CN101060166A - An optically transparent electrode and its manufacture method - Google Patents
An optically transparent electrode and its manufacture method Download PDFInfo
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- CN101060166A CN101060166A CNA2006100758378A CN200610075837A CN101060166A CN 101060166 A CN101060166 A CN 101060166A CN A2006100758378 A CNA2006100758378 A CN A2006100758378A CN 200610075837 A CN200610075837 A CN 200610075837A CN 101060166 A CN101060166 A CN 101060166A
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- layer
- amorphous silicon
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- silicon layer
- euphotic electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The disclosed transparent electrode comprises a substrate and a multicrystal silicon layer on the substrate, wherein the multicrystal silicon film can be made of amorphous silicon, monocrystal silicon, or other silicon compound. The preparation method can be low-cost magnetron sputtering or electron beam evaporation, just needs the vacuum degree up to 10-5Pa. compared with IPO film, this invention reduces cost, and improves product performance well.
Description
Technical field
The present invention relates to a kind of euphotic electrode and preparation method thereof.
Background technology
At present, common organic electroluminescence device is to be substrate with transparent electro-conductive glass, and light penetrates from the bottom; But require light to penetrate in some applications from the top.Even some is the situation of anode with ITO, also require light from the top outgoing.The Organic Light Emitting Diode that ejects light has been opened up the frontier of organic luminescent device research and more wide application prospect, for example, when adopting silicon chip to make substrate, can on Si, carry out the organic light-emitting device drive circuit in advance, make organic luminous layer then, prepare liftout optical electrode at last, so just realized that silica-based photoelectricity is integrated.The resolution of silica-based organic display spare, refresh rate and power consumption generally all are better than existing organic luminescent device based on ITO.In opto-electronic conversion, in solar cell and photodiode, also need the electrode of printing opacity.
For euphotic electrode, selectable material is many, but finally must try to achieve balance between light transmittance and conductivity.Aspect organic light emission, adopting at present more has ITO and thin Al/Ag or LiF/Al/Ag composite bed (Al often is the nm magnitude), and how as negative electrode.But the former has very high requirement because deposit ITO is easy to damage organic luminous layer for equipment and technology; And the latter causes the device internal quantum efficiency low, and reflection is serious, and light transmittance is lower, and stability is also relatively poor in addition.
Summary of the invention
The purpose of this invention is to provide euphotic electrode that a kind of work function is adjustable, boundary reflection is little, light transmittance is high and chemical stability is good and preparation method thereof.
Euphotic electrode provided by the present invention comprises transparent substrates and the polysilicon layer that is positioned on the transparent substrates.
For stability and the electrical contact performance that improves electrode, polysilicon film should be more than the thickness of 10nm.For guaranteeing higher light transmittance, this thickness should be below 100nm.If be used for infrared band, can be increased to micron dimension to thickness.
Can add the masterplate of any figure at above-mentioned top electrode as required in use.
This electrode can adopt following two kinds of methods preparation:
First kind, direct deposit spathic silicon layer on substrate;
Here, direct deposit spathic silicon layer is deposited amorphous silicon layer on substrate earlier, and then, amorphous silicon layer is annealed down at 900-1100 ℃ and formed polysilicon layer; Perhaps, in the deposited amorphous silicon layer, heating makes the amorphous silicon layer annealing that deposits on the substrate form polysilicon layer under 900-1100 ℃, obtains described euphotic electrode.
Here, deposition can adopt magnetic control to spatter evaporation, electron beam evaporation, ion beam evaporation, modes such as evaporation of molecule extension or chemical vapor deposition.
Second kind is deposited amorphous silicon layer on transparent substrates, and deposition Ni layer or Al layer on amorphous silicon layer then form polysilicon layer at the 450-650 ℃ of 20min-48h that anneals down then, clean at last and remove Ni layer or Al layer, obtain described euphotic electrode.
Here, deposition also can adopt magnetic control to spatter evaporation, electron beam evaporation, ion beam evaporation, modes such as evaporation of molecule extension or chemical vapor deposition.
Amorphous silicon layer thickness is 10-100nm; The thickness of described Ni layer or Al layer is 1-10nm.Cleaning can be adopted hydrochloric acid or salpeter solution.
The present invention can take into account fundamentals such as light transmittance, stability and low cost with polysilicon membrane as euphotic electrode.Raw material can be an amorphous silicon, and the monocrystalline silicon tailing also is other compounds of silicon; Preparation technology can be with the very low magnetron sputtering of cost or electron beam evaporation etc., and vacuum is 10
-5Get final product more than the holder.Compare with adopting thin light-transmission metallic electrode, light transmittance is high and stable.Compare with ito thin film, material and technology cost are all lower.Euphotic electrode of the present invention is at inorganic thin film, organic film and semiconductor light emitting, and also there is extensive use aspects such as photoelectric device and photo-detector.
Embodiment
Prepare polysilicon membrane with magnetron sputtering on embodiment 1, the glass liner
Use magnetron sputtering apparatus, deposition of amorphous silicon films 25nm on glass substrate, and then deposition 2nm Ni.Require vacuum degree 10
-5More than the holder, material purity is more than 99.99%, and used silicon target material is a monocrystalline silicon.Take out sample 600 ℃ of annealing (crystallization) 30 minutes under nitrogen protection, then, remove the Ni layer, obtain having the electrode of layer polysilicon film with rare nitric acid cleaning.After tested, the visual transparency of this electrode is 60%, and the infrared light transmission rate is about 80%, and electric conductivity is stable.
Embodiment 2, prepare polysilicon membrane with chemical vapour deposition (CVD)
With conventional plasma reinforced chemical vapour deposition equipment, substrate is a glass, and reacting gas is a silane, with Ar gas dilution, and deposition 70nm amorphous silicon membrane on substrate, 950 ℃ of annealing 120min in a vacuum then obtain having the electrode of layer polysilicon film.After tested, the visual transparency of this electrode is 40%, and the infrared light transmission rate is about 60%, and electric conductivity is stable.
Embodiment 3, direct deposition preparation polysilicon layer
Deposit on quartz substrate with magnetron sputtering apparatus, in deposition simultaneously, the substrate original position is heated to 1050 ℃, vacuum degree 10
-5More than the holder, silicon single crystal target material purity deposits the thick layer polysilicon film of 25mm more than 99.99% on quartz substrate, promptly obtain having the electrode of layer polysilicon film.After tested, the visual transparency of this electrode is 60%, and the infrared light transmission rate is about 80%, and electric conductivity is stable.
Embodiment 4,
Use magnetron sputtering apparatus, deposition of amorphous silicon films 50nm on glass substrate, and then deposition 8nm Al.Require vacuum degree 10
-5More than the holder, material purity is more than 99.99%, and used silicon target material is a monocrystalline silicon.Take out sample 500 ℃ of annealing (crystallization) 1 hour under nitrogen protection, then, remove the Al layer with the watery hydrochloric acid cleaning.At this moment, visual transparency is 50%, and the infrared light transmission rate is about 70%, and electric conductivity is stable.
Claims (9)
1, a kind of euphotic electrode comprises transparent substrates and the polysilicon layer that is positioned on the transparent substrates.
2, euphotic electrode according to claim 1 is characterized in that: described polysilicon layer thickness is 10-100nm.
3, the preparation method of the described euphotic electrode of claim 1 is directly depositing polysilicon layer on the transparent substrates.
4, preparation method according to claim 3 is characterized in that: described direct deposit spathic silicon layer is elder generation's deposited amorphous silicon layer on substrate, and then, amorphous silicon layer is annealed down at 900-1100 ℃ and formed polysilicon layer, obtains described euphotic electrode.
5, preparation method according to claim 3, it is characterized in that: described direct deposit spathic silicon layer is on substrate in the deposited amorphous silicon layer, heating makes the amorphous silicon layer annealing that deposits on the substrate form polysilicon layer under 900-1100 ℃, obtains described euphotic electrode.
6, according to claim 3 or 4 or 5 described preparation methods, it is characterized in that: described polysilicon layer thickness is 10-100nm.
7, the preparation method of the described euphotic electrode of claim 1, be deposited amorphous silicon layer on transparent substrates, deposition Ni layer or Al layer on amorphous silicon layer then form polysilicon layer at the 450-650 ℃ of 20min-48h that anneals down then, clean at last and remove Ni layer or Al layer, obtain described euphotic electrode.
8, preparation method according to claim 7 is characterized in that: described amorphous silicon layer thickness is 10-100nm; The thickness of described Ni layer or Al layer is 1-10nm.
9, preparation method according to claim 7 is characterized in that: clean and adopt hydrochloric acid or salpeter solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100758378A CN101060166A (en) | 2006-04-20 | 2006-04-20 | An optically transparent electrode and its manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100758378A CN101060166A (en) | 2006-04-20 | 2006-04-20 | An optically transparent electrode and its manufacture method |
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| CN101060166A true CN101060166A (en) | 2007-10-24 |
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| CNA2006100758378A Pending CN101060166A (en) | 2006-04-20 | 2006-04-20 | An optically transparent electrode and its manufacture method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019091919A (en) * | 2010-07-02 | 2019-06-13 | サンパワー コーポレイション | Manufacturing method of solar cell with tunnel dielectric layer |
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2006
- 2006-04-20 CN CNA2006100758378A patent/CN101060166A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019091919A (en) * | 2010-07-02 | 2019-06-13 | サンパワー コーポレイション | Manufacturing method of solar cell with tunnel dielectric layer |
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Open date: 20071024 |