CN101090109A - 带有相互电绝缘的连接元件的功率半导体模块 - Google Patents
带有相互电绝缘的连接元件的功率半导体模块 Download PDFInfo
- Publication number
- CN101090109A CN101090109A CNA2007101103876A CN200710110387A CN101090109A CN 101090109 A CN101090109 A CN 101090109A CN A2007101103876 A CNA2007101103876 A CN A2007101103876A CN 200710110387 A CN200710110387 A CN 200710110387A CN 101090109 A CN101090109 A CN 101090109A
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- semiconductor modular
- matrix
- load connecting
- connecting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Rectifiers (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
本发明描述一种用来装在冷却构件上的功率半导体模块,它具有至少一个基体、至少两个安装在基体上的功率半导体构件、一壳体和向外引出的负载连接元件和控制连接元件。其中基体具有一绝缘材料体,并在其朝向功率半导体模块内部的第一主平面上设有带负载电位的印制导线。负载连接元件分别设计成带有由一带状段组成的外接触机构和带有由它出发的内接触机构的金属成形体。内接触机构从带状段伸展到基体,并按线路与它导电接通。此外负载连接元件除内、外接触机构区域外完全被绝缘材料包裹,并因此相互电绝缘。
Description
技术领域
本发明介绍一种用来安装在冷却构件上的压力接触结构的功率半导体模块。例如由DE1971970A1所知的功率半导体模块是本发明的出发点。
背景技术
按照现有技术这种功率半导体模块由一带有至少一个设置在它里面的尤其是用来直接安装在一冷却构件上的电绝缘基体的壳体组成。该基体本身由一带有许多位于它上面的相互绝缘的金属连接轨线和位于它上面并与这些连接轨线按线路连接的功率半导体构件的绝缘材料体组成。此外已知功率半导体模块具有用于外部负载和辅助接头以及设置在内部的连接件的连接元件。这些用于在功率半导体模块内部按线路的连接的连接件大多设计成引线连接。
同样还知道一些压力接触功率半导体模导体模块,如其由DE4237632A1、DE19903875A1或DE10127947C1所知。在所述的第一份文献中压力装置具有一稳固的尤其是用来建立压力的金属加压元件、一用来储存压力的弹性衬垫元件和一用来将压力传到基体表面单独区域上的桥接元件。桥接元件尤其设计成一具有朝向衬垫元件的表面的塑料成形体,从该表面上伸出许多朝向基体表面方向的压紧爪。
借助于这种加压装置将基体压紧在一冷却构件上,从而在基体和冷却构件之间持续可靠地建立热传递。这里弹性衬垫元件用来在不同热负荷和在功率半导体模块的整个寿命周期内保持恒定的压紧状态。
DE19903875A1这样改进已知加压元件,使它一方面具有特别有利的重量和稳定性之比,另一方面具有电绝缘的引线。为此加压元件设计成一具有位于内部的金属芯部的塑料成形体。该金属芯部具有用于连接元件尤其是弹簧触点结构的辅助连接元件穿过的孔。塑料成形体这样包围这些孔,使得辅助连接元件借助于塑料成形体与金属芯部电绝缘。
还已知改进的在其朝向基体的表面上具有许多压紧指的加压元件。这里尤其是金属芯部还具有一预先调整好的弯曲量。通过这两种措施的组合这种加压元件可以提供上述加压装置的全部功能。
由DE10157947C1已知一种功率半导体模块,其中负载连接元件设计成这样,使它们按区段紧密相邻地垂直于基体表面分布,并具有从那里出发的内部接触机构、触脚,它们与印制导线建立导电接触,同时对基体施加压力,从而建立其与冷却构件的导热接触。这里压力用按现有技术的方法引入。
发明内容
本发明的目的是提供一种压力接触结构的功率半导体模块,其中改善功率半导体模块的内绝缘并简化压力接触结构的形成。
按照本发明这个目的通过权利要求1特征的措施实现。优选实施形式在从属权利要求中叙述。
本发明的构想从功率半导体模块按压力接触结构设置在冷却构件上出发,它具有至少一个基体、至少两个安装在它上面的功率半导体构件例如二极晶体管、一个壳体和向外引出的负载和控制连接元件。基体本身具有一绝缘材料体,并在其朝向功率半导体模块内部的第一主平面上具有带负载电位的印制导线。此外基体最好还具有至少一个带控制电位的印制导线,以控制功率半导体构件。
其次功率半导体模块还具有分别做成带内、外接触机构和一带状段的金属成形体的负载连接元件。各个负载连接元件相应的带状段最好平行于基体表面并离它一定距离设置。从带状段出发的内接触机构伸展到基体,并在那里按线路形成负载接头的触点。为此它们尤其是在基体上与带负载电位的印制导线触点接通,作为另一种选择直接与功率半导体构件触点接通。
按本发明负载连接元件40、42、44具有一带绝缘材料的外壳。负载连接元件除内外接触机构区域外最好完全用这种绝缘材料包裹,同时由此相互电绝缘。此外如果包裹的负载连接元件形成一个堆叠叠,从而是一个加工单元,则特别优选。
附图说明
借助于图1至3的实施例详细说明本发明的方案。
图1表示一按现有技术的功率半导体模块的剖视图。
图2表示一按本发明的功率半导体模块的剖视图。
图3用立体图表示一由本发明的功率半导体模块的负载连接元件组成的堆叠。
具体实施方式
图1表示一按现有技术的功率半导体模块1的剖视图。该功率半导体模块1具有一带框形壳体部分的壳体3。其中框形壳体部分包围至少一个基体5。它又具有一绝缘材料体52,尤其是一绝缘陶瓷,如氧化铝或氮化铝。
在朝向功率半导体模块1内部的第一主平面上基体5具有一形成构造的金属涂层。这里尤其是设计成铜涂层的金属涂层的各个段构成功率半导体模块1的印制导线54。按照现有技术基体5的第二主平面具有不形成构造的铜涂层56。
在基体5的印制导线54上设置可控和/或不可控的功率半导体构件60,例如分别带非并联的自振荡二极管的IGBTs(绝缘栅双极晶体管),或MOS-FETs。它们按线路与其他导线轨线54,例如借助于引线接合连接装置62连接。
用于在功率半导体模块内出现的不同电位的负载连接元件40,42,44用于在功率半导体模块1内部的功率电子线路的外部连接。为此负载连接元件40、42、44做成金属成形体,它们分别具有平行于基体表面的带状段402、422、442。这里这些带状段402、422、442形成一个堆叠,其中各个负载连接元件40、42、44的带状段仅仅通过必要的绝缘层46,例如以塑料薄膜的形式,相互隔开一定距离。这种塑料薄膜分别设置在相邻连接元件之间,以保证连接元件不同电位的导电隔离。出于清楚的原因在这个剖视图中未画出必要的辅助连接元件。
其次功率半导体模块1具有一设计成绝缘材料成形体的在负载连接元件40,42,44的带状段402、422、442堆叠和基体5之间的中间层。在所示结构中这个绝缘材料成形体30借助于卡扣-卡锁连接机构90安装在框形壳体3内。
缘绝材料成形体30本身具有用于负载连接元件40、42、44的内部触点这里是触脚400,420,440穿过的孔32。如果这些孔32设计成用于这些触脚400,420,440的导向装置,由此改进负载连接元件40,42,44相对于基体5或其印制导线54的定位,则特别优选。
用于功率半导体模块1和冷却构件2导热连接和同时使负载连接元件40,42,44与基体5的印制导线54触点接通的加压装置70例如由一用来建立压力的压紧元件以及用来储存压力的弹性衬垫元件构成。压力通过衬垫元件传到由负载连接元件40,42,44的带状段402,422,442组成的堆叠(stapel)上,从而向触脚400,420,440施加压力。因此使它们与基体5的印制导线导电连接。
这种压力接触装置70证明在功率半导体模块1的寿命周期内是接触特别可靠的。其次对于压力导电接通有利的是绝缘材料成形体30的孔32做成导向装置,因为由此使触脚400,420,440的定位特别精确。
压紧元件例如做成带有合适的位于内部的金属芯部的塑料成形体,其中这里也可以不用储存压力的衬垫元件。此外如果压紧元件同时形成功率半导体模块1的盖板是有利的。
图2表示本发明功率半导体模块1的剖视图。在这个举例性的结构中基体5、壳体3和加压机构70按上述现有技术设计,其中由此本发明不局限于这种结构,特别是功率半导体模块的按压力接触结构的方案。
负载连接元件40,42,44的金属成形体的结构同样相应于现有技术。与此相比这里负载连接元件40,42,44按照本发明这样改进,即它们具有带绝缘材料的外壳408,428,448。它近似于完全包围相应的负载连接元件40,42,44。外壳留空缺的部位是接触机构400,420,440部分,例如通向基体5的印制导线64的部分。
当然通过这种按本发明的负载连接元件40,42,44的结构可以不再在负载连接元件之间设置塑料薄膜。由此在第一步中简化功率半导体模块1的结构。如果负载连接元件40,42,44在带状段402,422,442区域内形成堆叠4,那么得到这个结构的进一步简化。这例如可以通过各个已经用绝缘材料包裹的负载连接元件40,42,44的粘接进行。如果多个负载连接元件40,42,44在一个工步中用绝缘材料包裹,也可能是特别有利的。
图3以立体图表示由本发明功率半导体模块的负载连接元件40,42,44组成的堆叠4。表示了分别具有许多内接触机构、触脚400,420,440的负载连接元件40,42,44,它们从对应的带状段402、422、442出发,并且这里按线路与两个并联的基体5导电接通。负载连接元件40,42,44的其他在外部的接触机构404,424,444构成功率半导体模块的外部接头。
在这种结构中负载连接元件40,42,44近似于完全被绝缘材料400,420,440包围。不包裹的部位是通向基体5的印制导线54的接触机构400,420,440部分以及用于功率半导体模块外部电连接的外接触机构404,424,444。
对于负载连接元件40,42,44通向基体5印制导线54的触脚400,420,440,仅仅与印制导线54的接触面不用绝缘材料覆盖可能是有利的。如这里所示,触脚400,420,440从基体表面出发延伸的一段不被包裹,也可能是有利的。在这个区域内绝缘层不是非要不可的,或者例如可以由一种设置在功率半导体模块内部的尤其是由硅树脂凝胶组成的浇注材料形成。
用于外部导电接通的外接触机构404,424,444至少在用于导电连接的相应接触面上不被包裹。这里外壳也可以从相应的接触面出发向相应的带状段402、422、442方向留出空缺。外壳408,428,448的具体结构取决于对负载连接元件40,42,44相互的绝缘性的相应要求以及功率半导体模块的几何结构,例如其壳体形状。
如果各个负载连接元件40,42,44的相应外壳408,428,448借助于喷涂或浸渍法形成,则特别有利。作为对于绝缘材料本身,例如以聚酰胺为基的热塑性塑料的要求,具有大于400,最好大于600的CTI一值的耐泄漏电流稳定性证明是特别合适的。
如果负载连接元件40,42,44优选在带状段402,422,442区域内连接成一装配单元,同样特别有利。这例如可以通过各个用绝缘材料408,428,448包裹的负载连接元件40,42,44的粘接连接形成。
此外相应的负载连接元件40,42,44或由此构成的负载连接元件40,42,44的堆叠4优选在带状段402,422,442区域内具有孔406,426,446。这些孔406,426,446设计成用于最好做成螺旋弹簧的、未画出的辅助连接元件穿过。这里当然所形成的孔406,426,446的边缘同样用绝缘材料408,428,448包裹。
但是也可能优选的是,在一个共同的方法步骤中用绝缘材料包裹许多的、有利的是全部的负载连接元件40、42、44。由此形成一个待特别有利地加工的装配单元。
Claims (9)
1.用于安装在冷却构件(2)上的功率半导体模块(1),具有至少一个基体(5)、至少两个安装在基体上的功率半导体构件(60)、一个壳体(3)及向外引出的负载连接元件(40,42,44)和控制连接元件,其中基体(5)具有一绝缘材料体(52),并在其朝向功率半导体模块内部的第一主平面上设有带负载电位的印制导线(54),其中负载连接元件分别设计成带有由一带状段(402,422,442)组成的外接触机构(404,424,444)和带有由它出发的内接触机构(400,420,440)的金属成形体,内接触机构从带状段伸展到基体(5),并按线路与基体导电接通,并且负载连接元件(40,42,44)除内、外接触机构区域外完全被绝缘材料(408,428,448)包裹,并因此相互电绝缘。
2.按权利要求1的功率半导体模块(1),按压力接触结构包括一压紧装置(70)。
3.按权利要求1的功率半导体模块(1),其中绝缘材料(408,428,448)具有大于400的CTI值。
4.按权利要求1的功率半导体模块(1),其中绝缘材料(408,428,448)借助于浸渍法设置。
5.按权利要求1的功率半导体模块(1),其中绝缘材料(408,428,448)借助于喷涂法设置。
6.按权利要求1的功率半导体模块(1),其中负载连接元件(40,42,44)在带状段(402,422,442)区域内形成一堆叠(4)。
7.按权利要求5的功率半导体模块(1),其中堆叠(4)通过粘接形成。
8.按权利要求5的功率半导体模块(1),其中堆叠(4)通过同时在许多负载连接元件(40,42,44)上设置绝缘材料(408,428,448)形成。
9.按上述权利要求之任一项的功率半导体模块(1),其中压紧装置(70)和/或堆叠(4)具有用于穿过设计成螺旋弹簧的辅助连接元件的孔(406,426,446,466)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006027481.4 | 2006-06-14 | ||
DE102006027481A DE102006027481C5 (de) | 2006-06-14 | 2006-06-14 | Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101090109A true CN101090109A (zh) | 2007-12-19 |
CN101090109B CN101090109B (zh) | 2010-10-13 |
Family
ID=38373371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101103876A Active CN101090109B (zh) | 2006-06-14 | 2007-06-13 | 带有相互电绝缘的连接元件的功率半导体模块 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8338942B2 (zh) |
EP (1) | EP1868243B1 (zh) |
JP (1) | JP5118888B2 (zh) |
KR (1) | KR101068703B1 (zh) |
CN (1) | CN101090109B (zh) |
AT (1) | ATE417362T1 (zh) |
DE (2) | DE102006027481C5 (zh) |
DK (1) | DK1868243T3 (zh) |
ES (1) | ES2318808T3 (zh) |
PL (1) | PL1868243T3 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101635288A (zh) * | 2008-07-24 | 2010-01-27 | 赛米控电子股份有限公司 | 具有功率半导体模块和连接装置的*** |
CN101996968A (zh) * | 2009-08-12 | 2011-03-30 | 赛米控电子股份有限公司 | 带电路载体和负载连接件的功率半导体模块及其制造方法 |
CN102157457A (zh) * | 2009-12-05 | 2011-08-17 | 赛米控电子股份有限公司 | 具有部分带状负载接头元件的压力接触的功率半导体模块 |
CN102446866A (zh) * | 2010-10-01 | 2012-05-09 | 赛米控电子股份有限公司 | 带有基础模块和连接模块的功率半导体模块 |
CN103794604A (zh) * | 2012-10-31 | 2014-05-14 | 三星电机株式会社 | 一体式功率半导体模块 |
CN108010891A (zh) * | 2016-11-02 | 2018-05-08 | 株洲中车时代电气股份有限公司 | 功率半导体模块 |
CN110534493A (zh) * | 2018-05-25 | 2019-12-03 | 赛米控电子股份有限公司 | 具有塑料模制件和负载端子元件的模块和功率半导体器件 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4572247B2 (ja) * | 2008-06-02 | 2010-11-04 | 本田技研工業株式会社 | ハイブリッド車両 |
US7952856B2 (en) | 2008-06-02 | 2011-05-31 | Honda Motor Co., Ltd. | Power control unit and hybrid vehicle comprising same |
DE102009000094A1 (de) * | 2009-01-09 | 2010-07-15 | Robert Bosch Gmbh | Tank zur Aufnahme einer wässrigen Lösung |
DE102009057146B4 (de) * | 2009-12-05 | 2013-09-26 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul mit Hybriddruckspeicher |
US8637981B2 (en) * | 2011-03-30 | 2014-01-28 | International Rectifier Corporation | Dual compartment semiconductor package with temperature sensor |
WO2014090685A1 (de) | 2012-12-10 | 2014-06-19 | Abb Technology Ag | Leistungshalbleitermodul und kontaktierungsanordnung |
WO2015187500A1 (en) * | 2014-06-02 | 2015-12-10 | Enphase Energy, Inc. | Ungrounded inverter enclosure and cabling |
CN105742252B (zh) * | 2014-12-09 | 2019-05-07 | 台达电子工业股份有限公司 | 一种功率模块及其制造方法 |
EP3104507A1 (en) | 2015-06-12 | 2016-12-14 | ABB Technology AG | Terminal arrangement for a power semiconductor module |
US10283447B1 (en) | 2017-10-26 | 2019-05-07 | Infineon Technologies Ag | Power semiconductor module with partially coated power terminals and method of manufacturing thereof |
DE102021205632A1 (de) | 2021-06-02 | 2022-12-08 | Zf Friedrichshafen Ag | Halbbrücke für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter |
DE102022207590A1 (de) | 2022-07-26 | 2024-02-01 | Zf Friedrichshafen Ag | Herstellungsoptimierte Leistungselektronik für einen Stromrichter mit oberseitig kontaktierbaren Leistungsanschlüssen |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4313128A (en) * | 1979-05-08 | 1982-01-26 | Westinghouse Electric Corp. | Compression bonded electronic device comprising a plurality of discrete semiconductor devices |
DE3538933A1 (de) * | 1985-11-02 | 1987-05-14 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
US5017859A (en) * | 1989-08-03 | 1991-05-21 | Westinghouse Electric Corp. | Integral capacitive divider bus bar voltage measuring apparatus and combined current sensor |
DE3937045A1 (de) * | 1989-11-07 | 1991-05-08 | Abb Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
DE4237632A1 (de) * | 1992-11-07 | 1994-05-11 | Export Contor Ausenhandelsgese | Schaltungsanordnung |
EP0597144A1 (de) * | 1992-11-12 | 1994-05-18 | IXYS Semiconductor GmbH | Hybride leistungselektronische Anordnung |
JP3396566B2 (ja) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | 半導体装置 |
DE19617055C1 (de) * | 1996-04-29 | 1997-06-26 | Semikron Elektronik Gmbh | Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise |
US5811878A (en) * | 1996-07-09 | 1998-09-22 | Asea Brown Boveri Ag | High-power semiconductor module |
DE69726518T2 (de) * | 1996-09-06 | 2004-10-07 | Hitachi Ltd | Leistungshalbleiteranordnung in modularer Bauart |
DE19719703C5 (de) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
DE19903875C2 (de) * | 1999-02-01 | 2001-11-29 | Semikron Elektronik Gmbh | Leistungshalbleiterschaltungsanordnung, insbesondere Stromumrichter, in Druckkontaktierung |
JP3692906B2 (ja) * | 2000-05-25 | 2005-09-07 | 日産自動車株式会社 | 電力配線構造及び半導体装置 |
DE10127947C1 (de) * | 2001-08-22 | 2002-10-17 | Semikron Elektronik Gmbh | Schaltungsanordnung |
DE10316355C5 (de) * | 2003-04-10 | 2008-03-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung |
DE102004021122B4 (de) * | 2004-04-29 | 2007-10-11 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102005024900B4 (de) * | 2004-06-08 | 2012-08-16 | Fuji Electric Co., Ltd. | Leistungsmodul |
DE102004051039B4 (de) * | 2004-10-20 | 2008-06-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Druckkontakteinrichtung |
JP2007251076A (ja) * | 2006-03-20 | 2007-09-27 | Hitachi Ltd | パワー半導体モジュール |
-
2006
- 2006-06-14 DE DE102006027481A patent/DE102006027481C5/de active Active
-
2007
- 2007-05-24 JP JP2007138030A patent/JP5118888B2/ja active Active
- 2007-06-07 KR KR1020070055352A patent/KR101068703B1/ko active IP Right Grant
- 2007-06-13 AT AT07011532T patent/ATE417362T1/de not_active IP Right Cessation
- 2007-06-13 ES ES07011532T patent/ES2318808T3/es active Active
- 2007-06-13 EP EP07011532A patent/EP1868243B1/de active Active
- 2007-06-13 DK DK07011532T patent/DK1868243T3/da active
- 2007-06-13 CN CN2007101103876A patent/CN101090109B/zh active Active
- 2007-06-13 DE DE502007000284T patent/DE502007000284D1/de active Active
- 2007-06-13 PL PL07011532T patent/PL1868243T3/pl unknown
- 2007-06-14 US US11/818,288 patent/US8338942B2/en active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101635288A (zh) * | 2008-07-24 | 2010-01-27 | 赛米控电子股份有限公司 | 具有功率半导体模块和连接装置的*** |
CN101635288B (zh) * | 2008-07-24 | 2013-08-28 | 赛米控电子股份有限公司 | 具有功率半导体模块和连接装置的*** |
CN101996968A (zh) * | 2009-08-12 | 2011-03-30 | 赛米控电子股份有限公司 | 带电路载体和负载连接件的功率半导体模块及其制造方法 |
CN101996968B (zh) * | 2009-08-12 | 2015-08-19 | 赛米控电子股份有限公司 | 带电路载体和负载连接件的功率半导体模块及其制造方法 |
CN102157457B (zh) * | 2009-12-05 | 2015-04-29 | 赛米控电子股份有限公司 | 具有部分带状负载接头元件的压力接触的功率半导体模块 |
CN102157457A (zh) * | 2009-12-05 | 2011-08-17 | 赛米控电子股份有限公司 | 具有部分带状负载接头元件的压力接触的功率半导体模块 |
CN102446866A (zh) * | 2010-10-01 | 2012-05-09 | 赛米控电子股份有限公司 | 带有基础模块和连接模块的功率半导体模块 |
CN103794604A (zh) * | 2012-10-31 | 2014-05-14 | 三星电机株式会社 | 一体式功率半导体模块 |
US9455207B2 (en) | 2012-10-31 | 2016-09-27 | Samsung Electro-Mechanics Co., Ltd. | All-in-one power semiconductor module |
CN108010891A (zh) * | 2016-11-02 | 2018-05-08 | 株洲中车时代电气股份有限公司 | 功率半导体模块 |
CN108010891B (zh) * | 2016-11-02 | 2020-03-17 | 株洲中车时代电气股份有限公司 | 功率半导体模块 |
CN110534493A (zh) * | 2018-05-25 | 2019-12-03 | 赛米控电子股份有限公司 | 具有塑料模制件和负载端子元件的模块和功率半导体器件 |
CN110534493B (zh) * | 2018-05-25 | 2024-04-09 | 赛米控电子股份有限公司 | 具有塑料模制件和负载端子元件的模块和功率半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
US20080007918A1 (en) | 2008-01-10 |
CN101090109B (zh) | 2010-10-13 |
PL1868243T3 (pl) | 2009-05-29 |
US8338942B2 (en) | 2012-12-25 |
DE102006027481C5 (de) | 2012-11-08 |
KR20070119503A (ko) | 2007-12-20 |
DE102006027481A1 (de) | 2007-12-27 |
EP1868243A1 (de) | 2007-12-19 |
EP1868243B1 (de) | 2008-12-10 |
JP2007335858A (ja) | 2007-12-27 |
DK1868243T3 (da) | 2009-04-06 |
KR101068703B1 (ko) | 2011-09-28 |
JP5118888B2 (ja) | 2013-01-16 |
ATE417362T1 (de) | 2008-12-15 |
ES2318808T3 (es) | 2009-05-01 |
DE102006027481B4 (de) | 2010-12-23 |
DE502007000284D1 (de) | 2009-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101090109B (zh) | 带有相互电绝缘的连接元件的功率半导体模块 | |
KR101204630B1 (ko) | 가압 접촉식 전력 반도체 모듈 | |
KR101238542B1 (ko) | 전력 반도체 모듈 및 이에 대한 제조 방법 | |
US8317525B2 (en) | Press-fit connections for electronic modules | |
CN101364679B (zh) | 电连接组件 | |
CN100517696C (zh) | 具有半导体元件、绝缘基板和金属电极的半导体器件 | |
US8183094B2 (en) | Method of manufacturing a semiconductor device having a semiconductor chip and resin sealing portion | |
CN102017135B (zh) | 带有在多个接触平面中的元器件的基板电路模块 | |
JP5291872B2 (ja) | 絶縁中間層を備えたパワー半導体モジュールの製造方法 | |
KR19980073412A (ko) | 버틈 리드 패키지 | |
US10319704B2 (en) | Semiconductor module | |
JP4940146B2 (ja) | 圧電積層体、および圧電積層体を接触接続する方法 | |
CN101996968A (zh) | 带电路载体和负载连接件的功率半导体模块及其制造方法 | |
CN104103611A (zh) | 加压加热接合结构及加压加热接合方法 | |
CN102956509A (zh) | 功率器件和封装该功率器件的方法 | |
JP5238198B2 (ja) | パワー半導体素子及びコンタクト装置を有する装置 | |
US20170194296A1 (en) | Semiconductor module | |
CN104067388A (zh) | 带散热鳍片的半导体模块 | |
CN101261987B (zh) | 电子部件安装板 | |
CN108702841A (zh) | 电子控制单元的电路 | |
CN101388369B (zh) | 压力接触的三相整流器模块 | |
CN211350619U (zh) | 双面散热功率模块 | |
CN108010891B (zh) | 功率半导体模块 | |
CN212907709U (zh) | 二极管器件结构 | |
CN106449526A (zh) | 具有改善的密封的功率半导体模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |