the multitube core stacked package.
In general, the typical substrate material of using in semiconductor packages can the laminated material of heat conduction replaces from semiconductor element with improving.For example, the copper base substrate that is bonded with the individual layer polyimide layer on the substrate can conduct the heat of tube core.In this example, copper wiring layer then can be adhered to the opposite side of polyimides, to finish an interconnect substrate.This interconnect substrate can provide wiring layer, with signal distributions to semiconductor element, and should interconnection insulate by polyimide layer and thermal conductive substrate.An embodiment can improve the heat energy power and the interconnection electrical property of semiconductor device.
Fig. 1-3 illustrates DRAM and DRAM stacked package embodiment, with substrate and the encapsulation of showing that bright this paper explains.Using DRAM herein is for illustrative purposes, but embodiments of the invention are not limited to use any concrete semiconductor device or circuit.These embodiment can introduce a heat conductor in device stack, heat is transmitted to the edge of stacked package from the DRAM tube core of burying.In package edge, signal interconnection solder bump or other interconnection can be sent to heat the DRAM stack surface and to system substrate, can dissipate away at this heat.Copper substrate also can be connected to ground, and as the ground reference of high speed signal.In the present embodiment, this ground reference has been improved the signal integrity of DRAM signal.
Fig. 1 is to use the exploded view of component layer of the semiconductor packages 100 of thermal conductive substrate 110.In the present embodiment, thermal conductive substrate 110 comprises copper, though any backing material all can use, needs only it and has sufficiently high thermal conductivity.In one embodiment, thermal conductive substrate is a laminated material, is a kind of or any combination with material of enough high thermal conductivities, to allow substrate as thermal conductive substrate work, heat is spread out from semiconductor element.
Consult Fig. 1, exploded view comprises backing film-substrate 115, such as the polyimides band, to be adhered on the thermal conductive substrate 110.But this is an example, and any other material that is suitable for the backing film-substrate all can use.Wiring layer such as ribbon lead 120 next-door neighbour backing film-substrate 115, and on the opposite side away from the backing film-substrate 115 of thermal conductive substrate 110.In one embodiment, wiring layer is a copper, but any Heat Conduction Material all can use.
Present embodiment has elastomer layer 125, is clipped between ribbon lead 120 and the semiconductor element 130.Elastomer layer 125 absorbs the stress that thermal expansion produces.Elastomer layer 125 can have opening, can be connected with semiconductor element 130 at this ribbon lead 120.Elastomer is polymeric material normally, and this material can stand big and reversible strain, and is used to absorb the stress between each layer that may have different heat expansion coefficient.In addition, present embodiment uses the DRAM tube core as semiconductor element 130.Any semiconductor all can be used in the semiconductor element 130, and can be according to principle of the present disclosure.In one embodiment, mold compound 105 is attachable to thermal conductive substrate 110, as shown in Figure 1.
Fig. 2 illustrates singulated dies assembly 200, is made up of the component layer of Fig. 1, obtains using the semiconductor packages of thermal conductive substrate 210.In the present embodiment, thermal conductive substrate 210 comprises copper, though any backing material all can use, needs only it and has sufficiently high thermal conductivity.In one embodiment, thermal conductive substrate is a laminated material, is a kind of or any combination with material of enough high thermal conductivities, to allow substrate as thermal conductive substrate work, heat is spread out from semiconductor element.Thermal conductive substrate 210 also can be connected to ground and be used as the ground reference of high speed signal.In the present embodiment, this ground reference has been improved the signal integrity of DRAM signal.
Consult Fig. 2, assembly 200 comprises backing film-substrate 215, and such as the polyimides band, it is adhered to thermal conductive substrate 210.But any other material that is suitable for the backing film-substrate all can use.Wiring layer such as ribbon lead 220 is connected to backing film-substrate 215, and on the opposite side away from the backing film-substrate 215 of thermal conductive substrate 210.In one embodiment, wiring layer is a copper, but any electric conducting material all can use.Present embodiment also comprises soldered ball 240, and they are attached to ribbon lead 220 at the edge of assembly 200, and is structurally supported by thermal conductive substrate 210 and backing film-substrate 215.Soldered ball 240 can be any other material that is suitable for electrical interconnection.
Present embodiment has elastomer layer 225, is clipped between ribbon lead 220 and the semiconductor element 230.Elastomer layer 225 absorbs the stress that thermal expansion produces.In the present embodiment, elastomer layer 225 has opening, is connected to semiconductor element 230 at this ribbon lead 220.In addition, present embodiment uses the DRAM tube core as semiconductor element 230.Any semiconductor all can be used in the semiconductor element 230, and according to principle of the present disclosure.In one embodiment, mold compound 205 is attachable to thermal conductive substrate 210, as shown in Figure 2.
Fig. 3 illustrates the embodiment of multitube core assembly 300, and the thermal conductive substrate of use is placed between the semiconductor element 130 of semiconductor element such as Fig. 1.In one embodiment, each all is laminated material for a thermal conductive substrate, is a kind of or any combination with material of enough high thermal conductivities, to allow substrate as thermal conductive substrate work, heat is spread out from semiconductor element.Multitube core assembly 300 can be made up of a plurality of assemblies 200 of Fig. 2.The embodiment multitube core assembly 300 of Fig. 3 is the stacked arrangement that comprise a plurality of thermal conductive substrate.
In the present embodiment, thermal conductive substrate 310 comprises copper, though any backing material all can use, needs only it and has sufficiently high thermal conductivity.Thermal conductive substrate 310 also can be connected to ground, and is used as the ground reference of high speed signal.Equally, this ground reference has been improved and has been dealt into or from the signal integrity of any semiconductor element 330.
The multitube core assembly 300 of Fig. 3 comprises elastomer layer 325, between semiconductor element and adjacent thermal conductive substrates.Present embodiment multitube core assembly 300 also comprises the connection ball, and such as soldered ball 340, they connect the adjacent assemblies in the multitube core assembly 300.Having used soldered ball 340 in the present embodiment, can be any other material that is suitable for electrical interconnection but connect ball.
Consult Fig. 2, thermal conductive substrate and transistor core assembly can be with following method manufacturings.Polymer resin can be adhered on the thermal conductive substrate.In the present embodiment, thermal conductive substrate can be the copper radiator, but any suitable thermal conductive substrate material all can use.Example polymer resin is the polyimides band, but embodiment is not limited to use the polyimides band as polymer resin.
This method can comprise ribbon lead is attached on the polymer resin.Example tape lead can comprise copper, and as described in above device and the system, but any material all can use, if it can be configured to wiring layer to transmit the signal of telecommunication.The present embodiment method also comprises elastomer is attached on the ribbon lead.In one embodiment, elastomer has opening, to expose a part of ribbon lead.
Present embodiment comprises elastomer is attached on the tube core that wherein tube core can be any semiconductor element, for example the DRAM tube core.This method comprises attached die to ribbon lead, such as the copper strips shape lead-in wire of above-mentioned example embodiment.A kind of embodiment method also can comprise at least one soldered ball is attached on the ribbon lead.
The embodiment method can comprise above method, and also comprises the exposed side that second elastomer layer is formed into tube core.In addition, present embodiment also can comprise second elastomer layer is attached on the contiguous radiator.In one embodiment, these methods can repeat, thereby create the stacked wafer module with a plurality of radiators.
Under the prerequisite that does not deviate from its spirit or essential characteristic, the present invention can implement with other concrete form.It only is illustrative in all respects that described embodiment should be considered to, rather than constraint or restrictive.So scope of the present invention is not by aforementioned specification but is pointed out by appended claims.Drop on that institute in the meaning that is equivalent to claim, the spirit and scope changes, modifications and changes all should comprise within the scope of the appended claims.

Claims (22)

1. device comprises:
Elastomer layer;
Ribbon lead is attached to described elastomer layer;
Polymer resin is attached to described ribbon lead; And
Thermal conductive substrate is attached to described polymer resin, described thermal conductive substrate dissipate heat.
2. device as claimed in claim 1 also comprises the tube core that is attached to described elastomer layer, and described tube core is connected with the described ribbon lead of a part that exposes by described elastomer, and described thermal conductive substrate diffusion is from the heat of described tube core.
3. device as claimed in claim 2, wherein said tube core is DRAM.
4. device as claimed in claim 1, wherein said polymer resin are the polyimides bands.
5. device as claimed in claim 1, wherein said thermal conductive substrate is a copper substrate.
6. device as claimed in claim 2, wherein said thermal conductive substrate also comprise the electric ground reference that is used for described tube core.
7. device as claimed in claim 1, wherein said thermal conductive substrate are the laminations of multiple material.
8. device as claimed in claim 1 also comprises at least one the soldered ball interconnection that is attached to described thermal conductive substrate.
9. system comprises:
First device; And
Second device is arranged to laminated device with first device, and each device comprises:
Elastomer layer;
Ribbon lead is attached to described elastomer layer;
Polymer resin is attached to described ribbon lead;
Thermal conductive substrate is attached to described polymer resin, described thermal conductive substrate dissipate heat; And
At least one soldered ball interconnection is attached to described thermal conductive substrate.
10. system as claimed in claim 9, wherein at least one in first device and second device comprises tube core, and described tube core is connected with the described ribbon lead of a part that exposes by described elastomer, and described thermal conductive substrate diffusion is from the heat of described tube core.
11. system as claimed in claim 10 also is included in the elastomeric adhesive between the described thermal conductive substrate of described tube core to the first device of second device.
12. system as claimed in claim 9 also comprises the printed circuit board (PCB) that is attached to first described at least one soldered ball interconnection of installing, described printed circuit board (PCB) dissipates from the heat of stacked arrangement.
13. a method comprises:
Polymer resin is adhered on the thermal conductive substrate;
Ribbon lead is attached on the described polymer resin;
Elastomer is attached on the described ribbon lead, and described elastomer has opening, to expose a part of described ribbon lead;
Described elastomer is attached on the tube core; And
With described attached die to described ribbon lead.
14. method as claimed in claim 13 also comprises at least one ball is attached on the described ribbon lead.
15. method as claimed in claim 14, wherein said ball is a soldered ball.
16. method as claimed in claim 14 also comprises the exposed side that second elastomer layer is formed into described tube core.
17. method as claimed in claim 16 also comprises second elastomer layer is attached on the contiguous thermal conductive substrate.
18. method as claimed in claim 17 also comprises the method as claimed in claim 14 that repeats, the stacked wafer module that has thermal conductive substrate with establishment.
19. method as claimed in claim 13, wherein said tube core is DRAM.
20. method as claimed in claim 13, wherein said polymer resin are the polyimides bands.
21. method as claimed in claim 13, wherein said thermal conductive substrate are the copper radiators.
22. method as claimed in claim 13, wherein said ribbon lead are copper strips shape lead-in wires.
CNA200580045398XA 2004-12-30 2005-12-29 Semiconductor device with embedded heat spreader Pending CN101095225A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/027,291 US7183638B2 (en) 2004-12-30 2004-12-30 Embedded heat spreader
US11/027,291 2004-12-30

Publications (1)

Publication Number Publication Date
CN101095225A true CN101095225A (en) 2007-12-26

Family

ID=36581718

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200580045398XA Pending CN101095225A (en) 2004-12-30 2005-12-29 Semiconductor device with embedded heat spreader

Country Status (7)

Country Link
US (2) US7183638B2 (en)
JP (1) JP2008527697A (en)
CN (1) CN101095225A (en)
DE (1) DE112005003273T5 (en)
GB (1) GB2438528B (en)
TW (1) TWI314039B (en)
WO (1) WO2006072107A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049313B2 (en) * 2006-09-20 2011-11-01 Freescale Semiconductor, Inc. Heat spreader for semiconductor package
US8643172B2 (en) * 2007-06-08 2014-02-04 Freescale Semiconductor, Inc. Heat spreader for center gate molding
US20110012257A1 (en) * 2009-07-14 2011-01-20 Freescale Semiconductor, Inc Heat spreader for semiconductor package
US9269646B2 (en) 2011-11-14 2016-02-23 Micron Technology, Inc. Semiconductor die assemblies with enhanced thermal management and semiconductor devices including same
US10216657B2 (en) 2016-09-30 2019-02-26 Intel Corporation Extended platform with additional memory module slots per CPU socket and configured for increased performance
US9818457B1 (en) 2016-09-30 2017-11-14 Intel Corporation Extended platform with additional memory module slots per CPU socket

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1617748A1 (en) 1966-08-06 1971-04-08 Rajewsky Boris Prof Dr Rheumatism diagnostic
US4547570A (en) 1983-10-20 1985-10-15 The Dow Chemical Company Process for preparing cellulose ethers
US4650716A (en) 1985-05-14 1987-03-17 Hercules Incorporated Novel salts of carboxymethylcellulose
US4689408A (en) 1985-05-14 1987-08-25 Hercules Incorporated Method of preparing salts of carboxymethylcellulose
US4975761A (en) * 1989-09-05 1990-12-04 Advanced Micro Devices, Inc. High performance plastic encapsulated package for integrated circuit die
JP2780649B2 (en) * 1994-09-30 1998-07-30 日本電気株式会社 Semiconductor device
JP2944449B2 (en) * 1995-02-24 1999-09-06 日本電気株式会社 Semiconductor package and manufacturing method thereof
US5861666A (en) * 1995-08-30 1999-01-19 Tessera, Inc. Stacked chip assembly
JP2891665B2 (en) * 1996-03-22 1999-05-17 株式会社日立製作所 Semiconductor integrated circuit device and method of manufacturing the same
DE19746264A1 (en) 1997-10-20 1999-04-29 Wolff Walsrode Ag Cellulose ether with low salt content
JPH11145345A (en) 1997-11-12 1999-05-28 Hitachi Ltd Semiconductor device and its manufacture
US6020629A (en) * 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication
US6278616B1 (en) * 1998-07-07 2001-08-21 Texas Instruments Incorporated Modifying memory device organization in high density packages
US6320126B1 (en) * 1998-07-14 2001-11-20 Texas Instruments Incorporated Vertical ball grid array integrated circuit package
JP2000077563A (en) * 1998-08-31 2000-03-14 Sharp Corp Semiconductor device and its manufacture
EP1140229B1 (en) 1998-12-16 2010-10-06 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Acidic superabsorbent polysaccharides
US6130477A (en) * 1999-03-17 2000-10-10 Chen; Tsung-Chieh Thin enhanced TAB BGA package having improved heat dissipation
US6093969A (en) * 1999-05-15 2000-07-25 Lin; Paul T. Face-to-face (FTF) stacked assembly of substrate-on-bare-chip (SOBC) modules
TW409377B (en) * 1999-05-21 2000-10-21 Siliconware Precision Industries Co Ltd Small scale ball grid array package
DE19933265A1 (en) * 1999-07-15 2001-02-01 Siemens Ag TSOP memory chip package assembly
US6122171A (en) * 1999-07-30 2000-09-19 Micron Technology, Inc. Heat sink chip package and method of making
GB2358957B (en) * 1999-10-27 2004-06-23 Ibm Ball grid array module
KR100324333B1 (en) * 2000-01-04 2002-02-16 박종섭 Stacked package and fabricating method thereof
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
US6664649B2 (en) * 2001-02-28 2003-12-16 Siliconware Precision Industries Co., Ltd. Lead-on-chip type of semiconductor package with embedded heat sink
WO2003019654A1 (en) 2001-08-22 2003-03-06 Tessera, Inc. Stacked chip assembly with stiffening layer
JP2005506690A (en) * 2001-10-09 2005-03-03 テッセラ，インコーポレイテッド Stacked package

Also Published As

Publication number Publication date
TWI314039B (en) 2009-08-21
WO2006072107A3 (en) 2006-09-28
TW200631492A (en) 2006-09-01
DE112005003273T5 (en) 2008-04-17
WO2006072107A2 (en) 2006-07-06
US7268020B2 (en) 2007-09-11
US20060145320A1 (en) 2006-07-06
US7183638B2 (en) 2007-02-27
US20070128768A1 (en) 2007-06-07
JP2008527697A (en) 2008-07-24
GB2438528B (en) 2010-10-27
GB0712810D0 (en) 2007-08-08
GB2438528A (en) 2007-11-28

Similar Documents

Publication Publication Date Title
KR101004842B1 (en) Electronic Chip Module
CN100521199C (en) Heat dissipation electronic devices and forming method thereof
US7772692B2 (en) Semiconductor device with cooling member
US20080278917A1 (en) Heat dissipation module and method for fabricating the same
US6809416B1 (en) Package for integrated circuit with thermal vias and method thereof
US7786571B2 (en) Heat-conductive package structure
US20150214198A1 (en) Stacked semiconductor system having interposer of half-etched and molded sheet metal
JP2005217405A (en) Thermal dissipation type semiconductor package and manufacturing method of same
CN103782381A (en) Electronic assembly including die on substrate with heat spreader having an open window on the die
KR970030723A (en) Solder Ball Array Package with Heat Sink Attached to Bottom
KR100973722B1 (en) Electronic module assembly with heat spreader
JP6862896B2 (en) Semiconductor devices and methods for manufacturing semiconductor devices
US20120314369A1 (en) Package carrier and package structure
US9147600B2 (en) Packages for multiple semiconductor chips
CN101095225A (en) Semiconductor device with embedded heat spreader
CN102800636A (en) Electronic component package and method for manufacturing the same
KR100769527B1 (en) Embedded printed circuit board and manufacturing method thereof
CN101419957A (en) Semiconductor device and manufacture method thereof
CN111354691B (en) Package substrate structure
US7235889B2 (en) Integrated heatspreader for use in wire bonded ball grid array semiconductor packages
US7606034B2 (en) Thermally enhanced memory module
US20040195671A1 (en) Semiconductor device
JP2004281804A (en) Circuit board
TW200826261A (en) Thermally enhanced BGA package apparatus & method
CN101308827A (en) Cooling type semiconductor package

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20071226