CN101093827A - Structure for packaging light emitting diode - Google Patents
Structure for packaging light emitting diode Download PDFInfo
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- CN101093827A CN101093827A CNA2006100829087A CN200610082908A CN101093827A CN 101093827 A CN101093827 A CN 101093827A CN A2006100829087 A CNA2006100829087 A CN A2006100829087A CN 200610082908 A CN200610082908 A CN 200610082908A CN 101093827 A CN101093827 A CN 101093827A
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- crystal grain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Packaging structure for light emitting diode is in use for emitting a wavelength with target peak. The packaging structure includes a supporting body, a first crystal grain, and a second crystal grain. Being setup on the supporting body, the first crystal grain possesses first peak wavelength, which is larger than wavelength with target peak. Being setup on the supporting body, the second crystal grain possesses second peak wavelength, which is smaller than wavelength with target peak. The first crystal grain and the second crystal grain emit lights in same color system. Based on more than two pieces of light emitting diode, the packaging structure can emit wavelength with target peak in order to raise utilization ratio of crystal grains, and lower production cost.
Description
Technical field
The present invention relates to a kind of diode package structure, particularly relate to a kind of encapsulating structure of light-emitting diode.
Background technology
Light-emitting diode is by the made light-emitting component of semi-conducting material, and element has two electrode terminals, applies voltage between terminal, feeds minimum voltage, via the combination in electronics electricity hole, dump energy can be excited with the form of light and disengage.
Be different from general incandescent lamp bulb, light-emitting diode belongs to chemiluminescence, has advantages such as power consumption is low, component life long, need not warm up the lamp time, reaction speed is fast.Add that its volume is little, vibration resistance, be fit to volume production, the demand on the fit applications is made the element of minimum or array easily.Light-emitting diode generally is used on the indicating device and display unit of information, communication, consumption electronic products at present, becomes critical elements indispensable in the daily life.Recently, utilize light-emitting diode more to be employed as LCD (Liquid crystal Display, backlight LCD), and the trend that replaces traditional cold cathodouminescence fluorescent tube is gradually arranged.
In the prior art, crystal grain in the package structure for LED (Die) normally utilizes crystalline substance of heap of stone (Epitaxy) processing procedure of manufacture of semiconductor to make, and wherein, the luminous wavelength of crystal grain is decided by the epitaxial layer material, brilliant processing procedure therefore of heap of stone is in the light-emitting diode processing procedure, the some that cost is the highest.
As shown in Figure 1, can have a plurality of LED crystal particle D on the semiconductor crystal wafer 1, and wafer 1 can be selected suitable crystal grain D after through cutting and encapsulates, package structure for LED is applied among the various products.
Though in manufacture process, wafer is controlled so that whole crystal grain sends the light of a color of object through identical processing procedure.But same batch of plural crystal grain that manufacturing is come out, or even the plural crystal grain on the same wafer usually all may have sizable wavelength change (wavelength lengthvariation).For example same batch crystal grain color of object is a green, but the long 500nm of being of the light wave spike that one of them crystal grain of possibility sends, and the light wave spike length that another crystal grain but may send is 506nm.
Yet, in some application, for example be in the senior car light of LCD backlight module or automobile, often need the almost consistent package structure for LED of plural wavelength.Therefore, the crest wavelength of crystal grain can be strict with.That is to say,, have only and fall into a narrow and small crest wave-length coverage person, just meet dealer's quality keyholed back plate standard, can be chosen to non-defective unit and be applied in the product no matter be same batch of plural crystal grain of producing or the plural crystal grain on the same wafer.Other crystal grain outside wave-length coverage often become defective products, can't use.Thus, crystal grain all on the wafer then can't use fully, and the crystal grain utilance is not high, make that the production cost of package structure for LED is high, and cause the waste of former material.
This shows that above-mentioned existing package structure for LED obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of package structure for LED of new structure, just becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing package structure for LED exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of package structure for LED of new structure, can improve general existing package structure for LED, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is, overcome the defective that existing package structure for LED exists, and provide a kind of package structure for LED of new structure, technical problem to be solved is that to make it send the object wave spike by plural light-emitting diode long, to improve utilization ratio of crystal grains, and reduce production costs, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of package structure for LED that the present invention proposes, long in order to send an object wave spike, it comprises: a supporting body; One first crystal grain is arranged at this supporting body, and this first crystal grain luminous has a primary peak wavelength, and this primary peak wavelength is long greater than this object wave spike; And one second crystal grain, being arranged at this supporting body, this second crystal grain luminous has a secondary peak wavelength, and this secondary peak wavelength is long less than this object wave spike, and this primary peak wavelength and this secondary peak wavelength belong to same colour system.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid package structure for LED, wherein said supporting body are a substrate or a lead frame.
Aforesaid package structure for LED, wherein said first crystal grain and this second crystal grain while or not luminous simultaneously.
Aforesaid package structure for LED, the difference of wherein said primary peak wavelength and this secondary peak wavelength is less than 50nm.
Aforesaid package structure for LED, the difference of wherein said primary peak wavelength and this secondary peak wavelength is less than 30nm.
Aforesaid package structure for LED, the difference of wherein said target wavelength and this primary peak wavelength is not equal to or equals the difference of this target wavelength and this secondary peak wavelength.
Aforesaid package structure for LED, wherein said first crystal grain is different with the luminous intensity of this second crystal grain.
Aforesaid package structure for LED, wherein said object wave spike are about between between the 615nm to 650nm, approximately between between the 515nm to 555nm or approximately between between the 455nm to 485nm.
Aforesaid package structure for LED, it more comprises one the 3rd crystal grain, and it has one the 3rd crest wavelength, and this primary peak wavelength, this secondary peak wavelength and the 3rd crest wavelength belong to this colour system.
Aforesaid package structure for LED, wherein said the 3rd crest wavelength is greater than this primary peak wavelength, and the difference of the 3rd crest wavelength and this secondary peak wavelength is less than 50nm.
Aforesaid package structure for LED, wherein said the 3rd crest wavelength is less than this secondary peak wavelength, and the difference of this primary peak wavelength and the 3rd crest wavelength is less than 50nm.
By technique scheme, package structure for LED of the present invention has following advantage at least:
A kind of package structure for LED of the present invention has plural crystal grain and primary peak wavelength and secondary peak wavelength and belongs to same colour system.Compared with prior art, package structure for LED of the present invention can be by selecting the plural crystal grain with suitable coupling wavelength, just capable of being combinedly goes out the long plural crystal grain of object wave spike, and plural plural crystal grain is packaged together.Thus, package structure for LED can make human eye in object wave spike strong point, experiences just like two luminous intensities with the long light-emitting diode of object wave spike.In addition, by the process of selecting coupling crystal grain, the encapsulation dealer scope that can relax the crest wavelength of non-defective unit crystal grain, and then can promote the crystal grain utilance of same wafer or same batch of wafer reducing production costs, and reduces the waste of former material.
In sum, the package structure for LED of novelty of the present invention, it is long to send the object wave spike by plural light-emitting diode, with the raising utilization ratio of crystal grains, and reduces production costs.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing package structure for LED has the effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the schematic diagram that wafer forms plural crystal grain in the prior art through cutting.
Fig. 2 is a schematic diagram of package structure for LED of the present invention.
Fig. 3 is another schematic diagram of package structure for LED of the present invention.
Fig. 4 is another schematic diagram of package structure for LED of the present invention.
Fig. 5 is another schematic diagram of package structure for LED of the present invention.
Fig. 6 is in the package structure for LED of the present invention, a schematic diagram of first crystal grain and second spectrum of wavelengths that crystal grain sends, and wherein, the difference of first crystal grain and target wavelength equals the difference of second crystal grain and target wavelength.
Fig. 7 is in the package structure for LED of the present invention, another schematic diagram of first crystal grain and second spectrum of wavelengths that crystal grain sends, and wherein, the difference of first crystal grain and target wavelength is not equal to the difference of second crystal grain and target wavelength.
Fig. 8 is another schematic diagram of package structure for LED of the present invention.
1: wafer
2,2 ': package structure for LED
21,21 ': supporting body
22: the first crystal grain
23: the second crystal grain
24: the three crystal grain
25: lead-in wire
26: adhesive material
27: inside conductor
D: crystal grain
λ
t: the object wave spike is long
λ
1: the primary peak wavelength
λ
2: the secondary peak wavelength
λ
3: the 3rd crest wavelength
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of package structure for LED, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
At first, see also Fig. 2 to Fig. 3, first embodiment of package structure for LED of the present invention.
See also shown in Figure 2ly, package structure for LED 2 comprises a supporting body 21, one first crystal grain 22 and one second crystal grain 23.Wherein, package structure for LED 2 is in order to send an object wave peak wavelength X
t(target peak wavelength), object wave spike length can for example be between the ruddiness between the 615nm to 650nm, between the green glow between the 515nm to 555nm or crest wavelength approximately between the blue light between the 455nm to 485nm.That is to say that object wave spike length can be stipulated specification voluntarily by the dealer, the crest wavelength that receives for package structure for LED 2 relief human eyes.And package structure for LED 2 can utilize the persistence of vision phenomenon of human eye, is simultaneously luminous or not luminous simultaneously no matter make first crystal grain 22 and second crystal grain 23, and it is long all to obtain the object wave spike.
Certainly, package structure for LED 2 object wave spikes are long also can be defined as respectively between first ruddiness (R1) between the 620.5nm to 645.0nm, crest wavelength approximately between second ruddiness (R2) between the 612.5nm to 620.5nm, crest wavelength approximately between first green glow (G1) between the 520nm to 550nm, crest wavelength approximately between second green glow (G2) between the 490nm to 520nm, crest wavelength approximately between first blue light (B1) between the 460nm to 490nm or crest wavelength approximately between second blue light (B2) between the 440nm to 460nm.
See also Fig. 2, first crystal grain 22 and second crystal grain 23 are arranged at supporting body 21 respectively.Wherein, supporting body 21 can be a substrate or a lead frame.In the present embodiment, the encapsulation form of light-emitting diode and the material of substrate are not limited.For example, when supporting body 21 is substrate, can be transparency carrier, also can be opaque substrate.And the pattern of encapsulation can be as among Fig. 2 being surface encapsulation (SurfaceMounting Device, form SMD).First crystal grain 22 and second crystal grain 23 can go between (wiring) 25 by plural number and electrically connect with supporting body 21, utilize adhesive material 26 protection first crystal grain 22 and second crystal grain 23 again.
Consult shown in Figure 3ly clearly, certainly, first crystal grain 22 and second crystal grain 23 also can electrically carry out signal with the external world and link up by lead (interconnection) 27 within on the substrate, and do not need lead-in wire.Wherein, first crystal grain 22 and second crystal grain 23 also can utilize the form of covering crystalline substance (flip chip) and be installed on supporting body 21.
See also shown in Figure 4ly, when supporting body 21 ' was lead frame, then Feng Zhuan pattern then became the form of leaded package (leadframe package).In addition, among Fig. 5, the mode that first crystal grain 22 and second crystal grain 23 also can pile up is provided with and cooperates substrate and lead frame to be used as supporting body 21,21 ' again.
See also Fig. 2 and shown in Figure 6 again, first crystal grain 22 has a primary peak wavelength X
1, the primary peak wavelength X
1Greater than object wave peak wavelength X
t Second crystal grain 23 has a secondary peak wavelength X
2, the secondary peak wavelength X
2Less than object wave peak wavelength X
tWherein, first crystal grain 22 and second crystal grain 23 belong to the light of same colour system, and for example first crystal grain 22 and second crystal grain 23 light of greening colour system all for example is green, dark green, and first crystal grain 22 and second crystal grain 23 can be the crystal grain of institute's output on the same wafer.Certainly, but first crystal grain 22 and second crystal grain 23 also can be by different wafers be the same batch of crystal grain of being produced that in the present embodiment, first crystal grain 22 and second crystal grain 23 are example with the crystal grain of same wafer institute output.
When selecting crystal grain, need to measure earlier the crest wavelength of each crystal grain, be fit to be packaged together the plural crystal grain that the crest wavelength can match each other to pick out.Wherein, as long as the primary peak wavelength X of first crystal grain 22
1Secondary peak wavelength X with second crystal grain 23
2Difference (Δ λ) less than 50nm, can match each other, be positioned in the same encapsulating structure.
In the present embodiment, to send object wave peak wavelength X
tFor the package structure for LED 2 of 530nm is an example.When the long difference of first crystal grain 22 and object wave spike equals second crystal grain 23 and object wave peak wavelength X
tDifference, for example: the primary peak wavelength X
1Be about 535nm, the secondary peak wavelength X
2Be about 525nm, and the luminous efficiency of supposing first crystal grain 22 and second crystal grain 23 is when identical, provide identical electric current to first crystal grain 22 and second crystal grain 23, no matter be that first crystal grain 22 and second crystal grain 23 are luminous simultaneously or take turns fast when luminous, human eye is experienced the luminous intensity that object wave spike long value 530nm is presented, and is first crystal grain 22 and second crystal grain 23 totalling (shown in the dotted line spectrum of wavelengths) in object wave spike long value 530nm place luminous intensity.That is to say that by the coupling of wavelength, after first crystal grain 22 and second crystal grain 23 was packaged together, first crystal grain 22 and second crystal grain 23 is capable of being combined to go out object wave peak wavelength X
t, making human eye can't differentiate plural intergranule has the wavelength difference, can send target crest light wavelength lambda just like take two
tDie package the same together.
See also Fig. 2 and Fig. 7, in the present embodiment, to send object wave peak wavelength X
tFor the package structure for LED 2 of 530nm is an example.The difference of growing when first crystal grain 22 and object wave spike is a half of the long difference of second crystal grain 23 and object wave spike, for example: the primary peak wavelength X
1Be about 535nm, the secondary peak wavelength X
2Be about 520nm, suppose under first crystal grain 22 situation also identical, can promote the curtage value to two times of first crystal grain 22, so that the luminous intensity of first crystal grain 22 is two times of second crystal grain 23 with the luminous efficiency of second crystal grain 23.As shown in Figure 7, luminous simultaneously or take turns fast when luminous when first crystal grain 22 and second crystal grain 23, human eye is experienced object wave spike long value λ
tThe luminous intensity that the place presents is that first crystal grain 22 and second crystal grain 23 are in object wave spike long value λ
tThe totalling (shown in the dotted line spectrum of wavelengths) of place's luminous intensity.
Under the preferable situation, the primary peak wavelength X
1With the secondary peak wavelength X
2Difference less than 30nm, the long luminous intensity of the object wave spike that is combined into is stronger, and can form a main crest (main peak).In addition, just the wavelength of first crystal grain 22 and second crystal grain 23 adds the General Logistics Department at last, can't form single main crest, but because the luminance purity of light-emitting diode is higher, human eye still can't pick out the loss on the color saturation (Color Saturation).
Then, see also Fig. 8, with explanation package structure for LED second embodiment of the present invention.
Package structure for LED 2 ' more comprises one the 3rd crystal grain 24, and the 3rd crystal grain 24 has one the 3rd crest wavelength X
3, the 3rd crystal grain 24 and first crystal grain 22 and second crystal grain 23 send the light of same colour system.For instance, when first crystal grain 22 and second crystal grain 23 all send peach light, the 3rd crystal grain 24 sends wine-colored light, all belongs to the light of red colour system.
When package structure for LED 2 ' had three crystal grain, the maximum crest wavelength of crystal grain and the difference of minimum crest wavelength should be less than 50nm.That is to say, when the 3rd crest wavelength X
3Greater than the primary peak wavelength X
1The time, the 3rd crest wavelength X
3With the secondary peak wavelength X
2Difference less than 50nm.And when the 3rd crest wavelength X
3Less than the secondary peak wavelength X
2The time, the 3rd crest wavelength X
3With the primary peak wavelength X
1Difference less than 50nm.
Under the preferable situation, in the plural crystal grain of package structure for LED 2 ', the difference of maximum crest wavelength and minimum crest wavelength should be less than 30nm.
Certainly, in the package structure for LED of the present invention, also do not limit the crystal grain quantity in the encapsulating structure, as long as be plural crystal grain.
In sum, a kind of package structure for LED of the present invention has plural crystal grain and primary peak wavelength and secondary peak wavelength and belongs to same colour system.Compared with prior art, package structure for LED of the present invention can be by selecting the plural crystal grain with suitable coupling wavelength, just capable of being combinedly goes out the long plural crystal grain of object wave spike, and plural crystal grain more than two is packaged together.Thus, the encapsulating structure of light-emitting diode can make human eye in object wave spike strong point, experiences just like two luminous intensities with object wave spike long hair optical diode.In addition, by the process of selecting coupling crystal grain, the encapsulation dealer scope that can relax the crest wavelength of non-defective unit crystal grain, and then can promote the crystal grain utilance of same wafer or same batch of wafer reducing production costs, and reduces the waste of former material.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (11)
1, a kind of package structure for LED, long in order to send an object wave spike, it is characterized in that it comprises:
One supporting body;
One first crystal grain is arranged at this supporting body, and this first crystal grain luminous has a primary peak wavelength, and this primary peak wavelength is long greater than this object wave spike; And
One second crystal grain is arranged at this supporting body, and this second crystal grain luminous has a secondary peak wavelength, and this secondary peak wavelength is long less than this object wave spike, and this primary peak wavelength and this secondary peak wavelength belong to same colour system.
2, package structure for LED according to claim 1 is characterized in that wherein said supporting body is a substrate or a lead frame.
3, package structure for LED according to claim 1 is characterized in that wherein said first crystal grain and this second crystal grain while or not luminous simultaneously.
4, package structure for LED according to claim 1, the difference that it is characterized in that wherein said primary peak wavelength and this secondary peak wavelength is less than 50nm.
5, package structure for LED according to claim 1, the difference that it is characterized in that wherein said primary peak wavelength and this secondary peak wavelength is less than 30nm.
6, package structure for LED according to claim 1 is characterized in that the difference of wherein said target wavelength and this primary peak wavelength, is not equal to or equals the difference of this target wavelength and this secondary peak wavelength.
7, package structure for LED according to claim 1 is characterized in that wherein said first crystal grain is different with the luminous intensity of this second crystal grain.
8, package structure for LED according to claim 1 is characterized in that wherein said object wave spike is about between between the 615nm to 650nm, approximately between between the 515nm to 555nm or approximately between between the 455nm to 485nm.
9, package structure for LED according to claim 1 is characterized in that it more comprises:
One the 3rd crystal grain, it has one the 3rd crest wavelength, and this primary peak wavelength, this secondary peak wavelength and the 3rd crest wavelength belong to this colour system.
10, package structure for LED according to claim 9 is characterized in that wherein said the 3rd crest wavelength greater than this primary peak wavelength, and the difference of the 3rd crest wavelength and this secondary peak wavelength is less than 50nm.
11, package structure for LED according to claim 9 is characterized in that wherein said the 3rd crest wavelength less than this secondary peak wavelength, and the difference of this primary peak wavelength and the 3rd crest wavelength is less than 50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100829087A CN100481449C (en) | 2006-06-19 | 2006-06-19 | Structure for packaging light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100829087A CN100481449C (en) | 2006-06-19 | 2006-06-19 | Structure for packaging light emitting diode |
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| CN101093827A true CN101093827A (en) | 2007-12-26 |
| CN100481449C CN100481449C (en) | 2009-04-22 |
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| CNB2006100829087A Expired - Fee Related CN100481449C (en) | 2006-06-19 | 2006-06-19 | Structure for packaging light emitting diode |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645437A (en) * | 2008-08-04 | 2010-02-10 | 奇美电子股份有限公司 | Light-emitting diode packaging structure and application thereof |
| CN103547858A (en) * | 2011-04-13 | 2014-01-29 | 英特曼帝克司公司 | Led-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
| CN110164856A (en) * | 2019-06-11 | 2019-08-23 | 北京宇极芯光光电技术有限公司 | A kind of LED light emission device for the illumination of supermarket's fresh meat |
| CN110176449A (en) * | 2019-06-11 | 2019-08-27 | 北京宇极芯光光电技术有限公司 | A kind of LED light emission device meeting D50 standard sources |
| CN111913322A (en) * | 2019-05-09 | 2020-11-10 | 佛山市国星光电股份有限公司 | Backlight module and display device with same |
-
2006
- 2006-06-19 CN CNB2006100829087A patent/CN100481449C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645437A (en) * | 2008-08-04 | 2010-02-10 | 奇美电子股份有限公司 | Light-emitting diode packaging structure and application thereof |
| CN103547858A (en) * | 2011-04-13 | 2014-01-29 | 英特曼帝克司公司 | Led-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
| US9524954B2 (en) | 2011-04-13 | 2016-12-20 | Intematrix Corporation | LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
| US10204888B2 (en) | 2011-04-13 | 2019-02-12 | Intematix Corporation | LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
| CN111913322A (en) * | 2019-05-09 | 2020-11-10 | 佛山市国星光电股份有限公司 | Backlight module and display device with same |
| CN110164856A (en) * | 2019-06-11 | 2019-08-23 | 北京宇极芯光光电技术有限公司 | A kind of LED light emission device for the illumination of supermarket's fresh meat |
| CN110176449A (en) * | 2019-06-11 | 2019-08-27 | 北京宇极芯光光电技术有限公司 | A kind of LED light emission device meeting D50 standard sources |
| CN110176449B (en) * | 2019-06-11 | 2020-12-01 | 北京宇极芯光光电技术有限公司 | LED light-emitting device of light source according with D50 standard |
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