CN101056495A - RF plasma supply device - Google Patents
RF plasma supply device Download PDFInfo
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- CN101056495A CN101056495A CNA2006101309893A CN200610130989A CN101056495A CN 101056495 A CN101056495 A CN 101056495A CN A2006101309893 A CNA2006101309893 A CN A2006101309893A CN 200610130989 A CN200610130989 A CN 200610130989A CN 101056495 A CN101056495 A CN 101056495A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53878—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current by time shifting switching signals of one diagonal pair of the bridge with respect to the other diagonal pair
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a method for controlling and/or adjusting the output power of a high-frequency plasma source unit (1, 21). The invention comprises: a. at least one first and one second high-frequency power signals are respectively generated by high-frequency generators (6, 7, 24 to 26); b. on the basis of the phase position and/or power level of the high-frequency power signal, at least two high-frequency power signals are coupled into one coupled high-frequency power; c. the coupled high-frequency power is divided into a plasma power to be transported to plasma loading (2) and a compensation power to be transported to compensation loading (10,32); d. therefore, the power level and/or phase position of the high-frequency power signal can be controlled and/or adjusted, that is, the compensation power can be formed by a non-main part of the coupled high-frequency power for the plasma power between the preset lower power limit and preset specified power limit and coupled high-frequency power, and compensation power can also be formed by a main part of the coupled high-frequency power for the plasma power below the limit of preset lower power.
Description
Technical field
The present invention relates to a kind of method that is used to control and/or regulate the power output of a RF plasma supply device, comprise following method step:
A. produce at least one first and one second high frequency power signal by a radio-frequency generator respectively;
B. according to the phase place and/or the level (amplitude) of high frequency power signal, at least two high frequency power signals are coupled as the high frequency power that has been coupled;
C. make the high frequency power that has been coupled be divided into a plasma power and a compensation power that is transported to compensating load that is transported to plasma load;
The invention still further relates to a kind of RF plasma supply device.
Background technology
For plasma source apparatus and/or be arranged on wherein radio-frequency generator, provided rated power by the producer, wherein the rated power sum of each radio-frequency generator constitutes the rated power of plasma source apparatus.
Known radio-frequency generator reaches thus, and RF plasma supply device is difficult to operation under the situation of a non-major part of its rated power.They tend to take place uncontrollable vibration and are difficult to be adjusted to an accurate power output.Usually the producer by radio-frequency generator also provides a following power limit, and radio-frequency generator no longer can reliably or can not move with required precision when this time power limit is following.This down power limit for example be 10% of rated power, still also can be positioned at lower numerical value, for example 1%.Provide the following power limit of plasma source apparatus in the following power limit sum of this radio-frequency generator.
Known to plasma source apparatus is being moved below the power limit down, the first of power is transported to an additional resistance and the remainder of power is transported to load and radio-frequency generator is being moved more than the power limit down at it.Can make resistance and load serial or parallel connection for this reason.For the small-power below following power limit, this solution provides an available result mostly.When the power of supplying with described load improved on the rated range direction, essential this resistance that disconnects was because otherwise may this means that big loss and high cooling expend with a very high power delivery to this resistance.Because this resistance in known embodiment is unadjustable, it must disconnect on impact type ground, therefore can not cross a wide in range power bracket continuously.
Require them in a wide power bracket, very accurately to adjust for RF plasma supply device.This power bracket should be crossed continuously.
Summary of the invention
Therefore task of the present invention is, a kind of method and a device are provided, and can realize relevant therewith improvement by them.
This task is solved by the method that this paper starts described type, wherein realize the level of high frequency power signal and/or the control and/or the adjusting of phase place like this, promptly, for the plasma power in the scope between predetermined following power limit and predetermined rated power, a non-major part of the high frequency power that has been coupled constitutes compensation power (Ausgleichsleistung), and for the plasma power below predetermined following power limit, a major part of the high frequency power that has been coupled constitutes compensation power.Plasma source apparatus also can stably be moved in time on the wide power bracket, especially in following operation below the power limit.Big power bracket can be capped no problemly and be crossed substantially continuously.At this preferred high frequency power generator of control like this, make all high frequency power generators provide essentially identical high frequency power.
Plasma load can be a vacuum plasma processing chamber, for example be used for coating, etching or by means of the plasma process substrate or vacuum plasma processing chamber move etc. from process or in a gas laser exciting laser.
In scope of the present invention, be interpreted as frequency in the frequency range between 1 to 30MHz for high frequency.Optimized frequency for plasma load is 13MHz and 27MHz.
Preferably regulate the little compensation power of plasma power that is compared to below predetermined following power limit for the plasma power of scope between predetermined following power limit and predetermined rated power.Following power limit for example can be predetermined according to rated power.For example power limit can be a predetermined power in 0.1% to 20% scope of rated power under the conduct.Following power limit is preferred predetermined to be about 10% of rated power.
Such scheme is particularly preferred, wherein the level of high frequency power signal/or phase place (Phasen) especially when RF plasma supply device moves in the rated power scope, be conditioned, its mode is control and/or DC current source and/or the direct voltage source of regulating high frequency power generator.Can regulate especially the plasma power level in the power bracket more than the power limit down in this way especially simply.Under simple scenario, just in time there are two radio-frequency generators and a coupling unit that is used to make the high frequency power signal plus.The rated power of each radio-frequency generator for example is 1.5kW, and they are all for example worked with 13.56MHz.If RF plasma supply device is worked in the scope greater than its rated power 10%, then regulate the phase place and the level of two radio-frequency generators like this, make to make all high frequency powers that have been coupled offer plasma load as far as possible.It then is 3kW when rated power.The power control example as the direct current by the control radio-frequency generator-or direct voltage input realize.If RF plasma supply device is worked in the scope less than its rated power 10%, promptly less than the 300W plasma power, then the control of plasma power preferably needs the level realization (for example by control direct voltage source or DC current source) by the high frequency power signal of control radio-frequency generator no longer forcibly, but preferably mainly realizes by controlling two mutual phase places of radio-frequency generator.
Advantageously, produce the high frequency power signal by the switch element in the control radio-frequency generator.Radio-frequency generator loss with intermittent mode work is preferred for bigger power especially less and therefore.Known radio-frequency generator with intermittent mode operation, for example grade D (full-bridge or half-bridge) or grade E, F amplifier or its mixed form.The radio-frequency generator of these forms has one or more switch elements and an output loop.Switch element switches on and off by the switching frequency of a switching signal.
Described output loop mainly has two tasks: at first the high frequency power signal is carried out filtering, have only switching frequency to arrive output thus substantially.Secondly output loop can be realized the switch of few loss of switch element.The power output of each radio-frequency generator for example can be by direct voltage input or direct current input control.During with the frequency work more than 1MHz of the radio-frequency generator of intermittent mode operation generally with MOSFET as switch element.These MOSFET have output capacitance Coss, and it non-linearly depends on the voltage in the output of MOSFET between drain electrode and the source connection.Described electric capacity for high output voltage (for example greater than 100V) only slightly along with the increase of voltage slowly descends, and electric capacity rises when voltage descends very tempestuously for low output voltage (for example less than 40V) and can be with power level (for example coefficient 100,1000) numerical value during greater than high voltage.Mainly be when in fact radio-frequency generator is designed to move under high voltage, this make with the radio-frequency generator of intermittent mode work operate in low-voltage the time complicated because electric capacity always acts on the output loop with the radio-frequency generator of intermittent mode work.But a numerical value in the ifs circuit changes very tempestuously, and then this will change the characteristic of output loop and make the output loop may be no longer or not correctly bear two task.Under the situation of the low power output of comparing with rated power, becoming of power adjustments is very complicated thus.But on the power bracket of a non-constant width, carry out very accurately power adjustments for many instructions for uses in the vacuum plasma body technology, especially for power much smaller than the rated power of RF plasma supply device.An additional problem is that under the situation of small voltage, the variation of dC/dU is very large.This causes the non-linear of output loop characteristic.
Show by this explanation, for the following value of power limit be 10% of rated power regularly under the adjustment situation, but according to desired rated power and desired minimum will controlled power in 0.1% to 20% scope of rated power, the variation.For with the radio-frequency generator of intermittent mode the work non-linear and circuit tolerance of output capacitance importantly, it also depends on maximum voltage on the switch element, frequency, power etc.
The level of high frequency power signal and/or phase place can be regulated with simple especially mode and method, and its mode is with phase shifting method control switch element.For example a radio-frequency generator can have two half-bridges, and they are made up of two elements of alternately connecting respectively.Regulate the phase place of half-bridge and regulate the power that radio-frequency generator is exported thus by the control switch element.Even use this principle of power adjustments, very little power can not enough accurately be conditioned.When producing the high frequency power signal with this form, the control and/or the adjusting that are transported to the power of compensating load (Ausgleichslast) also are favourable, so that whole RF plasma supply device can be moved reliably.
Particularly preferably be, by control and/or regulate the DC current source of radio-frequency generator and/or direct voltage source realize being coupled the coarse adjustment of high frequency power, control the accurate adjustment joint of the high frequency power that realizes being coupled by the phase shift of radio-frequency generator.Thus in order to make RF plasma supply device not only down below the power limit but also moving more than the power limit down, can be with very high precision regulating circuit power.Additionally can also turn-off single radio-frequency generator and remaining radio-frequency generator is moved more than its oneself following power limit.The power output of the RF plasma supply device when moving below the power limit is down only regulated by power divider.
Stipulate that in an advantageous method scheme described high frequency power signal is at one 90 ° hybrid circuits (Hybrid), especially be coupled in a three-dB coupler.Can avoid with the plasma load erroneous matching time, repeatedly reflecting by using these coupling units.This means that protection is prepended to the generator of 90 ° of hybrid circuits effectively.Can realize a power adjustments when the small-power by 90 ° of hybrid circuits in addition.For a power coupler, 90 ° of hybrid circuits for example, the coupling of high frequency power (input) signal mean some high frequency power signals be added be one the high frequency power of addition as the high frequency power that has been coupled.Make the high frequency power after the addition be divided into two high frequency powers (output) signal according to the level of high frequency power signal and/or phase place then.
If produce more than two high frequency power signals, can produce bigger plasma power, wherein, per two high frequency power signals are coupled as the high frequency power signal that has been coupled.The coupling of high frequency power signal or addition preferably realize in a coupling unit, a plurality of compensating loads also are set thus in an advantageous manner and correspondingly produce a plurality of compensation powers.At these two high frequency power signals that in coupling unit, preferably are coupled respectively.A plurality of coupling units can be connected, and produce the high frequency power signal thus on the end of series connection, and it constitutes the plasma power of waiting to be transported to plasma load.
Advantageously, measure the parameter that at least one describes high frequency power.It is contemplated that at this, in the output of at least one radio-frequency generator, measure the parameter of high frequency power signal or this high frequency power signal of described description.Select or additionally, also can detect the parameter of describing plasma power and/or compensation power.Can detect or power itself or voltage and/or electric current are used as describing the parameter of high frequency power.
Can stipulate that in a method scheme parameter of described description high frequency power is used to regulate measured high frequency power or another high frequency power.For example can use a parameter that in radio-frequency generator, measures thus, be used to regulate the high frequency power that provides by this generator.It is contemplated that in addition, use detected plasma power, be used to regulate the high frequency power of one or more radio-frequency generators.Be transported to a control-and/or adjusting device at the parametric optimization of this measured description high frequency power.
In an expanded configuration of the present invention, can stipulate, carry out an impedance matching.This impedance matching is preferably carried out between plasma load and plasma source apparatus.
In scope of the present invention, also relate to a RF plasma supply device, be used for the load of article on plasma body and supply with plasma power, this device comprises at least two radio-frequency generator and at least one coupling unit of being used to produce one first and second high frequency power signal, in this coupling unit, produce the high frequency power that has been coupled by two high frequency power signals, wherein on described at least one coupling unit, can connect or connect described plasma load and a compensating load, and have a control that is used to control and/or regulate radio-frequency generator-and/or adjusting device, wherein said control-and/or adjusting device be set for and carry out as above-mentioned method or method flexible program.Can realize above-mentioned advantage by this device.
Particularly preferably be at this, described method is carried out in hardware, firmware and/or software.The advantage of carrying out in hardware is to realize a stepless fast power adjustments.Under situation about in firmware or software, carrying out, can be easy to dispose, reliable and cost advantageously expends with little nursing and regulate described control or adjustment.
In a favourable form of implementation, control-and/or adjusting device have one and be used for being used for second control unit that distributes in the high frequency power power controlling that is coupled below the power limit down for first control unit that distributes in the following high frequency power power controlling that is coupled more than the power limit and one.Especially work for the control of the DC current source of radio-frequency generator and/or phase shift control and second control unit works for the phase control of radio-frequency generator at this first control unit.
Can stipulate that at this second control unit is assigned on the compensating load fundamental component of the high frequency power that is coupled, it especially the high frequency power that is coupled 10%, preferred more than 20%.
Particularly preferably be, described coupling unit is constructed to 90 ° of hybrid circuits, especially is configured to three-dB coupler.Can save this paper by this coupling unit starts described resistance and switches on and off.Can avoid negatively acting on repeatedly reflection on the radio-frequency generator by 90 ° of hybrid circuits in addition.
If have, can cover bigger power spectrum and realize higher rated power more than two radio-frequency generators and at least two coupling units of especially connecting.When this external and plasma load mated mistakenly, 90 ° of hybrid circuits by each series connection had improved greatly to disturb and have suppressed.
Be used to measure a measurement mechanism of describing the parameter of high frequency power if at least one is set, not only can carry out power and control but also can regulate, because can realize feedback according to predetermined performance number.Therefore described measurement mechanism preferably with control-and/or adjusting device be in and be connected.
In another preferred development configuration of the present invention, the DC current source that at least one is used for radio-frequency generator can be set, it by control-and/or adjusting device control and/or regulate.Can regulate the level of high frequency power signal thus especially simply.Can be used for a plurality of radio-frequency generators or can oneself a DC current source be set at this DC current source for each radio-frequency generator.
Other features and advantages of the present invention are provided by following explanation and other application documents by means of embodiments of the invention shown in the drawings, and accompanying drawing illustrates the important details for the present invention.Each feature can be individually or a plurality of combination in any ground in flexible program of the present invention, realize.
Description of drawings
The preferred embodiments of the present invention shown in the drawings describe in detail by means of accompanying drawing below.In the accompanying drawing:
Fig. 1 is according to first embodiment of RF plasma supply device of the present invention,
Second embodiment of Fig. 2 RF plasma supply device,
Fig. 3 is used to represent the diagram of the radio-frequency generator of phase shift control.
Embodiment
A RF plasma supply device 1 shown in Figure 1 produces a plasma power that is used to supply with plasma load 2 therein.Shown RF plasma supply device 1 connects by 3 one single-phase or heterogeneous power supply networks of a power connection.This power connection 3 can be used as webge contact and constitutes.This power connection 3 is connected with DC power supply 4,5.These DC power supply dispose to a radio-frequency generator 6,7 respectively and are described radio-frequency generator power supply with direct current or direct voltage respectively.Alternatively, also can a common DC power supply be set for two radio-frequency generators 6,7.Produce a high frequency power signal respectively by radio-frequency generator 6,7, the latter is transported to a coupling unit 8 that constitutes as 90 ° of hybrid circuits.Described high frequency power signal is coupled as the high frequency power that has been coupled in coupling unit 8.This coupling unit 8 will be coupled high frequency power be assigned to output 9 and 11.Plasma power that infeeds plasma load 2 is transported to output 9 and a compensation power that infeeds compensating load 10 is transported to output 11.Phase place on the high frequency power signal is decided, and the high frequency power that has been coupled differently is assigned in the output 9,11.When 90 ° of the high frequency power signal phase shifts of radio-frequency generator 6,7, the high frequency power that has been coupled almost entirely infeeds output 9.
The core component of described RF plasma supply device 1 is a control-and/or adjusting device 12, and it is not only regulated and/or control DC current source 4,5 but also regulates and/or control radio-frequency generator 6,7.Realize described control and/or adjusting like this at this, make that when the RF plasma supply device operation that is used at the plasma power of scope between following power limit and the predetermined rated power overwhelming majority of the high frequency power that has been coupled is transported to output 9 and also is transported on the plasma load 2 thus and the fraction of the high frequency power that only will be coupled is transported on the compensating load 10.In this range of operation, radio-frequency generator 6,7 is also moving between power limit and its rated power under it.For this purpose, can or regulate DC power supply 4,5 and regulate the signal level that radio-frequency generator 6,7 is exported by control.Alternatively or additionally, the radio-frequency generator of the radio-frequency generator 6,7 that is constructed to work in intermittent mode can be used to influence the level of high frequency power signal by the approach control with phase shifting method.
When moving in the power bracket of RF plasma supply device 1 below following power limit, radio-frequency generator 6,7 can by described control-and/or adjusting device 12 control like this, make the high frequency power signal have a phase place, in this phase place, the overwhelming majority of the high frequency power that is coupled is transported on the compensating load 10 and the pettiness of the high frequency power that only will be coupled partly is transported on the plasma load 2.
In the embodiment shown, be provided with the measurement mechanism 13,14,15 that some are used to detect the parameter of describing high frequency power, they are transferred to control-and/or adjusting device 12 with described parameter, can realize the adjusting of one or more high frequency powers thus.This control-and/or adjusting device 12 have one first control unit 16 and one second control unit 17 in the present embodiment, first control unit is used for controlling the plasma power and the compensation power of described power bracket between following power limit and rated power, and second control unit is used in the power adjustments that is positioned at the power bracket under the above-mentioned power bracket.Between output 8 and plasma load 2, an impedance matching unit 18 is set.
In the RF plasma supply device 21 of Fig. 2, a DC power supply 22 is connected on the electrical network joint 23.22 pairs of three radio-frequency generators of this DC power supply 24,25,26 are supplied with direct current and/or direct voltage.The high frequency power signal that produces in radio-frequency generator 24,25 is coupled as first high frequency power that has been coupled in first coupling unit 27.First component of the high frequency power that has been coupled is transported on second coupling unit 28, and the remainder of coupling high frequency power is transported on first compensating load 29.The phase place of the high frequency power signal that is produced by radio-frequency generator 24,25 is depended in the distribution of the high frequency power that has been coupled.In second coupling unit 28, make power output or be coupled in radio-frequency generator 26 on high frequency power that produces or the high frequency power signal that provides by this radio-frequency generator, produce second high frequency power that has been coupled thus at the high frequency power signal that provides in the output of first coupling unit 27.The phase place of the high frequency power signal that provides according to the high frequency power signal that is provided by first coupling unit 27 with by radio-frequency generator 26, second high frequency power that has been coupled is divided into the output 30 by second coupling unit 28 and is transported to plasma power on the plasma load 2 and one by exporting 31 compensation powers that are transported to second compensating load 32.
In this case, control-and/or adjusting device 12 controls or adjusting DC power supply 22 and radio-frequency generator 24-26.For reason not shown measurement mechanism in Fig. 2 clearly.In the embodiment shown, coupling unit 28 is placed on coupling unit 27.Therefore coupling unit the 27, the 28th is connected.
In Fig. 3, be shown specifically radio-frequency generator 6.This radio-frequency generator 6 has two parts 40,41, and they are according to a full-bridge circuit setting.Circuit according to Fig. 3 can allow the power of exporting on 42 is adjusted, and its mode is, is transported to the phase place between the switching signal of two and half ones 40,41 by change.The first half ones comprise pair of switches element 43,44, and they receive a pair of switching signal that is provided by signal source 45. Switch element 43,44 is connected between the negative and plus end of DC power supply 22.The output of switch element 43,44 is connected with an inductance 46, and the latter is the part of output oscillating circuit.This output oscillating circuit is made of an inductance 46 and an electric capacity 47.The output of the first half ones 40 is connected with first tap of transformer 48.
The second half ones 41 comprise switch element 49,50.A signal source 51 provides the pair of switches signal, and they are transported to switch element 49,50.Described signal source 45,51 also can be combined into a single unit.
The second half ones 41 also comprise an output oscillating circuit, and the latter has an inductance 52 and an electric capacity 53.The second half ones 41 are connected with second tap of transformer 48.Realize that between half one 40,41 and the output 42 electricity separates by transformer 48.Described half one 40,41 is by elementary winding 54 series connection of transformer 48.
Described half one the 40, the 41st, series connection, therefore cause that at the phase change between the switching signal of each half one 40,41 of control the power in the output 42 changes.When switch element 43,49 worked or be inoperative in the identical moment, then they were worked in phase place.And if switch element 43 always disconnects when switch element 49 is connected, and if when switch element 49 disconnections switch element 43 always connect, then switch element is not in phase place or 180 ° of phase shifts.
Phase place between half one 40,41 determines by phase control unit 60, and wherein, phase control unit 60 can be control-and/or adjusting device 12, especially part of control unit 16.These phase control unit 60 control signal sources 45,51 are so that adjust phase shift or phase place between two and half ones 40,41.When half one 40,41 during, will in output 42, realize the highest level of maximum power or high frequency power signal with 180 ° phase shift operation.When half one 40,41 moves, minimum power output will be realized in phase place.In this case, each half one 40,41 and load impedance no-load running irrespectively.The power adjustments of describing by means of Fig. 3 in output 42 is the power adjustments with the phase shifts method.
Claims (19)
1. one kind is used for control and/or regulates the method for the power output of a RF plasma supply device (1,21), comprises following method step:
A. produce at least one first and one second high frequency power signal by a radio-frequency generator (6,7,24-26) respectively;
B. according to the phase place and/or the level of these high frequency power signals, at least two high frequency power signals are coupled as the high frequency power that has been coupled;
C. make the high frequency power that has been coupled be divided into a plasma power and a compensation power that is transported to compensating load (10,32) that is transported to plasma load (2);
It is characterized in that,
D. control and/or regulate the level and/or the phase place of high frequency power signal like this, promptly, for the plasma power in the scope between predetermined following power limit and predetermined rated power, a non-major part of the high frequency power that has been coupled is a compensation power, and for the plasma power below given following power limit, a major part of the high frequency power that has been coupled is a compensation power.
2. the method for claim 1, it is characterized in that, adjust a little compensation power of plasma power that is compared to below predetermined following power limit for the plasma power in the scope between predetermined following power limit and predetermined rated power.
3. method as claimed in claim 1 or 2, it is characterized in that, the level of high frequency power signal/or phase place especially when RF plasma supply device (1,21) moves in the rated power scope, adjust by control and/or DC current source and/or the direct voltage source of regulating high frequency power generator (6,7,24-26).
4. the method according to any one of the preceding claims is characterized in that, the high frequency power signal produces by the switch element (43,44,49,50) in the control radio-frequency generator (6,7,24-26).
5. method as claimed in claim 4 is characterized in that, by control level and/or the phase place that these switch elements (43,44,49,50) adjust the high frequency power signal with phase shifting method.
6. the method according to any one of the preceding claims, it is characterized in that, by control and/or regulate the DC current source of radio-frequency generator (6,7,24-26) and/or direct voltage source realize being coupled the coarse adjustment of high frequency power, by the phase shift of radio-frequency generator (6,7,24-26) being controlled the accurate adjustment joint of the high frequency power that realizes being coupled.
7. the method according to any one of the preceding claims is characterized in that, described high frequency power signal is at 90 ° of hybrid circuits, especially be coupled in a three-dB coupler.
8. the method according to any one of the preceding claims is characterized in that, produces more than two high frequency power signals, and wherein, per two high frequency power signals are coupled as the high frequency power signal that has been coupled.
9. the method according to any one of the preceding claims is characterized in that, produces a plurality of compensation powers for a plurality of compensating loads (29,32).
10. the method according to any one of the preceding claims is characterized in that, being added in mutually in some coupling units (8,27,28) of high frequency power signal realizes that wherein, a plurality of coupling units (27,28) are connected.
11. the method according to any one of the preceding claims is characterized in that, measures a parameter of describing high frequency power.
12. method as claimed in claim 11 is characterized in that, the parameter of described description high frequency power is used to regulate measured high frequency power or another high frequency power.
13. the method according to any one of the preceding claims is characterized in that, carries out an impedance operation.
14. RF plasma supply device (1,21), be used for a plasma load (2) is supplied with plasma power, this RF plasma supply device comprises at least two radio-frequency generators (6 that are used to produce one first and one second high frequency power signal, 7,24-26) with at least one coupling unit (8,27,28), in described coupling unit, produce the high frequency power that has been coupled by two high frequency power signals, wherein, at described at least one coupling unit (8,28) can connect or connect described plasma load (2) and a compensating load (10 on, 32), it also has a control and/or regulates radio-frequency generator (6,7, control 24-26)-and/or adjusting device (12), it is characterized in that, described control-and/or adjusting device (12) be configured to carry out the method according to any one of the preceding claims.
15. RF plasma supply device as claimed in claim 14 is characterized in that, described method is carried out in hardware, firmware and/or software.
16., it is characterized in that described coupling unit (8,27,28) is constructed to 90 ° of hybrid circuits, especially three-dB couplers as each described RF plasma supply device in claim 14 or 15.
17. as each described RF plasma supply device in the claim 14 to 16, it is characterized in that, be provided with more than two radio-frequency generators (6,7,24-26) and at least two, the especially coupling unit (27,28) of series connection.
18., it is characterized in that as each described RF plasma supply device in the claim 14 to 17, be provided with at least one measurement mechanism (13-15), be used to measure a parameter of describing high frequency power.
19. as each described RF plasma supply device in the claim 14 to 18, it is characterized in that, be provided with the DC current source (4,5,22) that at least one is used for radio-frequency generator (6,7,24-26), it by control-and/or adjusting device (12) control and/or regulate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05022558.0 | 2005-10-17 | ||
| EP20050022558 EP1783904B1 (en) | 2005-10-17 | 2005-10-17 | HF plasma supply system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101056495A true CN101056495A (en) | 2007-10-17 |
| CN101056495B CN101056495B (en) | 2011-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101309893A Expired - Fee Related CN101056495B (en) | 2005-10-17 | 2006-10-17 | RF plasma supply device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7745955B2 (en) |
| EP (1) | EP1783904B1 (en) |
| JP (1) | JP4755566B2 (en) |
| KR (1) | KR100842243B1 (en) |
| CN (1) | CN101056495B (en) |
| AT (1) | ATE392742T1 (en) |
| DE (1) | DE502005003768D1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105830196A (en) * | 2013-12-18 | 2016-08-03 | 通快许廷格两合公司 | Power supply system with multiple amplifier paths and a method for exciting a plasma |
| CN105830195A (en) * | 2013-12-18 | 2016-08-03 | 通快许廷格两合公司 | Power supply system and method for generating power |
| CN105830196B (en) * | 2013-12-18 | 2019-03-26 | 通快许廷格两合公司 | Power-supply system with multiple amplifier paths and the method for exciting plasma |
| CN105830195B (en) * | 2013-12-18 | 2019-05-07 | 通快许廷格两合公司 | Power-supply system and method for generating power |
| US10354839B2 (en) | 2013-12-18 | 2019-07-16 | Trumpf Huettinger Gmbh + Co. Kg | Power supply systems and methods for generating power with multiple amplifier paths |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101056495B (en) | 2011-01-12 |
| EP1783904A1 (en) | 2007-05-09 |
| JP4755566B2 (en) | 2011-08-24 |
| DE502005003768D1 (en) | 2008-05-29 |
| JP2007115688A (en) | 2007-05-10 |
| US20070145900A1 (en) | 2007-06-28 |
| EP1783904B1 (en) | 2008-04-16 |
| US7745955B2 (en) | 2010-06-29 |
| KR20070042085A (en) | 2007-04-20 |
| KR100842243B1 (en) | 2008-06-30 |
| ATE392742T1 (en) | 2008-05-15 |
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