CN101092540A - Metal polish liquid, and prepartion method - Google Patents
Metal polish liquid, and prepartion method Download PDFInfo
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- CN101092540A CN101092540A CN 200610014412 CN200610014412A CN101092540A CN 101092540 A CN101092540 A CN 101092540A CN 200610014412 CN200610014412 CN 200610014412 CN 200610014412 A CN200610014412 A CN 200610014412A CN 101092540 A CN101092540 A CN 101092540A
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- polishing liquid
- abrasive material
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
This invention relates to a metal polishing solution, which is composed of: abrasive material 10-50 wt. %, surfactant 0.1-1 wt. %, pH regulator 1-5 wt. %, chelating agent 0.1-1 wt. %, and deionized water as balance. The granularity of the abrasive material is 15-100 nm. The pH value of the metal polishing solution is 8-12. The metal polishing solution is prepared by: filtering and purifying the above components of the metal polishing solution, introducing the components into a container through a mass flowmeter under negative pressure in a class 1000 clean room, and stirring uniformly. The metal polishing solution has such advantages as high polishing speed, high smoothness, small diameters, and little damage to wafer surface, wasy cleaning, no toxicity, no odor, no corrosion, simple process and easy operation.
Description
(1) technical field
The present invention relates to a kind of polishing fluid and preparation method thereof, particularly a kind of metal-polishing liquid and preparation method thereof.
(2) background technology
Medal polish is accurately machined one important process in metallic surface, and the effect of medal polish will directly influence the accurately machined quality in metallic surface.Present widely used metal-polishing liquid, because the particle of abrasive material is big, tensio-active agent adopts ionogenic surfactant more, so when polished metal surface, stains such as often remaining more red rust, patina, color spot, black photochromic layer, the finished product surface is not easy to clean; Particularly in, under the cold condition, result of use is poorer.
(3) summary of the invention
The objective of the invention is to overcome the shortcoming of existing metal-polishing liquid, provide a kind of efficiently, polishing efficiency height, cleaning performance is good and temperature tolerance is strong metal-polishing liquid and preparation method thereof.
Technical scheme of the present invention:
A kind of metal-polishing liquid is characterized in that: be made up of abrasive material, tensio-active agent, pH value conditioning agent, sequestrant and deionized water, the shared weight percent of various compositions is: abrasive material 10～50%; Tensio-active agent 0.1～1%; PH value conditioning agent 1～5%; Sequestrant 0.1～1%; Deionized water is a surplus.
A kind of above-mentioned metal-polishing liquid, pH value scope are 8～12.
Abrasive material of the present invention is meant that particle size range is water-soluble silicon sol or the metal oxide Al of 15～100nm
2O
3, CeO
2Or TiO
2The water-sol.
Tensio-active agent of the present invention is to adopt nonionic surface active agent, is aliphatic alcohol polyoxyethylene or alkylol amide.
PH conditioning agent of the present invention is hydramine, amine alkali, tetramethyl-oxyammonia or quaternary amine alkali.In a kind of or its combination.
Sequestrant of the present invention has water-soluble and metal ion not, can be a kind of or its combination in EDTA, EDTA disodium, azanol, amine salt and the amine.
A kind of preparation method of above-mentioned metal-polishing liquid, it is characterized in that: the various components that at first will prepare polishing fluid are carried out the filtration, purification processing respectively, then in the environment of thousand grades of decontamination chambers, with various components under the power of negative pressure of vacuum, get final product by stirring in the mass flowmeter input pod jar and fully, mixing.
The advantage of the polishing fluid that the present invention is prepared is: degree of enrichment height, polishing speed are fast, and Flatness is good; Particle diameter is little, and the metallic surface damage is little; Adopt organic bases, no sodium ion stains; Adopt the not sequestrant of metal ion, metal ion is had extremely strong sequestering action; Adopt nonionic surface active agent, abrasive material and reaction product are removed from the metallic surface easily; Metal surface polishing rear impurity particle pickup is few, cleans easily; Temperature tolerance is strong, in, result of use is good under the cold condition; And this product is nontoxic, no stink, and no crystallization does not have precipitation, and human body skin is not had corrosive nature; The polishing fluid preparation is simple, easily operation.
(4) embodiment
Embodiment 1:
A kind of metal-polishing liquid is made up of water-soluble silicon sol, alkylol amide, hydramine, hexahydroxy-propyl group propylene diamine and deionized water, and the shared weight percent of various compositions is: water-soluble silicon sol 20%, particle diameter 20～30nm; Alkylol amide 0.3%; Hydramine 2%; Hexahydroxy-propyl group propylene diamine 0.6%; Deionized water is a surplus.The preparation method of described polishing fluid is: the various components that at first will prepare polishing fluid are carried out the filtration, purification processing respectively, then in the environment of thousand grades of decontamination chambers, various components under the power of negative pressure of vacuum, are got final product by stirring in the mass flowmeter input pod jar and fully, mixing.Above-mentioned polishing fluid and deionized water were diluted by 1: 10, on Lanzhou-Xinjiang X62 815-1 single side polishing machine, test: at 300g/cm
2, 40 ± 5 ℃, under the condition of 3L ± 0.3L/min, the copper metal of plated film to be polished, speed is 0.05 μ/min.
Embodiment 2:
A kind of polishing fluid that is used for metal is by CeO
2The water-sol, aliphatic alcohol polyoxyethylene, sodium hydroxide, tetrahydroxyethy-lethylenediamine and deionized water are formed, and the shared weight percent of various compositions is: CeO
2The water-sol 30%, particle diameter 30nm～40nm; Aliphatic alcohol polyoxyethylene 0.4%; Tetramethyl-oxyammonia 1%; Tetrahydroxyethy-lethylenediamine 0.9%; Deionized water is a surplus.The preparation method of described polishing fluid is identical with embodiment 1.Above-mentioned polishing fluid and deionized water were diluted by 1: 10, on Lanzhou-Xinjiang X62 815-1 single side polishing machine, test: at 300g/cm
2, 40 ± 5 ℃, under the condition of 3L ± 0.3L/min, the copper metal of plated film to be polished, speed is 0.1 μ/min.
Claims (7)
1. metal-polishing liquid, it is characterized in that: be made up of abrasive material, tensio-active agent, pH value conditioning agent, sequestrant and deionized water, the shared weight percent of various compositions is: abrasive material 10～50%; Tensio-active agent 0.1～1%; PH value conditioning agent 1～5%; Sequestrant 0.1～1%; Deionized water is a surplus.
2. metal-polishing liquid according to claim 1 is characterized in that: the pH value scope is 8～12.
3. metal-polishing liquid according to claim 1 is characterized in that: abrasive material is meant that particle size range is water-soluble silicon sol or the metal oxide Al of 15～100nm
2O
3, CeO
2Or TiO
2The water-sol.
4. metal-polishing liquid according to claim 1 is characterized in that: tensio-active agent is aliphatic alcohol polyoxyethylene or alkylol amide.
5. metal-polishing liquid according to claim 1 is characterized in that: the PH conditioning agent is a kind of or its combination in hydramine, amine alkali, tetramethyl-oxyammonia or the quaternary amine alkali.
6. metal-polishing liquid according to claim 1 is characterized in that: sequestrant is a kind of or its combination in EDTA, EDTA disodium, azanol, amine salt and the amine.
7. the preparation method of an above-mentioned metal-polishing liquid, it is characterized in that: the various components that at first will prepare polishing fluid are carried out the filtration, purification processing respectively, then in the environment of thousand grades of decontamination chambers, with various components under the power of negative pressure of vacuum, get final product by stirring in the mass flowmeter input pod jar and fully, mixing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610014412 CN101092540A (en) | 2006-06-23 | 2006-06-23 | Metal polish liquid, and prepartion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610014412 CN101092540A (en) | 2006-06-23 | 2006-06-23 | Metal polish liquid, and prepartion method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101092540A true CN101092540A (en) | 2007-12-26 |
Family
ID=38990984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610014412 Pending CN101092540A (en) | 2006-06-23 | 2006-06-23 | Metal polish liquid, and prepartion method |
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| CN (1) | CN101092540A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102010658A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Preparation method of chemical and mechanical polishing liquid of tungsten-molybdenum alloy material |
| CN102010670A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Preparation method of high-concentration Ti barrier layer surface chemically-mechanical polishing solution |
| CN102020975A (en) * | 2010-07-21 | 2011-04-20 | 天津晶岭微电子材料有限公司 | Preparation method of magnesium aluminum alloy surface chemically mechanical polishing solution |
| CN104109481A (en) * | 2014-06-26 | 2014-10-22 | 河北宇天昊远纳米材料有限公司 | Preparation method of sapphire substrate polishing solution |
| CN104947115A (en) * | 2015-07-27 | 2015-09-30 | 浙江湖磨抛光磨具制造有限公司 | Application method of environment-friendly metal polishing solution |
| CN108192506A (en) * | 2018-02-09 | 2018-06-22 | 东莞华拓研磨材料有限公司 | A kind of metal surface grinding with polishing agent and preparation method |
| CN109732438A (en) * | 2019-01-24 | 2019-05-10 | 泉州市友腾光电科技有限公司 | A kind of good miniature stick mirror plane ring polishing apparatus of polishing effect |
| CN111364042A (en) * | 2020-04-29 | 2020-07-03 | 湖南华耀百奥医疗科技有限公司 | Environment-friendly grinding and polishing solution |
| CN113755099A (en) * | 2020-05-27 | 2021-12-07 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
-
2006
- 2006-06-23 CN CN 200610014412 patent/CN101092540A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102010658A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Preparation method of chemical and mechanical polishing liquid of tungsten-molybdenum alloy material |
| CN102010670A (en) * | 2010-07-21 | 2011-04-13 | 天津晶岭微电子材料有限公司 | Preparation method of high-concentration Ti barrier layer surface chemically-mechanical polishing solution |
| CN102020975A (en) * | 2010-07-21 | 2011-04-20 | 天津晶岭微电子材料有限公司 | Preparation method of magnesium aluminum alloy surface chemically mechanical polishing solution |
| CN102010670B (en) * | 2010-07-21 | 2013-03-06 | 天津晶岭微电子材料有限公司 | Preparation method of high-concentration Ti barrier layer surface chemically-mechanical polishing solution |
| CN102010658B (en) * | 2010-07-21 | 2013-06-05 | 天津晶岭微电子材料有限公司 | Preparation method of chemical and mechanical polishing liquid of tungsten-molybdenum alloy material |
| CN104109481A (en) * | 2014-06-26 | 2014-10-22 | 河北宇天昊远纳米材料有限公司 | Preparation method of sapphire substrate polishing solution |
| CN104947115A (en) * | 2015-07-27 | 2015-09-30 | 浙江湖磨抛光磨具制造有限公司 | Application method of environment-friendly metal polishing solution |
| CN104947115B (en) * | 2015-07-27 | 2018-08-28 | 浙江湖磨抛光磨具制造有限公司 | A kind of application method of environment-friendly metal polishing fluid |
| CN108192506A (en) * | 2018-02-09 | 2018-06-22 | 东莞华拓研磨材料有限公司 | A kind of metal surface grinding with polishing agent and preparation method |
| CN109732438A (en) * | 2019-01-24 | 2019-05-10 | 泉州市友腾光电科技有限公司 | A kind of good miniature stick mirror plane ring polishing apparatus of polishing effect |
| CN111364042A (en) * | 2020-04-29 | 2020-07-03 | 湖南华耀百奥医疗科技有限公司 | Environment-friendly grinding and polishing solution |
| CN113755099A (en) * | 2020-05-27 | 2021-12-07 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
| CN113755099B (en) * | 2020-05-27 | 2022-07-12 | 万华化学集团电子材料有限公司 | Sapphire chemical mechanical polishing solution and application thereof |
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