CN101017857B - Te solar battery composed of non-planar battery chip - Google Patents
Te solar battery composed of non-planar battery chip Download PDFInfo
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- CN101017857B CN101017857B CN 200610021065 CN200610021065A CN101017857B CN 101017857 B CN101017857 B CN 101017857B CN 200610021065 CN200610021065 CN 200610021065 CN 200610021065 A CN200610021065 A CN 200610021065A CN 101017857 B CN101017857 B CN 101017857B
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- battery
- chip
- thin film
- solar
- planar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to the non-plane chip and telluride solar cell in photoelectric technology field. Wherein, it treats the cell substrate into the required non-plane structure, and applies film material contained at least one telluride to prepare the final product. This cell can absorbe and transfer sunlight from different directions furtherest. This invention is low cost fit to spread.
Description
Technical field:
The present invention relates to a kind of Te solar battery that constitutes by the on-plane surface battery chip, belong to the field of photoelectric technology that solar energy directly is converted to electric energy.
Background technology:
Solar energy was both pollution-free, did not charge, and was inexhaustible again, ubiquitous.With directly to be converted to the solar cell of electric energy, now kind is numerous, and is too numerous to mention.But present both at home and abroad this series products, mostly ubiquity the problem of " height, low ", that is: and cost is high, and transfer ratio is low, it is applied receive its limit greatly.Studying carefully its main cause has two: one, and the light reflection loss of battery surface is big, and light is caught poor; The 2nd, the semi-conducting material in the battery thin film is selected not good enough, and the photovoltaic energy conversion rate is not high.To this, Chinese patent CN02155236.3 provides a kind of " surface texture of monocrystaline silicon solar cell and preparation method thereof ", adopt the method for " photoetching; twice corrosion ", make the battery body surface form the structure of " positive pyramid and inverted pyramid combination ", reduced the reflectivity of battery surface with this.Yet, on the silicon materials of costliness, carry out photoetching and corrosion, its technology numerous, the height of cost, unavoidable.
Summary of the invention:
The purpose of this invention is to provide a kind of Te solar battery that constitutes by the on-plane surface battery chip, it can allow sunlight in the overall process that from morning to night different directions is injected from east to west, can both be absorbed the conversion with photoelectric energy to greatest extent, and manufacture craft is simple, production cost is low.
Main technical schemes of the present invention is: earlier the solar cell substrates material surface is processed into required nonplanar structure, and prepare the compound semiconductor materials of selecting a kind of tellurium (Te) in the material of battery thin film at least for use in the above, make it directly to make the Te solar battery of on-plane surface battery chip.Thereby simplification technology reduces cost, and reduces the light reflection, improves transfer ratio.
The alleged solar cell substrates material of the present invention is made a general reference all materials that all can prepare battery thin film in the above, as glass, and pottery, metal, plastics and fibre etc.
The nonplanar structure of indication solar cell substrates of the present invention comprises the surface textures miscellaneous except that planar structure such as hole nest formula, plough groove type, fence type, screen mesh type, raindrop formula.Its concrete shape and camber etc. all both to help the reducing light reflection, are strengthened light and are caught, and are convenient to processing and fabricating again and get final product.
Tellurides as semiconductor material of the present invention refer to that the energy gap width is suitable for photovoltaic energy conversion, and deposition rate is higher, is easy to be deposited as the tellurium (Te) of large area film and the compound semiconductor materials of non-ferrous metal composition.
The present invention compared with prior art, its beneficial effect has three:
The one, reduced the reflection loss of solar cell surface in a large number, improved light and caught, strengthened stability; The 2nd, improved the photovoltaic energy conversion efficient of solar cell, energy consumption is little; The 3rd, simplified the manufacture craft of solar cell, reduced production cost.
Description of drawings:
Fig. 1 is the front view of the embodiment of the invention, and Fig. 2 is the sectional drawing of Fig. 1 embodiment, and Fig. 3 is the light reflectogram on planar structure battery chip surface.
In Fig. 1, the 1st, frame structure; The 2nd, non-planar substrates; The 3rd, chip hole nest; The 4th, the protruding top of nest, hole.In Fig. 2 and Fig. 3, the 2nd, non-planar substrates; The 3rd, chip hole nest; The 4th, the protruding top of nest, hole; The 5th, battery thin film; The 6th, transparent protective film; The 7th, battery back-sheet; The 8th, inject sunlight; The 9th, planar substrates; The 10th, reflection ray.Wherein, battery thin film 5 is attached to the surface of non-planar substrates 2, and transparent protective film 6 is on the 4 place's battery thin films 5 of the protruding top of nest, hole.
Embodiment:
According to the reflection of light law principle of " angle of reflection and incidence angle equate ", after injecting sunlight 8 and passing transparent protective film 6, as shown in Figure 2, the overwhelming majority is absorbed by chip hole nest 3 and changes, and has only the reflection ray 10 of very 4 places, the protruding top of the hole nest generation of small size not to be absorbed; Otherwise as shown in Figure 3, the overwhelming majority is injected sunlight 8, all will and lose at the surface of the battery thin film on the planar substrates 95 formation reflection ray 10, and having only minority to inject sunlight 8 can be absorbed and change.Obviously: nonplanar chip is cheated nest 3, has enlarged the absorbing surface of sunlight effectively, has improved the light capture ability of solar cell.Both reduced the loss of reflection ray 10 in a large number, and can allow again and inject sunlight 8 and in the overall process that from morning to night different directions is injected from east to west, can both be absorbed to greatest extent, and made the solar cell whole day can both stable operation.
Simultaneously, the tellurides as semiconductor material that the present invention is selected is because of its energy gap width is more suitable in photovoltaic energy conversion, be easy to be deposited as large area film, and higher deposition rate is arranged, in order to the solar battery thin film 5 photovoltaic energy conversion rate height of making, energy consumption is little, and cost is low.
Claims (2)
1. Te solar battery that constitutes by the on-plane surface battery chip; form by frame structure (1), non-planar substrates (2), battery thin film (5), transparent protective film (6) and battery back-sheet (7); it is characterized in that: described battery thin film (5) constitutes the on-plane surface battery chip attached to the surface of non-planar substrates (2), and has selected the compound semiconductor materials of a kind of tellurium (Te) in the manufacturing materials of battery thin film (5) at least for use.
2. a kind of Te solar battery that is made of the on-plane surface battery chip as claimed in claim 1 is characterized in that: the surface of described non-planar substrates (2) is a nonplanar structure, and its shape comprises hole nest formula, plough groove type, fence type, raindrop formula.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610021065 CN101017857B (en) | 2006-05-31 | 2006-05-31 | Te solar battery composed of non-planar battery chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610021065 CN101017857B (en) | 2006-05-31 | 2006-05-31 | Te solar battery composed of non-planar battery chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101017857A CN101017857A (en) | 2007-08-15 |
| CN101017857B true CN101017857B (en) | 2010-04-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610021065 Expired - Fee Related CN101017857B (en) | 2006-05-31 | 2006-05-31 | Te solar battery composed of non-planar battery chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN101017857B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576790A (en) * | 2015-01-04 | 2015-04-29 | 雷加良 | Thin-film solar cell of relief structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120246A (en) * | 1995-07-20 | 1996-04-10 | 四川联合大学 | Cadmium telluride solar cell with transition layer |
| US5868869A (en) * | 1995-06-07 | 1999-02-09 | Photon Energy, Inc. | Thin film photovoltaic device and process of manufacture |
| CN1454395A (en) * | 2000-10-06 | 2003-11-05 | 信越半导体株式会社 | Solar cell and method of manufacture thereof |
| CN1507075A (en) * | 2002-12-10 | 2004-06-23 | 北京力诺桑普光伏高科技有限公司 | Surface structure of monocrystalline silicon solar cell and its making process |
| CN2686096Y (en) * | 2004-03-26 | 2005-03-16 | 杭州福斯特热熔胶膜有限公司 | Solar energy battery coating |
-
2006
- 2006-05-31 CN CN 200610021065 patent/CN101017857B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5868869A (en) * | 1995-06-07 | 1999-02-09 | Photon Energy, Inc. | Thin film photovoltaic device and process of manufacture |
| CN1120246A (en) * | 1995-07-20 | 1996-04-10 | 四川联合大学 | Cadmium telluride solar cell with transition layer |
| CN1454395A (en) * | 2000-10-06 | 2003-11-05 | 信越半导体株式会社 | Solar cell and method of manufacture thereof |
| CN1507075A (en) * | 2002-12-10 | 2004-06-23 | 北京力诺桑普光伏高科技有限公司 | Surface structure of monocrystalline silicon solar cell and its making process |
| CN2686096Y (en) * | 2004-03-26 | 2005-03-16 | 杭州福斯特热熔胶膜有限公司 | Solar energy battery coating |
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| Publication number | Publication date |
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| CN101017857A (en) | 2007-08-15 |
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Effective date of registration: 20100122 Address after: Chongzhou City, Chongyang province Sichuan Wenjin Street Town No. 118 post encoding: 611230 Applicant after: Chengdu With Better Good Technology Co., Ltd. Address before: Room 3, unit 2, Jinfeng apartment, 406 East Street, Chongyang Town, Sichuan City, Chongzhou Province, China: 611230 Applicant before: Lei Jialiang |
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