CN101030773A - Safety circuit containing metal oxide semiconductor field effector - Google Patents
Safety circuit containing metal oxide semiconductor field effector Download PDFInfo
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- CN101030773A CN101030773A CN 200710063428 CN200710063428A CN101030773A CN 101030773 A CN101030773 A CN 101030773A CN 200710063428 CN200710063428 CN 200710063428 CN 200710063428 A CN200710063428 A CN 200710063428A CN 101030773 A CN101030773 A CN 101030773A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims description 85
- 150000004706 metal oxides Chemical class 0.000 title claims description 85
- 239000004065 semiconductor Substances 0.000 title claims description 85
- 239000012636 effector Substances 0.000 title 1
- 230000005669 field effect Effects 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 20
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 101100472155 Trypanosoma brucei brucei REL2 gene Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 101001034321 Mus musculus Lactadherin Proteins 0.000 description 4
- 239000012467 final product Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
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Abstract
The invention is used for protecting the MOSFET used as switch unit from breakdown at a certain working voltage range in a condition of high-voltage. The invention comprises the MOSFT and its protecting circuit. The protecting circuit comprises: first and second divider circuits and the first switch circuit located between the input of the MOSFET and the constant low level point; third divider circuit and second switch circuit serially connected to the joint point between the first and second divider circuits or the joint point between the second divider circuit and the first switch circuit, and the constant low level point.
Description
Technical field
The present invention relates to the Analog Circuit Design technology, specifically, relate to the safety circuit of a kind of MOSFET (Metal-Oxide-Semicoductor Field Effect Transistor, metal oxide semiconductor field effect tube) switching device.
Background technology
In present Analog Circuit Design, for the switch mosfet device, according to different situations, if supply voltage surpasses 3.3V or 5V, that just can be referred to as hyperbaric environment.In the high pressure design of analog circuit, the special process manufacturing high-voltage MOSFET devices that adopt are realized design more,, produced high-voltage MOSFET device is applied to the operational environment of various high-frequency and low-consumptions though still having advantages such as switching characteristic is good, low in energy consumption, but this designing technique technology cost height, the high-voltage MOSFET device versatility that design processes is poor, cause being difficult in the commercial Application producing in batches, again because need be at different applied environments, carry out different designs and processing, cause inefficiency and with high costs.
Summary of the invention
The technical issues that need to address of the present invention provide a kind of safety circuit that comprises metal oxide semiconductor field effect tube; in order in hyperbaric environment; protection works in certain voltage range as the MOSFET of switching device; and do not worry its breakdown problem; prolong the life-span of switch mosfet device, reduce technological design and production cost.
In order to solve the problems of the technologies described above, the invention provides a kind of safety circuit that comprises metal oxide semiconductor field effect tube, comprise shielded metal oxide semiconductor field effect tube and protective circuit thereof, wherein, described protective circuit comprises first bleeder circuit, second bleeder circuit, the 3rd bleeder circuit, and first switching circuit and second switch circuit;
First bleeder circuit, second bleeder circuit and the form of first switching circuit to connect, be connected between the input and constant electronegative potential point of protected metal oxide semiconductor field effect tube, the contact A2 of first bleeder circuit and second bleeder circuit links to each other with the grid of described shielded metal oxide semiconductor field effect tube;
One end of the 3rd bleeder circuit links to each other with the contact B2 of first switching circuit with second bleeder circuit, perhaps links to each other with the contact A2 of second bleeder circuit with first bleeder circuit; The other end links to each other with the second switch circuit by contact C2;
First switching circuit comprises a control end and two links, this control end is connected with the signal of opening of the protected metal oxide semiconductor field effect tube conducting of control, a wherein end of two links links to each other with contact B2, the other end links to each other with contact D2, this opens signal when effective, described two link conductings;
The second switch circuit comprises a control end and two links, this control end is connected with the pass signal that the protected metal oxide semiconductor field effect tube of control ends, a wherein end of two links links to each other with contact C2, the other end links to each other with contact D2, when this pass signal is effective, described two link conductings;
During the first switching circuit conducting, the second switch circuit disconnects, and after the dividing potential drop, the voltage of contact A2 is the safe conducting voltage of shielded metal oxide semiconductor field effect tube;
During the second switch circuit turn-on, first switching circuit disconnects, and after the dividing potential drop, the voltage of contact A2 is the safe cut-ff voltage of shielded metal oxide semiconductor field effect tube.
Further, described shielded metal oxide semiconductor field effect tube is the P type, and described contact D2 links to each other with described constant electronegative potential point;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type, and described contact D2 links to each other with the input of described shielded metal oxide semiconductor field effect tube.
Further, the sectional pressure element of described first bleeder circuit, second bleeder circuit and the 3rd bleeder circuit is one or more resistance; Perhaps, the sectional pressure element of described first bleeder circuit, second bleeder circuit and the 3rd bleeder circuit is one or more metal oxide semiconductor field effect tubes.
Further, a plurality of resistance in described first bleeder circuit connect with the series connection form; A plurality of resistance in described second bleeder circuit connect with the series connection form; A plurality of resistance in described the 3rd bleeder circuit connect with the series connection form.
Further, described first bleeder circuit contains a P-type mos field effect transistor;
Described shielded metal oxide semiconductor field effect tube is the P type:
P-type mos field effect transistor in described first bleeder circuit, its source electrode and substrate connect the input of described shielded metal oxide semiconductor field effect tube, and its grid and drain electrode meet described contact A2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
P-type mos field effect transistor in described first bleeder circuit, its source electrode and substrate are connected on the described contact A2, and its drain electrode and substrate are connected on the described constant electronegative potential point.
Further, described second bleeder circuit contains a P-type mos field effect transistor;
Described shielded metal oxide semiconductor field effect tube is the P type:
P-type mos field effect transistor in described second bleeder circuit, its source electrode and substrate meet described contact A2, and its grid and drain electrode meet described contact B2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
P-type mos field effect transistor in described second bleeder circuit, its source electrode and substrate meet described contact B2, and its grid and drain electrode meet described contact A2.
Further, described second bleeder circuit contains a P-type mos field effect transistor string that is made of more than one P-type mos field effect transistor that connects with the diode connected mode;
Described shielded metal oxide semiconductor field effect tube is the P type:
The source electrode and the substrate of the metal oxide semiconductor field effect tube of described P-type mos field effect transistor string one end in described second bleeder circuit are connected on the described contact A2, and the grid of the metal oxide semiconductor field effect tube of the other end and drain electrode are connected on the described contact B2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
The grid and the drain electrode of the metal oxide semiconductor field effect tube of described P-type mos field effect transistor string one end in described second bleeder circuit are connected on the described contact A2, and the source electrode of the metal oxide semiconductor field effect tube of the other end and substrate are connected on the described contact B2.
Further, described the 3rd bleeder circuit contains a N type metal oxide semiconductor field effect transistor;
Described shielded metal oxide semiconductor field effect tube is the P type:
The grid and the drain electrode of the N type metal oxide semiconductor field effect transistor in described the 3rd bleeder circuit are connected on the described contact B2, perhaps are connected on the described contact A2; Source electrode and substrate are connected on the described contact C2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
The grid of the N type metal oxide semiconductor field effect transistor in described the 3rd bleeder circuit and drain electrode are connected on the described contact C2; Source electrode and substrate are connected on the described contact B2, perhaps are connected on the described contact A2.
Further, described the 3rd bleeder circuit contains a N type metal oxide semiconductor field effect transistor string that is made of more than one N type metal oxide semiconductor field effect transistor that connects with the diode connected mode;
Described shielded metal oxide semiconductor field effect tube is the P type:
The grid and the drain electrode of the metal oxide semiconductor field effect tube of N type metal oxide semiconductor field effect transistor string one end in described the 3rd bleeder circuit are connected on the described contact B2, perhaps are connected on the described contact A2; The source electrode of the metal oxide semiconductor field effect tube of the other end and substrate are connected on the described contact C2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
The grid and the drain electrode of the metal oxide semiconductor field effect tube of described N type metal oxide semiconductor field effect transistor string one end in the 3rd bleeder circuit are connected on the described contact C2, the source electrode of the metal oxide semiconductor field effect tube of the other end and substrate are connected on the described contact B2, perhaps are connected on the described contact A2.
Further, described first switching circuit is a N type metal oxide semiconductor field effect transistor, and its grid connects the described signal of opening, and its source electrode and substrate are connected on the described contact D2, and its drain electrode is connected on the described contact B2;
Described second switch circuit is a N type metal oxide semiconductor field effect transistor, and its grid connects described pass signal, and its source electrode and substrate are connected on the described contact D2, and its drain electrode is connected on the described contact C2.
The present invention increases protective circuit and applies in the hyperbaric environment on the switch mosfet device; directly replace the high-voltage MOSFET switching device in the present technology; the design technology and the production technology of circuit have been simplified; only need variation a little to get final product at different applied environments; efficient is high and with low cost; guaranteed that simultaneously MOSFET is operated under the normal operating state, avoided MOSFET breakdown, thereby prolonged the life-span of switch mosfet device.
Description of drawings
Fig. 1 is the circuit diagram that adopts the high-voltage MOSFET switching device under the hyperbaric environment;
Fig. 2 is an embodiment of the invention structural representation;
Fig. 3 is the embodiments of the invention schematic diagrames;
Fig. 4 is the embodiment of the invention schematic diagram that protected switch mosfet device is the P type;
Fig. 5 is the embodiment of the invention schematic diagram that protected switch mosfet device is the N type;
Fig. 6 is the structural representation of another embodiment of the present invention.
Embodiment
The present invention will be further described in detail below in conjunction with drawings and the specific embodiments.
In present analog circuit high pressure design, adopt special process to make high-voltage MOSFET device more and realize design, Fig. 1 shows the applied environment of high-voltage MOSFET switching device.Wherein the ON/OFF signal connects the grid of high-voltage MOSFET switching device 9, and input AVDD connects the source electrode of high-voltage MOSFET switching device 9, and output OUT connects the drain electrode of high-voltage MOSFET switching device 9.Though high-voltage MOSFET device can satisfy industrial needs, its design, production cost height, versatility is poor, causes being difficult in the commercial Application producing inefficiency in batches.Except high-voltage MOSFET switching device herein, other MOSFET device all refers to the metal oxide semiconductor field effect tube that the standard CMOS production technology realizes herein, and following content illustrates with reference to this.
Shielded switch mosfet device promptly can be the P type, also can be the N type.Referring to Fig. 2, shielded switch mosfet device is an example with the P type promptly, and whole safety circuit comprises shielded operating circuit 21 and protective circuit 22.Wherein:
Opening signal and closing signal among Fig. 2 when opening signal when effective, closed invalidating signal; When the pass signal is effective, open invalidating signal.Also promptly open signal and close signal inverted signal each other, the conducting of the P type switch mosfet device in the Control work circuit 21 or end.Can be understood as, at most only have one at synchronization first switching circuit 224 and second switch circuit 225 and be in effective status, control the conducting of shielded P type switch mosfet device or end.Above-mentioned constant electronegative potential point is generally selected ground connection with it in practice.When opening signal or close signal work, the working portion of protective circuit 22 all is under the normal state, can be because of overtension, and perhaps electric current is excessive and other is former thereby short circuit occurs, situation such as open circuit.
When opening signal when effective, connect by first bleeder circuit 221, second bleeder circuit 222 and first switching circuit 224 between input AVDD and the constant electronegative potential point, through the dividing potential drop of first bleeder circuit 221, second bleeder circuit 222 and first switching circuit 224, the voltage difference of contact A2 and input AVDD surpasses the threshold voltage V of the P type switch mosfet device in the operating circuit 21
GSTHThereby this P type switch mosfet device is in conducting state, and the output voltage of output OUT is the voltage of input AVDD.
When the pass signal is effective, connect by first bleeder circuit 221, second bleeder circuit 222, the 3rd bleeder circuit 223 and second switch circuit 225 between input AVDD and the constant electronegative potential point, through the dividing potential drop of first bleeder circuit 221, second bleeder circuit 222, the 3rd bleeder circuit 223 and second switch circuit 225, the voltage difference of contact A2 and input AVDD is lower than the threshold voltage V of the P type switch mosfet device in the operating circuit 21
GSTHThereby this P type switch mosfet device ends.
Fig. 3 shows an Application Example of the present invention, each several part in the wherein each bleeder circuit mainly is made of resistance, two switching circuits mainly are made of N type MOSFET device, and providing constant low-voltage by ground connection bringing in, the switch mosfet device in the operating circuit 31 is an example with P type switch mosfet device MP39; First bleeder circuit 321 in the protective circuit 32 contains a resistance R 31, the second bleeder circuits 322 and contains a resistance R 32, the three bleeder circuits 323 and contain a resistance R 33, the first switching circuits 324 and comprise a N type MOSFET device MN34; Second switch circuit 325 comprises a N type MOSFET device MN35.
One of resistance R 31 terminates on the input AVDD in first bleeder circuit, and the other end is connected with the resistance R 32 in second bleeder circuit by contact A2, and the other end of resistance R 32 is connected on the contact B3.The grid of N type MOSFET device MN34 in first switching circuit 324 connects out signal, and drain electrode is connected on the contact B3, and source electrode and substrate are by contact D3 ground connection.Resistance R 33 1 terminates on the contact B3 in the 3rd bleeder circuit 323, and the other end is connected on the contact C3.In the second switch circuit 325, the drain electrode of N type MOSFET device MN35 is connected on the contact C3, and grid connects the pass signal, and source electrode and substrate are also by contact D3 ground connection.The grid of P type switch mosfet device MP39 in the operating circuit 31 is connected on the contact A3, and source electrode is connected on the AVDD, and drain electrode is connected on the output OUT.
Opening signal or closing under the control of signal, the voltage between contact A3 and the input AVDD can satisfy switch mosfet device normally or ends, and can be not breakdown or other situation occurs.The resistance size of each resistance in the circuit is according to the input voltage V of input AVDD
DDDifference and difference.
Open signal and close signal inverted signal each other; when opening signal when effective; N type MOSFET device MN34 conducting; N type MOSFET device MN35 ends simultaneously; connect by first bleeder circuit 321, second bleeder circuit 322 and first switching circuit 324 between input AVDD and the constant electronegative potential point; the voltage of contact A3 is the conducting voltage of shielded P type switch mosfet device MP39; make shielded P type switch mosfet device MP39 conducting, the output voltage of output OUT is the magnitude of voltage V of input AVDD
DD
When the pass signal is effective, N type MOSFET device MN35 conducting, N type MOSFET device MN34 ends simultaneously.Connect by first bleeder circuit 321, second bleeder circuit 322, the 3rd bleeder circuit 323 and second switch circuit 325 between input AVDD and the constant electronegative potential point; the voltage of contact A3 is the cut-ff voltage of shielded P type switch mosfet device MP39, and shielded P type switch mosfet device MP39 is ended.
In the present embodiment, suppose the input voltage V of input AVDD
DDBe 10V, the conducting when voltage difference of P type switch mosfet device MP39 between its grid and source electrode in the operating circuit 31 is about 1V ends when voltage difference is about 0.4V.Therefore the proportionate relationship of resistance R 31 and resistance R 32 is as long as guarantee to open signal when effective, and the magnitude of voltage that A3 is ordered is that 9V gets final product.The resistance that also is resistance R 32 is 9 times of resistance R 31 resistances, can realize the P type switch mosfet device MP39 conducting in the operating circuit 31, output OUT output 10V voltage.Equally, when the pass signal is effective, as long as the resistance sum of resistance R 32 and resistance R 33 is 24 times of resistance R 31, can realize that the voltage difference of P type switch mosfet device MP39 between its grid and source electrode in the operating circuit 31 is 0.4V, thereby P type switch mosfet device MP39 ends.In this case, the resistance of resistance R 31, resistance R 32 and resistance R 33 can be respectively 1K Ω, 9K Ω and 15K Ω, certainly, the resistance of these resistance can also be to satisfy other numerical value of above-mentioned two proportionate relationships, but these resistance yet will be according to concrete actual conditions, by selecting suitable resistance number and resistance, guarantee to be subjected to the N type MOSFET device of ON/OFF signal controlling to be operated within its trouble free service voltage range separately, and breakdown other situation that waits can not occur.
The resistance of each resistance in above-mentioned resistance R 31, resistance R 32 and the resistance R 33 is all represented resistance on corresponding this section circuit, resistance such as resistance R 31, resistance in the representative graph 3 between AVDD end and the contact A3, resistance R 32 is represented the resistance between contact A3 and the contact B3, and the rest may be inferred for other.Also promptly mean resistance R 31, also can be with other a plurality of resistance, replace with multiple connected mode, carry out equivalent substitute by several resistance with the form of series connection such as resistance R 31, as long as the resistance of the equivalent resistance on this section circuit equates with the resistance of resistance R 31 between AVDD end and the contact A3.Resistance R 32 and resistance R 33 are too.
Corresponding to different high-voltage applications environment; the supply voltage difference of ifs circuit; sectional pressure element in each bleeder circuit of present embodiment; the ratio that also is the resistance of resistance may be different; but the overall principle is the resistance of these resistance; all can be under the effect of ON/OFF signal, realize high voltage source is divided power domain, thereby guarantee that shielded switch mosfet device can work in the safe voltage scope.
Fig. 4 and Fig. 5 show the Application Example schematic diagram of the present invention that protected switch mosfet device is P type and N type respectively, are that example describes with the P type.Referring to Fig. 4, provide the input voltage V of input AVDD
DDMagnitude of voltage, such as being 8V, constant electronegative potential point is also selected ground connection, and selecting the switch mosfet device in the operating circuit 41 simultaneously is P type switch mosfet device MP49, the conducting when voltage difference between its grid and the source electrode is about 1V ends when voltage difference is about 0.4V.Wherein first bleeder circuit 421 in the protective circuit 42 comprises a P type MOSFET device MP48, and second bleeder circuit 422 comprises seven P type MOSFET device MP47～MP41; The 3rd bleeder circuit 423 comprises three N type MOSFET device MN41～MN43; First switching circuit 424 comprises a N type MOSFET device MN44; Second switch circuit 425 also comprises a N type MOSFET device MN45.
In first bleeder circuit and second bleeder circuit, P type MOSFET device MP41～MP48 adopts the diode connected mode to connect, constitute a P type MOSFET string, the grid and the drain electrode that are P type MOSFET device MP48 are connected on the source electrode of P type MOSFET device MP47, the grid of P type MOSFET device MP47 and drain electrode are connected on the source electrode of P type MOSFET device MP46, Using such method connects, and is connected on the source electrode of P type MOSFET device MP41 until grid and the drain electrode of P type MOSFET device MP42.In addition, the source electrode of P type MOSFET device MP48 is connected on the input AVDD, and grid and the drain electrode of P type MOSFET device MP41 are connected on the contact B4.Contact A4 is between the source electrode of the drain electrode of P type MOSFET device MP48 and P type MOSFET device MP47.Each substrate of P type MOSFET device MP41～MP48 all is connected on the source electrode separately.
In the 3rd bleeder circuit, N type MOSFET device MN41～MN43 also adopts the diode connected mode to connect, constitute a N type MOSFET string, the grid and the drain electrode that are N type MOSFET device MN42 are connected on the source electrode of N type MOSFET device MN41, and the grid of N type MOSFET device MN43 and drain electrode are connected on the source electrode of N type MOSFET device MN42.In addition, grid and the drain electrode of N type MOSFET device MN41 are connected on the contact B4, and the source electrode of N type MOSFET device MN43 is connected on the contact C4.Each substrate of N type MOSFET device MN41～MN43 also all is connected on the source electrode separately.
In first switching circuit 424, the grid of N type MOSFET device MN44 meets out signal Pwd, and drain electrode is connected on the contact B4, and source electrode and substrate are by contact D4 ground connection.In the second switch circuit 425, the grid of N type MOSFET device MN45 connects and closes signal Pwdb, and drain electrode is connected on the node C4, and source electrode and substrate are also by contact D4 ground connection.In the operating circuit 41, the grid of P type switch mosfet device is connected on the contact A4, and source electrode and substrate meet input AVDD, and drain electrode meets output OUT.
Open signal Pwd and close signal Pwdb inverted signal each other, when opening signal Pwd when effective, N type MOSFET device MN44 conducting, N type MOSFET device MN45 ends simultaneously.Connect by first bleeder circuit 421, second bleeder circuit 422 and first switching circuit 424 between input AVDD and the constant electronegative potential point, the voltage difference of contact A4 and input AVDD surpasses the threshold voltage V of the P type switch mosfet device in the operating circuit 41
GSTH, reach about 1V, thereby this P type switch mosfet device being in conducting state, the output voltage of output OUT is the magnitude of voltage V of input AVDD
DD
When pass signal Pwdb is effective, N type MOSFET device MN45 conducting, N type MOSFET device MN44 ends simultaneously.Connect by first bleeder circuit 421, second bleeder circuit 422, the 3rd bleeder circuit 423 and second switch circuit 425 between input AVDD and the constant electronegative potential point, the voltage difference of contact A4 and input AVDD is lower than the threshold voltage V of the P type switch mosfet device in the operating circuit 41
GSTH, only be about 0.4V, thereby this P type switch mosfet device ends.
In the main present embodiment of forming with the MOSFET device, shielded switch mosfet device is in the safe voltage scope in operating circuit 41, guarantee also that simultaneously each P type in the protective circuit 42 or N type MOSFET device also are operated within separately the safe voltage scope, and situations such as puncture can not take place; Simultaneously; the quantity of the MOSFET device in the protective circuit 42 will guarantee out signal or close signal when effective; switch mosfet device in the operating circuit 41 effectively conducting or by and be in the trouble free service voltage range; therefore can not be unrestrictedly many or unrestrictedly few; need select suitable model and quantity for use according to actual conditions, guarantee the partial pressure device trouble free service in the protective circuit.
Protected switch mosfet device be the P type should be with in the middle of the embodiment, the number of the number of the P type MOSFET device in second bleeder circuit and the N type MOSFET device in the 3rd bleeder circuit can be different in different hyperbaric environments.The supply voltage of ifs circuit is lower, and the number of the MOSFET device in second bleeder circuit and the 3rd bleeder circuit reduces accordingly so, in some cases, even can be one; The supply voltage of ifs circuit is higher, and the number of the MOSFET device in second bleeder circuit and the 3rd bleeder circuit also can increase accordingly so.Even but in different hyperbaric environments, core concept still adopt to be divided the method for power domain to high power supply voltage, shielded switch mosfet device is operated in the voltage domain of oneself, only bears less voltage, thus be protected exempt from breakdown.
Fig. 5 is the embodiment of the invention schematic diagram that protected switch mosfet device is the N type, with respect to the protected switch mosfet device shown in Figure 4 situation that is the P type, mainly be that the connected mode of the protective circuit characteristics according to N type MOSFET are changed, specifically be connected to: the source electrode and the grid of the N type switch mosfet device in first switching circuit, and the source electrode and the substrate of the N type switch mosfet device in the second switch circuit, all link to each other with input AVDD by contact D5; Open on the grid that signal is connected on first switching circuit, close signal and be connected on the grid of second switch circuit; The drain electrode of first switching circuit is connected on the contact B5, and the drain electrode of second switch circuit links to each other with contact C5; Three N type switch mosfet devices that constitute the 3rd bleeder circuit connect and compose a N type MOSFET string with the diode connected mode, grid is not connected to that inner end of this N type MOSFET string with drain electrode and links to each other with contact C5, and the source electrode of the other end links to each other with contact B5 with substrate; Eight P type switch mosfet devices that constitute first bleeder circuit and second bleeder circuit also connect and compose a P type MOSFET string with the diode connected mode; The grid of shielded N type switch mosfet device links to each other with contact A5, and source electrode and substrate connect output OUT, grounded drain.When opening signal or close signal when effective, the concrete course of work can be that the explanation of P type MOSFET situation is understood according to shielded switching device.
Compared with prior art, the present invention is by adopting the method for dividing power domain to high input voltage, to different high power supply voltage situations, by selecting the sectional pressure element of different numbers for use, the switch mosfet device is operated in the safe voltage scope of oneself, only bear fraction voltage, reduce the possibility that high input voltage punctures the switch mosfet device, avoid adopting special process design and processing high-voltage MOSFET switching device simultaneously, improved efficient, reduced cost.
Others skilled in the art should be understood that, key of the present invention is to adopt the method for dividing power domain to realize dividing potential drop, thereby guarantee that the switch mosfet device is operated under the safe voltage state, avoid breakdown, but not the concrete selection of circuit elements device or interconnected relationship.Distortion or conversion on this basis also should drop in protection scope of the present invention simultaneously.
As an example, Fig. 6 shows a distortion of safety circuit shown in Figure 2, and is the same with Fig. 2, is that the P type describes with shielded switch mosfet device.The connected mode that is changed to the 3rd protective circuit 623 in the protective circuit 62 wherein, wherein the 3rd protective circuit 623 was connected on that end of contact B2 originally, and reconfiguration is to contact A6 in Fig. 6.The method of attachment of other parts does not change in the circuit, and first bleeder circuit 621, second bleeder circuit 622 and first switching circuit 624 still are connected input AVDD and decide very much between the electronegative potential point with the series connection form; The second switch circuit is connected to the link in the protective circuit 62, also remains an end and is connected on the constant electronegative potential point by contact D6, on the contact C6 that the other end is connected on; Shielded switch mosfet device remains grid and is connected on the contact A6, and source electrode and substrate meet input AVDD, and drain electrode meets output OUT.The variation of this connected mode, the variation that has also brought the components and parts of each part inside of circuit is such as the model of components and parts, number change etc.
Claims (10)
1, a kind of safety circuit that comprises metal oxide semiconductor field effect tube, comprise shielded metal oxide semiconductor field effect tube and protective circuit thereof, it is characterized in that, described protective circuit comprises first bleeder circuit, second bleeder circuit, the 3rd bleeder circuit, and first switching circuit and second switch circuit;
First bleeder circuit, second bleeder circuit and the form of first switching circuit to connect, be connected between the input and constant electronegative potential point of protected metal oxide semiconductor field effect tube, the contact A2 of first bleeder circuit and second bleeder circuit links to each other with the grid of described shielded metal oxide semiconductor field effect tube;
One end of the 3rd bleeder circuit links to each other with the contact B2 of first switching circuit with second bleeder circuit, perhaps links to each other with the contact A2 of second bleeder circuit with first bleeder circuit; The other end links to each other with the second switch circuit by contact C2;
First switching circuit comprises a control end and two links, this control end is connected with the signal of opening of the protected metal oxide semiconductor field effect tube conducting of control, a wherein end of two links links to each other with contact B2, the other end links to each other with contact D2, this opens signal when effective, described two link conductings;
The second switch circuit comprises a control end and two links, this control end is connected with the pass signal that the protected metal oxide semiconductor field effect tube of control ends, a wherein end of two links links to each other with contact C2, the other end links to each other with contact D2, when this pass signal is effective, described two link conductings;
During the first switching circuit conducting, the second switch circuit disconnects, and after the dividing potential drop, the voltage of contact A2 is the safe conducting voltage of shielded metal oxide semiconductor field effect tube;
During the second switch circuit turn-on, first switching circuit disconnects, and after the dividing potential drop, the voltage of contact A2 is the safe cut-ff voltage of shielded metal oxide semiconductor field effect tube.
2, circuit as claimed in claim 1 is characterized in that, described shielded metal oxide semiconductor field effect tube is the P type, and described contact D2 links to each other with described constant electronegative potential point;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type, and described contact D2 links to each other with the input of described shielded metal oxide semiconductor field effect tube.
3, circuit as claimed in claim 1 is characterized in that, the sectional pressure element of described first bleeder circuit, second bleeder circuit and the 3rd bleeder circuit is one or more resistance; Perhaps, the sectional pressure element of described first bleeder circuit, second bleeder circuit and the 3rd bleeder circuit is one or more metal oxide semiconductor field effect tubes.
4, circuit as claimed in claim 3 is characterized in that, a plurality of resistance in described first bleeder circuit connect with the series connection form; A plurality of resistance in described second bleeder circuit connect with the series connection form; A plurality of resistance in described the 3rd bleeder circuit connect with the series connection form.
5, circuit as claimed in claim 3 is characterized in that, described first bleeder circuit contains a P-type mos field effect transistor;
Described shielded metal oxide semiconductor field effect tube is the P type:
P-type mos field effect transistor in described first bleeder circuit, its source electrode and substrate connect the input of described shielded metal oxide semiconductor field effect tube, and its grid and drain electrode meet described contact A2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
P-type mos field effect transistor in described first bleeder circuit, its source electrode and substrate are connected on the described contact A2, and its drain electrode and substrate are connected on the described constant electronegative potential point.
6, circuit as claimed in claim 3 is characterized in that, described second bleeder circuit contains a P-type mos field effect transistor;
Described shielded metal oxide semiconductor field effect tube is the P type:
P-type mos field effect transistor in described second bleeder circuit, its source electrode and substrate meet described contact A2, and its grid and drain electrode meet described contact B2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
P-type mos field effect transistor in described second bleeder circuit, its source electrode and substrate meet described contact B2, and its grid and drain electrode meet described contact A2.
7, circuit as claimed in claim 3 is characterized in that, described second bleeder circuit contains a P-type mos field effect transistor string that is made of more than one P-type mos field effect transistor that connects with the diode connected mode;
Described shielded metal oxide semiconductor field effect tube is the P type:
The source electrode and the substrate of the metal oxide semiconductor field effect tube of described P-type mos field effect transistor string one end in described second bleeder circuit are connected on the described contact A2, and the grid of the metal oxide semiconductor field effect tube of the other end and drain electrode are connected on the described contact B2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
The grid and the drain electrode of the metal oxide semiconductor field effect tube of described P-type mos field effect transistor string one end in described second bleeder circuit are connected on the described contact A2, and the source electrode of the metal oxide semiconductor field effect tube of the other end and substrate are connected on the described contact B2.
8, circuit as claimed in claim 3 is characterized in that, described the 3rd bleeder circuit contains a N type metal oxide semiconductor field effect transistor;
Described shielded metal oxide semiconductor field effect tube is the P type:
The grid and the drain electrode of the N type metal oxide semiconductor field effect transistor in described the 3rd bleeder circuit are connected on the described contact B2, perhaps are connected on the described contact A2; Source electrode and substrate are connected on the described contact C2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
The grid of the N type metal oxide semiconductor field effect transistor in described the 3rd bleeder circuit and drain electrode are connected on the described contact C2; Source electrode and substrate are connected on the described contact B2, perhaps are connected on the described contact A2.
9, circuit as claimed in claim 3 is characterized in that, described the 3rd bleeder circuit contains a N type metal oxide semiconductor field effect transistor string that is made of more than one N type metal oxide semiconductor field effect transistor that connects with the diode connected mode;
Described shielded metal oxide semiconductor field effect tube is the P type:
The grid and the drain electrode of the metal oxide semiconductor field effect tube of N type metal oxide semiconductor field effect transistor string one end in described the 3rd bleeder circuit are connected on the described contact B2, perhaps are connected on the described contact A2; The source electrode of the metal oxide semiconductor field effect tube of the other end and substrate are connected on the described contact C2;
Perhaps, described shielded metal oxide semiconductor field effect tube is the N type:
The grid and the drain electrode of the metal oxide semiconductor field effect tube of described N type metal oxide semiconductor field effect transistor string one end in the 3rd bleeder circuit are connected on the described contact C2, the source electrode of the metal oxide semiconductor field effect tube of the other end and substrate are connected on the described contact B2, perhaps are connected on the described contact A2.
10, circuit as claimed in claim 1 is characterized in that, described first switching circuit is a N type metal oxide semiconductor field effect transistor, and its grid connects the described signal of opening, and its source electrode and substrate are connected on the described contact D2, and its drain electrode is connected on the described contact B2;
Described second switch circuit is a N type metal oxide semiconductor field effect transistor, and its grid connects described pass signal, and its source electrode and substrate are connected on the described contact D2, and its drain electrode is connected on the described contact C2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710063428A CN100578936C (en) | 2007-01-31 | 2007-01-31 | Safety circuit containing metal oxide semiconductor field effector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710063428A CN100578936C (en) | 2007-01-31 | 2007-01-31 | Safety circuit containing metal oxide semiconductor field effector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101030773A true CN101030773A (en) | 2007-09-05 |
| CN100578936C CN100578936C (en) | 2010-01-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710063428A Expired - Fee Related CN100578936C (en) | 2007-01-31 | 2007-01-31 | Safety circuit containing metal oxide semiconductor field effector |
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| Country | Link |
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| CN (1) | CN100578936C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102883513A (en) * | 2011-07-11 | 2013-01-16 | 奥斯兰姆有限公司 | Electronic ballast protection circuit and electronic ballast |
| CN113359542A (en) * | 2021-05-21 | 2021-09-07 | 深圳拓邦股份有限公司 | Low-power consumption control circuit and electrical apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102684180B (en) * | 2012-05-23 | 2015-07-01 | 乐鑫信息科技（上海）有限公司 | Charge pump output protection drive device for NFC (near field communication) emitting device |
-
2007
- 2007-01-31 CN CN200710063428A patent/CN100578936C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102883513A (en) * | 2011-07-11 | 2013-01-16 | 奥斯兰姆有限公司 | Electronic ballast protection circuit and electronic ballast |
| CN102883513B (en) * | 2011-07-11 | 2016-06-22 | 奥斯兰姆有限公司 | Electronic ballast protecting circuit and electric ballast |
| CN113359542A (en) * | 2021-05-21 | 2021-09-07 | 深圳拓邦股份有限公司 | Low-power consumption control circuit and electrical apparatus |
| CN113359542B (en) * | 2021-05-21 | 2024-02-09 | 深圳拓邦股份有限公司 | Low-power consumption control circuit and electric appliance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100578936C (en) | 2010-01-06 |
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