CN101090082A - Multifunction bonding device for semiconductor chip - Google Patents
Multifunction bonding device for semiconductor chip Download PDFInfo
- Publication number
- CN101090082A CN101090082A CN 200610082853 CN200610082853A CN101090082A CN 101090082 A CN101090082 A CN 101090082A CN 200610082853 CN200610082853 CN 200610082853 CN 200610082853 A CN200610082853 A CN 200610082853A CN 101090082 A CN101090082 A CN 101090082A
- Authority
- CN
- China
- Prior art keywords
- bonding
- chamber
- atmosphere
- bonding chamber
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
This invention relates to a binding device of multifunction semiconductor wafers including a binding cavity chamber mounted with a lower pressure head at the lower part of the chamber, a pumping device is connected with the binding cavity chamber to control a pump set to pump the chamber and monitor the vacuum degree of the chamber timely, a heating device is placed in the chamber to heat it to a designed temperature and keep it at a certain sphere by a feed back device and monitor temperature of the chamber, a gas atmosphere changing device is connected with the chamber to change the atmosphere to vacuum, nitrogen, hydrogen or a mixed atmosphere of nitrogen and hydrogen and a force applying device is placed at any side of the chamber to apply force to the semiconductor wafer in the chamber and monitor the pressure applied on the wafer timely.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the bonding device for semiconductor chip in the semiconductor wafer bonding techniques.
Background technology
The wafer of two surfacing cleanings can mutually combine by the chemical bond on surface under certain conditions, and is not subjected to the lattice of two kinds of wafer materials, the restriction in crystal orientation, Here it is wafer bonding techniques.Utilize bonding techniques combination new construction material that the great degree of freedom is arranged, so be widely used in microelectronic circuit, transducer, power device, micromachined, opto-electronic device, insulating properties silicon wafer fields such as (SOI).Wafer bonding techniques has become a kind of technology that can be used for making a lot of important opto-electronic devices.Wafer bonding techniques needs special-purpose wafer bonding apparatus to realize.
In the semiconductor wafer bonding process, wafer bonding apparatus need be finished following function: the adjusting of vacuum, bonding pressure, heating and temperature control and chamber atmosphere.Principle from wafer bonding, high vacuum is in order to satisfy the demand of vacuum wafer bonding, gas molecule quantity in the high vacuum environment seldom, the contamination that the para-linkage wafer surface is brought is little, and help being adsorbed in the molecule desorption of wafer surface under the high vacuum state, improve the activity of wafer surface, help the raising of wafer bonding energy.Because the wafer of bonding has certain fluctuating, can not be desirable plane, in order to increase the contact area between the bonding wafer surface so that the carrying out of bonding and expansion need the para-linkage wafer to certain pressure is provided.And under same annealing conditions, bonding pressure is big more to be easy to realize wafer bonding more.But bonding pressure might make that again the wafer of bonding forms crackle to the surface too greatly, therefore needs the application of force scope of accurate control bonding.Heating and temperature control part can realize high stress relief annealed function, owing to be in the high vacuum environment, gas is thin, the mode of heating heats of convection current is not obvious, usually the mode of heating that adopts all is that distributing on the application of force pressure head of the exerting pressure molybdenum sheet or the resistance wire of evenly heating provides uniform heating, temperature control and monitoring function are partly finished in temperature control, realize control and monitoring to intensification, constant temperature and the cooling of vacuum chamber, thus for bonding wafer to vacuum annealing is provided.It is to assign to provide nitrogen or hydrogen gas to chamber by inflation and exhaust control part that chamber atmosphere is regulated, to realize the wafer bonding annealing process under nitrogen or the atmosphere of hydrogen.
Existing wafer bonding equipment only carries out vacuum wafer bonding, nitrogen atmosphere bonding or atmosphere of hydrogen bonding at a kind of semi-conducting material, bonding under the different condition needs specialized apparatus, autgmentability is poor, not only bad for the wafer bonding under the different condition is compared, and the experiment of the bonding under the different condition needs different equipment.
Summary of the invention
The purpose of this invention is to provide a kind of multifunction bonding device for semiconductor chip, bonding apparatus utilance in the prior art is low to solve, the defective of autgmentability difference.
For achieving the above object, the present invention proposes a kind of multifunction bonding device for semiconductor chip, comprise bonding chamber, vacuum extractor, heater, atmosphere modifier and force application apparatus, it is characterized in that, wherein:
This bonding chamber provides bonding required clean room, and the bottom in the middle of this bonding chamber is equipped with a push-down head;
Vacuum extractor, this vacuum extractor is connected with the bonding chamber, and control vacuum pump unit para-linkage chamber vacuumizes, and monitors the vacuum degree of bonding chamber in real time;
Heater, this heater is positioned at the bonding chamber, and the para-linkage chamber is heated to the temperature of setting, and the temperature that keeps the bonding chamber by feedback device is within the specific limits, and can monitor the temperature of bonding chamber in real time;
The atmosphere modifier, this atmosphere modifier is connected with the bonding chamber, and the atmosphere that changes the bonding chamber is respectively vacuum, nitrogen atmosphere, atmosphere of hydrogen or nitrogen hydrogen and mixes atmosphere;
Force application apparatus, this force application apparatus is positioned at the either side of bonding chamber, for the semiconductor wafer in the bonding chamber is exerted pressure, and can monitor applied pressure on the bonding wafer in real time.
Wherein force application apparatus comprises:
One application of force cylinder;
One transmission device, this transmission device one end is connected with application of force cylinder, and the other end connects a seaming chuck, and this seaming chuck extend in the bonding chamber, and the push-down head in this seaming chuck and the bonding chamber is relative;
One differential manometer, this differential manometer is connected with application of force cylinder;
One application of force adjusting device, this application of force adjusting device is connected with application of force cylinder.
The outer wall of the wherein said bonding chamber cyclic water jacket that is cooled surrounds, and avoids bonding chamber high temperature to damage by the cooling circulating water of constant temperature.
Wherein heater is that axial symmetry is distributed in the bonding chamber.
The beneficial effect of technical solution of the present invention is: in a cover wafer bonding apparatus, can realize respectively that vacuum wafer bonding, nitrogen atmosphere wafer bonding, atmosphere of hydrogen wafer bonding and nitrogen hydrogen mix the atmosphere wafer bonding, reduce cost, expanded the function of wafer bonding equipment.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the wafer bonding system schematic;
Multiple-function chip bonding system vacuum degree variation diagram when Fig. 2 is the vacuum wafer bonding;
Multiple-function chip bonding system temperature variation when Fig. 3 is the vacuum wafer bonding;
Multiple-function chip bonding system pressure differential variation diagram when Fig. 4 is the vacuum wafer bonding;
Fig. 5 is the infrared transmission image of the semiconductor wafer vacuum bonding of multiple-function chip bonding system realization;
Multiple-function chip bonding system vacuum degree variation diagram when Fig. 6 is the nitrogen atmosphere wafer bonding;
Multiple-function chip bonding system temperature variation when Fig. 7 is the nitrogen atmosphere wafer bonding;
Multiple-function chip bonding system pressure differential variation diagram when Fig. 8 is the nitrogen atmosphere wafer bonding;
Fig. 9 is the infrared transmission image of the semiconductor wafer nitrogen atmosphere wafer bonding of multiple-function chip bonding system realization;
Multiple-function chip bonding system vacuum degree variation diagram when Figure 10 is the atmosphere of hydrogen wafer bonding;
Multiple-function chip bonding system temperature variation when Figure 11 is the atmosphere of hydrogen wafer bonding;
Multiple-function chip bonding system pressure differential variation diagram when Figure 12 is the atmosphere of hydrogen wafer bonding;
Figure 13 is the infrared transmission image of the semiconductor wafer atmosphere of hydrogen wafer bonding of multiple-function chip bonding system realization.
Embodiment
Following the present invention will be in conjunction with the accompanying drawings, and optimum implementation of the present invention is described in detail.
See also shown in Figure 1ly, a kind of multifunction bonding device for semiconductor chip of the present invention comprises bonding chamber 10, vacuum extractor 20, heater 30, atmosphere modifier 40 and force application apparatus 50, it is characterized in that, wherein:
This bonding chamber 10 provides bonding required clean room, and the bottom in the middle of this bonding chamber 10 is equipped with a push-down head 12; Be cooled cyclic water jacket 11 of the outer wall of wherein said bonding chamber 10 surrounds, and avoids bonding chamber high temperature to damage by the cooling circulating water of constant temperature;
Heater 30, this heater 30 is positioned at bonding chamber 10, and para-linkage chamber 10 is heated to the temperature of setting, and the temperature that keeps bonding chamber 10 by feedback device is within the specific limits, and can monitor the temperature of bonding chamber 10 in real time; Wherein heater 30 is that axial symmetry is distributed in the bonding chamber 10;
Wherein force application apparatus 50 comprises:
One application of force cylinder 51;
One transmission device 52, these transmission device 52 1 ends are connected with application of force cylinder 51, and the other end connects a seaming chuck 521, and this seaming chuck 521 extend in the bonding chamber 10, and the push-down head 12 in this seaming chuck 521 and the bonding chamber 10 is relative;
One differential manometer 53, this differential manometer 53 is connected with application of force cylinder 51;
One application of force adjusting device 54, this application of force adjusting device 54 is connected with application of force cylinder 51.
Please consult is a kind of multifunction bonding device for semiconductor chip as shown in Figure 1 again, bonding chamber 10 is vacuum-tight chambers, by vacuum extractor 20 its vacuum state is regulated, by the atmosphere of atmosphere modifier 40 change bonding chambers, realize that vacuum bonding, nitrogen atmosphere bonding, atmosphere of hydrogen bonding and nitrogen hydrogen mix the atmosphere bonding.Be cooled cyclic water jacket 11 of bonding chamber 10 surrounds, and avoids bonding chamber high temperature to damage by the cooling circulating water of constant temperature.Vacuum extractor 20 comprises vacuum pump, the pipeline that connects vacuum pump and bonding chamber and valve, compound vacuum gauge, and vacuum pump wherein comprises mechanical pump, molecular pump.
This cover multiple-function chip bonding apparatus vacuumizes, at normal temperatures by atmosphere to 5 * 10
-4Pa needs 60 minutes approximately; Complete machine leak rate≤5 * 10
-8Pam
3/ S; 700 ℃ of maximum temperatures, temperature homogeneity can remain on ± and 3 ℃; The application of force scope of force application apparatus is at 0～1350Kg.
In specific embodiment 1, will illustrate and utilize the multiple-function chip bonding apparatus to realize the vacuum wafer bonding.The course of work that multiple-function chip bonding apparatus of the present invention carries out the vacuum wafer bonding is as follows: the cooling circulating water that charges into low temperature for cool cycles water jacket 11; Cleaned semiconductor wafer is put on the push-down head 12 of bonding chamber 10 of described multifunction bonding device for semiconductor chip; It is poor that the application of force mechanical pump of the application of force regulatory function by bearing the application of force adjusting device 54 in the force application apparatus 50 is regulated the gas pressure intensity of application of force cylinder chamber about in the of 51 of force application apparatus 50, pressure difference wherein is applied to pressure differentials on the semiconductor wafer by pressure gage 53 monitoring in real time, and the pressure that transmission device 52 produces application of force cylinder 51 is applied on the semiconductor wafer on the push-down head 12 by seaming chuck 521; Regulate application of force mechanical pump, make the pressure that is applied to semiconductor wafer identical with set point; Close bonding chamber 10, vacuumize by vacuum extractor 20 para-linkage chambers 10; When the vacuum degree of bonding chamber 10 reaches required rank, 10 heating of heater 30 para-linkage chambers, and after temperature reaches set point, in the required time range of bonding, the temperature constant that keeps bonding chamber 10, and show the temperature of bonding chamber 10 by device for monitoring temperature; 10 coolings of para-linkage chamber when temperature is suitable with room temperature, are closed atmosphere modifier 40 and vacuum extractor 20; Reduce force application apparatus 50 applied pressures, leave semiconductor wafer on the push-down head 12 with seaming chuck 521 up to application of force transmission device 52; Open bonding chamber 10, the semiconductor wafer that bonding is good takes out bonding chamber 10.Fig. 2 is the variation schematic diagram of vacuum degree in the vacuum bonding process, Fig. 3 is a variations in temperature schematic diagram in the vacuum wafer bonding process, Fig. 4 is the variation schematic diagram that force application apparatus is applied to the pressure difference on the wafer in the vacuum wafer bonding process, Fig. 5 is the infrared transmission image of the semiconductor wafer vacuum bonding of wafer bonding system realization, this picture specification is with described multiple-function chip bonding apparatus, by the vacuum wafer bonding, can access bonding quality bonding wafer preferably.
In specific embodiment 2, the nitrogen atmosphere wafer bonding will be described.The course of work that multiple-function chip bonding apparatus of the present invention carries out the nitrogen atmosphere wafer bonding is as follows: the cooling circulating water that charges into low temperature for cool cycles water jacket 11; Cleaned semiconductor wafer is put on the push-down head 12 of bonding chamber 10 of described multifunction bonding device for semiconductor chip; The application of force mechanical pump of the application of force regulatory function by bearing the application of force adjusting device 54 in the force application apparatus 50 is regulated the draught head of application of force cylinder chamber about in the of 51 of force application apparatus 50, pressure difference wherein is applied to pressure differentials on the semiconductor wafer by pressure gage 53 monitoring in real time, and the pressure that transmission device 52 produces application of force cylinder 51 is applied on the semiconductor wafer on the push-down head 12 by seaming chuck 521; Regulate the application of force mechanical pump of application of force adjusting device 54, make the pressure that is applied to semiconductor wafer identical with set point; Close bonding chamber 10, the backing pump para-linkage chamber 10 by vacuum extractor 20 slightly vacuumizes; When the vacustat of bonding chamber 10, open the nitrogen adjustment valve door on the atmosphere modifier 40, for bonding chamber 10 feeds nitrogen, under nitrogen flow and vacuum extractor 20 actings in conjunction, make the vacustat of bonding chamber 10; 10 heating of heater 30 para-linkage chambers, and after temperature reaches set point, in the required time range of bonding, keep the temperature constant of bonding chamber 10, and show the temperature of bonding chamber 10 by device for monitoring temperature; 10 coolings of para-linkage chamber when temperature is suitable with room temperature, are closed atmosphere modifier 40, stop to charge into nitrogen, close vacuum extractor 20; Reduce force application apparatus 50 applied pressures, leave semiconductor wafer on the push-down head 12 up to application of force transmission device 52 and seaming chuck 521; Open bonding chamber 10, the semiconductor wafer that bonding is good takes out bonding chamber 10.
Wafer bonding apparatus vacuum degree variation diagram when Fig. 6 is the nitrogen atmosphere wafer bonding; Wafer bonding system temperature variation diagram when Fig. 7 is the nitrogen atmosphere wafer bonding; Wafer bonding apparatus pressure differential variation diagram when Fig. 8 is the nitrogen atmosphere wafer bonding; Fig. 9 is the infrared transmission image of the semiconductor wafer nitrogen atmosphere wafer bonding of multiple-function chip bonding apparatus realization, and this picture specification by the nitrogen atmosphere wafer bonding, can access bonding quality bonding wafer preferably with described multiple-function chip bonding apparatus.
In specific embodiment 3, the atmosphere of hydrogen wafer bonding will be described.The course of work that multiple-function chip bonding apparatus of the present invention carries out the atmosphere of hydrogen wafer bonding is as follows: the cooling circulating water that charges into low temperature for cool cycles water jacket 11; Cleaned semiconductor wafer is put on the push-down head 12 of bonding chamber 10 of described multifunction bonding device for semiconductor chip; The application of force mechanical pump of the application of force regulatory function by bearing the application of force adjusting device 54 in the force application apparatus 50 is regulated the draught head of application of force cylinder chamber about in the of 51 of force application apparatus 50, pressure difference wherein is applied to pressure differentials on the semiconductor wafer by pressure gage 53 monitoring in real time, and the pressure that transmission device 52 produces application of force cylinder 51 is applied on the semiconductor wafer on the push-down head 12 by seaming chuck 521; Regulate the application of force mechanical pump of application of force adjusting device 54, make the pressure that is applied to semiconductor wafer identical with set point; Close bonding chamber 10, the backing pump para-linkage chamber 10 by vacuum extractor 20 slightly vacuumizes; When the vacustat of bonding chamber 10, open the nitrogen adjustment valve door on the atmosphere modifier 40, for bonding chamber 10 feeds nitrogen, open the hydrogen regulating valve door on the atmosphere modifier 40 again, for bonding chamber 10 feeds hydrogen, under nitrogen, hydrogen and vacuum extractor 20 actings in conjunction, make the vacustat of bonding chamber 10, and keep bonding chamber 10 to be in a kind of atmosphere of nitrogen hydrogen gas mixture; 10 heating of heater 30 para-linkage chambers, and after temperature reaches set point, in the required time range of bonding, keep the temperature constant of bonding chamber 10, and show the temperature of bonding chamber 10 by device for monitoring temperature; 10 coolings of para-linkage chamber when temperature is suitable with room temperature, are closed atmosphere modifier 40, stop to charge into nitrogen, close vacuum extractor 20; Reduce force application apparatus 50 applied pressures, leave semiconductor wafer on the push-down head 12 up to application of force transmission device 52 and seaming chuck 521; Open bonding chamber 10, the semiconductor wafer that bonding is good takes out bonding chamber 10.Wherein, the purpose that charges into the nitrogen hydrogen mixed gas is in order to prevent the too high danger such as blast that may cause of hydrogen composition.
Wafer bonding system vacuum degree variation diagram when Figure 10 is the atmosphere of hydrogen wafer bonding; Wafer bonding system temperature variation diagram when Figure 11 is the atmosphere of hydrogen wafer bonding; Wafer bonding system pressure difference variation diagram when Figure 12 is the atmosphere of hydrogen wafer bonding; Figure 13 is the infrared transmission image of the semiconductor wafer atmosphere of hydrogen wafer bonding of multiple-function chip bonding system realization, and this picture specification by the atmosphere of hydrogen wafer bonding, can access bonding quality bonding wafer preferably with described multiple-function chip bonding apparatus.Because hydrogen is a kind of reducibility gas, therefore in bonding process, be easy to react, and extract the steam that interfacial reaction forms out the bonding wafer surface with the oxide of wafer surface remnants, therefore the removal for the bonded interface oxide has certain benefit.
By multiple-function chip bonding apparatus of the present invention, in same set of device, can realize the wafer bonding of different atmosphere atmosphere respectively, reduced research cost, expanded the purposes of wafer bonding equipment.
Claims (4)
1, a kind of multifunction bonding device for semiconductor chip comprises bonding chamber, vacuum extractor, heater, atmosphere modifier and force application apparatus, it is characterized in that, wherein:
This bonding chamber provides bonding required clean room, and the bottom in the middle of this bonding chamber is equipped with a push-down head;
Vacuum extractor, this vacuum extractor is connected with the bonding chamber, and control vacuum pump unit para-linkage chamber vacuumizes, and monitors the vacuum degree of bonding chamber in real time;
Heater, this heater is positioned at the bonding chamber, and the para-linkage chamber is heated to the temperature of setting, and the temperature that keeps the bonding chamber by feedback device is within the specific limits, and can monitor the temperature of bonding chamber in real time;
The atmosphere modifier, this atmosphere modifier is connected with the bonding chamber, and the atmosphere that changes the bonding chamber is respectively vacuum, nitrogen atmosphere, atmosphere of hydrogen or nitrogen hydrogen and mixes atmosphere;
Force application apparatus, this force application apparatus is positioned at the either side of bonding chamber, for the semiconductor wafer in the bonding chamber is exerted pressure, and can monitor applied pressure on the bonding wafer in real time.
2, multifunction bonding device for semiconductor chip according to claim 1 is characterized in that wherein force application apparatus comprises:
One application of force cylinder;
One transmission device, this transmission device one end is connected with application of force cylinder, and the other end connects a seaming chuck, and this seaming chuck extend in the bonding chamber, and the push-down head in this seaming chuck and the bonding chamber is relative;
One differential manometer, this differential manometer is connected with application of force cylinder;
One application of force adjusting device, this application of force adjusting device is connected with application of force cylinder.
3, multifunction bonding device for semiconductor chip according to claim 1 is characterized in that: the outer wall of the wherein said bonding chamber cyclic water jacket that is cooled surrounds, and avoids bonding chamber high temperature to damage by the cooling circulating water of constant temperature.
4, as multifunction bonding device for semiconductor chip as described in the claim 3, it is characterized in that: wherein heater is that axial symmetry is distributed in the bonding chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610082853 CN101090082A (en) | 2006-06-15 | 2006-06-15 | Multifunction bonding device for semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610082853 CN101090082A (en) | 2006-06-15 | 2006-06-15 | Multifunction bonding device for semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101090082A true CN101090082A (en) | 2007-12-19 |
Family
ID=38943348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610082853 Pending CN101090082A (en) | 2006-06-15 | 2006-06-15 | Multifunction bonding device for semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101090082A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101444873B (en) * | 2007-11-29 | 2012-07-11 | Smc株式会社 | Bonding method and apparatus therefor |
| CN102646620A (en) * | 2012-05-08 | 2012-08-22 | 中国科学院半导体研究所 | Uniform axial force applying device for graphical heterogeneous bonding of silicon-based III-V epitaxial material |
| CN103137509A (en) * | 2011-12-02 | 2013-06-05 | 上海微电子装备有限公司 | Device for wafer bonding and wafer bonding method |
| CN105405793A (en) * | 2015-12-08 | 2016-03-16 | 中国科学院半导体研究所 | Uniform axial force bearing sheet device |
| CN105428285A (en) * | 2010-06-22 | 2016-03-23 | 硅绝缘体技术有限公司 | Apparatus for manufacturing semiconductor devices |
| WO2017114315A1 (en) * | 2015-12-30 | 2017-07-06 | 上海微电子装备（集团）股份有限公司 | Heating and cooling apparatus for bonding machine and manufacturing method thereof |
| CN109065476A (en) * | 2018-07-26 | 2018-12-21 | 南通大学 | Vacuum bonding device |
| CN110401096A (en) * | 2018-04-24 | 2019-11-01 | 福州高意光学有限公司 | A kind of high efficiency A-O Q-switch device |
| CN112420882A (en) * | 2020-11-06 | 2021-02-26 | 河源市天和第三代半导体产业技术研究院 | Multi-chip bonding structure of LED semiconductor wafer |
| CN114512423A (en) * | 2022-01-25 | 2022-05-17 | 深圳市先进连接科技有限公司 | Hot-pressing bonding equipment for semiconductor packaging |
-
2006
- 2006-06-15 CN CN 200610082853 patent/CN101090082A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901465B2 (en) | 2007-11-29 | 2014-12-02 | Smc Kabushiki Kaisha | Bonding method and apparatus therefor |
| CN101444873B (en) * | 2007-11-29 | 2012-07-11 | Smc株式会社 | Bonding method and apparatus therefor |
| CN105428285A (en) * | 2010-06-22 | 2016-03-23 | 硅绝缘体技术有限公司 | Apparatus for manufacturing semiconductor devices |
| CN103137509A (en) * | 2011-12-02 | 2013-06-05 | 上海微电子装备有限公司 | Device for wafer bonding and wafer bonding method |
| CN102646620B (en) * | 2012-05-08 | 2015-02-18 | 中国科学院半导体研究所 | Uniform axial force applying device for graphical heterogeneous bonding of silicon-based III-V epitaxial material |
| CN102646620A (en) * | 2012-05-08 | 2012-08-22 | 中国科学院半导体研究所 | Uniform axial force applying device for graphical heterogeneous bonding of silicon-based III-V epitaxial material |
| CN105405793A (en) * | 2015-12-08 | 2016-03-16 | 中国科学院半导体研究所 | Uniform axial force bearing sheet device |
| WO2017114315A1 (en) * | 2015-12-30 | 2017-07-06 | 上海微电子装备（集团）股份有限公司 | Heating and cooling apparatus for bonding machine and manufacturing method thereof |
| CN110401096A (en) * | 2018-04-24 | 2019-11-01 | 福州高意光学有限公司 | A kind of high efficiency A-O Q-switch device |
| CN109065476A (en) * | 2018-07-26 | 2018-12-21 | 南通大学 | Vacuum bonding device |
| CN109065476B (en) * | 2018-07-26 | 2023-08-22 | 苏州锐杰微科技集团有限公司 | Vacuum bonding device |
| CN112420882A (en) * | 2020-11-06 | 2021-02-26 | 河源市天和第三代半导体产业技术研究院 | Multi-chip bonding structure of LED semiconductor wafer |
| CN112420882B (en) * | 2020-11-06 | 2021-09-10 | 河源市天和第三代半导体产业技术研究院 | Multi-chip bonding structure of LED semiconductor wafer |
| CN114512423A (en) * | 2022-01-25 | 2022-05-17 | 深圳市先进连接科技有限公司 | Hot-pressing bonding equipment for semiconductor packaging |
| CN114512423B (en) * | 2022-01-25 | 2022-08-16 | 深圳市先进连接科技有限公司 | Hot-pressing bonding equipment for semiconductor packaging |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101090082A (en) | Multifunction bonding device for semiconductor chip | |
| KR100968039B1 (en) | Aligning apparatus, bonding apparatus and aligning method | |
| US8210417B2 (en) | Bonding apparatus | |
| CN101371331B (en) | Magnetic annealing tool heat exchange system and processes | |
| KR102126367B1 (en) | In-vacuum high speed pre-chill and post-heat stations | |
| KR100508459B1 (en) | Electrostatic chucking stage and substrate processing apparatus | |
| CN111477569A (en) | Heating device in semiconductor equipment and semiconductor equipment | |
| CN101495311A (en) | A bonding plate mechanism for use in anodic bonding | |
| US20120091187A1 (en) | Bonding apparatus and bonding method | |
| CN105659371A (en) | Gas coupled probe for substrate temperature measurement | |
| CN102354673A (en) | Substrate temperature control method | |
| US11923231B2 (en) | Substrate table with vacuum channels grid | |
| KR20090018060A (en) | High temperature anodic bonding apparatus | |
| CN107123611A (en) | Semiconductor bond device and correlation technique | |
| KR980005399A (en) | Semiconductor device manufacturing apparatus, process condition control method of manufacturing apparatus and capacitor manufacturing method using same | |
| CN101847573B (en) | Temperature control method for heating apparatus | |
| CN102270566A (en) | Sealing device and method of reaction cavity | |
| CN101031527B (en) | Ceramic member and method of manufacturing the same, heater, placing mechanism, treatment apparatus | |
| CN210108579U (en) | Heating device for testing restraining restoring force of shape memory alloy | |
| CN103137509A (en) | Device for wafer bonding and wafer bonding method | |
| TW202124962A (en) | Multifunction testing system of multiple chips including a metallic carrier, a carrying seat, a pressing lid, two sets of fastening components, two temperature-controlled liquid conveying pipes, a pressurized air supply pipe and a steering mechanism | |
| CN109423697B (en) | Furnace door device for low-pressure diffusion furnace and low-pressure diffusion furnace | |
| KR100671485B1 (en) | Temperature maintenance System of Probe Card for Wafer Burn-In Test | |
| CN109671620A (en) | Impurity diffusion technology in semiconductor devices preparation process | |
| CN115116861A (en) | Plasma vacuum hot pressing bonding machine for semiconductor wafer surface bonding processing and bonding method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |