CN101034679A - Substrate processing apparatus, substrate attracting method, and storage medium - Google Patents
Substrate processing apparatus, substrate attracting method, and storage medium Download PDFInfo
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- CN101034679A CN101034679A CNA2007100860633A CN200710086063A CN101034679A CN 101034679 A CN101034679 A CN 101034679A CN A2007100860633 A CNA2007100860633 A CN A2007100860633A CN 200710086063 A CN200710086063 A CN 200710086063A CN 101034679 A CN101034679 A CN 101034679A
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- lead plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
A substrate processing apparatus carrying out processing on a substrate, which enables attachment of particles to a surface of a substrate to be prevented. A substrate processing apparatus comprises a housing chamber in which the substrate is housed, and a stage that is disposed in the housing chamber and on which the substrate is mounted. The stage having in an upper portion thereof an electrostatic chuck comprising an insulating member having an electrode plate therein, and the electrode plate having a DC power source connected thereto. The DC power source applies a negative voltage to the electrode plate when the substrate is to be attracted by the electrostatic chuck.
Description
Technical field
The present invention relates to substrate board treatment, substrate attracting method and storage medium particularly relate to the substrate board treatment with the electrostatic chuck that adsorbs substrate.
Background technology
Wafer as substrate is carried out plasma treatment, and the substrate board treatment that for example carries out etch processes has the reception room of accommodating wafer and is configured in this reception room the mounting table of mounting wafer.This substrate board treatment produces plasma in reception room, utilize this plasma that wafer is carried out etch processes.
Mounting table has the electrostatic chuck that is made of the insulating properties parts that battery lead plate is arranged in inside at an upper portion thereof, and wafer is positioned on the electrostatic chuck.When wafer is carried out etch processes, direct voltage is added on the battery lead plate, utilize the Coulomb force or the Johnsen-Rahbek power that produce by this direct voltage, electrostatic chuck absorption wafer.
Usually, there is inside to have the ambipolar and inner one pole type of the battery lead plate more than 2 as electrostatic chuck with a battery lead plate.Ambipolar electrostatic chuck is given potential difference absorption wafer (for example, with reference to patent documentation 1 and 2) usually between the battery lead plate more than 2, the electrostatic chuck of one pole type is by giving potential difference absorption wafer between battery lead plate and wafer.
[patent documentation 1] Japanese kokai publication hei 5-190654 communique
[patent documentation 2] Japanese kokai publication hei 10-270539 communique
Yet, when electrostatic chuck absorption wafer, when the positive direct voltage with surplus was applied on the battery lead plate, the focusing ring of configuration around the peripheral skirt (edging) of the wafer that is adsorbed from encirclement or the electrostatic chuck was produced as the arc discharge of local direct-current discharge.When arc discharge, because concentration of energy is in the discharge destination for example on the internal face of reception room, peels off attached to the deposit on the reception room internal face and to disperse, become particle.This particle becomes the reason of the defects of semiconductor device of being made by wafer attached to wafer surface.
Summary of the invention
The object of the present invention is to provide and to prevent particle attached to the substrate board treatment on the substrate surface, substrate attracting method and storage medium.
In order to achieve the above object, the described substrate board treatment of first aspect present invention, substrate is handled, it is characterized in that, have: accommodate the reception room of aforesaid substrate and be configured in this reception room and the mounting table of mounting aforesaid substrate, have on the top of this mounting table by inside and have the electrostatic chuck that the insulating properties parts of battery lead plate constitute, above-mentioned battery lead plate is connected with DC power supply, when above-mentioned electrostatic chuck adsorbed aforesaid substrate, above-mentioned DC power supply applied negative voltage to above-mentioned battery lead plate.
The substrate board treatment of a second aspect of the present invention, it is characterized in that, in the described substrate board treatment of above-mentioned first aspect, when above-mentioned electrostatic chuck breaks away from aforesaid substrate, above-mentioned DC power supply applies positive voltage to above-mentioned battery lead plate, and the value of above-mentioned positive voltage is below 1500V.
The substrate board treatment of a third aspect of the present invention, it is characterized in that, in the described substrate board treatment of above-mentioned first aspect, above-mentioned mounting table is connected with high frequency electric source, before above-mentioned battery lead plate applied above-mentioned negative voltage, above-mentioned high frequency electric source applied High frequency power to above-mentioned mounting table in above-mentioned DC power supply.
The substrate board treatment of a fourth aspect of the present invention, it is characterized in that, in the described substrate board treatment of above-mentioned second aspect, above-mentioned mounting table is connected with high frequency electric source, before above-mentioned battery lead plate applied above-mentioned negative voltage, above-mentioned high frequency electric source applied High frequency power to above-mentioned mounting table in above-mentioned DC power supply.
The described substrate board treatment of a fifth aspect of the present invention is characterized in that, in the described substrate board treatment of the either side of above-mentioned first aspect～fourth aspect, is formed with polysilicon layer on the surface of aforesaid substrate, the above-mentioned etch processes that is treated to.
In order to achieve the above object, the described substrate attracting method of a sixth aspect of the present invention, it is the substrate attracting method in substrate board treatment, the aforesaid substrate processing unit has the reception room of accommodating substrate and is configured in this reception room and the mounting table of mounting aforesaid substrate, has the electrostatic chuck that has the insulating properties parts of battery lead plate to constitute by inside on the top of this mounting table, above-mentioned battery lead plate is connected with DC power supply, this substrate attracting method comprises that above-mentioned DC power supply applies step to the negative voltage that above-mentioned battery lead plate applies negative voltage when above-mentioned electrostatic chuck adsorbs aforesaid substrate.
The described substrate attracting method of a seventh aspect of the present invention is characterised in that, aspect the 6th in the described substrate attracting method, comprise when above-mentioned electrostatic chuck breaks away from aforesaid substrate, above-mentioned DC power supply applies step to the positive voltage that above-mentioned battery lead plate applies positive voltage, and the value of above-mentioned positive voltage is below the 1500V.
The described substrate attracting method of a eighth aspect of the present invention is characterised in that, aspect the 6th in the described substrate attracting method, be included in above-mentioned DC power supply before above-mentioned battery lead plate applies above-mentioned negative voltage, the above-mentioned high frequency electric source that is connected with above-mentioned mounting table applies step to the High frequency power that above-mentioned mounting table applies High frequency power.
The described substrate attracting method of a ninth aspect of the present invention is characterised in that, aspect the 7th in the described substrate attracting method, be included in above-mentioned DC power supply before above-mentioned battery lead plate applies above-mentioned negative voltage, the above-mentioned high frequency electric source that is connected with above-mentioned mounting table applies step to the High frequency power that above-mentioned mounting table applies High frequency power.
In order to achieve the above object, the described storage medium of a tenth aspect of the present invention is characterised in that, it is the storage medium that stores the embodied on computer readable of the program of in computer, implementing substrate attracting method, this substrate attracting method moves in substrate board treatment, this substrate board treatment has: the reception room of accommodating substrate, with be configured in this reception room and the mounting table of mounting aforesaid substrate, the top of this mounting table has the electrostatic chuck that has the insulating properties parts of battery lead plate to constitute by inside, above-mentioned battery lead plate is connected with DC power supply, this program has when above-mentioned electrostatic chuck adsorbs aforesaid substrate, and above-mentioned DC power supply applies module to the negative voltage that above-mentioned battery lead plate applies negative voltage.
Adopt the described substrate board treatment of first aspect, the described storage medium of described substrate attracting method in the 6th aspect and the tenth aspect, when electrostatic chuck absorption substrate, DC power supply applies negative voltage to battery lead plate.When on battery lead plate, applying negative voltage, become the glow discharge of the direct-current discharge that is not local from the periphery edge of the substrate of electrostatic chuck absorption or the discharge form that is configured in the reception room inner part around the substrate.Because the glow discharge energy does not concentrate on the discharge destination, deposit is not peeled off from the internal face of reception room and is dispersed, and does not therefore produce particle.In addition, when on battery lead plate, applying negative voltage, as with the current potential on the surface of the face of the opposite side of electrostatic chuck of substrate for negative.Under the electronegative situation of particle, this particle is subjected to the repulsive force that sends from substrate surface.Therefore, can prevent that particle is attached on the substrate surface.
Adopt described substrate board treatment of second aspect present invention and the described substrate attracting method in the 7th aspect, when electrostatic chuck broke away from substrate, DC power supply applied positive voltage to battery lead plate, and the value of this positive voltage is below the 1500V.Apply negative voltage to battery lead plate, when substrate is attracted on the electrostatic chuck, positive voltage is added on the battery lead plate, repulsive force acts between substrate and the electrostatic chuck, and substrate breaks away from from electrostatic chuck.At this moment, when the value of positive voltage is 1500V when following, it is the arc discharge of local direct-current discharge that the discharge form becomes hardly.Therefore, though when substrate when electrostatic chuck breaks away from, can prevent that also particle is attached on the substrate surface.
Adopt a third aspect of the present invention, the described substrate board treatment of fourth aspect and the described substrate attracting method of eighth aspect present invention and the 9th aspect, before applying positive voltage on the battery lead plate, the high frequency electric source that is connected with mounting table applies High frequency power to mounting table in DC power supply.When mounting table applies High frequency power, on mounting table, produce sheath.This sheath repels away electronegative particle from the top that is positioned in the substrate on the mounting table.Therefore, even produce particle in the reception room, can prevent reliably that also this particle is attached on the substrate surface.
Description of drawings
Fig. 1 is the sectional view of the general configuration of the substrate board treatment of expression embodiments of the present invention.
The figure of the relation of the value of the positive voltage that Fig. 2 applies to the battery lead plate of the substrate board treatment of Fig. 1 for expression and the granule number of counting.
Fig. 3 is the figure of expression as the order that applies of the High frequency power of the substrate attracting method of present embodiment and direct current power.
Symbol description
S handles the space; The W semiconductor wafer; 10 substrate board treatments; 11 chambers; 12 pedestals; 20 bottom high frequency electric sources; 23 battery lead plates; 24 DC power supply; 34 gases import spray head; 36 top high frequency electric sources; 42 electrostatic chucks
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.
The substrate board treatment of embodiments of the present invention at first, is described.
Fig. 1 is the sectional view of the general configuration of the substrate board treatment of expression present embodiment.This substrate board treatment carries out etch processes to the polysilicon layer that forms on the semiconductor wafer as substrate.
In Fig. 1, substrate board treatment 10 has for example accommodates that diameter is the chamber 11 (reception room) of semiconductor wafer (being designated hereinafter simply as " the wafer ") W of 300mm.In this chamber 11, dispose columniform pedestal 12 as the mounting table of mounting wafer.In substrate board treatment 10, utilize the side of the madial wall and the pedestal 12 of chamber 11, form the side exhaust line 13 that works as the stream that the gas of pedestal 12 tops is discharged outside chamber 11.Intermediate configurations in this side exhaust line 13 has baffle plate 14.The internal face of chamber 11 is by quartz or yittrium oxide (Y
2O
3) cover.
Rough vacuum blast pipe 15, main exhaust 16, DP and TMP constitute exhaust apparatus.Rough vacuum blast pipe 15 and main exhaust 16 are discharged by house steward 18 gas of reative cell 17 to the outside of chamber 11.Particularly, rough vacuum blast pipe 15 will be decompressed to low vacuum state from atmospheric pressure in the chamber 11; Main exhaust 16 and 15 co-operatings of rough vacuum blast pipe will be decompressed to the high vacuum state (for example below the 133Pa (1Torr)) of the pressure lower than low vacuum state from atmospheric pressure in the chamber 11.
Bottom high frequency electric source 20 is connected with pedestal 12 by adaptation (Matcher) 22.This bottom high frequency electric source 20 applies the High frequency power of regulation to pedestal 12.Like this, pedestal 12 plays the bottom electrode.In addition, adaptation 22 reduces the reflection of High frequency power from pedestal 12, makes High frequency power supply with the efficient of pedestal 12 for maximum.
The discoideus electrostatic chuck 42 that is made of the insulating properties parts that battery lead plate 23 is arranged in inside is configured in the top of pedestal 12.When pedestal 12 mounting wafer W, this wafer W is configured on the electrostatic chuck 42.Battery lead plate 23 is electrically connected with DC power supply 24.When applying negative High Level DC Voltage (hereinafter referred to as " negative voltage ") to battery lead plate 23, surface (hereinafter referred to as " back side ") in electrostatic chuck 42 sides of wafer W produces positive potential, and is producing negative potential with the surface (hereinafter referred to as " surface ") of electrostatic chuck 42 opposite sides.Like this, between the back side of battery lead plate 23 and wafer W, produce potential difference, Coulomb force or the Johsen Rahben power of utilizing this potential difference to cause, wafer W is adsorbed and remains on above the electrostatic chuck 42.
In addition, at the focusing ring 25 of the top of pedestal 12 layout circle ring-type, with surround absorption remain on wafer W above the electrostatic chuck 42 around.This focusing ring 25 exposes in handling space S, makes that plasma is brought together towards the surface of wafer W in this processing space S, improves the efficient of etch processes.
In addition, in the inside of pedestal 12, be arranged on the cryogen chamber 26 of the ring-type of circumferencial direction extension.From cooling unit (not shown), by cold-producing medium pipe arrangement 27, with the cold-producing medium of set point of temperature, for example this cryogen chamber 26 is supplied with in cooling water or Galden circulation, utilizes the temperature control of this cold-producing medium to adsorb the treatment temperature that remains on the wafer W above the electrostatic chuck 42.
Have a plurality of heat-conducting gas supply holes 28 on the part (hereinafter referred to as " adsorption plane ") of the wafer W that absorption keeps on electrostatic chuck 42.These a plurality of heat-conducting gas supply holes 28 are connected with heat-conducting gas supply unit (not shown) by heat-conducting gas feeding pipe 30.This heat-conducting gas supply unit will be supplied with the gap at the back side of adsorption plane and wafer W as helium (He) gas of heat-conducting gas by heat-conducting gas supply hole 28.Supply with the helium in gap at the back side of adsorption plane and wafer W, the heat of wafer W is passed to pedestal 12.
In addition, at a plurality of push rod pins 33 that dispose on the adsorption plane of pedestal 12 as the lifting pin of above electrostatic chuck 42, freely giving prominence to.These push rod pins 33 are connected with ball-screw (not shown) by motor, are transformed to rotatablely moving of straight-line motor by ball-screw and cause that these push rod pins are freely outstanding from adsorption plane.When for wafer W is carried out etch processes, on adsorption plane, adsorb when keeping wafer W, push rod pin 33 is housed in the pedestal 12.When the wafer W of taking out of from chamber 11 after carrying out etch processes, push rod pin 33 is outstanding above electrostatic chuck 42, makes wafer W leave pedestal 12, lifts upward.
Dispose gas at the top of chamber 11 in the mode relative and import spray head 34 with pedestal 12.Top high frequency electric source 36 imports spray head 34 by adaptation 35 and gas and is connected.Because top high frequency electric source 36 imports the High frequency power that spray head 34 applies regulation to gas, gas imports spray head 34 and plays upper electrode.The function of adaptation 35 is identical with the function of above-mentioned adaptation 22.
Gas imports the electrode support 39 that spray head 34 has top electrode plate 38 that a plurality of gas orifices 37 are arranged and this top electrode plate 38 of support that can freely install and remove.In addition, be provided with surge chamber 40, handle gas introduction tube 41 and be connected with this surge chamber 40 in the inside of this electrode support 39.Gas imports spray head 34, from handling gas introduction tube 41, with supplying with the processing gas of surge chamber 40, is that gas or chlorine are to add O in the gas at ozone for example
2The mist of inactive gas such as gas and He is via gas orifice 37, in the supply response chamber 17.
Be provided with moving into of wafer W and take out of mouthfuls 43 on the sidewall of chamber 11, this is moved into and takes out of mouthfuls 43 position with corresponding from the make progress height of wafer W of elevate a turnable ladder of pedestal 12 by push rod pin 33.Open and close this and move into and take out of mouthfuls 43 gate valve 44 moving into to take out of to install on mouthfuls 43.
As mentioned above, in the reative cell 17 of this substrate board treatment 10, by applying High frequency power to pedestal 12 and gas importing spray head 34, High frequency power is applied to pedestal 12 and gas to import on the processing space S between the spray head 34, can handle in the space S at this, will import the processing gas that spray head 34 supplies with from gas and become highdensity plasma, produce ion or free radical, utilize this ion etc., wafer W is carried out etch processes.
The action of each component parts of aforesaid substrate processing unit 10, the CPU of the control part (not shown) that is had by substrate board treatment 10 is according to the program control corresponding with etch processes.
In addition, the structure of aforesaid substrate processing unit 10 is identical with the structure of existing substrate board treatment.
The present inventor before the present invention, has studied the relation of the utmost point or the size and the generation number of particle of the direct voltage that applies to battery lead plate.In substrate board treatment 10, import spray head 34 or other delivery pipes (not shown) from gas, with a large amount of N
2Conductance is gone into reative cell 17, and utilizes DC power supply 24 to apply positive High Level DC Voltage (hereinafter referred to as " positive voltage ") and negative voltage to what battery lead plate 23 replaced.At this moment, the value of setting negative voltage is-3000V to change the value of positive voltage.In addition, wafer W is positioned on the pedestal 12.
At this moment, the inventor utilizes particle monitor (ISPM) to generation in reative cell 17, and the granule number that utilizes rough vacuum blast pipe 15 to discharge to the outside of chamber 11 is counted.In addition, the observation window (not shown) from the sidewall that is arranged on chamber 11 is observed from electrostatic chuck 42 or focusing ring 25 towards the quartz of the internal face that covers chamber 11 or the discharge form of yittrium oxide direct-current discharge.The discharge form of observing is as shown in table 1, and the granule number of measurement is shown in the curve of Fig. 2.
Table 1
| Negative voltage (V) | Positive voltage (V) | Discharge form when negative voltage applies | Discharge form when positive voltage applies |
| 3000 | 2000 | Aura | |
| 3000 | 2500 | Aura | |
| 3000 | 2000 | Aura | |
| 3000 | 1500 | Aura | Electric arc and aura |
| 3000 | 1000 | Aura | Electric arc and |
| 3000 | 500 | Aura | Electric arc and aura |
As shown in table 1, when reducing the value of positive voltage, the discharge form when positive voltage applies moves to the glow discharge that is not local direct-current discharge from the arc discharge for local direct-current discharge.Discharge form when in addition, negative voltage applies is is not the glow discharge of local direct-current discharge.Moreover, shown in the curve of Fig. 2, when reducing the value of positive voltage,, promptly in reative cell 17, produce granule number and reduce by the granule number that blast pipe 15 is discharged to the outside of chamber 11.Particularly, if the value of positive voltage is below the 1500V, then in reative cell 17, do not produce particle.
About the mechanism that the granule number that produces when reducing positive voltage value reduces, the observed result of present inventor's time discharge form according to positive voltage, class is pushed into the hypothesis of following explanation.
That is: when reducing positive voltage value, shift to glow discharge to the discharge form of the direct-current discharge of the internal face of chamber 11 from electrostatic chuck 42 grades.Because the energy of glow discharge does not concentrate on the internal face as the chamber 11 of discharge destination, therefore, do not peel off attached to the deposit on the internal face and to disperse.Therefore, the granule number that produces in reative cell 17 reduces.
In addition, the present inventor infers, because the discharge form when negative voltage applies is glow discharge, by applying negative voltage to battery lead plate 23, if wafer W is adsorbed on the electrostatic chuck 42, even produce direct-current discharge from the periphery edge of wafer W etc. to the internal face of chamber 11, also can be suppressed in the reative cell 17 and produce particle.
The present invention is based on the above opinion that obtains.
Below, the substrate attracting method of embodiments of the present invention is described.
The figure that Fig. 3 applies order for expression as the High frequency power and the direct current power of the substrate attracting method of present embodiment.
In Fig. 3, the wafer W that is formed with polysilicon layer on the surface is moved in the chamber 11, be positioned on the electrostatic chuck 42 of pedestal 12.When above-mentioned exhaust apparatus with chamber 11 in when atmospheric pressure is decompressed to high vacuum state, at first, top high frequency electric source 36 imports the High frequency power (top RF) that spray head 34 applies regulation to gas, behind the elapsed time T1, bottom high frequency electric source 20 applies the High frequency power (bottom RF) of regulation to pedestal 12.At this moment, High frequency power is applied to processing gas compartment S from gas importing spray head 34 and pedestal 12, handles in space S producing plasma from handling gas at this.Because electric charge is neutral in plasma.Electronics is identical with the cation number, but because electronics is lighter than cation, near the wafer W on the electrostatic chuck 42, electronics arrives wafer W fast.As a result, near wafer W generation as the sheath in the considerably less zone of electronics.Because sheath is the few zone of electronics, as all positively chargeds.In addition, general known particle is electronegative many.Therefore, sheath applies repulsive force to the particle towards wafer W, and this particle is slowed down, and repels away from the top of wafer W.
Behind the elapsed time T2, DC power supply 24 with negative voltage (HV: negative high voltage), for example-2500V is applied on the battery lead plate 23.At this moment, owing to produce positive potential, between the back side of battery lead plate 23 and wafer W, produce potential difference at the back side of wafer W.Coulomb force or the Johnsen Rahbek power of utilizing this potential difference to cause, with wafer W absorption remain on electrostatic chuck 42 above.When battery lead plate 23 applies negative voltage, owing to be glow discharge from the discharge form of the peripheral skirt of wafer W, energy does not concentrate on the internal face as the chamber 11 of discharge destination, does not therefore peel off attached to the deposit on the internal face and disperses.In addition, owing to produce negative potential on the surface of wafer W, electronegative particle is accepted repulsion from the surface of wafer W, is ostracised away from the top of wafer W.
Secondly, when carrying out etch processes on the polysilicon layer in wafer W, DC power supply 24 continues to apply negative voltage to battery lead plate 23.When etch processes finished, DC power supply 24 was with positive voltage (+HV: positive high voltage) for example+1200V is applied on the battery lead plate 23.Because the back side in wafer W produces positive potential, repulsion acts between wafer W and the battery lead plate 23, and wafer W breaks away from from electrostatic chuck 42.In addition and since when wafer W when electrostatic chuck 42 breaks away from, the value of the positive voltage that applies to battery lead plate 23 is+1200V, produces arc discharge (with reference to table 1) hardly, therefore, do not produce particle (with reference to Fig. 2) in reative cell 17.
Behind the elapsed time T3, DC power supply 24 stops to apply voltage to battery lead plate 23.
According to the order that applies of Fig. 3, when electrostatic chuck 42 absorption wafer W, DC power supply 24 applies negative voltage to battery lead plate 23.When battery lead plate 23 applies negative voltage, be glow discharge from the peripheral skirt of wafer W or the discharge form of focusing ring 25.Because the glow discharge energy does not concentrate on the discharge destination, so deposit do not disperse from peeling off as the internal face of chamber 11 of discharge destination, do not produce particle.In addition, when when battery lead plate 23 applies negative voltage, owing to produce negative potential on the surface of wafer W, electronegative particle is accepted repulsion from the surface of wafer W.Therefore, when electrostatic chuck 42 absorption wafer W, can prevent on the surface of particle attached to wafer W.
Applying in the order of Fig. 3, when electrostatic chuck 42 broke away from wafer W, DC power supply 24 applied positive voltage to battery lead plate 23, and this positive voltage value is+1200V.If the value of positive voltage is below 1500V, because the discharge form produces particle hardly as being the arc discharge of local direct-current discharge hardly in reative cell 17.Therefore, when wafer W when electrostatic chuck 42 breaks away from, can prevent on the surface of particle attached to wafer W.
In addition, applying in the order of Fig. 3, before battery lead plate 23 applied positive voltage, the bottom high frequency electric source 20 that is connected with pedestal 12 applied High frequency power to pedestal 12 in DC power supply 24.When High frequency power being added on the pedestal 12, on pedestal 12, produce sheath.This sheath repels away electronegative particle from the top of wafer W.Therefore, even in reative cell 17, produce particle, also can prevent reliably on the surface of this particle attached to wafer W.
In above-mentioned plasma processing apparatus 10, the substrate that carries out etch processes etc. is not limited to semiconductor wafer, can be the various substrates of use in LCD (Liquid Crystal Display LCD) or FPD (the dull and stereotyped flat-panel monitor of Flat Panel Display) wait or photomask, CD substrate, printed base plate etc.
In the storage medium feedway of program code of software that purpose of the present invention also can be by will storing the function that realizes the respective embodiments described above, the computer of this device (or CPU or MPU etc.) is read and is carried out the program code that leaves in the storage medium and realizes.
In this case, the program code self that utilization is read from storage medium is realized the function of each above-mentioned execution mode, and this program code constitutes the present invention with the storage medium that stores this program code.
In addition, storage medium as supplying with program code can use CDs such as Floopy (registered trade mark) dish, hard disk, photomagneto disk, CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW, tape, non-volatile memory card, ROM etc.Perhaps, can pass through the network download program code.
In addition, also comprise following situation: by carrying out the program code that computer is read, not only realize the function of the respective embodiments described above, and can be according to the indication of program code, the OS that works on computers (operating system) etc. carries out part or all of actual treatment, handles the function that realizes the respective embodiments described above by this.
Also comprise following situation: after the program code of reading from storage medium writes the expansion board of inserting computer or the memory of the functional expansion unit institute tool that is connected with computer, indication according to this program code, the CPU etc. that has expanded function in expansion board or the expanding element carries out part or all of actual treatment, handles the function that realizes the respective embodiments described above by this.
(embodiment)
Secondly, specifically describe embodiments of the invention.
Embodiment
At first, the wafer (hereinafter referred to as " particle wafer ") that the preparation grain count is used is moved in the chamber 11 of substrate board treatment 10, is positioned on the electrostatic chuck 42 of pedestal 12.Secondly,, apply the High frequency power of regulation by bottom high frequency electric source 20 to pedestal 12 again, in handling space S, produce plasma by importing the High frequency power that spray head 34 applies regulation to gas by top high frequency electric source 36.
Then, utilize DC power supply 24, apply-negative voltage of 2500V to battery lead plate 23, the particle chip sucking is attached on the electrostatic chuck 42, through behind the official hour, apply+positive voltage of 1200V to battery lead plate 23 by DC power supply 24, the particle wafer is broken away from from electrostatic chuck 42.
Secondly, 11 take out of this particle wafer from the chamber, move in the particle collector of self-scanning (self scan) mode.Then, the granule number of particle wafer surface per unit area is counted.The mean value of the granule number of record is 31.
Comparative example
Same with embodiment, the particle wafer is positioned on the electrostatic chuck 42, utilize top high frequency electric source 36 and bottom high frequency electric source 20, import the high frequency ceremony that spray head 34 and pedestal 12 apply regulation to gas respectively, in handling space S, produce plasma like this.
Then, apply+positive voltage of 2500V to battery lead plate 23 by DC power supply 24, the particle chip sucking is attached on the electrostatic chuck 42, through behind the official hour, apply-negative voltage of 1200V to battery lead plate 23 by DC power supply 24, the particle wafer is broken away from from electrostatic chuck 42.
Secondly, same with embodiment, the granule number of the per unit area of particle wafer surface is counted.The mean value of the granule number of record is 328.
Can find out from the result of comparing embodiment and comparative example,, when being attached to chip sucking on the electrostatic chuck 42, can prevent that particle is attached on the wafer surface when applying negative voltage to battery lead plate 23.
Claims (10)
1. substrate board treatment, be used for substrate is handled, it is characterized in that, has the reception room of accommodating described substrate, with be configured in this reception room and the mounting table of the described substrate of mounting, have the electrostatic chuck that has the insulating properties parts of battery lead plate to constitute by inside on the top of this mounting table, described battery lead plate is connected with DC power supply
When described electrostatic chuck adsorbed described substrate, described DC power supply applied negative voltage to described battery lead plate.
2. substrate board treatment as claimed in claim 1 is characterized in that, when described electrostatic chuck broke away from described substrate, described DC power supply applied positive voltage to described battery lead plate, and the value of described positive voltage is below 1500V.
3. substrate board treatment as claimed in claim 1 is characterized in that described mounting table is connected with high frequency electric source, and before described battery lead plate applied described negative voltage, described high frequency electric source applied High frequency power to described mounting table in described DC power supply.
4. substrate board treatment as claimed in claim 2 is characterized in that described mounting table is connected with high frequency electric source, and before described battery lead plate applied described negative voltage, described high frequency electric source applied High frequency power to described mounting table in described DC power supply.
5. as each described substrate board treatment in the claim 1～4, it is characterized in that, be formed with polysilicon layer, the described etch processes that is treated on the surface of described substrate.
6. substrate attracting method, be used for substrate board treatment, it is characterized in that, this substrate board treatment has the reception room of accommodating substrate and is configured in this reception room and the mounting table of the described substrate of mounting, has the electrostatic chuck that has the insulating properties parts of battery lead plate to constitute by inside on the top of this mounting table, described battery lead plate is connected with DC power supply
Described substrate attracting method comprises: when described electrostatic chuck adsorbed described substrate, described DC power supply applied step to the negative voltage that described battery lead plate applies negative voltage.
7. substrate attracting method as claimed in claim 6 is characterized in that, comprises that described DC power supply applies step to the positive voltage that described battery lead plate applies positive voltage when described electrostatic chuck breaks away from described substrate, and the value of described positive voltage is below the 1500V.
8. substrate attracting method as claimed in claim 6, it is characterized in that, be included in described DC power supply before described battery lead plate applies described negative voltage, the high frequency electric source that is connected with described mounting table applies step to the High frequency power that described mounting table applies High frequency power.
9. substrate attracting method as claimed in claim 7, it is characterized in that, be included in described DC power supply before described battery lead plate applies described negative voltage, the high frequency electric source that is connected with described mounting table applies step to the High frequency power that described mounting table applies High frequency power.
10. storage medium, it is characterized in that, it is the computer read/write memory medium that stores the program of running substrate adsorption method in computer, this substrate attracting method is implemented in substrate board treatment, this substrate board treatment has: accommodate the reception room of substrate and be configured in this reception room and the mounting table of the described substrate of mounting, the top of this mounting table has the electrostatic chuck that is made of the insulating properties parts that battery lead plate is arranged in inside, described battery lead plate is connected with DC power supply
This program comprises that when described electrostatic chuck adsorbed described substrate, described DC power supply applied module to the negative voltage that described battery lead plate applies negative voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006062884A JP5127147B2 (en) | 2006-03-08 | 2006-03-08 | Substrate adsorption / desorption method |
| JP2006062884 | 2006-03-08 |
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| CN101034679A true CN101034679A (en) | 2007-09-12 |
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| CNA2007100860633A Pending CN101034679A (en) | 2006-03-08 | 2007-03-08 | Substrate processing apparatus, substrate attracting method, and storage medium |
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| JP (1) | JP5127147B2 (en) |
| KR (1) | KR100853575B1 (en) |
| CN (1) | CN101034679A (en) |
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| CN105097423A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor and method of eliminating particle pollution in plasma reaction cavity |
| CN105990194A (en) * | 2015-03-17 | 2016-10-05 | 东京毅力科创株式会社 | A substrate treating method and a substrate processing device |
| CN107615460A (en) * | 2015-05-26 | 2018-01-19 | 株式会社日本制钢所 | Atomic layer growth device |
| CN108648995A (en) * | 2018-05-22 | 2018-10-12 | 徐亚琴 | A kind of semiconductor integrated circuit silicon wafer lithographic method |
| CN109107987A (en) * | 2017-06-22 | 2019-01-01 | 北京北方华创微电子装备有限公司 | A kind of blowing method |
| WO2022068423A1 (en) * | 2020-09-29 | 2022-04-07 | 长鑫存储技术有限公司 | Mounting jig for electrode plate of semiconductor device |
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| JP5875775B2 (en) * | 2011-03-30 | 2016-03-02 | 東京エレクトロン株式会社 | Substrate removal method and storage medium |
| KR102442285B1 (en) * | 2022-03-14 | 2022-09-13 | 에이피티씨 주식회사 | A System for Etching with a Plasma |
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| JPH1074734A (en) * | 1996-09-02 | 1998-03-17 | Toshiba Corp | Plasma treating device and manufacture of semiconductor device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105097423A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor and method of eliminating particle pollution in plasma reaction cavity |
| CN105097423B (en) * | 2014-05-12 | 2018-09-18 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor and the method for removing plasma reaction chamber particle contamination |
| CN105990194A (en) * | 2015-03-17 | 2016-10-05 | 东京毅力科创株式会社 | A substrate treating method and a substrate processing device |
| CN107615460A (en) * | 2015-05-26 | 2018-01-19 | 株式会社日本制钢所 | Atomic layer growth device |
| CN107615460B (en) * | 2015-05-26 | 2020-07-14 | 株式会社日本制钢所 | Atomic layer growth device |
| CN109107987A (en) * | 2017-06-22 | 2019-01-01 | 北京北方华创微电子装备有限公司 | A kind of blowing method |
| CN108648995A (en) * | 2018-05-22 | 2018-10-12 | 徐亚琴 | A kind of semiconductor integrated circuit silicon wafer lithographic method |
| CN108648995B (en) * | 2018-05-22 | 2021-03-19 | 深圳市盛鸿运科技有限公司 | Silicon wafer etching method for semiconductor integrated circuit |
| WO2022068423A1 (en) * | 2020-09-29 | 2022-04-07 | 长鑫存储技术有限公司 | Mounting jig for electrode plate of semiconductor device |
| US11348820B2 (en) | 2020-09-29 | 2022-05-31 | Changxin Memory Technologies, Inc. | Installation fixture for electrode plate of semiconductor equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070092104A (en) | 2007-09-12 |
| KR100853575B1 (en) | 2008-08-21 |
| JP5127147B2 (en) | 2013-01-23 |
| JP2007242870A (en) | 2007-09-20 |
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