CN101063661B - Method for monitoring silicon monocrystal extension layer fault situation using micro-image region iterated logarithm measuring apparatus - Google Patents
Method for monitoring silicon monocrystal extension layer fault situation using micro-image region iterated logarithm measuring apparatus Download PDFInfo
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- CN101063661B CN101063661B CN200610026249A CN200610026249A CN101063661B CN 101063661 B CN101063661 B CN 101063661B CN 200610026249 A CN200610026249 A CN 200610026249A CN 200610026249 A CN200610026249 A CN 200610026249A CN 101063661 B CN101063661 B CN 101063661B
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Abstract
This invention discloses one method to monitor silicon single crystal extensive layer overlapping in the microscope area, which comprises the following steps: processing large volume of overlap labelon crystal slice surface and comparison slice; by use of overlap device to test the slice exposure definition in microscope area for overlap label to find out overlap cross.
Description
Technical field
The present invention relates to a kind of field that fault (Slip) is monitored, relate in particular to a kind of territory, little shadow zone that utilizes and change the method for measuring instrument monitoring silicon monocrystal extension fault (Slip) situation.
Background technology
Fault (Slip) is meant the displacement of a certain crystal rhegma, occurs departing from the growth of original lattice direction when being single crystal epitaxial (Epitaxial silicon) growth in some position.When the temperature of wafer raise rapidly, wafer will bear bigger temperature, pressure.In case the temperature in a certain zone is compared significantly hotlyyer or colder on the crystal with all the other zones, crystal just can go out to discharge too much temperature, pressure by fault (Slip).
In single crystal epitaxial (Epitaxial silicon) sample of no fault, lattice is the regularly arranged state (Fig. 1) that is crystal; In the single crystal epitaxial that fault (Slip) occur (Epitaxial silicon) sample, the lattice of deposited crystal can produce upper and lower displacement along with temperature, pressure, and the zone of this band can take place to distort generation fault (Slip) (Fig. 2).
Because the monocrystalline of deposition has only the 20000-30000 dust usually, has only by the Fourier infrared spectrum analyser just can detect.Shown in Figure 3 is the single crystal epitaxial sample of detected no fault (Slip), and Fig. 4 is the detected single crystal epitaxial sample that fault (Slip) occurs.
Detect at present the frequency of fault (Slip) on the epitaxial single crystal layer the chances are weekly, and want the Fourier infrared spectrum analyser to detect, more inconvenient is that measurement result can not quantize and can only artificially judge by macroscopical picture.
In sum, at present silicon single-crystal outer layer mistake (Slip) though the monitoring result of situation can provide macroscopical picture to us, but also need the operator artificially to judge simultaneously, can't feedback quantization information, can to measuring (Overlay) data unusual the jump be taken place owing to artificial error in judgement causes changing of back imaging layer, cause the loss that can't retrieve like this.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of quantifiable territory, little shadow zone that utilizes and repeatedly measuring instrument is carried out the method that fault detects.
For solving the problems of the technologies described above, the invention discloses a kind of territory, little shadow zone that utilizes repeatedly to the method for the situation of measuring instrument monitoring silicon monocrystal extension fault, it is characterized in that may further comprise the steps: etch contrast in advance with repeatedly to measuring mark in wafer surface to be detected; After wafer to be detected carries out the silicon single crystal epitaxial growth, wafer to be detected is defined changing to measuring mark when anterior layer in the exposure of little shadow zone; Utilize repeatedly measuring instrument to be measured two stacking to measuring mark, and carry out analog computation, thereby find out the fault position and its quantification.
The contrast that the present invention owing to utilize makes in advance in wafer surface to be detected with repeatedly to measuring mark, and with wafer to be measured the exposure of little shadow zone define when anterior layer repeatedly to measuring signature, make the fault that can quantize to detect plane of crystal and clear and definite its position.
Description of drawings
Fig. 1 is that the present invention utilizes territory, little shadow zone repeatedly to the synoptic diagram of measuring instrument monitoring silicon monocrystal epitaxial loayer fault (Slip), is the silicon single crystal extension sample of no fault (Slip);
Fig. 2 is that the present invention utilizes territory, little shadow zone to change to the synoptic diagram of measuring instrument monitoring silicon monocrystal epitaxial loayer fault (Slip), for the silicon single crystal extension sample of fault (Slip) occurring;
Fig. 3 is that the present invention utilizes territory, little shadow zone repeatedly measuring instrument monitoring silicon monocrystal extension to be utilized the silicon single crystal extension sample of the detected no fault of Fourier infrared spectrum analyser (Slip);
Fig. 4 is that the present invention utilizes territory, little shadow zone repeatedly measuring instrument monitoring silicon monocrystal extension to be utilized the detected silicon single crystal extension sample that fault (Slip) occurs of Fourier infrared spectrum analyser;
Fig. 5 is the principle simulation drawing that the present invention utilizes territory, little shadow zone repeatedly to change right to the territory, little shadow zone of measuring instrument monitoring silicon monocrystal extension;
Fig. 6 is that the present invention utilizes territory, little shadow zone repeatedly to the monitoring mark of the measuring instrument monitoring silicon monocrystal extension position view of arranging;
Fig. 7 be the present invention utilize territory, little shadow zone repeatedly to the application of measuring instrument monitoring silicon monocrystal extension repeatedly to the analysis software of measuring instrument (Overlay) draw in each the regional polar plot of wafer (Wafer) and the result of quantification.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
The present invention utilizes exactly repeatedly measuring instrument (Overlay) is measured the fault of being brought when a large amount of marks (mark) on the testing wafer (control wafer) detect precipitation single crystal epitaxial (deposition epitaxial silicon) (Slip).
And the fault that produces in the deposition process (Slip) is the irregular surface that appears at wafer (Wafer).The generation of these faults (Slip) will cause that wafer (Wafer) surfacial pattern produces geometric deformation.
So wafer (Wafer) surface is made in advance a large amount of repeatedly to measuring mark (Overlay box), shown in 0 layer of Fig. 6.
Growing silicon single crystal extension (epitaxial silicon) then, again the exposure of little shadow zone define when anterior layer repeatedly to measuring mark (Overlay box), shown in 1 layer of Fig. 6.Use at last and repeatedly measuring instrument (Overlay) is measured.Just can draw in certain zone of wafer (Wafer) whether have the fault (Slip) and the order of severity easily.
When fault (Slip) appearred in silicon single-crystal outer layer, the figure on fault (Slip) region surface also can be distorted, and as shown in Figure 5, was that 0 layer mark is twisted.After by one deck (being ground floor) design logo under the exposure of little shadow zone defines, defined that less mark can be formed on and 0 layer of corresponding position.Because 0 layer mark twists, thus these two marks repeatedly also can take place correspondingly to beat unusually to measured value.
Using the analysis software that changes to measuring instrument (Overlay) can draw easily in each the regional polar plot of wafer (Wafer) and the result of quantification.As shown in Figure 7.Details are as follows:
Little shadow zone (Photo) repeatedly to measuring instrument (Overlay) testing tool can detect by the relative distance that detects this two-layer sign this 2 layers repeatedly to situation.Make up mathematical model afterwards, what this was two-layer repeatedly just can be converted into the model data of quantification to measuring (Overlay) information, and can form polar plot.Utilize model data and polar plot just can judge fault (Slip) situation (Fig. 7) of silicon single-crystal outer layer like this.
Embodiment 1
The preparation of testing wafer
Testing wafer must define zero-mark before use, at first define 0 layer of mark at little shadow zone (Photo), and 0 layer of mark is etched in wafer (wafer) surface at etching region (Etch). depositing silicon single crystal epitaxial on preprepared testing wafer again when needs are monitored, then in little shadow zone with the ground floor tag definitions on testing wafer.
Claims (2)
1. one kind is utilized territory, little shadow zone repeatedly to the method for the situation of measuring instrument monitoring silicon monocrystal extension fault, it is characterized in that may further comprise the steps:
Etch contrast in advance with changing in wafer surface to be detected to measuring mark;
After described wafer to be detected carries out the silicon single crystal epitaxial growth, described wafer to be detected is defined changing to measuring mark when anterior layer in the exposure of little shadow zone;
Utilize repeatedly measuring instrument to be measured two stacking to measuring mark, and carry out analog computation, thereby find out the fault position and its quantification.
2. the territory, little shadow zone that utilizes according to claim 1 is repeatedly to the method for the situation of measuring instrument monitoring silicon monocrystal extension fault, and it is characterized in that: described contrast is with repeatedly measurement being labeled as more than 1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200610026249A CN101063661B (en) | 2006-04-29 | 2006-04-29 | Method for monitoring silicon monocrystal extension layer fault situation using micro-image region iterated logarithm measuring apparatus |
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| CN200610026249A CN101063661B (en) | 2006-04-29 | 2006-04-29 | Method for monitoring silicon monocrystal extension layer fault situation using micro-image region iterated logarithm measuring apparatus |
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| Publication Number | Publication Date |
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| CN101063661A CN101063661A (en) | 2007-10-31 |
| CN101063661B true CN101063661B (en) | 2010-05-12 |
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| CN101465306B (en) * | 2007-12-19 | 2010-10-06 | 上海华虹Nec电子有限公司 | Method for measuring distortion of epitaxial growth picture |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601379A (en) * | 2003-09-22 | 2005-03-30 | 南亚科技股份有限公司 | Method of mfg, wafer and method of evaluating overlapping alignment between light shade patterns |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1601379A (en) * | 2003-09-22 | 2005-03-30 | 南亚科技股份有限公司 | Method of mfg, wafer and method of evaluating overlapping alignment between light shade patterns |
Non-Patent Citations (4)
| Title |
|---|
| 刘明海，张亮.硅外延片(111) 面层错腐蚀坑显微图象分析.四川师范大学学报(自然科学版)19 5.1996,19(5),14,15,25,35,45. |
| 刘明海,张亮.硅外延片(111) 面层错腐蚀坑显微图象分析.四川师范大学学报(自然科学版)19 5.1996,19(5),14,15,25,35,45. * |
| 须轮，陈宏毅.硅外延层微缺陷形成的一些工艺因素及其对制管的影响.半导体技术1982年 第2期.1982,1982年(第2期),1-5. |
| 须轮,陈宏毅.硅外延层微缺陷形成的一些工艺因素及其对制管的影响.半导体技术1982年 第2期.1982,1982年(第2期),1-5. * |
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